CN107573922A - A kind of liquid metal quantum material and preparation method thereof - Google Patents
A kind of liquid metal quantum material and preparation method thereof Download PDFInfo
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Abstract
The present invention relates to a kind of liquid metal quantum material and preparation method thereof, the liquid metal quantum material, including internal quantum dot particle or quantum device, and it is coated on the liquid metal outside the quantum dot particle or quantum device;Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid metal compounds layer outside the liquid metal nano-liquid droplet.The invention also discloses the method for preparing the liquid metal quantum material.Liquid metal quantum material of the present invention has the liquid, flexibility, deformability of mystique;Material manufacture difficulty greatly reduces so that the electronics interconnection difficulty of traditional quantum material or device substantially reduces, advantageously in the application of quantum techniques.
Description
Technical field
The invention belongs to quantum Material Field, more particularly to a kind of liquid metal quantum material and preparation method thereof.
Background technology
Quantum material is that a major class is both different from microcosmic atom, molecule in physics, chemistry or even biological property, is also shown
Write the new material for being different from macro object.Due to the quantum confined effect (also referred to as quantum size effect) in it in uniqueness, amount
The material behavior of sub- material often shows many novel new features, new effect between both macro and micro object
Should.Such as when semiconductor crystal is small to nanoscale (1 nanometer of a ten thousandth for being approximately equal to hairline width), different sizes
Same substance can send the light of different colours, respective effects can be used for the high-resolution fluoroscopic examination of tiny organism object;
More effects can also be used to illuminating, show, quantum laser device, quantum type solar cell, quantum calculation, quantum communication, amount
Son is stealthy etc..In recent years, with a series of important breakthroughs obtained in quantum application technology, the research and development of quantum material and device
Turn into a brand-new field with application, industry it is believed that quantum material to be expected leading future in relevant field tens of
The technological innovation path in year.
Currently, a series of unique quantum materials have been developed in researcher, and involved material category is also gradually enriched
Get up.Wherein than more typical person such as, the quasi-zero dimension nano material quantum dot being made up of atom and molecular aggregate, can by CdS,
CdSe, CdTe, ZnSe, InP, InAs etc. are made.In addition, cause that industry greatly payes attention to also has built-in electrical insulation, appearance conductive
Topological insulator, Bi can be passed through2Se3, Sb2Te3, Bi2Te3It is made etc. compound.It is not difficult to find out, all these quantum materials have
One common feature, be exactly that all of which is solid, it is impossible to deform, split, certain difficulty be present in manufacture, application is upper also can be by
To a definite limitation.
Currently, although the mankind can produce nano-transistor of the size in 1 ran, a large amount of such transistors
Great difficulty on electrical interconnection is realized be present.Also because in this way, industry have as view, i.e., " do not reduce transistor in itself not
It is the method solved the problems, such as.Allow to produce the transistor of 100,000,000,000,000 molecular volumes of number, attempt them to connect together, tie
Fruit may is that mess." obviously, if quantum material can be produced using liquid metal, it is different from traditional liquid metal,
Different from existing quantum material, supported great core material is provided for emerging quantum engineering, be achieved in wider model
The quantum techniques application enclosed, or even promote the great-leap-forward development of quantum technical industry.Generally speaking, with various quantum behaviors
Liquid metal quantum material, it is expected to the existing technology category for existing liquid metal and the quantum material that takes on a new look, received simultaneously for promotion
The quick manufacture of rice electronics and integrated it can bring important breakthrough.
The content of the invention
Based on above-mentioned background technology, to overcome the limitation of existing quantum material and changing traditional quantum material with solid-state
Plastochondria is existing and can not deform, and nano electron device is not easy to realize the present situation of electrical interconnection;It is an object of the invention to provide
A kind of liquid metal quantum material, the liquid of expected Quantum Properties is obtained by being subject to specially treated to liquid metal nano particle
Metal quantum material, available for for example deformable quantum storage of making quantum device, quantum crystal pipe or more purposes.
The liquid metal quantum material, including internal quantum dot particle or quantum device, and it is coated on the amount
Liquid-metal layer outside son point particle or quantum device;
Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid
Liquid metal compounds layer outside metal nano drop.
The liquid metal quantum material includes internal quantum dot particle or quantum device, and is coated on the quantum
Liquid-metal layer outside point particle or quantum device;Also include liquid metal compounds layer;
Oxide layer or the liquid metal compounds conversion zone of the liquid metal compounds layer for the liquid metal;
The oxide layer is that oxidation generation occurs in air or oxygen for liquid metal;
The compound reaction is generated by liquid metal and compound reaction;
The compound is one kind in chloride, and the present invention preferentially selects CuCl2、AgCl、NiCl2Middle one kind.Used
The concentration of chloride be 0.01~2mol/L, preferably 0.1~1mol/L.
With entering a proposition, the liquid-metal layer is 1 with the thickness ratio of the quantum dot particle or quantum device to the present invention
~100: 1;Preferably 30~70:1.
The thickness ratio of the liquid metal compounds layer and the liquid-metal layer is 1~100: 1~100;Or, the liquid
The thickness ratio of state metal compound layer and the liquid metal nano-liquid droplet is 1~100: 1~100;Preferably 30~70: 30~
70。
Length on the three-dimensional of the liquid metal quantum material is 1nm~200nm.
Wherein, three-dimensional length is specially chi of the liquid metal quantum material on three directions of solid space x, y, z
Very little, the size is required to be in quantum confined effect scope;The three-dimensional length of the liquid metal quantum material depends on selecting
Liquid metal species, by material category need made.
Present invention further propose that, the liquid metal be selected from gallium, indium, tin, bismuth, zinc, gallium-base alloy, indium-base alloy,
One or more in kamash alloy, bismuth-base alloy, zinc-containing alloy or lead-containing alloy;
Preferably, the liquid metal be selected from gallium indium, gallium tin, bismuth tin, indium bismuth, indium tin, gallium indium tin, bismuth indium tin, bismuth indium zinc,
One or more in indium tin zinc, bismuth tin copper, bismuth indium cadmium, gallium indium tin zinc, indium tin zinc bismuth, bismuth indium tin silver or zinc bismuth silver copper alloy.
Used liquid metal is low-melting-point metal or low-melting point metal alloy;The low melting point is specifically that fusing point is less than
232℃。
Such material can be worked in the form of liquid states of matter at a certain temperature, itself have natural electric conductivity or semiconductor
Attribute.
For the liquid metal when using gallium-base alloy, bismuth-base alloy or indium-base alloy, effect is preferable.Above-mentioned liquid metal
Can exist in liquid form at normal temperatures, thus it is very convenient for preparing for target quantum material;Certainly, according to higher
Melting point metals, respective objects can be also completed, but temperature maintains to need additional measures.Therefore, using above-mentioned liquid metal alloy more
Less preparation section, save and prepare cost.
Gallium content is 10wt%~100wt% in the gallium-base alloy;In the bismuth-base alloy bi content be 10wt%~
95wt%;Indium content is 10wt%~95wt% in the indium-base alloy;
Preferably, gallium content is 50wt%~90wt% in the gallium-base alloy;Bi content is in the bismuth-base alloy
50wt%~90wt%, indium content is 50wt%~90wt% in the indium-base alloy.
Present invention further propose that, the quantum dot particle be selected from CdS, CdSe, CdTe, ZnSe, InP, InAs,
Bi2Se3、Sb2Te3、Bi2Te3In one or more;
A diameter of 1nm~80nm of the quantum dot particle;Preferably 10nm~50nm.
The quantum device is selected from single electron CNT transistor, molybdenum disulfide compound, silicon transistor, graphene etc.
In one or more.
A further object of the present invention is the preparation method for providing above-mentioned liquid metal quantum material, and methods described is included such as
Lower step:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order
Liquid metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) quantum dot particle or quantum device, stirring, and/or second of ultrasound are added in nanoscale liquid metal, i.e.,
Obtain metal nano drop;
Methods described also includes step 3), is specially:Metal nano drop is placed in air or oxygen and aoxidized, is produced;
Or add obtained metal nano drop in compound solution, stirring, produce.
The time of second of ultrasound is 0.5-5h, and frequency is 0.5~10MHz, power 0.5-50W.
Present invention also offers the preparation of the above-mentioned liquid metal quantum material for not containing quantum dot particle or quantum device
Method, comprise the following steps:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order
Liquid metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) nanoscale liquid metal droplet is placed in air or oxygen and aoxidized, produced;Or by nanoscale liquid metal liquid
It is added dropwise in compound solution, stirs, produce.
The liquid metal is 10~100: 1 with the mass ratio of the quantum dot particle or quantum device.
The solution containing surfactant be HCl, water, NaCl or NaOH solution in one kind, the surface active
The concentration of agent solution is 0.01~2mol/L, preferably 0.5~1.5mol/L.It is anti-that with liquid metal chemistry can occur for the solution
Reaction or should be replaced;It can realize and obtain more quantum materials.
In order to avoid the fusion of molten drop, and auxiliary preparation process.The present invention with the addition of surface work in preparation process
Agent.The surfactant can be anion surfactant, cationic surfactant, zwitterionic surfactant or
Zwitterionic surfactant;
Wherein described anion surfactant is in stearic acid, lauryl sodium sulfate or neopelex
It is one or more;
The cationic surfactant is quaternary ammonium compound;
The zwitterionic surfactant is one or more in lecithin, amino acid pattern or betaine type;
The nonionic surfactant (is told selected from fatty glyceride, fatty acid sorbitan (sapn) or polysorbate
Temperature) in one or more;
Present invention further propose that obtained metal nano drop can be placed in multiple compounds solution, stirs, can obtain
The liquid metal quantum material of multiple functions characteristic must be integrated.
When metal nano drop, which is placed in air or oxygen, to be aoxidized, formed outer layer be oxide layer semiconductor,
Inside is electric conductor and the liquid metal quantum material of quantum device;
When metal nano drop is added in compound solution, outer layer is formed by displacement chemical reaction as solid, interior
Portion is the liquid metal quantum material of liquid electric conductor.
The stirring is a kind of in mechanical agitation, electromagnetic agitation, ultrasonic agitation or vibrations stirring;Preferably electromagnetic agitation;
Wherein electric field can further trigger quantum dot particle or quantum equipment is swallowed in liquid metal particle.
The time of the stirring is 0.5-5h;When using being stirred by ultrasonic, the ultrasonic frequency is 0.5~10MHz, institute
The power for stating ultrasound is 0.5-50W.
The preparation of the liquid metal is specially:It is first under conditions of temperature is 30-600 DEG C in proportion by metal mixed
Place 30~120 minutes, then stirred 4~6 hours by 300~700rpm speed, produce liquid metal.
Liquid metal quantum material prepared by the present invention can be according to being actually needed, can will as stated above obtained two
Kind or a variety of liquid metal quantum materials are mixed once again, and specific liquid metal quantum material is made.
Preferably, the present invention provides a kind of method for preparing liquid metal quantum material, methods described include with
Lower step:
1) by the liquid metal of preparation add the liquid water containing the lauryl sodium sulfate that concentration is 0.01~2mol/L,
In NaCl or NaOH solution, liquid metal is dispersed into by micro-sized metal drop using mechanical injection method, reusing ultrasound will
Micro-meter scale molten drop is dispersed as a diameter of nanometer liquid metal in 40~60nm;
2) in nanometer liquid metal solution, quantum dot particle or quantum equipment are added, it is uniform using electromagnetic agitation, then lead to
Overfrequency is 0.5~10MHz, and power is 0.5-50W ultrasound condition, 0.5~5h of ultrasound, smashes and aids in being dispersed as a diameter of
25~35nm nano-liquid droplet, produce the metal nano drop of coated quantum dots particle or quantum device.
3) the metal nano drop is placed in oxygen or air, aoxidized by 1-30 minutes, that is, it is oxygen to form outer layer
Change the liquid metal quantum material of layer;Or the metal nano drop is added to the CuCl that the concentration is 0.01-2mol/L2
In solution, stir, you can liquid metal quantum material.
Another preferred scheme of the present invention provides a kind of method for preparing liquid metal quantum material, methods described include with
Lower step:
1) by the liquid metal of preparation add the liquid water containing the lauryl sodium sulfate that concentration is 0.01~2mol/L,
In NaCl or NaOH solution, liquid metal is dispersed into by micro-sized metal drop using mechanical injection method, reusing ultrasound will
Micro-meter scale molten drop is dispersed as a diameter of nanometer liquid metal droplet in 40~60nm;
2) the nanometer liquid metal droplet is placed in oxygen or air, is aoxidized by 1-30 minutes, that is, form outer layer
For the liquid metal quantum material of oxide layer;Or it is 0.01-2mol/L's that the metal nano drop is added into the concentration
CuCl2In solution, stir, you can liquid metal quantum material.
The present invention at least has the following advantages that:
1st, taken on a new look existing concept and the technology category of existing liquid metal and quantum material, provides liquid metal first
The material of this brand new conception of quantum material, have the abundant characteristic of liquid metal deformation and quantum material concurrently;
2. liquid metal quantum material extends the category of traditional quantum material.Itself it is not necessarily nano crystal material
Material, can be the aggregate of a variety of properties.For example liquid metal quantum material can be by superficial semiconductor, intermediate layer solid metallic
Crystal and the internal metallic conductor composition being in a liquid state, thus more complicated physical chemistry behavior is reflected, thus it can develop
Go out more quantum devices.
3. in addition to possessing the liquid of great mystique, flexibility, deformability, liquid metal quantum material can be produced perhaps
It is different from the attribute of traditional quantum material more, such as, the inside of famous topological insulator is insulation, and border or surface are in
Electrical conductive behavior, and liquid metal quantum material appearance easily aoxidizes and becomes semiconductor, and this oxide-film prevents internal gold immediately
The oxidation of category, thus become inner conductive, exterior section insulation or the state in semiconductor, the physical attribute that can be presented and be expected to more
It is abundant.Moreover, its production method is faster than traditional quantum material, size can be made smaller, because itself is in liquid, because
This such nanometer liquid metal can be cut or disperseed by the probe of energy beam or mechanical system such as AFM,
Give the size that specific oxidation course realizes inner conductive core again afterwards, this nano metal drop is analogous to famous atom a bit
Liquid drop model of nucleus, simply the latter is a kind of theory setting, and liquid metal quantum material is then real material.
4th, compared with traditional quantum material, liquid metal quantum material manufacture difficulty greatly reduces, advantageously in amount
The application of sub- technology;
5th, due to the introducing of liquid metal so that the electronics interconnection difficulty of traditional quantum material or device substantially reduces,
So as to create condition to manufacture practical device;
6th, thus the proposition of liquid metal quantum material is the ideational innovation to traditional metal materials and quantum material, can be
Amplify out a large amount of whole new set of applications.
Brief description of the drawings
Fig. 1 is the structural representation of liquid metal quantum material of the present invention.
In figure:1st, liquid metal;2nd, quantum material or device;3rd, liquid metal compounds layer.
Embodiment
Following examples are used to illustrate the present invention, but are not limited to the scope of the present invention.
Embodiment 1
A kind of liquid metal quantum material, including liquid-metal layer and quantum dot particle;The liquid metal closes for gallium indium
Golden Ga24.5In, the quantum dot particle are CdS quantum dot,
Wherein described liquid metal and the mass ratio of CdS quantum dot are 10: 1.
Thus obtained liquid metal quantum material is provided simultaneously with the double grading of liquid metal and CdS quantum dot, i.e., electric
Son interconnection and Quantum Properties.
Embodiment 2
The present embodiment is that liquid metal quantum material described in embodiment 1 is prepared using following steps:
1) the liquid metal gallium-indium alloy Ga is taken by proportioning24.5In;
2) liquid metal is placed in into constant temperature in air ambient to handle, treatment temperature is 50 DEG C, processing time 1h;So
After be stirred, stir speed (S.S.) 500rpm, mixing time 5h;Obtain the liquid metal of liquid condition;
3) it is liquid condition by liquid metal processing, is placed in lauryl sodium sulfate of the concentration in 1.5mol/L scopes
Solution in, liquid metal self-dispersing is passed through into high intensity again afterwards into micro-meter scale molten drop using mechanical injection method
Ultrasound is smashed and aided in is dispersed as nano metal drop of the diameter dimension in 50nm or so with outfield by micro-meter scale molten drop;
4) in the above-mentioned liquid metal particle being in solution, the CdS quantum dot that the size is 10 nanometers is added, is passed through
Electric field triggering swallows quantum dot in liquid metal particle, stirs, passes through ultrasound, using frequency as 5MHz, power again afterwards
For 25W condition, ultrasonic 4h is smashed and aided in and is dispersed as nano-liquid droplet of the diameter in 30nm or so with outfield, will now be measured
Son point is wrapped in molten drop, produces liquid metal quantum material.
Thus obtained liquid metal quantum material is provided simultaneously with the more of liquid metal and its oxide and CdS quantum dot
Weight characteristic, realize more complicated electronics interconnection and Quantum Properties.
Embodiment 3-10
Liquid metal quantum material, its raw material includes liquid metal and quantum dot particle, with differing only in for embodiment 1
Quantum dot particle is different.The preparation method of the liquid metal quantum material is the same as embodiment 2.
Numbering | Liquid metal | Quantum dot particle |
Embodiment 3 | Gallium-indium alloy Ga24.5In | CdSe |
Embodiment 4 | Gallium-indium alloy Ga24.5In | CdTe |
Embodiment 5 | Gallium-indium alloy Ga24.5In | ZnSe |
Embodiment 6 | Gallium-indium alloy Ga24.5In | InP |
Embodiment 7 | Gallium-indium alloy Ga24.5In | InAs |
Embodiment 8 | Gallium-indium alloy Ga24.5In | Bi2Se3 |
Embodiment 9 | Gallium-indium alloy Ga24.5In | Sb2Te3 |
Embodiment 10 | Gallium-indium alloy Ga24.5In | Bi2Te3 |
Embodiment 11-14
Liquid metal quantum material, its raw material include liquid metal and quantum equipment, the amount of differing only in embodiment 1
Sub- equipment is different.The preparation method of the liquid metal quantum material is the same as embodiment 2.
Numbering | Liquid metal | Quantum equipment |
Embodiment 11 | Gallium-indium alloy Ga24.5In | CNT transistor |
Embodiment 12 | Gallium-indium alloy Ga24.5In | Crystal of molybdenum disulfide pipe |
Embodiment 13 | Gallium-indium alloy Ga24.5In | Silicon transistor |
Embodiment 14 | Gallium-indium alloy Ga24.5In | Grapheme transistor |
Embodiment 15
Liquid metal quantum material, its raw material include liquid metal and compound, and processing is differed only in embodiment 2
Mode is different.The preparation method of the liquid metal quantum material is as follows:
1) the liquid metal gallium-indium alloy Ga24.5In is taken by proportioning;
2) liquid metal is placed in into constant temperature in air ambient to handle, treatment temperature is 50 DEG C, processing time 1h;So
After be stirred, stir speed (S.S.) 500rpm, mixing time 5h;Obtain the liquid metal of liquid condition;
3) it is liquid condition by liquid metal processing, the lauryl sodium sulfate for being placed in concentration in 1mol/L scopes is molten
In liquid, liquid metal self-dispersing is passed through into high strength supersonic again afterwards into micro-meter scale molten drop using mechanical injection method
Smash and aid in and micro-meter scale molten drop is dispersed as by nano metal drop of the diameter dimension in 50nm or so with outfield;
4) the nano metal drop is placed in air ambient into constant temperature to handle, treatment temperature is 50 DEG C, and processing time is
1h;Obtain the liquid metal quantum material that outer layer is insulating oxide 3;
5) the multilayer liquid metal quantum material is further smashed by electronics or ultrasound, equally aoxidized
Processing, it can obtain smaller liquid metal quantum material.
The liquid metal quantum material can be that liquid metal is directly made after oxidized or chemical reaction handling in itself
Into quantum dot, quantum layer structure, also possess corresponding Quantum Properties.
Embodiment 15
The present embodiment is that liquid metal quantum material described in embodiment 1 is prepared using following steps:
1) the liquid metal gallium-indium alloy Ga is taken by proportioning24.5In;
2) liquid metal is placed in into constant temperature in air ambient to handle, treatment temperature is 50 DEG C, processing time 1h;So
After be stirred, stir speed (S.S.) 500rpm, mixing time 5h;Obtain the liquid metal of liquid condition;
3) it is liquid condition by liquid metal processing, is placed in lauryl sodium sulfate of the concentration in 1.5mol/L scopes
Solution in, liquid metal self-dispersing is passed through into high intensity again afterwards into micro-meter scale molten drop using mechanical injection method
Ultrasound is smashed and aided in is dispersed as nano metal drop of the diameter dimension in 50nm or so with outfield by micro-meter scale molten drop;
4) in the above-mentioned liquid metal particle being in solution, the CdS quantum dot that the size is 10 nanometers is added, is passed through
Electric field triggering swallows quantum dot in liquid metal particle, stirs, passes through ultrasound, using frequency as 5MHz, power again afterwards
For 25W condition, ultrasonic 4h is smashed and aided in and is dispersed as nano-liquid droplet of the diameter in 30nm or so with outfield, will now be measured
Son point is wrapped in molten drop, obtains a nanometer liquid metal droplet.
5) the nanometer liquid metal droplet is placed in oxygen or air, is aoxidized by 1-30 minutes, that is, form outer layer
For the liquid metal quantum material of oxide layer;Or it is 0.01-2mol/L's that the metal nano drop is added into the concentration
CuCl2In solution, stir, that is, form the liquid metal quantum material that outer layer is compound layer.
Liquid metal quantum material is as shown in Figure 1 described in the present embodiment.
Embodiment 16
Liquid metal quantum material, its raw material include liquid metal and compound, and place is differed only in embodiment 14
Reason mode is different, its use liquid solution such as acid, alkaline solution and nanometer liquid metal to react to form unlike material exhausted
Edge layer quantum material.
Embodiment 17
Liquid metal quantum material, different, the liquid metal quantum that differs only in liquid metal from embodiment 2-16
The liquid metal of material is bismuth-base alloy BiIn21Sn12Pb18。
Preparation method the differing only in embodiment 1 of the present embodiment liquid metal quantum material, by bismuth-base alloy
BiIn21Sn12Pb18Constant temperature 4 hours in 250 DEG C of vacuum constant-temperature container are placed in, then with magnetic stirrer 50 minutes, are made
The bismuth-base alloy BiIn of liquid condition21Sn12Pb18。
Wherein, bismuth-base alloy BiIn21Sn12Pb18Preparation method include:According to mass ratio 49:21:12:18 ratio point
Pure bismuth, pure indium, pure tin and pure lead also known as are taken, is put into rustless steel container, container is placed in constant temperature in 250 DEG C of vacuum constant-temperature container
4 hours, then use magnetic stirrer 50 minutes, that is, bismuth-base alloy BiIn is made21Sn12Pb18, its fusing point is 58 DEG C.
Embodiment 18
Liquid metal quantum material, can be by with the embodiment 1-17 species for differing only in liquid metal and quantum material
Multiple combinations form.
Although above the present invention is made to retouch in detail with general explanation, embodiment and experiment
State, but on the basis of the present invention, it can be made some modifications or improvements, this is apparent to those skilled in the art
's.Therefore, these modifications or improvements without departing from theon the basis of the spirit of the present invention, are belonged to claimed
Scope.
Claims (10)
1. a kind of liquid metal quantum material, it is characterised in that include the quantum dot particle or quantum device of inside, and cladding
Liquid-metal layer outside the quantum dot particle or quantum device;
Or, the liquid metal quantum material includes internal liquid metal nano-liquid droplet, and it is coated on the liquid metal
Liquid metal compounds layer outside nano-liquid droplet.
2. liquid metal quantum material according to claim 1, it is characterised in that the liquid metal quantum material includes
Internal quantum dot particle or quantum device, and it is coated on the liquid metal outside the quantum dot particle or quantum device
Layer, in addition to it is coated on the liquid metal compounds layer outside liquid-metal layer;
Preferably, the liquid metal compounds layer is anti-for the oxide layer of the liquid metal or the compound of the liquid metal
Answer layer;
It is further preferred that the compound for generating the compound conversion zone of the liquid metal is selected from CuCl2, AgCl or NiCl2It is molten
It is a kind of in liquid.
3. liquid metal quantum material according to claim 1 or 2, it is characterised in that the liquid-metal layer with it is described
The thickness ratio of quantum dot particle or quantum device is 1~100: 1;
Preferably, the thickness ratio of the liquid metal compounds layer and the liquid-metal layer is 1~100: 1~100;Or, institute
The thickness ratio for stating liquid metal compounds layer and the liquid metal nano-liquid droplet is 1~100: 1~100;
It is further preferred that the length on the three-dimensional of the liquid metal quantum material is 1nm~200nm.
4. according to any described liquid metal quantum materials of claim 1-3, it is characterised in that the liquid metal is selected from
One in gallium, indium, tin, bismuth, zinc, gallium-base alloy, indium-base alloy, kamash alloy, bismuth-base alloy, zinc-containing alloy or lead-containing alloy
Kind;
Preferably, the liquid metal is selected from gallium indium, gallium tin, bismuth tin, indium bismuth, indium tin, gallium indium tin, bismuth indium tin, bismuth indium zinc, indium tin
One or more in zinc, bismuth tin copper, bismuth indium cadmium, gallium indium tin zinc, indium tin zinc bismuth, bismuth indium tin silver or zinc bismuth silver copper alloy.
5. liquid metal quantum material according to claim 4, it is characterised in that gallium content is in the gallium-base alloy
10wt%~100wt%;Bi content is 10wt%~95wt% in the bismuth-base alloy;Indium content is in the indium-base alloy
10wt%~95wt%;
Preferably, gallium content is 50wt%~90wt% in the gallium-base alloy;Bi content is 50wt% in the bismuth-base alloy
~90wt%, indium content is 50wt%~90wt% in the indium-base alloy.
6. according to any described liquid metal quantum materials of claim 1-5, it is characterised in that the quantum dot particle is selected from
CdS、CdSe、CdTe、ZnSe、InP、InAs、Bi2Se3、Sb2Te3、Bi2Te3In one or more;
Preferably, a diameter of 1nm~80nm of the quantum dot particle;More preferably 10nm~50nm;
Or, the quantum device is selected from single electron CNT transistor, molybdenum disulfide compound, silicon transistor, graphene etc.
In one or more.
A kind of 7. method for preparing any liquid metal quantum materials of claim 1-6, it is characterised in that including following step
Suddenly:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order liquid
Metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) quantum dot particle or quantum device, stirring, and/or second of ultrasound are added in nanoscale liquid metal, produces gold
Belong to nano-liquid droplet;
Preferably, methods described also includes step 3), and metal nano drop is placed in air or oxygen and aoxidized, is produced;Or will
Obtained metal nano drop is added in compound solution, stirring, is produced;
It is further preferred that the time of second of ultrasound is 0.5-5h, frequency is 0.5~10MHz, power 0.5-50W.
A kind of 8. method for preparing any liquid metal quantum materials of claim 1-6, it is characterised in that including following step
Suddenly:
1) liquid metal is taken, is added in the solution containing surfactant, is broken up by mechanical injection method to micron order liquid
Metal, further broken up to nanoscale liquid metal using ultrasound for the first time;
2) nanoscale liquid metal droplet is placed in air or oxygen and aoxidized, produced;Or, nanoscale liquid metal droplet is added
Enter in compound solution, stir, produce.
9. the method according to claim 7 or 8, it is characterised in that the solution containing surfactant be HCl, water,
One kind in NaCl or NaOH solution;
Preferably, the surfactant is selected from stearic acid, lauryl sodium sulfate, neopelex, quaternized
Thing, lecithin, amino acid pattern, betaine type, fatty glyceride, fatty acid sorbitan or one kind or more in polysorbate
Kind;
It is further preferred that the surfactant concentration is 0.01~2mol/L.
10. according to any described method of claim 7~9, it is characterised in that the stirring is mechanical agitation, electromagnetic agitation,
It is a kind of in ultrasonic agitation or vibrations stirring;
Preferably, the time of the stirring is 0.5-5h.
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