CN107534083A - Magnetic field sensor with the increased linearity - Google Patents
Magnetic field sensor with the increased linearity Download PDFInfo
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- CN107534083A CN107534083A CN201680023888.8A CN201680023888A CN107534083A CN 107534083 A CN107534083 A CN 107534083A CN 201680023888 A CN201680023888 A CN 201680023888A CN 107534083 A CN107534083 A CN 107534083A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/091—Constructional adaptation of the sensor to specific applications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/098—Magnetoresistive devices comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
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Abstract
Disclose effectively increases the magnetic-field measurement linearity and makes the system, apparatus and method of intersecting axle minimum interference for tunnel magnetoresistive (TMR) Magnetic Sensor.TMR Magnetic Sensors include multiple transducer branch roads, and each branch road has multiple sensing elements.TMR Magnetic Sensors include being located at the multiple in-built electrical streamlines adjacent with each sensing element.Electric current line connected up for so that two or more sensing elements with to magnetic response of the intersecting axle effect of given field direction with opposite contribution in each transducer branch road in TMR Magnetic Sensors.Therefore, the overall field response from each transducer branch road is by internal compensation, and there is minimum intersecting axle to disturb for the output of TMR Magnetic Sensors.
Description
Cross-reference to related applications
This application claims the U.S. Provisional Application No.62/154,210 submitted on April 29th, 2015 and in April, 2016
The U.S. non-provisional application No.15/134 submitted for 20th, 134 benefit of priority, all these applications are all tied by quoting
Together in this.
Technical field
Present invention relates generally to field of magnetic field sensors, and more specifically, it is related to increase magnetic field sensor
The method of the linearity.
Background technology
It is each that magnetic field sensor has been widely used for computer, laptop computer, media player, smart phone etc.
In kind electronic equipment.Several technology/equipments that can be used for detecting magnetic field be present.Magnetic resistance (Magneto resistance, MR)
Magnetic Sensor is the promising magnetic strength survey technology for handheld application, because compared with other Magnetic Sensors, it is in sensitivity
Had the advantage that in terms of degree, power and process costs.MR Magnetic Sensors can include giant magnetoresistance (Giant Magneto
Resistance, GMR) sensor, anisotropic magnetoresistive (Anisotropic Magneto resistance, AMR) sensor,
Tunnel magnetoresistive (Tunneling Magneto resistance, TMR) sensor etc..
TMR elements are made up of two ferromagnetic layers separated by non magnetic insulating tunnel barrier.One layer has in magnetic field
The direction of magnetization of " freedom " rotation.Another layer has not to be rotated when in medium to the low intensive magnetic field of interesting sensing
" fixed " reference magnetization.If the direction of magnetization of two layers is parallel to each other, then the resistance of tunnel barrier is low.On the contrary, work as
When the direction of magnetization is antiparallel, resistance is high.Therefore, passed through based on TMR magnetic field sensor because free magnetic layer is in response to field
Magnetic field is converted into electric signal relative to resistance variations caused by the angle change of fixed bed.
Magneto-resistive magnetic sensors including TMR sensor are all influenceed by intersecting axle (cross-axis) effect.Although these
Sensor is designed to one magnetic field it is expected in sensitive axes of sensing, but slightly quick be present for the field orthogonal with sensitive axes
Sensitivity.These orthogonal fields are referred to as cross(ed) field or intersecting axle magnetic field.Intersecting axle effect is characterized by intersection field intensity
Caused by susceptibility suppresses on axle amount.
Intersecting axle effect may occur, fixation magnetic source (that is, the honeybee being included in final use environment due to many sources
Speaker magnets or inductor in cellular telephone) and MR elements design dimensional characteristic.These cross(ed) fields will be to desired quick
The magnetic field felt in axle produces different amounts of intersection field error.
Magnetic Sensor output Processing Algorithm can compensate the skew and unified susceptibility mismatch between axle, and uncompensation relies on
Sensitivity difference in field.Therefore, it is vital to sensor performance to reduce intersecting axle effect.It is desired to have and is effectively increased
The magnetic-field measurement linearity and the system, apparatus and method for making intersecting axle minimum interference.
The content of the invention
Certain embodiments of the present invention, which provides, to be effectively increased the magnetic-field measurement linearity and makes intersecting axle minimum interference
System, apparatus and method.
TMR field sensors include first favour stone (Wheatstone) bridge circuit, the first wheatstone bridge circuitry include by with
It is set to multiple TMR transducers branch roads in sensing magnetic field.Each TMR transducers branch road includes being arranged as multiple activities of m * n matrix
The array of sensing element.Each sensing element include the first ferromagnetic layer (free layer) separated by non magnetic insulating tunnel barrier and
Second ferromagnetic layer (fixed bed).
TMR transducers branch road is also included positioned at adjacent with the second ferromagnetic layer (for example, fixed bed) of each sensing element
Multiple in-built electrical streamlines.Electric current line is coupled to resetting current source, and applies resetting current to built-in current line.Resetted when applying
During electric current, magnetic field is generated on the first ferromagnetic layer (for example, free layer).Direction (or pole depending on the resetting current that is applied
Property), the magnetization of the first ferromagnetic layer is switched to the first alignment or the second alignment by the magnetic field of generation.
In certain embodiments, electric current line is connected up as so that two or more sensing elements have magnetic response, with right
The intersecting axle effect of given field direction in each transducer branch road has opposite contribution.Therefore, from each transducer branch
The overall field response on road is by internal compensation, and there is minimum intersecting axle to disturb for the output of TMR field sensors.
Although the TMR magnetic field sensors used below with TMR elements are discussed to the present invention, the institute of the present invention
There is aspect to be also directly applied for the equipment based on giant magnetoresistance (GMR) technology.Invention disclosed herein is also applied for utilizing soft magnetism
Film senses any magnetic strength survey technology in magnetic field, for example, anisotropic magnetoresistive (AMR), fluxgate, the Hall with flux concentrator
(Hall) sensor.For brevity and clarity, the present invention will be more fully described using TMR technologies as example below.
Brief description of the drawings
The exemplary embodiment of the invention that will be illustrated in refer to the attached drawing.These figures are intended to illustrative rather than limitation
Property.Although the present invention is generally described in the context of these embodiments, it is not intended that incite somebody to action this by doing that
The special characteristic of embodiment that the scope of invention is limited to draw and described.
Fig. 1 depicts the example arrangement general view of TMR magnetic field sensors according to various embodiments of the present invention.
The TMR transducer branch roads field with multiple sensing elements that Fig. 2 depicts according to various embodiments of the present invention passes
The example arrangement general view of sensor.
Fig. 3 depicts the sectional view of single sense element according to various embodiments of the present invention.
Fig. 4 A-4B depict according to various embodiments of the present invention with the electric current line being energized be used for measure magnetic field
X-axis or Y-axis bridge circuit illustrative diagram.
Fig. 5 A-5B depict according to various embodiments of the present invention with the electric current line being energized be used for measure magnetic field
Z axis bridge circuit illustrative diagram.
Fig. 6 depicts the Z axis TMR transducer branch roads field with multiple sensing elements according to various embodiments of the present invention
The example arrangement general view of sensor.
Fig. 7 depicts the bridge circuit of the structure chart with multiple TMR sensing elements according to various embodiments of the present invention
Illustrative diagram.
Fig. 8 depicts the TMR sensing element electric current lines with the first pattern wiring according to various embodiments of the present invention
Example arrangement general view.
Fig. 9 A-9D show the several exemplary of TMR sensing element magnetization orientations according to various embodiments of the present invention
STRUCTURAL OVERVIEW.
Figure 10 is the example of the electric deflection limited on Z axis Magnetic Sensor and magnetic deflection according to various embodiments of the present invention
Property diagram.
Figure 11 depicts exemplary three axis calibrations scheme according to various embodiments of the present invention.
It would be recognized by those skilled in the art that the various implementations and embodiment of the present invention can be according to specifications come real
Trample.All these implementations and embodiment are intended to be included in the scope of the present invention.
As it is used herein, term " comprising ", " including " or its any other variant are intended to nonexcludability bag
Include so that process, method, article or device including element list not only include these elements, but also can include unknown
The other elements of the other elements really listed or these processes, method, article or device inherently.Term " exemplary " " is showing
Use in the sense that example ", rather than used in the sense that " ideal ".
Embodiment
In the following description, for purposes of explanation, detail is elaborated to provide the understanding of the present invention.But
It is that the present invention can be put into practice in the case of some or all of without these details.The implementation of invention described below
Example can be incorporated into multiple different electric components, circuit, equipment and system.Structure and equipment shown in block diagram are pair
The explanation of the exemplary embodiment of the present invention, it is not used as covering the excuse of the extensive teaching of the present invention.Part in each figure it
Between connection be not limited to be directly connected to.On the contrary, the connection between part can be changed by intermediate member, form again
Change, rewiring are otherwise changed.
When this specification quotes " a kind of embodiment " or " embodiment ", it means that with reference to the embodiment institute discussed
Some features, structure, characteristic or the function of description are included in the embodiment of at least one design of the present invention.Therefore, exist
The phrase " in one embodiment " that different places in this specification occur is not formed to the single embodiment of the present invention
Repeatedly quote.
Various embodiments of the present invention, which are used to provide, effectively to be increased the magnetic-field measurement linearity and makes intersecting axle interference minimum
The system, apparatus and method of change.TMR transducers branch road, voltage source and resetting current source therein can be integrated in single part
Go up or include discrete parts.In addition, embodiments of the invention can be applied to diversified technology and method collection.
As described above, magnetic field sensor claimed may mean that TMR magnetic field sensors, GMR magnetic fields pass herein
Sensor, AMR magnetic field sensors, fluxgate magnetic field sensor and/or with flux concentrator Hall magnetic field sensor in one
Kind is a variety of.In addition, herein reluctance sensing element claimed may mean that TMR elements, GMR element, AMR element,
Magnetic flux gating element and/or with flux concentrator Hall element in one or more.
Fig. 1 shows the schematic diagram of TMR magnetic field sensors 100 according to various embodiments of the present invention.Magnetic field sensor
100 the first bridge circuits 200 powered including the voltage source 300 by connecting 300a connections via voltage source, and by optionally multiple
The second circuit 400 that potential field source 500 powers, it can be via reset field source connection 500a connections that this, which optionally resets field source 500,
Current source.First bridge circuit 200 includes multiple TMR transducers branch roads 210.Bridge circuit 200 can be half-bridge circuit, full-bridge electricity
Road or its any combinations.In one embodiment, bridge circuit 200 is the bridge circuit with two circuit branch, and two of which is divided
Bridge output signal 260 between branch is at some intermediate point along branch.TMR transducers branch road 210 serves electrically as resistance
Device, its resistance value change in response to internal magnetic field and external magnetic field.Each transducer branch road 210 has to be connected via reset field source
Meet 500a and be coupled at least one in-built electrical streamline 410 for resetting field source 500.
Fig. 2 depicts the TMR transducer branch roads with multiple sensing elements 211 according to various embodiments of the present invention
210 example arrangement general view.Each TMR transducers branch road 210 includes the multiple movable TMR preferably arranged with matrix layout
Sensing element 211a and 211b array.In one embodiment, each TMR transducers branch road 210 senses including 24 × 24TMR
The array of element 211, its overall dimensions are about 100 × 100um2.The electric current line 410a of each TMR sensing elements 211 and
Electric current flowing in 410b may or may not be identical direction.In one embodiment, TMR sensing elements 211a can
There is opposite current flow direction with the electric current line relative to adjacent TMR sensing elements 211b.
Fig. 3 illustrates the sectional view of single TMR sensing elements 211 according to various embodiments of the present invention.TMR sensings
Part 211 is (fixed by the first ferromagnetic layer 212 (free layer) separated by non magnetic insulating tunnel barrier 216 and the second ferromagnetic layer 214
Layer) composition.In one embodiment, first layer 212 has the direction of magnetization 232 rotated freely in magnetic field.The second layer 214 has
There is the non-rotary fixed reference direction of magnetization 234 when in magnetic field.If the direction of magnetization of two layers is parallel to each other, then tunnel
The resistance of road potential barrier 216 is relatively low.On the contrary, when the direction of magnetization is antiparallel, resistance is of a relatively high.
Therefore, TMR sensing elements 211 by the direction of magnetization 232 due to free magnetic layer in response to field relative to fixation
Magnetic field is converted into electric signal by resistance variations caused by the angle change in the reference magnetization direction 234 of layer.The He of ferromagnetic layer 212
214 can be formed by any suitable ferromagnetic material, such as Ni, Fe, Co or its alloy.Insulating tunnel barrier 216 can be by all
Such as AlOx, MgOx, ZrOx, TiOx, HfOx or its any combination of insulating material composition.
In one embodiment, the first ferromagnetic layer 212 is connected to the first wire 224, and second by the first contact 222
Ferromagnetic layer 214 from the second contact 226 that the above and or below of the second ferromagnetic layer 214 contacts by that can be connected to the second wire
228。
In one embodiment, in-built electrical streamline 410 is positioned at the phase of the second ferromagnetic layer 214 with each TMR sensing elements 211
It is adjacent.Electric current line 410 is connected to so that current impulse is applied to the electric current line 410 of each TMR sensing elements 211.According to each
Kind of embodiment, the connection of electric current line 410 can be order, connect or time multiplexing.In another embodiment
In, individual in-built electrical streamline 420 more than second can be located at adjacent with the first ferromagnetic layer 212.Electric current line 420 may be coupled to identical
Resetting current source 500, the access path by the use of identical or different access path as electric current line 410.Alternately, electric current line
420 may be coupled to different reset sources to provide additional control device.
In one embodiment, the first ferromagnetic layer 212 is configured to have the shape of major axis and short axle.In zero magnetic field,
Major axis arrangement of the direction of magnetization 232 of first ferromagnetic layer 212 along element 211, and two along the axle can be guided in
On any one direction in individual direction.By applying resetting current signal to electric current line 410 and/or electric current line 420, around electricity
Induced field is generated in the environmental area of streamline 410/420.Because first layer 212 has the direction of magnetization for rotating freely and switching
232, therefore the direction of magnetization 232 will be switched to along the direction projected by induced field on its axle.As exemplary in Fig. 3
Schematic diagram, when the electric current in electric current line 410 has the direction relative to the page outwardly, and the electricity in electric current line 420
When stream is with the direction being directed inwardly toward relative to the page, the direction of magnetization 232 points to left side, and it has and reference magnetization direction 234
The component of negative sense alignment, and the direction of magnetization 232 of free layer will be switched to left side；When the electric current in electric current line 410 has
When electric current in the direction being directed inwardly toward and/or electric current line 420 has direction outwardly, the direction of magnetization 232 points to right side,
It has the component being aligned with the forward direction of reference magnetization direction 234, and the direction of magnetization 232 of free layer will be switched to right side.
Fig. 4 A and 4B depict according to various embodiments of the present invention with the electric current line being energized be used for measure magnetic
The illustrative diagram of the X-axis of field or the bridge circuit of Y-axis.Applied when to electric current line (in-built electrical streamline 410 such as shown in Figure 3)
When adding current impulse, magnetic field pulse of the generation with the direction of magnetization 232 on the first ferromagnetic layer.Current impulse depending on application
Polarity, the magnetic field of generation switches in free layer direction 232 with positive right with the reference magnetization direction 234 of the second ferromagnetic layer
The component of accurate or negative sense alignment.Fig. 4 A show the direction of magnetization 232 that substantial forward is aligned in the first ferromagnetic layer 212, and
Fig. 4 B show the direction of magnetization 232 of the substantially negative sense alignment in the first ferromagnetic layer 212.
Fig. 5 A and 5B depict according to various embodiments of the present invention with the electric current line being energized be used for measure magnetic
The illustrative diagram of the bridge circuit of the Z axis of field.Surveyed for Z axis magnetic strength, each TMR sensing elements 211 integrate at least one magnetic
Logical guiding device 218, it can be located at similar or different coupling for each sensing element.Magnetic flux guiding device 218 is by high magnetic
High aspect ratio vertical bar made of conductance magnetic material, its end terminate proximal to the TMR sensings in each corresponding bridge branch road
The opposite edges of part.In one embodiment, magnetic flux guiding device 218 can deposit or be arranged in first (freedom) ferromagnetic layer 212
Above and or below.The trapped flux amount from the field of application for being oriented to Z-direction of magnetic flux guiding device 218, and field wire is curved
The bent horizontal component into the end with close magnetic flux guiding device 218, it rotates the direction of magnetization 232 of TMR sensing elements.Figure
5A and 5B shows two exemplary Z axis bridge configurations, the wherein difference of the direction of magnetization 232 of TMR sensing elements.In given bridge branch road
While the interior direction of magnetization 232 can refer in the opposite direction, each bridge branch road can also refer in the opposite direction.
Fig. 6 depicts the Z axis TMR transducer branch with multiple sensing elements 611 according to various embodiments of the present invention
The example arrangement general view on road 610.Each Z axis TMR transducers branch road 610 includes the multiple work preferably arranged with matrix layout
Dynamic Z axis TMR sensing elements 611a and 611b array.In one embodiment, each Z axis TMR transducers branch road 610 includes 60
The array of × 40Z axle TMR sensing elements 611, its overall dimensions is about 150 × 200um2.Although magnetic flux guiding device 218 is shown
For on right side and below Z axis TMR sensing elements 611, as shown in Figure 6 it should be appreciated that magnetic flux guiding device 218
Left side and/or the top of Z axis TMR sensing elements 611 can be located at.By the way that magnetic flux guiding device is placed on into the relative of sensing element
It on side and opposite face (that is, right side, following and left side, top), can double Z axis susceptibility.Each Z axis TMR sensing elements
Electric current flowing in 611 electric current line 410 may or may not be identical direction.In one embodiment, Z axis TMR
Sensing element 611a can have the inverse current side relative to adjacent Z axis TMR sensing elements 611b in electric current line 410a
To.
Fig. 7 depicts the bridge circuit of the structure chart with multiple TMR sensing elements according to various embodiments of the present invention
Illustrative diagram.Bridge circuit 200 includes four TMR transducings for forming the wheatstone bridge circuitry with bridge output signal 260
Device branch road 210.Each transducer branch road 210 is included with the array of the TMR sensing elements 211 of sensing element matrix layout.One
The in-built electrical streamline 410 of each TMR sensing elements 211 of TMR transducers branch road 210 is connected up to form second circuit 400.
Fig. 8 depicts the TMR sensing element electric currents line 410 with the first pattern wiring according to various embodiments of the present invention
Example arrangement general view.Electric current line 410 is connected up to form the road of opposite direction in the adjacent column in sensing element matrix
Footpath.This wiring pattern ensure that for the given field direction in each transducer branch road in TMR sensor, two or more
The magnetic response of individual sensing element 211 has the opposite contribution from intersecting axle effect.Although each path covers as shown in Figure 8
One row it should be appreciated that the various other configurations in path can be utilized in a similar way, and such change is still
Within the scope of the invention.
Fig. 9 A-9D are depicted due to the example arrangement general view of TMR sensing elements magnetization arrangement caused by the wiring of electric current line,
Further to illustrate the additional embodiment of the present invention.For the sake of scheming to understand, electric current line is not shown directly.Alternatively, TMR feels
Survey the wiring pattern of the indicator current line of the direction of magnetization 232 of the first layer (free layer) 212 of element 211.It only used 4 × 4 yuan
Prime matrix is for illustration purposes.Wiring pattern disclosed in Fig. 8 is applied to the whole transducer branch road of TMR sensor.
In figure 9 a, there is the electric current line of the sensing element 211 in same row identical direction of current flow (such as to arrange
In C1 and C3).The electric current line of sensing element at one row has opposite electric current with the electric current line of the sensing element at adjacent column
Flow direction.For example, the electric current flowing in row C1 is opposite with the electric current flowing in row C2.
In figures 9 b and 9, the electric current line of each sensing element has the electric current line of sensing element adjacent with all row and columns opposite
Direction of current flow.For example, R2C2 (the second row secondary series) place sensing element in associated electric current line relative to
All adjacent sensing elements (in R1C2, R2C1, R3C2 and R2C3 opening position) have opposite direction of current flow.Sensing
The electric current line of the electric current line of part and the sensing element at diagonal adjacent sensing element has identical direction of current flow.Example
Such as, the sensing element of the electric current flowing in the sensing element of R2C2 opening positions and R1C1 and R3C3 opening positions has identical electric current
Flow direction.
In Fig. 9 C, there is the electric current line of the sensing element in continuous two row identical direction of current flow (to be such as expert at
In R1 and R2).Moreover, the electric current line of the sensing element at the continuous row of the first two is relative at ensuing two continuous rows
The electric current line of sensing element there is opposite direction of current flow.
In Fig. 9 D, there is the electric current line of the sensing element in two continuation columns identical direction of current flow (such as to exist
Arrange in C1 and C2).Moreover, the electric current line of the sensing element at the first two continuation column is relative in ensuing two continuation columns
The electric current line of the sensing element at place has opposite direction of current flow.
Although four kinds of different types of electric current wiring patterns are illustrate only in Fig. 9 A-9D it should be appreciated that can
To utilize the wiring pattern of various other types in a similar way, and these changes are still within the scope of the invention.Although
In the ideal case, these patterns generate equivalent population (population) for two kinds of sensing element orientations, right
In the case of the different spaces arrangement most preferably eliminated, dependent on other system restrictions, population is probably incoordinate.
It can be further enlarged beyond transducer branch road rank for the magnetized bipolarity arrangement of Z axis that intersecting axle reduces
Intersecting axle reduce.Complete Z intersecting axles susceptibility calibration is it is understood that the mistake of the bipolarity magnetization arrangement from Z axis sensor
The functional form of poor residual error.For sensing element of each transducer branch route with common magnetic flux guiding device direction of its jackshaft
The Z axis sensor of composition, the intersecting axle functional form of Z axis sensor is substantially parabolic shape, and another on an axle
It is linear on individual axle.For accurate compensation, it is necessary to which Z axis electric deflection, Z axis magnetic deflection, Z axis susceptibility are to the dependence of Y-axis field
The parameter of parabola interpolation and Z axis susceptibility to the linear interpolation of the dependence of X-axis field.Furthermore, it is possible to by determining that X-axis is always inclined
Move with susceptibility and Y-axis total drift and susceptibility to calibrate X-axis and Y-axis sensor.
Figure 10 shows the electric deflection and magnetic deflection that limit on Z axis Magnetic Sensor according to various embodiments of the present invention
Graphical representation of exemplary.In Fig. 10, Z axis Magnetic Sensor output voltage is plotted as the function in Z axis magnetic field, wherein existing special by covering
Two different values in intersecting axle (X-axis or Y-axis) magnetic field of Carlow (Monte-Carlo) emulation.Line 901 and zero crossing axle magnetic field
It is corresponding, and line 902 is corresponding with a certain intersecting axle magnetic field.Both line 901 and 902 deviates original due to electric deflection and magnetic deflection
Point.Line 901 and 902 has crosspoint 910, and electric deflection 912 is vertical displacement of the crosspoint 910 from origin.Magnetic deflection 914
Vertical displacement between point 910 and 920 is corresponding, and point 910 and 920 is the point on line 901 or line 902 with zero Z axis magnetic field.Magnetic
Skew 914 is dependent on actual intersecting axle (X-axis or Y-axis) magnetic value.
After electric deflection 912 and magnetic deflection 914 is obtained, electric deflection, magnetic deflection are being considered and from X-axis and Y-axis
After the cross jamming in magnetic field, real magnetic field value can be extracted from Z axis output data.Z axis calibration process includes electric deflection
Calibration, susceptibility and the sequential steps of the calibration of cross sensitivity degree and magnetic deflection calibration.In one embodiment, cross sensitivity
Degree calibration by by Z axis sensor output voltage be multiplied by nominal susceptibility and divided by polynomial function realize, the multinomial
The constant term of function includes the susceptibility that measures, and in Y-axis field be secondary and for once in X-axis field.For X-axis and Y
Secondary and once the determination of the multinomial dependence of axle field depends on the symmetry of Z axis sensor placement, and can invert,
Or it may rely on relative to the symmetry that the final Z axis of X-axis and the restriction of Y-axis magnetic field is laid out and utilize the multinomial of not homogeneous
Formula.The Y-axis field and X-axis field utilized must be compensated by respective offsets and the susceptibility calibration of their own first, and it is certainly
Oneself respective offsets and susceptibility calibration is programmed into chip according to the measurement performed during final test.It is more in order to determine
Item formula, in the examples described above, adopted preferably for Y-axis using the Z axis susceptibility test at three different field values and for X-axis
With the Z axis susceptibility test at two different field values, but can be according to the fitting of the sub- population to sensor using fewer
The field value of amount extracts the common fitting function suitable for all the sensors.
Figure 11 shows exemplary three axis calibrations scheme according to various embodiments of the present invention.X-axis sensor exports (X
Initial data) (step 1010) and X-axis susceptibility are calibrated by X-axis electric deflection calibrate (step 1012) to extract actual X
Axle magnetic field (step 1013).Similarly, Y-axis sensor output (Y initial data) by Y-axis electric deflection calibrate (step 1020) and
Y-axis susceptibility calibrates (step 1022) to extract actual Y-axis magnetic field (step 1023).
For Z axis, Z axis sensor exports (Z initial data) and calibrates (step 1030), Z axis susceptibility by Z axis electric deflection
(step 1032) and additional Z axis magnetic deflection calibration (step 1034) are calibrated, to extract actual Z axis magnetic field (step
1035).Except in addition to the Rreceive output signal (step 1031) of Z axis electric deflection calibration steps 1030, the calibration of Z axis susceptibility (walks
The rapid input for 1032) also receiving actual X-axis magnetic field (step 1013) and actual Y-axis magnetic field (step 1023), to generate
Intersecting axle susceptibility calibration signal exports (step 1033), and then it is by Z axis magnetic deflection calibration (step 1034), to extract
Actual Z axis magnetic field (step 1035).
It would be recognized by those skilled in the art that various implementations can be realized in described framework, it is all these
Implementation is within the scope of the present invention.For the sake of being aware and understood, it has been described that to the preceding description of the present invention.
This, which is not intended as, limits the invention to disclosed precise forms.Various repair can be carried out in the scope and identity property of application
Change.
Claims (20)
1. a kind of magnetic field sensor, including：
Multiple transducer branch roads, it is coupled together as sensing first circuit in magnetic field, wherein each transducer branch road is including more
Individual reluctance sensing element；And
Second circuit, including individual electric current line more than first, wherein each electric current line more than described first in individual electric current line with it is described more
Corresponding multiple reluctance sensing elements of transducer branch road in individual transducer branch road are adjacent；
Wherein, it is every in the transducer branch road when at least one electric current line in individual electric current line more than described first is energized
The magnetization of individual reluctance sensing element is aligned or is aligned in second direction opposite to the first direction in a first direction,
And wherein, it is right in the first direction and a second direction to be configurable to generate magnetization for the wiring pattern of at least one electric current line
The equivalent population of accurate reluctance sensing element.
2. magnetic field sensor as claimed in claim 1, wherein the multiple reluctance sensing element be arranged in multiple row and
In the sensing element matrix of multiple rows, and
Each electric current line in wherein described more than first individual electric current line, which is configurable to generate, makes the multiple reluctance sensing element
Magnetize the magnetic field of alignment.
3. magnetic field sensor as claimed in claim 2, wherein, when at least one electric current line is energized, it is described at least
The wiring pattern of one electric current line is configurable to generate the magnetized of the reluctance sensing element that makes the first row in the multiple row
Be aligned with and the adjacent row of the first row in reluctance sensing element the opposite magnetic field of magnetization.
4. magnetic field sensor as claimed in claim 2, wherein, when at least one electric current line is energized, it is described at least
The wiring pattern of one electric current line is configurable to generate the first row that makes in the multiple row, first row in the multiple row
The second magnetic-resistance sensing in the alignment of first direction of magnetization of the first reluctance sensing element row adjacent with the first row and first row
The direction of magnetization of element it is opposite and make first direction of magnetization with and the adjacent row of the first row, first row in the 3rd magnetic resistance
The opposite magnetic field of the direction of magnetization of sensing element.
5. magnetic field sensor as claimed in claim 2, wherein, when at least one electric current line is energized, it is described at least
The wiring pattern of one electric current line is configurable to generate alignment and the direct neighbor for the M row reluctance sensing elements for making first group of adjoining
Second group of adjoining M row reluctance sensing elements reference magnetization magnetic field in opposite direction.
6. magnetic field sensor as claimed in claim 2, wherein, when at least one electric current line is energized, it is described at least
The wiring pattern of one electric current line is configurable to generate the reluctance sensing element of the first pair of adjacent column made in the multiple row
Be aligned with and the adjacent second pair of adjacent column of first pair of adjacent column in reluctance sensing element reference magnetization it is in opposite direction
Magnetic field.
7. magnetic field sensor as claimed in claim 2, wherein, when at least one electric current line is energized, it is described at least
The wiring pattern of one electric current line is configurable to generate alignment and the direct neighbor for the N row reluctance sensing elements for making first group of adjoining
Second group of adjoining N row reluctance sensing elements reference magnetization magnetic field in opposite direction.
8. magnetic field sensor as claimed in claim 1, wherein each magnetic-resistance sensing member in the multiple reluctance sensing element
Part includes the first ferromagnetic layer and the second ferromagnetic layer separated by non magnetic insulative barriers.
9. magnetic field sensor as claimed in claim 8, wherein first ferromagnetic layer is included in the magnetic rotated freely in magnetic field
Change direction, and the magnetization of wherein described second ferromagnetic layer is reference magnetization direction.
10. magnetic field sensor as claimed in claim 1, wherein the multiple reluctance sensing element includes one or more tunnels
Reluctance sensing element, giant magnetoresistance sensing element and/or anisotropic magnetoresistive sensing element.
11. magnetic field sensor as claimed in claim 1, in addition to：
Include the second circuit of more than second individual electric current lines, wherein each electric current line more than described second in individual electric current line with it is described more
Corresponding reluctance sensing element in individual reluctance sensing element is adjacent.
12. magnetic field sensor as claimed in claim 11, wherein at least one electric current line more than described second in individual electric current line
The lower section for the electric current line being positioned at more than described first in individual electric current line.
13. magnetic field sensor as claimed in claim 11, wherein at least one electric current line more than described second in individual electric current line
The top for the electric current line being positioned at more than described first in individual electric current line.
14. magnetic field sensor as claimed in claim 1, wherein at least one magnetic resistance sense in the multiple reluctance sensing element
Surveying element includes at least one magnetic flux guiding device.
15. magnetic field sensor as claimed in claim 14, wherein at least one magnetic flux guiding device is to include high magnetic permeability
The high aspect ratio vertical bar of magnetic material.
16. magnetic field sensor as claimed in claim 14, wherein at least one magnetic flux guiding device be positioned at it is at least one
The top of reluctance sensing element.
17. magnetic field sensor as claimed in claim 14, wherein at least one magnetic flux guide be positioned at it is at least one
The lower section of reluctance sensing element.
18. magnetic field sensor as claimed in claim 1, wherein first circuit is half-bridge circuit or full-bridge circuit.
19. a kind of sensing magnetic fields system, including：
Multiple transducer branch roads, it is coupled together as sensing first circuit in magnetic field, wherein each transducer branch road is including more
Individual reluctance sensing element；And
Second circuit, including individual electric current line more than first, wherein each electric current line more than described first in individual electric current line with it is described more
Corresponding multiple reluctance sensing elements of transducer branch road in individual transducer branch road are adjacent,
Wherein described sensing magnetic fields system is configured as reducing and disturbed as the intersecting axle of electric deflection and the function of magnetic deflection.
20. sensing magnetic fields system as claimed in claim 19, wherein the sensing magnetic fields system is additionally configured to pass through application
Polynomial function reduces intersecting axle interference, and the number of wherein described polynomial function is done depending on the intersecting axle
Disturb.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
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| US201562154210P | 2015-04-29 | 2015-04-29 | |
| US62/154,210 | 2015-04-29 | ||
| US15/134,134 US9910106B2 (en) | 2015-04-29 | 2016-04-20 | Magnetic field sensor with increased linearity |
| US15/134,134 | 2016-04-20 | ||
| PCT/US2016/029594 WO2016176349A1 (en) | 2015-04-29 | 2016-04-27 | Magnetic field sensor with increased linearity |
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| CN107534083A true CN107534083A (en) | 2018-01-02 |
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| CN201680023888.8A Pending CN107534083A (en) | 2015-04-29 | 2016-04-27 | Magnetic field sensor with the increased linearity |
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| US (2) | US9910106B2 (en) |
| CN (1) | CN107534083A (en) |
| WO (1) | WO2016176349A1 (en) |
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| CN111505544B (en) * | 2020-04-22 | 2021-07-13 | 西安交通大学 | TMR magnetic field sensor capable of reconstructing sensitive direction and preparation method |
| US11422206B2 (en) | 2020-11-25 | 2022-08-23 | Robert Bosch Gmbh | Magnetic field sensor with optimized coil configurations for flux guide reset |
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| US20160320459A1 (en) | 2016-11-03 |
| US10168397B2 (en) | 2019-01-01 |
| US9910106B2 (en) | 2018-03-06 |
| WO2016176349A1 (en) | 2016-11-03 |
| US20180156876A1 (en) | 2018-06-07 |
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