CN107623500A - Bulk acoustic wave filter device and method of manufacturing the same - Google Patents
Bulk acoustic wave filter device and method of manufacturing the same Download PDFInfo
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- CN107623500A CN107623500A CN201710564814.1A CN201710564814A CN107623500A CN 107623500 A CN107623500 A CN 107623500A CN 201710564814 A CN201710564814 A CN 201710564814A CN 107623500 A CN107623500 A CN 107623500A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 32
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 14
- 238000000059 patterning Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000003014 reinforcing effect Effects 0.000 abstract 4
- 239000010410 layer Substances 0.000 description 246
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000008859 change Effects 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229910052741 iridium Inorganic materials 0.000 description 4
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229910052707 ruthenium Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000011664 signaling Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02118—Means for compensation or elimination of undesirable effects of lateral leakage between adjacent resonators
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a bulk acoustic wave filter device and a method of manufacturing the bulk acoustic wave filter device. The bulk acoustic wave filter device includes: a first layer forming an air gap with the substrate; a lower electrode disposed over the first layer; a piezoelectric layer disposed to cover a portion of the lower electrode; an upper electrode disposed over the piezoelectric layer; a frame layer disposed above or below the upper electrode; and a lower electrode reinforcing layer disposed on a portion of the lower electrode other than the portion where the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode when forming the upper electrode or by separating the lower electrode reinforcing layer from the frame layer when forming the frame layer.
Description
This application claims No. 10-2016-0089387 submitted on July 14th, 2016 in Korean Intellectual Property Office with
And the 10-2016-0159251 korean patent applications submitted on November 28th, 2016 in Korean Intellectual Property Office is preferential
Power and rights and interests, the disclosure of the korean patent application are all incorporated herein by quoting.
Technical field
Description is related to a kind of bulk accoustic wave filter device and the method for manufacturing the bulk accoustic wave filter device below.
Background technology
Recently, according to the rapid development of the communication technology, split signalling treatment technology and radio frequency (RF) component skill be present
The demand of art.
Specifically, the positive demand to the radio frequency component of miniaturization be present in the trend minimized according to radio communication device.
Wave filter is fabricated to realize radio frequency by bulk acoustic wave (BAW) resonator by using the technology of manufacture semiconductive thin film wafer
The miniaturization of wave filter in component.
Following film-type element is embodied as wave filter by bulk acoustic wave (BAW) resonator：Wherein piezoelectricity dielectric deposition
On the Silicon Wafer as semiconductor substrate, resonance is produced with piezoelectric property by using piezoelectricity dielectric material.Bulk acoustic wave
(BAW) application field of resonator includes making in such as mobile communications device, chemistry and biological device and other similar devices
Those small and in light weight wave filters, oscillator, resonant element and acoustic resonance mass sensor.
In addition, various planforms and function are had studied to strengthen the function and structure characteristic of bulk acoustic wave resonator,
And it is necessary that exploitation reduces the structure and technology of the characteristic variations of bulk acoustic wave resonator.
The content of the invention
Present invention is provided to introduce the design of selection according to reduced form, it is further in a specific embodiment below
The design is described.Present invention is not intended to determine the key feature or essential feature of theme claimed, also not
It is intended for assisting in the scope of theme claimed.
According to embodiment, there is provided a kind of bulk accoustic wave filter device, the bulk accoustic wave filter device include：First layer,
With forming air gap together with substrate；Bottom electrode, it is arranged on the first layer；Piezoelectric layer, it is arranged to cover the bottom electrode
A part；Top electrode, it is arranged on the piezoelectric layer；Ccf layer, be arranged on the Top electrode or under；And
Bottom electrode enhancement layer, on the part in addition to being arranged on the part except may be provided with the piezoelectric layer of the bottom electrode, wherein,
The bottom electrode enhancement layer can by separate the bottom electrode enhancement layer and the Top electrode when forming the Top electrode and
Formed or formed by separating the bottom electrode enhancement layer and the ccf layer when forming the ccf layer.
The bottom electrode enhancement layer can by being formed with the bottom electrode identical material, or by comprising with the bottom electrode phase
The material of same material is formed.
The bulk accoustic wave filter device may also include the second layer, and the second layer, which is formed, to be covered described in the air gap
On first layer.
The bulk accoustic wave filter device may also include third layer, and the third layer is arranged on the first layer, covered
Part in addition to covering the part except supporting metal pad of the Top electrode, and the bottom electrode enhancement layer is not covered.
Metal pad may be formed on the bottom electrode enhancement layer and the Top electrode or the ccf layer.
The thickness of the bottom electrode enhancement layer corresponds to the thickness of the Top electrode or the ccf layer.
The bulk accoustic wave filter device may also include metal pad, and the metal pad is arranged on the bottom electrode enhancing
On layer.
The bottom electrode enhancement layer can be formed simultaneously with the Top electrode, and the Top electrode and bottom electrode enhancing
Layer can be separated from each other by patterning.
The bottom electrode enhancement layer can be formed simultaneously with the ccf layer, and the ccf layer and bottom electrode enhancing
Layer can be separated from each other by patterning.
According to embodiment, there is provided a kind of method for manufacturing bulk accoustic wave filter device, methods described include：Form surface
Layer, for covering bottom electrode, piezoelectric layer, ccf layer and first layer；And the superficial layer is divided into by bottom electrode by etching and increased
Strong layer and Top electrode, and remove the superficial layer the part except the bottom electrode enhancement layer and the Top electrode can be formed it
Outer part.
The bottom electrode enhancement layer can by being formed with the bottom electrode identical material, or by comprising with the bottom electrode phase
The material of same material is formed.
Methods described may also include：Before the superficial layer is formed, sacrifice layer is formed on substrate；In the substrate and
The first layer is formed on the sacrifice layer, to cover the sacrifice layer；The second layer is formed on the first layer, by described in
The second layer is arranged on the sacrifice layer；And the bottom electrode is formed on the second layer so that the bottom electrode
A part may be provided on the sacrifice layer.
Methods described may also include：After the bottom electrode is formed, the piezoelectric layer is formed, for covering the lower electricity
Pole, the second layer and the first layer, and the piezoelectric layer is exposed to outside；The framework is formed on the piezoelectric layer
Layer；And remove a part for the piezoelectric layer so that a part for the bottom electrode and a part for the first layer can be sudden and violent
Reveal outside.
Methods described may also include：After the superficial layer is divided into the bottom electrode enhancement layer and the Top electrode,
Third layer is formed, for making the bottom electrode enhancement layer and the Top electrode partially exposed to outside.
The step of forming the third layer includes：The third layer is formed, for covering the bottom electrode enhancement layer, described
Top electrode and the first layer, and the third layer is exposed to outside, and remove one of the third layer by etching
Point, so that the bottom electrode enhancement layer and the Top electrode are partially exposed to outside.
Methods described may also include：Formed on the part of the exposure of the bottom electrode enhancement layer and the Top electrode
Metal pad, and the metal pad is exposed to outside.
Methods described may also include：Before the metal pad is formed, from the bottom electrode enhancement layer and the upper electricity
The surface of the part of the exposure of pole removes oxide material.
Methods described may also include：After the metal pad is formed, by removing the institute formed on the substrate
Sacrifice layer is stated to form air gap.
According to embodiment, there is provided a kind of method for manufacturing bulk accoustic wave filter device, methods described include：Form surface
Layer, for covering bottom electrode, piezoelectric layer, Top electrode and first layer, wherein, the superficial layer can be exposed to outside；And pass through
The superficial layer is divided into bottom electrode enhancement layer and ccf layer by etching, and remove the superficial layer except the lower electricity can be formed
Part outside the part of pole enhancement layer and the ccf layer.
By detailed description below, accompanying drawing and claim, further feature and aspect will be evident.
Brief description of the drawings
Fig. 1 is the schematic sectional view for showing the bulk accoustic wave filter device according to embodiment；
Fig. 2 to Fig. 9 is the artwork for the method for showing the manufacture bulk accoustic wave filter device according to embodiment；And
Figure 10 is the schematic sectional view for showing the bulk accoustic wave filter device according to embodiment.
In whole the drawings and specific embodiments, identical label instruction identical element.Accompanying drawing can not to scale
Draw, for the sake of clear, explanation and convenience, the relative size of element, ratio and description in accompanying drawing can be exaggerated.
Embodiment
Detailed description below is provided, to help reader to obtain to the complete of method described here, equipment and/or system
Foliation solution.However, after it understanding of present disclosure, method, equipment and/or the various of system described herein change
Become, modification and equivalent will be apparent.For example, operation order described here is only example, and it is not limited to herein
The example illustrated, but in addition to the operation except that must occur according to particular order, present disclosure can understanding of
After make obvious change.In addition, in order to increase clearness and terseness, retouching for feature as known in the art can be omitted
State.
Feature described here can be implemented in different forms, and will be not construed as being confined to described here show
Example.More precisely, example described here is provided, just to show to incite somebody to action after it understanding of present disclosure
It is some feasible patterns in a variety of feasible patterns for obviously realize method described here, equipment and/or system.
Throughout the specification, when element (such as layer, region or substrate) be described as " " another element " on ", " even
Be connected to " another element or " being attached to " another element when, its can directly " " another element " on ", " being connected to " another element or
" being attached to " another element, or one or more other elements between them may be present.By contrast, element is worked as
Be described as " directly existing " another element " on ", " being directly connected to " another element or during " being bonded directly to " another element, can
In the absence of other elements between them.
It is individual that term "and/or" as used herein includes any one and any two during correlation is listd or more
Any combinations.
Although the term of such as " first ", " second " and " the 3rd " can be used herein to describe various components, component, region,
Layer or part, but these components, component, region, layer or part should not be limited by these terms.More precisely, these terms
It is only used for distinguishing a component, component, region, layer or part and another component, component, region, layer or part.Therefore,
In the case where not departing from the teaching of example, the first component, component, region, layer or the portion that are related in example described here
Divide and may be additionally referred to as second component, component, region, layer or part.
In order to facilitate description, can be used herein such as " ... on ", " top ", " ... under " and " lower section "
Space correlation term the relation between an element and another element as shown in the drawings described.Such space is relative
Term is intended to comprising the different azimuth of device in use or operation in addition to the orientation described in accompanying drawing.If for example,
Device in accompanying drawing is reversed, then be described as relative to another element positioned at " on " or the element of " top " will then be retouched
State for relative to another element positioned at " under " or " lower section ".Therefore, term " ... on " according to the direction in space of device
Including " ... on " and " ... under " two kinds of orientation.Device can also be positioned (for example, rotation otherwise
90 degree or at other orientations), and corresponding explanation can be made to space correlation term as used herein.
Term as used herein is merely to describe various examples, without being used to limit the disclosure.Unless context is another
Clearly indicate outside, otherwise singulative is also intended to comprising plural form.Term "comprising", " comprising " and " having " are enumerated and deposited
In feature, quantity, operation, component, element and/or the combinations thereof stated, but one or is not more precluded the presence or addition of
A number of other features, quantity, operation, component, element and/or combinations thereof.
Due to manufacturing technology and/or tolerance, the change of the shape shown in accompanying drawing can occur.Therefore, it is described here
Example is not limited to the specific shape shown in accompanying drawing, but the change in shape including occurring in manufacturing process.
The feature of example described here can be various will become apparent to after it understanding of present disclosure
Mode is combined.In addition, although example described here has a variety of constructions, present disclosure understanding of
It is also feasible for will become apparent to other constructions afterwards.
Fig. 1 is the schematic sectional view for showing the bulk accoustic wave filter device according to embodiment.
Reference picture 1, substrate 110, first layer 120, the second layer are included according to the bulk accoustic wave filter device 100 of embodiment
130th, bottom electrode 140, piezoelectric layer 150, Top electrode 160, ccf layer 170, third layer 180, metal pad 190 and bottom electrode increase
Strong layer 200.
Substrate 110 is the substrate for being stacked with silicon.For example, Silicon Wafer can be used as substrate.In addition, can be in the top table of substrate 110
The protective layer (not shown) for protecting silicon is formed on face.That is, protective layer may be formed on the top surface of substrate 110,
To prevent from etching substrate 110 when performing the operation of removal sacrifice layer 210 which will be described.
First layer 120 is formed or is arranged on substrate 110 and air gap A.That is, first layer 120 may be formed at substrate
110 and sacrifice layer 210 on, to cover sacrifice layer 210 of the formation on substrate 110 which will be described.Hereafter, it is once sacrificial
Domestic animal layer 210 is removed, and air gap A is just formed under first layer 120 and on substrate 110.For purposes of description, use is set
The term put describes the formation and setting of various layers and element described in this specification.
As an example, first layer 120 is by silica (SiO2) or include silica (SiO2) material formed.First
Layer 120 may further be used to prevent the bottom for etching resonant structure when performing the operation for removing sacrifice layer 210.
In this example, resonant structure is a part for bulk accoustic wave filter device 100, and resonant structure is with which will be described
Piezoelectric layer 150 deforms and deforms and vibrate together with piezoelectric layer 150.
The second layer 130 is formed on first layer 120, and covers air gap A.In addition, the second layer 130 can be by silicon nitride (SiN)
Or the material comprising silicon nitride (SiN) is formed.
In addition, the second layer 130 is used to compensate the stress as caused by resonant structure together with first layer 120, and it is humorous for reducing
Shake portion structure deformation (for example, first layer 120 and substrate 110 combine in the region for forming air gap A), or reduce resonance
Torsional deformation (distortion) between portion and the adjacent area of resonant structure.
Bottom electrode 140 is formed on the second layer 130.As an example, bottom electrode 140 is by conductive material, such as molybdenum (Mo), ruthenium
(Ru), tungsten (W), iridium (Ir), platinum (Pt) or their alloy are formed.
In addition, bottom electrode 140 can be used as receiving the input electrode of such as electric signal of radio frequency (RF) signal, or can be used as
Output electrode.In the example that bottom electrode 140 is input electrode, Top electrode 160 is output electrode.It is output in bottom electrode 140
In another example of electrode, Top electrode 160 is input electrode and receives electric signal.
In one kind constructs, piezoelectric layer 150 covers at least a portion of bottom electrode 140 and a part for the second layer 130.This
Outside, the electric signal received on bottom electrode 140 or Top electrode 160 is converted to sound wave by piezoelectric layer 150.
As an example, in response to inducing the electric field changed over time in Top electrode 160, piezoelectric layer 150 will be from Top electrode
The electric signal of 160 inputs is converted to physical vibration.In addition, the physical vibration of conversion is converted to sound wave by piezoelectric layer 150.This
In the case of, the electric field changed over time can be induced.As a result, piezoelectric layer 150 uses the electric field induced in piezoelectric layer 150
Bulk acoustic wave is produced along thickness direction.
In this way, piezoelectric layer 150 produces the bulk acoustic wave for converting electrical signals to sound wave.
In this example, piezoelectric layer 150 by bottom electrode 140 cvd nitride aluminium, zinc oxide or lead zirconate titanate formed.
When piezoelectric layer 150 is formed by aluminium nitride (AlN), piezoelectric layer 150 may also include rare earth metal.For example, rare earth metal may include
At least one of scandium (Sc), erbium (Er), yttrium (Y) and lanthanum (La).
By way of example, Top electrode 160 is formed as covering frame rack-layer 170, and by conductive material, such as molybdenum
(Mo), ruthenium (Ru), tungsten (W), iridium (Ir), platinum (Pt) etc. or their alloy are formed.In addition, as described above, Top electrode 160 can be used
Make input electrode or output electrode, input electrode receives the electric signal of such as radio frequency (RF) signal, output electrode output RF signals.
Ccf layer 170 is arranged on piezoelectric layer 150.As an example, ccf layer 170 is arranged under Top electrode 160, and set
Put in the various pieces in addition to the middle body of piezoelectric layer 150 of piezoelectric layer 150.In addition, ccf layer 170 can by with it is upper
The identical material of electrode 160 is formed.However, the material not limited to this of ccf layer 170, and ccf layer 170 can by with Top electrode
160 different materials are formed.
Ccf layer 170 will be reflexed in effective district (active region) in lateral wave caused by resonance, by resonance
Energy is limited in effective district.
Third layer 180 be formed as cover Top electrode 160 except the formation of Top electrode 160 has the part of metal pad 190
Outside part.Third layer 180 is arranged on first layer 120, covers at least a portion of bottom electrode 140, piezoelectric layer 150
At least partially, at least a portion of Top electrode 160, at least a portion of ccf layer 170.In one example, third layer 180
Protecting frame rack-layer 170 and Top electrode 160 are not damaged by during operation.In addition, the thickness of third layer 180 can be adjusted by etching
Degree, to adjust the frequency in final operation.
In addition, third layer 180 can also be provided at it is all other in addition to the region for being provided with metal pad 190
On region.
Metal pad 190 is electrically connected to bottom electrode 140 and Top electrode 160.
Bottom electrode enhancement layer 200 is formed in the surplus in addition to the part thereon formed with piezoelectric layer 150 of bottom electrode 140
In remaining part point, and can be by the way that bottom electrode enhancement layer 200 be separately arranged with Top electrode 160 when forming Top electrode 160 under
Electrode enhancement layer 200.In other embodiments, can by when forming ccf layer 170 by bottom electrode enhancement layer 200 and ccf layer
170 are separately arranged bottom electrode enhancement layer 200.
In addition, bottom electrode enhancement layer 200 can be by forming with the identical material of bottom electrode 140.
In addition, the thickness of bottom electrode enhancement layer 200 corresponds to the thickness of Top electrode 160.
The method to form bottom electrode enhancement layer 200 will be described in detail belows.
As described, because bottom electrode enhancement layer 200 is formed on bottom electrode 140, therefore even if bottom electrode enhancement layer 200 exists
Lost in subsequent technique, also prevent the loss of bottom electrode 140.
Therefore, bulk accoustic wave filter device is improved filter apparatus so that its electrical characteristics is unaffected.
According to conventional configurations, in order to which bottom electrode 140 is connected into metal pad 190, it is necessary to be arranged on by etching removal
Multiple layers on bottom electrode 140, so that bottom electrode 140 is exposed to outside.
Now, first, etchable piezoelectric layer 150, but can damage bottom electrode 140 when etching piezoelectric layer 150.Then,
Secondly, etchable protective layer, but now can also damage bottom electrode 140.In addition, for deposited metal pad 190, it is necessary to from upper
Some regions for forming metal pad 190 thereon of electrode 160 and bottom electrode 140 remove oxide material.It is used to go when performing
Except oxide material etching when, can again damage bottom electrode 140.
In this way, in the case where the thickness of bottom electrode 140 reduces because of the damage of bottom electrode 140, electricity can be negatively affected
Characteristic, make resistance value increase etc..
However, due to being formed as described above bottom electrode enhancement layer 200, therefore even if bottom electrode enhancement layer 200 is lost
Or be removed, it also prevent the loss of bottom electrode 140.It is therefore possible to prevent electrical characteristics deteriorate.
Hereinafter, the method for describing the manufacture bulk accoustic wave filter device according to embodiment with reference to the accompanying drawings.
Fig. 2 to Fig. 9 is the artwork for the method for showing the manufacture bulk accoustic wave filter device according to embodiment.
First, as shown in Figure 2, successively on substrate 110 formed sacrifice layer 210, first layer 120, the second layer 130, under
Electrode 140, piezoelectric layer 150 and ccf layer 170.
That is, sacrifice layer 210 is formed on substrate 110, first layer 120 is subsequently formed into the covering He of sacrifice layer 210
The remaining area of substrate 110.In addition, first layer 120 can be by silica (SiO2) or include silica (SiO2) material shape
Into.
Then, the second layer 130 is formed on first layer 120, to cover sacrifice layer 210.Although embodiment passes through example
Mode describes the example that the second layer 130 is formed as only covering sacrifice layer 210, but the not limited to this of the second layer 130, and the second layer
130 may extend away to cover the first layer 120 for the outside for being arranged on sacrifice layer and being arranged to cover sacrifice layer 210 simultaneously.In addition, the
Two layer 130 can the material by silicon nitride (SiN) or comprising silicon nitride (SiN) formed.
Then, bottom electrode 140 is formed on the second layer 130.Bottom electrode 140 can be by conductive material, such as molybdenum (Mo), ruthenium
(Ru), tungsten (W), iridium (Ir), platinum (Pt) etc. or their alloy are formed.In addition, at least a portion covering of bottom electrode 140 is sacrificed
Layer 210.
Then, piezoelectric layer 150 is formed.Piezoelectric layer 150 is formed as covering and is exposed to the bottom electrode 140 of outside, the second layer 130
With first layer 120.Piezoelectric layer 150 can be formed by cvd nitride aluminium, zinc oxide or lead zirconate titanate.
Then, ccf layer 170 is formed on piezoelectric layer 150.In addition, ccf layer 170 is formed so that piezoelectric layer 150 exposes
In the region for being arranged to cover sacrifice layer 210.
Then, as shown in figure 3, removing a part for piezoelectric layer 150.In this case, under removal piezoelectric layer 150 causes
A part for electrode 140 and a part for first layer 120 are exposed to outside.That is, removing piezoelectric layer 150 causes bottom electrode
140 and being arranged on the perimeter of resonant structure for first layer 120 be at least partially exposed to outside.
Then, as shown in figure 4, forming the 4th layer or superficial layer 230.Be formed as covering for 4th layer 230 and be exposed to outside
Bottom electrode 140, piezoelectric layer 150, ccf layer 170 and first layer 120.
4th layer 230 can by conductive material, molybdenum (Mo), ruthenium (Ru), tungsten (W), iridium (Ir), platinum (Pt) etc. or they
Alloy is formed.In other words, the 4th layer 230 can by being formed with the identical material of bottom electrode 140, or by comprising with bottom electrode 140
The material of identical material is formed.
Then, as shown in figure 5, being bottom electrode enhancement layer 200 and Top electrode 160 by etching the 4th layer 230 points, and go
Except the remainder in addition to bottom electrode enhancement layer 200 and Top electrode 160.
Then, as shown in fig. 6, forming third layer 180.Third layer 180 is formed as the bottom electrode increasing that covering is exposed to outside
Strong layer 200, Top electrode 160 and first layer 120.
Then, as shown in fig. 7, removing a part for third layer 180 by etching so that bottom electrode enhancement layer 200 and upper
Electrode 160 is partially exposed to outside.
Then, as shown in Figure 8, formed in bottom electrode enhancement layer 200 and being exposed on the part of outside for Top electrode 160
Metal pad 190.Before metal pad 190 is formed, remove outer in being exposed to for bottom electrode enhancement layer 200 and Top electrode 160
Oxide material present on the surface in portion.In this example, bottom electrode enhancement layer 200 and Top electrode 160 may be lost.
Then, as shown in Figure 9, sacrifice layer 210 is removed, to form the air gap A between substrate 110 and first layer 120.
As described above, strengthen bottom electrode 140 by changing common process order, without other technique and increasing
The thickness of big whole bottom electrode.That is, different from common process order, Top electrode 160 makes ccf layer 170 and piezoelectric layer
Formed after 150 patternings.Therefore, bottom electrode enhancement layer 200 is formed simultaneously with Top electrode 160, and then by pattern come
Top electrode 160 and bottom electrode enhancement layer 200 is set to be separated from each other.
Therefore, in the case where that need not add other technique or the thickness of bottom electrode 140 need not be increased, form
Bottom electrode enhancement layer 200.
Hereinafter, the bulk accoustic wave filter device according to another embodiment is described with reference to the accompanying drawings.Meanwhile will be by identical
Label represent with said modules identical component, and its detailed description will be omitted.
Figure 10 is the schematic sectional view for showing the bulk accoustic wave filter device according to another embodiment.
Reference picture 10, substrate 110, first layer 120, the are included according to the bulk accoustic wave filter device 300 of another embodiment
Two layer 130, bottom electrode 140, piezoelectric layer 150, Top electrode 360, ccf layer 370, third layer 180, metal pad 190 and lower electricity
Pole enhancement layer 400.
In addition, according to the bulk accoustic wave filter device 300 of embodiment and above-mentioned bulk accoustic wave filter device 100 (for example, figure
1) difference is：It is different to stack the order of Top electrode 360 and ccf layer 370, and bottom electrode enhancement layer 400 by
Bottom electrode enhancement layer 400 is separated with ccf layer 370 when forming ccf layer 370 and formed.
In other words, Top electrode 360 is formed to cover piezoelectric layer 150 on piezoelectric layer 150, and ccf layer 370 is subsequent
Be formed as covering Top electrode 360 and bottom electrode 140.Then, bottom electrode enhancement layer 400 is made to be separated with ccf layer 370, so as to be formed
Bottom electrode enhancement layer 400, and remove a part for ccf layer 370 so that the part exposure of Top electrode 360.
Meanwhile ccf layer 370 is with the identical material of bottom electrode 140 by forming, or by comprising with the identical material of bottom electrode 140
The material of material is formed.
As described, because bottom electrode enhancement layer 400 is formed on bottom electrode 140, therefore even if bottom electrode enhancement layer 400 exists
Lost in subsequent technique, also prevent the loss of bottom electrode 140.
Therefore, bulk accoustic wave filter device is improved so that its electrical characteristics is unaffected.
As described above, according to each embodiment, the electrical characteristics of bulk accoustic wave filter device are improved.
Although the disclosure includes specific example, will become apparent to after it understanding of present disclosure
It is that, in the case where not departing from the spirit and scope of claim and their equivalent, form can be made in these examples
Various change in upper and details.Example described herein will be considered only as descriptive sense, rather than the mesh for limitation
's.The description of feature or aspect in each example will be considered as the similar characteristics or side that are applicable in other examples
Face.If being executed in different order the technology of description, and/or if the system of description, framework, dress are combined in a different manner
Put the component in either circuit and/or be replaced with other components or their equivalent or the system of additional notes,
Component in framework, device or circuit, then it can obtain appropriate result.Therefore, the scope of the present disclosure is not by specific embodiment party
Formula limits, but is limited by claim and their equivalent, and in the range of claim and their equivalent
All changes be to be interpreted as being contained in the disclosure.
Claims (19)
1. a kind of bulk accoustic wave filter device, including：
First layer, air gap is formed together with substrate；
Bottom electrode, it is arranged on the first layer；
Piezoelectric layer, it is arranged to cover a part for the bottom electrode；
Top electrode, it is arranged on the piezoelectric layer；
Ccf layer, it is arranged on or below the Top electrode；And
Bottom electrode enhancement layer, on the part in addition to being arranged on the part except being provided with the piezoelectric layer of the bottom electrode,
Wherein, the bottom electrode enhancement layer when forming the Top electrode by making the bottom electrode enhancement layer and the Top electrode
Separate and formed or formed by separating the bottom electrode enhancement layer and the ccf layer when forming the ccf layer.
2. bulk accoustic wave filter device according to claim 1, wherein, the bottom electrode enhancement layer by with the bottom electrode
Identical material is formed, or by being formed comprising the material with the bottom electrode identical material.
3. bulk accoustic wave filter device according to claim 1, in addition to：
The second layer, formed on the first layer for covering the air gap.
4. bulk accoustic wave filter device according to claim 1, in addition to：
Third layer, it is arranged on the first layer, in addition to the part except supporting metal pad for covering the Top electrode
Part, and the bottom electrode enhancement layer is not covered.
5. bulk accoustic wave filter device according to claim 1, wherein, metal pad is formed in the bottom electrode enhancement layer
In the Top electrode or the ccf layer.
6. bulk accoustic wave filter device according to claim 1, wherein, the thickness of the bottom electrode enhancement layer corresponds to institute
State the thickness of Top electrode or the ccf layer.
7. bulk accoustic wave filter device according to claim 1, wherein, in addition to metal pad, the metal pad set
Put on the bottom electrode enhancement layer.
8. bulk accoustic wave filter device according to claim 1, wherein, the bottom electrode enhancement layer and the Top electrode are same
When formed, and
The Top electrode and the bottom electrode enhancement layer are separated from each other by patterning.
9. bulk accoustic wave filter device according to claim 1, wherein, the bottom electrode enhancement layer and the ccf layer are same
When formed, and
The ccf layer and the bottom electrode enhancement layer are separated from each other by patterning.
10. a kind of method for manufacturing bulk accoustic wave filter device, methods described include：
Superficial layer is formed, for covering bottom electrode, piezoelectric layer, ccf layer and first layer；And
The superficial layer is divided into bottom electrode enhancement layer and Top electrode by etching, and remove the superficial layer except for shape
Part outside into the part of the bottom electrode enhancement layer and the Top electrode.
11. according to the method for claim 10, wherein, the bottom electrode enhancement layer by with the bottom electrode identical material
Formed, or by being formed comprising the material with the bottom electrode identical material.
12. the method according to claim 11, in addition to：
Before the superficial layer is formed,
Sacrifice layer is formed on substrate；
The first layer is formed on the substrate and the sacrifice layer, to cover the sacrifice layer；
The second layer is formed on the first layer, and the second layer is arranged on the sacrifice layer；And
The bottom electrode is formed on the second layer so that a part for the bottom electrode is arranged on the sacrifice layer.
13. the method according to claim 11, in addition to：
After the bottom electrode is formed,
The piezoelectric layer is formed, for covering the bottom electrode, the second layer and the first layer, and the piezoelectric layer is sudden and violent
Reveal outside；
The ccf layer is formed on the piezoelectric layer；And
Remove a part for the piezoelectric layer so that a part for the bottom electrode and a part for the first layer are exposed to outside
Portion.
14. the method according to claim 11, in addition to：
After the superficial layer is divided into the bottom electrode enhancement layer and the Top electrode,
Third layer is formed, the third layer makes the bottom electrode enhancement layer and the Top electrode partially exposed to outside.
15. according to the method for claim 14, wherein, the step of forming the third layer, includes：
The third layer is formed, for covering the bottom electrode enhancement layer, the Top electrode and the first layer, and described
Three layers are exposed to outside, and
A part for the third layer is removed by etching, so that the bottom electrode enhancement layer and the Top electrode are partially exposed
To outside.
16. the method according to claim 11, in addition to：
Metal pad, and the metal are formed on the part of the exposure of the bottom electrode enhancement layer and the Top electrode
Pad is exposed to outside.
17. the method according to claim 11, in addition to：
Before the metal pad is formed, the table from the part of the exposure of the bottom electrode enhancement layer and the Top electrode
Face removes oxide material.
18. the method according to claim 11, in addition to：
After the metal pad is formed, air gap is formed by removing the sacrifice layer of formation on the substrate.
19. a kind of method for manufacturing bulk accoustic wave filter device, methods described include：
Superficial layer is formed, for covering bottom electrode, piezoelectric layer, Top electrode and first layer, wherein, the superficial layer is exposed to outer
Portion；And
The superficial layer is divided into bottom electrode enhancement layer and ccf layer by etching, and remove the superficial layer except for shape
Part outside into the part of the bottom electrode enhancement layer and the ccf layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2016-0089387 | 2016-07-14 | ||
| KR20160089387 | 2016-07-14 | ||
| KR1020160159251A KR20180008243A (en) | 2016-07-14 | 2016-11-28 | Bulk-Acoustic wave filter device and method for manufacturing the same |
| KR10-2016-0159251 | 2016-11-28 |
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| CN107623500A true CN107623500A (en) | 2018-01-23 |
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| US11437975B2 (en) | 2019-09-06 | 2022-09-06 | Samsung Electro-Mechanics Co., Ltd. | Bulk acoustic resonator and filter device |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101010875A (en) * | 2004-09-10 | 2007-08-01 | 株式会社村田制作所 | Piezoelectric thin film resonator |
| US20140159548A1 (en) * | 2011-03-29 | 2014-06-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
| US20160035960A1 (en) * | 2014-07-31 | 2016-02-04 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
| US20160163954A1 (en) * | 2014-12-08 | 2016-06-09 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
-
2016
- 2016-11-28 KR KR1020160159251A patent/KR20180008243A/en not_active Application Discontinuation
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2017
- 2017-07-12 CN CN201710564814.1A patent/CN107623500B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101010875A (en) * | 2004-09-10 | 2007-08-01 | 株式会社村田制作所 | Piezoelectric thin film resonator |
| US20140159548A1 (en) * | 2011-03-29 | 2014-06-12 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator comprising collar and acoustic reflector with temperature compensating layer |
| US20160035960A1 (en) * | 2014-07-31 | 2016-02-04 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
| US20160163954A1 (en) * | 2014-12-08 | 2016-06-09 | Samsung Electro-Mechanics Co., Ltd. | Acoustic resonator and method of manufacturing the same |
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| KR20180008243A (en) | 2018-01-24 |
| CN107623500B (en) | 2021-03-09 |
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