CN107592003A - A kind of three-level converter midpoint static state clamper equalizer circuit - Google Patents
A kind of three-level converter midpoint static state clamper equalizer circuit Download PDFInfo
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- CN107592003A CN107592003A CN201710936236.XA CN201710936236A CN107592003A CN 107592003 A CN107592003 A CN 107592003A CN 201710936236 A CN201710936236 A CN 201710936236A CN 107592003 A CN107592003 A CN 107592003A
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- 230000003068 static effect Effects 0.000 title claims abstract description 14
- 238000011084 recovery Methods 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
The invention discloses a kind of three-level converter midpoint static state clamper equalizer circuit, it includes four transistor stack structures, wherein, the first transistor and second transistor junction are set to node A, second transistor and third transistor junction are set to node C and are used as voltage output end, third transistor and the 4th transistor junction are set to node B, DC voltage DC+ and DC voltage DC are connected respectively at the both ends of four transistor stack structures, the series capacitance C1 and electric capacity C2 in parallel with four transistor stack structures are connected between DC voltage DC+ and DC voltage DC, parallel circuit is connected between node A and node B.The present invention can ensure that the voltage that insulated gate bipolar transistor is born is uniform in the quiescent state; prevent over-voltage breakdown from damaging; circuit is simple and reliable; it is stable; occupy little space by the resistance for adjusting resistance R; the insulated gate bipolar transistor of disposable type specification can be protected, there is great promotion prospect.
Description
Technical field
The present invention relates to electric and electronic technical field, and in particular to a kind of equal piezoelectricity of three-level converter midpoint static state clamper
Road.
Background technology
Existing diode clamp bit-type tri-level circuit can only carry out effective voltage clamp to two of 4 IGBT in a phase
Position protection, i.e., 1,4 two IGBT pipe, 2,3 two IGBT can not be protected, so substantially increase 2,3 two IGBT mistakes
The bad probability of crushing, causes heavy losses.
The content of the invention
For above-mentioned deficiency of the prior art, a kind of three-level converter midpoint static state clamper provided by the invention is pressed
Circuit solves the problems, such as that 2,3 two IGBT of diode clamp bit-type tri-level circuit can not clamper protection.
In order to reach foregoing invention purpose, the technical solution adopted by the present invention is：
A kind of three-level converter midpoint static state clamper equalizer circuit is provided, it is included by four transistors according to emitter stage
The four transistor stack structures that colelctor electrode is composed in series, wherein, the first transistor and second transistor junction are set to node A,
Second transistor and third transistor junction are set to node C and are used as voltage output end, third transistor and the 4th transistor
Junction is set to node B, and DC voltage DC+ and DC voltage DC-, direct current are connected respectively at the both ends of four transistor stack structures
The colelctor electrode of voltage DC+ connection the first transistors, the emitter stage of the transistor of DC voltage DC- connections the 4th, in DC voltage DC+
The series capacitance C1 and electric capacity C2 in parallel with four transistor stack structures, electric capacity C1 and electricity are connected between DC voltage DC-
Hold C2 junctions and be set to node 0, parallel circuit is connected between node A and node B, parallel circuit is that resistance R and two press
According to the first diode VD1 and the second diode VD2, the first diode VD1 cathode connecting nodes A, the of cathode anode series connection
Two diode VD2 anode connecting node B, the first diode VD1 and the second diode VD2 junctions are set to node D, node 0
It is connected with node D as zero potential end.
Further, transistor is insulated gate bipolar transistor.
Further, the first diode VD1 and the second diode VD2 is fast recovery diode.
Further, resistance R is noninductive high-tension resistive or adjustable resistance.
Beneficial effects of the present invention are：
Electric capacity C1, electric capacity C2 are respectively subjected to the voltage of DC bus-bar voltage half, as the and of insulated gate bipolar transistor 1
When insulated gate bipolar transistor 2 turns on, 4 two insulated gates of insulated gate bipolar transistor 3 and insulated gate bipolar transistor
Bipolar transistor is off state, and C point current potentials are identical with DC+, and insulated gate bipolar transistor 3, insulated gate bipolar are brilliant
The total voltage that the series connection of body pipe 4 is born is whole DC bus-bar voltage UDC, at this moment A points current potential is also DC+, and resistance R is double with insulated gate
Bipolar transistor 3 blocks resistance to form parallel relationship, selects suitable resistance to make resistance R and insulated gate bipolar transistor
3 block total resistance of resistor coupled in parallel to be much smaller than the blocking resistance of insulated gate bipolar transistor 4, force insulated gate bipolar crystal
The voltage that pipe 4 is born is higher than the voltage that insulated gate bipolar transistor 3 is born, and raises B points current potential, when B points current potential is higher than straight
Flow the half voltage of bus one, be i.e. during the current potential of D points, fast recovery diode VD2 conductings, make B point current potential clampers in D point current potentials, i.e., it is exhausted
Edge grid bipolar transistor 4 bears D points and bears DC to DC- voltages i.e. half DC bus-bar voltage, insulated gate bipolar transistor 3
+ to D points voltage also it is half DC bus-bar voltage, which achieves insulated gate bipolar transistor 3, insulated gate bipolar crystal
Pressure under 4 two insulated gate bipolar transistors of pipe are static, prevents unbalanced-voltage-division from causing an insulated gate bipolar transistor
Excessive pressure damages.It can similarly obtain, when 4 two insulated gate bipolar transistor 3, insulated gate bipolar transistor insulated gate bipolar crystalline substances
Body pipe turns on, and when insulated gate bipolar transistor 1, insulated gate bipolar transistor 2 turn off, resistance R can make the reduction of A points current potential,
Fast to recover diode VD1 conductings when as little as D point current potentials, A point current potential clampers make insulated gate bipolar transistor in D point current potentials
1st, 2 two insulated gate bipolar transistors of insulated gate bipolar transistor respectively bear half DC bus-bar voltage, prevent voltage un-balance
Cause wherein one damage.
The present invention can ensure that the voltage that insulated gate bipolar transistor is born is uniform, prevents over-voltage breakdown from damaging in the quiescent state
Bad, circuit of the present invention is simple and reliable, stable, occupies little space, and by adjusting resistance R resistance, can protect disposable type
The insulated gate bipolar transistor of specification, there is great promotion prospect.
Brief description of the drawings
Fig. 1 is the circuit diagram of the present invention.
Embodiment
The embodiment of the present invention is described below, in order to which those skilled in the art understand this hair
It is bright, it should be apparent that the invention is not restricted to the scope of embodiment, for those skilled in the art,
As long as various change in the spirit and scope of the present invention that appended claim limits and determines, these changes are aobvious and easy
See, all are using the innovation and creation of present inventive concept in the row of protection.
As shown in figure 1, the three-level converter midpoint static state clamper equalizer circuit is included by four transistors according to transmitting
The four transistor stack structures that pole colelctor electrode is composed in series, wherein, the first transistor and second transistor junction are set to node
A, second transistor and third transistor junction are set to node C and are used as voltage output end, third transistor and the 4th crystal
Pipe junction is set to node B, connects DC voltage DC+ and DC voltage DC- respectively at the both ends of four transistor stack structures, directly
Flow the colelctor electrode of voltage DC+ connection the first transistors, the emitter stage of the transistor of DC voltage DC- connections the 4th, in DC voltage
Be connected with the series capacitance C1 and electric capacity C2 in parallel with four transistor stack structures between DC+ and DC voltage DC-, electric capacity C1 and
Electric capacity C2 junctions are set to node 0, and parallel circuit is connected between node A and node B, and parallel circuit is resistance R and two
The the first diode VD1 and the second diode VD2, the first diode VD1 cathode connecting nodes A to be connected according to cathode anode,
Second diode VD2 anode connecting node B, the first diode VD1 and the second diode VD2 junctions are set to node D, node
0 is connected as zero potential end with node D.Wherein, transistor is insulated gate bipolar transistor；First diode VD1 and
Second diode VD2 is fast recovery diode；Resistance R is noninductive high-tension resistive or adjustable resistance.
Insulated gate bipolar transistor (IGBT) 1, insulated gate bipolar transistor (IGBT) 2, insulated gate bipolar crystal
Manage (IGBT) 3, insulated gate bipolar transistor (IGBT) 4, resistance R, fast recovery diode VD1, fast recovery diode VD2, electricity
Hold C1 and electric capacity C2；The colelctor electrode connection electric capacity C1 of insulated gate bipolar transistor (IGBT) 1 one end is simultaneously used as dc source
Electrode input end；The emitter stage of insulated gate bipolar transistor (IGBT) 1 connects insulated gate bipolar crystal respectively as node A
Manage (IGBT) 2 colelctor electrode, resistance R one end and fast recovery diode VD1 negative pole；Insulated gate bipolar transistor (IGBT)
2 emitter stage is as node C and connects the colelctor electrode of insulated gate bipolar transistor (IGBT) 3, and node C is output end；Insulation
The emitter stage of grid bipolar transistor (IGBT) 3 connects the collection of insulated gate bipolar transistor (IGBT) 4 as node B and respectively
The positive pole of electrode, the resistance R other end and fast recovery diode VD2；Fast recovery diode VD2 negative pole is as node D and divides
Not Lian Jie fast recovery diode VD1 positive pole, the electric capacity C1 other end and electric capacity C2 one end；Insulated gate bipolar transistor
(IGBT) 4 emitter stage connects the electric capacity C2 other end and is used as DC power cathode, wherein insulated gate bipolar transistor
(IGBT) 1, insulated gate bipolar transistor (IGBT) 2, insulated gate bipolar transistor (IGBT) 3, insulated gate bipolar crystal
Pipe (IGBT) 4 is composed in series four transistor stack structures.
During specifically used, electric capacity C1, electric capacity C2 are respectively subjected to the voltage of DC bus-bar voltage half, work as insulated gate
When bipolar transistor (IGBT) 1 and insulated gate bipolar transistor (IGBT) 2 turn on, insulated gate bipolar transistor
(IGBT) 3 and 4 two insulated gate bipolar transistors of insulated gate bipolar transistor (IGBT) be off state, C point current potentials
Total voltage identical with DC+, that insulated gate bipolar transistor (IGBT) 3, the series connection of insulated gate bipolar transistor (IGBT) 4 are born
For whole DC bus-bar voltage UDC, at this moment A points current potential is also DC+, and resistance R blocks with insulated gate bipolar transistor (IGBT) 3
Resistance forms parallel relationship, selects suitable resistance that resistance R can be made to block resistance with insulated gate bipolar transistor (IGBT) 3
Total resistance in parallel is much smaller than the blocking resistance of insulated gate bipolar transistor (IGBT) 4, forces insulated gate bipolar transistor
(IGBT) 4 voltages born are higher than the voltage that insulated gate bipolar transistor (IGBT) 3 is born, and raise B points current potential, when B points
Current potential is higher than the half voltage of dc bus one, i.e. during the current potential of D points, fast recovery diode VD2 conductings, makes B point current potential clampers in D points
Current potential, i.e. insulated gate bipolar transistor (IGBT) 4 bears D points to DC- voltages i.e. half DC bus-bar voltage, insulated gate bipolar
It is also half DC bus-bar voltage that transistor npn npn (IGBT) 3, which bears DC+ to D points voltage, brilliant which achieves insulated gate bipolar
Pressure under 4 two body pipe (IGBT) 3, insulated gate bipolar transistor (IGBT) insulated gate bipolar transistors are static, is prevented
Unbalanced-voltage-division causes an insulated gate bipolar transistor excessive pressure damages.It can similarly obtain, work as insulated gate bipolar transistor
(IGBT) 3,4 two insulated gate bipolar transistors conductings of insulated gate bipolar transistor (IGBT), insulated gate bipolar crystal
When managing (IGBT) 1, the shut-off of insulated gate bipolar transistor (IGBT) 2, resistance R can make the reduction of A points current potential, when as little as D point current potentials
When, fast to recover diode VD1 conductings, A point current potential clampers make insulated gate bipolar transistor (IGBT) 1, insulation in D point current potentials
2 two insulated gate bipolar transistors of grid bipolar transistor (IGBT) respectively bear half DC bus-bar voltage, prevent voltage un-balance
Cause wherein one damage.
To sum up, by the clamp resistance R introduced in this patent, make insulated gate bipolar transistor (IGBT) 2, insulated gate double
3 two insulated gate bipolar transistors (IGBT) of bipolar transistor (IGBT) avoid over-voltage breakdown under static state.
Claims (4)
- A kind of 1. three-level converter midpoint static state clamper equalizer circuit, it is characterised in that：Including by four transistors according to hair The four transistor stack structures that emitter collector pole is composed in series, wherein, the first transistor and second transistor junction are set to save Point A, second transistor and third transistor junction are set to node C and are used as voltage output end, third transistor and the 4th crystalline substance Body pipe junction is set to node B, and DC voltage DC+ and DC voltage DC- are connected respectively at the both ends of four transistor stack structures, The colelctor electrode of DC voltage DC+ connection the first transistors, the emitter stage of the transistor of DC voltage DC- connections the 4th, in direct current The series capacitance C1 and electric capacity C2 in parallel with the four transistor stacks structure are connected between pressure DC+ and DC voltage DC-, electricity Hold C1 and electric capacity C2 junctions are set to node 0, parallel circuit, the parallel circuit are connected between the node A and node B For resistance R and two the first diode VD1 and the second diode VD2, the first diode VD1 to be connected according to cathode anode Negative electrode connect the node A, the anode of the second diode VD2 connects the node B, the first diode VD1 and Second diode VD2 junctions are set to node D, and the node 0 is connected as zero potential end with node D.
- 2. static state clamper equalizer circuit in three-level converter midpoint according to claim 1, it is characterised in that：The crystal Manage as insulated gate bipolar transistor.
- 3. static state clamper equalizer circuit in three-level converter midpoint according to claim 1, it is characterised in that：Described first Diode VD1 and the second diode VD2 is fast recovery diode.
- 4. static state clamper equalizer circuit in three-level converter midpoint according to claim 1, it is characterised in that：The resistance R is noninductive high-tension resistive or adjustable resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710936236.XA CN107592003A (en) | 2017-10-10 | 2017-10-10 | A kind of three-level converter midpoint static state clamper equalizer circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710936236.XA CN107592003A (en) | 2017-10-10 | 2017-10-10 | A kind of three-level converter midpoint static state clamper equalizer circuit |
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| CN107592003A true CN107592003A (en) | 2018-01-16 |
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| CN201710936236.XA Pending CN107592003A (en) | 2017-10-10 | 2017-10-10 | A kind of three-level converter midpoint static state clamper equalizer circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110474550A (en) * | 2019-08-21 | 2019-11-19 | 阳光电源股份有限公司 | A kind of striding capacitance type NPC three-level topology |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969881A (en) * | 2012-11-30 | 2013-03-13 | 深圳市英威腾电气股份有限公司 | Voltage sharing protection circuit and diode clamp multi-level topology device |
| CN103208910A (en) * | 2013-05-02 | 2013-07-17 | 北京合康亿盛变频科技股份有限公司 | Dynamic brake device |
| CN203596737U (en) * | 2013-11-11 | 2014-05-14 | 焦作市明株自动化工程有限责任公司 | Three-level inverter power unit with voltage-sharing protection function |
| CN207459988U (en) * | 2017-10-10 | 2018-06-05 | 北京东标电子有限公司 | A kind of three-level converter midpoint static state clamper equalizer circuit |
-
2017
- 2017-10-10 CN CN201710936236.XA patent/CN107592003A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102969881A (en) * | 2012-11-30 | 2013-03-13 | 深圳市英威腾电气股份有限公司 | Voltage sharing protection circuit and diode clamp multi-level topology device |
| CN103208910A (en) * | 2013-05-02 | 2013-07-17 | 北京合康亿盛变频科技股份有限公司 | Dynamic brake device |
| CN203596737U (en) * | 2013-11-11 | 2014-05-14 | 焦作市明株自动化工程有限责任公司 | Three-level inverter power unit with voltage-sharing protection function |
| CN207459988U (en) * | 2017-10-10 | 2018-06-05 | 北京东标电子有限公司 | A kind of three-level converter midpoint static state clamper equalizer circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110474550A (en) * | 2019-08-21 | 2019-11-19 | 阳光电源股份有限公司 | A kind of striding capacitance type NPC three-level topology |
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