CN107464876A - It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer - Google Patents
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer Download PDFInfo
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- CN107464876A CN107464876A CN201710783863.4A CN201710783863A CN107464876A CN 107464876 A CN107464876 A CN 107464876A CN 201710783863 A CN201710783863 A CN 201710783863A CN 107464876 A CN107464876 A CN 107464876A
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- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 100
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 title claims abstract description 42
- 239000002346 layers by function Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 71
- 239000010410 layer Substances 0.000 claims abstract description 24
- 238000004073 vulcanization Methods 0.000 claims abstract description 24
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 20
- 239000011733 molybdenum Substances 0.000 claims abstract description 20
- 238000001659 ion-beam spectroscopy Methods 0.000 claims abstract description 13
- 230000008859 change Effects 0.000 claims abstract description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 16
- 230000004888 barrier function Effects 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 16
- 239000010949 copper Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 12
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 238000012546 transfer Methods 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- 230000002687 intercalation Effects 0.000 claims description 7
- 238000009830 intercalation Methods 0.000 claims description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 abstract description 15
- 238000002360 preparation method Methods 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000003780 insertion Methods 0.000 abstract description 4
- 230000037431 insertion Effects 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000005240 physical vapour deposition Methods 0.000 description 28
- 230000008569 process Effects 0.000 description 24
- 238000001755 magnetron sputter deposition Methods 0.000 description 14
- 239000007772 electrode material Substances 0.000 description 13
- 239000004065 semiconductor Substances 0.000 description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 229910052961 molybdenite Inorganic materials 0.000 description 8
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 8
- 239000012528 membrane Substances 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8822—Sulfides, e.g. CuS
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
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Abstract
A kind of sandwich structure formed based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, its change resistance layer for boron nitride dielectric film and vulcanization molybdenum film.It is an advantage of the invention that：Change resistance layer uses boron nitride/molybdenum sulfide/boron nitride sandwich structure, for the resistive memory of independent boron nitride or other nitride dielectrics, the insertion of molybdenum sulfide provides room and defect, so that the capture of electric charge is easily realized with release, so as to reduce the operating voltage of device and power consumption, be advantageous to the high-density integrated of resistive memory, and the insertion of molybdenum sulfide will not have an impact to on-off ratio and data holding ability of the independent nitride as the resistive memory of dielectric layer.In the preparation method of change resistance layer, the method for preparing vulcanization molybdenum film altogether The present invention gives ion beam sputtering and chemical vapour deposition technique, it is hereby achieved that large area and the controllable vulcanization molybdenum film of thickness.
Description
Technical field
The present invention relates to technical field of semiconductor memory, and in particular to be by two kinds of inorganic two-dimensional material h-BN and MoS2
It is applied among resistance-variable storing device.
Technical background
With the horizontal raising of semiconductor fabrication process, information industry is rapidly progressed, and information content is continuously increased, device
Part integrated level improves constantly, for the memory requirement also more and more higher of information.Legacy memory can not meet high speed information
The needs of development.Research emphasis is placed on nonvolatile memory by people at this stage, and there is legacy memory to be unable to reach for it
The advantages of.
Conventional nitride is as resistance-variable storing device dielectric layer, it is possible to achieve larger on-off ratio and preferable data keep special
Property, but have a disadvantage in that because nitride has big dielectric constant, stronger dielectric property, so in forming and set
During need bigger operating voltage, and reset process electric currents are larger, cause device power consumption big, are unfavorable for device
High-density integrated.
To reduce forming and set voltage of the independent nitride as the resistive memory of change resistance layer, reset is reduced
Electric current, realize low-power consumption, it is necessary to constantly thinned change resistance layer thickness, this can not only greatly increase the difficulty of film preparation, and
Due to nitride film thickness be thinned will cause device retention performance and stability decline, on-off ratio also can under
Drop.
Traditional resistance-variable storing device is the sandwich structure based on Top electrode-resistive functional layer-bottom electrode, conventional resistive function
Layer uses homogenous material, including inorganic material or organic material mostly.Advantage based on some laminated construction, it is existing much to grind
Study carefully personnel to be placed on research emphasis on the structure of novel laminated structure.It can overcome existing for single layer structure not in laminated construction
Foot, improve the performance of single layer structure.But the shortcomings that using laminated construction, is that the stacking of certain material can be to another material
Some performances of material cause necessarily to influence, and are unavoidably caused when lifting a certain performance of device under other performance
Drop.
The content of the invention
It is an object of the invention to provide a kind of resistance-change memory based on boron nitride/molybdenum sulfide/boron nitride sandwich structure
Device, change resistance layer are boron nitride pellicle and vulcanize the sandwich structure that molybdenum film is formed.The insertion of molybdenum sulfide provides in the structure
Certain room and defect, capture and the release of ion and electronics are easier to occur so that the formation and disconnection of conductive filament
Easily, it can substantially reduce operating voltage for independent nitride resistive memory (forming voltages are less than
2V, set voltage are less than 800mV), and reset current values (1mA is dropped below by 100mA) can be reduced, realize device
Low-power consumption.Molybdenum sulfide is inserted between two layers of boron nitride pellicle to the retention performance of device, stability and opened as intercalation material
Closing ratio will not impact.The present invention gives the side that ion beam sputtering prepares vulcanization molybdenum film with chemical vapor deposition altogether
Method, realize that thickness is controllable and the preparation of the vulcanization molybdenum film of large area.
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, wherein
Change resistance layer is the sandwich structure that boron nitride/molybdenum sulfide/boron nitride is formed, wherein upper and lower boron nitride layer be method of the same race, it is identical
Under the conditions of the boron nitride pellicle for preparing, intermediate layer molybdenum sulfide is inserted among two layers of boron nitride as intercalation material, formed a kind of
Vertical symmetry structure；
The sandwich structure is at the middle and upper levels 1-50nm with the thickness of the boron nitride of lower floor.
The thickness of molybdenum sulfide intercalation is 0.75-10nm in the sandwich structure.
The upper and lower electrode is the active metallic copper of electrical properties, silver, aluminium, one kind in nickel or its combination.
Described vulcanization molybdenum film is prepared altogether using ion beam sputtering with chemical vapour deposition technique, and preparation method is as follows：
1) using Si pieces as substrate, 300nm SiO is prepared using thermal oxidation process2Insulating barrier；
2) in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 1-20nm.
3) Mo films are vulcanized in vacuum tube furnace, ultimately generates vulcanization molybdenum film；
4) by the way of wet method transfer, vulcanization molybdenum film is transferred on bottom BN films；
The advantage of the invention is that：Change resistance layer is using boron nitride/molybdenum sulfide/boron nitride sandwich structure, wherein sulphur
Change molybdenum is inserted among two layers of boron nitride as intercalation material and is used as electric charge capture releasing layer, compared to independent nitride as resistance
The operating voltage (forming voltages are less than 2V, and set voltages are less than 800mV) and reset electric currents of device are reduced for change layer
(1mA is dropped below by 100mA), and low-power consumption can be realized.Molybdenum sulfide is inserted into two layers of boron nitride as intercalation material
The retention performance and on-off ratio of device will not be impacted between film.Active metal electrode material can in the change resistance layer
To form stable conductive filament, and the influence without other conductive mechanisms, so as to considerably increase the stability of device.This hair
The bright method for giving ion beam sputtering and chemical vapor deposition and preparing vulcanization molybdenum film altogether, realize that thickness is controllable and large area
Vulcanization molybdenum film preparation.
Brief description of the drawings
Fig. 1 is the structural representation of the resistance-variable storing device,
In figure：1. bottom electrode；2. boron nitride pellicle I；3.MoS2Film；4. boron nitride pellicle II；5. Top electrode.
Fig. 2 is that the present invention is special as resistance-variable storing device single polarity current-voltage of resistive functional layer based on boron nitride pellicle
Linearity curve,
Fig. 3 is as resistive functional layer and based on boron nitride/molybdenum sulfide/boron nitride sandwich structure based on boron nitride pellicle
Collectively as the current-voltage characteristic curve of the resistance-variable storing device device reset processes of resistive functional layer.
Embodiment
Embodiment 1
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, including
Top electrode, bottom electrode, boron nitride, molybdenum sulfide, overall structure are followed successively by down referring to accompanying drawing 1 (following examples structure all same)
Electrode 1, boron nitride pellicle I 2, MoS2Film 3, boron nitride pellicle II 4, Top electrode 5, wherein boron nitride pellicle use magnetron sputtering
Prepared by method, its thickness is 10nm, and resistive functional layer is boron nitride/molybdenum sulfide/boron nitride Sandwich film.Bottom electrode 1
Material selection 150nm aluminum metal, the material selection 150nm of Top electrode 5 copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 10nm on hearth electrode.
Step 3 prepares 300nm SiO using thermal oxidation process using Si pieces as substrate2Insulating barrier；
Step 4 is in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 10nm；
Step 5 carries out vulcanization to Mo films in the tube furnace of three-temperature-zone and ultimately generates molybdenum sulfide (MoS2) film；
Step 6 is by the way of wet method transfer, by MoS2Film is transferred to the substrate that deposited boron nitride (BN) film
On；
Step 7 displaced MoS by the method for magnetron sputtering2The deposition on substrate boron nitride pellicle of film is thick
Spend for 10nm；
Step 8 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer.
Embodiment 2
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, structure
Same as Example 1, wherein boron nitride pellicle I, II is prepared using magnetically controlled sputter method, and its thickness is 20nm, resistive functional layer
For boron nitride/molybdenum sulfide/boron nitride Sandwich film.Lower electrode material selects 150nm aluminum metal, upper electrode material choosing
With 150nm copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 40nm on hearth electrode.
Step 3 prepares 300nm SiO using thermal oxidation process using Si pieces as substrate2Insulating barrier；
Step 4 is in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 10nm；
Step 5 carries out vulcanization to Mo films in the tube furnace of three-temperature-zone and ultimately generates vulcanization molybdenum film；
Step 6 is by the way of wet method transfer, by MoS2Film is transferred on the substrate that deposited boron nitride pellicle；
Step 7 displaced MoS by the method for magnetron sputtering2The deposition on substrate boron nitride pellicle of film is thick
Spend for 20nm；
Step 8 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer.
Embodiment 3
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, structure
Same as Example 1, wherein boron nitride pellicle I, II is prepared using magnetically controlled sputter method, and its thickness is 30nm, resistive functional layer
For boron nitride/molybdenum sulfide/boron nitride Sandwich film,.Lower electrode material selects 150nm aluminum metal, upper electrode material
From 150nm copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 40nm on hearth electrode.
Step 3 prepares 300nm SiO using thermal oxidation process using Si pieces as substrate2Insulating barrier；
Step 4 is in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 10nm；
Step 5 carries out vulcanization to Mo films in the tube furnace of three-temperature-zone and ultimately generates vulcanization molybdenum film；
Step 6 is by the way of wet method transfer, by MoS2Film is transferred on the substrate that deposited boron nitride pellicle；
Step 7 displaced MoS by the method for magnetron sputtering2The deposition on substrate boron nitride pellicle of film is thick
Spend for 30nm；
Step 8 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer.
Embodiment 4
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, structure
Same as Example 1, wherein boron nitride pellicle I, II is prepared using magnetically controlled sputter method, and its thickness is 40nm, resistive functional layer
For boron nitride/molybdenum sulfide/boron nitride Sandwich film,.Lower electrode material selects 150nm aluminum metal, upper electrode material
From 150nm copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 40nm on hearth electrode.
Step 3 prepares 300nm SiO using thermal oxidation process using Si pieces as substrate2Insulating barrier；
Step 4 is in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 10nm；
Step 5 carries out vulcanization to Mo films in the tube furnace of three-temperature-zone and ultimately generates vulcanization molybdenum film；
Step 6 is by the way of wet method transfer, by MoS2Film is transferred on the substrate that deposited boron nitride pellicle；
Step 7 displaced MoS by the method for magnetron sputtering2The deposition on substrate boron nitride pellicle of film is thick
Spend for 40nm；
Step 8 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer.
Embodiment 5
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, structure
Same as Example 1, wherein boron nitride pellicle I, II is prepared using magnetically controlled sputter method, and its thickness is 50nm, resistive functional layer
For boron nitride/molybdenum sulfide/boron nitride Sandwich film,.Lower electrode material selects 150nm aluminum metal, upper electrode material
From 150nm copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 50nm on hearth electrode.
Step 3 prepares 300nm SiO using thermal oxidation process using Si pieces as substrate2Insulating barrier；
Step 4 is in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 10nm；
Step 5 carries out vulcanization to Mo films in the tube furnace of three-temperature-zone and ultimately generates vulcanization molybdenum film；
Step 6 is by the way of wet method transfer, by MoS2Film is transferred on the substrate that deposited boron nitride pellicle；
Step 7 displaced MoS by the method for magnetron sputtering2The deposition on substrate boron nitride pellicle of film is thick
Spend for 50nm；
Step 8 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer.
Embodiment 6
A kind of resistive memory by the use of boron nitride pellicle as resistive functional layer, including Top electrode, bottom electrode, nitridation
Boron, wherein boron nitride pellicle are prepared using magnetically controlled sputter method, and its thickness is 20nm, and resistive functional layer is boron nitride pellicle.Under
Electrode material selects 150nm aluminum metal, and upper electrode material selects 150nm copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 20nm on hearth electrode.
Step 3 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer, and the device is a kind of unipolarity resistive memory, can be with
Realize that unipolarity operates, as shown in Figure 2.
Embodiment 7
It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, including
Top electrode, bottom electrode, boron nitride, molybdenum sulfide, wherein boron nitride pellicle are prepared using magnetically controlled sputter method, and its thickness is 10nm,
Resistive functional layer is boron nitride/molybdenum sulfide/boron nitride Sandwich film,.Lower electrode material selects 150nm aluminum metal,
Upper electrode material selects 150nm copper metal.
The preparation method of the resistance-variable storing device is as follows：
Step 1 passes through PVD (physical vapor deposition) process deposits 150nm thickness on an insulating substrate
Aluminum metal is as bottom electrode；
Step 2 utilizes the method cvd nitride boron membrane of magnetron sputtering, thickness 10nm on hearth electrode.
Step 3 prepares 300nm SiO using thermal oxidation process using Si pieces as substrate2Insulating barrier；
Step 4 is in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 20nm；
Step 5 carries out vulcanization to Mo films in the tube furnace of three-temperature-zone and ultimately generates vulcanization molybdenum film；
Step 6 is by the way of wet method transfer, by MoS2Film is transferred on the substrate that deposited boron nitride pellicle；
Step 7 displaced MoS by the method for magnetron sputtering2The deposition on substrate boron nitride pellicle of film is thick
Spend for 10nm；
Step 8 is by copper metal thick PVD (physical vapor deposition) process deposits 150nm as upper
Electrode；
Electrology characteristic is tested by Semiconductor Parameter Analyzer.
Fig. 3 is as resistive functional layer and based on boron nitride/molybdenum sulfide/boron nitride sandwich structure based on boron nitride pellicle
Collectively as the current-voltage characteristic curve of the resistance-variable storing device device reset processes of resistive functional layer.As can be seen from the figure
The insertion of molybdenum sulfide greatly reduces operating voltage (being reduced to 0.7V from 1.25V) and reset electric currents (are reduced to from 10 μ A
1nA), device power consumption is greatly reduced.
Example 1-7 test result summary sheet：
Claims (5)
- It is 1. a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer, its feature It is：Wherein change resistance layer is the sandwich structure that boron nitride/molybdenum sulfide/boron nitride is formed, wherein upper and lower boron nitride layer is of the same race The boron nitride pellicle prepared under method, the same terms, intermediate layer molybdenum sulfide are inserted among two layers of boron nitride as intercalation material, Form a kind of structure symmetrical above and below.
- It is 2. according to claim 1 based on boron nitride/molybdenum sulfide/resistance of the boron nitride sandwich structure as resistive functional layer Transition storage, it is characterised in that：The sandwich structure is at the middle and upper levels 1-50nm with the thickness of the boron nitride of lower floor.
- It is 3. according to claim 1 based on boron nitride/molybdenum sulfide/resistance of the boron nitride sandwich structure as resistive functional layer Transition storage, it is characterised in that：The thickness of molybdenum sulfide intercalation is 0.75-10nm in the sandwich structure.
- It is 4. according to claim 1 based on boron nitride/molybdenum sulfide/resistance of the boron nitride sandwich structure as resistive functional layer Transition storage, it is characterised in that：The upper and lower electrode is one kind in the active metallic copper of electrical properties, silver, aluminium, nickel.
- It is 5. according to claim 1 based on boron nitride/molybdenum sulfide/resistance of the boron nitride sandwich structure as resistive functional layer Transition storage, it is characterised in that：Described vulcanization molybdenum film is prepared altogether using ion beam sputtering with chemical vapour deposition technique, is prepared Method is as follows：1) using Si pieces as substrate, 300nm SiO is prepared using thermal oxidation process2Insulating barrier；2) in SiO2Ion beam sputtering method deposited metal Mo films are used on insulating barrier, its thickness is 1-20nm；3) Mo films are vulcanized in vacuum tube furnace, ultimately generates vulcanization molybdenum film；4) by the way of wet method transfer, vulcanization molybdenum film is transferred on bottom BN films.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710783863.4A CN107464876A (en) | 2017-09-04 | 2017-09-04 | It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710783863.4A CN107464876A (en) | 2017-09-04 | 2017-09-04 | It is a kind of based on boron nitride/molybdenum sulfide/resistance-variable storing device of the boron nitride sandwich structure as resistive functional layer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110491991A (en) * | 2019-08-20 | 2019-11-22 | 西安工业大学 | It is a kind of to prepare hydro-thermal method MoS2The method of multistage resistance-variable storing device |
| CN111916558A (en) * | 2020-07-29 | 2020-11-10 | 桂林电子科技大学 | Memristor with h-BN as intermediate intercalation |
| CN113241406A (en) * | 2021-04-30 | 2021-08-10 | 桂林电子科技大学 | Two-dimensional material resistive random access memory and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110491991A (en) * | 2019-08-20 | 2019-11-22 | 西安工业大学 | It is a kind of to prepare hydro-thermal method MoS2The method of multistage resistance-variable storing device |
| CN111916558A (en) * | 2020-07-29 | 2020-11-10 | 桂林电子科技大学 | Memristor with h-BN as intermediate intercalation |
| CN111916558B (en) * | 2020-07-29 | 2023-06-27 | 桂林电子科技大学 | Memristor with h-BN as intermediate intercalation |
| CN113241406A (en) * | 2021-04-30 | 2021-08-10 | 桂林电子科技大学 | Two-dimensional material resistive random access memory and preparation method thereof |
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