CN107573922A - A kind of liquid metal quantum material and preparation method thereof - Google Patents

A kind of liquid metal quantum material and preparation method thereof Download PDF

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CN107573922A
CN107573922A CN201710648055.7A CN201710648055A CN107573922A CN 107573922 A CN107573922 A CN 107573922A CN 201710648055 A CN201710648055 A CN 201710648055A CN 107573922 A CN107573922 A CN 107573922A
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liquid metal
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indium
bismuth
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CN107573922B (en
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刘静
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Beijing Dream Ink Technology Co Ltd
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Abstract

The present invention relates to a kind of liquid metal quantum material and preparation method thereof, the liquid metal quantum material, including internal quantum dot particle or quantum device, and it is coated on the liquid metal outside the quantum dot particle or quantum device;Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid metal compounds layer outside the liquid metal nano-liquid droplet.The invention also discloses the method for preparing the liquid metal quantum material.Liquid metal quantum material of the present invention has the liquid, flexibility, deformability of mystique;Material manufacture difficulty greatly reduces so that the electronics interconnection difficulty of traditional quantum material or device substantially reduces, advantageously in the application of quantum techniques.

Description

A kind of liquid metal quantum material and preparation method thereof
Technical field
The invention belongs to quantum Material Field, more particularly to a kind of liquid metal quantum material and preparation method thereof.
Background technology
Quantum material is that a major class is both different from microcosmic atom, molecule in physics, chemistry or even biological property, is also shown Write the new material for being different from macro object.Due to the quantum confined effect (also referred to as quantum size effect) in it in uniqueness, amount The material behavior of sub- material often shows many novel new features, new effect between both macro and micro object Should.Such as when semiconductor crystal is small to nanoscale (1 nanometer of a ten thousandth for being approximately equal to hairline width), different sizes Same substance can send the light of different colours, respective effects can be used for the high-resolution fluoroscopic examination of tiny organism object; More effects can also be used to illuminating, show, quantum laser device, quantum type solar cell, quantum calculation, quantum communication, amount Son is stealthy etc..In recent years, with a series of important breakthroughs obtained in quantum application technology, the research and development of quantum material and device Turn into a brand-new field with application, industry it is believed that quantum material to be expected leading future in relevant field tens of The technological innovation path in year.
Currently, a series of unique quantum materials have been developed in researcher, and involved material category is also gradually enriched Get up.Wherein than more typical person such as, the quasi-zero dimension nano material quantum dot being made up of atom and molecular aggregate, can by CdS, CdSe, CdTe, ZnSe, InP, InAs etc. are made.In addition, cause that industry greatly payes attention to also has built-in electrical insulation, appearance conductive Topological insulator, Bi can be passed through2Se3, Sb2Te3, Bi2Te3It is made etc. compound.It is not difficult to find out, all these quantum materials have One common feature, be exactly that all of which is solid, it is impossible to deform, split, certain difficulty be present in manufacture, application is upper also can be by To a definite limitation.
Currently, although the mankind can produce nano-transistor of the size in 1 ran, a large amount of such transistors Great difficulty on electrical interconnection is realized be present.Also because in this way, industry have as view, i.e., " do not reduce transistor in itself not It is the method solved the problems, such as.Allow to produce the transistor of 100,000,000,000,000 molecular volumes of number, attempt them to connect together, tie Fruit may is that mess." obviously, if quantum material can be produced using liquid metal, it is different from traditional liquid metal, Different from existing quantum material, supported great core material is provided for emerging quantum engineering, be achieved in wider model The quantum techniques application enclosed, or even promote the great-leap-forward development of quantum technical industry.Generally speaking, with various quantum behaviors Liquid metal quantum material, it is expected to the existing technology category for existing liquid metal and the quantum material that takes on a new look, received simultaneously for promotion The quick manufacture of rice electronics and integrated it can bring important breakthrough.
The content of the invention
Based on above-mentioned background technology, to overcome the limitation of existing quantum material and changing traditional quantum material with solid-state Plastochondria is existing and can not deform, and nano electron device is not easy to realize the present situation of electrical interconnection;It is an object of the invention to provide A kind of liquid metal quantum material, the liquid of expected Quantum Properties is obtained by being subject to specially treated to liquid metal nano particle Metal quantum material, available for for example deformable quantum storage of making quantum device, quantum crystal pipe or more purposes.
The liquid metal quantum material, including internal quantum dot particle or quantum device, and it is coated on the amount Liquid-metal layer outside son point particle or quantum device;
Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid Liquid metal compounds layer outside metal nano drop.
The liquid metal quantum material includes internal quantum dot particle or quantum device, and is coated on the quantum Liquid-metal layer outside point particle or quantum device;Also include liquid metal compounds layer;
Oxide layer or the liquid metal compounds conversion zone of the liquid metal compounds layer for the liquid metal;
The oxide layer is that oxidation generation occurs in air or oxygen for liquid metal;
The compound reaction is generated by liquid metal and compound reaction;
The compound is one kind in chloride, and the present invention preferentially selects CuCl2、AgCl、NiCl2Middle one kind.Used The concentration of chloride be 0.01~2mol/L, preferably 0.1~1mol/L.
With entering a proposition, the liquid-metal layer is 1 with the thickness ratio of the quantum dot particle or quantum device to the present invention ~100: 1;Preferably 30~70:1.
The thickness ratio of the liquid metal compounds layer and the liquid-metal layer is 1~100: 1~100;Or, the liquid The thickness ratio of state metal compound layer and the liquid metal nano-liquid droplet is 1~100: 1~100;Preferably 30~70: 30~ 70。
Length on the three-dimensional of the liquid metal quantum material is 1nm~200nm.
Wherein, three-dimensional length is specially chi of the liquid metal quantum material on three directions of solid space x, y, z Very little, the size is required to be in quantum confined effect scope;The three-dimensional length of the liquid metal quantum material depends on selecting Liquid metal species, by material category need made.
Present invention further propose that, the liquid metal be selected from gallium, indium, tin, bismuth, zinc, gallium-base alloy, indium-base alloy, One or more in kamash alloy, bismuth-base alloy, zinc-containing alloy or lead-containing alloy;
Preferably, the liquid metal be selected from gallium indium, gallium tin, bismuth tin, indium bismuth, indium tin, gallium indium tin, bismuth indium tin, bismuth indium zinc, One or more in indium tin zinc, bismuth tin copper, bismuth indium cadmium, gallium indium tin zinc, indium tin zinc bismuth, bismuth indium tin silver or zinc bismuth silver copper alloy.
Used liquid metal is low-melting-point metal or low-melting point metal alloy;The low melting point is specifically that fusing point is less than 232℃。
Such material can be worked in the form of liquid states of matter at a certain temperature, itself have natural electric conductivity or semiconductor Attribute.
For the liquid metal when using gallium-base alloy, bismuth-base alloy or indium-base alloy, effect is preferable.Above-mentioned liquid metal Can exist in liquid form at normal temperatures, thus it is very convenient for preparing for target quantum material;Certainly, according to higher Melting point metals, respective objects can be also completed, but temperature maintains to need additional measures.Therefore, using above-mentioned liquid metal alloy more Less preparation section, save and prepare cost.
Gallium content is 10wt%~100wt% in the gallium-base alloy;In the bismuth-base alloy bi content be 10wt%~ 95wt%;Indium content is 10wt%~95wt% in the indium-base alloy;
Preferably, gallium content is 50wt%~90wt% in the gallium-base alloy;Bi content is in the bismuth-base alloy 50wt%~90wt%, indium content is 50wt%~90wt% in the indium-base alloy.
Present invention further propose that, the quantum dot particle be selected from CdS, CdSe, CdTe, ZnSe, InP, InAs, Bi2Se3、Sb2Te3、Bi2Te3In one or more;
A diameter of 1nm~80nm of the quantum dot particle;Preferably 10nm~50nm.
The quantum device is selected from single electron CNT transistor, molybdenum disulfide compound, silicon transistor, graphene etc. In one or more.
A further object of the present invention is the preparation method for providing above-mentioned liquid metal quantum material, and methods described is included such as Lower step:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order Liquid metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) quantum dot particle or quantum device, stirring, and/or second of ultrasound are added in nanoscale liquid metal, i.e., Obtain metal nano drop;
Methods described also includes step 3), is specially:Metal nano drop is placed in air or oxygen and aoxidized, is produced; Or add obtained metal nano drop in compound solution, stirring, produce.
The time of second of ultrasound is 0.5-5h, and frequency is 0.5~10MHz, power 0.5-50W.
Present invention also offers the preparation of the above-mentioned liquid metal quantum material for not containing quantum dot particle or quantum device Method, comprise the following steps:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order Liquid metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) nanoscale liquid metal droplet is placed in air or oxygen and aoxidized, produced;Or by nanoscale liquid metal liquid It is added dropwise in compound solution, stirs, produce.
The liquid metal is 10~100: 1 with the mass ratio of the quantum dot particle or quantum device.
The solution containing surfactant be HCl, water, NaCl or NaOH solution in one kind, the surface active The concentration of agent solution is 0.01~2mol/L, preferably 0.5~1.5mol/L.It is anti-that with liquid metal chemistry can occur for the solution Reaction or should be replaced;It can realize and obtain more quantum materials.
In order to avoid the fusion of molten drop, and auxiliary preparation process.The present invention with the addition of surface work in preparation process Agent.The surfactant can be anion surfactant, cationic surfactant, zwitterionic surfactant or Zwitterionic surfactant;
Wherein described anion surfactant is in stearic acid, lauryl sodium sulfate or neopelex It is one or more;
The cationic surfactant is quaternary ammonium compound;
The zwitterionic surfactant is one or more in lecithin, amino acid pattern or betaine type;
The nonionic surfactant (is told selected from fatty glyceride, fatty acid sorbitan (sapn) or polysorbate Temperature) in one or more;
Present invention further propose that obtained metal nano drop can be placed in multiple compounds solution, stirs, can obtain The liquid metal quantum material of multiple functions characteristic must be integrated.
When metal nano drop, which is placed in air or oxygen, to be aoxidized, formed outer layer be oxide layer semiconductor, Inside is electric conductor and the liquid metal quantum material of quantum device;
When metal nano drop is added in compound solution, outer layer is formed by displacement chemical reaction as solid, interior Portion is the liquid metal quantum material of liquid electric conductor.
The stirring is a kind of in mechanical agitation, electromagnetic agitation, ultrasonic agitation or vibrations stirring;Preferably electromagnetic agitation; Wherein electric field can further trigger quantum dot particle or quantum equipment is swallowed in liquid metal particle.
The time of the stirring is 0.5-5h;When using being stirred by ultrasonic, the ultrasonic frequency is 0.5~10MHz, institute The power for stating ultrasound is 0.5-50W.
The preparation of the liquid metal is specially:It is first under conditions of temperature is 30-600 DEG C in proportion by metal mixed Place 30~120 minutes, then stirred 4~6 hours by 300~700rpm speed, produce liquid metal.
Liquid metal quantum material prepared by the present invention can be according to being actually needed, can will as stated above obtained two Kind or a variety of liquid metal quantum materials are mixed once again, and specific liquid metal quantum material is made.
Preferably, the present invention provides a kind of method for preparing liquid metal quantum material, methods described include with Lower step:
1) by the liquid metal of preparation add the liquid water containing the lauryl sodium sulfate that concentration is 0.01~2mol/L, In NaCl or NaOH solution, liquid metal is dispersed into by micro-sized metal drop using mechanical injection method, reusing ultrasound will Micro-meter scale molten drop is dispersed as a diameter of nanometer liquid metal in 40~60nm;
2) in nanometer liquid metal solution, quantum dot particle or quantum equipment are added, it is uniform using electromagnetic agitation, then lead to Overfrequency is 0.5~10MHz, and power is 0.5-50W ultrasound condition, 0.5~5h of ultrasound, smashes and aids in being dispersed as a diameter of 25~35nm nano-liquid droplet, produce the metal nano drop of coated quantum dots particle or quantum device.
3) the metal nano drop is placed in oxygen or air, aoxidized by 1-30 minutes, that is, it is oxygen to form outer layer Change the liquid metal quantum material of layer;Or the metal nano drop is added to the CuCl that the concentration is 0.01-2mol/L2 In solution, stir, you can liquid metal quantum material.
Another preferred scheme of the present invention provides a kind of method for preparing liquid metal quantum material, methods described include with Lower step:
1) by the liquid metal of preparation add the liquid water containing the lauryl sodium sulfate that concentration is 0.01~2mol/L, In NaCl or NaOH solution, liquid metal is dispersed into by micro-sized metal drop using mechanical injection method, reusing ultrasound will Micro-meter scale molten drop is dispersed as a diameter of nanometer liquid metal droplet in 40~60nm;
2) the nanometer liquid metal droplet is placed in oxygen or air, is aoxidized by 1-30 minutes, that is, form outer layer For the liquid metal quantum material of oxide layer;Or it is 0.01-2mol/L's that the metal nano drop is added into the concentration CuCl2In solution, stir, you can liquid metal quantum material.
The present invention at least has the following advantages that:
1st, taken on a new look existing concept and the technology category of existing liquid metal and quantum material, provides liquid metal first The material of this brand new conception of quantum material, have the abundant characteristic of liquid metal deformation and quantum material concurrently;
2. liquid metal quantum material extends the category of traditional quantum material.Itself it is not necessarily nano crystal material Material, can be the aggregate of a variety of properties.For example liquid metal quantum material can be by superficial semiconductor, intermediate layer solid metallic Crystal and the internal metallic conductor composition being in a liquid state, thus more complicated physical chemistry behavior is reflected, thus it can develop Go out more quantum devices.
3. in addition to possessing the liquid of great mystique, flexibility, deformability, liquid metal quantum material can be produced perhaps It is different from the attribute of traditional quantum material more, such as, the inside of famous topological insulator is insulation, and border or surface are in Electrical conductive behavior, and liquid metal quantum material appearance easily aoxidizes and becomes semiconductor, and this oxide-film prevents internal gold immediately The oxidation of category, thus become inner conductive, exterior section insulation or the state in semiconductor, the physical attribute that can be presented and be expected to more It is abundant.Moreover, its production method is faster than traditional quantum material, size can be made smaller, because itself is in liquid, because This such nanometer liquid metal can be cut or disperseed by the probe of energy beam or mechanical system such as AFM, Give the size that specific oxidation course realizes inner conductive core again afterwards, this nano metal drop is analogous to famous atom a bit Liquid drop model of nucleus, simply the latter is a kind of theory setting, and liquid metal quantum material is then real material.
4th, compared with traditional quantum material, liquid metal quantum material manufacture difficulty greatly reduces, advantageously in amount The application of sub- technology;
5th, due to the introducing of liquid metal so that the electronics interconnection difficulty of traditional quantum material or device substantially reduces, So as to create condition to manufacture practical device;
6th, thus the proposition of liquid metal quantum material is the ideational innovation to traditional metal materials and quantum material, can be Amplify out a large amount of whole new set of applications.
Brief description of the drawings
Fig. 1 is the structural representation of liquid metal quantum material of the present invention.
In figure:1st, liquid metal;2nd, quantum material or device;3rd, liquid metal compounds layer.
Embodiment
Following examples are used to illustrate the present invention, but are not limited to the scope of the present invention.
Embodiment 1
A kind of liquid metal quantum material, including liquid-metal layer and quantum dot particle;The liquid metal closes for gallium indium Golden Ga24.5In, the quantum dot particle are CdS quantum dot,
Wherein described liquid metal and the mass ratio of CdS quantum dot are 10: 1.
Thus obtained liquid metal quantum material is provided simultaneously with the double grading of liquid metal and CdS quantum dot, i.e., electric Son interconnection and Quantum Properties.
Embodiment 2
The present embodiment is that liquid metal quantum material described in embodiment 1 is prepared using following steps:
1) the liquid metal gallium-indium alloy Ga is taken by proportioning24.5In;
2) liquid metal is placed in into constant temperature in air ambient to handle, treatment temperature is 50 DEG C, processing time 1h;So After be stirred, stir speed (S.S.) 500rpm, mixing time 5h;Obtain the liquid metal of liquid condition;
3) it is liquid condition by liquid metal processing, is placed in lauryl sodium sulfate of the concentration in 1.5mol/L scopes Solution in, liquid metal self-dispersing is passed through into high intensity again afterwards into micro-meter scale molten drop using mechanical injection method Ultrasound is smashed and aided in is dispersed as nano metal drop of the diameter dimension in 50nm or so with outfield by micro-meter scale molten drop;
4) in the above-mentioned liquid metal particle being in solution, the CdS quantum dot that the size is 10 nanometers is added, is passed through Electric field triggering swallows quantum dot in liquid metal particle, stirs, passes through ultrasound, using frequency as 5MHz, power again afterwards For 25W condition, ultrasonic 4h is smashed and aided in and is dispersed as nano-liquid droplet of the diameter in 30nm or so with outfield, will now be measured Son point is wrapped in molten drop, produces liquid metal quantum material.
Thus obtained liquid metal quantum material is provided simultaneously with the more of liquid metal and its oxide and CdS quantum dot Weight characteristic, realize more complicated electronics interconnection and Quantum Properties.
Embodiment 3-10
Liquid metal quantum material, its raw material includes liquid metal and quantum dot particle, with differing only in for embodiment 1 Quantum dot particle is different.The preparation method of the liquid metal quantum material is the same as embodiment 2.
Numbering Liquid metal Quantum dot particle
Embodiment 3 Gallium-indium alloy Ga24.5In CdSe
Embodiment 4 Gallium-indium alloy Ga24.5In CdTe
Embodiment 5 Gallium-indium alloy Ga24.5In ZnSe
Embodiment 6 Gallium-indium alloy Ga24.5In InP
Embodiment 7 Gallium-indium alloy Ga24.5In InAs
Embodiment 8 Gallium-indium alloy Ga24.5In Bi2Se3
Embodiment 9 Gallium-indium alloy Ga24.5In Sb2Te3
Embodiment 10 Gallium-indium alloy Ga24.5In Bi2Te3
Embodiment 11-14
Liquid metal quantum material, its raw material include liquid metal and quantum equipment, the amount of differing only in embodiment 1 Sub- equipment is different.The preparation method of the liquid metal quantum material is the same as embodiment 2.
Numbering Liquid metal Quantum equipment
Embodiment 11 Gallium-indium alloy Ga24.5In CNT transistor
Embodiment 12 Gallium-indium alloy Ga24.5In Crystal of molybdenum disulfide pipe
Embodiment 13 Gallium-indium alloy Ga24.5In Silicon transistor
Embodiment 14 Gallium-indium alloy Ga24.5In Grapheme transistor
Embodiment 15
Liquid metal quantum material, its raw material include liquid metal and compound, and processing is differed only in embodiment 2 Mode is different.The preparation method of the liquid metal quantum material is as follows:
1) the liquid metal gallium-indium alloy Ga24.5In is taken by proportioning;
2) liquid metal is placed in into constant temperature in air ambient to handle, treatment temperature is 50 DEG C, processing time 1h;So After be stirred, stir speed (S.S.) 500rpm, mixing time 5h;Obtain the liquid metal of liquid condition;
3) it is liquid condition by liquid metal processing, the lauryl sodium sulfate for being placed in concentration in 1mol/L scopes is molten In liquid, liquid metal self-dispersing is passed through into high strength supersonic again afterwards into micro-meter scale molten drop using mechanical injection method Smash and aid in and micro-meter scale molten drop is dispersed as by nano metal drop of the diameter dimension in 50nm or so with outfield;
4) the nano metal drop is placed in air ambient into constant temperature to handle, treatment temperature is 50 DEG C, and processing time is 1h;Obtain the liquid metal quantum material that outer layer is insulating oxide 3;
5) the multilayer liquid metal quantum material is further smashed by electronics or ultrasound, equally aoxidized Processing, it can obtain smaller liquid metal quantum material.
The liquid metal quantum material can be that liquid metal is directly made after oxidized or chemical reaction handling in itself Into quantum dot, quantum layer structure, also possess corresponding Quantum Properties.
Embodiment 15
The present embodiment is that liquid metal quantum material described in embodiment 1 is prepared using following steps:
1) the liquid metal gallium-indium alloy Ga is taken by proportioning24.5In;
2) liquid metal is placed in into constant temperature in air ambient to handle, treatment temperature is 50 DEG C, processing time 1h;So After be stirred, stir speed (S.S.) 500rpm, mixing time 5h;Obtain the liquid metal of liquid condition;
3) it is liquid condition by liquid metal processing, is placed in lauryl sodium sulfate of the concentration in 1.5mol/L scopes Solution in, liquid metal self-dispersing is passed through into high intensity again afterwards into micro-meter scale molten drop using mechanical injection method Ultrasound is smashed and aided in is dispersed as nano metal drop of the diameter dimension in 50nm or so with outfield by micro-meter scale molten drop;
4) in the above-mentioned liquid metal particle being in solution, the CdS quantum dot that the size is 10 nanometers is added, is passed through Electric field triggering swallows quantum dot in liquid metal particle, stirs, passes through ultrasound, using frequency as 5MHz, power again afterwards For 25W condition, ultrasonic 4h is smashed and aided in and is dispersed as nano-liquid droplet of the diameter in 30nm or so with outfield, will now be measured Son point is wrapped in molten drop, obtains a nanometer liquid metal droplet.
5) the nanometer liquid metal droplet is placed in oxygen or air, is aoxidized by 1-30 minutes, that is, form outer layer For the liquid metal quantum material of oxide layer;Or it is 0.01-2mol/L's that the metal nano drop is added into the concentration CuCl2In solution, stir, that is, form the liquid metal quantum material that outer layer is compound layer.
Liquid metal quantum material is as shown in Figure 1 described in the present embodiment.
Embodiment 16
Liquid metal quantum material, its raw material include liquid metal and compound, and place is differed only in embodiment 14 Reason mode is different, its use liquid solution such as acid, alkaline solution and nanometer liquid metal to react to form unlike material exhausted Edge layer quantum material.
Embodiment 17
Liquid metal quantum material, different, the liquid metal quantum that differs only in liquid metal from embodiment 2-16 The liquid metal of material is bismuth-base alloy BiIn21Sn12Pb18
Preparation method the differing only in embodiment 1 of the present embodiment liquid metal quantum material, by bismuth-base alloy BiIn21Sn12Pb18Constant temperature 4 hours in 250 DEG C of vacuum constant-temperature container are placed in, then with magnetic stirrer 50 minutes, are made The bismuth-base alloy BiIn of liquid condition21Sn12Pb18
Wherein, bismuth-base alloy BiIn21Sn12Pb18Preparation method include:According to mass ratio 49:21:12:18 ratio point Pure bismuth, pure indium, pure tin and pure lead also known as are taken, is put into rustless steel container, container is placed in constant temperature in 250 DEG C of vacuum constant-temperature container 4 hours, then use magnetic stirrer 50 minutes, that is, bismuth-base alloy BiIn is made21Sn12Pb18, its fusing point is 58 DEG C.
Embodiment 18
Liquid metal quantum material, can be by with the embodiment 1-17 species for differing only in liquid metal and quantum material Multiple combinations form.
Although above the present invention is made to retouch in detail with general explanation, embodiment and experiment State, but on the basis of the present invention, it can be made some modifications or improvements, this is apparent to those skilled in the art 's.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, are belonged to claimed Scope.

Claims (10)

1. a kind of liquid metal quantum material, it is characterised in that include the quantum dot particle or quantum device of inside, and cladding Liquid-metal layer outside the quantum dot particle or quantum device;
Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid metal Liquid metal compounds layer outside nano-liquid droplet.
2. liquid metal quantum material according to claim 1, it is characterised in that the liquid metal quantum material includes Internal quantum dot particle or quantum device, and it is coated on the liquid metal outside the quantum dot particle or quantum device Layer, in addition to it is coated on the liquid metal compounds layer outside liquid-metal layer;
Preferably, the liquid metal compounds layer is anti-for the oxide layer of the liquid metal or the compound of the liquid metal Answer layer;
It is further preferred that the compound for generating the compound conversion zone of the liquid metal is selected from CuCl2, AgCl or NiCl2It is molten It is a kind of in liquid.
3. liquid metal quantum material according to claim 1 or 2, it is characterised in that the liquid-metal layer with it is described The thickness ratio of quantum dot particle or quantum device is 1~100: 1;
Preferably, the thickness ratio of the liquid metal compounds layer and the liquid-metal layer is 1~100: 1~100;Or, institute The thickness ratio for stating liquid metal compounds layer and the liquid metal nano-liquid droplet is 1~100: 1~100;
It is further preferred that the length on the three-dimensional of the liquid metal quantum material is 1nm~200nm.
4. according to any described liquid metal quantum materials of claim 1-3, it is characterised in that the liquid metal is selected from One in gallium, indium, tin, bismuth, zinc, gallium-base alloy, indium-base alloy, kamash alloy, bismuth-base alloy, zinc-containing alloy or lead-containing alloy Kind;
Preferably, the liquid metal is selected from gallium indium, gallium tin, bismuth tin, indium bismuth, indium tin, gallium indium tin, bismuth indium tin, bismuth indium zinc, indium tin One or more in zinc, bismuth tin copper, bismuth indium cadmium, gallium indium tin zinc, indium tin zinc bismuth, bismuth indium tin silver or zinc bismuth silver copper alloy.
5. liquid metal quantum material according to claim 4, it is characterised in that gallium content is in the gallium-base alloy 10wt%~100wt%;Bi content is 10wt%~95wt% in the bismuth-base alloy;Indium content is in the indium-base alloy 10wt%~95wt%;
Preferably, gallium content is 50wt%~90wt% in the gallium-base alloy;Bi content is 50wt% in the bismuth-base alloy ~90wt%, indium content is 50wt%~90wt% in the indium-base alloy.
6. according to any described liquid metal quantum materials of claim 1-5, it is characterised in that the quantum dot particle is selected from CdS、CdSe、CdTe、ZnSe、InP、InAs、Bi2Se3、Sb2Te3、Bi2Te3In one or more;
Preferably, a diameter of 1nm~80nm of the quantum dot particle;More preferably 10nm~50nm;
Or, the quantum device is selected from single electron CNT transistor, molybdenum disulfide compound, silicon transistor, graphene etc. In one or more.
A kind of 7. method for preparing any liquid metal quantum materials of claim 1-6, it is characterised in that including following step Suddenly:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order liquid Metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) quantum dot particle or quantum device, stirring, and/or second of ultrasound are added in nanoscale liquid metal, produces gold Belong to nano-liquid droplet;
Preferably, methods described also includes step 3), and metal nano drop is placed in air or oxygen and aoxidized, is produced;Or will Obtained metal nano drop is added in compound solution, stirring, is produced;
It is further preferred that the time of second of ultrasound is 0.5-5h, frequency is 0.5~10MHz, power 0.5-50W.
A kind of 8. method for preparing any liquid metal quantum materials of claim 1-6, it is characterised in that including following step Suddenly:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order liquid Metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) nanoscale liquid metal droplet is placed in air or oxygen and aoxidized, produced;Or, nanoscale liquid metal droplet is added Enter in compound solution, stir, produce.
9. the method according to claim 7 or 8, it is characterised in that the solution containing surfactant be HCl, water, One kind in NaCl or NaOH solution;
Preferably, the surfactant is selected from stearic acid, lauryl sodium sulfate, neopelex, quaternized Thing, lecithin, amino acid pattern, betaine type, fatty glyceride, fatty acid sorbitan or one kind or more in polysorbate Kind;
It is further preferred that the surfactant concentration is 0.01~2mol/L.
10. according to any described method of claim 7~9, it is characterised in that the stirring is mechanical agitation, electromagnetic agitation, It is a kind of in ultrasonic agitation or vibrations stirring;
Preferably, the time of the stirring is 0.5-5h.
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