CN107452890A - A kind of transmission-type OLED minitype displayer part and preparation method based on SOI - Google Patents
A kind of transmission-type OLED minitype displayer part and preparation method based on SOI Download PDFInfo
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- CN107452890A CN107452890A CN201710365146.XA CN201710365146A CN107452890A CN 107452890 A CN107452890 A CN 107452890A CN 201710365146 A CN201710365146 A CN 201710365146A CN 107452890 A CN107452890 A CN 107452890A
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- soi
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
Abstract
The present invention relates to a kind of transmission-type OLED minitype displayer part and preparation method based on SOI.The micro display device includes：Silicon oxide layer, circuit layer, display layer, optical modulation layer, supporting layer, silicon oxide layer, circuit layer, display layer, optical modulation layer, supporting layer are set gradually；Circuit layer and display layer are arranged on silicon oxide layer, and circuit layer is used to drive display layer to show, optical modulation layer is used to adjust the light that display layer is sent, and supporting layer is used to protecting and supporting micro display device.By implement the present invention, the volume of optics module can be effectively reduced, at the same can solve the problem that from bottom device pass through ambient light the problem of, than the application that common silicon substrate miniscope is more suitable for the field such as augmented reality and defence medical treatment.
Description
Technical field
The present invention relates to display area, more specifically to a kind of transmission-type OLED minitype displayer based on SOI
Part and preparation method.
Background technology
Main configuration of the display device as present smart machine, its performance requirement more and more higher, is particularly minimized
Electronic equipment, such as in the field such as augmented reality and defence medical treatment, it is desirable to the size of display screen is less and less, but display now
It is in technology to use prism more, cause the volume of optics module excessive, it is impossible to adapt to requirement of the electronic equipment to display screen.
Silicon on insulated substrate (Silicon On Insulator, SOI), is a kind of new integrated circuit fabrication process
Structure, it is possible to achieve the medium isolation of component in integrated circuit, completely eliminate the parasitic breech lock effect in Bulk CMOS circuit
Should；Because its speed is high, low in energy consumption, integration density is high, radiation resistance is manufacture imaging sensor and miniscope by force
Good technique.
In addition, the printing opacity of bottom device in existing Display Technique be present.
The content of the invention
The technical problem to be solved in the present invention is, for prior art above-mentioned optics module volume it is excessive the defects of,
A kind of transmission-type OLED minitype displayer part and preparation method based on SOI are provided.
The technical solution adopted for the present invention to solve the technical problems is：It is micro- to construct a kind of transmission-type OLED based on SOI
Escope part, including：Silicon oxide layer, circuit layer, display layer, optical modulation layer, supporting layer, the silicon oxide layer, circuit layer, show
Show that layer, optical modulation layer, supporting layer are set gradually；
The circuit layer and the display layer are arranged on the silicon oxide layer, and the circuit layer is used to drive the display
Layer display, the optical modulation layer are used to adjust the light that the display layer is sent, and the supporting layer is miniature for protecting and supporting
Display device.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the display layer are sent out for OLED
Photo structure.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the optical modulation layer is by micro-
Lens array forms.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the microlens array is by just
Anti- two kinds of lenticules combine.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the supporting layer pass through bonding
Agent is pasted onto on the optical modulation layer.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the supporting layer are transparent glass
Glass substrate.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the circuit layer are driving electricity
Road.
Preferably, the transmission-type OLED minitype displayer part of the present invention based on SOI, the silicon oxide layer are in exhausted
On edge body silicon-on.
In addition, the present invention also constructs a kind of transmission-type OLED minitype displayer part preparation method based on SOI, including：
S1：Silicon oxide layer is set on peel ply；
S2：Circuit layer and display layer are made on the silicon oxide layer；
S3：Optical modulation layer is coupled on the display layer；
S4：Supporting layer is pasted on the optical modulation layer；
S5：The peel ply is removed by chemically-mechanicapolish polishing.
Preferably, the transmission-type OLED minitype displayer part preparation method of the present invention based on SOI, the silica
Layer is on silicon on insulated substrate；The circuit layer is drive circuit；The display layer is OLED ray structures；The light is adjusted
Preparative layer is made up of microlens array, and the microlens array is combined by positive and negative two kinds of lenticules；The supporting layer is transparent
Glass substrate.
Implement a kind of the transmission-type OLED minitype displayer part and preparation method based on SOI of the present invention., have with following
Beneficial effect：The micro display device includes：Silicon oxide layer (2), circuit layer (3), display layer (4), optical modulation layer (5), supporting layer
(6), silicon oxide layer (2), circuit layer (3), display layer (4), optical modulation layer (5), supporting layer (6) are set gradually；Circuit layer (3) and
Display layer (4) is arranged on silicon oxide layer (2), and circuit layer (3) is used to drive display layer (4) to show, optical modulation layer (5) is used to adjust
The light that whole display layer (4) sends, supporting layer (6) are used to protecting and supporting micro display device.By implementing the present invention, can have
Effect reduce optics module volume, while can solve the problem that from bottom device pass through ambient light the problem of, than common silicon-base miniature
Display is more suitable for the application in the field such as augmented reality and defence medical treatment.
Brief description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
Fig. 1 is a kind of structural representation of the transmission-type OLED minitype displayer part based on SOI of the present invention；
Fig. 2 is a kind of schematic flow sheet of the transmission-type OLED minitype displayer part preparation method based on SOI of the present invention.
Embodiment
In order to which technical characteristic, purpose and the effect of the present invention is more clearly understood, now compares accompanying drawing and describe in detail
The embodiment of the present invention.
Fig. 1 is a kind of structural representation of the transmission-type OLED minitype displayer part based on SOI of the present invention.
Specifically, the micro display device includes：Silicon oxide layer 2, circuit layer 3, display layer 4, optical modulation layer 5, supporting layer
6, silicon oxide layer 2, circuit layer 3, display layer 4, optical modulation layer 5, supporting layer 6 are set gradually；
Circuit layer 3 and display layer 4 are arranged on silicon oxide layer 2, and circuit layer 3 is used to drive display layer 4 to show, optical modulation layer
5 are used to adjust the light that display layer 4 is sent, and supporting layer 6 is used to protecting and supporting micro display device.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, display layer 4 are OLED ray structures.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, optical modulation layer 5 is by microlens array
Composition.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, microlens array are micro- by positive and negative two kinds
Lens combination forms.Can improve OLED display effect and human eye to the observing effect of transmitted ambient light.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, supporting layer 6 are pasted by adhesive
On optical modulation layer 5.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, supporting layer 6 are transparent glass substrate.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, circuit layer 3 are drive circuit.
Preferably, the transmission-type OLED minitype displayer part of the invention based on SOI, silicon oxide layer 2 are on insulator
On silicon structure.
Fig. 2 is a kind of schematic flow sheet of the transmission-type OLED minitype displayer part preparation method based on SOI of the present invention.
The transmission-type OLED minitype displayer part preparation method based on SOI, including：
S1：Silicon oxide layer 2 is set on peel ply 1；
S2：Circuit layer 3 and display layer 4 are made on silicon oxide layer 2；
S3：On display layer 4 couple optical modulation layer 5, optical modulation layer 5 can improve OLED display effect and human eye to saturating
Penetrate the observing effect of ambient light.
S4：Supporting layer 6 is pasted on optical modulation layer 5, plays protection and supporting role.
S5：Peel ply 1 is removed by chemically-mechanicapolish polishing (chemico-mechanical polishing, CMP).
Preferably, the transmission-type OLED minitype displayer part preparation method of the invention based on SOI, silicon oxide layer 2 are in exhausted
On edge body silicon-on (Silicon On Insulator, SOI).
Circuit layer 3 is drive circuit, and circuit layer 3 is used to drive display layer 4 to show.
Display layer 4 is OLED ray structures.
Optical modulation layer 5 is made up of microlens array, and microlens array is combined by positive and negative two kinds of lenticules；Supporting layer 6
For transparent glass substrate.
By implementing the present invention, the volume of optics module can be effectively reduced, while can solve the problem that from bottom device and pass through ring
The problem of environmental light, than the application that common silicon substrate miniscope is more suitable for the field such as augmented reality and defence medical treatment.
Above example only technical concepts and features to illustrate the invention, its object is to allow person skilled in the art
Scholar can understand present disclosure and implement accordingly, can not limit the scope of the invention.It is all to be wanted with right of the present invention
The equivalent changes and modifications that scope is done are sought, the covering scope of the claims in the present invention all should be belonged to.
Claims (10)
- A kind of 1. transmission-type OLED minitype displayer part based on SOI, it is characterised in that including：Silicon oxide layer (2), circuit layer (3), display layer (4), optical modulation layer (5), supporting layer (6), the silicon oxide layer (2), circuit layer (3), display layer (4), light are adjusted Preparative layer (5), supporting layer (6) are set gradually；The circuit layer (3) and the display layer (4) are arranged on the silicon oxide layer (2), and the circuit layer (3) is used to drive Display layer (4) display, the optical modulation layer (5) are used to adjust the light that the display layer (4) is sent, the supporting layer (6) it is used to protecting and supporting micro display device.
- 2. the transmission-type OLED minitype displayer part according to claim 1 based on SOI, it is characterised in that the display Layer (4) is OLED ray structures.
- 3. the transmission-type OLED minitype displayer part according to claim 1 based on SOI, it is characterised in that the light is adjusted Preparative layer (5) is made up of microlens array.
- 4. the transmission-type OLED minitype displayer part according to claim 3 based on SOI, it is characterised in that described micro- Lens array is combined by positive and negative two kinds of lenticules.
- 5. the transmission-type OLED minitype displayer part according to claim 1 based on SOI, it is characterised in that the support Layer (6) is pasted onto on the optical modulation layer (5) by adhesive.
- 6. the transmission-type OLED minitype displayer part according to claim 1 based on SOI, it is characterised in that the support Layer (6) is transparent glass substrate.
- 7. the transmission-type OLED minitype displayer part according to claim 1 based on SOI, it is characterised in that the circuit Layer (3) is drive circuit.
- 8. the transmission-type OLED minitype displayer part according to claim 1 based on SOI, it is characterised in that the oxidation Silicon layer (2) is on silicon on insulated substrate.
- A kind of 9. transmission-type OLED minitype displayer part preparation method based on SOI, it is characterised in that including：S1：Silicon oxide layer (2) is set on peel ply (1)；S2：Circuit layer (3) and display layer (4) are made on the silicon oxide layer (2)；S3：Optical modulation layer (5) is coupled on the display layer (4)；S4：Supporting layer (6) is pasted on the optical modulation layer (5)；S5：The peel ply (1) is removed by chemically-mechanicapolish polishing.
- 10. the transmission-type OLED minitype displayer part preparation method according to claim 9 based on SOI, it is characterised in that The silicon oxide layer (2) is on silicon on insulated substrate；The circuit layer (3) is drive circuit；The display layer (4) is OLED ray structures；The optical modulation layer (5) is made up of microlens array, and the microlens array is by positive and negative two kinds of lenticule groups Conjunction forms；The supporting layer (6) is transparent glass substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710365146.XA CN107452890A (en) | 2017-05-22 | 2017-05-22 | A kind of transmission-type OLED minitype displayer part and preparation method based on SOI |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710365146.XA CN107452890A (en) | 2017-05-22 | 2017-05-22 | A kind of transmission-type OLED minitype displayer part and preparation method based on SOI |
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| CN107452890A true CN107452890A (en) | 2017-12-08 |
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| US20130069558A1 (en) * | 2011-03-07 | 2013-03-21 | Emagin Corporation | Stacked, non-inverted dielectrically isolated, organic light emitting diode display formed on a silicon-on-insulator based substrate and method of same |
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| CN103744212A (en) * | 2013-12-12 | 2014-04-23 | 中国电子科技集团公司第五十五研究所 | Method of manufacturing high-contrast transmission type silicon-substrate liquid crystal micro display screen |
| CN104081257A (en) * | 2011-12-06 | 2014-10-01 | 奥斯坦多科技公司 | Spatio-optical and temporal spatio-optical directional light modulators |
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| US7816225B2 (en) * | 2008-10-30 | 2010-10-19 | Corning Incorporated | Methods and apparatus for producing semiconductor on insulator structures using directed exfoliation |
| US20130069558A1 (en) * | 2011-03-07 | 2013-03-21 | Emagin Corporation | Stacked, non-inverted dielectrically isolated, organic light emitting diode display formed on a silicon-on-insulator based substrate and method of same |
| US8975832B2 (en) * | 2011-03-07 | 2015-03-10 | Emagin Corporation | Stacked, non-inverted dielectrically isolated, organic light emitting diode display formed on a silicon-on-insulator based substrate and method of same |
| CN102375238A (en) * | 2011-11-08 | 2012-03-14 | 中国科学院上海光学精密机械研究所 | Micro cylindrical mirror array for generating uniform illumination and designing method thereof |
| CN104081257A (en) * | 2011-12-06 | 2014-10-01 | 奥斯坦多科技公司 | Spatio-optical and temporal spatio-optical directional light modulators |
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Application publication date: 20171208 |
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