CN107419329B - The preparation method of the full carbon structure of single-crystal diamond surface in situ n-type semiconductorization - Google Patents
The preparation method of the full carbon structure of single-crystal diamond surface in situ n-type semiconductorization Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
- C30B25/205—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer the substrate being of insulating material
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
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Abstract
A kind of preparation method of the full carbon structure of single-crystal diamond surface in situ n-type semiconductorization, belongs to semiconductor foundation circuit basis material preparation field.Processing step are as follows: single-crystal diamond is polished to surface roughness lower than 1nm using mechanical polishing by a.；B. pickling and use H2Plasma etches in situ, and seed crystal face is made to form microcosmic nucleation point；C. single crystal diamond substrate is placed in molybdenum support microflute, sample surfaces to groove height and sample and microflute gap ratio are maintained between 0.5-0.7；D. using single-crystal diamond as seed crystal, inhibit space propagation and the diffusion into the surface of carbon-containing group by control depositing operation, in single-crystal diamond surface sp3Inhibit abstraction reaction under structure, rely on the step and defect area of single-crystal diamond, realizes super Nano diamond forming core and growth；Nitrating realizes the n-type doping of super Nano diamond simultaneously, and the preparation of the super Nano diamond thin layer of surface in situ N-shaped conduction is finally realized in the case where having not been changed single crystal diamond seed crystal initial condition, forms a kind of diamond semiconductor of full carbon structure.
Description
Technical field:
The present invention relates to semiconductor foundation circuit basis material preparation fields；Especially utilized on single-crystal diamond surface
Plasma etching and vapor deposition form the super Nano diamond thin layer of N-shaped in diamond surface direct in-situ semiconductor transformation, obtain
A kind of diamond semiconductor of full carbon structure.
Technical background
Diamond have broader band gap (5.5eV), high carrier mobility (especially hole mobility than single crystalline Si,
GaAs is much higher), low-k (5.7), high Johnson index and Keyse index (be above Si and GaAs ten again with
On) etc., it is known as the ultimate wide bandgap semiconductor in high-frequency high-power and high-temperature pressure-proof field, also referred to as forth generation is partly led
Body.And because of the splendid stability that it has semiconductor devices is worked normally in extreme circumstances.However, Buddha's warrior attendant
Carbon atom radius and lattice constant are smaller in stone, and forbidden bandwidth is big, therefore solubility is very low in a diamond for many foreign atoms,
And the ionization energy of impurity higher constrains the development of diamond semiconductor.The p-type impurity energy level mixed in diamond film is deep, causes
Carrier concentration is low, and mobility is small, and resistivity is high, and ion doping still faces problems at present.Preparation about N-shaped diamond
The method that method mostly uses CVD method and ion implanting, correlative study achieves certain progress, but effect is still undesirable, and destroys
Diamond crystal perfection itself.The mode that scholars start to explore and have studied the super Nano diamond of N doping thus is realized
N-shaped conduction (Phys.Rev.B.74,235434 (2006) and its conductive mechanism (Phys.Rev.B.70,125412 (2004)).By
Then there are a large amount of crystal boundaries in super Nano diamond, and nitrogen causes seepage flow approach in grain boundary area and improves N-shaped conduction,
Conductivity absolute value is improved as the increase of nitrogen content improves carrier mobility and broadening energy band.Neda etc. is mixed with nitrogen
Miscellaneous super Nano diamond realizes N-shaped conduction and is prepared for piezoresistance sensor (DiamondRelat.Mater.70,145150
(2016)；Ultraviolet detector has been made using the super Nano diamond of N doping N-shaped in Abdelrahman etc.
(Appl.Phys.A.123,167(2017)).It can be seen that the super Nano diamond of N doping N-shaped becomes diamond n-type semiconductor
Effective ways, and its performance has had reached the level of boron-doped diamond.But the current super Nano diamond of N doping N-shaped
Film preparation is all made of hetero-substrates, such as Si, often due to the low thermal conductivity of substrate and low resistance to pressure, so that diamond is excellent
Good electric property is difficult to play, and limits the abundant application of super Nano diamond excellent properties.At the same time, in foreign substrate
Upper growth Nano diamond even super Nano diamond generally requires to improve nucleation rate using the side such as mechanical lapping or bias
Method so that growth technique is complicated, and easily causes stress and the deformation of substrate.
Summary of the invention
To solve the above problems, being substrate forming core it is an object of the invention to propose a kind of based on high thermal conductivity single-crystal diamond
Super nanometer N-shaped diamond is grown, to form a kind of full diamond carbon structure semiconductor for having both good heat conductive and conductive characteristic.
It after single-crystal diamond polishing is reached extremely low roughness using mechanical polishing, is placed it in molybdenum support microflute, is guaranteed by pickling
Sample and slot keep certain geometry relationship, using H2Etching makes seed crystal face form microcosmic nucleation point to plasma in situ.With
Afterwards by control depositing operation, the step after single-crystal diamond etches is relied in the case where not changing diamond seed initial condition and is lacked
Area is fallen into, nitrating realizes n-type doping growth while realizing super Nano diamond forming core, meets the super nanometer of surface in situ N-shaped conduction
The preparation of thin layer of diamond forms a kind of diamond semiconductor of full carbon structure.
The technical solution of the present invention is as follows:
A kind of preparation method of single-crystal diamond surface in situ n-type semiconductor.It is characterized in that passing through microwave plasma
Body etching and gas phase deposition technology on single-crystal diamond surface directly generate the super Nano diamond thin layer of N-shaped conduction, processing step
It is as follows:
(1) grinding and polishing of single crystal diamond seed crystal
Meet electronic device requirement to guarantee to grow super Nano diamond rear surface, first to single crystal diamond film surface
It carries out precise polished.The diadust for being 40,20,10 and 2.5 with granularity carries out pre-polish(ing)；It is placed on precision diamond
Finishing polish is carried out on polishing disk, realizes that surface roughness is lower than 1nm after polishing.
(2) single crystal diamond seed crystal pickling processes
To guarantee single-crystal diamond any surface finish, metal inclusion that may be present, hydrocarbon, graphite etc. are removed.It throws
Seed crystal sample is placed in HCl:H after light2SO4Mixed liquor in boil after rinsed with deionized water；Be sequentially placed into again acetone soln and
It is cleaned by ultrasonic drying in dehydrated alcohol.
(3) foundation of single-crystal diamond depositional environment
Single crystal diamond substrate is placed in the rectangular microflute of molybdenum support, sample surfaces to rooved face height and sample survey edge and
Microflute spacing ratio is maintained between 0.5-0.7, molybdenum support thickness in 5-15mm, depth of mini longitudinal channels 500 microns -1500 microns it
Between.And molybdenum support is placed on the thermally conductive base station of copper and guarantees heat loss.It is heavy that this method is able to maintain a suitable diamond substrate
Long-pending part and Near-neighbor Environment.If temperature and chamber pressure influence each other and are unable to reach because diamond single crystal is in argon-arc plasma field
Suitable condition, and surface deposits the appearance and seed crystal face side in the plasma that super Nano diamond process is easy crystallite
Edge temperature is excessively high and makes seed crystal face temperature distributing disproportionation and influences the flatness of sedimentary, to avoid fast-growth from occurring
Nanocluster, so that diamond surface sedimentary reaches planarizing.Moreover, crystallite dimension depends on chemical reaction mean free path
Degree and boundary layer thickness, designed groove depth can be improved the steady flow layer thickness of diamond surface, and crystallite dimension is with boundary layer thickness
The increase of degree and reduce, be conducive to the second nucleation of crystal grain；It can guarantee active group concentration simultaneously, guarantee super nanocrystalline fast
Fast forming core growth.At the same time, molybdenum support thickness is controlled, its surface is made to be in plasma ball edge, is reducing flow field to Buddha's warrior attendant
The concentration for guaranteeing group needed for growing while stone surface erosion stablizes the forming core growth of super Nano diamond.
(4) the plasma surface etching of single crystal diamond seed crystal
Using H2 plasma etching so that removal diamond surface it is that may be present distortion area or end of dislocation it is same
When produce the step and defect area of single-crystal diamond.The process starts and adjusts technological parameter in plasma and reaches stable shape
It is in situ during state to complete, specifically: hydrogen 200-300sccm, methane flow 5-25sccm.Due to being passed through methane meeting
It elevates the temperature about 30-50 DEG C, therefore is being passed through H2Afterwards, power 2000-3000W, the voltage-controlled temperature processed of adjusting cavity is at 700-740 DEG C
Left and right etches 10-15 minutes.So that being produced while removing diamond surface distortion area that may be present or end of dislocation
The step and defect area of single-crystal diamond.In practical etching process, hydrogen plasma is to surface distortion and dislocation expansion area
Etch rate is much larger than intact region.It is produced while removing diamond surface distortion area that may be present or end of dislocation
The step and defect area of single-crystal diamond realize the direct forming core of Nano diamond and growth dependent on this.Meanwhile to single crystal diamond
The H2 plasma in situ etching of carpolite crystalline substance makes its surface form a large amount of H terminations, and the atom H on dangling bonds will constantly be removed simultaneously
It is substituted by the constituent element containing C, ideal interface needed for keeping diamond growth, facilitates super nanocrystalline forming core growth.Suspension
Key is the carbon source C substitution that methane provides, and by controlling methane flow, regulation power chamber pressure guarantees temperature and realizes.
(5) deposition growing of the super nanometer layer in surface
Diamond state is not changed after etching, only by control power, temperature, chamber pressure and gas flow in quick forming core
The super Nano diamond of n-type doping is formed in growth course.By carbon-containing group concentration in control plasma, inhibit containing carbon-based
The space propagation of group and diffusion into the surface, in single-crystal diamond surface sp3Inhibit abstraction reaction under structure, relies on single-crystal diamond
Step and defect area realize the direct forming core of Nano diamond and growth, methane flow 5-25sccm, so that realizing high CH4It is logical
Amount, in preference temperature and relatively low pressure, forms CH in environment3And CH2Matrix and dimer C2It is all a nanometer Buddha's warrior attendant
Substance needed for the growth of stone forming core.The addition of nitrogen can also accelerate growth rate.By controlling nitrating ratio, in Nano diamond
Forming core simultaneously, realizes that the nitrogen-atoms of C-C lattice is incorporated to.Compared to CH4/H2Plasma, additional N2It provides many additional anti-
It answers path and includes the new intermediate reaction object of N and lead to different N2Product can be caused to be formed nanocrystalline.
Further, the pre-polish(ing) time described in step (1) is 24-48 hours.
Further, step (1) the finishing polish step is: on precision diamond polishing disk, control revolving speed be 40 turns/
Minute, carry out respectively 20-30 hour in the case of 80 revs/min, 120 revs/min, 40-60 hours with thrown within 80-100 hours
Light processing.
Further step (2) described pickling processes are that seed crystal sample is placed in HCl:H after polishing2SO4The mixing of=1:5
Boiled in liquid 45 minutes to 1 hour, after rinsed with deionized water；It is clear that it is sequentially placed into each ultrasound in acetone soln and dehydrated alcohol again
It washes 10-15 minutes, dries up.
Further, the concrete technology condition of step (5) the super Nano diamond for forming n-type doping is: power
800w-3000w, 400-750 DEG C of temperature, chamber pressure is maintained in the case of 5~15.5kPa, in the hydrogen that flow is 100-500sccm
With the N for being passed through 1-60sccm flow in the methane of 5-25sccm2。
The key of implementation process of the present invention is:
(1) in single crystal diamond seed crystal surface treatment process, with the polishing of the bortz powder of different-grain diameter and appropriateness
Time is precise polished to the progress of seeded growth face, reaches extremely bright and clean, eliminates graphite-phase, and abnormal grain growth or formation is avoided to receive
Rice cluster.
(2) during realizing surface polishing, except using mechanical polishing method, also use chemical mechanical polishing, etc.
The means such as gas ions auxiliary or composite polishing carry out accurate planarizing process to diamond substrate surface, to reach rough surface
Degree is less than 1nm.
(3) foundation of single-crystal diamond depositional environment is the geometry of the size design deposition table based on diamond single crystal seed crystal
Structure, sample surfaces to rooved face height and sample survey edge and microflute spacing ratio is maintained between 0.5-0.7, control molybdenum support
Thickness makes its surface be in plasma ball edge.Establish and stablize the control environment that the forming core of super Nano diamond is grown.
(4) the pure H of single crystal diamond seed crystal2Plasma surface etching.So that may be present in removal diamond surface
The step and defect area of single-crystal diamond are generated while distortion area or end of dislocation.It is formed simultaneously a large amount of hydrogen termination.It keeps
Ideal interface needed for diamond growth facilitates super nanocrystalline forming core growth.
(5) in pure H2Pass through carbon-containing group concentration in control plasma, methane flow 8-15sccm, so that real in environment
Existing high CH4Flux forms CH in preference temperature and relatively low pressure in environment3And C2H matrix and dimer C2All
It is substance needed for super Nano diamond forming core growth.
(6) in setting power 800-3000W, 400-750 DEG C of temperature, chamber pressure is maintained at 5~15.5kPa.What is be added is highly concentrated
Spend the N of nitrogen source 1-60sccm2It can speed up the growth of diamond, to guarantee the quick forming core growth of super Nano diamond.Simultaneously
To guarantee to realize N doping while single-crystal diamond surface forms super Nano diamond, the super nanometer of N-shaped conduction is formed
Diamond layer.
(7) other than N doping, different gas sources is may be incorporated into and realize that S, P adulterate to form the doping such as N-shaped conduction or B
Form p-type electric-conducting.
(8) diamond substrate seed crystal can use high temperature and pressure seed crystal or homoepitaxy single-crystal diamond.It equally can also be with
Using polycrystalline diamond and the composite construction of silicon, GaN, SiC etc. and diamond.
Compared to the prior art possessed beneficial effect is the present invention:
(1) single-crystal diamond has the highest thermal conductivity of nature, forms N-shaped by high thermal conductivity single-crystal diamond surface and leads
Susceptance rice/super Nano diamond is forming good N-shaped conduction meanwhile, it is capable to realize the high efficiency and heat radiation of device.
(2) deposit super Nano diamond on single-crystal diamond surface, and its bright and clean surface without grinding, add nanometer
The forming cores preprocessing means such as bortz powder, biasing can quick shape using the step and defect of single-crystal diamond after etching itself
At Nano diamond crystal grain and crystal boundary, realizes forming core, greatly reduce the complexity of preparation flow.
(3) present invention realizes that single-crystal diamond surface deposits super Nano diamond, avoids interface mismatch between dissimilar substances
And the problem of influencing performance.The mutually destruction of diamond caused by being also avoided simultaneously due to ion implanting and CVD growth doping
The foreign atom of sum is difficult to ionization and is easy to graphited problem under high temperature environment.The full diamond lattic structure has more excellent
Thermal stability.
(4) diamond single crystal surface forms nano-diamond composite, becomes full diamond lattic structure, or full carbon knot
Structure, in addition to good thermal conductivity and electric conductivity, due to the chemical inertness of diamond carbon material, which will also have
With a series of excellent characteristics such as good acid-alkali-corrosive-resisting, radiation hardness, can be mentioned for the exploitation of adverse circumstances electronic device
For substrate, the application field of the diamond electronic device has further been widened.
Detailed description of the invention
Fig. 1 is the sample front and back sides Raman of deposition high nitrogenous super Nano diamond thin layer in single-crystal diamond surface of the present invention
(Raman) spectrogram.
Fig. 2 is scanning (SEM) photo of deposition high nitrogenous super Nano diamond thin layer in single-crystal diamond surface of the present invention
Specific embodiment
Specific embodiment one
(1) high temperature and pressure single crystal diamond seed crystal surface is away from the ratio between cell wall spacing L away from molybdenum bracket height H and seed crystal
0.57, molybdenum support thickness 5mm, 700 μm of depth of mini longitudinal channels；(2) N is pressed2: (H2+CH4The flow-rate ratio of)=1:312: N2For 1sccm, H2For
12sccm、CH4It is 10.6~10.65kPa in chamber pressure for 300sccm, slow power per liter is simultaneously maintained at 1600-1650W；(3) seed crystal
Surface temperature at 640 DEG C~645 DEG C, sedimentation time 1 hour, after be slowly cooled to room temperature.It is attached that gained sedimentary draws spectrogram to see
Figure, main Raman shift peak are located at: 1140,1332,1340,1470 and 1580cm-1Place.Wherein, 1332cm-1What place occurred
It is the characteristic peak of diamond, the halfwidth at the peak is very big, is that typical super Nano diamond carrys out Raman map.Surface topography map is such as
Shown in figure two.
Specific embodiment two
(1) high temperature and pressure single crystal diamond seed crystal surface is away from the ratio between cell wall spacing L away from molybdenum bracket height H and seed crystal
0.62, molybdenum support thickness 8mm, 800 μm of depth of mini longitudinal channels；(2) N is pressed2: (H2+CH4The flow-rate ratio of)=30:312: N2For 30sccm, H2
For 12sccm, CH4It is 12.7~12.75kPa in chamber pressure for 300sccm, slow power per liter is simultaneously maintained at 1800-1850W；(3) seed
Brilliant surface temperature at 680 DEG C~685 DEG C, sedimentation time 1 hour, after be slowly cooled to room temperature.Gained sedimentary draw spectrogram with
Embodiment one is identical.
Specific embodiment three
(1) high temperature and pressure single crystal diamond seed crystal surface is away from the ratio between cell wall spacing L away from molybdenum bracket height H and seed crystal
0.63, molybdenum support thickness 10mm, 900 μm of depth of mini longitudinal channels；(2) N is pressed2: (H2+CH4The flow-rate ratio of)=30:312: N2For 30sccm,
H2For 12sccm, CH4It is 14.1~14.5kPa in chamber pressure for 300sccm, delay power per liter and be maintained at 2350-2400W or so；
(3) seed crystal face temperature is at 745 DEG C~755 DEG C, sedimentation time 1 hour, after be slowly cooled to room temperature.Gained sedimentary draws spectrum
Scheme identical as embodiment one.
Specific embodiment four
(1) high temperature and pressure single crystal diamond seed crystal surface is away from the ratio between cell wall spacing L away from molybdenum bracket height H and seed crystal
0.60, molybdenum support thickness 15mm, 1500 μm of depth of mini longitudinal channels；(2) N is pressed2: (H2+CH4The flow-rate ratio of)=60:312: N2For
60sccm、H2For 12sccm, CH4It is 14.5~15kPa in chamber pressure for 300sccm, slow power per liter is simultaneously maintained at 2350-2400W
Left and right；(3) seed crystal face temperature is at 745 DEG C~755 DEG C, sedimentation time 1 hour, after be slowly cooled to room temperature.Gained sedimentary
Draw spectrogram identical as embodiment one.
Claims (4)
1. a kind of preparation method of single-crystal diamond surface in situ n-type semiconductor, it is characterised in that pass through microwave plasma
Etching and gas phase deposition technology on single-crystal diamond surface directly generate the super Nano diamond thin layer of N-shaped conduction, and processing step is
It is as follows:
(1) grinding and polishing of single crystal diamond seed crystal
The diadust for being 40,20,10 and 2.5 with granularity carries out pre-polish(ing)；It is enterprising to be placed on precision diamond polishing disk
Row finishing polish realizes that surface roughness is lower than 1nm after polishing；
(2) single crystal diamond seed crystal pickling processes
(3) foundation of single-crystal diamond depositional environment
Single crystal diamond substrate is placed in the rectangular microflute of molybdenum support, sample surfaces to rooved face height and sample side edge and microflute
Spacing ratio is maintained between 0.5-0.7, and molybdenum support thickness is in 5-15mm, and depth of mini longitudinal channels is between 500 microns -1500 microns；And
Molybdenum support is placed on the thermally conductive base station of copper and guarantees heat loss；
(4) the plasma surface etching of single crystal diamond seed crystal
Using H2Plasma etching, so that being produced while removing diamond surface distortion area that may be present or end of dislocation
The step and defect area of single-crystal diamond are given birth to；
(5) deposition growing of the super nanometer layer in surface
Do not change diamond state after etching, is only grown by control power, temperature, chamber pressure and gas flow in quick forming core
The super Nano diamond of n-type doping is formed in the process；
The pre-polish(ing) time described in step (1) is 24-48 hours；
Step (1) the finishing polish step is: on precision diamond polishing disk, control revolving speed is 40 revs/min, 80 revs/min
Clock is carried out 20-30 hours respectively in the case of 120 revs/min, 40-60 hours and is processed by shot blasting for 80-100 hours.
2. a kind of preparation method of single-crystal diamond surface in situ n-type semiconductor as described in claim 1, it is characterised in that step
Suddenly (2) described pickling processes are that seed crystal sample is placed in HCl:H after polishing2SO4It is boiled in the mixed liquor of=1:5 45 minutes small to 1
When, after rinsed with deionized water；It is sequentially placed into acetone soln and dehydrated alcohol and is respectively cleaned by ultrasonic 10-15 minutes again, dry up.
3. a kind of preparation method of single-crystal diamond surface in situ n-type semiconductor as described in claim 1, it is characterised in that step
Suddenly (4) are described uses H2Plasma etch process is: hydrogen 200-300sccm is being passed through H2Afterwards, power is set
2000-3000W, the voltage-controlled temperature processed of adjusting cavity etch 10-15 minutes at 700-740 DEG C or so.
4. a kind of preparation method of single-crystal diamond surface in situ n-type semiconductor as described in claim 1, it is characterised in that step
Suddenly the concrete technology condition of (5) described super Nano diamond for forming n-type doping is: power 800w-3000w, temperature 400-750
DEG C, chamber pressure is maintained in the case of 5~15.5kPa, is passed through in the methane of hydrogen and 5-25sccm that flow is 100-500sccm
The N of 1-60sccm flow2。
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| CN106012003A (en) * | 2016-06-07 | 2016-10-12 | 武汉工程大学 | Two-dimensional expansion method for CVD monocrystal diamond |
| CN106048719A (en) * | 2016-07-08 | 2016-10-26 | 武汉大学 | Substrate holder and method for growing monocrystalline diamond |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104878447A (en) * | 2015-06-04 | 2015-09-02 | 哈尔滨工业大学 | Seed crystal-substrate in-situ connection method for homoepitaxial-growth monocrystalline diamond |
| CN105331948A (en) * | 2015-09-25 | 2016-02-17 | 北京科技大学 | Manufacturing method for surface type-P conductive diamond heat sink material |
| CN106012003A (en) * | 2016-06-07 | 2016-10-12 | 武汉工程大学 | Two-dimensional expansion method for CVD monocrystal diamond |
| CN106048719A (en) * | 2016-07-08 | 2016-10-26 | 武汉大学 | Substrate holder and method for growing monocrystalline diamond |
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