CN107516673A - GaN semiconductor devices and its preparation method and application - Google Patents
GaN semiconductor devices and its preparation method and application Download PDFInfo
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- CN107516673A CN107516673A CN201710702142.6A CN201710702142A CN107516673A CN 107516673 A CN107516673 A CN 107516673A CN 201710702142 A CN201710702142 A CN 201710702142A CN 107516673 A CN107516673 A CN 107516673A
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- Prior art keywords
- gallium nitride
- layer
- nitride layer
- aluminium
- semiconductor devices
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 238000002360 preparation method Methods 0.000 title claims description 7
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 151
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 42
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000004411 aluminium Substances 0.000 claims abstract description 42
- 239000000956 alloy Substances 0.000 claims abstract description 29
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 29
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000002131 composite material Substances 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 230000003993 interaction Effects 0.000 claims description 3
- 229910017083 AlN Inorganic materials 0.000 abstract description 16
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 8
- 239000012528 membrane Substances 0.000 abstract description 6
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 4
- 238000003780 insertion Methods 0.000 abstract description 2
- 230000037431 insertion Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
Abstract
The invention discloses a kind of GaN semiconductor devices, including：Substrate；The crystal seed layer being arranged on the substrate；The cushion being arranged on the crystal seed layer；The gallium nitride layer being arranged on the cushion；The AlxGaN1 xN layers being arranged on the gallium nitride layer；The AlxGaN1 xN layers include stacking gradually in the first aluminum gallium nitride layer on the gallium nitride layer, aln layer and the second aluminum gallium nitride layer.The structure of above-mentioned GaN semiconductor devices, when growth two-dimensional electron gas (2DEG) uses aluminium gallium nitride alloy film, effectively utilize aluminium gallium nitride alloy/aluminium nitride/aluminium gallium nitride alloy composite membrane as insertion membrane structure；The thickness of remaining aluminium gallium nitride alloy in the follow-up etch process carried out for gate contact can be effectively controlled, improves in transistor (MISFET Transistor) characteristic and spreads problem.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of GaN semiconductor devices and preparation method thereof and answers
With.
Background technology
10% huge market of the whole semi-conductor market of electric semiconductor market share, but electric semiconductor city before
Field is based on the power device of utilization silicon.Past 20 years, between 10 years, the electric power that Si power device improves 5~6 times was close
Degree, it is difficult to expect further to improve in performance.
Compared with silicon and GaAs, gallium nitride has that band gap is wide (Eg=3.4eV), stablizes spies such as (700 DEG C) at high temperature
Sign.Compared to silicon electric semiconductor, gallium nitride electric semiconductor has low temperature resistant characteristic, can not only reduce as electric power is partly led
Caused by body-loss of electric brake, the advantages that system cost electric power is minimized can also be accomplished.By gallium nitride semiconductor device
Part minimizes, high voltage, high speed electric brake, it is possible to achieve low loss, efficient electrical device of future generation, can meet industry
With, power network, the demand of information Office of the Telecommunications Authority.
But because gallium nitride electric semiconductor has normal pass problem, gallium nitride electric power during which can not be used alone and partly lead
Body, to be used together with Si power device.In this way, act the anode structure for having said function using with normally opened.
Normally opened gallium nitride semiconductor is just under development, the GaN high electron migration that wherein gallium nitride stacked crystal layer structure includes
The degree of applying flexibly of rate transistor also steps up.
To embody the breakdown voltage utilized in gallium nitride electrical device, and it is the gallium nitride layer for growing high-quality；
Grown on silicon substrate, e.g., after the inculating crystal layer such as aluminium nitride, the quality for improving cushion plays an important role.That is, apply flexibly using silicon as
The two dimension electricity of the undoped gallium nitride epitaxial layer/aluminium gallium nitride alloy formed on aluminium nitride inculating crystal layer/aluminium gallium nitride alloy cushion of substrate
The quality of sub- gas (2DEG) structure and management are critically important.
The content of the invention
Based on this, it is an object of the invention to provide a kind of structure of GaN semiconductor devices.
Specific technical scheme is as follows：
A kind of GaN semiconductor devices, including：
Substrate；
The crystal seed layer being arranged on the substrate；
The cushion being arranged on the crystal seed layer；
The gallium nitride layer being arranged on the cushion；
The AlxGaN1-xN layers being arranged on the gallium nitride layer；
The AlxGaN1-xN layers include stacking gradually in the first aluminum gallium nitride layer, aln layer on the gallium nitride layer
And second aluminum gallium nitride layer.
In wherein some embodiments, the aluminium content in second aluminum gallium nitride layer is less than or equal to first gallium nitride
Aluminium content in aluminium lamination.
In wherein some embodiments, wherein 0<x<1.
In wherein some embodiments, the thickness of the AlxGa1-xN layers is 3nm~50nm.
In wherein some embodiments, the material of the crystal seed layer is aluminium nitride, gallium nitride or aluminium gallium nitride alloy.
In wherein some embodiments, the material of the cushion is aluminium nitride, gallium nitride or aluminium gallium nitride alloy.
In wherein some embodiments, the gallium nitride layer is Carbon deposition gallium nitride layer, undoped gallium nitride layer or compound
Layer, Carbon deposition gallium nitride layer and undoped gallium nitride layer of the composite bed for multilayer interaction cascading.
In wherein some embodiments, the thickness of the crystal seed layer is 100nm~200nm；The thickness of the cushion is
0.5um~10um；The thickness of the gallium nitride layer is 0.1um~1um.
It is a further object of the present invention to provide the preparation method of above-mentioned GaN semiconductor devices.
The preparation method of above-mentioned GaN semiconductor devices, comprises the following steps：
Obtain substrate；
Crystal seed layer is formed on the substrate；
Cushion is formed on the crystal seed layer；
Gallium nitride layer is formed on the cushion；
AlxGaN1-xN layers are formed on the gallium nitride layer；
The AlxGaN1-xN layers include stacking gradually in the first aluminum gallium nitride layer, aln layer on the gallium nitride layer
And second aluminum gallium nitride layer.
It is a further object of the present invention to provide a kind of semiconductor device, including above-mentioned GaN semiconductor devices.
To embody the breakdown voltage utilized in gallium nitride electrical device, and it is the gallium nitride layer for growing high-quality.For
Two-dimensional electron gas (2DEG) structure is formed, is used undoped gallium nitride/aluminium gallium nitride alloy (u-GaN/AlGaN layer)；To be formed
Transistor (MISFET Transistor) structure, in subsequent technique, especially in the etch process for gate contact, nitridation
The etching degree of gallium aluminium can trigger the difference in thickness of aluminium gallium nitride alloy after etching.Thus, transistor (MISFET is caused
Transistor the problem of bad) is spread.
The structure of above-mentioned GaN semiconductor devices, when growth two-dimensional electron gas (2DEG) uses aluminium gallium nitride alloy film, aluminum nitride thin
Membrane structure, i.e. the composite membrane of the aluminium gallium nitride alloy of the first aluminium gallium nitride alloy/aluminium nitride/second.In subsequent gate contact etch process,
Because aluminium gallium nitride alloy film combination aluminium nitride film etch quantity is poor, when removing second aluminium gallium nitride alloy, play aluminium nitride film
Etch-stop function, the thickness of first aluminum gallium nitride can be controlled to a certain extent, improve dissipating for MISFET transistor characteristics
Cloth.
Brief description of the drawings
Fig. 1 is the structure of existing GaN semiconductor devices；
Fig. 2 is the situation that aluminum gallium nitride all etches in existing GaN semiconductor devices；
Fig. 3 is the situation that aluminium gallium nitride alloy layer segment etches in existing GaN semiconductor devices；
Fig. 4 be an embodiment GaN semiconductor devices structural representation (101, substrate；102nd, crystal seed layer；103rd, buffer
Layer；104th, gallium nitride layer；105th, the first aluminum gallium nitride layer；106th, aln layer；107th, the second aluminum gallium nitride layer)；
Fig. 5 is the situation after the structure etching of an embodiment GaN semiconductor devices；
Fig. 6 is GaN, AlGaN, AlN etch-rate curve.
Embodiment
For the ease of understanding the present invention, the present invention will be described more fully below.But the present invention can be with perhaps
More different form is realized, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is to make
Understanding more thorough and comprehensive to the disclosure.
Unless otherwise defined, all of technologies and scientific terms used here by the article is with belonging to technical field of the invention
The implication that technical staff is generally understood that is identical.Term used in the description of the invention herein is intended merely to description tool
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
The arbitrary and all combination of the Listed Items of pass.
A kind of GaN semiconductor devices, including：
Substrate 101；
The crystal seed layer 102 being arranged on the substrate；
It should be understood that the material of the crystal seed layer 102 can be aluminium nitride, gallium nitride or aluminium gallium nitride alloy；
The cushion 103 being arranged on the crystal seed layer 102；
It should be understood that the material of the cushion 103 can be aluminium nitride, gallium nitride or aluminium gallium nitride alloy；
The gallium nitride layer 104 being arranged on the cushion 103；
It should be understood that the gallium nitride layer 104 is Carbon deposition gallium nitride layer, undoped gallium nitride layer or composite bed, institute
State the Carbon deposition gallium nitride layer and undoped gallium nitride layer that composite bed is multilayer interaction cascading；
The AlxGaN1-xN layers being arranged on the gallium nitride layer；Wherein 0<x<1；
The AlxGaN1-xN layers include stacking gradually in the first aluminum gallium nitride layer 105 on the gallium nitride layer, nitridation
The aluminum gallium nitride layer 107 (as shown in Figure 4) of aluminium lamination 106 and second.
The first aluminum gallium nitride contacted with gallium nitride is to form 2DEG, the second aluminium nitride contacted with source/drain
Gallium layer is to improve source electrode to aluminium gallium nitride alloy, the engagement capacity to drain to aluminium gallium nitride alloy.
The aluminium content that aluminium content in second aluminum gallium nitride layer is less than or equal in first aluminum gallium nitride layer.
The preparation method of above-mentioned GaN semiconductor devices, comprises the following steps：
Obtain substrate；
Crystal seed layer (seed layer) is formed on the substrate；The material of the crystal seed layer may be selected from aluminium nitride AlN, nitrogen
Change gallium GaN or aluminium gallium nitride alloy AlGaN；
Process parameter control exists：Temperature is at 1000~1150 DEG C, and thickness is in 100nm~200nm.
Cushion (buffer layer) is formed on the aln seed crystal layer；The material of the cushion may be selected from
AlN, gallium nitride GaN or aluminium gallium nitride alloy AlGaN, it can also be made up of the single film of gallium nitride or aluminium gallium nitride alloy/gallium nitride superlattices.
Process parameter control is formed at 1000~1150 DEG C of temperature, thickness 0.5um~10um.
Gallium nitride layer (GaN layer) is formed on the cushion；Process parameter control in 1000~1150 DEG C of temperature,
Formed under thickness 0.1um~1um.
AlxGaN1-xN layers are formed on the gallium nitride layer；Process parameter control is in 1000~1150 DEG C of temperature, thickness
Formed under 3nm~50nm, Al content 0<x<1.
The AlxGaN1-xN layers include stacking gradually in the first aluminum gallium nitride layer, aln layer on the gallium nitride layer
And second aluminum gallium nitride layer, wherein the aluminium content in second aluminum gallium nitride layer is less than or equal to first aluminum gallium nitride layer
In aluminium content.
The structure of above-mentioned GaN semiconductor devices, when growth two-dimensional electron gas (2DEG) uses aluminium gallium nitride alloy film, effectively utilize
Aluminium gallium nitride alloy/aluminium nitride/aluminium gallium nitride alloy composite membrane as insertion membrane structure；Can be effectively controlled subsequently for gate contact and
The thickness (as shown in Figure 5, Figure 6) of remaining aluminium gallium nitride alloy in the etch process of progress, improve transistor (MISFET
Transistor) problem is spread in characteristic.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope that this specification is recorded all is considered to be.
Embodiment described above only expresses the several embodiments of the present invention, and its description is more specific and detailed, but simultaneously
Can not therefore it be construed as limiting the scope of the patent.It should be pointed out that come for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
- A kind of 1. GaN semiconductor devices, it is characterised in that including：Substrate；The crystal seed layer being arranged on the substrate；The cushion being arranged on the crystal seed layer；The gallium nitride layer being arranged on the cushion；The AlxGaN1-xN layers being arranged on the gallium nitride layer；The AlxGa1-xN layers include stack gradually in the first aluminum gallium nitride layer on the gallium nitride layer, aln layer and Second aluminum gallium nitride layer.
- 2. GaN semiconductor devices according to claim 1, it is characterised in that the aluminium in second aluminum gallium nitride layer contains The aluminium content that amount is less than or equal in first aluminum gallium nitride layer.
- 3. GaN semiconductor devices according to claim 1 or 2, it is characterised in that wherein 0<x<1.
- 4. GaN semiconductor devices according to claim 1 or 2, it is characterised in that the thickness of the AlxGa1-xN layers is 3nm~50nm.
- 5. GaN semiconductor devices according to claim 1 or 2, it is characterised in that the material of the crystal seed layer is nitridation Aluminium, gallium nitride or aluminium gallium nitride alloy.
- 6. GaN semiconductor devices according to claim 1 or 2, it is characterised in that the material of the cushion is nitridation Aluminium, gallium nitride or aluminium gallium nitride alloy.
- 7. GaN semiconductor devices according to claim 1 or 2, it is characterised in that the gallium nitride layer nitrogenizes for Carbon deposition Gallium layer, undoped gallium nitride layer or composite bed, the composite bed are the Carbon deposition gallium nitride layer of multilayer interaction cascading and undoped Gallium nitride layer.
- 8. GaN semiconductor devices according to claim 1 or 2, it is characterised in that the thickness of the crystal seed layer is 100nm ~200nm；The thickness of the cushion is 0.5um~10um；The thickness of the gallium nitride layer is 0.1um~1um.
- 9. the preparation method of the GaN semiconductor devices described in claim any one of 1-8, it is characterised in that comprise the following steps：Obtain substrate；Crystal seed layer is formed on the substrate；Cushion is formed on the crystal seed layer；Gallium nitride layer is formed on the cushion；AlxGaN1-xN layers are formed on the gallium nitride layer；The AlxGaN1-xN layers include stack gradually in the first aluminum gallium nitride layer on the gallium nitride layer, aln layer and Second aluminum gallium nitride layer.
- 10. a kind of semiconductor device, it is characterised in that including the GaN semiconductor devices described in claim any one of 1-8.
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| CN201710702142.6A CN107516673A (en) | 2017-08-16 | 2017-08-16 | GaN semiconductor devices and its preparation method and application |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112310210A (en) * | 2019-08-02 | 2021-02-02 | 联华电子股份有限公司 | High electron mobility transistor |
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| JP2008244324A (en) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | Etching method of nitride compound semiconductor layer, and semiconductor device manufactured using the method |
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| US20130112986A1 (en) * | 2011-11-09 | 2013-05-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Gallium Nitride Semiconductor Devices and Method Making Thereof |
| CN207503986U (en) * | 2017-08-16 | 2018-06-15 | 英诺赛科（珠海）科技有限公司 | GaN semiconductor devices |
-
2017
- 2017-08-16 CN CN201710702142.6A patent/CN107516673A/en active Pending
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|---|---|---|---|---|
| CN101002332A (en) * | 2004-06-24 | 2007-07-18 | 日本电气株式会社 | Semiconductor device |
| CN101009325A (en) * | 2006-01-27 | 2007-08-01 | 松下电器产业株式会社 | Transistor |
| JP2008244324A (en) * | 2007-03-28 | 2008-10-09 | Furukawa Electric Co Ltd:The | Etching method of nitride compound semiconductor layer, and semiconductor device manufactured using the method |
| US20100270559A1 (en) * | 2007-11-19 | 2010-10-28 | Nec Corporation | Field effect transistor and process for manufacturing same |
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