CN107488046B - Connecting material for connecting silicon carbide ceramics and method for connecting silicon carbide ceramics - Google Patents
Connecting material for connecting silicon carbide ceramics and method for connecting silicon carbide ceramics Download PDFInfo
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- CN107488046B CN107488046B CN201610409492.9A CN201610409492A CN107488046B CN 107488046 B CN107488046 B CN 107488046B CN 201610409492 A CN201610409492 A CN 201610409492A CN 107488046 B CN107488046 B CN 107488046B
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
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- C—CHEMISTRY; METALLURGY
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- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
- C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
Abstract
The invention provides a connecting material for connecting silicon carbide ceramics, which is a left-right laminated structure and comprises at least two titanium layers, wherein a carbon layer is arranged between the adjacent titanium layers. The connecting material is clamped between the silicon carbide ceramic materials to be connected, in the process of connecting the SiC materials to be connected together through an external heat source heating connecting interface, the nanometer titanium layer and the nanometer carbon layer are subjected to exothermic reaction, namely, the middle connecting layer can release partial heat, so that the energy supply of an external heat source is reduced, the cost is saved, and the industrial production difficulty is reduced.
Description
Technical Field
The invention relates to the technical field of silicon carbide ceramic materials, in particular to a connecting material for connecting silicon carbide ceramics, a preparation method thereof and a method for connecting the silicon carbide ceramics by using the connecting material
Background
The silicon carbide ceramic (SiC) has a series of advantages of low neutron activity, strong neutron irradiation resistance, low density, high temperature resistance, oxidation resistance, wear resistance and the like, and is the first choice of a new generation of nuclear fuel cladding material. However, the inherent defects of silicon carbide ceramics, the inherent brittleness and non-deformability of ceramic materials, and the problems with component tooling repair make it very difficult to manufacture complex-shaped silicon carbide ceramic parts, and therefore joining techniques are often required in actual manufacturing to achieve the manufacture of complex-shaped ceramic parts, such as the sealing between a nuclear fuel cladding tube and an end plug. Therefore, the bonding of silicon carbide ceramics is a critical issue.
However, SiC has some properties, such as covalent bond, small diffusion coefficient, inertness, etc., so that its connection is also difficult. At present, as shown in fig. 1, a SiC connection method is that a connection layer is sandwiched between SiC materials to be connected, and a connection interface is heated by an external heat source to reach a certain temperature (i.e., a connection temperature) so as to connect the SiC materials to be connected together, and methods such as active metal brazing, diffusion connection, reaction connection, transient eutectic connection, pre-ceramic precursor connection, glass connection, and the like are mainly used. The connection layer generally used for diffusion connection is mainly a metal foil (Ti foil, Mo foil, Zr foil, etc.); the connection of materials to be connected is realized by mainly adopting a low-temperature activated connecting layer through the regulation and control of interface wettability or interface chemical reaction, such as glass connection, metal brazing and the like, and the connecting materials mainly comprise metal low eutectic soldering flux (Ag-Cu system and the like) and an alumina glass phase (CaO-MgO-SiO)2-Al2O3Systems, etc.) and reactive metals (Ti, Al, Si, etc.). However, the silicon carbide materials need to be connected with each other by an external heat source to provide sufficient heat, so that the cost is high and the industrial production difficulty is high.
Disclosure of Invention
In view of the above technical situation, the present invention aims to provide a connecting material for connecting silicon carbide ceramics, as shown in fig. 1, the connecting material is sandwiched between silicon carbide ceramic materials to be connected, and an external heat source is used to heat a connecting interface, so that the connecting interface reaches a certain temperature (i.e. a connecting temperature), thereby connecting SiC materials to be connected together.
In order to achieve the technical purpose, the connecting material structure is designed into a left-right laminated structure and comprises at least two titanium layers, and a carbon layer is arranged between the adjacent titanium layers, namely the titanium layers are in contact with the silicon carbide material to be connected, so that the interface surface energy of the silicon carbide ceramic material is improved and the reaction activity of the silicon carbide ceramic material is increased by utilizing the high activity of the titanium layers, and the sintering densification between the material to be connected and the middle layer is facilitated; meanwhile, as the carbon layer is added between the adjacent titanium layers, the titanium layers and the carbon layer perform exothermic reaction at a certain connection temperature to release heat, namely, the connection layer can release part of heat, so that connection is promoted, and energy supply of an external heat source is reduced.
In addition, the connecting layer in the prior report is thicker and basically has a thickness more than 20 μm, on one hand, when an external heat source supplies heat to increase the connecting temperature, the heat quantity provided by the required external heat source is increased; on the other hand, the silicon atoms and the carbon atoms diffused from the silicon carbide and the composite material thereof have low concentration in the middle layer, large element distribution range and insufficient reaction, and other brittle phases are easily generated, so that the mechanical strength performance of the connected silicon carbide ceramic material is influenced. Therefore, the thickness of the connecting layer is preferably reduced to 50 nm-10 μm, more preferably 100 nm-1 μm, so that the heat required to be provided by an external heat source is further reduced, the concentrations of silicon atoms and carbon atoms in the intermediate layer are effectively increased, the element distribution is concentrated, the full reaction of three elements of Ti, Si and C is facilitated, the number of generated brittle phases is reduced, and the mechanical strength of a connecting interface is facilitated to be improved.
According to actual needs, the number of layers of the laminated structure is controllable, the thickness of the single-layer titanium layer is controllable, and the thickness of the single-layer carbon layer is controllable. The thickness of the connecting layer and the molar mass ratio of titanium to carbon can be controlled by controlling the thickness and the number of the titanium layers and the carbon layers.
The thickness of the single titanium layer is preferably on the order of nanometers, and more preferably 10nm to 1000 nm.
The thickness of the single-layer carbon layer is preferably on the order of nanometers, and more preferably 10nm to 500 nm.
The silicon carbide ceramic material comprises a pure silicon carbide ceramic material and a composite material taking the pure silicon carbide ceramic material as a matrix, wherein the composite material comprises but is not limited to a carbon fiber reinforced silicon carbide composite material, a silicon carbide fiber reinforced silicon carbide composite material and the like.
The preparation method of the connecting material is not limited, and comprises a Physical Vapor Deposition (PVD) method, a Chemical Vapor Deposition (CVD) method, a tape casting method, a spraying method, an electroplating method and the like. Or alternately preparing titanium layers and carbon layers on the surface of a silicon carbide ceramic material to be connected in sequence, and then preparing a titanium layer to form a connecting layer. As a preferred implementation manner, a PVD method is adopted, sodium chloride is used as a substrate, titanium layers and carbon layers are sequentially and alternately deposited on the surface of the substrate, then a titanium layer is deposited, and finally the deposited sodium chloride substrate is put into water to dissolve the sodium chloride substrate, so as to obtain a laminated free film.
The method for connecting the silicon carbide ceramic materials by using the connecting material is not limited, and comprises the steps of clamping the connecting material between the silicon carbide ceramic materials to be connected along the laminating direction, and then connecting the silicon carbide ceramic materials to be connected together through the connecting layer in a heating connection mode of an external heat source. Or alternately depositing titanium layers and carbon layers on the surface of one silicon carbide ceramic material to be connected in sequence, depositing a titanium layer to form a connecting layer, butting the connecting layer with the surface of the other silicon carbide ceramic material to be connected, and finally connecting the silicon carbide materials to be connected together through the middle connecting layer in an external heat source heating connection mode.
The heating connection mode of the external heat source is not limited, and includes non-pressure heating connection and hot-pressing connection, for example, electric field auxiliary heating connection, hot-pressing connection, microwave field auxiliary heating connection and the like.
In summary, the invention uses the titanium layer and the carbon layer in a composite manner, and alternately laminates the titanium layer and the carbon layer as the intermediate connecting material of the silicon carbide ceramic material, and has the following advantages:
(1) the high-activity titanium layer is beneficial to improving the interface surface energy of the silicon carbide ceramic material, increasing the reaction activity of the silicon carbide ceramic material and being beneficial to sintering densification between the silicon carbide material to be connected and the intermediate connecting layer;
(2) at a certain connection temperature, the nano titanium layer and the nano carbon layer generate exothermic reaction, and the middle connection layer releases a part of heat, so that external energy supply is reduced;
(3) preferably, the thickness of the middle connecting layer is reduced, so that the concentration of atoms diffused from the matrix silicon carbide ceramic material in the middle layer is increased, the full reaction of three elements of Ti, Si and C is facilitated, the connecting temperature of the silicon carbide ceramic material is further reduced, and the mechanical strength performance of a connecting interface can be improved.
Drawings
FIG. 1 is a schematic structural view of a silicon carbide ceramic material to be bonded and a bonding layer in the present invention;
FIG. 2 is a schematic view showing the structure of a laminated composite film in example 2 of the present invention;
FIG. 3 is a scanning electron microscope photograph of interface back scattering of the silicon carbide ceramic material after the connection of the connecting layers in example 1 of the present invention;
FIG. 4 is a scanning electron microscope photograph of interface back scattering of the silicon carbide ceramic material after the connection of the connecting layers in example 2 of the present invention;
FIG. 5 is a scanning electron microscope photograph of interface back scattering of the silicon carbide ceramic material after the connection of the connecting layers in example 3 of the present invention;
FIG. 6 is a scanning electron microscope photograph of interface back scattering of the silicon carbide ceramic material after the connection of the connecting layers in example 4 of the present invention;
Detailed Description
The invention will be described in further detail below with reference to the embodiments of the drawing, which are intended to facilitate the understanding of the invention and are not intended to limit the invention in any way.
Example 1:
in this embodiment, as shown in fig. 1, a material of a connection layer is used to connect silicon carbide ceramic materials to be connected. The materials to be connected are two pieces of silicon carbide with phi 20 x 20mm, the materials of the connecting layer are pure titanium, and the silicon carbide materials to be connected are connected together through the connecting layer by adopting an external heat source heating connection method. The heating connection method of the external heat source is electric field assisted hot pressing connection. The method comprises the following specific steps:
(1) polishing the surface of the silicon carbide to be connected by using 0.1 micron diamond polishing solution to remove larger defects and impurities on the surface;
(2) plating a 500nmTi film on one piece of silicon carbide surface to be connected by a PVD method, and butting the other piece of silicon carbide with the surface of the silicon carbide; and then putting the sample into a graphite mold, then putting the graphite mold into a discharge plasma sintering furnace, and measuring the temperature by an upper pressure head. And (3) supplying current, wherein the heating rate is 100 ℃/min, the temperature is increased to 1100 ℃ of the furnace temperature, the temperature is kept for 5min, 30MPa of pressure is applied to the connection sample in the heating process, and then the temperature is reduced to the room temperature at the rate of 100 ℃/min.
The microscopic appearance of the interface of the intermediate connecting layer of the silicon carbide ceramic material after the treatment is observed by a scanning electron microscope, and a back scattering scanning electron microscope photo is shown in figure 3, which shows that the connecting interface has no cracks obviously parallel to the interface, the connecting layer is compact, the strength is higher, and the interface has no obvious phase contrast.
Example 2:
in this embodiment, as shown in fig. 1, a material of a connection layer is used to connect silicon carbide ceramic materials to be connected. The material to be joined was exactly the same as that in example 1. The connecting layer material is a left-right laminated structure as shown in fig. 2, and comprises 14 Ti films, carbon films are arranged between adjacent Ti films, the thicknesses of the uppermost layer and the lowermost layer of the Ti films are 15nm, the thicknesses of the rest of the Ti films are 30nm, the thicknesses of the carbon films are 10nm, the total thickness of the middle connecting layer after lamination is 520nm, and the molar mass ratio of Ti to C is 1: 0.6. And adopting an external heat source to heat the connection layer to connect the silicon carbide materials to be connected together through the connection layer. The method for heating and connecting the external heat source is basically the same as that of the embodiment 1, and the method is electric field assisted hot-pressing connection and comprises the following specific steps:
(1) polishing the surface of the silicon carbide to be connected by using 0.1 micron diamond polishing solution to remove larger defects and impurities on the surface;
(2) 15nmTi/10nmC/30nmTi/10nmC …, 30nmTi/10nmC/15nmTi are sequentially plated on a silicon carbide surface to be connected by a PVD method, 14 layers of Ti films and 13 layers of C films are counted, the thicknesses of the uppermost layer and the lowermost layer of the titanium films are 15nm, the thicknesses of the rest titanium films are 30nm, and the thicknesses of the carbon films are 10 nm; then, butting the other piece of silicon carbide with the surface of the other piece of silicon carbide; and then putting the sample into a graphite mold, then putting the graphite mold into a discharge plasma sintering furnace, and measuring the temperature by an upper pressure head. And (3) electrifying, heating up at a heating rate of 100 ℃/min, heating to the furnace temperature of 1000 ℃, keeping the temperature for 5min, applying a pressure of 30MPa to the connection sample in the heating process, and then cooling to the room temperature at a rate of 100 ℃/min.
The microscopic appearance of the interface of the intermediate connecting layer of the silicon carbide ceramic material after the treatment is observed by a scanning electron microscope, and a back scattering scanning electron microscope photo is shown in figure 4, which shows that the connecting interface has the interface connecting effect shown in figure 3, the connecting interface has no cracks obviously parallel to the interface, the connecting layer is compact, the strength is higher, and the interface has no obvious phase contrast.
Example 3:
in this embodiment, as shown in fig. 1, a material of a connection layer is used to connect silicon carbide ceramic materials to be connected. The material to be joined was exactly the same as that in example 1. The connecting layer material has basically the same structure as that of the connecting layer material in example 2, and comprises 14 Ti films, and carbon films are arranged between adjacent Ti films. The only difference is that: the thicknesses of the uppermost layer and the lowermost layer of the titanium film are both 2nm, the thicknesses of the rest titanium films are both 4nm, the thicknesses of the carbon films are both 2nm, and the total thickness of the middle connecting layer after lamination is 78 nm. And adopting an external heat source to heat the connection layer to connect the silicon carbide materials to be connected together through the connection layer. The method for heating and connecting the external heat source is basically the same as that of the embodiment 1, and the method is electric field assisted hot-pressing connection and comprises the following specific steps:
(1) polishing the surface of the silicon carbide to be connected by using 0.1 micron diamond polishing solution to remove larger defects and impurities on the surface;
(2) 2nmTi/2nmC/4nmTi/2nmC …, 4nmTi/2nmC/2nmTi are sequentially plated on a piece of silicon carbide surface to be connected by a PVD method, 14 Ti films and 13C films are counted, the thicknesses of the uppermost layer and the lowermost layer of the Ti films are 2nm, the thicknesses of the rest of the Ti films are 4nm, and the thicknesses of the carbon films are 2 nm; then, butting the other piece of silicon carbide with the surface of the other piece of silicon carbide; and then putting the sample into a graphite mold, then putting the graphite mold into a discharge plasma sintering furnace, and measuring the temperature by an upper pressure head. And (3) electrifying, heating up at a heating rate of 100 ℃/min, heating to the furnace temperature of 800 ℃, keeping the temperature for 5min, applying a pressure of 30MPa to the connection sample in the heating process, and then cooling to the room temperature at a rate of 100 ℃/min.
The microscopic appearance of the interface of the intermediate connecting layer of the silicon carbide ceramic material after being treated is observed by a scanning electron microscope, and the back scattering scanning electron microscope photo shows that the connecting interface has the interface connecting effect shown in figure 5, the connecting interface has no cracks obviously parallel to the interface, the connecting layer is compact, the strength is higher, and the interface has no obvious phase contrast.
Example 4:
in this embodiment, as shown in fig. 1, a material of a connection layer is used to connect silicon carbide ceramic materials to be connected. The material to be joined was exactly the same as that in example 1. The connecting layer is of a left-right laminated structure and comprises 19 Ti films, carbon films are arranged between adjacent Ti films, the thicknesses of the uppermost titanium film and the lowermost titanium film are 9nm, the thicknesses of the rest titanium films are 18nm, the thicknesses of the carbon films are 10nm, the total thickness of the connecting layer after lamination is 504nm, and the molar mass ratio of Ti to C is 1: 1. And adopting an external heat source to heat the connection layer to connect the silicon carbide materials to be connected together through the connection layer. The heating connection method of the external heat source is electric field assisted hot pressing connection. The method comprises the following specific steps:
(1) polishing the surface of the silicon carbide to be connected by using 0.1 micron diamond polishing solution to remove larger defects and impurities on the surface;
(2) 9nmTi/10nmC/18nmTi/10nmC …..18nmTi/10nmC/9nmTi is plated on a piece of silicon carbide surface to be connected by a PVD method in sequence, 19 Ti films and 18C films are counted, the thicknesses of the uppermost layer and the lowermost layer of the Ti films are 9nm, the thicknesses of the rest of the Ti films are 18nm, and the thicknesses of the carbon films are 10 nm; then, butting the other piece of silicon carbide with the surface of the other piece of silicon carbide; and then putting the sample into a graphite mold, then putting the graphite mold into a discharge plasma sintering furnace, and measuring the temperature by an upper pressure head. And (3) electrifying, heating up at a heating rate of 100 ℃/min to the furnace temperature of 900 ℃, keeping the temperature for 5min, applying a pressure of 30MPa to the connection sample in the heating process, and then cooling to the room temperature at a rate of 100 ℃/min.
The microscopic appearance of the interface of the intermediate connecting layer of the silicon carbide ceramic material after being treated is observed by a scanning electron microscope, and a back scattering scanning electron microscope photo is shown in figure 6, which shows that the connecting interface is similar to figure 4, no cracks which are obviously parallel to the interface exist, the connecting layer is compact, the strength is higher, and the interface has no obvious phase contrast.
Example 5:
in this embodiment, as shown in fig. 1, a material of a connection layer is used to connect silicon carbide ceramic materials to be connected. The material to be joined was exactly the same as that in example 1. The connecting layer material has the same structure as the connecting layer material in the embodiment 2, and comprises 14 Ti films, carbon films are arranged between the adjacent Ti films, the thicknesses of the uppermost layer and the lowermost layer of the Ti films are 15nm, the thicknesses of the rest of the Ti films are 30nm, the thicknesses of the carbon films of all the layers are 10nm, the total thickness of the middle connecting layer after lamination is 520nm, and the molar mass ratio of Ti to C is 1: 0.6.
And adopting an external heat source to heat the connection layer to connect the silicon carbide materials to be connected together through the connection layer. The method for heating and connecting the external heat source is basically the same as that of the embodiment 1, and the method is electric field assisted hot-pressing connection and comprises the following specific steps:
(1) polishing the surface of the silicon carbide to be connected by using 0.1 micron diamond polishing solution to remove larger defects and impurities on the surface;
(2) plating 15nmTi/10nmC/30nmTi/10nmC …..30nmTi/10nmC/15nmTi in sequence on a sodium chloride substrate by a PVD method, wherein 14 Ti films and 13C films are counted, the thicknesses of the uppermost layer and the lowermost layer of the Ti films are 15nm, the thicknesses of the rest of the Ti films are 30nm, and the thicknesses of the carbon films are 10 nm;
(3) and (3) putting the coated sodium chloride into water to dissolve the sodium chloride, taking out the film, clamping the film between two pieces of silicon carbide to be connected to form a structure similar to a sandwich, putting the structure into a graphite mold, putting the graphite mold into a discharge plasma sintering furnace, and measuring the temperature by an upper pressure head. And (3) electrifying, heating up at a heating rate of 100 ℃/min, heating to the furnace temperature of 1000 ℃, keeping the temperature for 5min, applying a pressure of 30MPa to the connection sample in the heating process, and then cooling to the room temperature at a rate of 100 ℃/min.
The microscopic appearance of the interface of the intermediate connecting layer of the silicon carbide ceramic material after being treated is observed by a scanning electron microscope, and a back scattering scanning electron microscope photo is similar to that shown in figure 4, so that the connecting interface has the interface connecting effect shown in figure 3, the connecting interface has no cracks obviously parallel to the interface, the connecting layer is compact, the strength is higher, and the interface has no obvious phase contrast.
The embodiments described above are intended to illustrate the technical solutions of the present invention in detail, and it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modification, supplement or similar substitution made within the scope of the principles of the present invention should be included in the protection scope of the present invention.
Claims (13)
1. A joining material for joining silicon carbide ceramics, which is sandwiched between silicon carbide ceramic materials to be joined, and which is heated at a joining interface by an external heat source to join SiC materials to be joined together, characterized in that: the connecting material is of a left-right laminated structure and comprises at least two titanium layers, and a carbon layer is arranged between every two adjacent titanium layers;
the thickness of the single-layer titanium layer is 10 nm-1000 nm;
the thickness of the single-layer carbon layer is 10 nm-500 nm;
the thickness of the connecting material is 50 nm-10 mu m.
2. The joining material for joining silicon carbide ceramics according to claim 1, wherein: the thickness of the connecting material is 100 nm-1 μm.
3. The joining material for joining silicon carbide ceramics according to claim 1, wherein: the number of layers of the laminated structure is controllable.
4. The joining material for joining silicon carbide ceramics according to claim 1, wherein: the thickness of the single-layer titanium layer is controllable.
5. The joining material for joining silicon carbide ceramics according to claim 1, wherein: the thickness of the single-layer carbon layer is controllable.
6. The joining material for joining silicon carbide ceramics according to claim 1, wherein: the thickness of the tie layer and the molar mass ratio of titanium to carbon are controlled by controlling the thickness of the titanium layer, the thickness of the carbon layer, and the number of layers.
7. The joining material for joining silicon carbide ceramics according to claim 1, wherein: the silicon carbide ceramic material comprises one or more of a pure silicon carbide ceramic material and a composite material taking the pure silicon carbide ceramic material as a matrix.
8. The joining material for joining silicon carbide ceramics according to claim 7, wherein: the composite material comprises one or more of a carbon fiber reinforced silicon carbide composite material and a silicon carbide fiber reinforced silicon carbide composite material.
9. The method for producing a joining material for joining silicon carbide ceramics according to any one of claims 1 to 8, wherein: preparing titanium layers and carbon layers on the surface of the substrate in sequence, then preparing a titanium layer, and finally removing the substrate; or alternately preparing titanium layers and carbon layers on the surface of a silicon carbide ceramic material to be connected in sequence, and then preparing a titanium layer to form the connecting material.
10. The method for producing a joining material for joining silicon carbide ceramics according to claim 9, wherein: and (2) adopting a PVD method, taking sodium chloride as a matrix, alternately depositing titanium layers and carbon layers on the surface of the matrix in sequence, then depositing a titanium layer, and finally putting the deposited sodium chloride matrix into water to dissolve the sodium chloride matrix to obtain the connecting material.
11. The method for joining silicon carbide ceramics by using the joining material according to any one of claims 1 to 8, wherein: clamping the connecting material between the silicon carbide ceramic materials to be connected, and then connecting the silicon carbide ceramic materials to be connected together through the connecting material in a heating connection mode of an external heat source;
or alternately depositing titanium layers and carbon layers on the surface of one silicon carbide ceramic material to be connected in sequence, depositing a titanium layer to form a connecting material, butting the connecting material with the surface of the other silicon carbide ceramic material to be connected, and finally connecting the silicon carbide ceramic materials to be connected together by adopting an external heat source heating connection mode.
12. The method of joining silicon carbide ceramics according to claim 11 using a joining material, wherein: the heating connection mode of the external heat source comprises pressureless heating connection and hot-pressing connection.
13. The method of joining silicon carbide ceramics according to claim 12 using a joining material, wherein: the heating connection mode comprises an electric field auxiliary heating connection and a microwave field auxiliary heating connection.
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| CN109516828B (en) * | 2018-10-15 | 2021-03-30 | 广东工业大学 | Novel connection method of silicon carbide ceramic for core, silicon carbide ceramic prepared by connection method and application of silicon carbide ceramic |
| CN111087251B (en) * | 2018-10-24 | 2022-02-11 | 中国科学院宁波材料技术与工程研究所 | Connecting material for connecting silicon carbide materials and application thereof |
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