CN107572535A - Prepare the device of dichlororosilane eiectronic grade - Google Patents
Prepare the device of dichlororosilane eiectronic grade Download PDFInfo
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- CN107572535A CN107572535A CN201710872933.3A CN201710872933A CN107572535A CN 107572535 A CN107572535 A CN 107572535A CN 201710872933 A CN201710872933 A CN 201710872933A CN 107572535 A CN107572535 A CN 107572535A
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Abstract
The invention discloses a kind of device for preparing dichlororosilane eiectronic grade.The device includes：Reactive distillation column, it is filled with the disproportionation catalyst that catalysis trichlorosilane carries out disproportionated reaction；Purifying column, heavy constituent is removed again for the reaction product in reactive distillation column first to be removed into light component and obtains refined product；And absorption purifier units, for refined product further to be gone into the removal of impurity, obtain dichlororosilane eiectronic grade.Apply the technical scheme of the present invention, trichlorosilane generates dichlorosilane under the catalysis of disproportionation catalyst in reactive distillation column, reactive distillation column overhead product removes light component and heavy constituent respectively into purifying column afterwards, meanwhile in order to reduce reaction system fluctuation, it is further ensured that product quality, absorption purifier units are set after purifying column, the removal of impurity is further gone, obtains dichlororosilane eiectronic grade, processing step is simple and obtained dichlororosilane eiectronic grade purity is high.
Description
Technical field
The present invention relates to chemical field, in particular to a kind of device for preparing dichlororosilane eiectronic grade.
Background technology
Dichlorosilane is one of accessory substance of improved Siemens production polysilicon, because low boiling point, with impurity chemical combination
Thing boiling point approaches, and is not easy to be refined.In recent years, IC industry is quickly grown, dichlorosilane because its reaction temperature is low,
Progressively turn into silicon source spy's gas of the silicon-containing films such as IC industry silicon nitride film, and apply in large-size epitaxial wafer and progressively replace
It is in great demand for trichlorosilane etc..
At present, dichlorosilane separates from production of polysilicon accessory substance mostly, and separating difficulty is big, is produced by multistage rectification
Product purity can not still meet integrated circuit industry requirement.It is proposed first to be parsed reduction tail gas in patent CN105480981A
Isolated chlorosilane, is adsorbed to chlorosilane afterwards, then two towers first take off light rear take off and restore dichlorosilane, but product
Purity is limited, it is impossible to meets electronic grade product requirement.The research of Ye You mechanisms prepares dichlorosilane using trichlorosilane disproportionation, specially
Sharp CN204490520U proposes a kind of device for producing electronic grade high-purity dichlorosilane and silane, and system is separately provided reaction
Kettle carries out disproportionated reaction, carries out rectifying again afterwards and obtains dichlorosilane, primary first-order equation product obtains through secondary response and rectifying
Silane, trichlorosilane disproportionation conversion per pass is very low, and only 10% or so, reactor needs treating capacity big, mesh in reactor product
It is low to mark constituent content, so increases system circulation amount, system loading is high, and so as to increase operating cost, and system flow is grown, and is
System fluctuation easily impacts to product quality.
The content of the invention
The present invention is intended to provide a kind of device for preparing dichlororosilane eiectronic grade, existing to solve in the prior art to solve
Have and the technical problem that dichlororosilane eiectronic grade product is unsatisfactory for requirement or unstable product quality is prepared in technology.
To achieve these goals, according to an aspect of the invention, there is provided one kind prepares dichlororosilane eiectronic grade
Device.The device includes：Reactive distillation column, it is filled with the disproportionation catalyst that catalysis trichlorosilane carries out disproportionated reaction；Purification
Tower, for the reaction product removing light component in reactive distillation column and heavy constituent to be obtained into refined product；And absorption purification is single
Member, for refined product further to be gone into the removal of impurity, obtain dichlororosilane eiectronic grade.
Further, purifying column includes first rectifying column and the Second distillation column being sequentially communicated with reactive distillation column, wherein,
Wherein first rectifying column goes out low boiling product, and Second distillation column goes out refined product and height boiling product.
Further, purifying column is packed tower or sieve-plate tower.
Further, first rectifying column and Second distillation column are each equipped with reboiler and condenser.
Further, first rectifying column and the material of Second distillation column are 316L stainless steels, and inwall is provided with polytetrafluoroethyl-ne
Alkene liner.
Further, reactive distillation column is followed successively by stripping section, conversion zone and rectifying section from the bottom up, and tower top is provided with complete solidifying
Device, bottom of towe are provided with reboiler.
Further, absorption purifier units include one or more adsorption column.
Further, the ratio of height to diameter of adsorption column is between 2~9.
Further, adsorb in purifier units and be filled with cocoanut active charcoal or polymeric adsorbent.
Further, specific surface area >=400m of cocoanut active charcoal2/ g, iodine sorption value >=1100mg/g；Polymeric adsorbent is
Large hole cation exchanger resin, there is characterization of adsorption to B, P and metal impurities.
Apply the technical scheme of the present invention, trichlorosilane generates dichloro under the catalysis of disproportionation catalyst in reactive distillation column
Dihydro silicon, afterwards reactive distillation column overhead product remove light component and heavy constituent respectively into purifying column, meanwhile, it is anti-in order to reduce
System fluctuation is answered, is further ensured that product quality, absorption purifier units are set after purifying column, the removal of impurity is further gone, obtains
Dichlororosilane eiectronic grade, processing step is simple and obtained dichlororosilane eiectronic grade purity is high.
Brief description of the drawings
The Figure of description for forming the part of the application is used for providing a further understanding of the present invention, and of the invention shows
Meaning property embodiment and its illustrate be used for explain the present invention, do not form inappropriate limitation of the present invention.In the accompanying drawings：
Fig. 1 shows the schematic flow sheet for preparing dichlororosilane eiectronic grade according to an embodiment of the present invention；And
Fig. 2 shows the apparatus structure schematic diagram for preparing dichlororosilane eiectronic grade according to an embodiment of the present invention.
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combination.Describe the present invention in detail below with reference to the accompanying drawings and in conjunction with the embodiments.
For technical problem present in prior art, the present invention proposes following technical proposal.
According to a kind of typical embodiment of the present invention, there is provided a kind of method for preparing dichlororosilane eiectronic grade.The party
Method comprises the following steps：S1, trichlorosilane products are added to the reactive distillation column progress reactive distillation for being filled with disproportionation catalyst,
Obtained reaction product；S2, reaction product is removed into light component respectively and heavy constituent obtains refined product；S3, by refined product
Absorption purifier units are sent into, the removal of impurity is further gone, obtains dichlororosilane eiectronic grade.
Trichlorosilane products are under disproportionation catalyst catalytic action, chemistry that silicon atom is connected with hydrogen atom and chlorine atom
Key is free to open, and the hydrogen atom and chlorine atom around silicon atom can be shifted mutually, and hydrogen chlorine atom is entered in course of reaction
Row is redistributed, and involved disproportionated reaction has：
Applying the technical scheme of the present invention, trichlorosilane products generate dichlorosilane under the catalysis of disproportionation catalyst,
Reactive distillation column overhead product removes light component and heavy constituent respectively afterwards, meanwhile, in order to reduce reaction system fluctuation, further
Ensure product quality, absorption purifier units are set after purifying plant, the removal of impurity is further gone, obtains electron level dichloro-dihydro
Silicon, processing step is simple and obtained dichlororosilane eiectronic grade purity is high.
Wherein, trichlorosilane products refer to trichlorosilane products in polysilicon enterprise, so more hold with respect to dichlorosilane
It is easily purified, impurity reaches ppb ranks, and follow-up disproportionation is substantially carried out component separation, reduces the purification difficulty of dichlorosilane more
It is readily obtained dichlororosilane eiectronic grade.Preferably, in trichlorosilane products trichlorosilane weight/mass percentage composition be more than
99.9999999%.
Preferably, disproportionation catalyst is the macroporous weakly basic anion exchange resin with amine groups, this disproportionation catalyst
High catalytic efficiency, be particularly suitable for the reaction application in the industry of the present invention.
Increase the capacity of returns of reactive distillation column so that primary first-order equation product circular response, improve dichlorosilane in product
Content, it is preferred that the reflux entry ratio of reactive distillation column is 6~20.
According to a kind of typical embodiment of the present invention, adsorb and cocoanut active charcoal or absorption tree are filled with purifier units
Fat, it can effectively remove B, P and metal impurities in product.
Preferably, the tower top pressure control of reactive distillation column is in 200~500kpa, and tower top temperature control is at 0~10 DEG C, tower
Conversion zone temperature control is at 30~60 DEG C.Under this pressure and temperature conditionss, be advantageous to the progress of reaction.
According to a kind of typical embodiment of the present invention, light component is first removed in S2 and removes heavy constituent again is set by series connection
What the first rectifying column and Second distillation column put were realized, wherein first rectifying column goes out low boiling product, and Second distillation column goes out purification production
Product and height boiling product.Preferably, the tower top pressure of first rectifying column and Second distillation column is controlled in 200~500kpa.
According to a kind of typical embodiment of the present invention, absorption purifier units include one or more adsorption column.It is preferred that
, the ratio of height to diameter of adsorption column is between 2~9, and temperature is between 20~70 DEG C, and pressure is between 0.2~1.0Mpa.In this condition
In the range of, efficiently refined product can be further purified.
According to a kind of typical embodiment of the present invention, there is provided a kind of device for preparing dichlororosilane eiectronic grade.The dress
Put including：The reactive distillation column that catalysis trichlorosilane carries out the disproportionation catalyst of disproportionated reaction is filled with, for by reactive distillation
Reaction product in tower, which first removes light component and removes heavy constituent again, obtains the purifying column of refined product, and for by refined product
The removal of impurity is further gone to obtain the absorption purifier units of dichlororosilane eiectronic grade.
Trichlorosilane products are under disproportionation catalyst catalytic action, chemistry that silicon atom is connected with hydrogen atom and chlorine atom
Key is free to open, and the hydrogen atom and chlorine atom around silicon atom can be shifted mutually, and hydrogen chlorine atom is entered in course of reaction
Row is redistributed, and involved disproportionated reaction has：
Apply the technical scheme of the present invention, trichlorosilane generates dichloro under the catalysis of disproportionation catalyst in reactive distillation column
Dihydro silicon, afterwards reactive distillation column overhead product remove light component and heavy constituent respectively into purifying column, meanwhile, it is anti-in order to reduce
System fluctuation is answered, is further ensured that product quality, absorption purifier units are set after purifying column, the removal of impurity is further gone, obtains
Dichlororosilane eiectronic grade, processing step is simple and obtained dichlororosilane eiectronic grade purity is high.
According to a kind of typical embodiment of the present invention, purifying column includes the first rectifying being sequentially communicated with reactive distillation column
Tower and Second distillation column, wherein, wherein first rectifying column goes out low boiling product, and Second distillation column goes out refined product and height boiling product.
Preferably, purifying column is packed tower or sieve-plate tower.
In order to ensure that rectifying column is efficiently run, it is preferred that first rectifying column and Second distillation column are each equipped with reboiler
And condenser.It is further preferred that first rectifying column and the material of Second distillation column are 316L stainless steels, inwall is provided with poly- four
PVF liner.Preferably, absorption purifier units include one or more adsorption column；The ratio of height to diameter of adsorption column 2~9 it
Between；Preferably, adsorb in purifier units and be filled with cocoanut active charcoal, can effectively remove B, P and metal impurities in product.It is more excellent
Choosing, specific surface area >=400m of cocoanut active charcoal2/ g, iodine sorption value >=1100mg/g.
According to a kind of typical embodiment of the present invention, as shown in figure 1, preparing the method for dichlororosilane eiectronic grade includes
Following steps：S1, trichlorosilane products are added to the reactive distillation column progress reactive distillation for being filled with disproportionation catalyst, obtained
Reaction product；S2, sequentially enters first rectifying column and Second distillation column by reaction product and first removes light component and remove heavy constituent again
Obtain refined product；S3, refined product is sent into absorption purifier units, the removal of impurity is further gone, obtains electron level dichloro-dihydro
Silicon.
According to a kind of typical embodiment of the present invention, reactive distillation column be followed successively by from the bottom up stripping section, conversion zone and
Rectifying section, tower top are provided with complete condenser, and bottom of towe is provided with reboiler.As shown in Fig. 2 trichlorosilane products enter from conversion zone top
Enter reactive distillation column 10, multiple disproportionated reaction is carried out in conversion zone, silane, dichlorosilane and the hydrogen silicon of a chlorine three of gas phase enter
Enter rectifying section, the liquid phase containing trichlorosilane and silicon tetrachloride enters stripping section, by the separation of rectifying section and stripping section, tower
The higher silane of purity, dichlorosilane and the hydrogen silicon condensate liquid of a chlorine three part backflow part is pushed up to produce as product,
The higher STC of tower reactor purity (silicon tetrachloride) is produced as height boiling, because the lasting extraction silane of tower top, dichlorosilane with
And the hydrogen silicon of a chlorine three so that reaction balance is broken, and reaction continues to carry out to the right, reactive distillation column tower top pressure control 200~
500kpa, 0~10 DEG C of tower top temperature, tower conversion zone 30~60 DEG C of temperature of control, at a temperature of this, the transformation efficiency of catalyst compared with
It is high.
The overhead condensation material of reactive distillation column 10 sequentially enters first rectifying column 21, Second distillation column 22, first rectifying column 21
Go out low boiling product, Second distillation column 22 goes out product and height boiling product, and each tower is equipped with reboiler and condenser, and two towers can be with
For sieve-plate tower or packed tower, column plate or filler are nonmetallic materials, and tower body is 316L materials, and equipment inner wall carries out polytetrafluoroethylene (PTFE)
Liner, inert gas is the one or more of nitrogen, argon gas or helium in production process, and the essence 22 of first rectifying column 21 and second evaporates
200~500kpa of column overhead Stress control.
The overhead product of Second distillation column 22 enters absorption purifier units 30, and absorption purifier units 30 include 1 or more suction
Attached column, according to technique needs, it is possible to achieve serial or parallel connection is run, and a wherein absorber uses when changing adsorbent
Standby absorber, guarantee system are continuously run, and filler is efficient cocoanut active charcoal or polymeric adsorbent, wherein activated carbon in adsorption column
Specific surface area >=400m2/ g, iodine sorption value >=1100mg/g, for adsorbing B, P and metal impurities, wherein metal impurities include
Al, Fe, Cr or Ni etc..To ensure the time of contact of material and adsorbent, the ratio of height to diameter of adsorption column should be between 2~9, and temperature exists
Between 20~70 DEG C, the pressure of adsorption column is between 0.2~1.0Mpa, and the material of the adsorption column is 316L stainless steels, equipment
Inwall carries out polytetrafluoroethyllining lining.
Beneficial effects of the present invention are further illustrated below in conjunction with embodiment.
Embodiment 1
Using the flow shown in Fig. 1, using the device shown in Fig. 2, specific test parameters such as table 1.
Table 1
Under these conditions, product dichlorosilane purity reaches 5N, and B, P and metal impurities total amount are within 1ppb, warp
Absorption rear impurity total amount is crossed within 0.5ppb, and impurity fluctuation is smaller.
Embodiment 2
Using the flow shown in Fig. 1, using the device shown in Fig. 2, specific test parameters such as table 2.
Table 2
Under these conditions, product dichlorosilane purity reach 4N, B, P and metal impurities total amount 1~2ppb with
Interior, by adsorbing rear impurity total amount within 1.0ppb, and impurity fluctuation is smaller.
Embodiment 3
Using the flow shown in Fig. 1, using the device shown in Fig. 2, specific test parameters such as table 3.
Table 3
Under these conditions, product dichlorosilane purity reach 4N, B, P and metal impurities total amount 1~2ppb with
Interior, by adsorbing rear impurity total amount within 1.0ppb, and impurity fluctuation is smaller.
As can be seen from the above description, the above embodiments of the present invention realize following technique effect：Using this hair
Bright technical scheme, trichlorosilane products generate dichlorosilane under the catalysis of disproportionation catalyst, afterwards reactive distillation column tower
Top product removes light component and heavy constituent respectively, meanwhile, in order to reduce reaction system fluctuation, product quality is further ensured that,
Absorption purifier units are set after purifying plant, the removal of impurity is further gone, obtains dichlororosilane eiectronic grade, processing step it is simple and
Obtained dichlororosilane eiectronic grade purity is high.
The preferred embodiments of the present invention are the foregoing is only, are not intended to limit the invention, for the skill of this area
For art personnel, the present invention can have various modifications and variations.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should be included in the scope of the protection.
Claims (10)
- A kind of 1. device for preparing dichlororosilane eiectronic grade, it is characterised in that including：Reactive distillation column, it is filled with the disproportionation catalyst that catalysis trichlorosilane carries out disproportionated reaction；Purifying column, for the reaction product removing light component in the reactive distillation column and heavy constituent to be obtained into refined product；With AndPurifier units are adsorbed, for the refined product further to be gone into the removal of impurity, obtain dichlororosilane eiectronic grade.
- 2. device according to claim 1, it is characterised in that the purifying column includes successively connecting with the reactive distillation column Logical first rectifying column and Second distillation column, wherein, wherein the first rectifying column goes out low boiling product, the Second distillation column goes out Refined product and the height boiling product.
- 3. device according to claim 1, it is characterised in that the purifying column is packed tower or sieve-plate tower.
- 4. device according to claim 2, it is characterised in that the first rectifying column and Second distillation column are each equipped with again Boil device and condenser.
- 5. device according to claim 2, it is characterised in that the first rectifying column and the material of Second distillation column are 316L stainless steels, inwall are provided with polytetrafluoroethyllining lining.
- 6. device according to claim 1, it is characterised in that the reactive distillation column be followed successively by from the bottom up stripping section, Conversion zone and rectifying section, tower top are provided with complete condenser, and bottom of towe is provided with reboiler.
- 7. device according to claim 1, it is characterised in that the absorption purifier units include one or more absorption Post.
- 8. device according to claim 7, it is characterised in that the ratio of height to diameter of the adsorption column is between 2~9.
- 9. device according to claim 1, it is characterised in that it is described absorption purifier units in be filled with cocoanut active charcoal or Polymeric adsorbent.
- 10. device according to claim 9, it is characterised in that specific surface area >=400m of the cocoanut active charcoal2/ g, iodine Adsorptive value >=1100mg/g；The polymeric adsorbent is large hole cation exchanger resin, has absorption special B, P and metal impurities Property.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108516555A (en) * | 2018-07-10 | 2018-09-11 | 天津科技大学 | A kind of preparation method and equipment of dichlororosilane eiectronic grade |
| CN109748931A (en) * | 2019-02-18 | 2019-05-14 | 苏州金宏气体股份有限公司 | A kind of preparation method and production system of high-purity ethyl orthosilicate |
| CN110857274A (en) * | 2018-08-13 | 2020-03-03 | 东营市海科新源化工有限责任公司 | Preparation method and device of dioctyl carbonate |
| CN112758936A (en) * | 2020-12-31 | 2021-05-07 | 内蒙古兴洋科技有限公司 | System and method for simultaneously producing electronic-grade silane and electronic-grade monochlorosilane |
| CN116407861A (en) * | 2023-03-16 | 2023-07-11 | 清电光伏科技有限公司 | Fixed bed-based electronic grade polysilicon rectification carbon removal device and method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103408025A (en) * | 2013-07-29 | 2013-11-27 | 中国恩菲工程技术有限公司 | Equipment for preparing dichlorosilane |
| CN103408026A (en) * | 2013-07-29 | 2013-11-27 | 中国恩菲工程技术有限公司 | Method for preparing dichlorosilane |
| CN105000564A (en) * | 2015-07-17 | 2015-10-28 | 江苏中能硅业科技发展有限公司 | Production method of dichlorosilane for preparing silane |
| CN106904617A (en) * | 2017-04-06 | 2017-06-30 | 洛阳中硅高科技有限公司 | A kind of device for preparing dichlororosilane eiectronic grade |
| CN107055550A (en) * | 2017-04-06 | 2017-08-18 | 洛阳中硅高科技有限公司 | A kind of method for preparing dichlororosilane eiectronic grade |
-
2017
- 2017-09-22 CN CN201710872933.3A patent/CN107572535A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103408025A (en) * | 2013-07-29 | 2013-11-27 | 中国恩菲工程技术有限公司 | Equipment for preparing dichlorosilane |
| CN103408026A (en) * | 2013-07-29 | 2013-11-27 | 中国恩菲工程技术有限公司 | Method for preparing dichlorosilane |
| CN105000564A (en) * | 2015-07-17 | 2015-10-28 | 江苏中能硅业科技发展有限公司 | Production method of dichlorosilane for preparing silane |
| CN106904617A (en) * | 2017-04-06 | 2017-06-30 | 洛阳中硅高科技有限公司 | A kind of device for preparing dichlororosilane eiectronic grade |
| CN107055550A (en) * | 2017-04-06 | 2017-08-18 | 洛阳中硅高科技有限公司 | A kind of method for preparing dichlororosilane eiectronic grade |
Non-Patent Citations (1)
| Title |
|---|
| 李燕: "《化工原理》", 延边大学出版社, pages: 196 - 197 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108516555A (en) * | 2018-07-10 | 2018-09-11 | 天津科技大学 | A kind of preparation method and equipment of dichlororosilane eiectronic grade |
| CN110857274A (en) * | 2018-08-13 | 2020-03-03 | 东营市海科新源化工有限责任公司 | Preparation method and device of dioctyl carbonate |
| CN109748931A (en) * | 2019-02-18 | 2019-05-14 | 苏州金宏气体股份有限公司 | A kind of preparation method and production system of high-purity ethyl orthosilicate |
| CN109748931B (en) * | 2019-02-18 | 2020-04-07 | 苏州金宏气体股份有限公司 | Preparation method and production system of high-purity ethyl orthosilicate |
| CN112758936A (en) * | 2020-12-31 | 2021-05-07 | 内蒙古兴洋科技有限公司 | System and method for simultaneously producing electronic-grade silane and electronic-grade monochlorosilane |
| CN116407861A (en) * | 2023-03-16 | 2023-07-11 | 清电光伏科技有限公司 | Fixed bed-based electronic grade polysilicon rectification carbon removal device and method |
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