CN107579015A - The method for measurement of 3D nand memory hierarchic structure critical sizes - Google Patents
The method for measurement of 3D nand memory hierarchic structure critical sizes Download PDFInfo
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Abstract
The embodiment of the present application provides a kind of method for measurement of 3D nand memories hierarchic structure critical size, and the method for measurement includes：In the non-wordline area of memory cell, key dimension measurement area is set；Multistage hierarchic structure is formed in wordline area, while the independent hierarchic structure of multiple periodic arrangements is formed in the measurement area, wherein, the independent hierarchic structure formed in the measurement area has identical critical size with forming the hierarchic structure in wordline area；Critical size measurement is carried out to the hierarchic structure of the periodic distribution in the measurement area using optical critical dimension measuring method, obtained measurement result is used for the critical size for characterizing wordline area hierarchic structure.The measuring method can realize the quick nondestructive measurement to 3D nand memory hierarchic structure critical sizes.Thus this method can be used for the on-line monitoring of the wordline area ladder pattern etching technics of 3D nand memories.
Description
Technical field
The application is related to memory technology field, more particularly to a kind of 3D nand memories hierarchic structure critical size
Method for measurement.
Background technology
The wordline area of existing 3D nand memories memory cell is usually ladder pattern, and its main technological steps is friendship
For cvd silicon oxide and thin film sacrificial layer is stacked, then by being segmented etching, this is alternately stacked film formation ladder pattern, ladder
The critical size such as wall angle and step surface width directly affects the last part technologies such as vertical metal line.
Hierarchic structure critical size in existing 3D nand memories is often measured by transmission electron microscope (TEM), because
This needs wafer carrying out section sample preparation, belongs to destructive measurement and measurement period is longer.Common SEM
(SEM) step surface width of ladder pattern etc. can only be then measured, can not effectively measure the critical size of whole ladder pattern.
The content of the invention
In view of this, the critical size of the hierarchic structure progress quick nondestructive in 3D nand memories is surveyed in order to realize
Amount, this application provides a kind of method for measurement of 3D nand memories hierarchic structure critical size.
In order to reach foregoing invention purpose, the application employs following technical scheme：
A kind of method for measurement of 3D nand memories hierarchic structure critical size, including：
In the non-wordline area of memory cell, key dimension measurement area is set；The film composition knot in the key dimension measurement area
Structure is identical with the film composition structure in wordline area；
Multistage hierarchic structure is formed in wordline area, while the independent ladder of multiple periodic arrangements is formed in the measurement area
Structure, wherein, hierarchic structure of the independent hierarchic structure formed in the measurement area with formation in wordline area has identical
Critical size；
The hierarchic structure of the periodic distribution in the measurement area is carried out using optical critical dimension measuring method crucial
Dimensional measurement, obtained measurement result are used for the critical size for characterizing wordline area hierarchic structure.
Alternatively, it is described that multistage hierarchic structure is formed in wordline area, while form multiple periodicity rows in the measurement area
The independent hierarchic structure of cloth, is specifically included：
Multiple chemical wet etching integrated technique is coordinated successively respectively to word by multiple tracks photoetching process and per pass photoetching process
Line area and measurement area carry out chemical wet etching, so as to form the N level hierarchic structures of continuous uniform distribution in wordline area, while are measuring
Area forms the independent hierarchic structure of M periodic arrangement, wherein, N >=2, M >=2, and N and M are integer.
Alternatively, it is described by multiple tracks photoetching process and per pass photoetching process coordinate multiple tracks chemical wet etching integrated technique according to
It is secondary that chemical wet etching is carried out to wordline area and measurement area respectively, so as to form continuous equally distributed multistage ladder knot in wordline area
Structure, while the independent hierarchic structure for forming multiple periodic arrangements in measurement area, are specifically included：
Step A：Wordline area and measurement area are respectively divided into several equally distributed area segments；
Step B：Photoresist is coated above wordline area and measurement area, and carries out mask patterning, with respectively in wordline area
Etching window is formed with an area segments in measurement area；
Step C：Wordline area and measurement area are performed etching according to etching window；
Step D：Repair wordline area and measure the photoresist width above area, it is reduced preset value, etching window
Width increases preset value, and the preset value is the step surface width in wordline area hierarchic structure；
Step E：Continue to perform etching the wordline area and measurement area according to the etching window after finishing；
Step F：Circulation performs step C and D, and an area segments in the wordline area form equally distributed n levels ladder
Structure, while form an independent hierarchic structure with n level steps in an area segments for measuring area；Wherein, n is just whole
Number；
Step G：Photoresist is removed, and photoresist is coated again above wordline area and measurement area, and carries out mask pattern
Change, to form etching window in another area segments in wordline area and measurement area respectively；
Circulation performs step C to step G, until the N level hierarchic structures of continuous uniform distribution are formed in wordline area, while
The independent hierarchic structure that area forms M periodic arrangement is measured, wherein, N >=2, M >=2, and N and M are integer.
Alternatively, the step A is specially：
Will according to the width ladder series that photoetching process can be formed with together with of the ladder number of levels in wordline area, step surface
Wordline area and measurement zoning are divided into several equally distributed area segments.
Alternatively, the measurement independent hierarchic structure of the area formed with least four periodic arrangement.
Alternatively, the step series for being formed at each independent hierarchic structure in the measurement area is no less than 2.
Alternatively, each independent hierarchic structure for being formed at the measurement area is inverted pyramid engraved structure.
Alternatively, the multiple independent hierarchic structures for the periodic arrangement being formed in measurement area arrange in the same direction.
Alternatively, the multiple independent hierarchic structures for being formed at the periodic arrangement measured in area are arranged along area is measured in matrix
Row.
Compared to prior art, the application has the advantages that：
As seen through the above technical solutions, the method for measurement that the application provides is formed and wordline area rank in non-memory functional areas
Terraced structure has the hierarchic structure of the periodic arrangement of identical critical size.In this way, optical critical dimension measurement side can be utilized
The critical size of the hierarchic structure of the periodic arrangement of method measurement non-memory functional areas.Because of the pass of non-memory functional areas hierarchic structure
Key size is identical with the critical size of wordline area hierarchic structure, therefore, the critical size measurement of non-memory functional areas hierarchic structure
As a result the critical size of wordline area hierarchic structure can be characterized.Therefore, the application, which will not possess, is repeated cyclically architectural feature
The measurement of 3D nand memory hierarchic structure critical sizes replaces with the rank for the periodic arrangement for having identical critical size with it
The measurement of the critical size of terraced structure, but because the critical size of the structure structure of periodic arrangement can be by with quick nothing
The optical critical dimension method for measurement of damage feature measures.So the measuring method can be realized to 3D nand memory ranks
The quick nondestructive of terraced structural key size measures.Thus this method can be used for the wordline area ladder pattern quarter of 3DNAND memories
The on-line monitoring of etching technique.
Brief description of the drawings
In order to which the embodiment of the application is expressly understood, used when the application embodiment is described below
Accompanying drawing do a brief description.
Fig. 1 is that the method for measurement flow for the 3D nand memory hierarchic structure critical sizes that the embodiment of the present application provides is shown
It is intended to；
Fig. 2 is the structure top view of the 3D nand memory memory cell in the embodiment of the present application；
Fig. 3 is the specific implementation schematic flow sheet for the step S102 that the embodiment of the present application provides；
Fig. 4 A to Fig. 4 G are a series of processing procedures of the specific implementation for the step S102 that the embodiment of the present application provides
Corresponding cross-sectional view.
Reference：
200：Non-memory functional areas, 210：Key dimension measurement area, 100：Storage functional areas, 110：Wordline area, 411 Hes
411’：First etching window, 421：First order step, 431：First rectangular channel, 410：Sacrifice layer, 420：Silicon oxide layer, 40 Hes
40’：Photoresist, 412 and 412 '：Second etching window, 422：First order step, 432 second rectangular channels.
Embodiment
The embodiment of the application is described in detail below in conjunction with the accompanying drawings.
It is visible based on wide range that existing optical critical dimension (Optical Critical Dimension, OCD), which measures,
A kind of quick nondestructive method for measurement of optical diffraction, it can only be measured with the target size for being repeated cyclically structure, and existing
3D NAND in hierarchic structure be pyramid, do not possess and be repeated cyclically architectural feature, optical critical dimension amount can not be used
Survey method.
In order to using the wordline area hierarchic structure in optical critical dimension method for measurement measurement 3D nand memories
Critical size, present invention design are as follows：Structure a cycle is arranged and wordline area hierarchic structure has identical pass
The hierarchic structure of key size.Because both have identical critical size, therefore, the crucial chi of the hierarchic structure of the periodic arrangement
The very little critical size that can be used for characterizing the wordline area hierarchic structure in 3D nand memories.In this way, 3D NAND can be deposited
The measurement of wordline area hierarchic structure critical size in reservoir can be converted to the crucial chi of the hierarchic structure of the periodic arrangement
Very little measurement.And the critical size of the hierarchic structure of the periodic arrangement can pass through this by learning key dimension measurement, therefore
Kind conversion can measure the critical size of the hierarchic structure in 3D nand memories with quick nondestructive.
Conceived based on foregoing invention, the embodiment of the present application provides a kind of 3D nand memories hierarchic structure critical size
Method for measurement.Refer to Fig. 1.The method for measurement of the 3D nand memory hierarchic structure critical sizes comprises the following steps：
S101：In the non-memory functional areas 200 of memory cell, key dimension measurement area 210 is set；The critical size amount
The film composition structure for surveying area is identical with the film composition structure in wordline area.
Fig. 2 is the structure top view of the 3D nand memory memory cell in the embodiment of the present application.As shown in Fig. 2 storage
Unit includes store function area 100 and non-memory functional areas 200, and wherein store function area 100 includes wordline area 110, is deposited non-
The position of storage functional areas 200 is provided with key dimension measurement area 210, wherein, the internal membrane structure in key dimension measurement area 210
It is identical with the internal membrane structure in wordline area 110.Corresponding internal membrane structure is that silica/sacrifice layer is alternately laminated
Structure.
S102：Multistage hierarchic structure is formed in wordline area 110, while multiple periodicity rows are formed in the measurement area 210
The independent hierarchic structure of cloth, wherein, the independent hierarchic structure formed in the measurement area 210 is with forming the rank in wordline area
Terraced structure has identical critical size.
The follow-up specific implementation that will be described in step S102.
S103：Hierarchic structure using optical critical dimension measuring method to the periodic distribution in the measurement area 210
Critical size measurement is carried out, obtained critical size correspondingly characterizes the critical size of the hierarchic structure of wordline area 110.
Specifically, the ladder knot using optical critical dimension measuring method to the periodic distribution in the measurement area 210
Height, width and the angle of structure, obtained measurement result correspondingly characterize the critical size of the hierarchic structure of wordline area 110.
The method for measurement of the 3D nand memory hierarchic structure critical sizes provided above for the embodiment of the present application.At this
In method for measurement, the rank for the periodic arrangement that there is identical critical size with wordline area hierarchic structure is formed in non-memory functional areas
Terraced structure.In this way, the ladder knot of the periodic arrangement of optical critical dimension measuring method measurement non-memory functional areas can be utilized
The critical size of structure.Because the critical size of non-memory functional areas hierarchic structure is identical with the critical size of wordline area hierarchic structure,
Therefore, the critical size measurement result of non-memory functional areas hierarchic structure can characterize the critical size of wordline area hierarchic structure.
Therefore, the application replaces the measurement for not possessing the 3D nand memory hierarchic structure critical sizes for being repeated cyclically architectural feature
The measurement of the critical size of the hierarchic structure for the periodic arrangement that there is identical critical size with it is changed to, and because is periodically arranged
The critical size of the structure structure of cloth can be measured by the optical critical dimension method for measurement with quick nondestructive feature.
So the measuring method can realize the quick nondestructive measurement to 3D nand memory hierarchic structure critical sizes.The thus party
Method can be used for the on-line monitoring of the wordline area ladder pattern etching technics of 3D nand memories.
Step S102 specific implementation is described below in detail.
In the embodiment of the present application, step S102 can be coordinated multiple by multiple tracks photoetching process and per pass photoetching process
Chemical wet etching integrated technique carries out chemical wet etching to wordline area and measurement area respectively successively, so as to form continuous uniform in wordline area
The N level hierarchic structures of distribution, while in the independent hierarchic structure for measuring M periodic arrangement of area's formation, wherein, N >=2, M >=2,
And N and M are integer.
An example of step S102 implementation is described in detail with reference to Fig. 3 to Fig. 4 G.
Referring to Fig. 3, the specific implementation can specifically include following steps：
S1021：Wordline area 110 and measurement area 210 are respectively divided into several equally distributed area segments.
It is to be appreciated that because photoresist is easy to aging in etching process, so, photoresist can not be etched continuously many times
Technique, in the embodiment of the present application, set one of photoetching process and carry out 3 etching processes.So one of photoetching process can only be right
Some grades of ladders should be formed, and step number is more in the manufacture of existing 3D nand memories, so, it usually needs multiple tracks photoetching
Etch integrated technique and complete wordline area ladder pattern segmentation etching, form continuous and uniformly distributed tens of grades of steps.
In order that the hierarchic structure that must be formed in wordline area is identical with the hierarchic structure in wordline area in real memory, wordline
Area can divide according to the ladder number of levels in wordline area, the width ladder series that photoetching process can be formed with together with of step surface
Area segments.
S1022：First of photoetching process is carried out, in wordline area 110 and coating photoresist 40 above area 210 is measured, goes forward side by side
Row mask patterning, to form the He of the first etching window 411 in an area segments in wordline area 110 and measurement area 210 respectively
411 ', the film in wordline area 110 and measurement area 210 is performed etching according to the first etching window 411 and 411 '.
Refering to Fig. 4 A, using photoetching process customary in the art, in wordline area 110 and coating photoetching above area 210 is measured
Glue 40, exposure, form mask pattern, so as to form for the first quarter in an area segments in wordline area 110 and measurement area 210 respectively
Fenetre mouth 411 and 411 ', according to first etching window 411 and 411 ' using anisotropic dry etching method to wordline area
110 perform etching with area 210 is measured, and so as to form first order step 421 in wordline area 110, while are measuring the formation of area 210 one
Individual first rectangular channel 431, wherein, the width of the first rectangular channel 431 is equal with the width of the first etching window 411 '.In the application
In embodiment, the width of the first rectangular channel 431 is set as x.
In the embodiment of the present application, an etching technics etches away one layer of alternating layer of 410/ silicon oxide layer of sacrifice layer 420.Such as
This, step structure includes one layer of sacrifice layer 410 and one layer of silicon oxide layer 420.In addition, the sacrifice layer in store function area
The raceway groove hole of memory device can be already formed with the stacked structure of 410/ silica 420.As an example, sacrifice layer 410 can
Think silicon nitride layer.
S1023：The photoresist width of finishing wordline area 110 and the top of measurement area 210 for the first time, makes it reduce preset value
Y, the width increase preset value y of the first etching window, continues to the He of wordline area 110 according to the first etching window after finishing
The film for measuring area 210 performs etching.
The preset value is the step surface width in wordline area hierarchic structure.
As shown in Figure 4 B, repair wordline area 110 and measure the width of the photoresist 40 of the top of area 210, it is reduced pre-
If value y, the width of the first etching window increases preset value y respectively, so as to expose more film surfaces, according to after finishing
One etching window continues to perform etching the film in the wordline area 110 and measurement area 210, now, first in wordline area 110
Level step continues etching and forms second level step, and the film surface exposed is etched to form first order step, by the step
After etching, the step that a step surface width is y is formed in wordline area 110, while measuring the first rectangular channel in area 210
The inverted pyramid engraved structure for being y comprising step and step surface width is formed in 431.
S1024：Second of finishing wordline area 110 and the width for measuring the photoresist 40 above area 210, make it reduce pre-
If value y, the width increase preset value y of the first etching window, continued according to the first etching window after finishing to the wordline area
110 perform etching with area 210 is measured.
The specific implementation of the step is identical with S1023, after having performed the step, corresponding wordline area and measurement area
Membrane structure partial cutaway schematic is as shown in Figure 4 C.
S1025：Photoresist 40 is removed, and carries out second photoetching process, is coated again above wordline area and measurement area
Photoresist 40 ', and carry out mask patterning, in wordline area 110 and to measure the is formed in another area segments in area 210 respectively
Two etching windows 412 and 412 ', the film in wordline area 110 and measurement area 210 is entered according to the second etching window 412 and 412 '
Row etching.
After having performed the step, corresponding wordline area and the membrane structure partial cutaway schematic such as Fig. 4 D institutes for measuring area
Show.The specific implementation of the step is identical with S1022, for the sake of brevity, is not described in detail herein.It is to be appreciated that the
Two etching windows 412 are identical with the shape of the first etching window 411, the second etching window 412 ' and the shape of the first etching window 411 '
It is identical.
S1026：Finishing wordline area and the width of photoresist 40 ' above measurement area for the first time, make it reduce preset value y,
The width increase preset value of second etching window 412 and 412 ', continues according to the second etching window 412 and 412 ' after finishing
The wordline area 110 and measurement area 210 are performed etching, so as to form first order step 422 in wordline area 110, while measured
Survey area 210 and form second rectangular channel 432.
After having performed the step, corresponding wordline area and the membrane structure partial cutaway schematic such as Fig. 4 E institutes for measuring area
Show.The specific implementation of the step is identical with S1022, for the sake of brevity, is not described in detail herein.
S1027：The width of photoresist 40 ' above second of finishing wordline area and measurement area, makes it reduce preset value, the
The width increase preset value of two etching windows 412 and 412 ', continues pair according to the second etching window 412 and 412 ' after finishing
The wordline area and measurement area perform etching.
After having performed the step, corresponding wordline area and the membrane structure partial cutaway schematic such as Fig. 4 F institutes for measuring area
Show.The specific implementation of the step is identical with S1024, for the sake of brevity, is not described in detail herein.
By above twice photoetching photoetching process and 2 lithographic etch process are respectively cooperating with 2 repetitions of formation of measurement area
Hierarchic structure.
S1028：Circulation performs multiple tracks photoetching process and multiple lithographic etch process, connects until being formed in wordline area 110
Continue equally distributed N levels hierarchic structure, while in the independent hierarchic structure (independence for measuring M periodic arrangement of the formation of area 210
Hierarchic structure is signal period structure), wherein, N >=2, M >=2, and N and M are integer.Ultimately form the section shown in Fig. 4 G
Structure chart.
In order to relatively accurately measure the critical size of hierarchic structure, alternatively, M >=4.It is formed at the measurement area
The step series of each independent hierarchic structure is no less than 2.The each independent hierarchic structure for being formed at the measurement area can be to fall
Pyramid engraved structure.
It is to be appreciated that in the embodiment of the present application, the position for the etching window that people having a common goal's photoetching process is formed is not different, its
In, the etching window that people having a common goal's photoetching process is not formed in wordline area 110 is located in different area segments, is formed and is measuring area
210 etching window is located in different area segments, and the spacing between the etching window that people having a common goal's photoetching process is not formed is identical,
It is in periodic arrangement measuring area, its can periodic arrangement in the same direction, can also in the form of two-dimensional matrix the cycle
Property arrangement.In this way, in the same direction, the distance between two neighboring etching window is equal.
The different arrangement forms for measuring the etching window in area 210 according to being formed at, accordingly, it is formed at the week for measuring area
The arrangement form of the independent hierarchic structure of phase property arrangement is also different.Correspondingly, be formed at measure area in periodic arrangement it is more
Individual independent hierarchic structure arranges in the same direction, can also be arranged in arrays.
It is that twice etching technique is coordinated with per pass photoetching process it is to be appreciated that in above-mentioned steps S102 specific example.
In this way, include the inverted pyramid structure of 3 floor ladder in the signal period structure for measuring formation in area 210.In fact, in this Shen
Please be in embodiment, per pass photoetching process, which does not limit, coordinates twice etching technics, and it can coordinate 3 times or other etch work more times
Skill, according to not people having a common goal's number of photoetching process
It is the embodiment of the application above.
Claims (9)
1. a kind of method for measurement of 3D nand memories hierarchic structure critical size, it is characterised in that the method for measurement includes：
In the non-wordline area of memory cell, key dimension measurement area is set；The key dimension measurement area film composition structure with
The film composition structure in wordline area is identical；
Multistage hierarchic structure is formed in wordline area, while the independent ladder knot of multiple periodic arrangements is formed in the measurement area
Structure, wherein, the independent hierarchic structure formed in the measurement area has identical with forming the hierarchic structure in wordline area
Critical size；
Critical size is carried out to the hierarchic structure of the periodic distribution in the measurement area using optical critical dimension measuring method
Measurement, obtained measurement result are used for the critical size for characterizing wordline area hierarchic structure.
2. according to the method for claim 1, it is characterised in that it is described to form multistage hierarchic structure in wordline area, while
The independent hierarchic structure for measuring area and forming multiple periodic arrangements, is specifically included：
Multiple chemical wet etching integrated technique is coordinated successively respectively to wordline area by multiple tracks photoetching process and per pass photoetching process
Chemical wet etching is carried out with area is measured, so as to form the N level hierarchic structures of continuous uniform distribution in wordline area, while is measuring area's shape
Into the independent hierarchic structure of M periodic arrangement, wherein, N >=2, M >=2, and N and M are integer.
3. according to the method for claim 2, it is characterised in that described by multiple tracks photoetching process and per pass photoetching process
Multiple tracks chemical wet etching integrated technique is coordinated to carry out chemical wet etching to wordline area and measurement area respectively successively, so as to be formed in wordline area
Continuous equally distributed multistage hierarchic structure, while form the independent hierarchic structure of multiple periodic arrangements, tool in measurement area
Body includes：
Step A：Wordline area and measurement area are respectively divided into several equally distributed area segments；
Step B：Photoresist is coated above wordline area and measurement area, and carries out mask patterning, with respectively in wordline area and amount
Survey in an area segments in area and form etching window；
Step C：Wordline area and measurement area are performed etching according to etching window；
Step D：Repair wordline area and measure the photoresist width above area, it is reduced preset value, the width of etching window
Increase preset value, the preset value is the step surface width in wordline area hierarchic structure；
Step E：Continue to perform etching the wordline area and measurement area according to the etching window after finishing；
Step F：Circulation performs step C and D, and an area segments in the wordline area form equally distributed n levels hierarchic structure,
Simultaneously an independent hierarchic structure with n level steps is formed in an area segments for measuring area；Wherein, n is positive integer；
Step G：Photoresist is removed, and photoresist is coated again above wordline area and measurement area, and carries out mask patterning, with
Respectively etching window is formed in another area segments in wordline area and measurement area；
Circulation performs step C to step G, until forming the N level hierarchic structures of continuous uniform distribution in wordline area, while is measuring
Area forms the independent hierarchic structure of M periodic arrangement, wherein, N >=2, M >=2, and N and M are integer.
4. according to the method for claim 3, it is characterised in that the step A is specially：
According to the ladder number of levels in wordline area, step surface the width ladder series that photoetching process can be formed with together with by wordline
Area and measurement zoning are divided into several equally distributed area segments.
5. according to the method described in claim any one of 1-4, it is characterised in that the measurement area is formed with least four cycle
Property arrangement independent hierarchic structure.
6. according to the method described in claim any one of 1-4, it is characterised in that be formed at each Essential Orders in the measurement area
The step series of terraced structure is no less than 2.
7. according to the method described in claim any one of 1-4, it is characterised in that be formed at each Essential Orders in the measurement area
Terraced structure is inverted pyramid engraved structure.
8. according to the method described in claim any one of 1-4, it is characterised in that the periodic arrangement being formed in measurement area
Multiple independent hierarchic structures arrange in the same direction.
9. according to the method for claim 8, it is characterised in that be formed at the multiple independences for measuring the periodic arrangement in area
Hierarchic structure is arranged in arrays along area is measured.
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| CN111211051B (en) * | 2020-01-02 | 2023-01-06 | 长江存储科技有限责任公司 | Step etching method, system, electronic device and computer readable storage medium |
| CN112909008A (en) * | 2021-03-16 | 2021-06-04 | 长江存储科技有限责任公司 | Three-dimensional memory and preparation method thereof |
| CN113394127A (en) * | 2021-06-16 | 2021-09-14 | 长江存储科技有限责任公司 | Method for monitoring critical dimension of 3D memory bridging structure |
| WO2023206158A1 (en) * | 2022-04-27 | 2023-11-02 | Intel NDTM US LLC | Consolidation of staircase area etch and cmos contact area etch in 3d nand |
| CN118019434A (en) * | 2024-04-10 | 2024-05-10 | 济南大学 | Method for reducing breakage rate of piezoelectric film of silicon substrate |
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