CN107607997A - A kind of anti-overshoot transient electromagnetic emitter - Google Patents
A kind of anti-overshoot transient electromagnetic emitter Download PDFInfo
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- CN107607997A CN107607997A CN201710878086.1A CN201710878086A CN107607997A CN 107607997 A CN107607997 A CN 107607997A CN 201710878086 A CN201710878086 A CN 201710878086A CN 107607997 A CN107607997 A CN 107607997A
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- insulated gate
- bipolar transistor
- overshoot
- gate bipolar
- diode
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Abstract
The invention discloses a kind of anti-overshoot transient electromagnetic emitter,Including emission control module,Central processing unit,IGBT drive module,Anti- overshoot H bridges and transmitting coil,Anti- overshoot H bridges include A arms,B arms,Tie point and the second branch road,A arms are made up of IGBT1 and IGBT4,Control signal is A,B arms are made up of IGBT2 and IGBT3,Control signal is B,Tie point,Second branch road and transmitting coil are in parallel,Tie point includes the diode D1 and IGBT5 of series connection,IGBT5 control signals are that A is non-,Second branch road includes the diode D2 and IGBT6 of series connection,IGBT6 control signals are that B is non-,Diode D1 is opposite with D2 conducting direction and in IGBT2,IGBT3,In the case that IGBT5 is simultaneously turned on,Diode D1 is in cut-off state.The anti-overshoot transient electromagnetic emitter overcomes the shortcomings that original transient electromagnetic emitter by transmitting coil is influenceed that overshoot phenomenon can be produced.
Description
Technical field
The present invention relates to transient electromagnetic emitter, specifically provides a kind of anti-overshoot transient electromagnetic emitter.
Background technology
Vast in territory, rich in mineral resources that vast territory and abundant resources in China, with flourishing for China's economy, to mineral resources
Demand gradually increases.Because transient electromagnetic method has, resolution capability is strong, investigation depth is big and high efficient construction, makes its quilt
It is widely used in prospecting mineral products, groundwater exploration and colliery leak prospecting etc..
Transient electromagnetic method is to produce Primary field to wire frame input pulse electric current using emitter, then is observed by receiver
The method in initial magnetic field caused secondary vortex flow magnetic field in underground medium.The ideal waveform of the emission current of emitter is standard
Square-wave signal, electric current the trailing edge moment produce Primary field, because the wire frame of emitter is made up of multiturn coil, its
Electric current in inductance can not be mutated, and during road is changed, can cause long emission current turn-off time, later stage length vibration and overshoot
Phenomena such as, therefore the current waveform in actually measuring not is the square wave of standard, and the cut-off current of emission current will no longer line
Property decline, the quality of the output current of emitter can be produced serious influence, and then influence first magnetic field, the measurement to data
It is very unfavorable.
Therefore, a kind of anti-overshoot transient electromagnetic emitter is developed, turns into people's urgent problem to be solved.
The content of the invention
In consideration of it, it is an object of the invention to provide a kind of anti-overshoot transient electromagnetic emitter, to solve existing transition
The problem of electromagnetic launch system can be produced overshoot phenomenon by inductive load coil influences.
The invention provides a kind of anti-overshoot transient electromagnetic emitter, including：The emission control module that is sequentially connected, in
Central processor, IGBT drive module, anti-overshoot H bridges and transmitting coil, the anti-overshoot H bridges include A arms, B arms, first
Road and the second branch road, A arms are made up of insulated gate bipolar transistor IGBT 1 and insulated gate bipolar transistor IGBT 4, control letter
Number it is A, B arms are made up of insulated gate bipolar transistor IGBT 2 and insulated gate bipolar transistor IGBT 3, control signal B,
Tie point, the second branch road and transmitting coil are in parallel, and tie point includes the diode D1 and insulated gate bipolar crystal of series connection
Pipe IGBT5, the control signal of insulated gate bipolar transistor IGBT 5 are that A is non-, and the second branch road includes diode D2 and the insulation of series connection
Grid bipolar transistor IGBT 6, the control signal of insulated gate bipolar transistor IGBT 6 are that B is non-, diode D1 and D2 conducting side
To conversely and in insulated gate bipolar transistor IGBT 2, insulated gate bipolar transistor IGBT 3, insulated gate bipolar transistor
In the case that IGBT5 is simultaneously turned on, diode D1 is in cut-off state.
Anti- overshoot transient electromagnetic emitter provided by the invention, by being improved to common H bridge arrangements, formed
Anti- overshoot H bridges, i.e.,：On the basis of common H bridges, the branch road of two IGBT and Diode series is with the addition of again, wherein,
Two branch roads are in parallel with transmitting coil, and IGBT drive module to H bridge turn-on sequences during switching over, two branch
Road can make the energy in transmitting coil obtain quick release, the influence before waveform Bu Shouhuan roads behind Shi Huan roads, effectively change
Current over pulse after the vibration and shut-off in kind emission current later stage, make the emission current ripple of the anti-overshoot transient electromagnetic emitter
Shape is controlled effectively.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the present invention is further detailed explanation：
Fig. 1 is the structural representation of anti-overshoot transient electromagnetic emitter；
Fig. 2 is the circuit diagram of anti-overshoot H bridges；
Fig. 3 is that anti-overshoot H bridges MATLAB emulates schematic diagram；
Fig. 4 is the simulation result schematic diagram of conventional H bridge；
Fig. 5 is the simulation result schematic diagram of the present invention.
Embodiment
The present invention is further explained below in conjunction with specific embodiment, but the not limitation present invention.
As shown in figure 1, the invention provides a kind of anti-overshoot transient electromagnetic emitter, including：The transmitting being sequentially connected
Control module, central processing unit, IGBT drive module, anti-overshoot H bridges and transmitting coil, as shown in Figure 2 and Figure 3, the anti-mistake
Rushing H bridges includes A arms, B arms, tie point and the second branch road, and A arms are double by insulated gate bipolar transistor IGBT 1 and insulated gate
Bipolar transistor IGBT4 is formed, and control signal A, B arm is brilliant by insulated gate bipolar transistor IGBT 2 and insulated gate bipolar
Body pipe IGBT3 is formed, control signal B, and tie point, the second branch road and transmitting coil are in parallel, and tie point includes series connection
Diode D1 and insulated gate bipolar transistor IGBT 5, the control signal of insulated gate bipolar transistor IGBT 5 are that A is non-, second
Road includes the diode D2 and insulated gate bipolar transistor IGBT 6 of series connection, the control letter of insulated gate bipolar transistor IGBT 6
Number non-for B, diode D1 and D2 conducting direction is on the contrary, brilliant in insulated gate bipolar transistor IGBT 2, insulated gate bipolar
In the case that body pipe IGBT3, insulated gate bipolar transistor IGBT 5 simultaneously turn on, diode D1 is in cut-off state；Insulating
Grid bipolar transistor IGBT 1, insulated gate bipolar transistor IGBT 4, insulated gate bipolar transistor IGBT 6 simultaneously turn on
In the case of, diode D2 is in cut-off state.
The course of work of the anti-overshoot transient electromagnetic emitter is as follows：
1), emission control module arrange parameter and send to central processing unit；
2) after, central processing unit receives the parameter, corresponding control signal is sent to IGBT drive module；
3) after, IGBT drive module receives the control signal, the drive signal of anti-overshoot H bridges is produced, it is anti-to control
The conducting and shut-off of H bridges are overshooted, transmitting coil is produced the transmission signal of corresponding frequencies and dutycycle, wherein, anti-
During overshoot H bridges change road, tie point and the second branch road can make the energy in transmitting coil obtain quick release, make
The influence changed before the waveform Bu Shouhuan roads behind road, the current over pulse after the effective vibration and shut-off for improving the emission current later stage,
The emission current waveform of the anti-overshoot transient electromagnetic emitter is set to be controlled effectively.
Wherein, using pulse transmitter A and B pulse signal transmit cycle as：A is Continuity signal, B be cut-off signals->
A, B be cut-off signals->A is cut-off signals, B be Continuity signal->A, exemplified by B is cut-off signals, such as the anti-overshoot H bridges of Fig. 3
Shown in the MATLAB emulation schematic diagrames on road, the implementation process of anti-overshoot function is as follows：When trigger signal A is Continuity signal, B is pass
During break signal, IGBT1, IGBT4, IGBT6 conducting, IGBT2 and IGBT3, IGBT5 are turned off, because IGBT5 shut-offs make diode
Branch road where D1 is not turned on, and is not turned on branch road where it because diode D2 left ends voltage is higher than right-hand member voltage, current path
For IGBT1->Transmitting coil->IGBT4, the sense of current is from left to right in transmitting coil；When trigger signal A and B are shut-off
During signal, IGBT5 and IGBT6 conductings, IGBT1, IGBT2, IGBT3, IGBT4 are turned off, and the sense of current can not dash forward in transmitting coil
Become, for from left to right, it is IGBT6- now to form current path>D2->Transmitting coil, make the fast quick-release of the energy in transmitting coil
Put；When trigger signal A is cut-off signals, B is Continuity signal, IGBT2, IGBT3, IGBT5 conducting, IGBT1, IGBT4,
IGBT6 is turned off, because IGBT6 shut-offs are not turned on branch road where diode D2, because diode D1 right-hand members voltage is higher than left end
Voltage is not turned on branch road where it, current path IGBT2->Transmitting coil->IGBT3, the sense of current in transmitting coil
For from right to left；When trigger signal A and B are cut-off signals, IGBT5 and IGBT6 conducting, IGBT1, IGBT2, IGBT3,
IGBT4 is turned off, and the sense of current can not be mutated in transmitting coil, for from right to left, it is IGBT5- now to form current path>D1->
Transmitting coil, make the energy quick release in transmitting coil.
Fig. 4 is the simulation result schematic diagram of conventional H bridge, and Fig. 5 is Fig. 3 simulation result schematic diagram, can be clear from figure
Find out to Chu, shaking for emission current later stage can effectively be improved by anti-overshoot transient electromagnetic emitter provided by the invention
Current over pulse after swinging and turning off, the emission current waveform of the anti-overshoot transient electromagnetic emitter is set to be controlled effectively.
Embodiments of the present invention are elaborated above in conjunction with accompanying drawing, but the present invention is not limited to above-mentioned implementation
Mode, can also be on the premise of present inventive concept not be departed from those of ordinary skill in the art's possessed knowledge
Make a variety of changes.
Claims (1)
1. a kind of anti-overshoot transient electromagnetic emitter, including the emission control module that is sequentially connected, central processing unit, IGBT are driven
Dynamic model block, anti-overshoot H bridges and transmitting coil, it is characterised in that：The anti-overshoot H bridges include A arms, B arms, tie point and
Second branch road, A arms are made up of insulated gate bipolar transistor IGBT 1 and insulated gate bipolar transistor IGBT 4, and control signal is
A, B arm are made up of insulated gate bipolar transistor IGBT 2 and insulated gate bipolar transistor IGBT 3, control signal B, and first
Branch road, the second branch road and transmitting coil are in parallel, and tie point includes the diode D1 and insulated gate bipolar transistor of series connection
IGBT5, the control signal of insulated gate bipolar transistor IGBT 5 are that A is non-, and the second branch road includes the diode D2 and insulated gate of series connection
Bipolar transistor IGBT 6, the control signal of insulated gate bipolar transistor IGBT 6 are that B is non-, diode D1 and D2 conducting direction
Conversely and in insulated gate bipolar transistor IGBT 2, insulated gate bipolar transistor IGBT 3, insulated gate bipolar transistor
In the case that IGBT5 is simultaneously turned on, diode D1 is in cut-off state.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710878086.1A CN107607997A (en) | 2017-09-26 | 2017-09-26 | A kind of anti-overshoot transient electromagnetic emitter |
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| CN201710878086.1A CN107607997A (en) | 2017-09-26 | 2017-09-26 | A kind of anti-overshoot transient electromagnetic emitter |
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Citations (7)
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| CN101413983A (en) * | 2008-12-04 | 2009-04-22 | 吉林大学 | IGBT bridge circuit and drive protective circuit detection device |
| US20100102822A1 (en) * | 2007-01-03 | 2010-04-29 | Tadepalli Rammohan Prasad | Process and device for measurement of spectral induced polarization response using pseudo random binary sequence (prbs) current source |
| CN104407391A (en) * | 2014-12-05 | 2015-03-11 | 吉林大学 | Magnetic source non-modulation type transmitter and control method thereof |
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| CN105279339A (en) * | 2015-11-10 | 2016-01-27 | 中国科学院电工研究所 | Insulated gate bipolar transistor (IGBT) model for electromagnetic interference simulation analysis |
| CN105717544A (en) * | 2016-04-26 | 2016-06-29 | 吉林大学 | Transient electromagnetic emitting-receiving system for real-time acquisition-storage and data mapping explanation |
| CN107017610A (en) * | 2017-05-11 | 2017-08-04 | 中国地质大学（武汉） | A kind of passive constant pressure clamper of Transient Electromagnetic Transmitter rapidly switches off circuit |
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2017
- 2017-09-26 CN CN201710878086.1A patent/CN107607997A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100102822A1 (en) * | 2007-01-03 | 2010-04-29 | Tadepalli Rammohan Prasad | Process and device for measurement of spectral induced polarization response using pseudo random binary sequence (prbs) current source |
| CN101413983A (en) * | 2008-12-04 | 2009-04-22 | 吉林大学 | IGBT bridge circuit and drive protective circuit detection device |
| CN104407391A (en) * | 2014-12-05 | 2015-03-11 | 吉林大学 | Magnetic source non-modulation type transmitter and control method thereof |
| CN204925412U (en) * | 2015-09-14 | 2015-12-30 | 吉林大学 | Superconductive transition electromagnetic emission of low temperature machine based on RC and many C cascade |
| CN105279339A (en) * | 2015-11-10 | 2016-01-27 | 中国科学院电工研究所 | Insulated gate bipolar transistor (IGBT) model for electromagnetic interference simulation analysis |
| CN105717544A (en) * | 2016-04-26 | 2016-06-29 | 吉林大学 | Transient electromagnetic emitting-receiving system for real-time acquisition-storage and data mapping explanation |
| CN107017610A (en) * | 2017-05-11 | 2017-08-04 | 中国地质大学（武汉） | A kind of passive constant pressure clamper of Transient Electromagnetic Transmitter rapidly switches off circuit |
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Application publication date: 20180119 |
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