CN107425409A - Mode-locked laser and optical system - Google Patents

Mode-locked laser and optical system Download PDF

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Publication number
CN107425409A
CN107425409A CN201710505438.9A CN201710505438A CN107425409A CN 107425409 A CN107425409 A CN 107425409A CN 201710505438 A CN201710505438 A CN 201710505438A CN 107425409 A CN107425409 A CN 107425409A
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China
Prior art keywords
mode
locked laser
reflection part
locked
division multiplexing
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Granted
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CN201710505438.9A
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Chinese (zh)
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CN107425409B (en
Inventor
黎玥
王琳
杨先衡
史仪
张昊宇
李超
罗韵
向小雨
梁小宝
赵磊
王建军
游云峰
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Laser Fusion Research Center China Academy of Engineering Physics
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Laser Fusion Research Center China Academy of Engineering Physics
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B7/00—Mountings, adjusting means, or light-tight connections, for optical elements
    • G02B7/02—Mountings, adjusting means, or light-tight connections, for optical elements for lenses
    • G02B7/023—Mountings, adjusting means, or light-tight connections, for optical elements for lenses permitting adjustment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06708—Constructional details of the fibre, e.g. compositions, cross-section, shape or tapering
    • H01S3/06712—Polarising fibre; Polariser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08059—Constructional details of the reflector, e.g. shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1106—Mode locking
    • H01S3/1112—Passive mode locking
    • H01S3/1115—Passive mode locking using intracavity saturable absorbers
    • H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based

Abstract

The invention provides a kind of mode-locked laser and optical system, it is related to laser technology field.The mode-locked laser includes pump light source, light wavelength division multiplexing and Mode-locked laser resonator, and the Mode-locked laser resonator includes the first reflection part, gain media and for locked mode and for growing the second reflection part being adjusted to the chamber of the Mode-locked laser resonator.By the pump light of pump light source output after light wavelength division multiplexing enters Mode-locked laser resonator, transmitted through the first reflection part to gain media and produce flashlight；Flashlight is transmitted to the first reflection part by gain media again through second reflection part reflection；Incide and meet that the part of the first reflection part Transmission Conditions exports through the light wavelength division multiplexing in the pulse laser of first reflection part.Mode-locked laser provided in an embodiment of the present invention can carry out accurate adjustment to the chamber length of Mode-locked laser resonator, its structure miniaturization, can be effectively improved the repetition rate error for exporting pulse.

Description

Mode-locked laser and optical system
Technical field
The present invention relates to laser technology field, in particular to a kind of mode-locked laser and optical system.
Background technology
Existing traditional mode locked fiber laser relies on the state after itself locked mode to meet application demand substantially, the mark that can reach It is limited, it is difficult to meet its application demand；In frequency stabilization system making, due to the requirement for frequency stability, existing skill Art scheme generally use optical frequency com builds frequency stabilization system to realize the repetition rate of high stable as seed source, can reach Extremely low frequency jitter magnitude.
However, optical frequency com typically uses space feedback structure, although time jitter is relatively low, it is difficult to long-time stable Work, and due to its complicated feedback control system, system is huge, expensive, it is difficult to meet high-volume, miniaturization, lead to With the application demand of change.
The content of the invention
It is an object of the invention to provide a kind of mode-locked laser and optical system, and it can be by adjusting Mode-locked laser resonator Chamber grow and obtain required repetition rate, and simple in construction, the stability of a system is high, effectively improves of the prior art ask Topic.
What embodiments of the invention were realized in：
On the one hand, the embodiments of the invention provide a kind of mode-locked laser, it include pump light source, light wavelength division multiplexing and Mode-locked laser resonator, the Mode-locked laser resonator include the first reflection part, gain media and for locked mode and for the locks The second reflection part that the chamber length of mode resonant cavity is adjusted, it is multiple through the light wave point by the pump light that the pump light source exports After entering the Mode-locked laser resonator with device, transmitted through first reflection part to the gain media and produce flashlight；It is described Flashlight incides second reflection part, is transmitted again by the gain media to institute through second reflection part reflection State the first reflection part；Incide and meet the first reflection part Transmission Conditions in the pulse laser of first reflection part Fractional transmission and through the light wavelength division multiplexing export.
In preferred embodiments of the present invention, second reflection part is Frequency Adjustable semiconductor saturable absorbing mirror, institute Stating Frequency Adjustable semiconductor saturable absorbing mirror includes semiconductor saturable absorbing mirror and for that can satisfy to the Frequency Adjustable semiconductor The apparatus for adjusting position being adjusted with the length of absorbing mirror, the flashlight exported by the gain media enter the Frequency Adjustable After semiconductor saturable absorbing mirror, the pulse laser formed through the semiconductor saturable absorber mirror mode-locking is exported to the gain Medium.
In preferred embodiments of the present invention, the Frequency Adjustable semiconductor saturable absorbing mirror also includes the first lens and the Two lens, the pulse laser formed through the semiconductor saturable absorber mirror mode-locking is successively by first lens and described the Two lens are exported to the gain media.
In preferred embodiments of the present invention, the apparatus for adjusting position includes piezoelectric ceramics and translation stage, described partly to lead Body saturable absorbing mirror and first lens are respectively arranged on the translation stage, and the piezoelectric ceramics and the translation stage can The position of the semiconductor saturable absorbing mirror and first lens is entered according to the chamber independently inputted long Regulate signal Row fine setting.
In preferred embodiments of the present invention, the mode-locked laser also includes optoisolator, beam splitter and feedback electricity Road, the optoisolator and the light wavelength division multiplexing coupling, the beam splitter respectively with the optoisolator, the feedback Circuit couples, second reflection part coupling in the feedback circuit and the Mode-locked laser resonator, by the locked mode resonance Chamber is divided into two paths of signals through the optoisolator through the pulse laser that the light wavelength division multiplexing exports by the beam splitter, its In all the way signal output, another way signal be converted to feedback adjustment signal into the feedback circuit, and by the feedback circuit Output is to second reflection part, so that the chamber of Mode-locked laser resonator length to be adjusted.
In preferred embodiments of the present invention, the feedback circuit includes photodetector and electronic frequency stabilization feedback device, The beam splitter and photodetector coupling, the photodetector and the electronic frequency stabilization feedback device coupling, institute Electronic frequency stabilization feedback device and second reflection part coupling are stated, described in the entrance of signal all the way exported as the beam splitter Photodetector is converted to electric signal, then modulates by the electronic frequency stabilization feedback device and to form feedback adjustment signal and export to institute The second reflection part is stated, so that the chamber of Mode-locked laser resonator length to be adjusted.
In preferred embodiments of the present invention, first reflection part is grating.
In preferred embodiments of the present invention, the gain media is polarization-maintaining gain fibre.
In preferred embodiments of the present invention, the pump light source includes laser diode and pumping protection wave filter, institute State laser diode and pumping protection wave filter coupling, the pumping protection wave filter and the light wavelength division multiplexing coupling Close, the pump light exported by the laser diode enters through the pumping protection wave filter and the light wavelength division multiplexing successively First reflection part.
On the other hand, the embodiment of the present invention additionally provides a kind of optical system, it include oscillating detector and as described above Mode-locked laser, the oscillating detector passes through the light wavelength division multiplexing in the mode-locked laser and Mode-locked laser resonator coupling Close, be converted to and shaken into the oscillating detector through the light wavelength division multiplexing by the pulse laser that the Mode-locked laser resonator exports Detection signal output is swung, to detect the repetition rate of the Mode-locked laser resonator.
Mode-locked laser provided in an embodiment of the present invention and optical system, by setting the first reflection part and the second reflection Part carries out vibration amplification to pump light, produces flashlight by gain media absorptive pumping light, passes through second reflecting part Part carries out locked mode to flashlight and exports pulse laser.Compared with the laser of existing lock chamber length, the embodiment of the present invention carries The mode-locked laser of confession can carry out accurate adjustment by second reflection part to the chamber length of Mode-locked laser resonator, can effectively repair Positive laser repetition rate error due to vibration, temperature drift and caused by being difficult to accurate cutting optical fibre；With optical frequency com phase Than it disclosure satisfy that the operation steady in a long-term of laser and low frequency jitter, and simple in construction, and the stability of a system is high, can Realize miniaturization and repetition rate stablizes adjustable mode-locked laser.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below by embodiment it is required use it is attached Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can also be according to this A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 is the structural representation for the mode-locked laser that first embodiment of the invention provides；
Fig. 2 is the structural representation for the Frequency Adjustable semiconductor saturable absorbing mirror that first embodiment of the invention provides；
Fig. 3 is the structural representation for the optical system that first embodiment of the invention provides；
Fig. 4 is the structural representation for the mode-locked laser that second embodiment of the invention provides.
Icon：100- pump light sources；120- laser diodes；140- pumping protection wave filters；200- Mode-locked laser resonators； The reflection parts of 210- first；220- gain medias；230- optical filters；The reflection parts of 240- second；241- semiconductor saturables Absorbing mirror；The lens of 242- first；243- piezoelectric ceramics；The lens of 244- second；245- translation stages；300- light wavelength division multiplexings； 400- optoisolators；500- oscillating detectors；600- beam splitters；700- photodetectors；The electronic frequency stabilization feedback devices of 800-； 1000- mode-locked lasers；2000- optical systems.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is Part of the embodiment of the present invention, rather than whole embodiments.The present invention implementation being generally described and illustrated herein in the accompanying drawings The component of example can be configured to arrange and design with a variety of.
Therefore, below the detailed description of the embodiments of the invention to providing in the accompanying drawings be not intended to limit it is claimed The scope of the present invention, but be merely representative of the present invention selected embodiment.It is common based on the embodiment in the present invention, this area The every other embodiment that technical staff is obtained under the premise of creative work is not made, belong to the model that the present invention protects Enclose.
It should be noted that：Similar label and letter represents similar terms in following accompanying drawing, therefore, once a certain Xiang Yi It is defined, then it further need not be defined and explained in subsequent accompanying drawing in individual accompanying drawing.
In the description of the invention, it is necessary to explanation, term " in ", " on ", " under ", "left", "right", " vertical ", " water It is flat ", " interior ", the orientation of the instruction such as " outer " or position relationship for based on orientation shown in the drawings or position relationship, or the hair Bright product using when the orientation usually put or position relationship, be for only for ease of the description present invention and simplify description, rather than Indicate or imply that signified device or element there must be specific orientation, with specific azimuth configuration and operation, therefore can not It is interpreted as limitation of the present invention.In addition, term " first ", " second ", " the 3rd " etc. are only used for distinguishing description, without being understood that To indicate or implying relative importance.
In addition, the term such as term " level ", " vertical ", " pendency " is not offered as requiring part abswolute level or pendency, and It is to be slightly tilted.Such as " level " only refers to that its direction is more horizontal with respect to for " vertical ", is not to represent the structure Must be fully horizontal, but can be slightly tilted.
In the description of the invention, it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ", " installation ", " connected ", " connection " should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or one Connect body；Can be mechanical connection or electrical connection；Can be joined directly together, can also be indirect by intermediary It is connected, can is the connection of two element internals.For the ordinary skill in the art, on being understood with concrete condition State the concrete meaning of term in the present invention.
Term for describing light beam advance process, such as " injection ", " process ", " passing through ", " transmission " etc. are not offered as It is required that light beam completely penetrates through or beam splitting, but a kind of optical change or optical treatment are described.As " passing through " only refers to light beam By there occurs change optically, being processed light beam after the optical element required for the technical problem that achieves a solution Light beam, according to the difference of optical element in specific embodiment, it may be possible to which reflection is also likely to be transmission.In addition, " transmission " refers to Light beam incides a certain material interface and occurs to reflect and penetrate the phenomenon of the interface, relative with " reflection ".
In addition, the term such as " input ", " output ", " feedback ", " formation " is understood as describing a kind of optics, electricity change Or optics, electricity processing.As " is formationed " only refer to optical signal or electric signal by the element, instrument or device afterwards there occurs Change optically or electrically so that the optical signal or the electric signal are processed, and then are obtained and implemented technical scheme Or the signal required for solution technical problem.
In the specific embodiment accompanying drawing of the present invention, for more preferable, clearer description mode-locked laser and optical system In each element operation principle, annexation of the performance wherein between each several part, simply substantially distinguished the phase between each element To position relationship, can not form to the optical path direction in element or structure, the order of connection and Each part size, size, The restriction of shape.
First embodiment
Fig. 1 is refer to, present embodiments provides a kind of mode-locked laser 1000, it includes pump light source 100, locked mode resonance Chamber 200, light wavelength division multiplexing 300 and optoisolator 400.The Mode-locked laser resonator 200 is again including the first reflection part 210, increasing Beneficial medium 220, optical filter 230 and for locked mode and for the chamber of the Mode-locked laser resonator 200 length to be adjusted Two reflection parts 240.
The pump light source 100 can be that the LASER Light Source of excitation is provided for mode-locked laser 1000.In the present embodiment, institute Stating pump light source 100 includes laser diode 120 and pumping protection wave filter 140, the laser diode 120 and the pumping Protecting filter 140 couples, and the pumping protection wave filter 140 and first reflection part 210 are multiple by the light wave point Coupled with device 300.In the present embodiment, the centre wavelength for the pump light that used laser diode 120 exports is 976nm.
First reflection part 210 has the characteristic of part reflecting part transmission so that passes through first reflecting part The pump light and flashlight of part 210 have the transmission of part and partial reflection.In the present embodiment, first reflection part 210 can be selected the grating that transmissivity is 20%, reflectivity is 80%.
The gain media 220 can be absorbed into pump light therein, and inspire the letter different with pumping light frequency Number light.In the present embodiment, gain media 220 can be polarization-maintaining gain fibre.For example, pump light corresponding to 976nm and 1064nm signal light output, the polarization-maintaining gain fibre can be Yb dosed optical fibers；Pump light corresponding to 976nm and 1550nm signal light output, the polarization-maintaining gain fibre can be Er-doped fibers.
It refer to Fig. 2, in the present embodiment, second reflection part 240 is Frequency Adjustable semiconductor saturable absorbing mirror, institute Stating Frequency Adjustable semiconductor saturable absorbing mirror includes the first lens 242, the second lens 244, the and of semiconductor saturable absorbing mirror 241 For the apparatus for adjusting position that the length of the Frequency Adjustable semiconductor saturable absorbing mirror is adjusted.
In the present embodiment, the apparatus for adjusting position includes piezoelectric ceramics 243 and translation stage 245, and the semiconductor can satisfy It is respectively arranged at absorbing mirror 241 and first lens 242 on the translation stage 245, the piezoelectric ceramics 243 and described flat Moving stage 245 can be according to the long Regulate signal of the chamber independently inputted to the semiconductor saturable absorbing mirror 241 and described first The position of lens 242 is finely adjusted.
In the present embodiment, the work of piezoelectric ceramics 243 and translation stage 245 is separate.The He of piezoelectric ceramics 243 The translation stage 245 can be connected to an external cord respectively to input different voltage, for the piezoelectricity pottery to be separately controlled The position of porcelain 243 and the translation stage 245.In specific implementation, piezoelectric ceramics 243 and translation stage 245 can be respectively by external The outside adjustment module of electric wire connection, piezoelectric ceramics 243 can be adjusted respectively by adjusting the knob in two outside adjustment modules Or the position of translation stage 245.It is understood that the change of the position of the piezoelectric ceramics 243 and the translation stage 245, all It can make the position of the semiconductor saturable absorbing mirror 241 and first lens 242 that corresponding change occur, and then make described The light path that light passes through in Frequency Adjustable semiconductor saturable absorbing mirror changes, and finally realizes the chamber length of the Mode-locked laser resonator 200 Change is the change of mode locking pulse repetition rate.
In the present embodiment, translation stage 245 can realize the position adjustments of nano-precision.Particularly, translation stage 245 is additionally provided with Coarse adjustment knob.Comparatively, because the adjustable extent of translation stage 245 is big, the adjustable extent of piezoelectric ceramics 243 is small but precision It is higher, in the present embodiment, it can select when repetition error is larger quickly to change by the way of manual coarse adjustment using translation stage 245 The long error of kind chamber, is fine-tuned using piezoelectric ceramics 243 when error is smaller.
In the present embodiment, the structure of the semiconductor saturable absorbing mirror 241 is by speculum and the suction of semiconductor saturable Acceptor is combined together, and can make to incide flashlight therein between mirrors by some cycles resonance, its caused arteries and veins Intensity peak of leaping high part strengthens from the semiconductor saturable absorber, and low intensive preceding trailing edge portion is then effectively pressed down System absorbs, you can the extremely narrow ultra-short pulse laser signal of output pulse width, realizes locked mode.
In the present embodiment, the effect of the lens 244 of the first lens 242 and second is to realize the convergence and diverging of light, And control piezoelectric ceramics 243 or translation stage 245 to move, it can accordingly change the semiconductor saturable absorbing mirror 241 and described The position of first lens 242.
In Mode-locked laser resonator 200, light the first reflection part 210 arrive semiconductor saturable absorbing mirror 241 between back and forth Vibration, it is to be understood that the chamber length of the Mode-locked laser resonator 200, as described first reflection part 210 arrive the semiconductor The distance between farthest speculum of first reflection part 210 described in distance in saturable absorbing mirror 241.In the first reflection part In the case that 210 position is constant, the position of semiconductor saturable absorbing mirror 241 is adjusted, you can realize to Mode-locked laser resonator 200 Chamber length regulation.
The course of work for the mode-locked laser 1000 that the present embodiment provides is substantially：Exported by the pump light source 100 Pump light is after the light wavelength division multiplexing 300 is coupled into the Mode-locked laser resonator 200, through first reflection part 210 Transmit to the gain media 220 and produce flashlight；The flashlight enters the optical filter 230, remaining pump light quilt Filter out, remaining flashlight is incided in second reflection part 240, successively by the second lens 244, the first lens 242 enter semiconductor saturable absorbing mirror 241；The ultra-short pulse laser exported by the semiconductor saturable absorbing mirror 241 is again Pass through first lens 242, second lens 244, the optical filter 230 and gain media 220 successively, wherein about 20% pulse laser transmits from the first reflection part 210, and remaining about 80% pulse laser continues in the locked mode resonance Vibration amplification in chamber 200；Coupled from the pulse laser of first reflection part 210 transmission through the light wavelength division multiplexing 300 To the optoisolator 400, the part pump light through first reflection part 210 reflection and possible return are isolated out Light, exported by the laser pulse of the optoisolator 400 from the mode-locked laser 1000.
Fig. 3 is refer to, the present embodiment additionally provides a kind of optical system 2000, and it includes oscillating detector 500 and as above Described mode-locked laser 1000.The oscillating detector 500 passes through the light wavelength division multiplexing in the mode-locked laser 1000 300 and optoisolator 400 coupled with Mode-locked laser resonator 200.
The pulse laser exported by the Mode-locked laser resonator 200 is successively by the light wavelength division multiplexing 300 and optically isolated Device 400, opto-electronic conversion occurs into the oscillating detector 500 is interior, is converted to signal detecting oscillation output.
In the present embodiment, the signal detecting oscillation of output can be connected to display device such as oscillograph, to detect institute in real time State the repetition rate of Mode-locked laser resonator 200.If detect the repetition rate and required repetition frequency of the pulse laser of output Rate error is larger, now can directly coarse adjustment translation stage 245 or (and) regulation piezoelectric ceramics 243 come to Mode-locked laser resonator 200 Chamber length carry out on-line control, until the pulse signal frequency of output with required repetition rate error in tolerance interval, Complete the chamber length regulation of Mode-locked laser resonator 200.
The mode-locked laser 1000 that the present embodiment provides, it can be made pottery respectively by the piezoelectricity set in the second reflection part 240 The chamber length of Mode-locked laser resonator 200 is adjusted for porcelain 243 and translation stage 245, can effectively correct laser due to vibration, temperature Repetition rate error caused by drifting about and being difficult to accurate fiber cut, its is simple in construction, and the stability of a system is high, miniaturization and Repetition rate stablize it is adjustable, can export needed for repetition rate pulse laser.
Second embodiment
Fig. 4 is refer to, present embodiments provides a kind of mode-locked laser 1000, and first embodiment of the invention maximum is not Same to be, the mode-locked laser 1000 also includes beam splitter 600 and feedback circuit.The beam splitter 600 passes through light wave Division multiplexer 300 and optoisolator 400 couple with first reflection part 210 in the Mode-locked laser resonator 200.
In the present embodiment, the feedback circuit includes photodetector 700 and electronic frequency stabilization feedback device 800 again, described Beam splitter 600 and the photodetector 700 couple, the photodetector 700 and the electronic frequency stabilization feedback device 800 Couple, the piezoelectric ceramics 243 in the electronic frequency stabilization feedback device 800 and second reflection part 240 couples.
In the present embodiment, pulse that the electronic frequency stabilization feedback device 800 will can transmit from photodetector 700 Signal frequency is made comparisons with reference frequency, described electronic when the frequency of oscillation of actual pulse signal deviates the reference frequency Frequency stabilization feedback device 800 can be modulated according to the reference frequency to the pulse signal received, by electronic frequency stabilization feedback device The feedback adjustment signal exported after 800 modulation can apply corresponding amendment voltage to the piezoelectric ceramics 243, corresponding to change half The position of the lens 242 of conductor saturable absorbing mirror 241 and first, and then the chamber length of Mode-locked laser resonator 200 is adjusted, until actual defeated The frequency of the pulsed laser signal gone out and the difference of reference frequency are in tolerance interval, so as to correct output pulse automatically The deviation of laser repetition rate.
The present embodiment provide mode-locked laser 1000 at work, the pulse signal exported by the optoisolator 400 Divide through the beam splitter 600 for two paths of signals, wherein signal can be exported directly all the way, another way signal is visited into the photoelectricity Survey device 700 and be converted to pulse laser electric signal, then feedback adjustment signal is formed by the electronic modulation of frequency stabilization feedback device 800 Output is automatic to be carried out to the chamber of the Mode-locked laser resonator 200 length to the piezoelectric ceramics 243 in second reflection part 240 Regulation.
The mode-locked laser 1000 that the present embodiment provides, can pass through default reference in electronic frequency stabilization feedback device 800 Frequency is corrected automatically to the repetition rate of the pulse laser of reality output, realizes low jitter frequency, can self-starting, small-sized light Quantify and can the non-maintaining laser of longtime running.
In summary, mode-locked laser provided in an embodiment of the present invention and optical system, by setting the first reflection part Vibration amplification is carried out to pump light with the second reflection part, flashlight is produced by gain media absorptive pumping light, by described Second reflection part carries out locked mode to flashlight and exports pulse laser.Compared with the laser of existing lock chamber length, this hair The mode-locked laser that bright embodiment provides can carry out accurate adjustment by second reflection part to the chamber length of Mode-locked laser resonator, Laser can effectively be corrected due to vibration, temperature drift and repetition rate error caused by being difficult to accurate cutting optical fibre；With light Learn frequency comb to compare, it disclosure satisfy that the operation steady in a long-term of laser and low frequency jitter, and simple in construction, and system is stable Property it is high, miniaturization can be realized and repetition rate stablizes adjustable mode-locked laser.It the foregoing is only the excellent of the present invention Embodiment is selected, is not intended to limit the invention, for those skilled in the art, the present invention there can be various changes And change.Within the spirit and principles of the invention, any modification, equivalent substitution and improvements made etc., it should be included in this Within the protection domain of invention.

Claims (10)

  1. A kind of 1. mode-locked laser, it is characterised in that including pump light source, light wavelength division multiplexing and Mode-locked laser resonator, the lock Mode resonant cavity includes the first reflection part, gain media and carried out for locked mode and for being grown to the chamber of the Mode-locked laser resonator Second reflection part of regulation,
    By the pump light that the pump light source exports after the light wavelength division multiplexing enters the Mode-locked laser resonator, through described the One reflection part transmits to the gain media and produces flashlight；
    The flashlight incides second reflection part, passes through the gain media again through second reflection part reflection Transmit to first reflection part；
    Incide the fractional transmission for meeting the first reflection part Transmission Conditions in the pulse laser of first reflection part And exported through the light wavelength division multiplexing.
  2. 2. mode-locked laser according to claim 1, it is characterised in that second reflection part is Frequency Adjustable semiconductor Saturable absorbing mirror, the Frequency Adjustable semiconductor saturable absorbing mirror include semiconductor saturable absorbing mirror and for it is described can The apparatus for adjusting position that the length of frequency modulation semiconductor saturable absorbing mirror is adjusted,
    After the flashlight exported by the gain media enters the Frequency Adjustable semiconductor saturable absorbing mirror, through the semiconductor The pulse laser that saturable absorbing mirror locked mode is formed is exported to the gain media.
  3. 3. mode-locked laser according to claim 2, it is characterised in that the Frequency Adjustable semiconductor saturable absorbing mirror is also Including the first lens and the second lens,
    The pulse laser formed through the semiconductor saturable absorber mirror mode-locking passes through first lens and described second successively Lens are exported to the gain media.
  4. 4. mode-locked laser according to claim 3, it is characterised in that the apparatus for adjusting position include piezoelectric ceramics and Translation stage, the semiconductor saturable absorbing mirror and first lens are respectively arranged on the translation stage, the piezoelectricity pottery Porcelain and the translation stage can be according to the long Regulate signals of the chamber independently inputted to the semiconductor saturable absorbing mirror and described The position of first lens is finely adjusted.
  5. 5. mode-locked laser according to claim 1, it is characterised in that the mode-locked laser also include optoisolator, Beam splitter and feedback circuit, the optoisolator and the light wavelength division multiplexing coupling, the beam splitter respectively with it is described Optoisolator, the feedback circuit couple, the second reflection part coupling in the feedback circuit and the Mode-locked laser resonator Close,
    Divided by the Mode-locked laser resonator through the pulse laser that the light wavelength division multiplexing exports through the optoisolator by the light Beam device is divided into two paths of signals, wherein signal output all the way, another way signal is converted to feedback regulation letter into the feedback circuit Number, and exported by the feedback circuit to second reflection part, so that the chamber of Mode-locked laser resonator length to be adjusted.
  6. 6. mode-locked laser according to claim 5, it is characterised in that the feedback circuit includes photodetector and electricity Dynamic frequency stabilization feedback device, the beam splitter and photodetector coupling, the photodetector and the electronic frequency stabilization Feedback device couples, the electronic frequency stabilization feedback device and second reflection part coupling,
    The signal all the way exported by the beam splitter is converted to electric signal into the photodetector, then by described electronic Frequency stabilization feedback device, which is modulated, to be formed feedback adjustment signal and exports to second reflection part, with the chamber to the Mode-locked laser resonator Length is adjusted.
  7. 7. mode-locked laser according to claim 1, it is characterised in that first reflection part is grating.
  8. 8. mode-locked laser according to claim 1, it is characterised in that the gain media is polarization-maintaining gain fibre.
  9. 9. mode-locked laser according to claim 1, it is characterised in that the pump light source includes laser diode and pump Pu protecting filter, the laser diode and pumping protection wave filter coupling, the pumping protection wave filter and described Light wavelength division multiplexing couples,
    The pump light exported by the laser diode enters through the pumping protection wave filter and the light wavelength division multiplexing successively Enter first reflection part.
  10. 10. a kind of optical system, it is characterised in that swash including the locked mode described in oscillating detector and any one of claim 1 to 9 Light device, the oscillating detector are coupled by the light wavelength division multiplexing in the mode-locked laser and Mode-locked laser resonator,
    Be converted to by the pulse laser that the Mode-locked laser resonator exports through the light wavelength division multiplexing into the oscillating detector Signal detecting oscillation exports, to detect the repetition rate of the Mode-locked laser resonator.
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CN108565671A (en) * 2018-03-26 2018-09-21 中国工程物理研究院激光聚变研究中心 A kind of mode locked fiber laser
CN109616859A (en) * 2019-01-29 2019-04-12 中山铟尼镭斯科技有限公司 A kind of optical fiber femtosecond laser
CN112186492A (en) * 2019-07-03 2021-01-05 苏州曼德特光电技术有限公司 Laser and adjusting method of output pulse repetition frequency thereof

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CN105428976A (en) * 2016-01-11 2016-03-23 中国工程物理研究院激光聚变研究中心 Mode-locked fiber laser and pulse laser generation method
CN105490160A (en) * 2016-02-06 2016-04-13 上海理工大学 All-optical laser device for locking repetition frequency and method for applying device
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CN108565671A (en) * 2018-03-26 2018-09-21 中国工程物理研究院激光聚变研究中心 A kind of mode locked fiber laser
CN109616859A (en) * 2019-01-29 2019-04-12 中山铟尼镭斯科技有限公司 A kind of optical fiber femtosecond laser
CN112186492A (en) * 2019-07-03 2021-01-05 苏州曼德特光电技术有限公司 Laser and adjusting method of output pulse repetition frequency thereof

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