CN107565988B - 4G full-band power amplifier equipment - Google Patents
4G full-band power amplifier equipment Download PDFInfo
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- CN107565988B CN107565988B CN201710877899.9A CN201710877899A CN107565988B CN 107565988 B CN107565988 B CN 107565988B CN 201710877899 A CN201710877899 A CN 201710877899A CN 107565988 B CN107565988 B CN 107565988B
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Abstract
The invention discloses a design scheme of a 4G full-band power amplifier. The invention comprises a B1 frequency band power amplifier module circuit, a B3 frequency band power amplifier module circuit, a D frequency band power amplifier module circuit, an E frequency band power amplifier module circuit, an F frequency band power amplifier module circuit, a B1/B3 uplink combining module circuit, a B1/B3 downlink combining module circuit, a TDD uplink and downlink combining module circuit, a main control switch matrix module circuit and a power supply module circuit. The power amplification system comprises power amplification of downlink base station signals and terminal signal amplification of uplink mobile users. By combining the mobile phone with the information of the current resident base station, the active acquisition of the mobile phone user information in the coverage area of the current base station can be realized, and further, the position information and the behavior information of the mobile phone user are further analyzed and processed.
Description
Technical Field
The invention belongs to the technical field of electronic information, and particularly relates to a power amplification system which covers all 4G mainstream frequency bands of an operator and is assisted to a communication base station.
Background
The big data era comes, and the living space of people is filled with various signals, wherein telecommunication operators base station signals and mobile phone signals follow the shape of people. By combining the mobile phone with the information of the current resident base station, the active acquisition of the mobile phone user information in the coverage area of the current base station can be realized, and further, the position information and the behavior information of the mobile phone user are further analyzed and processed.
Disclosure of Invention
The invention aims to design a full-band power amplification system which covers all 4G mainstream frequency bands of a full-standard operator and is assisted in a communication base station. On one hand, the system has implementation conditions in the aspects of machinery and circuits, can be used for production and is convenient and reliable to use; on the other hand, similar devices have not been widely adopted, and other similar devices in the market have no advantages of the invention, such as wide frequency band coverage. The invention relates to a power amplification system which covers all the 4G mainstream frequency bands of an operator and is assisted to a communication base station. The method helps to enhance the signal acquisition capability of the communication base station, ensures the acquisition amount of the information of the mobile terminal user, and further analyzes and processes the position information and the behavior information of the mobile phone user.
The technical scheme adopted by the invention is as follows:
the invention comprises a B1 frequency band power amplifier module circuit, a B3 frequency band power amplifier module circuit, a D frequency band power amplifier module circuit, an E frequency band power amplifier module circuit, an F frequency band power amplifier module circuit, a B1/B3 uplink combining module circuit, a B1/B3 downlink combining module circuit, a TDD uplink combining module circuit, a TDD downlink combining module circuit, a main control switch matrix module circuit and a power supply module circuit.
The power module circuit provides stable energy supply for the whole system. The B1 frequency band power amplifier module circuit supports the radio frequency power amplification of the frequency range of the downlink 2110MHz to 2170MHz of FDD and the low noise amplification of the frequency range of the uplink 1920MHz to 1980MHz, and is used for the signal coverage of the uplink and downlink base stations of the B1 frequency band in the LTE field of the communication and telecommunication operators. The B3 frequency band power amplifier module circuit supports the radio frequency power amplification of FDD in the frequency range from 1805MHz to 1880MHz and the low noise amplification of FDD in the frequency range from 1710MHz to 1785MHz, and is used for signal coverage of uplink and downlink base stations of a B3 frequency band in the LTE field of communication and telecom operators. The D-band power amplifier module circuit supports the radio frequency power amplification and low noise amplification of TDD in the frequency range of 2570MHz to 2620MHz, and is used for the signal coverage of the D-band uplink and downlink base stations of the mobile operators in the LTE field. The E-band power amplifier module circuit supports radio frequency power amplification and low noise amplification of TDD uplink and downlink within a frequency range of 2300MHz to 2400MHz, and is used for signal coverage of mobile operators on uplink and downlink base stations of an E-band in the LTE field. The F frequency band power amplifier module circuit supports TDD uplink and downlink 1880MHz to 1920MHz frequency range radio frequency power amplification and low noise amplification, and is used for mobile operator to cover uplink and downlink base station signals of the F frequency band in the LTE field. The B1/B3 uplink combining module circuit and the B1/B3 downlink combining module circuit realize the combination of uplink/downlink signals in two frequency bands of B1 or B3, and meet the combination of two FDD carriers such as B1+ B1, B1+ B3 and B3+ B3, so that the signal coverage of the communication and telecommunication system full-frequency-band free configuration in the existing network environment is realized. The TDD uplink combining module circuit and the TDD downlink combining module circuit realize the arbitrary combination of the TDD two carriers at D + E, D + F, E + F in the D frequency band, E frequency band and F frequency band of the TDD existing network, thereby realizing the full-frequency-band signal coverage of the mobile LTE system and achieving better acquisition effect. The master control switch matrix circuit receives user instructions through RS485 to realize the opening and closing of two FDD power amplifiers and the switching control of the uplink and downlink time slots of the power amplifiers of a D frequency band, an E frequency band and an F frequency band in a TDD mode.
Drawings
FIG. 1 is an overall circuit schematic of the present invention.
The specific implementation mode is as follows:
as shown in fig. 1, the present invention includes a B1 frequency band power amplifier module 1, a B3 frequency band power amplifier module 2, a D frequency band power amplifier module 3, an E frequency band power amplifier module 4, an F frequency band power amplifier module 5, a B1/B3 uplink combining module 6, a B1/B3 downlink combining module 7, a TDD uplink combining module 9, a TDD downlink combining module 10, a main control switch matrix module 8, and a power module circuit 11. The power module circuit provides stable energy supply for the whole system 11. The B1 frequency band power amplifier module circuit 1 supports the radio frequency power amplification of FDD in the frequency range of the downlink 2110MHz to 2170MHz and the low noise amplification of the frequency range of the uplink 1920MHz to 1980MHz, is used for expanding the coverage range of signals of an uplink base station and a downlink base station of a B1 frequency band in the LTE field of Unicom and telecom operators, enables the B1/B3 downlink combiner module circuit 7 to amplify power under a certain condition, enlarges the coverage range of the base station, and enables the B1/B3 uplink combiner module circuit 6 to amplify terminal signals under a certain condition, thereby meeting the analysis requirement. Different power amplification modules realize similar transmitting power amplification and receiving signal amplification through communication interaction with corresponding uplink and downlink combining modules, so that the signal coverage of a base station and the analysis success rate of weak mobile terminal signals are ensured. The B1/B3 uplink combining module circuit 6 and the B1/B3 downlink combining module circuit 7 realize combining of uplink/downlink signals in two frequency bands of B1 or B3, and satisfy FDD two-carrier combinations such as B1+ B1, B1+ B3, and B3+ B3, thereby realizing signal coverage of full-frequency-band free configuration of the network-downlink communication and telecommunication system. The B3 frequency band power amplifier module circuit 2 supports the radio frequency power amplification of FDD in the frequency range from 1805MHz to 1880MHz and the low noise amplification of FDD in the frequency range from 1710MHz to 1785MHz, and is used for signal coverage of uplink and downlink base stations of a B3 frequency band in the LTE field of communication and telecom operators. The D-band power amplifier module circuit 3 supports the radio frequency power amplification and low noise amplification of TDD in the frequency range of 2570MHz to 2620MHz, and is used for the signal coverage of the D-band uplink and downlink base stations of the mobile operators in the LTE field. The E-band power amplifier module circuit 4 supports radio frequency power amplification and low noise amplification of TDD uplink and downlink within a frequency range of 2300MHz to 2400MHz, and is used for signal coverage of uplink and downlink base stations of mobile operators in an E-band in the LTE field. The F-band power amplifier module circuit 5 supports TDD uplink and downlink 1880MHz to 1920MHz frequency range radio frequency power amplification and low noise amplification, and is used for uplink and downlink base station signal coverage of a mobile operator in a D-band in the LTE field. The B1/B3 uplink combining module circuit and the B1/B3 downlink combining module circuit realize the combination of uplink/downlink signals in two frequency bands of B1 or B3, and meet the combination of two FDD carriers such as B1+ B1, B1+ B3 and B3+ B3, so that the signal coverage of the existing network-downlink communication and telecommunication system full-frequency-band free configuration is realized. The TDD uplink combining module circuit 9 and the TDD downlink combining module circuit 10 realize arbitrary combination of the TDD two carriers at D + E, D + F, E + F in the frequency point, the frequency band E and the frequency band F of the TDD existing network, thereby realizing full-band signal coverage of the mobile LTE system and achieving a better acquisition effect. The master control switch matrix circuit 8 receives a user instruction through the RS485 to realize the opening and closing of two FDD power amplifiers and the switching control of the uplink and downlink time slots of the power amplifiers of the D frequency band, the E frequency band and the F frequency band in the TDD mode.
The module management technology applied by the invention can cover frequency points used by domestic mainstream mobile communication, namely a mobile D frequency band, an E frequency band and an F frequency band, and telecom B1 and B3 frequency bands. The function of TDD and FDD carriers is realized to meet the frequency point configuration in various scenes, thereby realizing the real full-band power amplifier.
Claims (11)
1. The utility model provides a 4G full frequency channel power amplifier equipment, includes B1 frequency channel power amplifier module, B3 frequency channel power amplifier module, D frequency channel power amplifier module, E frequency channel power amplifier module, F frequency channel power amplifier module, B1B 3 go upward to close the way module, B1B 3 downlink closes the way module, TDD goes upward to close the way module, TDD downlink closes the way module, master control switch matrix module, power module, its characterized in that:
the power supply module provides stable power supply input for the whole hardware system;
the B1 frequency band power amplifier module circuit supports the radio frequency power amplification of the frequency range of the FDD from 2110MHz to 2170MHz and the low noise amplification of the frequency range of the uplink from 1920MHz to 1980MHz, and is used for signal coverage of the uplink and downlink base stations of the B1 frequency band in the LTE field of the communication and telecommunication operators;
the B3 frequency band power amplifier module circuit supports the radio frequency power amplification of FDD in the frequency range from 1805MHz to 1880MHz and the low noise amplification of FDD in the frequency range from 1710MHz to 1785MHz, and is used for signal coverage of uplink and downlink base stations of a B3 frequency band in the LTE field by a communication and telecom operator;
the D-band power amplifier module circuit supports the radio frequency power amplification and low noise amplification of TDD (time division duplex) uplink and downlink 2570 MHz-2620 MHz frequency range, and is used for the signal coverage of a mobile operator on an uplink and downlink base station of a D-band in the LTE field;
the E-band power amplifier module circuit supports radio frequency power amplification and low noise amplification of TDD uplink and downlink within a frequency range of 2300MHz to 2400MHz, and is used for signal coverage of uplink and downlink base stations of a mobile operator in an E-band in the LTE field;
the F-band power amplifier module circuit supports the radio frequency power amplification and low noise amplification of TDD (time division duplex) uplink and downlink 1880 MHz-1920 MHz frequency range, and is used for the signal coverage of a mobile operator on an uplink base station and a downlink base station of a D-band in the LTE field;
the B1/B3 uplink combining module circuit and the B1/B3 downlink combining module circuit realize the combination of uplink/downlink signals in two frequency bands of B1 or B3, and meet the combination of two FDD carriers such as B1+ B1, B1+ B3 and B3+ B3, thereby realizing the signal coverage of communication and telecommunication system full-frequency-band free configuration in the existing network environment;
the TDD uplink combining module circuit and the TDD downlink combining module circuit realize the arbitrary combination of D + E, D + F, E + F of two TDD carriers in D frequency point, E frequency band and F frequency band of the existing TDD network, thereby realizing the full-band signal coverage of the mobile LTE system and achieving better signal coverage effect;
the master control switch matrix circuit receives a user instruction through RS485 to realize the opening and closing of two FDD power amplifiers and the switching control of the uplink and downlink time slots of the power amplifiers of a D frequency band, an E frequency band and an F frequency band in a TDD mode.
2. The 4G full-band power amplifier device according to claim 1, wherein: the amplification of the transmitting power of the base station and the amplification of the received signals of the mobile terminal are realized through the cooperation of the power amplification modules of all frequency bands, the uplink and downlink combination modules, the main control switch matrix module and the power supply module.
3. The 4G full-band power amplifier device according to claim 1, wherein: the power module provides stable power input for the whole hardware system.
4. The 4G full-band power amplifier device according to claim 1, wherein: the master control switch matrix circuit receives user instructions through RS485 to realize the opening and closing of two FDD power amplifiers and the switching control of the uplink and downlink time slots of the power amplifiers of a frequency band D, a frequency band E and a frequency band F in a TDD mode.
5. The 4G full-band power amplifier device according to claim 1, wherein: the B1 frequency band power amplifier module circuit supports the radio frequency power amplification of the frequency range of the downlink 2110MHz to 2170MHz of FDD and the low noise amplification of the frequency range of the uplink 1920MHz to 1980MHz, and is used for the signal coverage of the uplink and downlink base stations of the B1 frequency band in the LTE field of the communication and telecommunication operators.
6. The 4G full-band power amplifier device according to claim 1, wherein: the B3 frequency band power amplifier module circuit supports the radio frequency power amplification of FDD in the frequency range from 1805MHz to 1880MHz and the low noise amplification of FDD in the frequency range from 1710MHz to 1785MHz, and is used for signal coverage of uplink and downlink base stations of a B3 frequency band in the LTE field of communication and telecom operators.
7. The 4G full-band power amplifier device according to claim 1, wherein: the D-band power amplifier module circuit supports the radio frequency power amplification and low noise amplification of TDD in the frequency range of 2570MHz to 2620MHz, and is used for the signal coverage of the D-band uplink and downlink base stations of the mobile operators in the LTE field.
8. The 4G full-band power amplifier device according to claim 1, wherein: the E-band power amplifier module circuit supports radio frequency power amplification and low noise amplification of TDD uplink and downlink within a frequency range of 2300MHz to 2400MHz, and is used for signal coverage of mobile operators on uplink and downlink base stations of an E-band in the LTE field.
9. The 4G full-band power amplifier device according to claim 1, wherein: the F frequency band power amplifier module circuit supports TDD uplink and downlink 1880MHz to 1920MHz frequency range radio frequency power amplification and low noise amplification, and is used for uplink and downlink base station signal coverage of a mobile operator in a D frequency band in the LTE field.
10. The 4G full-band power amplifier device according to claim 1, wherein: the B1/B3 uplink combining module circuit and the B1/B3 downlink combining module circuit realize the combination of uplink/downlink signals in two frequency bands of B1 or B3, and meet the combination of two FDD carriers such as B1+ B1, B1+ B3 and B3+ B3, so that the signal coverage of the communication and telecommunication system full-frequency-band free configuration in the existing network environment is realized.
11. The 4G full-band power amplifier device according to claim 1, wherein: the TDD uplink combining module circuit and the TDD downlink combining module circuit realize the arbitrary combination of the TDD two carriers at D + E, D + F, E + F in the frequency point, the frequency band E and the frequency band F of the existing TDD network, thereby realizing the full-band signal coverage of the mobile LTE system and achieving better signal coverage effect.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710877899.9A CN107565988B (en) | 2017-09-27 | 2017-09-27 | 4G full-band power amplifier equipment |
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| CN201710877899.9A CN107565988B (en) | 2017-09-27 | 2017-09-27 | 4G full-band power amplifier equipment |
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| CN107565988A CN107565988A (en) | 2018-01-09 |
| CN107565988B true CN107565988B (en) | 2020-05-05 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109640382B (en) * | 2019-01-11 | 2022-01-11 | 中信科移动通信技术股份有限公司 | Micro base station and power supply control method of micro base station |
| CN110048824B (en) * | 2019-03-25 | 2022-01-04 | 惠州Tcl移动通信有限公司 | Communication module control method, control device, and computer-readable storage medium |
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| US7557673B1 (en) * | 2006-03-09 | 2009-07-07 | Bae Systems Information And Electronics Systems Integration Inc. | Wide bandwidth microwave balun |
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| CN2829113Y (en) * | 2005-08-16 | 2006-10-18 | 深圳国人通信有限公司 | Multi-network branching and combining system |
| CN201018618Y (en) * | 2006-10-18 | 2008-02-06 | 深圳国人通信有限公司 | Multi-network multiplexing platform equipment |
| CN203151745U (en) * | 2013-03-21 | 2013-08-21 | 山东省信息产业服务有限公司 | Multi-standard mobile communication data acquisition system |
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