CN107648979A - The method and system of tail gas in a kind of processing production of polysilicon - Google Patents
The method and system of tail gas in a kind of processing production of polysilicon Download PDFInfo
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- CN107648979A CN107648979A CN201610592188.2A CN201610592188A CN107648979A CN 107648979 A CN107648979 A CN 107648979A CN 201610592188 A CN201610592188 A CN 201610592188A CN 107648979 A CN107648979 A CN 107648979A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/02—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by adsorption, e.g. preparative gas chromatography
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
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Abstract
The invention discloses a kind of method and system for handling tail gas in production of polysilicon, this method comprises the following steps：Tail gas in production of polysilicon is adsorbed, dichlorosilane, trichlorosilane in absorption production of polysilicon in tail gas, hydrogen chloride, obtains tail gas in the production of polysilicon after absorption；Adsorbed material is desorbed, obtains tail gas in the production of polysilicon of desorption out, tail gas includes dichlorosilane, trichlorosilane and hydrogen chloride in the production of polysilicon for being desorbed out；Using the silicon tetrachloride containing liquid elution liquid condensing and elute desorption out production of polysilicon in tail gas, tail gas in scrubbed leacheate and scrubbed production of polysilicon is obtained, scrubbed leacheate includes silicon tetrachloride, dichlorosilane, trichlorosilane and hydrogen chloride.The defects of solving effective recovery that existing cryogenic condensation technology can not realize chlorosilane in tail gas, while continuing to reduce condensation temperature increase cooling medium consumption and equipment investment problem.
Description
Technical field
The invention belongs to technical field of polysilicon production, and in particular to it is a kind of handle production of polysilicon in tail gas method and
System.
Background technology
With the continuous lifting of China's environmental policy in recent years, domestic polysilicon enterprise is real by continuing to develop and improving
The recycling and harmless treatment of most tail gas in polysilicon production process, waste liquid and solid slag are showed.But with
Continuous improvement of the market to impurity concentration requirement in polysilicon, for constantly lifting polysilicon product quality, polysilicon production process
In certainly will caused by a large amount of acid tail gas.In order to handle this partial tail gas, most enterprises still take the mode that alkali lye elutes
Handled, this method had both consumed a large amount of alkali lye, added silicon consumption, chlorine consumption and alkaline consumption in polysilicon production process again.OK
Ye Zhongyeyou enterprises handle tail gas and waste liquid in production of polysilicon by the way of burning, but the flow that this mode is handled is answered
It is miscellaneous, the chlorosilane in tail gas, waste liquid can not be subjected to recycling, accessory substance belongs to production capacity surplus product in indivedual areas,
The increase of the performance of enterprises can not be realized.
Caused tail gas mainly contains N in polysilicon production process2、H2、SiH2Cl2、SiHCl3, HCl etc., wherein big portion absolutely
It is divided into N2、H2On-condensible gas, accounting is 80% or so, and remainder is the chlorosilane sour gas that material system is released, composition
In mainly contain SiH2Cl2、SiHCl3、HCl.Due to SiH2Cl2、SiHCl3Volatility it is of a relatively high, be easily condensed into liquid phase, can
So that caused tail gas in polysilicon production process is condensed and eluted at low temperature using the silicon tetrachloride of liquid, tail is removed
Impurity in gas simultaneously absorbs the hydrogen chloride and chlorosilane of part.But because the accounting of the fixed gas in tail gas is higher, gas phase chlorine
The condensation effect of silane is poor.In addition, the accounting of gas phase chlorosilane is relatively low in tail gas after elution, and it is not easy to be condensed,
So that the pressure that the alkali lye elution device of subsequent technique carries out alkali lye elution processing is still larger, the alkali lye elution dress of subsequent technique
The alkali lye consumption amount put is still high.
The content of the invention
The technical problems to be solved by the invention are for above shortcomings in the prior art, there is provided one kind processing is more
The method and system of tail gas in crystal silicon production, the effective of chlorosilane in tail gas can not be realized by solving existing cryogenic condensation technology
Recovery, while continue to reduce the defects of condensation temperature increases cooling medium consumption and equipment investment problem.
Technical scheme is to provide a kind of side for handling tail gas in production of polysilicon used by solving present invention problem
Method, tail gas includes nitrogen, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride in the production of polysilicon, and methods described includes
Following steps：
Tail gas in production of polysilicon is adsorbed, dichlorosilane, trichlorine hydrogen in absorption production of polysilicon in tail gas
Silicon, hydrogen chloride, obtain tail gas in the production of polysilicon after absorption, tail gas bag in the production of polysilicon after absorption
Include nitrogen and hydrogen；
Adsorbed material is desorbed, obtains tail gas in the production of polysilicon of desorption out, what the desorption came out
Tail gas includes dichlorosilane, trichlorosilane and hydrogen chloride in production of polysilicon；
Using the silicon tetrachloride containing liquid elution liquid condensing and elute it is described desorption out production of polysilicon in tail
Gas, obtains tail gas in scrubbed leacheate and scrubbed production of polysilicon, and the scrubbed leacheate includes
Silicon tetrachloride, dichlorosilane, trichlorosilane and hydrogen chloride.
By handling in production of polysilicon after the method for tail gas, tail gas key component in the production of polysilicon after absorption
For nitrogen and hydrogen, can be directly vented after the alkali lye elution of subsequent technique；Tail gas in production of polysilicon after scrubbed
Key component is nitrogen and hydrogen, and wherein chlorosilane accounting is 1~5wt%, can be direct after the alkali lye elution of subsequent technique
Emptying, scrubbed leacheate are put into recycling after entering the rectifier unit separation of subsequent technique.
Preferably, the adsorption step can also adsorb in production of polysilicon the impurity containing boron, phosphorus in tail gas.
Preferably, the adsorption step is adsorbed using adsorbent, and the adsorbent is modified activated carbon.
Preferably, the temperature of the adsorption step is 0~70 DEG C.
Preferably, the temperature of the desorption is 100~180 DEG C.
Preferably, the temperature of the rinsing step is -40~0 DEG C.Due to after adsorption/desorption so that desorption comes out
Production of polysilicon in the content of fixed gas in tail gas substantially reduce, can so greatly improve condensation point so that be desorbed out
Tail gas is easier to make for condensing in the production of polysilicon come.The method of the present invention can be carried out under relatively high condensation temperature
Elution absorbs the chlorosilane and hydrogen chloride in tail gas in the production of polysilicon for being desorbed out, and realize has to chlorosilane in tail gas
Effect recovery, reduce cooling medium consumption and equipment investment.
Preferably, described the step of being desorbed adsorbed material, is specially：Using obtaining after absorption
Production of polysilicon in tail gas adsorbed material is desorbed.
Preferably, in described processing production of polysilicon tail gas method, it is further comprising the steps of：
Tail gas in production of polysilicon before adsorbing is carried out being pressurized to 0.1~0.5Mpa.
The present invention also provides a kind of system for handling tail gas in production of polysilicon, and tail gas includes nitrogen in the production of polysilicon
Gas, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride, the system include：
Adsorbent equipment, the adsorbent equipment are used to adsorb tail gas in production of polysilicon, adsorb tail in production of polysilicon
Dichlorosilane, trichlorosilane in gas, hydrogen chloride, tail gas in the production of polysilicon after absorption is obtained, it is described by inhaling
Tail gas includes nitrogen and hydrogen in attached production of polysilicon；The adsorbent equipment is additionally operable to be taken off adsorbed material
It is attached, tail gas in the production of polysilicon of desorption out is obtained, tail gas includes dichloro-dihydro in the production of polysilicon of the desorption out
Silicon, trichlorosilane and hydrogen chloride；
Elution device, it is connected with the adsorbent equipment, the elution device is used for using the silicon tetrachloride containing liquid
Elution liquid condensing simultaneously elutes tail gas in the production of polysilicon of the desorption out, obtains scrubbed leacheate and scrubbed
Production of polysilicon in tail gas, the scrubbed leacheate includes silicon tetrachloride, dichlorosilane, trichlorosilane and chlorination
Hydrogen.
By handling in production of polysilicon after the system of tail gas, tail gas key component in the production of polysilicon after absorption
For nitrogen and hydrogen, can be directly vented after the alkali lye elution in the alkali lye elution device of subsequent technique；After scrubbed
Tail gas key component is nitrogen and hydrogen in production of polysilicon, and wherein chlorosilane accounting is 1~5wt%, by subsequent technique
Can directly it be vented after the elution of alkali lye elution device alkali lye, after scrubbed leacheate enters the rectifier unit separation of subsequent technique
Put into recycling.
Preferably, the adsorbent equipment include the first adsorbing mechanism, the second adsorbing mechanism, first adsorbing mechanism with
Second adsorbing mechanism alternately carries out adsorption and desorption to tail gas in production of polysilicon, obtains the polycrystalline after absorption
Tail gas in tail gas, the production of polysilicon of the desorption out in silicon production.
Preferably, first adsorbing mechanism is connected with second adsorbing mechanism, when first adsorbing mechanism pair
When tail gas is adsorbed in production of polysilicon, it can be used all or part obtained after first adsorbing mechanism absorption more
Tail gas is desorbed to second adsorbing mechanism in crystal silicon production；
When tail gas adsorbs during second adsorbing mechanism is to production of polysilicon, can be used by the described second absorption
Tail gas is desorbed to first adsorbing mechanism in all or part of production of polysilicon obtained after mechanism absorption.
Preferably, the adsorbent equipment includes the first adsorbing mechanism, the second adsorbing mechanism,
First adsorbing mechanism includes being arranged at the first entrance of described first adsorbing mechanism one end and first outlet, set
The other end of second outlet of the first adsorbing mechanism is placed in, the first outlet is connected with the elution device；
Second adsorbing mechanism includes being arranged at the second entrance of described second adsorbing mechanism one end and the 3rd outlet, set
Other end of 4th outlet of second adsorbing mechanism is placed in, the 3rd outlet is connected with the elution device；
Wherein, the second outlet connects with the described 4th outlet,
When first adsorbing mechanism is used to adsorb dichlorosilane in production of polysilicon in tail gas, trichlorosilane, chlorine
When changing hydrogen, tail gas enters first adsorbing mechanism by the first entrance in production of polysilicon, after absorption, obtained warp
Tail gas is discharged by the second outlet in the production of polysilicon crossed after absorption, can be by polysilicon of all or part after absorption
Tail gas is redirected back into second adsorbing mechanism by the described 4th outlet in production, the material that second adsorbing mechanism is adsorbed
Reversely it is desorbed, tail gas is discharged by the described 3rd outlet in the production of polysilicon for being desorbed out, enters the elution device；
When second adsorbing mechanism is used to adsorb dichlorosilane in production of polysilicon in tail gas, trichlorosilane, chlorine
When changing hydrogen, tail gas enters second adsorbing mechanism by the second entrance in production of polysilicon, after absorption, obtained warp
Tail gas in the production of polysilicon after absorption is crossed to be discharged by the described 4th outlet, can be by polysilicon of all or part after absorption
Tail gas is redirected back into first adsorbing mechanism by the second outlet in production, the material that first adsorbing mechanism is adsorbed
Reversely it is desorbed, tail gas is discharged by the first outlet in the production of polysilicon for being desorbed out, enters the elution device.
Preferably, first adsorbing mechanism is 3~6 adsorption columns, and second adsorbing mechanism is 3~6 absorption
Post.
Preferably, the system of tail gas also includes heat exchanger in described processing production of polysilicon, and the heat exchanger is used for
The adsorbent equipment is exchanged heat.
Preferably, the heat exchanger is arranged in the adsorbent equipment, and the heat exchanger includes being used to be passed through thermal conducting agent
And the heat exchanger tube to be exchanged heat with the adsorbent equipment, the heat exchanger also include being arranged on the heat exchanger tube changing for increase
The fin of hot area.
Preferably, the system of tail gas also includes supercharging device, the supercharging device in described processing production of polysilicon
It is connected with the adsorbent equipment, the supercharging device is used for being carried out into tail gas in the production of polysilicon before the adsorbent equipment
Supercharging.
The method and system of tail gas in processing production of polysilicon in the present invention, by being carried out to tail gas in production of polysilicon
Absorption, obtain tail gas in the production of polysilicon after absorption, the tail gas enter subsequent technique alkali lye elution after can be direct
Emptying；Again by the way that the material of absorption is desorbed, the tail gas in the production of polysilicon of desorption out is obtained, the master in the tail gas
It is dichlorosilane, trichlorosilane and hydrogen chloride to want component, and the content of fixed gas therein is very low, so that what desorption came out
Tail gas in production of polysilicon is good using the effect of silicon tetrachloride condensation elution, the dichlorosilane of wherein most, trichlorine hydrogen
Silicon and hydrogen chloride are leached, and can be reclaimed into follow-up rectification working process, obtained scrubbed production of polysilicon
Middle tail gas can be directly vented after entering the alkali lye elution of subsequent technique, the chlorine silicon in scrubbed production of polysilicon in tail gas
The content of alkane and hydrogen chloride is very low, so being dropped significantly in the alkali lye consumption amount carried out used in the alkali lye elution of subsequent technique
It is low.
Effective recovery of chlorosilane in tail gas can not be realized for existing cryogenic condensation technology, while continues to reduce condensation
Temperature increases the defects of cooling medium consumption and equipment investment problem.The method of tail gas in processing production of polysilicon in the present invention
And system, when can may be implemented in the identical chlorosilane rate of recovery in this way, elution low temperature silicon tetrachloride cooling medium disappears
Consumption declines 30~50%, continues technique after entering by tail gas in the scrubbed production of polysilicon that is obtained after elution device
The processing of alkali lye elution device when so that alkali lye consumption amount declines 30~50%, can be achieved at production of polysilicon tail gas hazard-free
Reason.
Therefore, the present invention in processing production of polysilicon in tail gas method and system, realize polysilicon production process
Effective processing of middle tail gas, the decline of production of polysilicon cost is realized, the harmless discharge of system tail gas, realizes production of polysilicon
Transformation of the enterprise to innoxious, environmentally friendly chemical enterprise.
Brief description of the drawings
Fig. 1 is the structural representation of the system of tail gas in the processing production of polysilicon in the embodiment of the present invention 2；
Fig. 2 is the structural representation of the adsorbent equipment and heat exchanger in the embodiment of the present invention 2.
In figure：1- tail gas buffers；2- supercharging devices；The adsorbing mechanisms of 3- first；31- first entrances；32- first outlets；
33- second outlets；The adsorbing mechanisms of 4- second；41- second entrances；42- the 3rd is exported；43- the 4th is exported；5- elution devices；51-
Eluting column；511- eluting column top exits；512- eluting column outlet at bottoms；52- cooling bodies；53- reflux pumps；6- heat exchanger tubes；
7- fins；8- support members；The valves of 9- first；The valves of 10- second；The valves of 11- the 3rd；The valves of 12- the 4th；The valves of 13- the 6th；
The valves of 14- the 5th；The heat exchanger tubes of 15- first；The valves of 16- the 7th；The valves of 17- the 8th；The valves of 18- the 9th；The valves of 19- the tenth；20-
Second heat exchanger tube；The valves of 21- the 11st；The valves of 22- the 12nd；The valves of 23- the 13rd；The valves of 24- the 14th；25- absorption dresses
Put.
Embodiment
To make those skilled in the art more fully understand technical scheme, below in conjunction with the accompanying drawings and specific embodiment party
Formula is described in further detail to the present invention.
Embodiment 1
The present embodiment provides a kind of system for handling tail gas in production of polysilicon, in production of polysilicon tail gas include nitrogen,
Hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride, system include：
Adsorbent equipment, the adsorbent equipment are used to adsorb tail gas in production of polysilicon, adsorb tail in production of polysilicon
Dichlorosilane, trichlorosilane in gas, hydrogen chloride, tail gas in the production of polysilicon after absorption is obtained, after absorption
Production of polysilicon in tail gas include nitrogen and hydrogen；Adsorbent equipment is additionally operable to adsorbed material being desorbed, and is taken off
Tail gas in attached production of polysilicon out, in the production of polysilicon for being desorbed out tail gas include dichlorosilane, trichlorosilane and
Hydrogen chloride；
Elution device, it is connected with adsorbent equipment, elution device is used for cold using the leacheate of the silicon tetrachloride containing liquid
Tail gas in the production of polysilicon that coalescence elution is desorbed out, obtains scrubbed leacheate and scrubbed polysilicon
Tail gas in production, scrubbed leacheate include silicon tetrachloride, dichlorosilane, trichlorosilane and hydrogen chloride.
The present embodiment provides tail in a kind of system processing production of polysilicon using tail gas in above-mentioned processing production of polysilicon
The method of gas, tail gas includes nitrogen, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride in production of polysilicon, method include with
Lower step：
1) tail gas in production of polysilicon is adsorbed, adsorbs dichlorosilane, trichlorine in production of polysilicon in tail gas
Hydrogen silicon, hydrogen chloride, tail gas in the production of polysilicon after absorption is obtained, tail gas includes in the production of polysilicon after absorption
Nitrogen and hydrogen；
2) adsorbed material is desorbed, obtains tail gas in the production of polysilicon of desorption out, be desorbed out is more
Tail gas includes dichlorosilane, trichlorosilane and hydrogen chloride in crystal silicon production；
3) tail gas in the production of polysilicon for being desorbed out is eluted using the leacheate of the silicon tetrachloride containing liquid, obtained
The tail gas into scrubbed leacheate and scrubbed production of polysilicon, scrubbed leacheate include silicon tetrachloride,
Dichlorosilane, trichlorosilane and hydrogen chloride.
By handling in production of polysilicon after the method and system of tail gas, tail gas master in the production of polysilicon after absorption
It is nitrogen and hydrogen to want component, can be directly vented after the alkali lye elution of subsequent technique；Production of polysilicon after scrubbed
Middle tail gas key component is nitrogen and hydrogen, and wherein chlorosilane accounting is 1~5wt%, and dress is eluted by the alkali lye of subsequent technique
Can directly it be vented after putting alkali lye elution, scrubbed leacheate puts into profit again after entering the rectifier unit separation of subsequent technique
In.
The method and system of tail gas in processing production of polysilicon in the present embodiment, by entering to tail gas in production of polysilicon
Row absorption, obtains tail gas in the production of polysilicon after absorption, and the tail gas can be direct after entering follow-up alkali lye treatment process
Emptying；Again by the way that the material of absorption is desorbed, the tail gas in the production of polysilicon of desorption out is obtained, the master in the tail gas
It is dichlorosilane, trichlorosilane and hydrogen chloride to want component, and the content of fixed gas therein is very low, so that what desorption came out
Tail gas in production of polysilicon is good using the effect of silicon tetrachloride condensation elution, the dichlorosilane of wherein most, trichlorine hydrogen
Silicon and hydrogen chloride are leached, and can be reclaimed into follow-up rectification working process, obtained scrubbed production of polysilicon
Middle tail gas can be directly vented after entering follow-up alkali lye treatment process, the chlorosilane in scrubbed production of polysilicon in tail gas
It is very low with the content of hydrogen chloride, so being substantially reduced in the alkali lye consumption amount carried out used in follow-up alkali lye treatment process.
Effective recovery of chlorosilane in tail gas can not be realized for existing cryogenic condensation technology, while continues to reduce condensation
Temperature increases the defects of cooling medium consumption and equipment investment problem.The side of tail gas in processing production of polysilicon in the present embodiment
When method and system can may be implemented in the identical chlorosilane rate of recovery in this way, elution low temperature silicon tetrachloride cooling medium
Consumption declines 30~50%, continues work after entering by tail gas in the scrubbed production of polysilicon that is obtained after elution device
During the alkali lye elution device processing of skill so that alkali lye consumption amount declines 30~50%, and production of polysilicon tail gas hazard-free can be achieved
Processing.
Therefore, in the processing production of polysilicon in the present embodiment tail gas method and system, realize production of polysilicon mistake
Effective processing of tail gas in journey, the decline of production of polysilicon cost is realized, the harmless discharge of system tail gas, realizes that polysilicon is given birth to
Produce transformation of the enterprise to innoxious, environmentally friendly chemical enterprise.
Embodiment 2
As shown in figure 1, the present embodiment provides a kind of system for handling tail gas in production of polysilicon, tail gas in production of polysilicon
Including nitrogen, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride, system includes：
Tail gas buffer 1, for storing tail gas in production of polysilicon；Existing production of polysilicon enterprise is by production system
Tail gas containing a large amount of hydrogen and chlorosilane is reclaimed, and the tail gas of discharge mainly contains a large amount of nitrogen, a small amount of hydrogen, dichloro
Dihydro silicon, trichlorosilane and hydrogen chloride, by process pipelines by the unified collection of this partial tail gas in tail gas buffer 1.
Supercharging device 2, the supercharging device 2 are connected with tail gas buffer 1, before supercharging device 2 is used for entering adsorbent equipment
Production of polysilicon in tail gas be pressurized；Tail gas is delivered to adsorbent equipment after the supercharging of supercharging device 2.Specifically, this implementation
Supercharging device 2 in example is booster pump.
Adsorbent equipment, adsorbent equipment are connected with supercharging device 2, and the adsorbent equipment is used to carry out tail gas in production of polysilicon
Adsorb, dichlorosilane, trichlorosilane in absorption production of polysilicon in tail gas, hydrogen chloride, obtain the polycrystalline after absorption
Tail gas in silicon production, tail gas includes nitrogen and hydrogen in the production of polysilicon after absorption；Adsorbent equipment is additionally operable to be inhaled
Attached material is desorbed, and obtains tail gas in the production of polysilicon of desorption out, tail gas bag in the production of polysilicon for being desorbed out
Include dichlorosilane, trichlorosilane and hydrogen chloride；The adsorbent equipment being desorbed is cooled down, completed for adsorbent equipment again
It is raw.
It should be noted that the adsorbent equipment in the present embodiment includes the first adsorbing mechanism 3, the second adsorbing mechanism 4,
First adsorbing mechanism 3 includes being arranged at the first entrance 31 of the one end of the first adsorbing mechanism 3 and first outlet 32, set
In 3 other end of second outlet 33 of the first adsorbing mechanism, first outlet 32 is connected with elution device 5；Specifically, in the present embodiment
First entrance 31 and first outlet 32 be arranged at the bottom of the first adsorbing mechanism 3, second outlet 33 is arranged at the first adsorption machine
The top of structure 3.
Second adsorbing mechanism 4 includes being arranged at the outlet of second entrance 41 and the 3rd 42 of the one end of the second adsorbing mechanism 4, set
In 4 other end of 4th outlet 43 of the second adsorbing mechanism, the 3rd outlet 42 is connected with elution device 5；Specifically, the present embodiment
In the bottoms that are arranged at the second adsorbing mechanism 4 of the outlet of second entrance 41 and the 3rd 42, the 4th outlet 43 is arranged at the first absorption
The top of mechanism 3.
Wherein, second outlet 33 is connected with the 4th outlet 43,
When the first adsorbing mechanism 3 is used to adsorb dichlorosilane in production of polysilicon in tail gas, trichlorosilane, hydrogen chloride
When, tail gas enters the first adsorbing mechanism 3 by first entrance 31 in production of polysilicon, after absorption, obtain after absorption
Production of polysilicon in tail gas discharged by second outlet 33, can be by tail gas in production of polysilicon of all or part after absorption
Second adsorbing mechanism 4 is redirected back into by the 4th outlet 43, the material that the second adsorbing mechanism 4 adsorbs reversely is desorbed, is desorbed
Tail gas enters elution device 5 by the discharge of the 3rd outlet 42 in production of polysilicon out；Specifically, part in the present embodiment
Tail gas is redirected back into the second adsorbing mechanism 4 by the 4th outlet 43 in production of polysilicon after absorption, and remaining is by absorption
Tail gas directly excludes to carry out the alkali lye elution device progress alkali lye elution processing of subsequent technique in production of polysilicon afterwards, after elution
The main component of obtained tail gas is hydrogen and nitrogen, is directly vented.
When the second adsorbing mechanism 4 is used to adsorb dichlorosilane in production of polysilicon in tail gas, trichlorosilane, hydrogen chloride
When, tail gas enters the second adsorbing mechanism 4 by second entrance 41 in production of polysilicon, after absorption, obtain after absorption
Production of polysilicon in tail gas by the 4th outlet 43 discharge, can be by tail gas in production of polysilicon of all or part after absorption
First adsorbing mechanism 3 is redirected back into by second outlet 33, the material that the first adsorbing mechanism 3 adsorbs reversely is desorbed, is desorbed
Tail gas is discharged by first outlet 32 in production of polysilicon out, enters elution device 5.Specifically, part in the present embodiment
Tail gas is redirected back into the first adsorbing mechanism 3 by second outlet 33 in production of polysilicon after absorption, and remaining is by absorption
Tail gas directly excludes to carry out the alkali lye elution device progress alkali lye elution processing of subsequent technique in production of polysilicon afterwards, after elution
The main component of obtained tail gas is hydrogen and nitrogen, is directly vented.
Elution device 5, is connected with adsorbent equipment, and elution device 5 is used for the leacheate using the silicon tetrachloride containing liquid
Tail gas in the production of polysilicon for being desorbed out is condensed and eluted, obtains scrubbed leacheate and scrubbed polycrystalline
Tail gas in silicon production, scrubbed leacheate include silicon tetrachloride, dichlorosilane, trichlorosilane and hydrogen chloride.Specifically
Elution device 5 in the present embodiment includes eluting column 51, cooling body 52, reflux pump 53, and eluting column 51 is connected with adsorbent equipment,
Eluting column 51 is used to elute the tail gas that adsorbent equipment is desorbed out, and cooling body 52 is connected with eluting column 51, cooler
Structure 52 is used to condense the leacheate in eluting column 51.Eluting column 51 includes being used to discharge scrubbed production of polysilicon
The eluting column top exit 511 of middle tail gas and the eluting column outlet at bottom 512 for discharging leacheate, reflux pump 53 respectively with leaching
Wash tower bottom outlet 512 to connect with the entrance of cooling body 52, reflux pump 53 is used for the leaching that will be flowed out from eluting column outlet at bottom 512
Washing lotion is pumped into cooling body 52, and leacheate is after the cooling of cooling body 52, then is back in eluting column 51.
By handling in production of polysilicon after the method for tail gas, tail gas key component in the production of polysilicon after absorption
For nitrogen and hydrogen, tail gas key component is nitrogen and hydrogen in scrubbed production of polysilicon.
In chlorosilane, hydrogen chloride and chlorosilane in adsorbent equipment in the present embodiment in addition adsorbent absorption tail gas
Part phosphorus, boron impurity, adsorbent are modified activated carbon.Chlorine-containing silane or do not contain in tail gas in production of polysilicon after absorption
There is a small amount of chlorosilane, tail gas is directly entered the alkali lye elution device progress alkali of subsequent technique in the production of polysilicon after absorption
Liquid elution is handled, and the main component of the tail gas obtained after elution is hydrogen and nitrogen, is directly vented.
Tail gas in a small amount of production of polysilicon after absorption can be used to carry out anti-the adsorbent equipment after absorption
Blow, adsorbed material can be desorbed, obtain tail gas in the production of polysilicon of desorption out and contain a small amount of fixed gas
The tail gas of (nitrogen and hydrogen) and a large amount of chlorosilanes, enters back into elution device 5 and is condensed and eluted recovery chlorosilane.Due to
The constituent content of fixed gas in the tail gas being leached is relatively low, can almost ignore, so being passed into the cold of elution device 5
Solidifying elution efficiency is high, and the tail gas being almost largely leached is condensed and eluted, in obtained scrubbed production of polysilicon
Chlorosilane content in tail gas is relatively low, it is scrubbed after production of polysilicon in tail gas be directly entered the alkali lye of subsequent technique
Elution device carries out alkali lye elution processing, can effectively reduce alkali lye consumption and chlorosilane loss amount.
Preferably, the first adsorbing mechanism 3 is 3~6 adsorption columns, and the second adsorbing mechanism 4 is 3~6 adsorption columns, operation
Period has and only an adsorption column is adsorbed, and other adsorption columns are regenerated or activate or stand by.First inhales
A how many adsorption column are needed to be operated in the adsorbing mechanism 4 of random structure 3 and second, can be according to the regeneration or activation of adsorption column
Cycle length carries out setting combination.Preferably, combinations thereof can ensure that whole system is continuously worked.Wherein, adsorb
Need to be activated before adsorbent first time use in post, adsorbent in adsorption column is used before once arriving and reusing afterwards
Process needs to be regenerated.
It should be noted that the system of tail gas also includes heat exchanger in processing production of polysilicon in the present embodiment, exchange heat
Device is used to exchange heat to adsorbent equipment.Specifically, as shown in Fig. 2 heat exchanger is arranged in adsorbent equipment 25, heat exchanger includes
For the heat exchanger tube 6 for being passed through thermal conducting agent and being exchanged heat with adsorbent equipment 25, heat exchanger also includes being arranged on heat exchanger tube 6 being used for
Increase the fin 7 of heat exchange area.Fin 7 can be exchanged heat in adsorbent equipment 25 with the adsorbent in adsorbent equipment 25, be carried
High heat exchange efficiency.Adsorbent equipment 25 in the present embodiment is adsorption column, and heat exchanger tube 6 is shaped as U-typed, U-typed heat exchanger tube 6
Bottom is set close to the bottom of adsorption column, the top of U-typed heat exchanger tube 6 in the top of adsorption column, the cylinder of an adsorption column
4-8 heat exchanger tube 6 is equipped with, to ensure stabilization of the heat exchanger tube 6 in adsorption column, 3-5 support member 8 is provided with each adsorption column
Fixed heat exchanger tube 6.
Specifically, the thermal conducting agent in the present embodiment is water, tail gas adsorbs in adsorbent equipment 25 is to production of polysilicon
When, 0~70 DEG C of water at low temperature is passed through in heat exchanger, the material of absorption is cooled, adsorbent equipment 25 is removed in time and adsorbed
The heat discharged in journey, improve adsorption efficiency；When tail gas is desorbed during adsorbent equipment 25 is to production of polysilicon, heat exchanger
100~180 DEG C of high-temperature water is inside passed through, is advantageous to the progress of desorption, is advantageous to accelerate the regeneration or activation of adsorbent equipment 25.
Specifically, the first adsorbing mechanism 3 in the present embodiment is an adsorption column, the second adsorbing mechanism 4 is an absorption
Post.
Specifically, it is provided with the first valve on pipeline between the first entrance 31 of the adsorbing mechanism 3 of supercharging device 2 and first
9, the 3rd valve 11, the first adsorption machine are provided with the pipeline between the first outlet 32 and elution device 5 of the first adsorbing mechanism 3
The second valve 10 is provided with pipeline between the second outlet 33 and discharge duct of structure 3.
It is provided with the 4th valve 12 on pipeline between the second entrance 41 of the adsorbing mechanism 4 of supercharging device 2 and second, second
The 6th valve 13 is provided with pipeline between 3rd outlet 42 of adsorbing mechanism 4 and elution device 5, the second adsorbing mechanism 4
The 5th valve 14 is provided with pipeline between 4th outlet 43 and discharge duct, and between the second valve 10 and discharge duct
Pipeline binding between pipeline and the 5th valve 14 and discharge duct simultaneously connects.
Heat exchanger includes being arranged at First Heat Exchanger in the first adsorbing mechanism 3, the be arranged in the second adsorbing mechanism 4
Two heat exchangers.
It is provided with First Heat Exchanger in first adsorbing mechanism 3, First Heat Exchanger includes the first heat exchanger tube 15 and is arranged at the
The first fin (being not drawn on figure) on one heat exchanger tube 15, the first heat exchanger tube 15 include being used to be passed through hot water to the first heat exchanger tube 15
The first hot water tube inlet, for from the first heat exchanger tube 15 release hot water the first hot-water line outlet, in the first hot water tube inlet
Place is provided with the 7th valve 16, the 9th valve 18 is provided with the first hot-water line exit, and First Heat Exchanger also includes being used to lead to
Enter the first cold water tube inlet of cold water, exported for releasing the first cold water pipe of cold water, is provided with the first cold water pipe porch
8th valve 17, the first cold water pipe exit are provided with the tenth valve 19.
It is provided with the second heat exchanger in second adsorbing mechanism 4, the second heat exchanger includes the second heat exchanger tube 20 and is arranged at the
The second fin (being not drawn on figure) on two heat exchanger tubes 20, the second heat exchanger tube 20 include being used to be passed through hot water to the second heat exchanger tube 20
The second hot water tube inlet, for from the second heat exchanger tube 20 release hot water the second hot-water line outlet, in the second hot water tube inlet
Place is provided with the 11st valve 21, the 13rd valve 23 is provided with the second hot-water line exit, and the second heat exchanger also includes using
In being passed through the second cold water tube inlet of cold water, being exported for releasing the second cold water pipe of cold water, set in the second cold water pipe porch
The 12nd valve 22 is equipped with, the second cold water pipe exit is provided with the 14th valve 24.
When the first adsorbing mechanism 3 is in adsorbed state, the second adsorbing mechanism 4 is in detachment status.By in production of polysilicon
Tail gas is passed into the first adsorbing mechanism 3 after carrying out booster compression by supercharging device 2, opens the first valve 9, closes the 4th valve
Door 12, tail gas switches to the first adsorbing mechanism 3 from the second adsorbing mechanism 4, due to the first adsorbing mechanism 3 completed desorption, most
Regenerative process is completed eventually, and the 3rd valve 11 is closed mode.After tail gas enters the first adsorbing mechanism 3 in production of polysilicon, the
Two valves 10, the 5th valve 14, the 6th valve 13 are synchronous to be opened, and tail gas is through the second valve in the production of polysilicon after absorption
10, which flow to discharge duct, leaves the first adsorbing mechanism 3, and the alkali lye elution device for being partly into subsequent technique carries out alkali lye elution
Processing, another part after the 5th valve 14 by being reversely blown into the second adsorbing mechanism 4.The of synchronous second hot-water line porch
11 valves 21, the 13rd valve 23 in the second hot-water line exit are opened, and are desorbed to the second adsorbing mechanism 4 and are provided heat, the
The material of two adsorbing mechanisms 4 absorption is in the production of polysilicon after absorption from the second adsorption machine in the presence of tail gas and heat
It is desorbed on structure 4, the tail gas containing a large amount of chlorosilanes enters elution device 5 through the 6th valve 13 after desorption, in elution device 5
The elution liquid condensing of silicon tetrachloride of the interior use containing liquid simultaneously elutes the tail gas of desorption out, and the elution for carrying out chlorosilane is returned
Receive.After the second adsorbing mechanism 4 is desorbed certain time, the 6th valve 13 and the 5th valve 14 are closed, stopping will pass through first and inhale
Tail gas is passed into the second adsorbing mechanism 4 in production of polysilicon after the absorption of random structure 3, while will synchronous second hot water tube inlet
11st valve 21, the 13rd valve 23 in the second hot-water line exit at place are closed.The second cold water pipe porch is opened again to set
The 12nd valve 22, the 14th valve 24 of the second cold water pipe exit setting put, cool to the second adsorbing mechanism 4,
After the temperature of the second adsorbing mechanism 4 drops to a certain degree, the second adsorbing mechanism 4 reaches stand-by state, and the first adsorbing mechanism 3 enters
Detachment status.
When the second adsorbing mechanism 4 is in adsorbed state, the first adsorbing mechanism 3 is in detachment status.By in production of polysilicon
Tail gas is passed into the second adsorbing mechanism 4 after carrying out booster compression by supercharging device 2, opens the 4th valve 12, closes first
Valve 9, tail gas switch to the second adsorbing mechanism 4 from the first adsorbing mechanism 3, due to the second adsorbing mechanism 4 completed desorption, most
Regenerative process is completed eventually, and the 6th valve 13 is closed mode.After tail gas enters the second adsorbing mechanism 4 in production of polysilicon, the
Five valves 14, the second valve 10, the 3rd valve 11 are synchronous to be opened, and tail gas is through the 5th valve in the production of polysilicon after absorption
14, which flow to discharge duct, leaves the second adsorbing mechanism 4, and the alkali lye elution device for being partly into subsequent technique enters at alkali lye elution
Reason, another part after the second valve 10 by being reversely blown into the first adsorbing mechanism 3.The 7th of synchronous first hot-water line porch
Valve 16, the 9th valve 18 in the first hot-water line exit are opened, and are desorbed to the first adsorbing mechanism 3 and are provided heat, the first absorption
The material that mechanism 3 is adsorbed is in the production of polysilicon after absorption in the presence of tail gas and heat from the first adsorbing mechanism 3
Desorption gets off, and the tail gas containing a large amount of chlorosilanes enters elution device 5 through the 3rd valve 11 after desorption, makes in elution device 5
With the elution liquid condensing of the silicon tetrachloride containing liquid and the tail gas of desorption out is eluted, carries out the elution recovery of chlorosilane.
After first adsorbing mechanism 3 desorption certain time, the second adsorbing mechanism will be passed through by closing the 3rd valve 11 and the second valve 10, stopping
Tail gas is passed into the first adsorbing mechanism 3 in production of polysilicon after 4 absorption, while by the of synchronous first hot-water line porch
Seven valves 16, the 9th valve 18 in the first hot-water line exit are closed.The 8th valve of the first cold water pipe porch setting is opened again
The tenth valve 19 that the 17, second cold water pipe exit of door is set, cools to the first adsorbing mechanism 3, when the first adsorbing mechanism 3
After temperature drops to a certain degree, the first adsorbing mechanism 3 reaches stand-by state, and the second adsorbing mechanism 4 enters detachment status.
Said process circulation is carried out.It is achieved thereby that the processing of the serialization of whole system, substantially increases operating efficiency.
The elution liquid condensing of the silicon tetrachloride containing liquid in scrubbed device 5 simultaneously elutes the polysilicon of desorption out
Tail gas directly outer can be discharged in air in production.
Tail gas mainly contains nitrogen and hydrogen in production of polysilicon after absorption, enters subsequent technique using pressure difference
Alkali lye elution device carries out alkali lye elution processing, and the tail gas after processing can directly carry out arranging outside, the polysilicon life after absorption
Tail gas is used to be desorbed the adsorbent equipment after other absorption in production.
Tail gas fills after the modified activated carbon Adsorption Concentration in adsorbent equipment using by other absorption in production of polysilicon
Tail gas in the production of polysilicon after absorption is put, the heat exchanger tube 6 with fin 7 is carried out under conditions of being passed through hot water in adsorbent equipment
The desorption of chlorosilane, the chlorosilane gas containing a small amount of fixed gas after desorption are eluted into elution device 5, for chlorine silicon
The recovery of alkane, it is -40~0 DEG C that elution, which uses the temperature of silicon tetrachloride, the chlorine in scrubbed rear production of polysilicon in tail gas
Silane accounting is 1~5%, and the alkali lye elution device of tail gas into subsequent technique enters in production of polysilicon after this part is scrubbed
Outer arrange is carried out after row alkali lye elution processing.Due to after adsorption/desorption so that in the production of polysilicon for being desorbed out in tail gas
The content of fixed gas substantially reduce, can so greatly improve condensation point so that tail gas in the production of polysilicon for being desorbed out
It is easier to make for condensing.The method of the present embodiment can be carried out elution and absorb be desorbed out under relatively high condensation temperature
Chlorosilane and hydrogen chloride in production of polysilicon in tail gas.
Preferably, adsorbent equipment includes the first adsorbing mechanism 3, the second adsorbing mechanism 4, the first adsorbing mechanism 3 and second
Adsorbing mechanism 4 alternately carries out adsorption and desorption to tail gas in production of polysilicon, obtains tail in the production of polysilicon after absorption
Tail gas in gas, the production of polysilicon of desorption out.Certainly, the first adsorbing mechanism 3 can also be not connected to the second adsorbing mechanism 4,
As long as meeting both, alternately adsorption and desorption works.
It is further preferred that the first adsorbing mechanism 3 is connected with the second adsorbing mechanism 4, when the first adsorbing mechanism 3 is given birth to polysilicon
When tail gas is adsorbed in production, it can be used in all or part of production of polysilicon obtained after the absorption of the first adsorbing mechanism 3
Tail gas is desorbed to the second adsorbing mechanism 4；It can so avoid introducing what foreign gas was desorbed the first adsorbing mechanism 3
Step, and can cause after the first adsorbing mechanism 3 adsorbs in obtained all or part of production of polysilicon tail gas continue into
Enter the second adsorbing mechanism 4 to carry out after after-treatment being handled in follow-up technique again.
When tail gas adsorbs during the second adsorbing mechanism 4 is to production of polysilicon, it can be used and inhaled by the second adsorbing mechanism 4
Tail gas is desorbed to the first adsorbing mechanism 3 in attached obtained all or part of production of polysilicon.It can so avoid introducing
The step of foreign gas is desorbed to the second adsorbing mechanism 4, and can cause what is obtained after the second adsorbing mechanism 4 adsorbs
Tail gas goes successively to the first adsorbing mechanism 3 and carries out after after-treatment entering in follow-up technique again in all or part of production of polysilicon
Row processing.
The present embodiment provides tail in a kind of system processing production of polysilicon using tail gas in above-mentioned processing production of polysilicon
The method of gas, tail gas includes nitrogen, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride in production of polysilicon, method include with
Lower step：
1) tail gas in the production of polysilicon before adsorbing is carried out being pressurized to 0.5Mpa.
2) tail gas in production of polysilicon is adsorbed at 30 DEG C, adsorbs the dichloro-dihydro in tail gas in production of polysilicon
Silicon, trichlorosilane, hydrogen chloride, tail gas in the production of polysilicon after absorption is obtained, in the production of polysilicon after absorption
Tail gas includes nitrogen and hydrogen；And tail gas key component is nitrogen and hydrogen in the production of polysilicon after absorption.Preferably
It is that the adsorption step can also adsorb in production of polysilicon the impurity containing boron, phosphorus in tail gas.Specifically, in the present embodiment
Adsorbent used in adsorption step is modified activated carbon, dichlorosilane in adsorbable production of polysilicon in tail gas,
Trichlorosilane, hydrogen chloride and the impurity containing boron, phosphorus.
3) adsorbed material is desorbed using tail gas in the obtained production of polysilicon after absorption, desorption
Temperature is 100 DEG C, obtains tail gas in the production of polysilicon of desorption out, and tail gas includes dichloro in the production of polysilicon for being desorbed out
Dihydro silicon, trichlorosilane and hydrogen chloride.
4) using the leacheate of the silicon tetrachloride containing liquid in the production of polysilicon that -20 DEG C of elution have been desorbed out
Tail gas, obtains tail gas in scrubbed leacheate and scrubbed production of polysilicon, and scrubbed leacheate includes four
Silicon chloride, dichlorosilane, trichlorosilane and hydrogen chloride.And tail gas key component is nitrogen in scrubbed production of polysilicon
And hydrogen.Impurity concentration containing boron, phosphorus in scrubbed leacheate has reached relatively low level, through follow-up rectifying
The production of polysilicon is can be directly used for after the separation of tower component.Due to after adsorption/desorption so that the polysilicon life for being desorbed out
The content of fixed gas in production in tail gas substantially reduces, and can so greatly improve condensation point so that the polysilicon for being desorbed out
Tail gas is easier to make for condensing in production.The method of the present embodiment can carry out elution absorption under relatively high condensation temperature
Chlorosilane and hydrogen chloride in the production of polysilicon of desorption out in tail gas, realize effective recovery to chlorosilane in tail gas,
Reduce cooling medium consumption and equipment investment.
By handling in production of polysilicon after the method and system of tail gas, tail gas master in the production of polysilicon after absorption
It is nitrogen and hydrogen to want component, can be directly vented after the alkali lye elution of subsequent technique；Production of polysilicon after scrubbed
Middle tail gas key component is nitrogen and hydrogen, and wherein chlorosilane accounting is 1~5wt%, and dress is eluted by the alkali lye of subsequent technique
Can directly it be vented after putting alkali lye elution, scrubbed leacheate puts into profit again after entering the rectifier unit separation of subsequent technique
In.
The method and system of tail gas in processing production of polysilicon in the present embodiment, by entering to tail gas in production of polysilicon
Row absorption, obtains tail gas in the production of polysilicon after absorption, and the tail gas can be direct after entering follow-up alkali lye treatment process
Emptying；Again by the way that the material of absorption is desorbed, the tail gas in the production of polysilicon of desorption out is obtained, the master in the tail gas
It is dichlorosilane, trichlorosilane and hydrogen chloride to want component, and the content of fixed gas therein is very low, so that what desorption came out
Tail gas in production of polysilicon is good using the effect of silicon tetrachloride condensation elution, the dichlorosilane of wherein most, trichlorine hydrogen
Silicon and hydrogen chloride are leached, and can be reclaimed into follow-up rectification working process, obtained scrubbed production of polysilicon
Middle tail gas can be directly vented after entering follow-up alkali lye treatment process, the chlorosilane in scrubbed production of polysilicon in tail gas
It is very low with the content of hydrogen chloride, so being substantially reduced in the alkali lye consumption amount carried out used in follow-up alkali lye treatment process.
Effective recovery of chlorosilane in tail gas can not be realized for existing cryogenic condensation technology, while continues to reduce condensation
Temperature increases the defects of cooling medium consumption and equipment investment problem.The side of tail gas in processing production of polysilicon in the present embodiment
When method and system can may be implemented in the identical chlorosilane rate of recovery in this way, elution low temperature silicon tetrachloride cooling medium
Consumption declines 30~50%, is continued after entering by tail gas in the scrubbed production of polysilicon that is obtained after elution device 5
During the alkali lye elution device processing of technique so that alkali lye consumption amount declines 30~50%, and it is harmless that production of polysilicon tail gas can be achieved
Change is handled.
Therefore, in the processing production of polysilicon in the present embodiment tail gas method and system, realize production of polysilicon mistake
Effective processing of tail gas in journey, the decline of production of polysilicon cost is realized, the harmless discharge of system tail gas, realizes that polysilicon is given birth to
Produce transformation of the enterprise to innoxious, environmentally friendly chemical enterprise.
Preferably, the system also includes alkali lye elution device, and alkali lye elution device is connected with elution device, alkali lye elution
Device is used to tail gas in the production of polysilicon after absorption carrying out alkali lye elution, the tail gas after emptying elution.Or alkali lye
Elution device is also connected with adsorbent equipment, and tail gas carries out alkali lye elution in scrubbed production of polysilicon, after emptying elution
Tail gas.
Preferably, the system also includes rectifier unit, and rectifier unit is connected with elution device, and rectifier unit is used for will be through
The leacheate for crossing elution separates dichlorosilane and trichlorosilane by rectifying.
Embodiment 3
The present embodiment provides a kind of system processing polysilicon life of tail gas in processing production of polysilicon using in embodiment 2
The method of tail gas in production, tail gas includes nitrogen, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride, method in production of polysilicon
Comprise the following steps：
1) tail gas in the production of polysilicon before adsorbing is carried out being pressurized to 0.1Mpa.
2) tail gas in production of polysilicon is adsorbed at 0 DEG C, adsorb dichlorosilane in production of polysilicon in tail gas,
Trichlorosilane, hydrogen chloride, tail gas in the production of polysilicon after absorption is obtained, tail gas in the production of polysilicon after absorption
Including nitrogen and hydrogen；And tail gas key component is nitrogen and hydrogen in the production of polysilicon after absorption.Preferably, should
Adsorption step can also adsorb in production of polysilicon the impurity containing boron, phosphorus in tail gas.Specifically, the absorption step in the present embodiment
Adsorbent used in rapid is modified activated carbon, dichlorosilane, trichlorine hydrogen in adsorbable production of polysilicon in tail gas
Silicon, hydrogen chloride and the impurity containing boron, phosphorus.
3) adsorbed material is desorbed using tail gas in the obtained production of polysilicon after absorption, desorption
Temperature is 180 DEG C, obtains tail gas in the production of polysilicon of desorption out, and tail gas includes dichloro in the production of polysilicon for being desorbed out
Dihydro silicon, trichlorosilane and hydrogen chloride.
4) leacheate of silicon tetrachloride of the use containing liquid tail in the production of polysilicon that 0 DEG C of elution has been desorbed out
Gas, obtains tail gas in scrubbed leacheate and scrubbed production of polysilicon, and scrubbed leacheate includes tetrachloro
SiClx, dichlorosilane, trichlorosilane and hydrogen chloride.And in scrubbed production of polysilicon tail gas key component be nitrogen and
Hydrogen.Impurity concentration containing boron, phosphorus in scrubbed leacheate has reached relatively low level, through follow-up rectifying column
The production of polysilicon is can be directly used for after component separation.
The method of tail gas can may be implemented in identical chlorine in this way in processing production of polysilicon in the present embodiment
During the silane rate of recovery, elution declines 30~50% with low temperature silicon tetrachloride cooling dielectric dissipation amount, passes through the warp obtained after elution
Cross elution production of polysilicon in tail gas after entering continue technique alkali lye elution device processing when so that alkali lye consumption amount decline
30~50%, the processing of production of polysilicon tail gas hazard-free can be achieved.
Embodiment 4
The present embodiment provides a kind of system processing polysilicon life of tail gas in processing production of polysilicon using in embodiment 2
The method of tail gas in production, tail gas includes nitrogen, hydrogen, dichlorosilane, trichlorosilane and hydrogen chloride, method in production of polysilicon
Comprise the following steps：
1) tail gas in the production of polysilicon before adsorbing is carried out being pressurized to 0.2Mpa.
2) tail gas in production of polysilicon is adsorbed at 70 DEG C, adsorbs the dichloro-dihydro in tail gas in production of polysilicon
Silicon, trichlorosilane, hydrogen chloride, tail gas in the production of polysilicon after absorption is obtained, in the production of polysilicon after absorption
Tail gas includes nitrogen and hydrogen；And tail gas key component is nitrogen and hydrogen in the production of polysilicon after absorption.Preferably
It is that the adsorption step can also adsorb in production of polysilicon the impurity containing boron, phosphorus in tail gas.Specifically, in the present embodiment
Adsorbent used in adsorption step is modified activated carbon, dichlorosilane in adsorbable production of polysilicon in tail gas,
Trichlorosilane, hydrogen chloride and the impurity containing boron, phosphorus.
3) adsorbed material is desorbed using tail gas in the obtained production of polysilicon after absorption, desorption
Temperature is 140 DEG C, obtains tail gas in the production of polysilicon of desorption out, and tail gas includes dichloro in the production of polysilicon for being desorbed out
Dihydro silicon, trichlorosilane and hydrogen chloride.
4) using the leacheate of the silicon tetrachloride containing liquid in the production of polysilicon that -40 DEG C of elution have been desorbed out
Tail gas, obtains tail gas in scrubbed leacheate and scrubbed production of polysilicon, and scrubbed leacheate includes four
Silicon chloride, dichlorosilane, trichlorosilane and hydrogen chloride.And tail gas key component is nitrogen in scrubbed production of polysilicon
And hydrogen.Impurity concentration containing boron, phosphorus in scrubbed leacheate has reached relatively low level, through follow-up rectifying
The production of polysilicon is can be directly used for after the separation of tower component.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (14)
1. a kind of method for handling tail gas in production of polysilicon, tail gas includes nitrogen, hydrogen, dichloro two in the production of polysilicon
Hydrogen silicon, trichlorosilane and hydrogen chloride, it is characterised in that the described method comprises the following steps：
Tail gas in production of polysilicon is adsorbed, dichlorosilane, trichlorosilane in absorption production of polysilicon in tail gas, chlorine
Change hydrogen, obtain tail gas in the production of polysilicon after absorption；
Adsorbed material is desorbed, obtains tail gas in the production of polysilicon of desorption out；
Using the silicon tetrachloride containing liquid elution liquid condensing and elute it is described desorption out production of polysilicon in tail gas, obtain
The tail gas into scrubbed leacheate and scrubbed production of polysilicon.
2. the method for tail gas in processing production of polysilicon according to claim 1, it is characterised in that the adsorption step is also
The impurity containing boron, phosphorus in tail gas can be adsorbed in production of polysilicon.
3. the method for tail gas in processing production of polysilicon according to claim 1 or 2, it is characterised in that the absorption step
Suddenly adsorbed using adsorbent, the adsorbent is modified activated carbon.
4. the method for tail gas in processing production of polysilicon according to claim 1, it is characterised in that the adsorption step
Temperature is 0~70 DEG C, and the temperature of the desorption is 100~180 DEG C, and the temperature of the rinsing step is -40~0 DEG C.
5. the method for tail gas in processing production of polysilicon according to claim 1, it is characterised in that it is described will be adsorbed
The step of material is desorbed be specially：Using tail gas in the obtained production of polysilicon after absorption to adsorbed material
It is desorbed.
6. the method for tail gas in processing production of polysilicon according to claim 1, it is characterised in that also including following step
Suddenly：
Tail gas in production of polysilicon before adsorbing is carried out being pressurized to 0.1~0.5Mpa.
7. a kind of system for handling tail gas in production of polysilicon, tail gas includes nitrogen, hydrogen, dichloro two in the production of polysilicon
Hydrogen silicon, trichlorosilane and hydrogen chloride, it is characterised in that the system includes：
Adsorbent equipment, the adsorbent equipment are used to adsorb tail gas in production of polysilicon, adsorb in production of polysilicon in tail gas
Dichlorosilane, trichlorosilane, hydrogen chloride, obtain tail gas in the production of polysilicon after absorption；The adsorbent equipment is also
For adsorbed material to be desorbed, tail gas in the production of polysilicon of desorption out is obtained；
Elution device, it is connected with the adsorbent equipment, the elution device is used for the elution using the silicon tetrachloride containing liquid
Liquid condensing simultaneously elutes tail gas in the production of polysilicon of the desorption out, obtains scrubbed leacheate and scrubbed more
Tail gas in crystal silicon production.
8. the system of tail gas in processing production of polysilicon according to claim 7, it is characterised in that the adsorbent equipment bag
The first adsorbing mechanism, the second adsorbing mechanism are included, first adsorbing mechanism replaces with second adsorbing mechanism gives birth to polysilicon
Tail gas carries out adsorption and desorption in production, obtains tail gas in the production of polysilicon after absorption, the polycrystalline of the desorption out
Tail gas in silicon production.
9. the system of tail gas in processing production of polysilicon according to claim 8, it is characterised in that first adsorption machine
Structure is connected with second adsorbing mechanism, when tail gas adsorbs during first adsorbing mechanism is to production of polysilicon, can be made
With tail gas in all or part of production of polysilicon obtained after first adsorbing mechanism absorption to second adsorption machine
Structure is desorbed；
When tail gas adsorbs during second adsorbing mechanism is to production of polysilicon, it can be used and pass through second adsorbing mechanism
Tail gas is desorbed to first adsorbing mechanism in all or part of production of polysilicon obtained after absorption.
10. the system of tail gas in processing production of polysilicon according to claim 7, it is characterised in that the adsorbent equipment
Including the first adsorbing mechanism, the second adsorbing mechanism,
First adsorbing mechanism includes being arranged at the first entrance of described first adsorbing mechanism one end and first outlet, is arranged at
The other end of second outlet of first adsorbing mechanism, the first outlet are connected with the elution device；
Second adsorbing mechanism includes being arranged at the second entrance of described second adsorbing mechanism one end and the 3rd outlet, is arranged at
Other end of 4th outlet of second adsorbing mechanism, the 3rd outlet is connected with the elution device；
Wherein, the second outlet connects with the described 4th outlet,
When first adsorbing mechanism is used to adsorb dichlorosilane in production of polysilicon in tail gas, trichlorosilane, hydrogen chloride
When, tail gas enters first adsorbing mechanism by the first entrance in production of polysilicon, after absorption, obtain by inhaling
Tail gas is discharged by the second outlet in attached production of polysilicon, can be by production of polysilicon of all or part after absorption
Middle tail gas is redirected back into second adsorbing mechanism by the described 4th outlet, and the material of second adsorbing mechanism absorption is carried out
Reversely it is desorbed, tail gas is discharged by the described 3rd outlet in the production of polysilicon for being desorbed out, enters the elution device；
When second adsorbing mechanism is used to adsorb dichlorosilane in production of polysilicon in tail gas, trichlorosilane, hydrogen chloride
When, tail gas enters second adsorbing mechanism by the second entrance in production of polysilicon, after absorption, obtain by inhaling
Tail gas is discharged by the described 4th outlet in attached production of polysilicon, can be by production of polysilicon of all or part after absorption
Middle tail gas is redirected back into first adsorbing mechanism by the second outlet, and the material of first adsorbing mechanism absorption is carried out
Reversely it is desorbed, tail gas is discharged by the first outlet in the production of polysilicon for being desorbed out, enters the elution device.
11. the system of tail gas in processing production of polysilicon according to claim 10, it is characterised in that first absorption
Mechanism is 3~6 adsorption columns, and second adsorbing mechanism is 3~6 adsorption columns.
12. the system of tail gas in processing production of polysilicon according to claim 7, it is characterised in that also including heat exchanger,
The heat exchanger is used to exchange heat to the adsorbent equipment.
13. the system of tail gas in processing production of polysilicon according to claim 12, it is characterised in that the heat exchanger is set
It is placed in the adsorbent equipment, the heat exchanger includes being used to be passed through thermal conducting agent and the heat exchange to be exchanged heat with the adsorbent equipment
Pipe, the heat exchanger, which also includes being arranged at, is used for the fin for increasing heat exchange area on the heat exchanger tube.
14. the system of tail gas in processing production of polysilicon according to claim 7, it is characterised in that also include supercharging dress
Put, the supercharging device is connected with the adsorbent equipment, and the supercharging device is used for the polycrystalline before the entrance adsorbent equipment
Tail gas is pressurized in silicon production.
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