CN107431464A - Emission amplifier for the amplified signal in wireless transmitting system - Google Patents
Emission amplifier for the amplified signal in wireless transmitting system Download PDFInfo
- Publication number
- CN107431464A CN107431464A CN201680019890.8A CN201680019890A CN107431464A CN 107431464 A CN107431464 A CN 107431464A CN 201680019890 A CN201680019890 A CN 201680019890A CN 107431464 A CN107431464 A CN 107431464A
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- CN
- China
- Prior art keywords
- amplifier
- stage
- emission
- final stage
- door
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2178—Class D power amplifiers; Switching amplifiers using more than one switch or switching amplifier in parallel or in series
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
Abstract
A kind of it is proposed that emission amplifier for being used for the amplified signal in wireless transmitting system.The emission amplifier has pre-amplifier stage and amplifier final stage, and the amplifier final stage couples with the pre-amplifier stage.Amplifier final stage is formed and is configured for by door component, and the signal of institute's feed-in is provided as amplified output signal in outlet side.Compact and favourable emission amplifier can be provided by using door component, the emission amplifier has about 90% efficiency.
Description
Technical field
The present invention relates to one kind be used in wireless transmitting system, for example for battery pack, particularly to electric car
The emission amplifier of amplified signal in the system of battery pack charging in.
Background technology
To electric vehicle（So-called E-Car（Electric car））In battery pack carry out inductive charging in the case of, except
Actual charging antenna in earth station（Ladeantenne）Outside the reception antenna with rectifier on motor vehicle, also
The hair of the specific wireless peripheral applications being used between motor vehicle and earth station of other antennas including the antenna must be integrated with
Send and reception system.The peripheral applications are for example including the vehicle location inspection for license of charging, space monitoring（That is, ground
Gap between motor vehicle）, in inductive charging check material（Materialien）Either biology or in general
Include the data exchange of the charging receiving station in charging earth station and motor vehicle.Because in this unit on motor vehicle or
The temperature more than 80 DEG C is likely to occur during charging process in earth station, therefore, it is desirable that, the side of the peripheral applications one
Face is developed to heatproof, and on the other hand the loss power of its loss power, especially emission amplifier should be minimized,
That is, efficiency should be as high as possible, so as not to further improve the temperature in amplifier and therefore step-down amplifier mistake by self-heating
The probability of effect.
The content of the invention
Under this background, task of the invention is, there is provided a kind of emission amplifier, the emission amplifier have height
Efficiency.
Correspondingly suggest a kind of transmitting amplification for being used for the amplified signal in the wireless transmitting system for sensor application
Device.The emission amplifier has：Pre-amplifier stage and amplifier final stage, the amplifier final stage and the preamplifier
Level coupling.Amplifier final stage is formed and is configured for by door component, is believed the signal of institute's feed-in as amplified output
Number outlet side provide.
So-called buffer also can be regarded as a component, and the buffer can be considered as the spy with the door of only one input
Different situation.Therefore, term is only referred to mostly for simplicity below:Door OR gate component.
Therefore amplifier final stage is designed to, pass through the signal of institute's feed-in（Namely the switching signal manipulated）Defeated
Go out side and high-frequency power is provided.The signal of institute's feed-in can be supplied to by the amplifier final stage as amplified output signal
One or two output end of amplifier final stage.
Pre-amplifier stage can have an output end or two complementary output ends.In the first scenario, put
The input of big device final stage couples with the output end of pre-amplifier stage.In the latter case, the two of the amplifier final stage
Individual input couples with two complementary output ends of the pre-amplifier stage.
Amplifier final stage is as manipulating balanced to ground（erdsymmetrisch）The switching amplifier of load is by reality
It is existing, therefore it provides two output signals complimentary to one another of equal-wattage in principle.
Proposed emission amplifier uses door component at least in amplifier final stage.This door component be cost it is low and
With high efficiency, because this door component is used as switching amplifier.Additionally, amplify transmitting using this door component
The cramped construction mode of device is possible.
It means that it can realize that the switch closely for wireless transmitting system amplifies using favourable door component
Device final stage.This in the case of using other structures module in cost in terms of for be difficult be implemented and be difficult with so high effect
Rate is implemented.
Door component can be different gate components, and the gate component is combined in a suitable manner, so as to structure
Into amplifier final stage.Possible design is described more particularly below.
In proposed emission amplifier, pre-amplifier stage is for the amplification between oscillator and amplifier final stage
And with fundamental frequency in a manner of almost inactivity（Nutzfrequenz）The amplifier final stage is switched over.According to amplifier
Depending on the embodiment of final stage, pre-amplifier stage provides two manipulation signals complimentary to one another or only one manipulation signal.
In one embodiment, amplifier final stage is respectively by identical door component（It is anti-phase or noninverting）Composition.
In order to manipulate then using the pre-amplifier stage with two output signals complimentary to one another.Need described two complimentary to one another
Signal, so as to be manipulated the final stage as the switching amplifier of the load for balanced to ground with phase inversion system.
This is set forth in more detail in the following embodiments.
According to a kind of embodiment, door component is CMOS doors component or CMOS buffer.
Door component can be implemented by field-effect transistor, such as MOSFET.In this case, it is possible to use p-channel
MOSFET and n-channel MOSFET.
According to another embodiment, pre-amplifier stage is equilibrium stage（Symmetriestufe）And it is configured for
The control signal of complementation is provided for amplifier stage.
According to this embodiment, pre-amplifier stage is used to be balanced the signal of institute's feed-in.
According to another embodiment, pre-amplifier stage has（Only）One output for being used to manipulate amplifier final stage
End.Preferably, the amplifier final stage is constructed using different door components in this case.
According to another embodiment, amplifier final stage is made up of Part I and Part II, wherein, described first
Dividing preferably has the door component of equal number of different door types with the Part II.
In the case, a half portion of amplifier final stage includes anti-phase door component and another half portion then comprising noninverting
Door component, this therefore again cause complementation output signal.This can be considered as combined equilibrium stage and amplifier final stage.
According to another embodiment, amplifier final stage has multiple two-door components.In the case, two anti-phase doors
（Or buffer）Or two noninverting doors（Or buffer）It is bonded in a component, which save space and cost.
If two-door component is wired in amplifier final stage so that amplifier final stage is in being to provide two complementary output signals, excellent
Two complementary output signals of equal-wattage are selected, then the two-door component respectively with an anti-phase door and a noninverting door
It is and possible.
According to another embodiment, amplifier final stage has four two-door components.
Here, a half portion of amplifier final stage includes two anti-phase two-door components, and another half portion then includes two
Noninverting two-door component.
According to another embodiment, two control signals complimentary to one another are supplied to amplifier last by pre-amplifier stage
Level.According to another embodiment, amplifier final stage is made up of Part I and Part II, wherein, the Part I and
The Part II preferably has the door component of equal number of identical door type.Then amplifier final stage by same type door
Component is formed.
According to this embodiment, pre-amplifier stage is used to be balanced the signal of institute's feed-in.The signal of institute's feed-in
It can be generated by oscillator.The oscillator can be a part for emission amplifier device.
In order to provide the manipulation signal of complementation, such as can also use defeated with noninverting Q1 output ends and anti-phase Q2
Go out the trigger at end.Because this trigger halves incoming frequency, oscillator can be by this embodiment
Design so that the oscillator vibrates under double operation frequency.Instead of the preamplifier with two complementary output ends
Level, may be inserted into trigger.Because the output end of trigger is essentially complimentary to one another, the institute of ensuing amplifier final stage
Stating two half-unit must be constructed in the same fashion, namely in a manner of anti-phase or be noninverting.If for manipulating trigger
Oscillator amplitude be insufficient to, herein above the pre-amplifier stage with an output end can also be installed.
According to another embodiment, in order to provide the transmission signal of oscillator or amplifier final stage in a complementary fashion,
Pre-amplifier stage has at least one anti-phase door component and a noninverting door component.
According to another embodiment, the pre-amplifier stage being balanced has for when component is run on the door
Between the circuitous that compensates（Umwegleitung）.The circuitous can also be made up of passive, discrete device.
, can be by circuitous or other passive parts in order to compensate two not run-time differences between fellow disciple
Compensate the run-time difference.
Using quick door species（Gatterfamilie）In the case of, the emission amplifier can reach until
90% transmission signal efficiency.This is applied to the frequency range until 100MHz.In the case of significantly higher frequency perhaps no longer
90% efficiency can be reached.
According on the other hand, it is proposed that a kind of system being used for battery pack charging.It is described be used for be to battery pack charging
System has wireless transmitting system, and the wireless transmitting system has emission amplifier as described above.The transmitting amplification
Device can be used for different sensor applications herein.
As discussed abovely, the emission amplifier can be for battery pack, the battery pack of such as electric vehicle
Carry out the application for being used for periphery in the system of contactless charging, such as Safety monitoring.Here, the emission amplifier is not
It is used to oneself charge to battery pack, and be used to sensor application and/or peripheral applications, wherein the sensor application
And/or peripheral applications occur under the system situation for being charged to battery pack.
Other of the invention possible embodiments also include it is no it is detailed refer to before or below in relation to embodiment institute
The combination of the feature or embodiment of description.Here, those skilled in the art can also using single aspect as improvement project or
Additional project is added to the corresponding citation form of the present invention.
Brief description of the drawings
Other favourable designs and aspect of the present invention are the themes of dependent claims and discussed below
The theme of the embodiment of the present invention.The present invention is explained in more detail according to preferred embodiment referring additionally to institute's accompanying drawing.
Fig. 1 show in wireless transmitting system a kind of embodiment of the emission amplifier of amplified signal it is schematic
Block diagram；
Fig. 2 shows the circuit diagram for another embodiment of the emission amplifier of amplified signal in wireless transmitting system；With
Fig. 3 shows a kind of circuit diagram of embodiment of the trigger for being balanced to signal.
Embodiment
As long as no other explanation, in figure, identical or function identical element are equipped with identical reference.
Fig. 1 shows a kind of embodiment for the emission amplifier 100 of amplified signal in wireless transmitting system.It is complementary
Output signal be implemented in such case by different door types in the two half-unit of amplifier final stage 20.
Emission amplifier 100 has pre-amplifier stage, and the pre-amplifier stage has only one output end.
Switching amplifier final stage or amplifier final stage 20 can be made up of multiple components 21.The door component 21 for example may be used
To be CMOS door components.
Emission amplifier 100 is configured for, and is amplified input signal and is supplied to as amplified output signal and is put
Two output ends of big device final stage 20.
By using door component 21, emission amplifier 100 can as switching amplifier in a manner of compact, favourable and
It is implemented with about 90% high efficiency.
The emission amplifier 100 in addition to manipulation and with oscillator 1 and for output coupling and with impedance
With device 2 and the transmitting antenna of balanced to ground 3.The element is explained in more detail in reference picture 2.Impedance-matching device can also wrap
Containing low pass filter, to suppress the harmonic wave of the output signal of rectangle in the case of needs.
Figure 2 illustrates another example of the design of the emission amplifier 100 under conditions of using door component.
In the case, complementary manipulation is implemented by different doors in pre-amplifier stage 10.Amplifier final stage 20 utilizes herein
Identical door is implemented, and the door can be steered with phase inversion system in two half-unit.
Oscillator 1 provides signals to pre-amplifier stage 10.Here by two different door components 11 form into
The pre-amplifier stage 10 of row balance.For example, a door component 11 is anti-phase and a door component 11 is noninverting.
Pre-amplifier stage 10 is used for, and amplifier final stage 20 is provided signals in complementary fashion by oscillator 1.It is described to put
Big device final stage 20 is for example made up of four two-door components 22 of same type.The two-door component 22 of other numbers is equally possible,
Wherein, should preferably be such that in each amplifier half portion with equal number of door.If the two-door component of odd number is set altogether, then
A door of an amplifier half portion and another door of another amplifier half portion should be added in the case of one of described component.
Described two amplifier final stage output ends are connected on transmitting antenna 3 via impedance-matching device 2.The impedance
Coalignment 2 is used for, and compensates the impedance contrast between amplifier and transmitting antenna 3 and suppresses the humorous of output signal when necessary
Ripple.
Signal through impedance matching is then delivered to transmitting antenna 3.The transmitting antenna for example can be butterfly transmitting
Antenna.
Instead of different door components 11（Fig. 2）Equilibrium stage 10 can be formed by trigger.Touched figure 3 illustrates such
Send out the example of device.The trigger has noninverting Q1 output ends and anti-phase Q2 output ends herein.
Although describing the present invention according to embodiment, the present invention can change in many ways.
Claims (15)
1. a kind of be used in wireless transmitting system, particularly for amplified signal in the wireless transmitting system of sensor application
Emission amplifier（100）, the emission amplifier has：
Pre-amplifier stage（10）With
Amplifier final stage（20）, the amplifier final stage and the pre-amplifier stage（10）Coupling,
Wherein, the amplifier final stage（20）By door component（21）Form, and wherein described amplifier final stage（20）It is set up
For the signal of institute's feed-in to be provided as amplified output signal in outlet side.
2. emission amplifier according to claim 1, it is characterised in that
The pre-amplifier stage（10）Output end and the amplifier final stage（20）Input coupling or it is described preposition
Two complementary output ends of amplifier stage couple with two inputs of the amplifier final stage.
3. emission amplifier according to claim 1 or 2, it is characterised in that
The door component（21）It is CMOS door components.
4. according to the emission amplifier described in any one in claim 1-3, it is characterised in that
The amplifier final stage（20）It is switching amplifier.
5. according to the emission amplifier described in any one in claim 1-4, it is characterised in that
The pre-amplifier stage（10）It is equilibrium stage and is configured for as the amplifier final stage（20）Complementation is provided
Control signal.
6. according to the emission amplifier described in any one in claim 1-5, it is characterised in that
The amplifier final stage（20）It is made up of Part I and Part II, wherein, the Part I and described second
Divide the door component with identical door type.
7. emission amplifier according to claim 6, it is characterised in that
The Part I and the Part II have the door component of equal number of identical door type.
8. according to the emission amplifier described in any one in claim 1-7, it is characterised in that
The pre-amplifier stage（10）With the output end for manipulating the amplifier final stage.
9. according to the emission amplifier described in any one in claim 1-8, it is characterised in that
The amplifier final stage（20）It is made up of Part I and Part II, wherein, the Part I and described second
Divide the door component with different door types.
10. emission amplifier according to claim 9, it is characterised in that
The Part I and the Part II have the door component of equal number of different door types.
11. according to the emission amplifier described in any one in claim 1-10, it is characterised in that
The door component is two-door component（22）.
12. according to the emission amplifier described in any one in claim 1-11, it is characterised in that
Pre-amplifier stage for balance has multiple components（11）.
13. according to the emission amplifier described in any one in claim 1-12, it is characterised in that
The pre-amplifier stage has at least one anti-phase door component（11）With a noninverting door component（11）.
14. the emission amplifier according to claim 12 or 13, it is characterised in that
The pre-amplifier stage has the circuitous for being used for that run time compensation to be carried out to the door component.
15. for the system to battery pack charging, the system has：
Wireless transmitting system, the wireless transmitting system have the transmitting amplification according to any one in claim 1-14
Device（100）,
Wherein, the emission amplifier（100）It is used for the peripheral applications when being charged to battery pack.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015205714.3 | 2015-03-30 | ||
| DE102015205714.3A DE102015205714A1 (en) | 2015-03-30 | 2015-03-30 | A transmission amplifier for amplifying a signal in a wireless transmission system |
| PCT/EP2016/055573 WO2016156032A1 (en) | 2015-03-30 | 2016-03-15 | Transmission amplifier for amplifying a signal in a wire-free transmission system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107431464A true CN107431464A (en) | 2017-12-01 |
| CN107431464B CN107431464B (en) | 2021-11-19 |
Family
ID=55542654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680019890.8A Active CN107431464B (en) | 2015-03-30 | 2016-03-15 | Transmit amplifier for amplifying a signal in a wireless transmission system |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10439568B2 (en) |
| EP (1) | EP3251210A1 (en) |
| CN (1) | CN107431464B (en) |
| DE (1) | DE102015205714A1 (en) |
| WO (1) | WO2016156032A1 (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4186437A (en) * | 1978-05-03 | 1980-01-29 | California Institute Of Technology | Push-pull switching power amplifier |
| US6265935B1 (en) * | 1998-02-19 | 2001-07-24 | Ntt Mobile Communications Network Inc. | Amplifier for radio transmission |
| CN1618167A (en) * | 2001-11-23 | 2005-05-18 | 皇家飞利浦电子股份有限公司 | Switched mode power amplifier |
| CN1992520A (en) * | 2005-10-17 | 2007-07-04 | 哈曼国际工业有限公司 | Precision triangular wave generator |
| CN201230300Y (en) * | 2008-06-27 | 2009-04-29 | 武汉正维电子技术有限公司 | Last stage four path amplifier for CDMA base station system power amplifier |
| CN102150340A (en) * | 2008-09-17 | 2011-08-10 | 高通股份有限公司 | Transmitters for wireless power transmission |
| CN103259496A (en) * | 2012-02-15 | 2013-08-21 | 伍锦程 | Closed-loop negative-feedback modulation and demodulation switch power amplifier |
| CN103918177A (en) * | 2011-07-18 | 2014-07-09 | 凯瑟雷恩工厂两合公司 | Amplifier arrangement |
| CN103916092A (en) * | 2012-12-28 | 2014-07-09 | Lsi公司 | Hybrid Digital/Analog Power Amplifier |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK0563421T3 (en) | 1992-03-31 | 1997-12-29 | Siemens Audiologische Technik | Hearing-circuit device |
| US5612647A (en) * | 1995-06-30 | 1997-03-18 | Harris Corporation | RF power amplifier system having an improved drive system |
| US6211735B1 (en) * | 2000-01-21 | 2001-04-03 | Harris Corporation | RF power amplifier having improved power supply for RF drive circuits |
| US6924681B2 (en) * | 2001-05-23 | 2005-08-02 | Texas Instruments Incorporated | Efficient pulse amplitude modulation transmit modulation |
| US20030134606A1 (en) * | 2002-01-15 | 2003-07-17 | Stolarczyk Larry G. | Class-L radio power-output amplifier |
| US7119621B2 (en) * | 2003-08-07 | 2006-10-10 | Ntt Docomo, Inc. | Power amplifier |
| US7679396B1 (en) | 2004-07-07 | 2010-03-16 | Kao Richard F C | High speed integrated circuit |
| JP2006033499A (en) * | 2004-07-16 | 2006-02-02 | Sony Corp | Class d amplifier |
| EP2100372A2 (en) | 2006-10-30 | 2009-09-16 | Nortel Networks Limited | High efficiency digital power amplifier |
| US7719141B2 (en) | 2006-11-16 | 2010-05-18 | Star Rf, Inc. | Electronic switch network |
| FR2914516B1 (en) * | 2007-03-27 | 2009-06-12 | Commissariat Energie Atomique | AMPLIFIER ELECTRONIC CIRCUIT COMPRISING A DIFFERENTIAL PAIR AND A COUNTER-REACTION SYSTEM |
| US7560989B2 (en) * | 2007-05-08 | 2009-07-14 | Em Microelectronic-Marin S.A. | Power amplifier with controlled output power |
| EP2266203B1 (en) | 2008-04-18 | 2012-05-23 | STMicroelectronics SA | Integrated circuit and corresponding method of processing a multitype radio frequency digital signal |
| US20090284369A1 (en) * | 2008-05-13 | 2009-11-19 | Qualcomm Incorporated | Transmit power control for a wireless charging system |
| US8772975B2 (en) | 2009-12-07 | 2014-07-08 | Qualcomm Incorporated | Apparatus and method for implementing a differential drive amplifier and a coil arrangement |
| US8547177B1 (en) * | 2010-05-12 | 2013-10-01 | University Of Washington Through Its Center For Commercialization | All-digital switched-capacitor radio frequency power amplification |
| US8441320B2 (en) * | 2010-12-13 | 2013-05-14 | Marvell World Trade Ltd. | Cancelation of gain change due to amplifier self-heating |
| FR2970611B1 (en) | 2011-01-14 | 2013-08-30 | St Microelectronics Sa | OUTPUT STAGE FORMED IN AND ON A SOI-TYPE SUBSTRATE |
| JP2013030973A (en) * | 2011-07-28 | 2013-02-07 | Nippon Soken Inc | Power supply device, contactless power transmission apparatus, vehicle, and contactless power transmission system |
| US8736368B2 (en) * | 2011-08-16 | 2014-05-27 | Qualcomm Incorporated | Class E amplifier overload detection and prevention |
| DE102011115721B4 (en) | 2011-10-12 | 2022-02-03 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | System for wireless energy transfer |
| US8760225B1 (en) | 2013-01-08 | 2014-06-24 | Lsi Corporation | BiCMOS gate driver for class-S radio frequency power amplifier |
-
2015
- 2015-03-30 DE DE102015205714.3A patent/DE102015205714A1/en not_active Withdrawn
-
2016
- 2016-03-15 EP EP16710429.8A patent/EP3251210A1/en not_active Withdrawn
- 2016-03-15 CN CN201680019890.8A patent/CN107431464B/en active Active
- 2016-03-15 US US15/562,982 patent/US10439568B2/en active Active
- 2016-03-15 WO PCT/EP2016/055573 patent/WO2016156032A1/en active Application Filing
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4186437A (en) * | 1978-05-03 | 1980-01-29 | California Institute Of Technology | Push-pull switching power amplifier |
| US6265935B1 (en) * | 1998-02-19 | 2001-07-24 | Ntt Mobile Communications Network Inc. | Amplifier for radio transmission |
| CN1618167A (en) * | 2001-11-23 | 2005-05-18 | 皇家飞利浦电子股份有限公司 | Switched mode power amplifier |
| CN1992520A (en) * | 2005-10-17 | 2007-07-04 | 哈曼国际工业有限公司 | Precision triangular wave generator |
| CN201230300Y (en) * | 2008-06-27 | 2009-04-29 | 武汉正维电子技术有限公司 | Last stage four path amplifier for CDMA base station system power amplifier |
| CN102150340A (en) * | 2008-09-17 | 2011-08-10 | 高通股份有限公司 | Transmitters for wireless power transmission |
| CN103918177A (en) * | 2011-07-18 | 2014-07-09 | 凯瑟雷恩工厂两合公司 | Amplifier arrangement |
| CN103259496A (en) * | 2012-02-15 | 2013-08-21 | 伍锦程 | Closed-loop negative-feedback modulation and demodulation switch power amplifier |
| CN103916092A (en) * | 2012-12-28 | 2014-07-09 | Lsi公司 | Hybrid Digital/Analog Power Amplifier |
Non-Patent Citations (3)
| Title |
|---|
| FREDERICK H. RAAB: "Class-D power amplifier with RF pulse-width modulation", 《2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM》 * |
| 舒国皓: "互补对称式D类放大器", 《电声技术》 * |
| 龚伟: "单周控制开关功率放大器的研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20180367108A1 (en) | 2018-12-20 |
| CN107431464B (en) | 2021-11-19 |
| EP3251210A1 (en) | 2017-12-06 |
| US10439568B2 (en) | 2019-10-08 |
| DE102015205714A1 (en) | 2016-10-06 |
| WO2016156032A1 (en) | 2016-10-06 |
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