CN107492578B - Semiconductor diode device packaging structure - Google Patents
Semiconductor diode device packaging structure Download PDFInfo
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- CN107492578B CN107492578B CN201710496014.0A CN201710496014A CN107492578B CN 107492578 B CN107492578 B CN 107492578B CN 201710496014 A CN201710496014 A CN 201710496014A CN 107492578 B CN107492578 B CN 107492578B
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- silica gel
- diode device
- semiconductor diode
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 57
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 16
- 239000002313 adhesive film Substances 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims description 59
- 239000011347 resin Substances 0.000 claims description 59
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 58
- 239000000741 silica gel Substances 0.000 claims description 58
- 229910002027 silica gel Inorganic materials 0.000 claims description 58
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- 239000000805 composite resin Substances 0.000 claims description 32
- -1 polyethylene terephthalate Polymers 0.000 claims description 32
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 32
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 32
- 229920001577 copolymer Polymers 0.000 claims description 26
- 239000003822 epoxy resin Substances 0.000 claims description 26
- 229920000647 polyepoxide Polymers 0.000 claims description 26
- 229920000840 ethylene tetrafluoroethylene copolymer Polymers 0.000 claims description 25
- 230000000149 penetrating effect Effects 0.000 claims description 14
- 239000011159 matrix material Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 230000003014 reinforcing effect Effects 0.000 claims description 10
- 239000005341 toughened glass Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- 239000010935 stainless steel Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000002131 composite material Substances 0.000 abstract description 9
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 183
- 230000002787 reinforcement Effects 0.000 description 16
- 229920002050 silicone resin Polymers 0.000 description 16
- 239000012790 adhesive layer Substances 0.000 description 8
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention relates to a semiconductor diode device packaging structure, which belongs to the technical field of semiconductor packaging. The novel composite material adhesive film is adopted to package the semiconductor diode device, so that the service life of the semiconductor diode device is prolonged, and the packaging structure has the advantages of good stability, superior performance, good weather resistance and the like.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a semiconductor diode device packaging structure.
Background
In recent years, a semiconductor diode device is often packaged by using a resin material, and particularly, for a solar cell or a photodetector, a conventional packaging structure includes a transparent cover plate, an EVA packaging adhesive layer, a solar cell layer or a photodetector layer, an EVA packaging adhesive layer, and a back plate.
Disclosure of Invention
The present invention is directed to overcoming the above-mentioned deficiencies in the prior art and providing a semiconductor diode device package structure.
In order to achieve the above object, the present invention provides a semiconductor diode device package structure, which includes a tempered glass plate, a resin composite adhesive film, a semiconductor diode device layer, a metal-resin composite adhesive film, and a back plate, which are sequentially stacked;
the resin composite material adhesive film comprises a first ethylene-1-butylene-4-methyl-1-pentene copolymer layer, a first silica gel resin bonding layer, a polyethylene terephthalate base layer, a second silica gel resin bonding layer and a first ethylene-tetrafluoroethylene copolymer layer which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the polyethylene terephthalate base layer are formed in the polyethylene terephthalate base layer, first epoxy resin bonding reinforcing columns are filled in the through holes, and the first epoxy resin bonding reinforcing columns are connected with the first silica gel resin bonding layer and the second silica gel resin bonding layer;
the metal-resin composite adhesive film comprises a second ethylene-1-butene-4-methyl-1-pentene copolymer layer, a third silica gel resin bonding layer, a metal base layer, a fourth silica gel resin bonding layer and a second ethylene-tetrafluoroethylene copolymer layer which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the metal base layer are formed in the metal base layer, second epoxy resin bonding reinforcing columns are filled in the through holes, and the second epoxy resin bonding reinforcing columns are connected with the third silica gel resin bonding layer and the fourth silica gel resin bonding layer.
Preferably, the thickness of the first ethylene-1-butylene-4-methyl-1-pentene copolymer layer is 400 microns, the thickness range of the first silica gel resin bonding layer and the second silica gel resin bonding layer is 800 nanometers and 400 microns, the thickness of the polyethylene terephthalate base layer is 500 microns and 300 microns, the thickness of the first ethylene-tetrafluoroethylene copolymer layer is 200 microns and 100 microns, and a plurality of through holes in the polyethylene terephthalate base layer are arranged in a matrix.
Preferably, the thickness of the second ethylene-1-butene-4-methyl-1-pentene copolymer layer is 500-micron, the thickness of the third silica gel resin bonding layer and the thickness of the fourth silica gel resin bonding layer are 900-micron, the thickness of the metal base layer is 900-micron, the thickness of the second ethylene-tetrafluoroethylene copolymer layer is 300-micron, and a plurality of through holes in the metal base layer are arranged in a matrix.
Preferably, the material of the metal base layer is one of aluminum, copper and stainless steel.
Preferably, the semiconductor diode device in the semiconductor diode device layer is a solar cell or a photodetector.
Preferably, the backsheet is a metal backsheet or a TPT backsheet.
The invention has the following beneficial effects:
in the resin composite material adhesive film and the metal-resin composite material adhesive film, the through holes are formed in the polyethylene terephthalate base layer or the metal base layer, so that the silica gel resin bonding layers on the two sides of the base layer are connected through the epoxy resin bonding reinforcing columns, the adhesion force and the stability of the composite material adhesive film are improved, and the composite material adhesive film is prevented from being stripped.
According to the metal-resin composite material adhesive film, the metal base layer is arranged, so that light penetrating through the semiconductor diode device layer can be effectively reflected, and the utilization rate of the light is improved.
According to the invention, the ethylene-1-butene-4-methyl-1-pentene copolymer layer is arranged in the composite material adhesive film close to the side of the semiconductor diode device layer, and the ethylene-tetrafluoroethylene copolymer layer is arranged in the composite material adhesive film far away from the side of the semiconductor diode device layer.
Drawings
Fig. 1 is a schematic structural diagram of a packaging structure of a semiconductor device according to the present invention;
FIG. 2 is a schematic cross-sectional view of a resin composite adhesive film according to the present invention;
fig. 3 is a schematic cross-sectional view of a metal-resin composite adhesive film according to the present invention.
Detailed Description
Referring to fig. 1-3, a semiconductor diode device packaging structure includes a tempered glass plate 1, a resin composite adhesive film 2, a semiconductor diode device layer 3, a metal-resin composite adhesive film 4, and a back plate 5, which are sequentially stacked; the resin composite adhesive film 2 comprises a first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21, a first silica gel resin bonding layer 22, a polyethylene terephthalate base layer 23, a second silica gel resin bonding layer 24 and a first ethylene-tetrafluoroethylene copolymer layer 25 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the polyethylene terephthalate base layer 23 are formed in the polyethylene terephthalate base layer 23, first epoxy resin bonding reinforcement columns 26 are filled in the through holes, and the first epoxy resin bonding reinforcement columns 26 are connected with the first silica gel resin bonding layer 22 and the second silica gel resin bonding layer 24; the metal-resin composite adhesive film 4 comprises a second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41, a third silicone resin bonding layer 42, a metal base layer 43, a fourth silicone resin bonding layer 44 and a second ethylene-tetrafluoroethylene copolymer layer 45 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the metal base layer are formed in the metal base layer 43, second epoxy resin bonding reinforcement columns 46 are filled in the through holes, and the second epoxy resin bonding reinforcement columns 46 are connected with the third silicone resin bonding layer 42 and the fourth silicone resin bonding layer 44.
Wherein, the thickness of the first ethylene-1-butylene-4-methyl-1-pentene copolymer layer 21 is 400 microns, the thickness of the first silica gel resin bonding layer 22 and the second silica gel resin bonding layer 24 is 400 nm and 800 nm, the thickness of the polyethylene terephthalate base layer 23 is 500 microns and 300 microns, the thickness of the first ethylene-tetrafluoroethylene copolymer layer 25 is 200 microns and 100 microns, and a plurality of through holes in the polyethylene terephthalate base layer 23 are arranged in a matrix. The thickness of the second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41 is 500-micron, the thickness of the third silica gel resin bonding layer 42 and the thickness of the fourth silica gel resin bonding layer 44 are 900-micron, the thickness of the metal base layer 43 is 900-micron, the thickness of the second ethylene-tetrafluoroethylene copolymer layer 45 is 300-micron, and a plurality of through holes in the metal base layer 43 are arranged in a matrix. The metal base layer 43 is made of one of aluminum, copper and stainless steel. The semiconductor diode device in the semiconductor diode device layer 3 is a solar cell or a photodetector. The back sheet 5 is a metal back sheet or a TPT back sheet.
Example 1
Referring to fig. 1-3, a semiconductor diode device packaging structure includes a tempered glass plate 1, a resin composite adhesive film 2, a semiconductor diode device layer 3, a metal-resin composite adhesive film 4, and a back plate 5, which are sequentially stacked; the resin composite adhesive film 2 comprises a first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21, a first silica gel resin bonding layer 22, a polyethylene terephthalate base layer 23, a second silica gel resin bonding layer 24 and a first ethylene-tetrafluoroethylene copolymer layer 25 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the polyethylene terephthalate base layer 23 are formed in the polyethylene terephthalate base layer 23, first epoxy resin bonding reinforcement columns 26 are filled in the through holes, and the first epoxy resin bonding reinforcement columns 26 are connected with the first silica gel resin bonding layer 22 and the second silica gel resin bonding layer 24; the metal-resin composite adhesive film 4 comprises a second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41, a third silicone resin bonding layer 42, a metal base layer 43, a fourth silicone resin bonding layer 44 and a second ethylene-tetrafluoroethylene copolymer layer 45 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the metal base layer are formed in the metal base layer 43, second epoxy resin bonding reinforcement columns 46 are filled in the through holes, and the second epoxy resin bonding reinforcement columns 46 are connected with the third silicone resin bonding layer 42 and the fourth silicone resin bonding layer 44. Wherein, the thickness of first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21 is 200 microns, the thickness of first silica gel resin tie coat 22 with second silica gel resin tie coat 24 is 400 nanometers, the thickness of polyethylene terephthalate basic unit 23 is 300 microns, the thickness of first ethylene-tetrafluoroethylene copolymer layer 25 is 100 microns, a plurality of through-holes in the polyethylene terephthalate basic unit 23 are matrix arrangement. The thickness of the second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41 is 100 micrometers, the thickness of the third silica gel resin adhesive layer 42 and the thickness of the fourth silica gel resin adhesive layer 44 are 500 nanometers, the thickness of the metal base layer 43 is 600 micrometers, the thickness of the second ethylene-tetrafluoroethylene copolymer layer 45 is 100 micrometers, and a plurality of through holes in the metal base layer 43 are arranged in a matrix. The metal base layer 43 is made of aluminum. The semiconductor diode device in the semiconductor diode device layer 3 is a solar cell or a photodetector. The back sheet 5 is a metal back sheet or a TPT back sheet.
Example 2
Referring to fig. 1-3, a semiconductor diode device packaging structure includes a tempered glass plate 1, a resin composite adhesive film 2, a semiconductor diode device layer 3, a metal-resin composite adhesive film 4, and a back plate 5, which are sequentially stacked; the resin composite adhesive film 2 comprises a first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21, a first silica gel resin bonding layer 22, a polyethylene terephthalate base layer 23, a second silica gel resin bonding layer 24 and a first ethylene-tetrafluoroethylene copolymer layer 25 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the polyethylene terephthalate base layer 23 are formed in the polyethylene terephthalate base layer 23, first epoxy resin bonding reinforcement columns 26 are filled in the through holes, and the first epoxy resin bonding reinforcement columns 26 are connected with the first silica gel resin bonding layer 22 and the second silica gel resin bonding layer 24; the metal-resin composite adhesive film 4 comprises a second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41, a third silicone resin bonding layer 42, a metal base layer 43, a fourth silicone resin bonding layer 44 and a second ethylene-tetrafluoroethylene copolymer layer 45 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the metal base layer are formed in the metal base layer 43, second epoxy resin bonding reinforcement columns 46 are filled in the through holes, and the second epoxy resin bonding reinforcement columns 46 are connected with the third silicone resin bonding layer 42 and the fourth silicone resin bonding layer 44. Wherein, the thickness of first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21 is 400 microns, the thickness of first silica gel resin tie coat 22 with second silica gel resin tie coat 24 is 800 nanometers, the thickness of polyethylene terephthalate basic unit 23 is 500 microns, the thickness of first ethylene-tetrafluoroethylene copolymer layer 25 is 200 microns, a plurality of through-holes in the polyethylene terephthalate basic unit 23 are matrix arrangement. The thickness of the second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41 is 500 micrometers, the thickness of the third silica gel resin adhesive layer 42 and the thickness of the fourth silica gel resin adhesive layer 44 are 900 nanometers, the thickness of the metal base layer 43 is 900 micrometers, the thickness of the second ethylene-tetrafluoroethylene copolymer layer 45 is 300 micrometers, and a plurality of through holes in the metal base layer 43 are arranged in a matrix. The metal base layer 43 is made of stainless steel. The semiconductor diode device in the semiconductor diode device layer 3 is a solar cell or a photodetector. The back sheet 5 is a metal back sheet or a TPT back sheet.
Example 3
Referring to fig. 1-3, a semiconductor diode device packaging structure includes a tempered glass plate 1, a resin composite adhesive film 2, a semiconductor diode device layer 3, a metal-resin composite adhesive film 4, and a back plate 5, which are sequentially stacked; the resin composite adhesive film 2 comprises a first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21, a first silica gel resin bonding layer 22, a polyethylene terephthalate base layer 23, a second silica gel resin bonding layer 24 and a first ethylene-tetrafluoroethylene copolymer layer 25 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the polyethylene terephthalate base layer 23 are formed in the polyethylene terephthalate base layer 23, first epoxy resin bonding reinforcement columns 26 are filled in the through holes, and the first epoxy resin bonding reinforcement columns 26 are connected with the first silica gel resin bonding layer 22 and the second silica gel resin bonding layer 24; the metal-resin composite adhesive film 4 comprises a second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41, a third silicone resin bonding layer 42, a metal base layer 43, a fourth silicone resin bonding layer 44 and a second ethylene-tetrafluoroethylene copolymer layer 45 which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the metal base layer are formed in the metal base layer 43, second epoxy resin bonding reinforcement columns 46 are filled in the through holes, and the second epoxy resin bonding reinforcement columns 46 are connected with the third silicone resin bonding layer 42 and the fourth silicone resin bonding layer 44. The thickness of the first ethylene-1-butene-4-methyl-1-pentene copolymer layer 21 is 300 micrometers, the thickness of the first silica gel resin bonding layer 22 is 500 nanometers, the thickness of the second silica gel resin bonding layer 24 is 600 nanometers, the thickness of the polyethylene terephthalate base layer 23 is 400 micrometers, the thickness of the first ethylene-tetrafluoroethylene copolymer layer 25 is 150 micrometers, and a plurality of through holes in the polyethylene terephthalate base layer 23 are arranged in a matrix. The thickness of the second ethylene-1-butene-4-methyl-1-pentene copolymer layer 41 is 300 micrometers, the thickness of the third silica gel resin adhesive layer 42 is 650 nanometers, the thickness of the fourth silica gel resin adhesive layer 44 is 800 nanometers, the thickness of the metal base layer 43 is 750 micrometers, the thickness of the second ethylene-tetrafluoroethylene copolymer layer 45 is 200 micrometers, and a plurality of through holes in the metal base layer 43 are arranged in a matrix. The metal base layer 43 is made of aluminum. The semiconductor diode device in the semiconductor diode device layer 3 is a solar cell or a photodetector. The back sheet 5 is a metal back sheet or a TPT back sheet.
In the resin composite material adhesive film and the metal-resin composite material adhesive film, the through holes are formed in the polyethylene terephthalate base layer or the metal base layer, so that the silica gel resin bonding layers on the two sides of the base layer are connected through the epoxy resin bonding reinforcing columns, the adhesion force and the stability of the composite material adhesive film are improved, and the composite material adhesive film is prevented from being stripped. According to the metal-resin composite material adhesive film, the metal base layer is arranged, so that light penetrating through the semiconductor diode device layer can be effectively reflected, and the utilization rate of the light is improved. According to the invention, the ethylene-1-butene-4-methyl-1-pentene copolymer layer is arranged in the composite material adhesive film close to the side of the semiconductor diode device layer, and the ethylene-tetrafluoroethylene copolymer layer is arranged in the composite material adhesive film far away from the side of the semiconductor diode device layer.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (4)
1. A semiconductor diode device package structure, characterized in that: the semiconductor diode device packaging structure comprises a toughened glass plate, a resin composite adhesive film, a semiconductor diode device layer, a metal-resin composite adhesive film and a back plate which are sequentially laminated;
the resin composite material adhesive film comprises a first ethylene-1-butylene-4-methyl-1-pentene copolymer layer, a first silica gel resin bonding layer, a polyethylene terephthalate base layer, a second silica gel resin bonding layer and a first ethylene-tetrafluoroethylene copolymer layer which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the polyethylene terephthalate base layer are formed in the polyethylene terephthalate base layer, first epoxy resin bonding reinforcing columns are filled in the through holes, and the first epoxy resin bonding reinforcing columns are connected with the first silica gel resin bonding layer and the second silica gel resin bonding layer;
the metal-resin composite adhesive film comprises a second ethylene-1-butene-4-methyl-1-pentene copolymer layer, a third silica gel resin bonding layer, a metal base layer, a fourth silica gel resin bonding layer and a second ethylene-tetrafluoroethylene copolymer layer which are sequentially stacked and close to the semiconductor diode device layer, wherein a plurality of through holes penetrating through the metal base layer are formed in the metal base layer, second epoxy resin bonding reinforcing columns are filled in the through holes, and the second epoxy resin bonding reinforcing columns are connected with the third silica gel resin bonding layer and the fourth silica gel resin bonding layer;
wherein the thickness of the first ethylene-1-butylene-4-methyl-1-pentene copolymer layer is 400 microns, the thickness range of the first silica gel resin bonding layer and the second silica gel resin bonding layer is 800 nanometers from 400 nm, the thickness of the polyethylene terephthalate base layer is 500 microns from 300 nm, the thickness of the first ethylene-tetrafluoroethylene copolymer layer is 200 microns from 100 nm, and a plurality of through holes in the polyethylene terephthalate base layer are arranged in a matrix;
the thickness of the second ethylene-1-butene-4-methyl-1-pentene copolymer layer is 500-5 microns, the thickness of the third silica gel resin bonding layer and the thickness of the fourth silica gel resin bonding layer are 900 nanometers and 500-900 nanometers, the thickness of the metal base layer is 900 microns and 600-300 microns, and a plurality of through holes in the metal base layer are arranged in a matrix.
2. The semiconductor diode device package structure of claim 1, wherein: the metal base layer is made of one of aluminum, copper and stainless steel.
3. The semiconductor diode device package structure of claim 1, wherein: the semiconductor diode device in the semiconductor diode device layer is a solar cell or a photoelectric detector.
4. The semiconductor diode device package structure of claim 1, wherein: the back plate is a metal back plate or a TPT back plate.
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| CN201710496014.0A CN107492578B (en) | 2017-06-26 | 2017-06-26 | Semiconductor diode device packaging structure |
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| CN108389924A (en) * | 2018-04-26 | 2018-08-10 | 海门市品格工业设计有限公司 | A kind of electrooptical device encapsulating structure |
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| CN105990459A (en) * | 2015-02-28 | 2016-10-05 | 汉能新材料科技有限公司 | Flexible package composite film and manufacturing method thereof |
| CN106364100B (en) * | 2016-08-26 | 2018-09-11 | 江苏东鋆光伏科技有限公司 | A kind of composite material film and preparation method thereof for photovoltaic component encapsulating |
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