CN107452847A - A kind of high-penetration high colour purity display screen LED materials and its manufacture method - Google Patents
A kind of high-penetration high colour purity display screen LED materials and its manufacture method Download PDFInfo
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- CN107452847A CN107452847A CN201710803848.1A CN201710803848A CN107452847A CN 107452847 A CN107452847 A CN 107452847A CN 201710803848 A CN201710803848 A CN 201710803848A CN 107452847 A CN107452847 A CN 107452847A
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- led
- filtering material
- aluminium
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- penetration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/305—Materials of the light emitting region containing only elements of group III and group V of the periodic system characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
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Abstract
The invention discloses a kind of high-penetration high colour purity display screen LED materials and its manufacture method, the LED materials are specifically made up of LED chip and filtering material, and wherein filtering material is using the filtering material and yttrium-aluminium-garnet extinction powder that can pass through wavelength 600nm 620nm；LED chip is specially using GaAs substrate, using AlGaInP semiconductor as core body, two distribution of electrodes are added with by AlGaInP semiconductor gross mass 1.3% phosphorus, 0.8% indium, 0.2% gallium and 1.1% aluminium in the N-type electrode on the surface of device and bottom wherein in AlGaInP semiconductor core body.The light intensity of the present invention is high, wave-length coverage is small, penetrability is strong, anti-aging, suitable for the control of the remote signals such as traffic signals, beacon and propagation or outdoor advertising etc..
Description
Technical field
The present invention relates to display material field, more particularly to a kind of high-penetration high colour purity display screen LED materials and its system
Make method.
Background technology
LED display（LED display）It is a kind of flat-panel monitor, is made up of LED module panel small one by one, is used
To show the equipment of the various information such as word, image, video, video signal.
LED, light emitting diode（Light emitting diode abridge）.It is one kind by controlling semiconductor light emitting
The display mode of diode, by gallium（Ga）With arsenic（As）, phosphorus（P）, nitrogen（N）, indium（In）Compound made of diode, work as electricity
Son with that can give off visible ray during hole-recombination can be used for that light emitting diode is made.It is used as and refers in circuit and instrument
Show lamp, or composition word or numerical monitor.Gallium arsenide phosphide diode glows, gallium phosphide diode green light, GaAs two
Pole pipe Yellow light-emitting low temperature, indium gallium nitrogen diode blue light-emitting.
But veiling glare can be filtered out by not yet occurring one kind on the market, obtain the high-penetration LED light source of High-strength pure orange light so that
Need not having using the occasion of high-purity high-penetration light source in the control of the remote signals such as traffic signals, beacon and propagation or outdoor advertising etc.
There are applicable LED materials.
Therefore, be badly in need of that a kind of light intensity is high, wave-length coverage is small, penetrability is strong, anti-aging on the market, suitable for traffic signals,
The remote signals such as beacon are controlled and propagated or the display screen LED materials of outdoor advertising etc..
The content of the invention
For drawbacks described above present in prior art, the present invention is intended to provide a kind of light intensity is high, wave-length coverage is small, penetrates
Property it is strong, anti-aging, control and propagate suitable for remote signals such as traffic signals, beacons or the high colour purity of high-penetration of outdoor advertising etc.
Display screen LED materials and its manufacture method.
To achieve these goals, the present invention uses following technical scheme：A kind of high colour purity display screen LED materials of high-penetration
Material, the LED materials are specifically made up of LED chip and filtering material, and wherein filtering material is using permeable wavelength 600nm-620nm
Filtering material and yttrium-aluminium-garnet extinction powder；LED chip is specially using GaAs substrate, using AlGaInP semiconductor as core
Body, two distribution of electrodes wherein press AlGaInP in AlGaInP semiconductor core body in the N-type electrode on the surface of device and bottom
Semiconductor gross mass is added with 1.3% phosphorus, 0.8% indium, 0.2% gallium and 1.1% aluminium.
The above-mentioned high colour purity display screen manufacture method of LED materials of high-penetration, comprises the following steps：
1）The preparation of filtering material
1. prepare grating and optical filter that can be by wavelength for 600nm-620nm light waves；
2. prepare yttrium-aluminium-garnet extinction powder；
3. prepare the light transmissive material that light transmittance is not less than 98%；
4. 2. yttrium-aluminium-garnet extinction powder that step prepares is sprayed on 3. light transmissive material that step obtains, reserves and LED is sent out
The adaptable blank space of light group shape does not spray；
5. 1. grating and optical filter that step prepares are arranged on LED illuminator and the step straight line that 4. blank space is connected
On, that is, obtain needed for filtering material；
2）It is prepared by LED chip
1. prepare AlGaInP semiconductor photoelectric device raw material, and the phosphorus of example addition 1.3%, 0.8% in mass ratio in the feed
Indium, 0.2% gallium and 1.1% aluminium；
2. prepare the thick gallium arsenide substrates of 80nm-150nm；
3. the semiconductor-based LED core body of AlGaInP is directly produced by way of slowly growing in gallium arsenide substrate；
4. addition makes electric current can be with the N-type electrode of longitudinal flow on the semiconductor-based LED core body of AlGaInP, and makes two electrodes
It is separately positioned on the upper surface and bottom of core body；
5. 100 DEG C of -120 DEG C of stabilization processes 20min-30min are used, i.e. LED chip needed for acquisition；
3）LED material final moldings
1. filtering material and LED chip are assembled, i.e. the high colour purity display screen LED materials of high-penetration needed for acquisition.
Compared with the prior art, the present invention has advantages below as a result of such scheme：Different from the prior art
LED light source intuitively use the setting of yellow red-emitting, Optical Chromatography that the way of routine techniques can send LED is impure, debates knowledge
Degree reduces, when need to increase debate knowledge and magnanimity occasion it is inapplicable or unprofessional, according to correlative study, in the recognizable spectrum of human eye,
Feux rouges penetration power is most strong but colour developing unobvious, and light intensity is inadequate, and blue most bright but penetration power is inadequate, and orange light penetration power is only second to red
Light and debate knowledge and magnanimity height, light intensity is enough, is optimum high-penetration light in misty rain weather, thus the present invention clearly filter out very much orange light
Light in addition simultaneously has the function that to amplify light intensity and focuses on collection thing by special filter；AlGaInP semiconductor light source
What is sent is the Huang based on orange, supplemented by reddish blue, and the GaAs substrate is then the orange most suitable material of light of reflection
Expect, be used to absorb and scatter a part of blue light in the yttrium-aluminium-garnet routine techniques for inhaling ripple, in fact, working as blue light and feux rouges
When light intensity is less than to a certain degree, it can play preferably absorption and scattering process, set off key light orange light and more become clear, pass through light
The collective effect of grid and optical filter purifies and focuses on orange light, is allowed to obtain highest concentration degree, more preferable colour purity and optimal
Penetration power, such light optimum are used for the control of the remote signals such as traffic signals, beacon and propagation or outdoor advertising etc.；Additionally add
The material added can make orange light ratio in the light of the original generation of the present invention continue to increase, while can also be obviously improved the present invention's
High temperature resistant acts on, and make it that heat waste is smaller, can be obviously improved the working life of the present invention.
Embodiment
Embodiment 1：
A kind of high colour purity display screen LED materials of high-penetration, the LED materials are specifically made up of LED chip and filtering material, wherein
Filtering material is using the filtering material and yttrium-aluminium-garnet extinction powder that can pass through wavelength 600nm-620nm；LED chip be specially with
GaAs is substrate, using AlGaInP semiconductor as core body, two distribution of electrodes the surface of device and bottom N-type electrode,
By AlGaInP semiconductor gross mass added with 1.3% phosphorus, 0.8% indium, 0.2% wherein in AlGaInP semiconductor core body
Gallium and 1.1% aluminium.
The above-mentioned high colour purity display screen manufacture method of LED materials of high-penetration, comprises the following steps：
1）The preparation of filtering material
1. prepare grating and optical filter that can be by wavelength for 600nm-620nm light waves；
2. prepare yttrium-aluminium-garnet extinction powder；
3. prepare the light transmissive material that light transmittance is not less than 98%；
4. 2. yttrium-aluminium-garnet extinction powder that step prepares is sprayed on 3. light transmissive material that step obtains, reserves and LED is sent out
The adaptable blank space of light group shape does not spray；
5. 1. grating and optical filter that step prepares are arranged on LED illuminator and the step straight line that 4. blank space is connected
On, that is, obtain needed for filtering material；
2）It is prepared by LED chip
1. prepare AlGaInP semiconductor photoelectric device raw material, and the phosphorus of example addition 1.3%, 0.8% in mass ratio in the feed
Indium, 0.2% gallium and 1.1% aluminium；
2. prepare the thick gallium arsenide substrates of 100nm；
3. the semiconductor-based LED core body of AlGaInP is directly produced by way of slowly growing in gallium arsenide substrate；
4. addition makes electric current can be with the N-type electrode of longitudinal flow on the semiconductor-based LED core body of AlGaInP, and makes two electrodes
It is separately positioned on the upper surface and bottom of core body；
5. 110 DEG C of stabilization processes 25min are used, i.e. LED chip needed for acquisition；
3）LED material final moldings
1. filtering material and LED chip are assembled, i.e. the high colour purity display screen LED materials of high-penetration needed for acquisition.
Embodiment 2：
It is overall consistent with embodiment 1, it is in place of difference：
The above-mentioned high colour purity display screen manufacture method of LED materials of high-penetration, comprises the following steps：
2）It is prepared by LED chip
2. prepare the thick gallium arsenide substrates of 80nm；
5. 100 DEG C of stabilization processes 20min are used, i.e. LED chip needed for acquisition；
Embodiment 3：
It is overall consistent with embodiment 1, it is in place of difference：
The above-mentioned high colour purity display screen manufacture method of LED materials of high-penetration, comprises the following steps：
2）It is prepared by LED chip
2. prepare the thick gallium arsenide substrates of 150nm；
5. 120 DEG C of stabilization processes 30min are used, i.e. LED chip needed for acquisition；
The foregoing description of the disclosed embodiments, only for enabling professional and technical personnel in the field to realize or using this hair
It is bright.A variety of modifications to these embodiments will be apparent for those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, originally
Invention is not intended to be limited to the embodiments shown herein, and is to fit to and principles disclosed herein and features of novelty
Consistent most wide scope.
Claims (2)
1. a kind of high colour purity display screen LED materials of high-penetration, the LED materials are specifically made up of LED chip and filtering material, its
It is characterised by：Wherein filtering material is using the filtering material and yttrium-aluminium-garnet extinction powder that can pass through wavelength 600nm-620nm；
LED chip be specially using GaAs substrate, using AlGaInP semiconductor as core body, two distribution of electrodes on the surface of device and
In the N-type electrode of bottom, wherein AlGaInP semiconductor core body by AlGaInP semiconductor gross mass added with 1.3% phosphorus,
0.8% indium, 0.2% gallium and 1.1% aluminium.
2. the manufacture method of the high colour purity display screen LED materials of high-penetration according to claim 1, it is characterised in that including with
Lower step：
1）The preparation of filtering material
1. prepare grating and optical filter that can be by wavelength for 600nm-620nm light waves；
2. prepare yttrium-aluminium-garnet extinction powder；
3. prepare the light transmissive material that light transmittance is not less than 98%；
4. 2. yttrium-aluminium-garnet extinction powder that step prepares is sprayed on 3. light transmissive material that step obtains, reserves and LED is sent out
The adaptable blank space of light group shape does not spray；
5. 1. grating and optical filter that step prepares are arranged on LED illuminator and the step straight line that 4. blank space is connected
On, that is, obtain needed for filtering material；
2）It is prepared by LED chip
1. prepare AlGaInP semiconductor photoelectric device raw material, and the phosphorus of example addition 1.3%, 0.8% in mass ratio in the feed
Indium, 0.2% gallium and 1.1% aluminium；
2. prepare the thick gallium arsenide substrates of 80nm-150nm；
3. the semiconductor-based LED core body of AlGaInP is directly produced by way of slowly growing in gallium arsenide substrate；
4. addition makes electric current can be with the N-type electrode of longitudinal flow on the semiconductor-based LED core body of AlGaInP, and makes two electrodes
It is separately positioned on the upper surface and bottom of core body；
5. 100 DEG C of -120 DEG C of stabilization processes 20min-30min are used, i.e. LED chip needed for acquisition；
3）LED material final moldings
1. filtering material and LED chip are assembled, i.e. the high colour purity display screen LED materials of high-penetration needed for acquisition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710803848.1A CN107452847A (en) | 2017-09-08 | 2017-09-08 | A kind of high-penetration high colour purity display screen LED materials and its manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710803848.1A CN107452847A (en) | 2017-09-08 | 2017-09-08 | A kind of high-penetration high colour purity display screen LED materials and its manufacture method |
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| CN107452847A true CN107452847A (en) | 2017-12-08 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171884A (en) * | 2005-03-09 | 2008-04-30 | 飞利浦拉米尔德斯照明设备有限责任公司 | Illumination system comprising a radiation source and a fluorescent material |
| CN101978516A (en) * | 2008-03-21 | 2011-02-16 | 皇家飞利浦电子股份有限公司 | A luminous device |
| CN105602563A (en) * | 2016-03-14 | 2016-05-25 | 宁波江东索雷斯电子科技有限公司 | Preparation method of yttrium-aluminum-garnet-doped rare-earth high-luminance fluorescent powder |
-
2017
- 2017-09-08 CN CN201710803848.1A patent/CN107452847A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101171884A (en) * | 2005-03-09 | 2008-04-30 | 飞利浦拉米尔德斯照明设备有限责任公司 | Illumination system comprising a radiation source and a fluorescent material |
| CN101978516A (en) * | 2008-03-21 | 2011-02-16 | 皇家飞利浦电子股份有限公司 | A luminous device |
| CN105602563A (en) * | 2016-03-14 | 2016-05-25 | 宁波江东索雷斯电子科技有限公司 | Preparation method of yttrium-aluminum-garnet-doped rare-earth high-luminance fluorescent powder |
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Application publication date: 20171208 |