CN107507647B - A kind of three-dimensional storage and its read method and reading circuit - Google Patents
A kind of three-dimensional storage and its read method and reading circuit Download PDFInfo
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- CN107507647B CN107507647B CN201710772578.2A CN201710772578A CN107507647B CN 107507647 B CN107507647 B CN 107507647B CN 201710772578 A CN201710772578 A CN 201710772578A CN 107507647 B CN107507647 B CN 107507647B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3422—Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/24—Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
Abstract
The invention discloses a kind of three-dimensional storage and its read methods and reading circuit, the three-dimensional storage includes storage string array, the storage string array includes multiple storage strings, and the storage string includes concatenated multiple storage units, in to three-dimensional storage reading process, control the coupling potential that the default storage unit in unselected storage string generates after inputting verifying voltage, potential difference is within a preset range between the coupling potential generated after input string conducting voltage with remaining memory cell in unselected storage string, so that each region potential in unselected storage string is more balanced, improve the case where electronics is flowed from the low default storage unit of potential to the high storage unit of adjacent potential, and then improves default storage unit and the case where hot carrier injection effect occur, improve the reliability of three-dimensional storage.
Description
Technical field
The present invention relates to memory technology fields, more specifically, are related to a kind of three-dimensional storage and its read method
And reading circuit.
Background technique
Nand flash memory is a kind of memory devices more better than hard disk drive, as people pursue low-power consumption, lightweight
With the non-volatile memory product of more preferable performance, NAND memory device is widely used in electronic product.Currently, flat
The nand flash memory of face structure has had reached the limit of true extension, in order to further increase memory capacity, reduces every bit
Carrying cost proposes 3D NANFD memory (three-dimensional storage).Existing three-dimensional storage includes storage string array, is deposited
Storage string array includes multiple storage strings, and each storage string includes concatenated multiple memory transistors.The prior art is right
Three-dimensional storage carries out in the reading process of data, can be to choosing storage string to be read out, and simultaneously also can be to unselected storage
String carries out the input of voltage, specially inputs verifying voltage to the control terminal of memory transistor random in unselected storage string,
Simultaneously to remaining memory transistor input string conducting voltage of unselected storage string, wherein verifying voltage is in reading process
Voltage in rising trend.Existing read method frequently results in the storage unit in unchecked storage string in input verifying electricity
When pressure, hot carrier injection effect is generated in memory transistor, reduces the reliability of three-dimensional storage.
Summary of the invention
In view of this, being deposited the present invention provides a kind of three-dimensional storage and its read method and reading circuit to three-dimensional
In reservoir reading process, the coupling electricity that the default storage unit in unselected storage string generates after inputting verifying voltage is controlled
In gesture, with unselected storage string remaining memory cell between the coupling potential generated after input string conducting voltage potential difference pre-
If in range, so that each region potential in unselected storage string is more balanced, improving default storage unit and hot carrier occur
The case where injection effect, improves the reliability of three-dimensional storage.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of read method of three-dimensional storage, the three-dimensional storage include storage string array, the storage string array
Including multiple storage strings, and the storage string includes concatenated multiple storage units, comprising:
Close the unchecked storage string in the storage string array；
The coupling potential that the default storage unit in the unselected storage string generates after inputting verifying voltage is controlled, with
In the unselected storage string remaining memory cell between the coupling potential generated after input string conducting voltage potential difference pre-
If in range.
Optionally, the verifying voltage is inputted to the default storage unit are as follows:
The verifying voltage on a declining curve to the default storage unit input voltage value.
Optionally, the read method includes the first Qualify Phase, the second Qualify Phase and third Qualify Phase；Wherein,
In first Qualify Phase, the first default verifying voltage is inputted to the default storage unit；
In second Qualify Phase, the second default verifying voltage is inputted to the default storage unit；
And in the third Qualify Phase, verifying voltage is preset to the default storage unit input third, wherein institute
The first default verifying voltage is stated greater than the described second default verifying voltage, and the second default verifying voltage is greater than the third
Default verifying voltage.
Optionally, the storage string further includes first end selecting unit and the second end selecting unit, the first end
Portion's selecting unit is serially connected with the input end of concatenated multiple storage units, and the second end selecting unit is serially connected with
The output end of concatenated multiple storage units；
Wherein, the input terminal of the first end selecting unit connects bit line, the output of the second end selecting unit
End connection common source line.
Optionally, the unchecked storage string in the storage string array is closed are as follows:
Turn off the first end selecting unit and the second end choosing in the unchecked storage string in the storage string array
Select unit.
Optionally, the storage unit is memory transistor；
And the first end selecting unit and the second end selecting unit are selection transistor.
Correspondingly, the three-dimensional storage includes storage the present invention also provides a kind of reading circuit of three-dimensional storage
String array, the storage string array includes multiple storage strings, and the storage string includes concatenated multiple storage units, comprising:
Control module, the control module are used for the unchecked storage string closed in the storage string array；
And voltage output module, the voltage output module is used for the storage unit input voltage, described in control
The coupling potential that default storage unit in unselected storage string generates after inputting verifying voltage, with the unselected storage string
Potential difference is within a preset range between the coupling potential generated after input string conducting voltage for middle remaining memory cell.
Optionally, the verifying voltage is voltage value verifying voltage on a declining curve.
Optionally, the reading circuit reading process divides three phases to be the first Qualify Phase, the second Qualify Phase and the
Three Qualify Phases；Wherein, it is pre- to input first to the default storage unit in first Qualify Phase for voltage output module
If verifying voltage；
In second Qualify Phase, the second default verifying voltage is inputted to the default storage unit；
And in the third Qualify Phase, verifying voltage is preset to the default storage unit input third, wherein institute
The first default verifying voltage is stated greater than the described second default verifying voltage, and the second default verifying voltage is greater than the third
Default verifying voltage.
Optionally, the storage string further includes first end selecting unit and the second end selecting unit, the first end
Portion's selecting unit is serially connected with the input end of concatenated multiple storage units, and the second end selecting unit is serially connected with
The output end of concatenated multiple storage units；
Wherein, the input terminal of the first end selecting unit connects bit line, the output of the second end selecting unit
End connection common source line.
It is optional, the control module and the first end selecting unit and the second end selecting unit
Control terminal be connected；
Wherein, the control module is used to select the first end in the unchecked storage string in the storage string array
Voltage is closed in the control terminal input for selecting unit and the second end selecting unit.
Optionally, the storage unit is memory transistor；
And the first end selecting unit and the second end selecting unit are selection transistor.
Correspondingly, the three-dimensional storage includes the three-dimensional storage that quotient states the present invention also provides a kind of three-dimensional storage
The reading circuit of device.
Compared to the prior art, technical solution provided by the invention has at least the following advantages:
The present invention provides a kind of three-dimensional storage and its read method and reading circuit, the three-dimensional storage includes depositing
Storage string array, the storage string array includes multiple storage strings, and the storage string includes concatenated multiple storage units, packet
It includes: closing the unchecked storage string in the storage string array；Control the default storage unit in the unselected storage string
Remaining memory cell is in input string electric conduction in the coupling potential generated after inputting verifying voltage, with the unselected storage string
Potential difference is within a preset range between the coupling potential generated after pressure.As shown in the above, technical solution provided by the invention,
In to three-dimensional storage reading process, the default storage unit controlled in unselected storage string generates after inputting verifying voltage
Coupling potential, it is electric between the coupling potential generated after input string conducting voltage with remaining memory cell in unselected storage string
Potential difference within a preset range, so that each region potential in unselected storage string is more balanced, improves electronics by low pre- of potential
If the case where storage unit is flowed to the high storage unit of adjacent potential, and then improve default storage unit and hot carrier note occur
The reliability of three-dimensional storage improves in the case where entering effect.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of flow chart of the read method of three-dimensional storage provided by the embodiments of the present application；
Fig. 2 is a kind of line construction schematic diagram of three-dimensional storage provided by the embodiments of the present application；
Fig. 3 is the reading time diagram that a kind of three-dimensional provided by the embodiments of the present application deposits memory；
Fig. 4 is a kind of structural schematic diagram of the reading circuit of three-dimensional storage provided by the embodiments of the present application.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, the prior art, can be to choosing in the reading process for carrying out data to three-dimensional storage
Storage string is read out, and can also carry out the input of voltage to unselected storage string simultaneously, specially in unselected storage string
The control terminal of random memory transistor inputs verifying voltage, while to remaining memory transistor input string of unselected storage string
Conducting voltage, wherein verifying voltage is voltage in rising trend in reading process.Existing read method frequently results in not
The storage unit in storage string chosen generates hot carrier in jection effect when inputting verifying voltage, in memory transistor
It answers, reduces the reliability of three-dimensional storage.
Based on this, the embodiment of the present application provides a kind of three-dimensional storage and its read method and reading circuit, to three
It ties up in memory read process, controls the coupling that the default storage unit in unselected storage string generates after inputting verifying voltage
Remaining memory cell potential difference between the coupling potential generated after input string conducting voltage exists in potential, with unselected storage string
In preset range, so that each region potential in unselected storage string is more balanced, improves default storage unit and hot current-carrying occur
The case where sub- injection effect, improves the reliability of three-dimensional storage.To achieve the above object, technology provided by the embodiments of the present application
Scheme is as follows, specifically combines Fig. 1 to Fig. 4 that technical solution provided by the embodiments of the present application is described in detail.
Refering to what is shown in Fig. 1, be a kind of flow chart of the read method of three-dimensional storage provided by the embodiments of the present application,
In, the three-dimensional storage includes storage string array, and the storage string array includes multiple storage strings, and the storage string includes
Concatenated multiple storage units, read method include:
Unchecked storage string in S1, the closing storage string array；
The coupling electricity that default storage unit in S2, the control unselected storage string generates after inputting verifying voltage
Remaining memory cell potential difference between the coupling potential generated after input string conducting voltage in gesture, with the unselected storage string
Within a preset range.
It should be noted that default storage unit provided by the embodiments of the present application is depositing of choosing at random in reading process
Storage unit, so, the application presets the specific location of storage unit without limitation to this.
As shown in the above, technical solution provided by the embodiments of the present application, in three-dimensional storage reading process, control
The coupling potential that the default storage unit in unselected storage string generates after inputting verifying voltage is made, in unselected storage string
Remaining memory cell between the coupling potential generated after input string conducting voltage potential difference within a preset range so that unselected
Each region potential in storage string is more balanced, improves the electronics storage high to adjacent potential from the low default storage unit of potential
The case where unit flows, and then improve default storage unit and the case where hot carrier injection effect occur, improve three-dimensional storage
Reliability.
The structure of three-dimensional storage provided by the embodiments of the present application is illustrated with reference to the accompanying drawing, refering to what is shown in Fig. 2,
For a kind of structural schematic diagram of three-dimensional storage provided by the embodiments of the present application, wherein three-dimensional storage packet provided by the present application
It includes:
Storage string array, the storage string array includes multiple storage strings 100, and the storage string 100 includes concatenated
Multiple storage units 110.
In one embodiment of the application, the storage string 100 provided by the present application further includes first end selecting unit 101
With the second end selecting unit 102, the first end selecting unit 101 is serially connected with concatenated multiple storage units 110
Input end, and the second end selecting unit 102 is serially connected with the output end of concatenated multiple storage units 110
Portion；
Wherein, the input terminal of the first end selecting unit 101 connects bit line BL, the second end selecting unit
102 output end connects common source line GL.
And three-dimensional storage provided by the embodiments of the present application is also surrounded by a plurality of wordline (WL (0)-WL (m)), storage string
The control terminal of storage unit 110 in 100 connects one to one respectively at wordline, wherein verifying voltage Vverify and string conducting
Voltage Vread is the control terminal that corresponding storage unit 110 is transmitted to by respective word.In addition, first end selecting unit
101 control terminal is connected with string selection line SSL, and the control terminal of the second end selecting unit 102 is connected with ground connection selection line GSL.
In order to close and storage string, the unchecked storage provided by the embodiments of the present application closed in the storage string array
String are as follows:
Turn off the first end selecting unit and the second end choosing in the unchecked storage string in the storage string array
Select unit.That is, passing through string selection line SSL and ground connection selection line GSL transmission closing voltage to selecting unit, and then close concatenated
Contacting between storage unit and bit line BL and common source line GL.
It should be noted that three-dimensional storage provided by the embodiments of the present application further includes having driving circuit, sensor circuit etc.
Structure, it is same as the prior art to this, therefore do not make extra repeat.
It is provided by the present application that the verifying voltage is inputted to the default storage unit in one embodiment of the application are as follows:
The verifying voltage on a declining curve to the default storage unit input voltage value.Wherein, it in reading process, removes
Outside selected default storage unit, remaining memory cell can control terminal be entered the biggish string conducting voltage of numerical value；Cause
And the incipient stage in reading process inputs biggish verifying voltage to the control terminal of default storage unit, and then presets and deposit
The coupling that the coupling potential that storage unit is generated according to biggish verifying voltage will be generated with storage unit according to string conducting voltage
Potential is close, and then avoids the occurrence of electronics the depositing to neighboring access string conducting voltage of the default storage unit of access verifying voltage
The case where storage unit flows, improvement set storage unit and the case where hot carrier injection effect occur, improve three-dimensional storage
Reliability.
Meanwhile in the reading process of three-dimensional storage, it will appear in the input terminal and input terminal practical application of storage string
Leaky (i.e. not absolutely close in practical applications, can also by first end selecting unit and the second end selecting unit
Occur leakage current transmission between the bit line being separately connected and common source line), thus, with the passage of read access time, storage string is each
The coupling potential that a storage unit generates is actually that can become smaller with read access time.So in the subsequent stages of reading process
Section, the numerical value of verifying voltage is become smaller, and the coupling potential for enabling to default storage unit to generate becomes smaller therewith, equally after continuation of insurance
It holds with storage unit according to state similar in the coupling potential that conducting voltage generates of going here and there, guarantees each region in unselected storage string
Potential is more balanced, and improvement sets storage unit and the case where hot carrier injection effect occurs, improves the reliability of three-dimensional storage.
In one embodiment of the application, refering to what is shown in Fig. 3, being a kind of reading of three-dimensional storage provided by the embodiments of the present application
Time diagram is taken, the read method provided by the present application includes the first Qualify Phase T1, the second Qualify Phase T2 and third
Qualify Phase T3, it is same as the prior art to this divided stages, therefore extra repeat is not done；
Wherein, in the first Qualify Phase T1, the first default verifying voltage is inputted to the default storage unit 111
Vrf1；
In the second Qualify Phase T2, the second default verifying voltage Vrf2 is inputted to the default storage unit 111；
And in the third Qualify Phase T3, third is inputted to the default storage unit 111 and presets verifying voltage
Vrf3, wherein the first default verifying voltage Vrf1 is greater than the described second default verifying voltage Vrf2, and described second is default
Verifying voltage Vrf2 is greater than the third and presets verifying voltage Vrf3.
And in reading process, to remaining memory cell, (two such as adjacent with default storage unit 111 storages are single
Member 112 and storage unit 113) input string conducting voltage Vread.
Have it should be noted that the embodiment of the present application does not do the specific value size of verifying voltage and string conducting voltage
Body limitation, needs specifically to be designed according to practical application.
In one embodiment of the application, the storage unit provided by the present application is memory transistor；
And the first end selecting unit and the second end selecting unit are selection transistor.Wherein, this Shen
Please the type of the transistor of offer is not particularly limited, needs specifically to be designed according to practical application.
And in one embodiment of the application, in the reading process of three-dimensional storage, for choosing storage string, to it
The verifying voltage of default storage unit input can be verifying voltage (verifying electricity as shown in Figure 3 on a declining curve
Pressure), it can also be verifying voltage (such as voltage opposite with verifying voltage in Fig. 3) in rising trend, this application is not done
Concrete restriction.
Correspondingly, the embodiment of the present application also provides a kind of reading circuits of three-dimensional storage, refering to what is shown in Fig. 4, for this
Apply for a kind of structural schematic diagram of the reading circuit for three-dimensional storage that embodiment provides, wherein the three-dimensional storage includes
Storage string array, the storage string array includes multiple storage strings 100, and the storage string 100 includes concatenated multiple storages
Unit 110, comprising:
Control module 200, the control module 200 are used for the unchecked storage string closed in the storage string array；
And voltage output module 300, the voltage output module is used for the storage unit input voltage, with control
The coupling potential that default storage unit in the unselected storage string generates after inputting verifying voltage unselected is deposited with described
Potential difference is within a preset range between the coupling potential generated after input string conducting voltage for remaining memory cell in storage string.
Wherein, three-dimensional storage may include having first end selecting unit 101 and the second end selecting unit 102, with
And the control terminal of storage unit 110 connects one to one with wordline (WL (0)-WL (m)), wherein control module 200 can lead to
Closing first end selecting unit 101 and the second end selecting unit 102 are crossed so that storage string 100 and bit line BL and common source line GL
It disconnects.And verifying voltage and string conducting voltage can be transmitted to and be deposited accordingly by wordline by voltage output module 300
Storage unit.
In one embodiment of the application, the verifying voltage provided by the present application is voltage value verifying electricity on a declining curve
Pressure.
And the reading circuit reading process provided by the present application divides three phases to be the first Qualify Phase, the second verifying
Stage and third Qualify Phase；Wherein, voltage output module is defeated to the default storage unit in first Qualify Phase
Enter the first default verifying voltage；
In second Qualify Phase, the second default verifying voltage is inputted to the default storage unit；
And in the third Qualify Phase, verifying voltage is preset to the default storage unit input third, wherein institute
The first default verifying voltage is stated greater than the described second default verifying voltage, and the second default verifying voltage is greater than the third
Default verifying voltage.
In one embodiment of the application, the storage string provided by the present application further includes first end selecting unit and second
End selecting unit, the first end selecting unit are serially connected with the input end of concatenated multiple storage units, and institute
State the output end that the second end selecting unit is serially connected with concatenated multiple storage units；
Wherein, the input terminal of the first end selecting unit connects bit line, the output of the second end selecting unit
End connection common source line.
The control module provided by the embodiments of the present application and the first end selecting unit and the second end select
The control terminal for selecting unit is connected；
Wherein, the control module is used to select the first end in the unchecked storage string in the storage string array
Voltage is closed in the control terminal input for selecting unit and the second end selecting unit.
In one embodiment of the application, the storage unit provided by the present application is memory transistor；
And the first end selecting unit and the second end selecting unit are selection transistor.
Correspondingly, the three-dimensional storage includes three that quotient states the embodiment of the present application also provides a kind of three-dimensional storage
Tie up the reading circuit of memory.
The embodiment of the present application provides a kind of three-dimensional storage and its read method and reading circuit, the three-dimensional storage
Including storage string array, the storage string array includes multiple storage strings, and the storage string includes that concatenated multiple storages are single
Member, comprising: close the unchecked storage string in the storage string array；Control the default storage in the unselected storage string
Remaining memory cell is led in input string in the coupling potential that unit generates after inputting verifying voltage, with the unselected storage string
Potential difference is within a preset range between the coupling potential that generates after the pressure that is powered.As shown in the above, the embodiment of the present application provides
Technical solution, in three-dimensional storage reading process, the default storage unit controlled in unselected storage string is tested in input
The coupling potential generated after card voltage, the coupling generated after input string conducting voltage with remaining memory cell in unselected storage string
Closing potential difference between potential within a preset range, so that each region potential in unselected storage string is more balanced, improves electronics
The case where default storage unit low from potential is flowed to the high storage unit of adjacent potential, and then improve default storage unit and go out
The case where existing hot carrier injection effect, improve the reliability of three-dimensional storage.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (11)
1. a kind of read method of three-dimensional storage, the three-dimensional storage includes storage string array, the storage string array packet
Multiple storage strings are included, and the storage string includes concatenated multiple storage units characterized by comprising
Close the unchecked storage string in the storage string array；
The coupling potential that the default storage unit in the unselected storage string generates after inputting verifying voltage is controlled, and it is described
In unselected storage string remaining memory cell between the coupling potential generated after input string conducting voltage potential difference in default model
In enclosing；
Wherein, the verifying voltage is inputted to the default storage unit are as follows:
The verifying voltage on a declining curve to the default storage unit input voltage value.
2. the read method of three-dimensional storage according to claim 1, which is characterized in that the read method includes first
Qualify Phase, the second Qualify Phase and third Qualify Phase；Wherein, single to the default storage in first Qualify Phase
Member the first default verifying voltage of input；
In second Qualify Phase, the second default verifying voltage is inputted to the default storage unit；
And in the third Qualify Phase, verifying voltage is preset to the default storage unit input third, wherein described the
One default verifying voltage is greater than the described second default verifying voltage, and the second default verifying voltage is default greater than the third
Verifying voltage.
3. the read method of three-dimensional storage according to claim 1, which is characterized in that the storage string further includes first
End selecting unit and the second end selecting unit, it is single that the first end selecting unit is serially connected with concatenated multiple storages
The input end of member, and the second end selecting unit is serially connected with the output end of concatenated multiple storage units；
Wherein, the input terminal of the first end selecting unit connects bit line, and the output end of the second end selecting unit connects
Connect common source line.
4. the read method of three-dimensional storage according to claim 3, which is characterized in that close in the storage string array
Unchecked storage string are as follows:
Turn off the first end selecting unit and the second end selection list in the unchecked storage string in the storage string array
Member.
5. the read method of three-dimensional storage according to claim 3, which is characterized in that the storage unit is that storage is brilliant
Body pipe；
And the first end selecting unit and the second end selecting unit are selection transistor.
6. a kind of reading circuit of three-dimensional storage, the three-dimensional storage includes storage string array, the storage string array packet
Multiple storage strings are included, and the storage string includes concatenated multiple storage units characterized by comprising
Control module, the control module are used for the unchecked storage string closed in the storage string array；
And voltage output module, the voltage output module is used for the storage unit input voltage, described unselected to control
The coupling potential that default storage unit in middle storage string generates after inputting verifying voltage, with its in the unselected storage string
Potential difference is within a preset range between the coupling potential generated after input string conducting voltage for balance storage unit；
Wherein, the verifying voltage is voltage value verifying voltage on a declining curve.
7. the reading circuit of three-dimensional storage according to claim 6, which is characterized in that the reading circuit reading process
Dividing three phases is the first Qualify Phase, the second Qualify Phase and third Qualify Phase；Wherein, voltage output module is described
One Qualify Phase inputs the first default verifying voltage to the default storage unit；
In second Qualify Phase, the second default verifying voltage is inputted to the default storage unit；
And in the third Qualify Phase, verifying voltage is preset to the default storage unit input third, wherein described the
One default verifying voltage is greater than the described second default verifying voltage, and the second default verifying voltage is default greater than the third
Verifying voltage.
8. the reading circuit of three-dimensional storage according to claim 6, which is characterized in that the storage string further includes first
End selecting unit and the second end selecting unit, it is single that the first end selecting unit is serially connected with concatenated multiple storages
The input end of member, and the second end selecting unit is serially connected with the output end of concatenated multiple storage units；
Wherein, the input terminal of the first end selecting unit connects bit line, and the output end of the second end selecting unit connects
Connect common source line.
9. the reading circuit of three-dimensional storage according to claim 8, which is characterized in that the control module and described the
One end selecting unit is connected with the control terminal of the second end selecting unit；
Wherein, the control module is used to select the first end in the unchecked storage string in the storage string array single
Voltage is closed in the input of the control terminal of member and the second end selecting unit.
10. the reading circuit of three-dimensional storage according to claim 9, which is characterized in that the storage unit is storage
Transistor；
And the first end selecting unit and the second end selecting unit are selection transistor.
11. a kind of three-dimensional storage, which is characterized in that the three-dimensional storage includes described in claim 6~10 any one
Three-dimensional storage reading circuit.
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