CN107612342A - It is a kind of to be applied to circuit of synchronous rectification in parallel - Google Patents
It is a kind of to be applied to circuit of synchronous rectification in parallel Download PDFInfo
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Abstract
The present invention relates to a kind of circuit of synchronous rectification for being applied to parallel connection, including：Transformer T1, metal-oxide-semiconductor S1~S4, electric capacity C1~C4；Transformer T1 includes primary side line bag N1, secondary line bag N2~N4；Line bag N2 both ends series capacitance C1, C2, electric capacity C1 are connected with grid of the C2 tie points respectively with metal-oxide-semiconductor S3, S4；Line bag N3 both ends series capacitance C3, C4, grid of electric capacity C3, C4 tie point respectively with metal-oxide-semiconductor S1, S2 are connected；Drain electrode of the line bag N4 both ends respectively with metal-oxide-semiconductor S1, S3 is connected；Metal-oxide-semiconductor S1~S4 source electrode is connected；Metal-oxide-semiconductor S2 drain electrode is connected with metal-oxide-semiconductor S3, S4 grid, and metal-oxide-semiconductor S4 drain electrode is connected with metal-oxide-semiconductor S1, S2 grid.During multiple circuit of synchronous rectification parallel connections, if a certain circuit breaks down, other circuits still can be normal with normal work, Parallel opertation voltage.
Description
Technical field
The present invention relates to electronic circuit field, more particularly to a kind of circuit of synchronous rectification for being applied to parallel connection.
Background technology
Most of electrical equipment is required to power using dc source, and dc source majority uses Switching Power Supply by exchanging
Electric isolution rectifying conversion is direct current.Switching Power Supply is the HF switch control that the direct current after AC rectification is passed through into switching tube
Make and export the power supply of direct current by rectification circuit after transformer isolation converts.Rectification circuit after transformer isolation conversion
Majority carries out rectification using diode, when exporting occasion in use, commutation diode can produce a large amount of losses in low-voltage, high-current,
Cause power-efficient to reduce, produce heat and reduce the reliability of power supply.
Currently used circuit of synchronous rectification is as shown in figure 1, its operation principle is：When on transformer secondary output voltage just
When bearing down, synchronous rectifier S2 conductings, transformer energy exports direct current after S2 and LC filtering；When transformer secondary exports
When just upper negative under voltage, synchronous rectifier S1 conductings, S2 shut-offs, output current pass through S1 and LC afterflows.Synchronous rectifier is led
Energization resistance can reach several milliohms, and conduction loss is less than the loss of general-purpose diode.
Traditional circuit of synchronous rectification can meet most of rectification demand individually exported.But its shortcoming is：When multiple
During the identical circuit of synchronous rectification Parallel opertation, if some circuit breaks down and protected, and other are in parallel synchronous whole
Current circuit normal work, also have voltage on bus, then the synchronous rectifier S2 of faulty circuit can constant conduction, by busbar voltage
Short circuit, cause whole power failure.
The content of the invention
In view of above-mentioned analysis, the present invention is intended to provide a kind of new circuit of synchronous rectification, solves conventional synchronization rectified current
Because the failure of a certain circuit of synchronous rectification causes all, circuit of synchronous rectification in parallel can not normal work in the case of used in parallel on road
The problem of making.
The purpose of the present invention is mainly achieved through the following technical solutions：
The invention provides a kind of circuit of synchronous rectification for being applied to parallel connection, including：Transformer T1, metal-oxide-semiconductor S1~S4, electricity
Hold C1~C4；The primary side of the transformer T1 includes line bag N1, and secondary includes line bag N2~N4；The both ends series connection of the line bag N2
There are electric capacity C1, C2, electric capacity C1 is connected with grid of the C2 tie points respectively with metal-oxide-semiconductor S3, S4；The both ends of the line bag N3 are in series with
Electric capacity C3, C4, grid of electric capacity C3, C4 tie point respectively with metal-oxide-semiconductor S1, S2 are connected；The both ends of the line bag N4 are respectively at MOS
Pipe S1, S3 drain electrode are connected；The source electrode of the metal-oxide-semiconductor S1~S4 is connected；The drain electrode of the metal-oxide-semiconductor S2 and metal-oxide-semiconductor S3, S4 grid
Extremely it is connected, metal-oxide-semiconductor S4 drain electrode is connected with metal-oxide-semiconductor S1, S2 grid.
Further, in addition to resistance R1~R4, the electric capacity C1 connect with resistance R3, and resistance R1 is connected in parallel on electric capacity C2 two
End, electric capacity C3 connect with resistance R4, and resistance R2 is connected in parallel on electric capacity C4 both ends.
Further, the primary side of the transformer T1 is connected with high-frequency switch circuit, metal-oxide-semiconductor S1 both ends and LC filter circuits
It is connected, electric capacity C both ends are connected with load in filter circuit.
Further, the line bag N4 Same Name of Ends of the transformer T1 and metal-oxide-semiconductor S1 drain electrode and the electricity of LC filter circuits
Sense L one end links together, and one end of inductance the L other end and electric capacity C links together；Transformer T1 line bag N4's is different
Name end connection metal-oxide-semiconductor S3 drain electrode.
Further, the line bag N2 of transformer Same Name of Ends is connected with electric capacity C1 one end, the electric capacity C1 other end
Be connected with resistance R3 one end, the resistance R3 other end and metal-oxide-semiconductor S3 grid, metal-oxide-semiconductor S2 drain electrode, metal-oxide-semiconductor S4 grid,
Electric capacity C2 one end, resistance R1 one end connects together.
Further, the line bag N3 of transformer Same Name of Ends and line bag N2 different name end, metal-oxide-semiconductor S2 source electrode, electricity
Hinder R2 one end, metal-oxide-semiconductor S1 source electrode, the electric capacity C other end, metal-oxide-semiconductor S3 source electrode, metal-oxide-semiconductor S4 source electrode, resistance R1 it is another
One end, the electric capacity C2 other end, electric capacity C4 one end link together.The line bag N3 of transformer different name end and the one of electric capacity C3
End is connected, and the electric capacity C3 other end is connected with resistance R4 one end, the resistance R4 other end and metal-oxide-semiconductor S2 grid, metal-oxide-semiconductor S1
Grid, metal-oxide-semiconductor S4 drain electrode, the electric capacity C4 other end, the resistance R2 other end be connected.
Further, the capacitance of the electric capacity C2 determines according to following formula：
In formula, Vgs3, Vgs4 are metal-oxide-semiconductor S3, S4 driving voltage respectively, and VT1 is primary voltage of transformer, and N1, N2 divide
It is not the transformer primary sideline bag N1 and secondary line bag N2 line bag number of turn；C1 is electric capacity C1 capacitance.
Further, the capacitance of the electric capacity C4 determines according to following formula：
In formula, Vgs1, Vgs2 are metal-oxide-semiconductor S1, S2 driving voltage respectively, and VT1 is primary voltage of transformer, and N1, N3 divide
It is not the transformer primary sideline bag N1 and secondary line bag N3 line bag number of turn；C3 is capacitor C3 capacitance.
Further, the resistance of the resistance R1 determines according to following formula：
In formula, fs be high-frequency switch circuit switching frequency, f0For close to zero direct current frequency, C2 is electric capacity C2 electric capacity
Value.
Further, the resistance of the resistance R2 determines according to following formula：
In formula, fs be high-frequency switch circuit switching frequency, f0For close to zero direct current frequency, C4 is electric capacity C4 electric capacity
Value.
The present invention has the beneficial effect that：
The present invention provides a kind of circuit of synchronous rectification for being applied to parallel connection, when multiple circuit of synchronous rectification parallel connections, such as
Some circuit of fruit breaks down and protected, and other circuit of synchronous rectification in parallel still can be with normal work, Parallel opertation bus
Output voltage is normal.Circuit form is novel, and simple in construction, cost is low, can meet the use need of most of circuit of synchronous rectification
Ask, can apply in all kinds of power-supply devices.
In the present invention, it can also be mutually combined between above-mentioned each technical scheme, to realize more preferred compositions schemes.This
Other feature and advantage of invention will illustrate in the following description, also, certain advantages can become from specification it is aobvious and
It is clear to, or is understood by implementing the present invention.The purpose of the present invention and other advantages can by write specification, right
Specifically noted structure is realized and obtained in claim and accompanying drawing.
Brief description of the drawings
Accompanying drawing is only used for showing the purpose of specific embodiment, and is not considered as limitation of the present invention, in whole accompanying drawing
In, identical reference symbol represents identical part.
Fig. 1 shows the circuit diagram of conventional synchronization rectification circuit；
Fig. 2 shows the circuit diagram suitable for circuit of synchronous rectification in parallel.
Embodiment
The preferred embodiments of the present invention are specifically described below in conjunction with the accompanying drawings, wherein, accompanying drawing forms the application part, and
It is used for the principle for explaining the present invention together with embodiments of the present invention, is not intended to limit the scope of the present invention.
The specific embodiment of the present invention, disclose a kind of circuit of synchronous rectification for being applied to parallel connection.As shown in Fig. 2
Including：Transformer T1, metal-oxide-semiconductor S1~S4, electric capacity C1~C4；The primary side of the transformer T1 includes line bag N1, and secondary includes line
Wrap N2~N4；The both ends of the line bag N2 are in series with electric capacity C1, C2, electric capacity C1 and C2 tie points grid with metal-oxide-semiconductor S3, S4 respectively
Extremely it is connected；The both ends of the line bag N3 are in series with electric capacity C3, C4, electric capacity C3, C4 tie point grid with metal-oxide-semiconductor S1, S2 respectively
It is connected；The both ends of the line bag N4 are connected respectively at metal-oxide-semiconductor S1, S3 drain electrode；The source electrode of the metal-oxide-semiconductor S1~S4 is connected；Institute
The drain electrode for stating metal-oxide-semiconductor S2 is connected with metal-oxide-semiconductor S3, S4 grid, and metal-oxide-semiconductor S4 drain electrode is connected with metal-oxide-semiconductor S1, S2 grid.Also
Including resistance R1~R4, the electric capacity C1 connects with resistance R3, and resistance R1 is connected in parallel on electric capacity C2 both ends, and electric capacity C3 and resistance R4 goes here and there
Connection, resistance R2 are connected in parallel on electric capacity C4 both ends.
More specifically, the primary side of the transformer T1 is connected with high-frequency switch circuit, metal-oxide-semiconductor S1 both ends and LC filter circuits
It is connected, electric capacity C both ends are connected with load in filter circuit.
The line bag N4 Same Name of Ends of the transformer T1 and metal-oxide-semiconductor S1 drain electrode and the inductance L of LC filter circuits one end
Link together, one end of inductance the L other end and electric capacity C links together；Transformer T1 line bag N4 different name end connection
Metal-oxide-semiconductor S3 drain electrode.
The line bag N2 of transformer Same Name of Ends is connected with electric capacity C1 one end, and the electric capacity C1 other end is with resistance R3's
One end is connected, resistance the R3 other end and metal-oxide-semiconductor S3 grid, metal-oxide-semiconductor S2 drain electrode, metal-oxide-semiconductor S4 grid, the one of electric capacity C2
End, resistance R1 one end connect together.
The line bag N3 of transformer Same Name of Ends and line bag N2 different name end, metal-oxide-semiconductor S2 source electrode, the one of resistance R2
End, metal-oxide-semiconductor S1 source electrode, the electric capacity C other end, metal-oxide-semiconductor S3 source electrode, metal-oxide-semiconductor S4 source electrode, the resistance R1 other end, electricity
Hold the C2 other end, electric capacity C4 one end links together.The line bag N3 of transformer different name end is connected with electric capacity C3 one end,
The electric capacity C3 other end is connected with resistance R4 one end, the resistance R4 other end and metal-oxide-semiconductor S2 grid, metal-oxide-semiconductor S1 grid,
Metal-oxide-semiconductor S4 drain electrode, the electric capacity C4 other end, the resistance R2 other end are connected.Above-mentioned device is realized by printed board and connected.
The metal-oxide-semiconductor S1 and metal-oxide-semiconductor S3 are used for synchronous rectification, and metal-oxide-semiconductor S1 and metal-oxide-semiconductor S3 conduction resistance values are less than 10 millis
Europe, metal-oxide-semiconductor S2 and metal-oxide-semiconductor S4 resistance value without concrete restriction.Metal-oxide-semiconductor S1, metal-oxide-semiconductor S2, metal-oxide-semiconductor S3, metal-oxide-semiconductor S4 driving electricity
Pressure should meet in 15V to 20V voltage range (driving voltage of each metal-oxide-semiconductor elects 15V as in the present embodiment), and metal-oxide-semiconductor
S1 is equal with metal-oxide-semiconductor S2 driving voltage value, metal-oxide-semiconductor S3 is equal with metal-oxide-semiconductor S4 driving voltage value.Above-mentioned metal-oxide-semiconductor can root
Triode is selected according to situation, is still used in circuit of the present invention.
The inductance L, electric capacity C choose conventional value, transformer wire bag N1, line bag N2, line bag N3, the line bag N4 number of turn
Conventional parameter can be selected according to specific needs, and (the present embodiment center line bag N1 number of turn is 10, and line bag N2, the line bag N3 number of turn are
1).The electric capacity C1, electric capacity C2, electric capacity C3 electric capacity C4 capacitance should meet in the range of 1nf to 10nf (electric capacity in the present embodiment
C1, electric capacity C3 capacitance are 3nf).
The capacitance of the electric capacity C2 determines according to following formula：
In formula, Vgs3, Vgs4 are metal-oxide-semiconductor S3, S4 driving voltage respectively, and VT1 is primary voltage of transformer, and N1, N2 divide
It is not the line bag N2 numbers of turn of transformer primary sideline bag N1 and secondary line bag；C1 is electric capacity C1 capacitance.In the present embodiment：Transformer
Original edge voltage VT1=500V, N1=10, N2=1, C1=3nf, Vgs1=Vgs2=15V, C2=7nf can be obtained.
The capacitance of the electric capacity C4 determines according to following formula：
In formula, Vgs1, Vgs2 are metal-oxide-semiconductor S1, S2 driving voltage respectively, and VT1 is primary voltage of transformer, and N1, N3 divide
It is not the transformer primary sideline bag N1 and secondary line bag N3 line bag number of turn；C3 is capacitor C3 capacitance.In the present embodiment：Transformation
Device original edge voltage VT1=500V, N1=10, N3=1, C3=3nf, Vgs1=Vgs2=15V, can obtain C4=7nf.
The resistance R3, resistance R4 resistance should be less than 20 Ω, and (resistance R3, resistance R4 resistance are elected as in the present embodiment
10Ω)。
The resistance of the resistance R1 determines according to following formula：
In formula, fs be high-frequency switch circuit switching frequency, f0For close to zero direct current frequency, C2 is electric capacity C2 electric capacity
Value.The switching frequency of high-frequency switch circuit is generally 50kHz-100kHz, fs=50kHz in the present embodiment, then the optional 5k Ω of R1.
The resistance of the resistance R2 determines according to following formula：
In formula, fs be high-frequency switch circuit switching frequency, f0For close to zero direct current frequency, C4 is electric capacity C4 electric capacity
Value.Fs=50kHz in the present embodiment, then optional 5k Ω of R2.
When circuit of synchronous rectification normal work：Transformer wire bag N2 exports according to the switching frequency fs of high-frequency switch circuit
When just lower negative on voltage, the voltage can be by electric capacity C1, and resistance R3, electric capacity C2 will be after transformer wire bag N2 voltage
Metal-oxide-semiconductor S3 and metal-oxide-semiconductor S4 provide drive signal, and metal-oxide-semiconductor S3 conductings synchronize rectification, after metal-oxide-semiconductor S4 conductings, by metal-oxide-semiconductor S1,
The metal-oxide-semiconductor S2 same source shorted of grid, makes metal-oxide-semiconductor S1, metal-oxide-semiconductor S2 driving voltage be changed into 0V, and then has made what afterflow acted on
Metal-oxide-semiconductor S1 is turned off.Transformer secondary line bag N3, should according to lower timing is born on the switching frequency fs output voltages of high-frequency switch circuit
Voltage will can be metal-oxide-semiconductor S1 and metal-oxide-semiconductor S2 after transformer wire bag N3 voltage by electric capacity C3, resistance R4, electric capacity C4
Drive signal is provided, metal-oxide-semiconductor S1 conductings synchronize afterflow, after metal-oxide-semiconductor S2 conductings, by metal-oxide-semiconductor S3, metal-oxide-semiconductor S4 grid
Same source shorted, metal-oxide-semiconductor S3, metal-oxide-semiconductor S4 driving voltage is changed into 0V, and then turn off the metal-oxide-semiconductor S3 of rectified action.
When multiple circuit of synchronous rectification parallel connections, such as some fault is simultaneously protected, and other synchronizations in parallel are whole
Current circuit normal work, voltage is also had on Parallel opertation bus, due to the transformer T1 of the faulty circuit line bag N2, line bag
N3 and electric capacity C1, electric capacity C3 isolated DC effect, then transformer wire bag N2, line bag N3 output voltage are 0V, electric capacity C1, electricity
It is 0V to hold C2, electric capacity C3, electric capacity C4 voltages, i.e. metal-oxide-semiconductor S1, metal-oxide-semiconductor S3 driving voltage are 0V, will not trigger the failure
Metal-oxide-semiconductor S1 and metal-oxide-semiconductor the S3 conducting of circuit, avoid the short circuit of output-parallel bus, other normal parallel circuits still may be used also
With normal work, it is ensured that Parallel opertation bus output voltage is normal.
In summary, it is applied to circuit of synchronous rectification in parallel the embodiments of the invention provide a kind of.Ensure to be somebody's turn to do when multiple
During circuit of synchronous rectification parallel connection, if some circuit breaks down and protected, other circuit of synchronous rectification in parallel still can be with
Normal work, Parallel opertation bus output voltage are normal.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art the invention discloses technical scope in, the change or replacement that can readily occur in,
It should all be included within the scope of the present invention.
Claims (10)
1. a kind of be applied to circuit of synchronous rectification in parallel, it is characterised in that including：Transformer T1, metal-oxide-semiconductor S1~S4, electric capacity
C1~C4；The primary side of the transformer T1 includes line bag N1, and secondary includes line bag N2~N4；The both ends of the line bag N2 are in series with
Electric capacity C1, C2, electric capacity C1 are connected with grid of the C2 tie points respectively with metal-oxide-semiconductor S3, S4；The both ends of the line bag N3 are in series with electricity
Hold C3, C4, grid of electric capacity C3, C4 tie point respectively with metal-oxide-semiconductor S1, S2 is connected；The both ends of the line bag N4 respectively with metal-oxide-semiconductor
S1, S3 drain electrode are connected；The source electrode of the metal-oxide-semiconductor S1~S4 is connected；The drain electrode of the metal-oxide-semiconductor S2 and metal-oxide-semiconductor S3, S4 grid
It is connected, metal-oxide-semiconductor S4 drain electrode is connected with metal-oxide-semiconductor S1, S2 grid.
2. according to claim 1 be applied to circuit of synchronous rectification in parallel, it is characterised in that also including resistance R1~
R4, the electric capacity C1 connect with resistance R3, and resistance R1 is connected in parallel on electric capacity C2 both ends, and electric capacity C3 connects with resistance R4, and resistance R2 is simultaneously
It is associated in electric capacity C4 both ends.
3. according to claim 2 be applied to circuit of synchronous rectification in parallel, it is characterised in that the original of the transformer T1
Side is connected with high-frequency switch circuit, and metal-oxide-semiconductor S1 both ends are connected with LC filter circuits, electric capacity C both ends and load in filter circuit
It is connected.
4. according to claim 3 be applied to circuit of synchronous rectification in parallel, it is characterised in that the line of the transformer T1
Wrap N4 Same Name of Ends and one end of metal-oxide-semiconductor S1 drain electrode and the inductance L of LC filter circuits links together, the inductance L other end
Linked together with electric capacity C one end；Transformer T1 line bag N4 different name end connection metal-oxide-semiconductor S3 drain electrode.
5. according to claim 4 be applied to circuit of synchronous rectification in parallel, it is characterised in that the line bag of the transformer
N2 Same Name of Ends is connected with electric capacity C1 one end, and the electric capacity C1 other end is connected with resistance R3 one end, the resistance R3 other end
Grid, metal-oxide-semiconductor S2 drain electrode, metal-oxide-semiconductor S4 grid with metal-oxide-semiconductor S3, electric capacity C2 one end, resistance R1 one end are connected in one
Rise.
6. according to claim 5 be applied to circuit of synchronous rectification in parallel, it is characterised in that the line bag of the transformer
N3 Same Name of Ends and line bag N2 different name end, metal-oxide-semiconductor S2 source electrode, resistance R2 one end, metal-oxide-semiconductor S1 source electrode, electric capacity C it is another
One end, metal-oxide-semiconductor S3 source electrode, metal-oxide-semiconductor S4 source electrode, the resistance R1 other end, the electric capacity C2 other end, electric capacity C4 one end connect
It is connected together；The line bag N3 of transformer different name end is connected with electric capacity C3 one end, the electric capacity C3 other end and the one of resistance R4
End is connected, the resistance R4 other end and metal-oxide-semiconductor S2 grid, metal-oxide-semiconductor S1 grid, metal-oxide-semiconductor S4 drain electrode, electric capacity C4 it is another
End, the resistance R2 other end are connected.
7. it is applied to circuit of synchronous rectification in parallel according to one of claim 1 to 6, it is characterised in that the electric capacity
C2 capacitance determines according to following formula：
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In formula, Vgs3, Vgs4 are metal-oxide-semiconductor S3, S4 driving voltage respectively, and VT1 is primary voltage of transformer, and N1, N2 are respectively
Wrap the N1 and secondary line bag N2 line bag number of turn in transformer primary sideline；C1 is electric capacity C1 capacitance.
8. it is applied to circuit of synchronous rectification in parallel according to one of claim 1 to 6, it is characterised in that the electric capacity
C4 capacitance determines according to following formula：
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In formula, Vgs1, Vgs2 are metal-oxide-semiconductor S1, S2 driving voltage respectively, and VT1 is primary voltage of transformer, and N1, N3 are respectively
Wrap the N1 and secondary line bag N3 line bag number of turn in transformer primary sideline；C3 is capacitor C3 capacitance.
9. it is applied to circuit of synchronous rectification in parallel according to one of claim 2 to 6, it is characterised in that the resistance
R1 resistance determines according to following formula：
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In formula, fs be high-frequency switch circuit switching frequency, f0For close to zero direct current frequency, C2 is electric capacity C2 capacitance.
10. it is applied to circuit of synchronous rectification in parallel according to one of claim 2 to 6, it is characterised in that the resistance
R2 resistance determines according to following formula：
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In formula, fs be high-frequency switch circuit switching frequency, f0For close to zero direct current frequency, C4 is electric capacity C4 capacitance.
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Application publication date: 20180119 |