CN107424944B - Epitaxial layer stripping device and stripping method - Google Patents
Epitaxial layer stripping device and stripping method Download PDFInfo
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- CN107424944B CN107424944B CN201710509575.XA CN201710509575A CN107424944B CN 107424944 B CN107424944 B CN 107424944B CN 201710509575 A CN201710509575 A CN 201710509575A CN 107424944 B CN107424944 B CN 107424944B
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 14
- 238000003825 pressing Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 3
- 239000000806 elastomer Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 abstract description 26
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 239000006227 byproduct Substances 0.000 abstract description 4
- 238000005260 corrosion Methods 0.000 abstract description 4
- 230000007797 corrosion Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 95
- 239000010408 film Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000002033 PVDF binder Substances 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses an epitaxial layer stripping device and a stripping method, which are used for stripping an epitaxial layer of a to-be-stripped piece sequentially comprising a substrate, a sacrificial layer, an epitaxial layer and a supporting layer, wherein the epitaxial layer stripping device comprises a box body with an opening at the upper end, and an elastic buffer structure is arranged at the bottom of the box body; when the piece to be peeled is placed above the elastic buffer structure, the edge of the supporting layer of the piece to be peeled is positioned on the side wall of the box body, so that a certain opening angle is formed between the supporting layer of the piece to be peeled and the substrate. At the initial stage of etching, the elastic buffer structure is compressed and slowly moves downwards, under the combined action of the stress of the supporting layer and the supporting force of the epitaxial layer stripping device on the piece to be stripped, the flare angle of the epitaxial layer and the substrate is gradually increased, a corrosion channel formed between a corrosion liquid and a sacrificial layer interface is increased, the corrosion liquid can rapidly enter and the output of reaction byproducts is facilitated, and the epitaxial layer stripping rate at the initial stage of etching is increased.
Description
Technical Field
The invention belongs to the manufacture of semiconductor devices and electronic devices, and particularly relates to a novel epitaxial layer stripping device and a novel epitaxial layer stripping method.
Background
At present, in the manufacturing process of semiconductor thin film devices, especially photovoltaic devices, LEDs, and semiconductor lasers, in order to separate functional materials from a wafer substrate and to recycle the stripped substrate, an epitaxial layer stripping (ELO) process is often used, and the semiconductor thin film obtained by stripping is called an ELO film. In the traditional epitaxial layer stripping process, a sacrificial layer is epitaxially grown on a substrate material, then a photoelectric conversion layer or a functional layer is epitaxially grown, and then the sacrificial layer is removed in an etching mode, so that the epitaxial layer is separated from a growth substrate, and a complete semiconductor film is obtained.
In the ELO process, the sacrificial layer is usually very thin (5 nm-100 nm), and is usually removed by a chemical wet etching method, the sacrificial layer and the etching solution undergo a chemical reaction to form an etching channel at the sacrificial layer interface, and the epitaxial layer and the substrate are gradually separated to obtain the ELO film. The traditional epitaxial layer stripping process mostly depends on the self-stress of a support layer or an external force applied to a piece to be stripped so as to realize the separation of the epitaxial layer and the substrate, wherein the support layer can be one or more metal materials, and can also be one polymer or a combination of a plurality of polymers. At the initial stage of epitaxial layer peeling, if the stress of the supporting layer is too large, an ELO film can be cracked or even broken, so that the stress of the supporting layer is smaller, and the speed of driving the epitaxial layer to curl is slow. In addition, no matter depending on the stress of the supporting layer or external force, the problem that the flare angle between the supporting layer and the substrate is too small exists in the initial stripping stage, so that corrosive liquid is difficult to enter, reaction byproducts are output too slowly, and the stripping time is long, so that the stripping rate in the initial etching stage is slow, and the efficiency of the stripping process is influenced.
Therefore, an epitaxial layer stripping method with simple and feasible operation is needed to increase the epitaxial layer stripping rate in the early stage of etching.
Disclosure of Invention
The invention aims to provide an epitaxial layer stripping device and a stripping method capable of accelerating the stripping rate at the initial etching stage, aiming at the problem that the epitaxial layer stripping process is slow due to the low etching rate at the initial etching stage of the existing epitaxial layer stripping process.
In order to achieve the purpose, the invention provides an epitaxial layer stripping device which is used for stripping an epitaxial layer of a to-be-stripped piece sequentially comprising a substrate, a sacrificial layer, an epitaxial layer and a supporting layer, and comprises a box body with an opening at the upper end, wherein an elastic buffer structure is arranged at the bottom of the box body; when the piece to be peeled is placed above the elastic buffer structure, the edge of the supporting layer of the piece to be peeled is positioned on the side wall of the box body.
Further, the top of the side wall of the epitaxial lift off device box body is provided with an inward inclined supporting surface along the thickness of the box body.
Furthermore, the elastic buffer structure of the epitaxial layer stripping device is an elastic buffer block integrated with or separated from the box body.
Furthermore, the elastic buffer structure comprises an elastic buffer block and a light supporting block horizontally arranged above the elastic buffer block; the limiting groove is formed in the inner wall of the box body, and the light supporting block can move up and down in the box body along the limiting groove.
Further, the epitaxial layer stripping device also comprises a pressing block which can be placed above the supporting layer of the piece to be stripped.
Furthermore, the side wall and/or the bottom wall of the box body of the epitaxial layer stripping device is/are provided with holes for corrosive liquid to enter.
Furthermore, the limiting groove of the epitaxial layer stripping device is positioned in the middle of the box body.
Further, the elastic buffer block is a porous structure elastomer made of a fluorine-containing material.
Further, an epitaxial layer peeling method includes:
(1) placing the piece to be stripped above the elastic buffer structure at the bottom of the box body, and enabling the edge of the supporting layer of the piece to be stripped to be positioned on the side wall of the box body;
(2) and immersing the epitaxial layer stripping device and the piece to be stripped into the corrosive liquid together, and corroding the sacrificial layer of the piece to be stripped, so that the epitaxial layer of the piece to be stripped is separated from the substrate.
Further, the epitaxial layer stripping method further comprises the following steps: and placing a pressing block above the supporting layer of the piece to be stripped.
Compared with the prior art, the epitaxial layer stripping device and the method have the following beneficial effects that:
1. according to the epitaxial layer stripping device, due to the existence of the box body and the elastic buffer structure, the self stress of the supporting layer of the piece to be stripped is combined, and in the initial stage of etching, along with the downward movement of the elastic buffer structure, the opening angle between the epitaxial layer and the substrate is increased, so that the speed of the movement of corrosive liquid to the etching front end interface and the removal of byproducts from the etching front end interface is accelerated, and the epitaxial layer stripping speed in the initial stage of etching is effectively improved.
2. The epitaxial layer stripping method is simple to operate, only the piece to be stripped is placed above the elastic buffer structure, the edge of the supporting layer is ensured to be positioned at the top of the side wall of the box body, certain stress is maintained, in the initial stage of etching, the substrate of the piece to be stripped moves downwards along with the elastic buffer structure, and the opening angle between the supporting layer and the substrate is gradually increased due to the stress of the supporting layer and the box body, so that the entering of corrosive liquid is accelerated, and the stripping rate of the epitaxial layer in the initial stage of etching is improved.
Drawings
Fig. 1 is a top view of an epitaxial layer stripping apparatus;
FIG. 2 is a sectional view A-A of FIG. 1;
fig. 3 is a perspective sectional view of the epitaxial layer peeling apparatus;
in the figure, 1-epitaxial layer stripping device, 2-box body, 3-to-be-stripped part, 301-substrate, 302-sacrificial layer, 303-epitaxial layer, 304-supporting layer, 4-elastic buffer structure, 401-elastic buffer block, 402-light supporting block, 5-limiting groove and 6-pressing block.
Detailed Description
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be understood that the preferred embodiments are only for illustrating the present invention, and are not intended to limit the scope of the present invention.
Example 1
Referring to fig. 2, the member to be stripped 3 in this embodiment mainly includes a substrate 301, a sacrificial layer 302, an epitaxial layer 303, and a support layer 304, and an edge of the support layer 304 extends out of a portion of the substrate 301 so as to be placed above a sidewall of the box 2.
Referring to fig. 1 and 3, the epitaxial layer stripping device 1 comprises a box body 2 with an upper end opened, an elastic buffer structure 4 is arranged at the bottom of the box body, and when a piece 3 to be stripped is placed above the elastic buffer structure 4, the edge of a supporting layer 304 of the piece 3 to be stripped is positioned on the side wall of the box body 2.
Preferably, in this embodiment, the top of the sidewall of the box body 2 of the epitaxial lift off device 1 has an inward inclined surface along the thickness thereof for better supporting the support layer 304 of the member 3 to be lifted off. In other embodiments of the present invention, the top of the sidewall of the case 2 may be flat or have other shapes, so long as it can support the supporting layer 304 of the peeling member 3.
Preferably, in this embodiment, the elastic buffer structure 4 in the epitaxial layer stripping device 1 includes an elastic buffer block 401 and a light-weight support block 402, the epitaxial layer stripping device 1 further includes a limit groove 5 into which the edge of the light-weight support block 402 can be inserted, the light-weight support block 402 is horizontally placed above the elastic buffer block 401, and the edge of the light-weight support block 402 is inserted into the limit groove 5 and is kept horizontal, so as to ensure that the to-be-stripped part 3 is stably placed, and the light-weight support block 402 can move up and down along the limit groove 5. In other embodiments of the present invention, the elastic buffer structure 4 of the epitaxial layer stripping apparatus 1 may also be an elastic buffer block 401 integrated with or separated from the box body 2.
Preferably, in this embodiment, the epi layer stripping apparatus 1 further includes a pressing block 6, the pressing block 6 is located above the support layer 304 of the piece 3 to be stripped, and the density of the pressing block 6 is greater than that of the etching solution, so as to prevent the ELO film from drifting after the stripping is completed. In other embodiments of the invention, the weight of the pressing block 6 may be adjusted according to the kind and process of the member to be peeled 3.
Preferably, in this embodiment, each constituent surface of the box body 2 of the epitaxial layer stripping device 1 includes a side wall and a bottom wall, and is provided with a hole for allowing the corrosive liquid to enter, so that the corrosive liquid can enter the epitaxial layer stripping device 1 from each part of the box body 2 at the same time, and the whole process running time is shortened. In other embodiments of the invention, the components of the housing 2 may be partially or non-porous.
In this embodiment, the limiting groove 5 of the epitaxial layer stripping apparatus 1 is located in the middle of the four inner walls of the box body, and is obtained by vertically extending downwards to a predetermined depth along the opening in the middle of the top of the inner wall of the box body 2, and the depth of the limiting groove 5 is greater than the thickness of the light-weight supporting block 402, so as to limit the light-weight supporting block 402 to move up and down in the limiting groove 5. The inner wall of the box body 2 is distinguished from the side wall of the box body 2, and the inner wall of the box body 2 is equivalent to the inner side surface of the side wall of the box body 2. Therefore, in other embodiments of the present invention, the limiting groove 5 may extend downward to a certain depth along the side wall thickness opening of the box body 2, and may be an inner groove without limitation to the number and position.
In this embodiment, the elastic buffer block 401 of the epitaxial layer peeling apparatus is a porous structure elastomer containing a fluorine material, such as a fluorine-containing material like polyvinylidene fluoride (PVDF). In other embodiments of the present invention, the elastic buffer block 401 may also be a foam, a metal spring, other porous polymer, or other elastic material that does not react with the corrosive liquid.
In this embodiment, the lightweight support block 402 comprises a corrosion resistant material and has a density less than that of the corrosive liquid.
Example 2
The present embodiment relates to an epitaxial layer stripping method, as shown in fig. 2 and fig. 3, which is applicable to the epitaxial layer stripping apparatus in the foregoing embodiments, and the specific method includes:
(1) placing the piece 3 to be stripped above the elastic buffer structure 4 at the bottom of the box body 2, and inserting the light-weight supporting block 402 into the limiting groove 5 to ensure that the light-weight supporting block 402 is horizontally placed; placing the piece 3 to be peeled above the light-weight supporting block 402, enabling the supporting layer 304 of the piece 3 to be peeled to be positioned above the side wall of the box body 2, keeping the edge of the supporting layer 301 warped and maintaining a certain stress;
(2) the pressing block 6 is placed above the supporting layer 304 of the piece 3 to be stripped, and the whole device 1 to be stripped and the piece 3 to be stripped are immersed in the etching solution containing hydrofluoric acid for etching.
Specifically, before the etching process is performed, the to-be-stripped part 3, the light-weight support block 402, the pressing block 6 and the elastic buffer block 401 are all in a balanced state, and at this time, the top of the side wall of the box body 2 of the epitaxial layer stripping device 1 is in contact with the edge of the support layer 304, and has a certain supporting force on the whole to-be-stripped part 3. In the initial stage of etching, due to the existence of the stress of the support layer 304 which is curled upwards, the support force of the epitaxial layer stripping device 1 on the to-be-stripped part 3 is gradually reduced, the whole to-be-stripped part 3 is slowly moved downwards along with the compression of the elastic buffer block 401, and due to the existence of the support effect of the box body 2 on the support layer 304, the substrate 301 is gradually moved downwards along with the compression of the elastic buffer block 401 at a speed higher than the downwards movement speed of the epitaxial layer 303 connected with the support layer 304, so that the opening angle between the epitaxial layer 303 and the substrate 301 is gradually increased, an etching channel formed between the etching liquid and the interface of the sacrificial layer 302 is enlarged, the etching liquid is favorably and quickly enters a reaction interface and the output of reaction byproducts, and the stripping rate of the epitaxial layer 303 in the initial stage of etching is improved; with the continuous entering of the etching solution, the epitaxial layer 303 is completely stripped.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are intended to be within the scope of the invention.
Claims (9)
1. An epitaxial layer stripping device is used for stripping an epitaxial layer of a piece to be stripped, which sequentially comprises a substrate, a sacrificial layer, an epitaxial layer and a supporting layer, and is characterized by comprising a box body with an opening at the upper end, wherein an elastic buffer structure is arranged at the bottom of the box body; when the piece to be stripped is placed above the elastic buffer structure, the edge of the supporting layer of the piece to be stripped is positioned on the side wall of the box body;
the elastic buffer structure comprises an elastic buffer block and a light supporting block horizontally arranged above the elastic buffer block; the light supporting block can move up and down in the box body along the limiting groove.
2. The epi-layer stripping apparatus of claim 1, wherein a top of the box body sidewall has an inwardly inclined support surface along a thickness thereof.
3. The epi-layer take-off device of claim 1, wherein the elastic buffer structure is an elastic buffer block integrated with or separated from the case.
4. The epi-layer peeling apparatus of claim 1, further comprising a pressure block positionable over the support layer of the piece to be peeled.
5. The epitaxial lift off device of claim 1, wherein the side wall and/or the bottom wall of the box body is provided with holes for the etchant to enter.
6. The epitaxial layer stripping device of claim 1, wherein the limiting groove is located at a middle position inside the box body.
7. The epitaxial layer stripping apparatus as claimed in claim 1 or 3, wherein the elastic buffer block is a porous structure elastomer of a fluorine-containing material.
8. An epitaxial layer peeling method of an epitaxial layer peeling apparatus according to any one of claims 1 to 7, comprising:
(1) placing the piece to be stripped above the elastic buffer structure at the bottom of the box body, so that the edge of the supporting layer of the piece to be stripped is positioned on the side wall of the box body;
(2) and immersing the epitaxial layer stripping device and the piece to be stripped in a corrosive liquid together, and corroding the sacrificial layer of the piece to be stripped, so that the epitaxial layer of the piece to be stripped is separated from the substrate.
9. The epitaxial lift-off method of claim 8, further comprising:
and placing a pressing block above the supporting layer of the piece to be stripped.
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| CN201710509575.XA CN107424944B (en) | 2017-06-28 | 2017-06-28 | Epitaxial layer stripping device and stripping method |
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| CN201710509575.XA CN107424944B (en) | 2017-06-28 | 2017-06-28 | Epitaxial layer stripping device and stripping method |
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| CN107424944B true CN107424944B (en) | 2022-09-06 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006279031A (en) * | 2005-03-01 | 2006-10-12 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| CN103545239A (en) * | 2013-09-17 | 2014-01-29 | 新磊半导体科技（苏州）有限公司 | Epitaxial wafer stripping process based on films |
| CN104247068A (en) * | 2012-04-23 | 2014-12-24 | 南洋理工大学 | Apparatus and method for separating a stacked arrangement |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10259206B2 (en) * | 2010-03-02 | 2019-04-16 | Alta Devices, Inc. | Epitaxial lift off systems and methods |
| AU2013271798A1 (en) * | 2012-06-04 | 2014-12-18 | The Regents Of The University Of Michigan | Strain control for acceleration of epitaxial lift-off |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006279031A (en) * | 2005-03-01 | 2006-10-12 | Semiconductor Energy Lab Co Ltd | Method of manufacturing semiconductor device |
| CN104247068A (en) * | 2012-04-23 | 2014-12-24 | 南洋理工大学 | Apparatus and method for separating a stacked arrangement |
| CN103545239A (en) * | 2013-09-17 | 2014-01-29 | 新磊半导体科技（苏州）有限公司 | Epitaxial wafer stripping process based on films |
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