CN107546147A - Heating chamber and semiconductor processing equipment - Google Patents
Heating chamber and semiconductor processing equipment Download PDFInfo
- Publication number
- CN107546147A CN107546147A CN201610478665.2A CN201610478665A CN107546147A CN 107546147 A CN107546147 A CN 107546147A CN 201610478665 A CN201610478665 A CN 201610478665A CN 107546147 A CN107546147 A CN 107546147A
- Authority
- CN
- China
- Prior art keywords
- heating chamber
- thermal insulation
- ring body
- recess
- insulation barriers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Resistance Heating (AREA)
Abstract
The present invention provides a kind of heating chamber and semiconductor processing equipment, including heater and thermal insulation barriers, and the heater includes pedestal, connecting cylinder and fixed seat, and pedestal is used to carry heated object, and heating element heater is provided with pedestal;Connecting cylinder is connected with pedestal with fixed seat respectively, and positioned at the central area of pedestal;The bottom chamber locular wall of fixed seat and heating chamber connects.Thermal insulation barriers are arranged between fixed seat and bottom chamber locular wall, to completely cut off heat transfer therebetween.Heating chamber provided by the invention, its temperature difference that can be reduced between the fringe region of pedestal and central area, so as to improve heating uniformity.
Description
Technical field
The present invention relates to semiconductor equipment manufacturing technology field, and in particular to a kind of heating chamber
Room and semiconductor processing equipment.
Background technology
Physical vapour deposition (PVD) (Physical Vapor Deposition, hereinafter referred to as PVD)
Technology is the conventional process technology of microelectronic, e.g., in working integrated circuit
Copper interconnection layer.Make copper interconnection layer mainly include degassing, prerinse, Ta (N) deposition and
The steps such as Cu depositions, wherein, degassing step is to remove the water on the workpieces to be machined such as substrate
Steam and other effumability impurity.When implementing degassing step, it is necessary to by quilts such as substrates
Workpieces processing is put into and 230~350 DEG C of a certain temperature is heated in heating chamber.
Fig. 1 is the sectional view of existing heating chamber.Fig. 2 is heater in Fig. 1
Sectional view.Also referring to Fig. 1 and Fig. 2, heating chamber includes heater 1, is used for
Carry and heat workpiece to be machined.Heater 1 includes pedestal 11, cooler pan 12, added
Heated filament 13, connecting cylinder 15, fixed seat 16 and thermocouple 17.Wherein, pedestal 11 is used for
Carry workpiece to be machined.Heater strip 13 is arranged in pedestal 11, processed to heat
Workpiece.Cooler pan 12 is nested in the bottom of pedestal 11, to draw connecing for heater strip 13
Line.Fixed seat 16 is fixed on the bottom chamber locular wall 2 of heating chamber.Connecting cylinder 15 divides
Other connection fixing base 16 and pedestal 11.The upper end of thermocouple 17 is connected with pedestal 11, under
End sequentially passes through cooler pan 12, connecting cylinder 15 and fixed seat 16, and from bottom chamber locular wall 2
Extend out, to the temperature of detection pedestal 11.
Above-mentioned heating chamber is inevitably present problems with actual applications:
Because connecting cylinder 15 is located at the central area of pedestal 11, cause the center of pedestal 11
The heat in domain is transferred to bottom chamber locular wall 2 via connecting cylinder 15 and fixed seat 16, so as to make
Rate of heat dispation into the central area of pedestal 11 is more than its fringe region, and then increases pedestal
The temperature difference between 11 fringe region and central area, so as to reduce heating uniformity.
The content of the invention
It is contemplated that at least solving one of technical problem present in prior art, propose
A kind of heating chamber and semiconductor processing equipment, it can reduce the fringe region of pedestal
The temperature difference between central area, so as to improve heating uniformity.
Above-mentioned purpose is realized, the present invention provides a kind of heating chamber, including heater,
The heater includes pedestal, connecting cylinder and fixed seat, and the pedestal is used to carry quilt
Heating member, heating element heater is provided with the pedestal;The connecting cylinder respectively with it is described
Pedestal is connected with the fixed seat, and positioned at the central area of the pedestal;The fixation
Seat is connected with the bottom chamber locular wall of the heating chamber, in addition to thermal insulation barriers, described heat-insulated
Part is arranged between the fixed seat and the bottom chamber locular wall, to completely cut off therebetween
Heat transfer.
Preferably, the thermal insulation barriers include heat-insulated body, are set in the heat-insulated body
There is hollow bulb, to increase the thermally conductive pathways of the heat-insulated body.
Preferably, the heat-insulated body is ring body;
The hollow bulb includes the first recess and the second recess, wherein,
First recess is multiple, and described along being arranged at axially spaced intervals in for the ring body
On the periphery wall of ring body;
Second recess is multiple, and described along being arranged at axially spaced intervals in for the ring body
On the internal perisporium of ring body;
Multiple first recesses are with multiple second recesses in the axial direction of the ring body
It is interlaced.
Preferably, each first recess and each second recess are that annular is recessed
Groove.
Preferably, the annular groove uses monolithic construction, or using by more height
The split-type structural of groove composition, the multiple sub- groove is along the circumferentially-spaced of the ring body
Distribution.
Preferably, the heat-insulated body is ring body;
The hollow bulb includes the first recess and the second recess, wherein,
First recess is to be looped around the outer of the ring body along the axial screw of the ring body
The first spiral recessed channel on perisporium;
Second recess is to be looped around along the axial screw of the ring body in the ring body
The second spiral recessed channel on perisporium;
The first spiral recessed channel is with the second spiral recessed channel in the axial direction of the ring body
It is interlaced.
Preferably, the thermal insulation barriers are one or more, and multiple thermal insulation barriers exist
It is superposed on vertical direction.
Preferably, the thermal insulation barriers are one or more, and multiple thermal insulation barriers phases
It is mutually nested, and contacted with each other between two thermal insulation barriers of arbitrary neighborhood or spaced;
Or multiple thermal insulation barriers in the vertical directions are superposed.
Preferably, material includes quartz, titanium alloy, oxidation used by the thermal insulation barriers
Zircon ceramic or outer surface are coated with the titanium alloy of zirconia ceramics material.
As another technical scheme, the present invention also provides a kind of semiconductor processing equipment,
Including heating chamber, the heating chamber employs above-mentioned heating chamber provided by the invention.
The invention has the advantages that:
Heating chamber provided by the invention, its by by thermal insulation barriers, isolation fixed seat with
Heat transfer between the bottom chamber locular wall of heating chamber, it is possible to reduce base central region
Heat bottom chamber locular wall is transferred to by connecting cylinder and fixed seat, so as to reduce base
The rate of heat dispation of seat central area, reduces between the fringe region of pedestal and central area
The temperature difference, and then heating uniformity can be improved.
Semiconductor processing equipment provided by the invention, it is by using on provided by the invention
Heating chamber is stated, heating uniformity can be improved, so as to improve process uniformity.
Brief description of the drawings
, below will be to reality for the technical scheme in the clearer explanation embodiment of the present invention
The required accompanying drawing used in example description is applied to do and simply introduce, it should be apparent that, retouch below
Accompanying drawing in stating is some embodiments of the present invention, for those of ordinary skill in the art,
On the premise of not paying creative work, can also be obtained according to these accompanying drawings other attached
Figure.
Fig. 1 is the sectional view of existing heating chamber;
Fig. 2 is the sectional view of heater in Fig. 1;
Fig. 3 is the sectional view of heating chamber provided in an embodiment of the present invention;
Fig. 4 is the enlarged drawing in I regions in Fig. 3;
Fig. 5 is a kind of sectional view for thermal insulation barriers that the embodiment of the present invention uses;
Fig. 6 is a kind of sectional view for thermal insulation barriers that the embodiment of the present invention uses;
Fig. 7 is a kind of sectional view for multiple thermal insulation barriers that the embodiment of the present invention uses;
Fig. 8 is the sectional view for another multiple thermal insulation barriers that the embodiment of the present invention uses.
Embodiment
To make those skilled in the art more fully understand technical scheme, tie below
Drawings and examples are closed to be described in further detail the present invention.Obviously, described reality
It is part of the embodiment of the present invention to apply example, rather than whole embodiments.Based on the present invention
In embodiment, those of ordinary skill in the art are not under the premise of creative work is made
The every other embodiment obtained, belongs to the scope of protection of the invention.
Fig. 3 is the sectional view of heating chamber provided in an embodiment of the present invention.Fig. 4 is Fig. 3
The enlarged drawing in middle I regions.Also referring to Fig. 3 and Fig. 4, heating chamber 20 includes setting
Put heater and thermal insulation barriers 24 in it.Wherein, the heater include pedestal 21,
Connecting cylinder 22 and fixed seat 23, wherein, pedestal 21 is used to carry heated object, and
Heating element heater (not shown) is provided with pedestal 21, to provide heat.It should add
Thermal element can be heater strip, heating tube etc..Connecting cylinder 22 respectively with pedestal 21 with
Fixed seat 23 connects, and positioned at the central area of the pedestal 21, to draw heating unit
Wiring of part etc..The bottom chamber that fixed seat 23 passes through thermal insulation barriers 24 and heating chamber 20
Wall 201 connects, the thermal insulation barriers 24 be arranged on fixed seat 23 and bottom chamber locular wall 201 it
Between, to completely cut off heat transfer therebetween.
By thermal insulation barriers 24, it is possible to reduce the heat in base central region by connecting cylinder and
Fixed seat is transferred to bottom chamber locular wall, so as to reduce the radiating in base central region speed
Rate, the temperature difference reduced between the fringe region of pedestal and central area, and then can improve
Heating uniformity.
The embodiment of thermal insulation barriers 24 is described in detail below.Specifically, scheme
5 be a kind of sectional view for thermal insulation barriers that the embodiment of the present invention uses.It is referring to Fig. 5, heat-insulated
Part 24 includes heat-insulated body 241, and hollow bulb is provided with the heat-insulated body 241, uses
To increase the thermally conductive pathways of heat-insulated body 241, so as to reduce heat-insulated body 241
Heat conduction amount, to play a part of completely cutting off heat.
In the present embodiment, as shown in figure 4, heat-insulated body 241 is ring body, its annular distance
It is corresponding with the centre bore 221 of connecting cylinder 22, to draw wiring of heating element heater etc..
Moreover, hollow bulb includes the first recess 242 and the second recess 243, it is recessed both at annular
Groove.Wherein, the first recess 242 is multiple, and is arranged at axially spaced intervals in ring along ring body
On the periphery wall of body.Second recess 243 is multiple, and is set along the axially spaced-apart of ring body
On the internal perisporium of ring body.Also, multiple first recesses 242 and multiple second recesses 243
It is interlaced in the axial direction of ring body, i.e. any one second recess 243 is positioned at therewith
At interstitial site between two adjacent the first recesses 242, and second recess 243
A part extend horizontally between two the first recesses 242 adjacent thereto so that
Hollow bulb forms multilayer maze-type structure, and the structure increases the heat conduction of heat-insulated body 241
Path, so as to reduce the heat conduction amount of heat-insulated body 241.
In actual applications, above-mentioned annular groove can use monolithic construction, Huo Zheye
The split-type structural being made up of more sub- grooves can be used, more sub- grooves are along ring body
Circumferentially-spaced distribution, for example, as shown in fig. 6, annular groove 242 is by four sub- grooves
244 compositions, circumferentially-spaced distribution of four sub- grooves 244 along heat-insulated body 241.It is preferred that
, more sub- grooves in every layer of annular groove correspondingly with annular adjacent thereto
More sub- grooves in groove are interlaced, further to increase leading for heat-insulated body 241
Hot path.
Optionally, above-mentioned thermal insulation barriers 24 are made using the relatively low heat-barrier material of thermal conductivity factor,
It is aerobic that the heat-barrier material includes quartz, titanium alloy, zirconia ceramics or outer surface coating
Change titanium alloy of zircon ceramic material etc..
It should be noted that in the present embodiment, the first recess 242 and the second recess 243
Be annular groove, but the invention is not limited in this, in actual applications, first
Recess and the second recess can also use other hollow bulb is formed multilayer labyrinth type
The structure of structure.For example, the first recess is to be looped around ring body along the axial screw of ring body
The first spiral recessed channel on periphery wall;Second recess is to be looped around along the axial screw of ring body
The second spiral recessed channel on the internal perisporium of ring body;First spiral recessed channel and the second spiral recessed channel
Interlaced in the axial direction of ring body, this can equally make hollow bulb form multilayer labyrinth type
Structure.
It should also be noted that, in the present embodiment, thermal insulation barriers 24 are one, but this
Invention is not limited thereto, and in actual applications, thermal insulation barriers can also be multiple and more
Individual thermal insulation barriers are mutually nested, and contacted with each other between two thermal insulation barriers of arbitrary neighborhood or
Person is spaced, for example, as shown in fig. 7, thermal insulation barriers 24 are two, it is and mutually nested,
And two thermal insulation barriers 24 are spaced.Or multiple thermal insulation barriers in the vertical direction phases
It is mutually stacked, for example, as shown in figure 8, thermal insulation barriers 24 are two, and in the vertical direction
It is superposed.
Explanation is needed further exist for, in the present embodiment, heat-insulated body 241 is ring body,
But the invention is not limited in this, heat-insulated body can also be other of cylinder etc.
Arbitrary structures, and the through hole for the wiring that can draw heater element is set in the heat-insulated body.
As another technical scheme, the embodiment of the present invention also provides a kind of semiconductor machining
Equipment, including heating chamber, the heating chamber is using provided in an embodiment of the present invention above-mentioned
Heating chamber.
Semiconductor processing equipment provided in an embodiment of the present invention, it is by using of the invention real
The above-mentioned heating chamber of example offer is provided, homogeneous heating can be improved, so as to improve work
Skill uniformity.
Finally it should be noted that:The above embodiments are merely illustrative of the technical solutions of the present invention,
Rather than its limitations;Although the present invention is described in detail with reference to the foregoing embodiments,
It will be understood by those within the art that:It still can be to foregoing embodiments institute
The technical scheme of record is modified, or which part technical characteristic is equally replaced
Change;And these modifications or replacement, the essence of appropriate technical solution is departed from this hair
The spirit and scope of bright each embodiment technical scheme.
Claims (10)
1. a kind of heating chamber, including heater, the heater include pedestal,
Connecting cylinder and fixed seat, the pedestal are used to carry heated object, set in the pedestal
It is equipped with heating element heater;The connecting cylinder is connected with the pedestal with the fixed seat respectively,
And positioned at the central area of the pedestal;The fixed seat and the bottom of the heating chamber
Chamber wall connects, it is characterised in that is also arranged on institute including thermal insulation barriers, the thermal insulation barriers
State between fixed seat and the bottom chamber locular wall, to completely cut off heat transfer therebetween.
2. heating chamber as claimed in claim 1, it is characterised in that the thermal insulation barriers
Including heat-insulated body, hollow bulb is provided with the heat-insulated body, it is described to increase
The thermally conductive pathways of heat-insulated body.
3. heating chamber as claimed in claim 2, it is characterised in that described heat-insulated
Body is ring body;
The hollow bulb includes the first recess and the second recess, wherein,
First recess is multiple, and described along being arranged at axially spaced intervals in for the ring body
On the periphery wall of ring body;
Second recess is multiple, and described along being arranged at axially spaced intervals in for the ring body
On the internal perisporium of ring body;
Multiple first recesses are with multiple second recesses in the axial direction of the ring body
It is interlaced.
4. heating chamber as claimed in claim 3, it is characterised in that each described the
One recess and each second recess are annular groove.
5. heating chamber as claimed in claim 4, it is characterised in that the annular is recessed
Groove uses monolithic construction, or uses the split-type structural being made up of more sub- grooves,
Circumferentially-spaced distribution of the multiple sub- groove along the ring body.
6. heating chamber as claimed in claim 2, it is characterised in that described heat-insulated
Body is ring body;
The hollow bulb includes the first recess and the second recess, wherein,
First recess is to be looped around the outer of the ring body along the axial screw of the ring body
The first spiral recessed channel on perisporium;
Second recess is to be looped around along the axial screw of the ring body in the ring body
The second spiral recessed channel on perisporium;
The first spiral recessed channel is with the second spiral recessed channel in the axial direction of the ring body
It is interlaced.
7. heating chamber as claimed in any one of claims 1 to 6, it is characterised in that
The thermal insulation barriers are one or more, and multiple thermal insulation barriers in the vertical direction phases
It is mutually stacked.
8. the heating chamber as described in claim 3-6 any one, it is characterised in that
The thermal insulation barriers are one or more, and multiple thermal insulation barriers are mutually nested, and
Contacted with each other between two thermal insulation barriers of arbitrary neighborhood or spaced;It is or multiple
The thermal insulation barriers in the vertical direction is superposed.
9. heating chamber as claimed in any one of claims 1 to 6, it is characterised in that
Material includes quartz, titanium alloy, zirconia ceramics or outer used by the thermal insulation barriers
Surface is coated with the titanium alloy of zirconia ceramics material.
10. a kind of semiconductor processing equipment, including heating chamber, it is characterised in that institute
Heating chamber is stated using the heating chamber described in claim 1-9 any one.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610478665.2A CN107546147A (en) | 2016-06-27 | 2016-06-27 | Heating chamber and semiconductor processing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610478665.2A CN107546147A (en) | 2016-06-27 | 2016-06-27 | Heating chamber and semiconductor processing equipment |
Publications (1)
Publication Number | Publication Date |
---|---|
CN107546147A true CN107546147A (en) | 2018-01-05 |
Family
ID=60961681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610478665.2A Pending CN107546147A (en) | 2016-06-27 | 2016-06-27 | Heating chamber and semiconductor processing equipment |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN107546147A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598015A (en) * | 2018-01-29 | 2018-09-28 | 德淮半导体有限公司 | Equipment for Heating Processing and its heat treatment method |
CN113745135A (en) * | 2021-11-04 | 2021-12-03 | 北京北方华创微电子装备有限公司 | Process chamber |
CN114156211A (en) * | 2021-11-25 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1557015A (en) * | 2002-03-13 | 2004-12-22 | 住友电气工业株式会社 | Holder for semiconductor production system |
US20050253285A1 (en) * | 2004-04-28 | 2005-11-17 | Sumitomo Electric Industries, Ltd. | Supporting unit for semiconductor manufacturing device and semiconductor manufacturing device with supporting unit installed |
JP2010003943A (en) * | 2008-06-23 | 2010-01-07 | Sumitomo Electric Ind Ltd | Heat insulating support and superconducting apparatus equipped with the heat insulating support |
-
2016
- 2016-06-27 CN CN201610478665.2A patent/CN107546147A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1557015A (en) * | 2002-03-13 | 2004-12-22 | 住友电气工业株式会社 | Holder for semiconductor production system |
US20050253285A1 (en) * | 2004-04-28 | 2005-11-17 | Sumitomo Electric Industries, Ltd. | Supporting unit for semiconductor manufacturing device and semiconductor manufacturing device with supporting unit installed |
JP2010003943A (en) * | 2008-06-23 | 2010-01-07 | Sumitomo Electric Ind Ltd | Heat insulating support and superconducting apparatus equipped with the heat insulating support |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108598015A (en) * | 2018-01-29 | 2018-09-28 | 德淮半导体有限公司 | Equipment for Heating Processing and its heat treatment method |
CN108598015B (en) * | 2018-01-29 | 2021-01-01 | 德淮半导体有限公司 | Heat treatment equipment and heat treatment method thereof |
CN113745135A (en) * | 2021-11-04 | 2021-12-03 | 北京北方华创微电子装备有限公司 | Process chamber |
CN113745135B (en) * | 2021-11-04 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Process chamber |
WO2023078100A1 (en) * | 2021-11-04 | 2023-05-11 | 北京北方华创微电子装备有限公司 | Process chamber |
CN114156211A (en) * | 2021-11-25 | 2022-03-08 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107546147A (en) | Heating chamber and semiconductor processing equipment | |
CN104854693B (en) | monomer electrostatic chuck | |
TWI653709B (en) | Electrostatic chuck with thermal interference zone with minimal crosstalk | |
TWI529845B (en) | Multifunctional heater/chiller pedestal for wide range wafer temperature control | |
TWI733762B (en) | Ceramic heater with enhanced rf power delivery | |
TWI654711B (en) | Base with multi-zone temperature control and multiple cleaning capabilities | |
CN109314039A (en) | Substrate support pedestal with plasma limited features | |
WO2014144502A1 (en) | Multiple zone heater | |
JP7419483B2 (en) | High temperature RF connection with integrated thermal choke | |
CN105518825B (en) | Multizone heater | |
TWI587732B (en) | Heater unit | |
KR20180121645A (en) | Cylindrical heater | |
CN101101855A (en) | Electrode pattern for resistance heating element and wafer processing apparatus | |
CN108028199A (en) | Improve the substrate heating equipment of temperature deviation characteristic | |
KR101196564B1 (en) | Heat equalizer | |
TWI686101B (en) | Heater unit | |
CN101171522B (en) | Method and device for tempering a substrate | |
WO2013142594A1 (en) | Resistance heater | |
CN209607706U (en) | Substrate heater for semiconductor processing chamber | |
CN101154555A (en) | Heating apparatus with enhanced thermal uniformity and method for making thereof | |
TW202113297A (en) | Ceramic heater and method of forming using transient liquid phase bonding | |
WO2014116434A1 (en) | Substrate processing chamber components incorporating anisotropic materials | |
CN220139751U (en) | Ceramic heater | |
KR101307741B1 (en) | Cold crucible induction melter including a metal sector having a curved outer surface | |
JP2018098431A (en) | Semiconductor module and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180105 |