CN107611272A - A kind of new light emitting diode with quantum dots and preparation method thereof - Google Patents
A kind of new light emitting diode with quantum dots and preparation method thereof Download PDFInfo
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- CN107611272A CN107611272A CN201710736124.XA CN201710736124A CN107611272A CN 107611272 A CN107611272 A CN 107611272A CN 201710736124 A CN201710736124 A CN 201710736124A CN 107611272 A CN107611272 A CN 107611272A
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Abstract
The present invention is applied to light emitting diode with quantum dots, there is provided a kind of light emitting diode with quantum dots and preparation method thereof.The light emitting diode with quantum dots, including substrate, first electrode layer, the first charge transport layer, quantum dot light emitting layer, the second charge transport layer, the second electrode lay being disposed adjacent successively from the bottom up.It is characterized in that, charge transport layer and quantum dot light emitting layer in the light emitting diode with quantum dots are no longer planarization packing structures, and the nano concavo-convex structure of cycle or quasi periodic arrangement is the introduction of, and its refractive index changes in gradient along light exit direction, realizes light extraction function.The present invention effectively raises the external quantum efficiency of light emitting diode with quantum dots.
Description
Technical field
The invention belongs to light emitting diode with quantum dots field, more particularly to a kind of new light emitting diode with quantum dots and its system
Preparation Method.
Background technology
Light emitting diode with quantum dots is the electroluminescent device based on semiconductor-quantum-point material, have luminous efficiency it is high,
Excitation is high, glow color is simply adjustable, and extensive the advantages that preparing simply can be achieved in preparation technology.In recent years, quantum
Point luminescent diode and quanta point material have obtained extensive concern, light emitting diode with quantum dots be described as after LED, OLED it
Display Technique of future generation afterwards.
Quantum efficiency is to weigh the important parameter of electroluminescent device.The quantum efficiency of light emitting diode with quantum dots can divide
For external quantum efficiency（EQE）With internal quantum efficiency (IQE), and external quantum efficiency is to depend on internal quantum efficiency and light extraction efficiency
Product.Nowadays, with the continuous research of quanta point material and light emitting diode with quantum dots, the interior amount of light emitting diode with quantum dots
Sub- efficiency already close to 100%, yet between each functional layer, between each functional layer/glass substrate, glass substrate/air it
Between refractive index difference be present, cause inner full-reflection phenomenon occurs, the external quantum efficiency of light emitting diode with quantum dots can only achieve
20% or so, thus greatly limit the practical application of light emitting diode with quantum dots.In order to further improve the pole of quantum dot light emitting two
The external quantum efficiency of pipe, an effective method are to improve its light extraction efficiency.
The content of the invention
Based on this, it is an object of the invention to provide a kind of new light emitting diode with quantum dots and preparation method thereof, effectively
Raising its light extraction efficiency, and then improve external quantum efficiency.
To achieve these goals, technical scheme is as follows：A kind of new light emitting diode with quantum dots, wherein wrapping
Include：Substrate, first electrode layer over the substrate is set, the first charge transport layer being arranged in the first electrode layer,
The quantum dot light emitting layer being arranged on first charge transport layer, it is arranged on the second electric charge transmission of the quantum dot light emitting layer
Layer, sets the second electrode lay on the electron transport layer, it is characterised in that described the first charge transport layer, quantum dot
Luminescent layer, the second charge transport layer are in nano concavo-convex structure on a surface.
Further, the nano concavo-convex structure arranges in cycle or quasi periodic, and its refractive index is along light exit direction
Change in gradient.
Further, the nano concavo-convex structural cycle scope is not more than 400nm, and the nano concavo-convex physical dimension is little
In 1000nm, preferably not greater than 800nm, the nano concavo-convex structural thickness is not more than functional layer thickness.
Further, for just putting type light emitting diode with quantum dots, first charge transport layer is hole transmission layer, institute
It is electron transfer layer to state the second charge transport layer；For inversion type light emitting diode with quantum dots, first charge transport layer is
Electron transfer layer, second charge transport layer are hole transmission layer.
Further, a kind of light emitting diode with quantum dots preparation method as described above, comprises the following steps：
S1, prepare a substrate；
S2, first electrode layer is made over the substrate；
S3, first charge transport layer, quantum dot light emitting layer, the transmission of the second electric charge are sequentially depositing in the first electrode layer
Layer；
S4, the second electrode lay is made on second charge transport layer；
S5, complete the making of light emitting diode with quantum dots.
Further, the step S2 is specifically included：
S21, thermal imprint process processing is carried out to the one side of first charge transport layer, forms nano concavo-convex structure, described in it
The one side of first charge transport layer is the contact surface of the first charge transport layer and quantum dot light emitting layer.
S22, thermal imprint process processing is carried out to the one side of the quantum dot light emitting layer, forms nano concavo-convex structure, its institute
The one side for stating quantum dot light emitting layer is quantum dot light emitting layer and the contact surface of the second charge transport layer.
S23, thermal imprint process processing is carried out to the one side of second charge transport layer, forms nano concavo-convex structure, its
The one side of second charge transport layer is the contact surface of the second charge transport layer and the second electrode lay.
Further, the thermal imprint process specifically includes：
A1, using any one technique in Laser Processing or hydatogenesis or wet etching or plasma etching to flexible material
Material is handled, and forms the nano concavo-convex structure of cycle or quasi periodic arrangement；
B2, using the nano concavo-convex structure of flexible material to first charge transport layer or quantum dot light emitting in heating
Layer or the second charge transport layer are imprinted, and obtain cycle or quasi periodic arrangement and its refractive index becomes in gradient along exit direction
The nano concavo-convex structure of change.
Further, first charge transport layer, quantum dot light emitting layer, the second charge transport layer are formed in step S3
Method is any one technique in spin coating or printing or inkjet printing.
Further, the part of the quantum dot light emitting layer is penetrated into the nano concavo-convex knot of first charge transport layer
Structure, form the complementary structure with the nano concavo-convex structure of first charge transport layer so that in the first charge transport layer and amount
Light extraction function is realized at the interface of son point luminescent layer.
Apply the technical scheme of the present invention, the nano concavo-convex structure arranged using the cycle of setting or quasi periodic, and its
Refractive index changes in gradient along light exit direction so that the light between each functional layer can smoothly reflect along concaveconvex structure
Come, effectively raise light extraction efficiency, and then improve the external quantum efficiency of light emitting diode with quantum dots.
Brief description of the drawings
Fig. 1 is the structural representation for the light emitting diode with quantum dots that prior art provides.
Fig. 2 is the optical loss physical model figure for the light emitting diode with quantum dots that prior art provides.
Fig. 3 is the structural representation of the light emitting diode with quantum dots in specific implementation method of the present invention.
Fig. 4 is the optical loss physical model figure of the sub- point luminescent diode in specific implementation method of the present invention.
Embodiment
It is described in further detail by the following examples, but the present embodiment is not intended to limit the invention, every use
The similar structure of the present invention and its similar change, all should be included in protection scope of the present invention.
With reference to Fig. 3,4, a kind of light emitting diode with quantum dots structure, including：Substrate 10, first over the substrate is set
Electrode layer 20, the first charge transport layer 30 being arranged in the first electrode layer, is arranged on first charge transport layer
Quantum dot light emitting layer 40, the second charge transport layer 50 being arranged on quantum dot light emitting layer, be arranged on the second charge transport layer
On the second electrode lay 60, it is characterised in that described the first charge transport layer 20, quantum dot light emitting layer 30, the second electric charge pass
Defeated layer 40 is in cycle or quasi periodic nano concavo-convex structure on a surface, and its refractive index changes in gradient along light exit direction.
It should be noted that in the embodiment of the present invention, exemplified by just putting type light emitting diode with quantum dots, i.e. the first electric charge passes
Defeated layer 30 is hole transmission layer, and the second charge transport layer 50 is electron transfer layer.
, can be according to being actually needed in above-mentioned quantum dot light emitting in order to improve the mobility of electric charge in the embodiment of the present invention
Hole injection layer, at least one layer of electron injecting layer are set in diode structure.
Specifically, substrate 10 make successively first electrode layer 20, hole transport layer by layer 30, quantum dot light emitting layer 40, electricity
Sub- transport layer 50, the second electrode lay 60, the light emitting diode with quantum dots shaped.Further, the substrate 10 is transparent
Simple glass or quartz glass；The first electrode layer 20 is ITO or IZO;Hole transmission layer 30 can be poly-
TPD, PVK, CPB or other well known materials, and spin coating, printing or inkjet printing methods can be used to make；The quantum dot hair
Photosphere 40 is core-shell quanta dots luminescent material, can be CdSe/ZnSe, CdS/ZnS II-IV race's quantum dot or
InP, PbS/ZnS III-V race's quantum dot；The electron transfer layer 50 is ZnO, TiO2Or other well known materials, and can adopt
Made of spin coating, printing or inkjet printing methods；The second electrode lay 60 is the Ag or Al of thermal evaporation deposition.
Further, thermal imprint process processing is carried out to the one side of the hole transmission layer 30, forms nano concavo-convex structure,
The one side of its hole transmission layer is the contact surface of hole transmission layer and quantum dot light emitting layer 40.
Further, thermal imprint process processing is carried out to the one side of the quantum dot light emitting layer 40, forms nano concavo-convex knot
Structure, the one side of its quantum dot light emitting layer 40 are the contact surface of the charge transport layer 50 of quantum dot light emitting layer 40 and second.
Further, thermal imprint process processing is carried out to the one side of second charge transport layer 50, forms nano concavo-convex
Structure, the one side of its second charge transport layer 50 is the second charge transport layer 50 and the contact surface of the second electrode lay 60.
Further, the part of the quantum dot light emitting layer 50 is penetrated into the nano concavo-convex knot of the hole transmission layer 30
Structure, form the complementary structure with the nano concavo-convex structure of the hole transmission layer 30 so that in hole transmission layer 30 and quantum dot
Light extraction function is realized at the interface of luminescent layer 40.
Further, the thermal imprint process specifically includes：
A1, using any one technique in Laser Processing or hydatogenesis or wet etching or plasma etching to flexible material
Material is handled, and forms the nano concavo-convex structure of cycle or quasi periodic arrangement；
B2, using the nano concavo-convex structure of flexible material to the hole transmission layer 30 or quantum dot light emitting layer in heating
40 or electron transfer layer imprinted, obtain cycle or paracycle
Property the arrangement and nano concavo-convex structure that changes in gradient along exit direction of its refractive index.
Claims (9)
1. a kind of new light emitting diode with quantum dots, including：Substrate, first electrode layer over the substrate is set, is arranged on
The first charge transport layer in the first electrode layer, the quantum dot light emitting layer being arranged on first charge transport layer, if
The second charge transport layer in the quantum dot light emitting layer is put, the second electrode lay on the electron transport layer is set, it is special
Sign is that the first described charge transport layer, quantum dot light emitting layer, the second charge transport layer are in nano concavo-convex knot on a surface
Structure.
2. a kind of new light emitting diode with quantum dots according to claim 1, it is characterised in that the nano concavo-convex structure is in
Cycle or quasi periodic arrangement, and its refractive index changes in gradient along light exit direction.
3. according to a kind of new light emitting diode with quantum dots of claim 1, it is characterised in that the nano concavo-convex structural cycle model
Enclose and be not more than 400nm, the nano concavo-convex physical dimension is not more than 1000nm, preferably not greater than 800nm, the nano concavo-convex
Structural thickness is not more than functional layer thickness.
4. a kind of new light emitting diode with quantum dots according to claim 1, it is characterised in that for just putting type quantum dot hair
Optical diode, first charge transport layer are hole transmission layer, and second charge transport layer is electron transfer layer；For falling
Type light emitting diode with quantum dots is put, first charge transport layer is electron transfer layer, and second charge transport layer is
Hole transmission layer.
5. a kind of light emitting diode with quantum dots preparation method according to claim 1, it is characterised in that including following step
Suddenly：
S1, prepare a substrate；
S2, first electrode layer is made over the substrate；
S3, first charge transport layer, quantum dot light emitting layer, the transmission of the second electric charge are sequentially depositing in the first electrode layer
Layer；
S4, the second electrode lay is made on second charge transport layer；
S5, complete the making of light emitting diode with quantum dots.
6. light emitting diode with quantum dots preparation method according to claim 5, it is characterised in that the step S2 is specifically wrapped
Include：
S21, thermal imprint process processing is carried out to the one side of first charge transport layer, forms nano concavo-convex structure, described in it
The one side of first charge transport layer is the contact surface of the first charge transport layer and quantum dot light emitting layer；
S22, thermal imprint process processing is carried out to the one side of the quantum dot light emitting layer, forms nano concavo-convex structure, its described amount
The one side of son point luminescent layer is quantum dot light emitting layer and the contact surface of the second charge transport layer；
S23, thermal imprint process processing is carried out to the one side of second charge transport layer, forms nano concavo-convex structure, described in it
The one side of second charge transport layer is the contact surface of the second charge transport layer and the second electrode lay.
7. light emitting diode with quantum dots preparation method according to claim 5, it is characterised in that the thermal imprint process is specific
Including：
A1, using any one technique in Laser Processing or hydatogenesis or wet etching or plasma etching to flexible material
Material is handled, and forms the nano concavo-convex structure of cycle or quasi periodic arrangement；
B2, using the nano concavo-convex structure of flexible material to first charge transport layer or quantum dot light emitting in heating
Layer or the second charge transport layer are imprinted, and obtain cycle or quasi periodic arrangement and its refractive index becomes in gradient along exit direction
The nano concavo-convex structure of change.
8. light emitting diode with quantum dots preparation method according to claim 5, it is characterised in that described is formed in step S3
One charge transport layer, quantum dot light emitting layer, the method for the second charge transport layer are any in spin coating or printing or inkjet printing
A kind of technique.
9. light emitting diode with quantum dots preparation method according to claim 5, it is characterised in that the quantum dot light emitting layer
Part is penetrated into the nano concavo-convex structure of first charge transport layer, forms the nano concavo-convex with first charge transport layer
The complementary structure of structure so that light extraction function is realized at the interface of the first charge transport layer and quantum dot light emitting layer.
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| CN109119450A (en) * | 2018-08-31 | 2019-01-01 | 京东方科技集团股份有限公司 | Display base plate and preparation method thereof, display panel, display device |
| WO2021088139A1 (en) * | 2019-11-06 | 2021-05-14 | 深圳市华星光电半导体显示技术有限公司 | Display apparatus and method for manufacturing display apparatus |
| CN113871542A (en) * | 2020-06-30 | 2021-12-31 | 京东方科技集团股份有限公司 | Light emitting diode device, preparation method thereof and display panel |
| WO2022252124A1 (en) * | 2021-06-01 | 2022-12-08 | 京东方科技集团股份有限公司 | Electron transport layer material and manufacturing method therefor, electroluminescent device and manufacturing method therefor, and display apparatus |
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Application publication date: 20180119 |