CN107437589A - A kind of OLED of the inverted structure containing coating - Google Patents

A kind of OLED of the inverted structure containing coating Download PDF

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Publication number
CN107437589A
CN107437589A CN201710680644.3A CN201710680644A CN107437589A CN 107437589 A CN107437589 A CN 107437589A CN 201710680644 A CN201710680644 A CN 201710680644A CN 107437589 A CN107437589 A CN 107437589A
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oled
coating
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孙可
孙可一
蔡辉
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Changchun Haipurunsi Technology Co Ltd
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Changchun Haipurunsi Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H10K85/636—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising heteroaromatic hydrocarbons as substituents on the nitrogen atom
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs

Abstract

The present invention provides a kind of OLED of the inverted structure containing coating; include glass substrate, reflecting layer, cathode layer, organic function layer, anode layer and its coating stacked gradually; the OLED of the present invention; by the way that traditional OLED structure is inverted; the metallic cathode easily aoxidized is placed in device bottom; covered with machine functional layer, anode layer and coating on cathode layer, reach the effect for protecting negative electrode not corroded by moisture and oxygen.In addition, the coating by two kinds of different compound groups in such as Formulas I into the refractive index of coating can be effectively improved.

Description

A kind of OLED of the inverted structure containing coating
Technical field
The present invention relates to technical field of organic electroluminescence, and in particular to a kind of OLED devices of the inverted structure containing coating Part.
Background technology
Organic electroluminescent (OLED) device, which has, includes luminescent layer and a pair of electrodes in luminescent layer both sides is formed.When When applying electric field between two electrodes, electronics is injected by negative pole, and hole is injected by positive pole, electronics and hole weight in luminescent layer Excitation state newly is combined to form, launches light when excitation state returns to energy caused by ground state.OLED luminescent devices have hi-vision The advantages of quality, rapid response speed and wide viewing angle, and therefore can realize light and thin type information display device.In recent years, OLED was sent out The application field of optical device has extended to the information display device of other high quality from mobile phone.
But traditional OLED display device has the problem of luminous efficiency and bad service life more, wherein important One side reason is that the packaged type of device is thin-film package, and in the process, packaging film may produce tiny passage, So that the moisture and oxygen in environment touch OLED display device.And the negative electrode on upper strata often uses the higher metal of activity, The failure of device is easily produced after being contacted with moisture and oxygen.
In addition, when conventional bottom emitting organic electroluminescence device is applied to active driving organic electroluminescence display, will The problem of display device pixel-driving circuit and display light-emitting area compete with one another for occurs, the aperture opening ratio of device is affected. Therefore, current organic electroluminescence device is usually by the way of top emitting.In top emitting organic electroluminescence device, send Light at a certain angle from organic layer to negative electrode when, because the refractive index of film layer is different, full transmitting can occur for some light, so Just only some light is utilized.
The content of the invention
In order to solve the above-mentioned technical problem, the present invention provides a kind of OLED of the inverted structure containing coating, including It is as follows：
Glass substrate, reflecting layer, cathode layer, organic function layer, anode layer and its coating stacked gradually from top to bottom, The coating by any two kinds of different compound groups in such as following formula I into：
Wherein, R1、R2Independent is selected from substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C7-C60 aralkyls Any one in base, substituted or unsubstituted C6-C60 aryl amines, substituted or unsubstituted C3-C50 heteroaryls,
N is selected from 0,1 or 2.
Preferably, R1、R2Independent is fragrant selected from substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted C7-C30 Any one in alkyl, substituted or unsubstituted C6-C30 aryl amines, substituted or unsubstituted C3-C30 heteroaryls.
Preferably, any one of Formulas I in structure shown in following compound 1- compounds 62：
。
Preferably, the coating is made up of compound 5 and compound 21：
Preferably, the ratio between two kinds of different compound by weight are in the coating：1:19 to 1:(1/19).
Preferably, the coating is included as any two kinds of different compound groups shown in Formulas I into and described any two Planting the ratio between different compound by weight is：1:4；1:2；1:1；1:0.5；1:0.25.
Preferably, described reflector material is Ag, Al or Pt.
Preferably, described organic function layer includes electron injecting layer, electron transfer layer, organic luminous layer, hole transport Layer, hole injection layer.
Beneficial effects of the present invention：
The OLED of the present invention, by the way that traditional OLED structure is inverted, the metallic cathode easily aoxidized is put In device bottom, covered with machine functional layer, anode layer and coating on cathode layer, reach and protect negative electrode not by moisture and oxygen The effect of gas cut erosion.In addition, the coating by two kinds of different compound groups in such as Formulas I into can effectively improve and cover Refractive index of cap rock.
Brief description of the drawings
Fig. 1 is the profile of the OLED of the inverted structure of the invention containing coating.
Embodiment
In order that the above objects, features and advantages of the present invention can be more obvious understandable, below in conjunction with the accompanying drawings to this hair Bright embodiment elaborates.Many details are elaborated in the following description in order to fully understand this hair It is bright.But the present invention can be to be much different from other methods described here to implement, those skilled in the art can not disobey Similar popularization is done in the case of carrying on the back intension of the present invention, therefore the present invention is not limited to the specific embodiments disclosed below.
Referring to Fig. 1, Fig. 1 is the profile of the OLED of the inverted structure of the invention containing coating.The present invention, which contains, to be covered The OLED of the inverted structure of cap rock, including glass substrate 1, reflecting layer 2, negative electrode 3, the You Jigong stacked gradually from top to bottom Ergosphere 4, anode 5 and coating 6.The coating by any two kinds of different compound groups in such as following formula I into：
Wherein, R1、R2Independent is selected from substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C7-C60 aralkyls Any one in base, substituted or unsubstituted C6-C60 aryl amines, substituted or unsubstituted C3-C50 heteroaryls,
N is selected from 0,1 or 2.
Preferably, R1, R2 independence is fragrant selected from substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted C7-C30 Any one in alkyl, substituted or unsubstituted C6-C30 aryl amines, substituted or unsubstituted C3-C30 heteroaryls.
Preferably, any one of Formulas I in structure shown in following compound 1- compounds 62：
Preferably, the coating is made up of compound 5 and compound 21：
Preferably, the ratio between two kinds of different compound by weight are in the coating：1:19 to 1:(1/19).More preferably , the coating is included as any two kinds of different compound groups shown in Formulas I into and any two kinds of different chemical combination Thing weight ratio is：1:4；1:2；1:1；1:0.5；1:0.25.
The OLED of the present invention, described is covered as what is be made up of the compound of two kinds of different structures in compound I Mixture forms, and its principle is that mixture compares single compound, due to the effect of phase separation, in the condition of same thickness Under, refractive index is higher.Therefore the coating being made up of mixture, can improve the extraction efficiency to light.
The OLED of the present invention, the described material of substrate 1 is glass.
The described material of reflecting layer 2 is Ag, Al or Pt.
The present invention it is OLED further improvement is that, the described material of reflecting layer 2 is preferably Al.
The OLED of the present invention, described cathode material is Mg, Al, Ca, Ba, Ag or alloy.
The OLED of the present invention, described organic function layer include electron injecting layer, the electricity stacked gradually from top to bottom Sub- transport layer, luminescent layer, hole transmission layer, hole injection layer, it is preferred that organic function layer includes what is stacked gradually from top to bottom Electron injecting layer, electron transfer layer, luminescent layer, hole transmission layer.
The present invention OLED, described electron injecting layer material selection cesium carbonate, cesium chloride, cesium fluoride, LiF or Lithium carbonate, it is preferred that electron injecting layer material selects LiF.
The OLED of the present invention, the selection of described electron transport layer materials PBD, BND, TPBi, BPhen, Alq3, TPQ Or TAZ, it is preferred that electron transport layer materials select BPhen.
The OLED of the present invention, the luminescent layer adulterates blue light guest materials using Blue-light emitting host material, described Blue-light emitting host material be mCP.
The OLED of the present invention, described blue light guest materials are the conventional blue light complex containing Ir in the art, Preferably, described blue light guest materials is Firpic.
The OLED of the present invention, described blue light guest materials is 2% to 10% in the doping ratio of material of main part, excellent Choosing, blue light guest materials doping content is 8wt%.
The OLED of the present invention, it is preferred that described hole transmission layer is NPB.
The OLED of the present invention, described anode material is ITO or IZO, it is preferred that anode material ITO.
OLED of the present invention is the OLED of inverted structure, and light is launched from top device, and provided with reflection Layer 2 is used as shady face, therefore solves absorption and transmitting problem of the substrate to light well.The presence of coating 6 significantly carries The high luminous efficiency of device, the mixture that coating 6 is made up of two kinds of materials are formed, and can so improve the folding of coating 6 Penetrate rate.
The OLED of inverted structure of the invention containing coating can be prepared as follows：
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, on glass substrate 1 prepare a layer thickness be 100nm Metal/Al Ref layer 2, preparation method include evaporation, Sputtering, chemical vapor deposition, electrochemical deposition etc., it is preferred that preparation method is sputtering.
3rd, evaporation Ag, Ge, Ag alloy is as negative electrode, first layer Ag thickness degree on metallic reflector evaporation 2 15nm, second layer Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/s。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
6th, maintain above-mentioned vacuum constant, continue the following compound I compositions of two kinds of different structures of evaporation on anode Organic coating layer, thickness 35nm, evaporation rate 0.2nm/s.
7th, encapsulate.
Illustrate below by specific embodiment：
Embodiment 1
It is compound 5 to be prepared for coating composition：The mass ratio of compound 21 is 1:4 inverted OLED device, prepare Process is as follows：
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, the Metal/Al Ref layer 2 that a layer thickness is 100nm is prepared on glass substrate 1.
3rd, evaporation Ag, Ge, Ag Alloy is as negative electrode, first time Ag thickness degree on metallic reflector evaporation 2 15nm, second layer Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/s。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
6th, maintain above-mentioned vacuum constant, continue the weight ratio that evaporation is made up of compound 5 and compound 21 on anode For 1:The organic coating layer of 4 mixture composition, thickness 35nm, evaporation rate 0.2nm/s.
Embodiment 2
It is compound 5 to be prepared for coating composition：The mass ratio of compound 21 is 1:2 inverted OLED device, prepare Process is as follows：
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, the Metal/Al Ref layer 2 that a layer thickness is 100nm is prepared on glass substrate 1.
3rd, evaporation Ag, Ge, Ag alloy is as negative electrode, first time Ag thickness degree on metallic reflector evaporation 2 15nm, second layer Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/s。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
6th, maintain above-mentioned vacuum constant, continue the weight ratio that evaporation is made up of compound 5 and compound 21 on anode For 1:The organic coating layer of 2 mixture composition, thickness 35nm, evaporation rate 0.2nm/s.
Embodiment 3
It is compound 5 to be prepared for coating composition：The mass ratio of compound 21 is 1:1 inverted OLED device, prepare Process is as follows：
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, the Metal/Al Ref layer 2 that a layer thickness is 100nm is prepared on glass substrate 1.
3rd, evaporation Ag, Ge, Ag alloy is as negative electrode, first time Ag thickness degree on metallic reflector evaporation 2 15nm, second layer Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/s。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
6th, maintain above-mentioned vacuum constant, continue the weight ratio that evaporation is made up of compound 5 and compound 21 on anode For 1:The organic coating layer of 1 mixture composition, thickness 35nm, evaporation rate 0.2nm/s.
Embodiment 4
It is compound 5 to be prepared for coating composition：The mass ratio of compound 21 is 2:1 inverted OLED device, prepare Process is as follows：
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, the Metal/Al Ref layer 2 that a layer thickness is 100nm is prepared on glass substrate 1.
3rd, evaporation Ag, Ge, Ag alloy is as negative electrode, first time Ag thickness degree on metallic reflector evaporation 2 15nm, second layer Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/s。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
6th, maintain above-mentioned vacuum constant, continue the weight ratio that evaporation is made up of compound 5 and compound 21 on anode For 2:The organic coating layer of 1 mixture composition, thickness 35nm, evaporation rate 0.2nm/s.
Embodiment 5
It is compound 5 to be prepared for coating composition：The mass ratio of compound 21 is 4:1 inverted OLED device, prepare Process is as follows：
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, the Metal/Al Ref layer 2 that a layer thickness is 100nm is prepared on glass substrate 1.
3rd, evaporation Ag, Ge, Ag alloy is as negative electrode, first time Ag thickness degree on metallic reflector evaporation 2 15nm, second layer Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/s。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
6th, maintain above-mentioned vacuum constant, continue the weight ratio that evaporation is made up of compound 5 and compound 21 on anode For 4:The organic coating layer of 1 mixture composition, thickness 35nm, evaporation rate 0.2nm/s.
Comparative example 1
First, now substrate of glass 1 is ultrasonically treated 15 minutes with toluene, acetone, ethanol and deionized water successively, is put into baking oven Dry stand-by.
2nd, the Metal/Al Ref layer 2 that a layer thickness is 100nm is prepared on glass substrate 1.
3rd, Ag, Ge, Ag are deposited on metallic reflector evaporation 2 as negative electrode, first time Ag thickness degree is 15nm, the Two layers of Ge thickness degree are 5nm, and third layer Ag thickness degree is 5nm, evaporation rate 0.015nm/s.
4th, maintain above-mentioned vacuum constant, be deposited successively on negative electrode electron injecting layer LiF, electron transfer layer BPhen, Luminescent layer (mCP：8%FIrpic), hole transmission layer NPB, thickness are respectively 2nm, 30nm, 30nm, 30nm, and evaporation rate is 0.15nm/。
5th, maintain above-mentioned vacuum constant, anodes of the 10nm ITO as device is sputtered on organic function layer, uses O2 Plasma treatment 3min.
Measure embodiment 1：The luminescent properties of comparative sample and embodiment
Comparative sample and embodiment are using Keithley SMU235, PR650 evaluation negative electrodes light transmittance, current efficiency And device lifetime, the results are shown in Table 1：
The characteristics of luminescence of luminescent device prepared by the embodiment of the present invention of table 1
As can be seen from Table 1, the device service life after inversion significantly improves；Coating uses two kinds of differences in Formulas I Compound group into mixture, the current efficiency and negative electrode transmissivity of device increase.
Although the present invention has carried out special description with exemplary embodiment, but it is understood that without departing from claim In the case of the spirit and scope of the invention limited, those of ordinary skill in the art can carry out various forms and details to it On change.

Claims (8)

1. a kind of OLED of the inverted structure containing coating, it is characterised in that including the glass stacked gradually from top to bottom Substrate, reflecting layer, cathode layer, organic function layer, anode layer and its coating, the coating is by any two in such as following formula I Kind different compound groups into：
Wherein, R1、R2Independent is selected from substituted or unsubstituted C6-C60 aryl, substituted or unsubstituted C7-C60 aralkyl, takes Generation or unsubstituted C6-C60 aryl amines, substituted or unsubstituted C3-C50 heteroaryls in any one,
N is selected from 0,1 or 2.
2. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that R1、R2Independent choosing From substituted or unsubstituted C6-C30 aryl, substituted or unsubstituted C7-C30 aralkyl, substituted or unsubstituted C6-C30 virtues Any one in amido, substituted or unsubstituted C3-C30 heteroaryls.
3. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that Formulas I is selected from as follows Any one in structure shown in compound 1- compounds 62：
4. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that the coating by Compound 5 and compound 21 form：
5. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that in the coating The ratio between two kinds of different compound by weight are：1:19 to 1:(1/19).
6. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that the coating bag Containing as any two kinds of different compound groups shown in Formulas I into and the ratio between described any two kinds of different compound by weight are：1: 4；1:2；1:1；1:0.5；1:0.25.
7. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that described reflecting layer Material is Ag, Al or Pt.
8. the OLED of the inverted structure according to claim 1 containing coating, it is characterised in that described organic work( Ergosphere includes electron injecting layer, electron transfer layer, organic luminous layer, hole transmission layer, hole injection layer.
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WO2021217805A1 (en) * 2020-04-27 2021-11-04 武汉华星光电半导体显示技术有限公司 Organic material, and preparation method therefor and application thereof

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CN105590944A (en) * 2014-10-24 2016-05-18 上海和辉光电有限公司 OLED flexible display device
CN105590948A (en) * 2014-11-06 2016-05-18 三星显示有限公司 Organic light-emitting device and method of fabricating the same
CN106654049A (en) * 2016-12-29 2017-05-10 上海天马有机发光显示技术有限公司 Capping layer, OLED display panel comprising capping layer and electronic device

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WO2021217805A1 (en) * 2020-04-27 2021-11-04 武汉华星光电半导体显示技术有限公司 Organic material, and preparation method therefor and application thereof
CN112038501A (en) * 2020-09-08 2020-12-04 长春海谱润斯科技股份有限公司 Top-emitting organic electroluminescent device
CN112038501B (en) * 2020-09-08 2021-08-10 长春海谱润斯科技股份有限公司 Top-emitting organic electroluminescent device

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Application publication date: 20171205