CN107508020B - Resonator and Elliptic Function Type low-pass filter - Google Patents

Resonator and Elliptic Function Type low-pass filter Download PDF

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Publication number
CN107508020B
CN107508020B CN201710872078.6A CN201710872078A CN107508020B CN 107508020 B CN107508020 B CN 107508020B CN 201710872078 A CN201710872078 A CN 201710872078A CN 107508020 B CN107508020 B CN 107508020B
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resonator
pass filter
type low
function type
elliptic function
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CN107508020A (en
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江顺喜
周方平
殷实
梁国春
项显
赵媛媛
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Pivotone Communication Technologies Inc
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Pivotone Communication Technologies Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters
    • H01P1/207Hollow waveguide filters

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Abstract

The invention discloses a resonator. The resonator comprises an equivalent capacitor structure and an equivalent inductor structure; the equivalent capacitor structure comprises a U-shaped metal structure and a metal partition plate which is equal to the U-shaped metal structure in height but smaller in thickness, the metal partition plate is arranged in the middle of the U-shaped metal structure, and the thickness direction of the U-shaped metal structure is equally divided into two symmetrical parts; the equivalent inductance structure is a metal rod, and the lower end of the equivalent inductance structure is fixedly connected with the upper edge of the metal partition plate. The invention also discloses an elliptic function type low-pass filter. The elliptic function type low-pass filter adopts the resonator with a special structure, the whole filter does not need tuning, the required parts are few, a plurality of parts adopt a common structure, the elliptic function type low-pass filter has the advantages of compact integral structure and easy manufacture and assembly, and has the characteristics of small insertion loss, large power capacity and good out-of-band rejection, and is particularly suitable for high-power application occasions with lower frequency.

Description

Resonator and Elliptic Function Type low-pass filter
Technical field
The present invention relates to a kind of resonator for low-pass filter and the Elliptic Function Type low pass based on the resonator Filter.
Background technique
In the electronic device, no matter using which kind of frequency synthesis mode, due to its inherent characteristic, harmonic wave and miscellaneous can all be generated It dissipates, these harmonic waves and the spuious normal work that electronic equipment can be interfered after amplifier amplifies.In addition modern radar and communication Equipment increases the peak power and mean power of output in order to pursue farther operating distance, but high power transmitter is inevitable Excessively high harmonic power can be brought, the harmonic energy meeting severe jamming of these high-power transmitters even burns electronic equipment.Separately The outer underproof electronic equipment of output harmonic wave can not also obtain the factory licensing of Wireless Management Committee.Therefore it must penetrate Frequency front end filters out the harmonic spectrum energy of electronic equipment output.
The low-pass filter for filtering out harmonic wave currently used for waveguide radio frequency front end mainly has: coaxial sugarcoated haws shape low-pass filtering Device.The low-pass filter of sugarcoated haws structure is functional, and structure is simple, is widely used.
But since the transmission response curve that the low-pass filter of sugarcoated haws form does not have is Chebyshev's response curve, do not have Transmission zero, it is therefore necessary to many ranks that could obtain preferable Out-of-band rejection characteristic.This results in the volume of filter larger, The especially lower frequency range of frequency, such as several hundred MHz frequency ranges.More additionally, due to the order of filter, Insertion Loss is big, can deteriorate system Performance.In powerful application, since Insertion Loss is big, caused loss is big, and calorific value is big, may burn entire filtering Device.
In order to overcome the shortcomings of the low-pass filter of conventional sugar cucurbit form, there is researcher to propose a kind of novel low pass Filter, the frequency response curve of the low-pass filter meet elliptic function curve (have outside elliptic function response curve band and Equal number of transmission zero in passband), therefore it is called Elliptic Function Type low-pass filter.For example, Chinese invention patent CN102354778 discloses a kind of Elliptic Function Type low pass filtering access, metal cavity be provided with it is multiple be sequentially connected it is logical Sub- chamber is equipped with resonant column between two neighboring sub- chamber, is equipped with stub above resonant column, stub corresponds to be set at each resonant column There is through-hole, each resonant column has a tuning screw to pass through corresponding through-hole and gos deep into the resonant column so that tuning screw is humorous with this Shake column capacitive coupling, and stub both ends are respectively formed two connectivity ports.For another example, Chinese invention patent CN103855447 institute is public The Elliptic Function Type low-pass filter opened use one group include with conducting wire the inductance element made of folding and be printed with tuning disk The resonant element of dielectric-slab, transverse direction setting of the dielectric-slab across the top of the lengthwise cavity, the inductance element one End and the tuning disk of the dielectric-slab connect, and the other end and the transmission pole connect.Both the above low-pass filter All have that size is larger, and structure is complicated, part is more, and group reload request is high, and assembly precision is not easily controlled, and tuning screw is needed to carry out The problems such as tuning.Additionally, due to there is tuning screw, electric field is concentrated at tuning screw, in high-power situation, it is easy at this It strikes sparks at tuning screw, thus its power capacity is extremely restricted.
Summary of the invention
Technical problem to be solved by the present invention lies in overcoming the shortcomings of present in existing Elliptic Function Type low-pass filter, There is provided first a kind of structure it is simple, convenient for manufacture and the reliable and stable resonator of electric property, and provide one kind on its basis Compact-sized, insertion loss is small, and power capacity is big, the good Elliptic Function Type low-pass filter of Out-of-band rejection.
Resonator of the present invention includes an equivalent capacity structure and an equivalent inductance structure;The equivalent capacity structure packet Include that a U-shaped metal structure and one is contour with the U-shaped metal structure but the lesser metal partion (metp) of thickness, the metal every Plate is set to U-shaped metal structure middle and the thickness direction of U-shaped metal structure is divided into symmetrical two parts;It is described equivalent Induction structure is a metallic rod, and lower end is fixedly connected with the top edge of metal partion (metp).
Preferably, the metallic rod whole linear, broken line, curve or serpentine.
Preferably, the upper end of the metallic rod is provided with the through-hole for passing through conducting wire.
It is further preferred that being additionally provided with one for assisting the blind hole of welding in the through-hole side.
Preferably, the equivalent capacity structure and the molding of equivalent inductance structural integrity.
Elliptic Function Type low-pass filter of the present invention, including the shell being combined by the full symmetric half shell of two panels, institute It states enclosure interior and is formed with cavity;An electrical connection is each provided on the housing wall at the relative position of the cavity both ends Device, two electric connectors pass through a conducting wire electrical connection in cavity;The lower section of the conducting wire, is walked along conducting wire in the cavity To being disposed with one group of as above resonator described in any technical solution, the metallic rod upper end of each resonator and conducting wire electricity Connection.
Preferably, each resonator configuration has the symmetrical dielectric set of two panels, for resonator to be fixed on the appearance In chamber;Two panels dielectric set corresponds respectively to two parts that the U-shaped metal structure of the resonator is separated by metal partion (metp), Every dielectric set entangles the U-shaped metallic moiety corresponding to it with fitting closely.
Preferably, the material of the dielectric set is polytetrafluoroethylene (PTFE).
Further, the back side of each dielectric set, which is each formed at one, is recessed, corresponding with each dielectric set A boss is provided in inner walls at position, each boss can be tightly embedded intp its corresponding dielectric set back side In recess, the positioning and clamping to resonator is realized.
Preferably, each boss and half-shell body by integral forming where it.
The preferred silver-coated copper wire of conducting wire.
Further, the partition wall for preventing signal coupling between the two, the height of partition wall are provided between adjacent resonators Lower than height of the conducting wire in cavity.
Preferably, each partition wall is made of symmetrical two halves, each half partition wall half-shell body by integral forming ipsilateral with it.
Preferably, the resonator shares 2n, and the transmission pole resonance frequency of each resonator is in the filter It transmits in passband, the transmission zero resonance frequency of each resonator is at the Out-of-band rejection of the filter;This 2n are walked along conducting wire I-th and 2n+1-i into the resonator set gradually is identical for two resonators in one group, each group, belongs to not Resonator with group has different transmission pole resonance frequencies and different transmission zero resonance frequencies;Wherein, n be non-zero from So number, i=1,2 ..., n.
Alternatively, the resonator shares 2n+1, the transmission pole resonance frequency of each resonator is in the filter It transmits in passband, the transmission zero resonance frequency of each resonator is at the Out-of-band rejection of the filter;This 2n+1 along conducting wire It moves towards 2n resonator in the resonator that sets gradually in addition to (n+1)th and is divided into n group, i-th a with 2n+2-i to be Two resonators in one group, each group are identical, belong to different groups of resonator have different transmission pole resonance frequency and Different transmission zero resonance frequencies, the transmission pole resonance frequency and transmission zero resonance frequency of (n+1)th resonator with appoint Anticipate one group of resonator transmission pole resonance frequency and transmission zero resonance frequency it is all different;Wherein, n is non-zero natural number, i= 1,2 ..., n.
Compared with prior art, the invention has the following advantages:
Elliptic Function Type low-pass filter of the present invention uses the resonator of special construction, and entire filter does not need to tune, Required components are few, and multiple components use syntype structure, have the advantages that compact overall structure, easily fabricated assembly, and have There is the characteristic that insertion loss is small, power capacity is big, Out-of-band rejection is good, is particularly suitable for the high-power applications occasion of lower frequency.
Detailed description of the invention
Fig. 1 is the equivalent circuit schematic of five rank low-pass filters in specific embodiment;
Fig. 2 is the appearance diagram of five rank low-pass filters in specific embodiment;
Fig. 3 is the Structure explosion diagram of five rank low-pass filters in specific embodiment;
Fig. 4 is the structural schematic diagram of half shell;
Fig. 5 is the structural schematic diagram of first order resonator;
The structural schematic diagram of Fig. 6, Fig. 7 PTFE set mating for first order resonator;
Fig. 8 is the frequency response curve of first order resonator;
Fig. 9 is the structural schematic diagram of second level resonator;
The structural schematic diagram of Figure 10, Figure 11 PTFE set mating for second level resonator;
Figure 12 is the frequency response curve of second level resonator;
Figure 13 is the structural schematic diagram of third level resonator;
The structural schematic diagram of Figure 14, Figure 15 PTFE set mating for third level resonator;
Figure 16 is the frequency response curve of third level resonator;
Figure 17 is the frequency response curve of five rank low-pass filters.
Each label meaning is as follows in figure:
1 is half shell, and 2 be electric connector, and 3 be conducting wire, and 4 be first order resonator, and 5 be the PTFE of first order resonator Set, 6 be second level resonator, and 7 cover for the PTFE of second level resonator, and 8 be third level resonator, and 9 be third level resonator PTFE set, 100 be channel, and 101 be partition wall, and 102 be boss.
Specific embodiment
The present invention constructs Elliptic Function Type low-pass filter, the biography of each resonator using the resonator of several special constructions Defeated pole resonance frequency is in the transmission passband of the filter, and the transmission zero resonance frequency of each resonator is in the filter Out-of-band rejection at.In order to obtain optimal electric property, present invention preferably employs centrosymmetric resonator layout's structure, tools For body,
When resonator sum is even number, i.e., the described resonator shares 2n, this 2n set gradually along conducting wire trend I-th and 2n+1-i in resonator is identical for two resonators in one group, each group, belongs to different groups of resonator With different transmission pole resonance frequencies and different transmission zero resonance frequencies;
When resonator sum is odd number, i.e. resonator shares 2n+1, this 2n+1 set gradually along conducting wire trend 2n resonator in resonator in addition to (n+1)th is divided into n group, and i-th and 2n+2-i is in one group, each group Two resonators are identical, belong to different groups of resonator and have different transmission pole resonance frequencies and different transmission zeros humorous Vibration frequency, the transmission pole resonance frequency of (n+1)th resonator and the biography of transmission zero resonance frequency and any one group of resonator Defeated pole resonance frequency and transmission zero resonance frequency are all different;
Wherein, n is non-zero natural number, i=1,2 ..., n.
For the ease of public understanding, below by taking one works in the 5 rank low-pass filters of 300MHz as an example and in conjunction with attached drawing Technical solution of the present invention is described in detail.The working passband that the 5 rank low-pass filter requires is 360MHz -400MHz, It is required that at outer 420MHz inhibit be greater than 40dB.
Fig. 1 shows the equivalent circuit theory of the five ranks low-pass filter, and the low-pass filter is by 6 capacitors and inductance string It is linked to the resonator on ground, and the high-impedance transmission line composition of 6 resonators of connecting.
Fig. 2 is the appearance of the five ranks low-pass filter, and Fig. 3 is the Structure explosion diagram of the five ranks low-pass filter.Such as Fig. 2,3 Shown, the shell of the five ranks low-pass filter is composed of the full symmetric half shell 1 of two panels, and enclosure interior forms a cross To long and narrow cavity, an electric connector 2 is each provided on the housing wall at the relative position of cavity left and right ends, two are electrically connected It connects device 2 to be electrically connected in cavity by a conducting wire 3, in the lower section of the cavity inside conductor 3, the trend along conducting wire 3 is successively set 6 resonators are set, this 6 resonators include that two identical first resonators 4, two are second resonator 6, two identical Identical three-level resonator 8.As shown in figure 3, this 6 resonators are arranged symmetrically, two first resonators 4 are set to a left side for cavity Right both ends, then toward cavity center be two second resonators 6, the position at cavity center is two three-level resonators 8.Each resonance Device is equipped with the symmetrical dielectric set of corresponding two panels, for resonator to be fixed in cavity.Insulation in the present embodiment Medium cover material uses polytetrafluoroethylene (PTFE) (Polytetrafluoroethylene is abbreviated as PTFE), which is also known as Teflon Dragon has good sealing property, high lubrication, non-stickiness, electrical insulation and good ageing resistance, heat-resisting ability and resists Corrosive power.PTFE covers 5,7,9 shape, size is fitted with first resonator 4, second resonator 6,8 phase of three-level resonator respectively Match.The low-pass filter of other orders is also to constitute according to same principle, and only the number of used resonator is different.
Fig. 4 shows the specific structure of half shell 1.Lead to as shown in figure 4, the top of its cavity is divided into for what conducting wire 3 passed through Road 100, the channel and conducting wire 3 constitute signal path;The signal path generally requires in the low-pass filter of such form It is greater than 50 ohm of high impedance line for characteristic impedance;The cavity of signal path is bigger, then the characteristic impedance of corresponding lead 3 is got over Greatly, the conducting wire 3 of inductance required for obtaining is shorter;If otherwise the size of signal path cavity is smaller, the characteristic resistance of conducting wire 3 Anti- just smaller, the conducting wire 3 of inductance required for obtaining is also longer.Conducting wire 3 in the present embodiment is silver-coated copper wire, this is silver-plated Copper wire equivalent-circuit model is equivalent to the biggish inductance of inductance, and inductance is by the length of the silver-coated copper wire with it in chamber What the characteristic impedance in body determined.The lower section in channel 100 is the part for placing resonator.It is deposited between two resonators in order to prevent It is coupled in harmful signal, as shown in figure 4, being both provided with partition wall 101 between adjacent resonators.Place the cavity portion of resonator Point size shape and installation the PTFE set that wraps up resonator inside it outer dimensional shape it is exactly like, thus can be by Resonator is fixed in cavity.The thickness in each face is essentially identical in PTFE set in the present embodiment, thus can overleaf external shape At recess at one (this recess can also be obtained using other modes).In the present embodiment, at corresponding PTFE set external concavity, The boss 102 that geomery matches therewith is just being provided on 1 inner wall of half shell.When fixing resonance device, boss 102 can Will be firmly stuck in cavity by the resonator that wraps of PTFE set, not only there is a good positioning action, and because There is contact well and there is good heat dissipation effect, is conducive to its occasion for applying to high power work.Above-mentioned half shell 1, The components such as partition wall 101, boss 102 can be used integral forming process and be integrally formed to obtain, and improve production efficiency, reduce production Cost.
The structure of first resonator, second resonator, three-level resonator is respectively such as Fig. 5, Fig. 9, Tu13Suo in the present embodiment Show.It can be seen from the figure that resonator of the present invention consists of two parts: the equivalent capacity structure of lower part and top Equivalent inductance structure;The equivalent capacity structure includes that a U-shaped metal structure and one are contour with the U-shaped metal structure But the lesser metal partion (metp) of thickness, the metal partion (metp) are set to U-shaped metal structure middle and by the thickness of U-shaped metal structure Direction is divided into symmetrical two parts;The equivalent inductance structure is a metallic rod, the top edge of lower end and metal partion (metp) It is fixedly connected.Equivalent capacity structure function therein is to form the capacitor for being parallel to ground, which is that two sides is symmetrical;Phase Main function to thinner metal rod structure (equivalent inductance structure) is to form a lesser inductance.In the present embodiment, In The top side of metallic rod as equivalent inductance structure is all provided with the through-hole pierced, the through-hole be used for assembly when It waits, passes through silver-coated copper wire, in addition, being also provided with a lesser blind hole on the upper surface of metallic rod top, the blind hole is for assisting weldering It connects, trickles when welding silver-coated copper wire resonator metallic rod convenient for scolding tin, it is ensured that the quality of welding.It can be seen from the figure that First resonator, second resonator, the equivalent capacity structure of three-level resonator and equivalent inductance structure specific size there are areas Not, the difference of each resonator electric property is thus brought.In addition, as equivalent inductance structure metallic rod can using straight line, The various structures such as broken line, curve or serpentine.As shown in figure 13, the equivalent inductance structure of three-level resonator uses in the present embodiment Snakelike cable architecture is the length in order to shorten induction structure using snakelike cable architecture, reduces volume;Using the same energy of linear structure Access same performance.The resonator structure very simple, does not need to tune, and one-shot forming technique integrated molding can be used, Manufacturing cost is cheap.
It is humorous that Fig. 6 and Fig. 7, Figure 10 and Figure 11, Figure 14 and Figure 15 respectively illustrate first resonator, second resonator, three-level The structure that the PTFE corresponding to device that shakes covers.As shown, the U-shaped metal structure that two panels PTFE set corresponds respectively to the resonator is golden Belong to two parts that partition is separated, every PTFE set entangles the U-shaped metallic moiety corresponding to it with fitting closely.Cause This, the shape and size of PTFE set are all that the equivalent capacity structure for the resonator to be wrapped up by it is determined.It is being filled Timing, the equivalent capacity structure of resonator, which is entangled rear directly compress, with PTFE set can will complete resonator consolidating in cavity Dingan County's dress.In the present embodiment PTFE cover each face thickness it is almost the same, in this way, can all be generated at the back side of set corresponding recessed Fall into, to be blocked in assembly by the boss on 1 inner wall of half shell, can position accuracy to guarantee fitted position and Then tight fit, it is ensured that the reliability of product.
The equivalent-circuit model of resonator of the present invention is equivalent to big ground capacity one inductance very little of series connection Inductance.The syntonizer is there are two resonance frequency, and transmission pole resonance frequency is in required transmission passband, transmission zero Point resonance frequency is at desired Out-of-band rejection.Fig. 8, Figure 12, Figure 16 respectively illustrate first resonator in the present embodiment, second level The frequency response curve of resonator, three-level resonator;It can be seen from the figure that the frequency response curve of resonator of the present invention all wraps Containing a transmission zero, these transmission zeros constitute the Out-of-band rejection zero point of low-pass filter.The resonance of the transmission zero Frequency meetsL and C is the size for being connected in series to the capacitor and inductance on ground respectively in formula.Specific capacitor It can design to obtain by basic electricity principle with inductance, such as be obtained by business software ADS optimization Simulation.
Figure 17 is the frequency response curve of the low-pass filter.As seen from Figure 17, the low-pass filter because there are Transmission zero is limited, if being n with the order of filter, the number of Out-of-band rejection zero point meets (n+1)/2 (n is odd number), n/2+1 (n is even number), therefore the low-pass filtering has extremely superior Out-of-band rejection performance.To low with common sugarcoated haws form Bandpass filter, frequency response be Chebyshev's receptance function, reach same Out-of-band rejection characteristic then need at least 12 ranks with On.
In summary, the transmission frequency response of low-pass filter of the present invention is elliptic function response, and there are multiple transmission zero Point, it is only necessary to which less order can obtain biggish Out-of-band rejection, therefore volume compact, and Insertion Loss is small, is particularly suitable for applications in To volume requirement height, high-power occasion.
In the case where identical index, the volume of low-pass filter of the present invention is less than conventional sugarcoated haws type low-pass filtering body Long-pending 1/4, and Insertion Loss is smaller, cost is also lower.The volume of system, improves its performance where it can also be reduced accordingly, drops Low cost.
Compared to conventional sugarcoated haws type low-pass filter, also there is low-pass filter of the present invention highest to inhibit up to 10 frequencys multiplication Above advantage.

Claims (15)

1. a kind of resonator, which is characterized in that including an equivalent capacity structure and an equivalent inductance structure;The equivalent electricity Holding structure includes a U-shaped metal structure and a but thickness contour with the U-shaped metal structure less than the U-shaped metal knot The metal partion (metp) of the thickness of structure, the metal partion (metp) are set to U-shaped metal structure middle and by the thickness sides of U-shaped metal structure To symmetrical two parts are divided into, the thickness direction of the U-shaped metal structure refers to the direction perpendicular to the U-shaped plane;Institute Stating equivalent inductance structure is a metallic rod, and lower end is fixedly connected with the top edge of metal partion (metp).
2. resonator as described in claim 1, which is characterized in that the metallic rod whole linear, broken line, curve or snakelike Line.
3. resonator as described in claim 1, which is characterized in that the upper end of the metallic rod is provided with for passing through the logical of conducting wire Hole.
4. resonator as claimed in claim 3, which is characterized in that the through-hole side be additionally provided with one for assist welding Blind hole.
5. the resonator as described in any one of Claims 1 to 4, which is characterized in that the equivalent capacity structure and equivalent inductance knot Structure is integrally formed.
6. a kind of Elliptic Function Type low-pass filter, which is characterized in that including what is be combined by the full symmetric half shell of two panels Shell, the enclosure interior are formed with cavity;One is each provided on the housing wall at the relative position of the cavity both ends Electric connector, two electric connectors pass through a conducting wire electrical connection in cavity;The lower section of the conducting wire, edge in the cavity Conducting wire trend is disposed with one group of resonator as described in any one of Claims 1 to 5, the metallic rod upper end of each resonator with The conducting wire electrical connection.
7. Elliptic Function Type low-pass filter as claimed in claim 6, which is characterized in that each resonator configuration has two panels symmetrical Dielectric set, for resonator to be fixed in the cavity;Two panels dielectric set corresponds respectively to the U of the resonator Two parts that type metal structure is separated by metal partion (metp), every dielectric set entangle the U corresponding to it with fitting closely Type metallic moiety.
8. Elliptic Function Type low-pass filter as claimed in claim 7, which is characterized in that the material of the dielectric set is poly- Tetrafluoroethene.
9. Elliptic Function Type low-pass filter as claimed in claim 7, which is characterized in that the equal shape in the back side of each dielectric set It is recessed at Cheng Youyi, is covered with each dielectric and be provided with a boss in the inner walls at opposite position, it is each convex Platform can be tightly embedded intp in its corresponding dielectric set back side recess, realize the positioning and clamping to resonator.
10. Elliptic Function Type low-pass filter as claimed in claim 9, which is characterized in that each boss and half shell one where it It is body formed.
11. Elliptic Function Type low-pass filter as claimed in claim 6, which is characterized in that the conducting wire is silver-coated copper wire.
12. Elliptic Function Type low-pass filter as claimed in claim 6, which is characterized in that be provided between adjacent resonators The partition wall of signal coupling between the two is prevented, the height of partition wall is lower than height of the conducting wire in cavity.
13. Elliptic Function Type low-pass filter as claimed in claim 12, which is characterized in that each partition wall is by symmetrical two halves It constitutes, each half partition wall half-shell body by integral forming ipsilateral with it.
14. Elliptic Function Type low-pass filter as claimed in claim 6, which is characterized in that the resonator shares 2n, each The transmission pole resonance frequency of resonator is in the transmission passband of the filter, the transmission zero resonance frequency of each resonator At the Out-of-band rejection of the filter;This 2n in the resonator that conducting wire trend is set gradually theiA and 2n+1-iIt is a It is that two resonators in one group, each group are identical, belonging to different groups of resonator has different transmission pole resonance frequencies With different transmission zero resonance frequencies;Wherein, n is non-zero natural number, i=1,2 ..., n.
15. Elliptic Function Type low-pass filter as claimed in claim 6, which is characterized in that the resonator shares 2n+1, often The transmission pole resonance frequency of a resonator is in the transmission passband of the filter, the transmission zero resonance frequency of each resonator Rate is at the Out-of-band rejection of the filter;This 2n+1 along the resonator that conducting wire trend is set gradually in addition to (n+1)th 2n resonator is divided into n group, theiA and 2n+2-iA is one group, and two resonators in each group are identical, belongs to difference The resonator of group has different transmission pole resonance frequencies and different transmission zero resonance frequencies, (n+1)th resonator The transmission pole resonance frequency and transmission zero of transmission pole resonance frequency and transmission zero resonance frequency and any one group of resonator Point resonance frequency is all different;Wherein, n is non-zero natural number, i=1,2 ..., n.
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CN109560355B (en) * 2018-12-28 2024-05-14 重庆思睿创瓷电科技有限公司 Dielectric body for 5G communication, dielectric waveguide filter, radio frequency module and base station
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354778A (en) * 2011-08-24 2012-02-15 京信通信系统(中国)有限公司 Elliptic function low-path filtering path and communication cavity device adopting same
CN102412433A (en) * 2011-09-27 2012-04-11 京信通信系统(中国)有限公司 Communication cavity device and elliptic function low-pass filter path
CN207320282U (en) * 2017-09-25 2018-05-04 江苏贝孚德通讯科技股份有限公司 Resonator and elliptic function type low-pass filter

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040257176A1 (en) * 2003-05-07 2004-12-23 Pance Kristi Dhimiter Mounting mechanism for high performance dielectric resonator circuits

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102354778A (en) * 2011-08-24 2012-02-15 京信通信系统(中国)有限公司 Elliptic function low-path filtering path and communication cavity device adopting same
CN102412433A (en) * 2011-09-27 2012-04-11 京信通信系统(中国)有限公司 Communication cavity device and elliptic function low-pass filter path
CN207320282U (en) * 2017-09-25 2018-05-04 江苏贝孚德通讯科技股份有限公司 Resonator and elliptic function type low-pass filter

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
用于椭圆函数滤波器高级模块化设计的单腔体计算机辅助设计;杨钊 等;《现代电子技术》;20070501(第9期);98-100 *

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