CN107406465A - Aluminium compound and using its formed method containing aluminium film - Google Patents

Aluminium compound and using its formed method containing aluminium film Download PDF

Info

Publication number
CN107406465A
CN107406465A CN201680010611.1A CN201680010611A CN107406465A CN 107406465 A CN107406465 A CN 107406465A CN 201680010611 A CN201680010611 A CN 201680010611A CN 107406465 A CN107406465 A CN 107406465A
Authority
CN
China
Prior art keywords
aluminium
tert
dimethyl
butyl group
triisopropylaluminiuand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680010611.1A
Other languages
Chinese (zh)
Inventor
韩元锡
高元勇
李洪周
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UP Chemical Co Ltd
Original Assignee
UP Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UP Chemical Co Ltd filed Critical UP Chemical Co Ltd
Publication of CN107406465A publication Critical patent/CN107406465A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic System
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers

Abstract

The present invention relates to one kind by R3The aluminium compound of AlL expressions including the composition containing aluminium film of the aluminium compound and the forming method containing aluminium film that make use of the aluminium compound, wherein, each R separately includes straight or branched C3‑8Alkyl；L includes material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine, and provides and a kind of easily carry out keeping and the aluminium compound transported and the composition of formation containing aluminium film by increasing heat endurance.

Description

Aluminium compound and using its formed method containing aluminium film
Technical field
The method containing aluminium film is formed the present invention relates to a kind of aluminium compound and using the aluminium compound.
Background technology
Conventionally, there is known use triisobutyl aluminium (triisobutylaluminum, TIBA), dimethyl hydrogenated aluminium (dimethylaluminum hydride, DMAH), dimethylethyl amine aluminium alkane (dimethylethylamine alane, DMEAA) or N- crassitude aluminium alkane (N-methylpyrrolidine alane, MPA) etc. as starting compound and passes through Chemical vapour deposition technique formed aluminium film method [J.Org.Chem., 1990,55 (9), the 2968-2969 pages； Chemistry of Materials, 1994,6 (7), the 935-942 pages].But because this aluminium film forms raw material not It is stable and easily decomposes and be difficult with, or due to forming if raw material is exposed in air directly quilt if this aluminium film Light, therefore by sea the problem of sending is needed with that can not be transported with aircraft.Due to being used for shape in semiconductor fabrication process Trimethyl aluminium into pellumina is also directly ignited when being exposed in air, therefore is needed with that can not be transported with aircraft By sea the problem of sending.
Thus, containing needed for semiconductor element manufacture is formed in order to pass through chemical vapour deposition technique or atomic layer deposition method Aluminium film is, it is necessary to the high aluminum feedstock compound of heat endurance or the aluminum feedstock compound that can be transported with aircraft.
The content of the invention
Technical problem
Therefore, the present invention provides a kind of aluminium compound and forms the method containing aluminium film using it.
But the technical problems to be solved by the invention are not limited to above-mentioned mentioned technical problem, art technology Personnel can be expressly understood that the other technologies problem not referred to from following record.
Technical scheme
The first aspect of the present invention provides a kind of aluminium compound represented by following chemical formula 1：
[chemical formula 1]
R3Al·L；
In above-mentioned chemical formula 1,
Each R separately includes the C of straight or branched3-8Alkyl；
L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
The second aspect of the present invention provides a kind of containing for the aluminium compound involved by first aspect including the invention described above Aluminium film formation composition.
The third aspect of the present invention provides a kind of aluminium compound that use represents by following chemical formula 1 to be formed containing aluminium film Forming method containing aluminium film：
[chemical formula 1]
R3Al·L
In above-mentioned chemical formula 1,
Each R separately includes the C of straight or branched3-8Alkyl；
L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
Beneficial effect
Example is realized according to the one of the present invention, using the teaching of the invention it is possible to provide the alkyl aluminum addition product and make that a kind of heat endurance is improved Use it to form the method containing aluminium film.Particularly, the aluminium compound involved by example can be realized to be formed using the one of the present invention Containing aluminium film.
Can being used containing aluminium film when manufacturing semiconductor devices for example manufacture is realized according to the one of the present invention, for example, Ti-Al Alloy film etc. can be as transistor gate electrode material etc. use.
The aluminium compound involved by example or the composition of formation containing aluminium film and many institute's weeks in the past are realized by the one of the present invention The compound or composition known compare, its excellent heat stability, therefore easily keeping and transport the aluminium compound or containing aluminium film Formation composition, and be used in various thin film deposition processes.Especially since as being liquid under normal temperatureiPr3Al·NMe2 nBu compounds are liquid at normal temperatures, therefore its vapour pressure is higher and is easily vaporized, can be with uniform Concentration is fed on extensive substrate, so as to reduce fire risk, but also is applicable to semiconductor device In part, display device manufacturing process etc..
Brief description of the drawings
Fig. 1 represents the thermogravimetric analysis (thermalgravimetry of the aluminium compound of 1 manufacture according to an embodiment of the invention Analysis, TGA) result.
Fig. 2 represents the differential scanning calorimetry (differential of the aluminium compound of 1 manufacture according to an embodiment of the invention Scanning calorimetry, DSC) result.
Fig. 3 represents that the film with underlayer temperature of atomic layer deposition method grows in embodiments of the invention 2.
Fig. 4 represents that the film with underlayer temperature of atomic layer deposition method grows in embodiments of the invention 3.
Embodiment
Embodiments of the invention are described in detail with reference to the accompanying drawings, so that one of ordinary skill in the art can be easily Implement the present invention.But the present invention can realize in various different formats, it is not limited to described herein realize example and embodiment. In addition, in order to clearly state the present invention, the part unrelated with explanation is eliminated in the accompanying drawings, throughout the specification similar portion Similar reference is used.
In the entire disclosure of the present invention, when describing certain part with another part " connection ", not only include " directly The situation of connection ", include situation of the centre across other devices and " electrical connection ".
In the entire disclosure of the present invention, when describe a certain part be located at another part " on " when, not only include this The situation of a certain part and another component contact, in addition to miscellaneous part between both parts be present.
In the entire disclosure of the present invention, when describing a certain inscape of certain a part of "comprising", not clear and definite In the case of opposite record, do not indicate that and exclude other inscapes, and represent that other inscapes can also be included.
The term " about " of expression degree that is used in the entire disclosure of the present invention, " substantial " etc., show to institute When the intrinsic manufacture of the implication that refers to and material allowable error, used with the numerical value or close to the implication of the numerical value, and be used for The improper use of immoral infringer is prevented in order to help to understand the present invention and refers to the disclosure of accurate or absolute numerical value.
The term " ... the step of " used in the entire disclosure of the present invention does not indicate that " the step of being used for ... ".
In the entire disclosure of the present invention, the term " combinations thereof " included in the expression of Markush form represents choosing Freely mixing or combination more than one of group of inscape composition described in the expression in Markush form, represents bag Containing more than one of group being made up of above-mentioned inscape.
In the entire disclosure of the present invention, " A and/or B " record represent " A or B or A and B ".
In the entire disclosure of the present invention, term " alkyl " can be included with 1 to 12 carbon atom, 1 to 10 carbon Atom, 1 to 8 carbon atom, 1 to 5 carbon atom, 3 to 8 carbon atoms or 3 to 5 carbon atoms straight or branched alkyl. For example, the alkyl can be methyl, ethyl, n-propyl (nPr), isopropyl (iPr), normal-butyl (nBu), the tert-butyl group (tBu)、 Isobutyl group (iBu), sec-butyl (sBu), amyl group, hexyl, isohesyl, heptyl, 4,4- dimethyl amyl groups, octyl group, 2,2,4- trimethyls Amyl group, nonyl, decyl, undecyl, dodecyl and its isomers etc., but can be with not limited to this.
In the entire disclosure of the present invention, term " alkoxy " refers to the as above institute combined via oxygen linker (- O-) The alkyl stated.
In the entire disclosure of the present invention, term " halogen " or " halogen " refer to fluorine (F), chlorine (Cl), bromine (Br) or iodine (I)。
In the entire disclosure of the present invention, for term " straight chain or cyclic ether ", above-mentioned " linear " refers to contain There is the ether of two straight or branched alkyls with 1 to 8 carbon atom or 1 to 5 carbon atom, said two alkyl can be with It is mutually the same or differ；Above-mentioned " cyclic ether " refers to the cyclic ethers containing the alkylene with 2 to 8 or 2 to 5 carbon atoms.
In the entire disclosure of the present invention, for term " straight chain or cyclic amine ", above-mentioned " straight chain amine " refers to contain Have one to three two straight or branched alkyl with 1 to 8 carbon atom or 1 to 5 carbon atom amine (that is, the first amine, Second amine or triamine), in the case where the alkyl is two or three the alkyl can with mutually the same or differ, on State " cyclic amine " and refer to the cyclammonium containing 2 to 8 or 2 to 5 carbon atoms.
Below, the realization example of the present invention is described in detail, but the present invention can be not limited to this.
The first aspect of the present invention provides a kind of aluminium compound represented by following chemical formula 1：
[chemical formula 1]
R3Al·L
In above-mentioned chemical formula 1,
Each R separately includes the C of straight or branched3-8Alkyl；
L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
In the one of the present invention realizes example, the straight or branched C3-8Alkyl for example may include n-propyl (nPr), isopropyl Base (iPr), normal-butyl (nBu), the tert-butyl group (tBu), isobutyl group (iBu), sec-butyl (sBu), amyl group and its isomer etc., but This can be not limited to.The straight or branched C3-8Alkyl may include isopropyl or the tert-butyl group, but can be not limited to this.
One in the present invention realizes example, and the linear may include with 1 to 8 carbon atom or 1 to 5 carbon atom The ether of two straight or branched alkyls, said two alkyl can be with mutually the same or differ, but can be not limited to this.Institute Stating " cyclic ether " may include the cyclic ethers containing the alkylene with 2 to 8 or 2 to 5 carbon atoms, but can be not limited to this.Institute Stating straight chain amine may include containing one to three two straight or branched alkane with 1 to 8 carbon atom or 1 to 5 carbon atom The amine (that is, the first amine, the second amine or triamine) of base, in the case where the alkyl is two or three, the alkyl can be with that This is identical or differs, but can be not limited to this.The cyclic amine may include the cyclammonium containing 2 to 8 or 2 to 5 carbon atoms, But this can be not limited to.
The aluminium compound represented by above-mentioned chemical formula 1 refers to the R3Al and the L addition product (adduct).
In the one of the present invention realizes example, the L may include the asymmetric amine represented by following chemical formula 2, but can be not It is limited to this：
[chemical formula 2]
NR1R2R3
In above-mentioned chemical formula 2, R1、R2And R3Separately represent the C of straight or branched1-5Alkyl, wherein, R1、R2With R3Except the situation of all same.
In the one of the present invention realizes example, the C of the straight or branched1-5Alkyl for example may include methyl, ethyl, positive third Base (nPr), isopropyl (iPr), normal-butyl (nBu), the tert-butyl group (tBu), isobutyl group (iBu), sec-butyl (sBu), amyl group and its same Enantiomers etc., but this can be not limited to.
In the one of the present invention realizes example, the L can include dimethyl ether, diethyl ether, methyl ethyl ether or tetrahydrochysene furan The ethers (ether) muttered, or can be include trimethylamine, triethylamine, dimethyl amine, methyl-diethyl-amine, dimethyl propylamine, The triamine of dimethyl butylamine and dimethylamylamine, but this can be not limited to, the propyl group, butyl or amyl group include theirs The isomer of straight or branched.
One in the present invention realizes example, in the case where forming aluminiferous metals films or nitride film, will as with not comprising The situation that the aluminium compound of the addition product of the amine of oxygen (O) atom is used as precursor is more appropriate, but can be not limited to this.
In the one of the present invention realizes example, the aluminium compound can be liquid or fusing point consolidating close to normal temperature at normal temperatures Body, but this can be not limited to.
In the one of the present invention realizes example, the aluminium compound can be liquid, but can be not limited to this.
One in the present invention realizes example, the aluminium compound may include triisopropylaluminiuand trimethylamine [iPr3Al· MMe3], triisopropylaluminiuand triethylamine [iPr3Al·NEt3], triisopropylaluminiuand dimethyl amine [iPr3Al·NEtMe2]、 Triisopropylaluminiuand dimethyl butylamine [iPr3Al·NMe2 nBu], three (tert-butyl group) aluminium diethyl ether [tBu3Al·OEt2], three (tert-butyl group) aluminium tetrahydrofuran [tBu3Al·O(CH2)4], three (tert-butyl group) aluminium trimethylamines [tBu3Al·NMe3], three (uncles Butyl) aluminium triethylamine [tBu3Al·NEt3] or three (tert-butyl group) aluminium dimethyl amines [tBu3Al·NEtMe2] etc., it is described Propyl group, butyl or amyl group include their straight or branched isomer.
In the one of the present invention realizes example, chemical vapour deposition technique (CVD) or atom are applied in the aluminium compound In the case of in layer sedimentation (ALD), the aluminium compound represented by above-mentioned chemical formula 1 is liquid under normal temperature or depositing temperature Situation can be more favourable.For example, the triisopropylaluminiuand diethyl ether [iPr3Al·OEt2], triisopropylaluminiuand dimethyl butylamine [iPr3Al·NMe2 nBu] or triisopropylaluminiuand tetrahydrofuran [iPr3Al·O(CH2)4] it is liquid at normal temperatures.
The second aspect of the present invention provides a kind of forms use including the aluminium compound that is represented by following chemical formula 1 containing aluminium film Composition：
[chemical formula 1]
R3Al·L
In above-mentioned chemical formula 1,
Each R separately includes the C of straight or branched3-8Alkyl；
L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
In the one of the present invention realizes example, the straight or branched C3-8Alkyl for example may include n-propyl (nPr), isopropyl Base (iPr), normal-butyl (nBu), the tert-butyl group (tBu), isobutyl group (iBu), sec-butyl (sBu), amyl group and its isomer etc., but This can be not limited to.The straight or branched C3-8Alkyl may include isopropyl or the tert-butyl group, but can be not limited to this.
One in the present invention realizes example, and the linear may include with 1 to 8 carbon atom or 1 to 5 carbon atom The ether of two straight or branched alkyls, said two alkyl can be with mutually the same or differ, but can be not limited to this.Institute Stating " cyclic ether " may include the cyclic ethers containing the alkylene with 2 to 8 or 2 to 5 carbon atoms, but can be not limited to this.Institute Stating straight chain amine may include containing one to three two straight or branched alkane with 1 to 8 carbon atom or 1 to 5 carbon atom The amine (that is, the first amine, the second amine or triamine) of base, in the case where the alkyl is two or three, the alkyl can be with that This is identical or differs, but can be not limited to this.The cyclic amine may include the cyclammonium containing 2 to 8 or 2 to 5 carbon atoms, But this can be not limited to.
The aluminium compound represented by above-mentioned chemical formula 1 refers to the R3Al and the L addition product (adduct).
In the one of the present invention realizes example, the L may include the asymmetric amine represented by following chemical formula 2, but can be not It is limited to this：
[chemical formula 2]
NR1R2R3
In above-mentioned chemical formula 2, R1、R2And R3Separately represent the C of straight or branched1-5Alkyl, wherein, R1、R2With R3Except the situation of all same.
In the one of the present invention realizes example, the C of the straight or branched1-5Alkyl for example may include methyl, ethyl, positive third Base (nPr), isopropyl (iPr), normal-butyl (nBu), the tert-butyl group (tBu), isobutyl group (iBu), sec-butyl (sBu), amyl group and its same Enantiomers etc., but this can be not limited to.
In the one of the present invention realizes example, the L can include dimethyl ether, diethyl ether, methyl ethyl ether or tetrahydrochysene furan The ethers (ether) muttered, or can be include trimethylamine, triethylamine, dimethyl amine, methyl-diethyl-amine, dimethyl propylamine, The triamine of dimethyl butylamine and dimethylamylamine, but this can be not limited to, the propyl group, butyl or amyl group include theirs The isomer of straight or branched.
One in the present invention realizes example, in the case where forming aluminiferous metals films or nitride film, will as with not comprising The situation that the aluminium compound of the addition product of the amine of oxygen (O) atom is used as precursor is more appropriate, but can be not limited to this.
In the one of the present invention realizes example, the aluminium compound can be liquid or fusing point consolidating close to normal temperature at normal temperatures Body, but this can be not limited to.
In the one of the present invention realizes example, the aluminium compound can be liquid, but can be not limited to this.
In the one of the present invention realizes example, chemical vapour deposition technique is applied to composition in the formation containing aluminium film (CVD) in the case of or in atomic layer deposition method (ALD), by the aluminium compound that above-mentioned chemical formula 1 represents in normal temperature or deposition temperature Degree is lower can be more favourable for the situation of liquid.
One in the present invention realizes example, the aluminium compound may include triisopropylaluminiuand diethyl ether [iPr3Al· OEt2], triisopropylaluminiuand tetrahydrofuran [iPr3Al·O(CH2)4], triisopropylaluminiuand trimethylamine [iPr3Al·MMe3], three Isopropyl aluminium triethylamine [iPr3Al·NEt3], triisopropylaluminiuand dimethyl amine [iPr3Al·NEtMe2], triisopropyl Aluminium dimethyl butylamine [iPr3Al·NMe2 nBu], three (tert-butyl group) aluminium diethyl ether [tBu3Al·OEt2], three (tert-butyl groups) Aluminium tetrahydrofuran [tBu3Al·O(CH2)4], three (tert-butyl group) aluminium trimethylamines [tBu3Al·NMe3], three (tert-butyl group) aluminium Triethylamine [tBu3Al·NEt3] or three (tert-butyl group) aluminium dimethyl amines [tBu3Al·NEtMe2] etc., but can be not limited to This, the propyl group, butyl or amyl group include their straight chain or straight chain isomer.
In the one of the present invention realizes example, the composition of formation containing aluminium film can be applied to atomic layer deposition method or change Learn in vapour deposition process, but this can be not limited to.
The third aspect of the present invention, which provides, a kind of to be formed containing aluminium including the use of the aluminium compound represented by following chemical formula 1 The forming method containing aluminium film of the method for film：
[chemical formula 1]
R3Al·L
In above-mentioned chemical formula 1,
Each R separately includes the C of straight or branched3-8Alkyl；
L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
In the one of the present invention realizes example, the straight or branched C3-8Alkyl may include isopropyl or the tert-butyl group, but can be simultaneously Not limited to this.
In the one of the present invention realizes example, the L may include the asymmetric amine represented by following chemical formula 2, but can be not It is limited to this：
[chemical formula 2]
NR1R2R3
In above-mentioned chemical formula 2, R1、R2And R3Separately represent the C of straight or branched1-5Alkyl, wherein, R1、R2With R3Except the situation of all same.
In the one of the present invention realizes example, the L can include dimethyl ether, diethyl ether, methyl ethyl ether or tetrahydrochysene furan The ethers (ether) muttered, or can be include trimethylamine, triethylamine, dimethyl amine, methyl-diethyl-amine, dimethyl propylamine, The triamine of dimethyl butylamine and dimethylamylamine, the propyl group, butyl or amyl group include same point of their straight or branched Isomers.
In the one of the present invention realizes example, the aluminium compound can be liquid, but can be not limited to this.
One in the present invention realizes example, the aluminium compound may include triisopropylaluminiuand diethyl ether [iPr3Al· OEt2], triisopropylaluminiuand tetrahydrofuran [iPr3Al·O(CH2)4], triisopropylaluminiuand trimethylamine [iPr3Al·MMe3], three Isopropyl aluminium triethylamine [iPr3Al·NEt3], triisopropylaluminiuand dimethyl amine [iPr3Al·NEtMe2], triisopropyl Aluminium dimethyl butylamine [iPr3Al·NMe2 nBu], three (tert-butyl group) aluminium diethyl ether [tBu3Al·OEt2], three (tert-butyl groups) Aluminium tetrahydrofuran [tBu3Al·O(CH2)4], three (tert-butyl group) aluminium trimethylamines [tBu3Al·NMe3], three (tert-butyl group) aluminium Triethylamine [tBu3Al·NEt3] or three (tert-butyl group) aluminium dimethyl amines [tBu3Al·NEtMe2] etc., the propyl group, butyl Or amyl group includes their straight or branched isomer.
In the one of the present invention realizes example, the formation containing aluminium film passes through atomic layer deposition method or chemical vapour deposition technique To perform, but this can be not limited to.
It is described to may include aluminum metal film, Ti-Al alloy film or aluminum oxide containing aluminium film in the one of the present invention realizes example Film, but this can be not limited to.
In the one of the present invention realizes example, the aluminium compound represented by above-mentioned chemical formula 1 can be used to pass through chemical vapor deposition Area method or atomic layer deposition method form aluminum metal film, Ti-Al alloy film or aluminum oxide film etc..
In addition, it can understand or predict warptBu3Al [=((CH3)3C)3Al]、iPr3Al [=((CH3)2CH)3Al] decompose And form the reaction of aluminum hydride.
((CH3)3C)3Al→H3Al+(CH3)2C=CH2；
((CH3)2CH)3Al→H3Al+(CH3) CH=CH2；
The aluminum hydride can by with TiCl4React and form Ti-Al alloy films.
H3Al+TiCl4→Ti-Al+HCl。
The known aluminum metal film having using aluminum hydride-amine additives (alane-amine adduct) such as DMEAA and MPA Forming method and Ti-Al alloy film forming method, but be actually difficult to use because DMEAA and MPA heat endurance is insufficient In the manufacture of semiconductor element.Although in addition, the heat endurance of (tert-butyl group) aluminium is higher three compared with DMEAA and MPA, In order to use in being manufactured in semiconductor element and the preferred thermal stability material higher than three (tert-butyl group) aluminium.Can be with manufacture half The purpose of conductor realizes the ethers addition product or three (tert-butyl group) aluminium of three (tert-butyl group) aluminium involved by example using the one of the present invention Amine additives.The one of the present invention ethers for realizing triisopropylaluminiuand involved by example can be used to manufacture the purpose of semiconductor The amine additives of addition product or triisopropylaluminiuand.In the case where forming aluminiferous metals film or nitride film rather than alumite, Situation using the addition product with the amine not comprising oxygen (O) atom is more suitable for, but can be not limited to this.
Embodiment
Below, the present invention is described in more detail using embodiment, but the present invention is not limited thereto.
[embodiment]
<Embodiment 1>iPr3Al·NMe2 nBu manufacture
167g triisopropylaluminiuand-tetrahydrofuran is added in the Schlenk bottle with the dried 1000mL of flame (iPr3Al·O(CH2)2) (1 equivalent, 0.731mol).308mL N, N- dimethyl butylamines are added into the bottle at normal temperatures After (N, N-dimethylbutylamine) (3 equivalents, 2.194mol), reaction solution is set to flow back 22 hours.
After above-mentioned reaction terminates, volatility side reaction thing is removed under reduced pressure and is distilled and is obtained under reduced pressure The colourless liquid compound 132g (70%) represented by following chemical formula 3.
[chemical formula 3]
Boiling point (bp) is 80 (0.25 support (torr))；
Elementary analysis (elemental analysis) calculated value (C15H36NAl)：C 69.98, H 14.10, N 5.44； Measured value：C 68.99, H 14.18, N 5.25；
1H-NMR(400MHz,C6D6,25)δ2.482(t,2H,N(CH3)2(CH2CH2CH2CH3))、1.929(s,6H,N (CH3)2(CH2CH2CH2CH3))、1.421(d,18H,CH(CH3)2)、1.005(q,2H,N(CH3)2(CH2CH2CH2CH3))、 0.921(m,2H,N(CH3)2(CH2CH2CH2CH3))、0.748(t,3H,N(CH3)2(CH2CH2CH2CH3)), 0.493 (heptet (septet),3H,CH(CH3)2)。
<Embodiment 2>UseiPr3Al·NMe2 nBu compounds and ozone (O3) gas formed by atomic layer deposition method Alumite
Enter and be about to what is manufactured according to embodiment 1iPr3Al·NMe2 nBu is used as precursor and utilizes atomic layer deposition method (ALD) To form the experiment of alumite.Now, matrix uses silicon (Si) chip.The matrix is heated to be 250 DEG C to 350 DEG C.This Outside, the precursor compound being urged into the container of stainless steel is heated to 100 DEG C of temperature, and makes 60sccm flow velocitys Argon gas (Ar) flows through the container, thus reacts the ALD that the precursor compound is supplied to for performing atomic layer deposition method In device.The internal pressure of the ALD reactors is maintained at 3 supports.200 following ADL raw materials supply cycles are repeated：To The ALD reactors supply the precursor compound gas three seconds, then supply argon gas 5 seconds, then ozone supply (O3) gas 5 Second, argon gas is then supplied again 10 seconds.The alumite for showing to be thusly-formed in Fig. 3 supplies the film under the cycle in every ALD raw materials Growth.As shown in figure 3, it can confirm to supply the film under the cycle per ALD raw materials in the range of underlayer temperature is 250 DEG C to 350 DEG C Grow constant.
<Embodiment 3>UseiPr3Al·OEt2Compound and ozone (O3) gas forms aluminium by atomic layer deposition method Oxide-film
Enter to be about toiPr3Al·OEt2The experiment of alumite is formed as precursor and using atomic layer deposition method (ALD). Except generaliPr3Al·OEt2Outside situation as precursor, alumite is formed under the same conditions as in practical example 2.Show in Fig. 4 Go out the alumite being thusly-formed to grow in the film that every ALD raw materials were supplied under the cycle.As shown in figure 4, it can confirm in underlayer temperature It is constant to supply the film growth under the cycle in the range of 250 DEG C to 350 DEG C per ALD raw materials.
The feelings of trialkyl aluminium compound or the composition including it can also can not be being used because of the reasons why secure context The compound and composition of the present invention are used under condition.Particularly, the liquid transporting device used in semiconductor fabrication process (liquid delivery system, LDS) or directly liquid injection (direct liquid injection, DLI) device etc. In, easily serve as Liquid precursor composition as the compound and composition under normal temperature for liquid.By making to be encased in water-bath Bottle (bubbler) in precursor composition vaporization and to membrane formation device supply in the case of, due to Liquid precursor composition Constant surface area, therefore precursor composition can be made to vaporize and supply by constant speed, if but solid precursor composition is entered The surface area that row vaporizes then solid changes, so as to be difficult to precursor composition is supplied by constant speed vaporization.Although Solid precursor composition can also be dissolved into the solution formed in solvent and be used as Liquid precursor composition, but due to that can not make The vapour pressure or vaporization rate of solvent and the vapour pressure or vaporization rate of solid precursor are completely the same, therefore before use is by solid Body easily produces change in concentration or the spray nozzle clogging of DLI devices etc. during being dissolved into the Liquid precursor composition formed in solvent The problem of.Due to this reason, Liquid precursor composition typically is used in semiconductor fabrication process, only can not use liquid Precursor composition in particular cases uses solid precursor composition.
Foregoing explanation of the invention is only to illustrate, it will be understood by those within the art that, do not changing this hair In the case of bright technological thought or essential feature, it can be easily deformed as other embodiments.Therefore, above-mentioned record Embodiment be appreciated that in all respects all to be exemplary rather than limited.For example, the explanation in the form of single Each inscape can also disperse to implement, the inscape illustrated in the same manner with dispersing morphology can also be real with combining form Apply.
It should be appreciated that the scope of the present invention is limited by appended claims rather than above-mentioned detailed description, from right The derived embodiment for having altered or deforming of implication, scope and its impartial concept in claim is all contained in the present invention's In the range of.

Claims (18)

  1. A kind of 1. aluminium compound represented by following chemical formula 1：
    [chemical formula 1]
    R3Al·L
    In the chemical formula 1,
    Each R separately includes the C of straight or branched3-8Alkyl；
    L includes straight chain or cyclic amine.
  2. 2. aluminium compound according to claim 1, wherein,
    The C of the straight or branched3-8Alkyl includes isopropyl or the tert-butyl group.
  3. 3. aluminium compound according to claim 1, wherein,
    The L includes the asymmetric amine represented by following chemical formula 2：
    [chemical formula 2]
    NR1R2R3
    In the chemical formula 2, R1、R2And R3Separately represent the C of straight or branched1-5Alkyl, wherein, R1、R2And R3 Except identical situation.
  4. 4. aluminium compound according to claim 1, wherein,
    The L includes dimethyl amine, methyl-diethyl-amine, dimethyl propylamine, dimethyl butylamine or dimethylamylamine.
  5. 5. aluminium compound according to claim 1, wherein,
    The aluminium compound is liquid.
  6. 6. aluminium compound according to claim 1, wherein,
    The aluminium compound include triisopropylaluminiuand trimethylamine [iPr3Al·MMe3], triisopropylaluminiuand triethylamine [iPr3Al·NEt3], triisopropylaluminiuand dimethyl amine [iPr3Al·NEtMe2], triisopropylaluminiuand dimethyl butylamine [iPr3Al·NMe2 nBu], three (tert-butyl group) aluminium diethyl ether [tBu3Al·OEt2], three (tert-butyl group) aluminium tetrahydrofurans [tBu3Al·O(CH2)4], three (tert-butyl group) aluminium trimethylamines [tBu3Al·NMe3], three (tert-butyl group) aluminium triethylamines [tBu3Al·NEt3] or three (tert-butyl group) aluminium dimethyl amines [tBu3Al·NEtMe2]。
  7. 7. a kind of being formed containing aluminium film for aluminium compound including being represented by following chemical formula 1 uses composition：
    [chemical formula 1]
    R3Al·L
    In the chemical formula 1,
    Each R separately includes the C of straight or branched3-8Alkyl；
    L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
  8. 8. the composition of formation containing aluminium film according to claim 7, wherein,
    The C of the straight or branched3-8Alkyl includes isopropyl or the tert-butyl group.
  9. 9. the composition of formation containing aluminium film according to claim 7, wherein,
    The L includes dimethyl ether, diethyl ether, methyl ethyl ether, tetrahydrofuran, trimethylamine, triethylamine, dimethyl amine, methyl Diethylamine, dimethyl propylamine, dimethyl butylamine or dimethylamylamine.
  10. 10. the composition of formation containing aluminium film according to claim 7, wherein,
    The aluminium compound is liquid.
  11. 11. the composition of formation containing aluminium film according to claim 7, wherein,
    The aluminium compound include triisopropylaluminiuand diethyl ether [iPr3Al·OEt2], triisopropylaluminiuand tetrahydrofuran [iPr3Al·O(CH2)4], triisopropylaluminiuand trimethylamine [iPr3Al·MMe3], triisopropylaluminiuand triethylamine [iPr3Al· NEt3], triisopropylaluminiuand dimethyl amine [iPr3Al·NEtMe2], triisopropylaluminiuand dimethyl butylamine [iPr3Al· NMe2 nBu], three (tert-butyl group) aluminium diethyl ether [tBu3Al·OEt2], three (tert-butyl group) aluminium tetrahydrofurans [tBu3Al·O (CH2)4], three (tert-butyl group) aluminium trimethylamines [tBu3Al·NMe3], three (tert-butyl group) aluminium triethylamines [tBu3Al·NEt3] or Three (tert-butyl group) aluminium dimethyl amines [tBu3Al·NEtMe2]。
  12. 12. a kind of form the forming method containing aluminium film containing aluminium film including the use of the aluminium compound represented by following chemical formula 1：
    [chemical formula 1]
    R3Al·L
    In the chemical formula 1,
    Each R separately includes the C of straight or branched3-8Alkyl；
    L includes the material in the group being made up of straight chain or cyclic ether and straight chain or cyclic amine.
  13. 13. forming method containing aluminium film according to claim 12, wherein,
    The C of the straight or branched3-8Alkyl includes isopropyl or the tert-butyl group.
  14. 14. forming method containing aluminium film according to claim 12, wherein,
    The L includes dimethyl ether, diethyl ether, methyl ethyl ether, tetrahydrofuran, trimethylamine, triethylamine, dimethyl amine, methyl Diethylamine, dimethyl propylamine, dimethyl butylamine or dimethylamylamine.
  15. 15. forming method containing aluminium film according to claim 12, wherein,
    The aluminium compound is liquid.
  16. 16. forming method containing aluminium film according to claim 12, wherein,
    The aluminium compound include triisopropylaluminiuand diethyl ether [iPr3Al·OEt2], triisopropylaluminiuand tetrahydrofuran [iPr3Al·O(CH2)4], triisopropylaluminiuand trimethylamine [iPr3Al·MMe3], triisopropylaluminiuand triethylamine [iPr3Al· NEt3], triisopropylaluminiuand dimethyl amine [iPr3Al·NEtMe2], triisopropylaluminiuand-dimethyl butylamine [iPr3Al· NMe2 nBu], three (tert-butyl group) aluminium diethyl ether [tBu3Al·OEt2], three (tert-butyl group) aluminium tetrahydrofurans [tBu3Al·O (CH2)4], three (tert-butyl group) aluminium trimethylamines [tBu3Al·NMe3], three (tert-butyl group) aluminium triethylamines [tBu3Al·NEt3] or Three (tert-butyl group) aluminium dimethyl amines [tBu3Al·NEtMe2]。
  17. 17. forming method containing aluminium film according to claim 12, wherein,
    Formed by atomic layer deposition method or chemical vapour deposition technique and described contain aluminium film.
  18. 18. forming method containing aluminium film according to claim 12, wherein,
    It is described to include aluminum metal film, Ti-Al alloy film or aluminum oxide film containing aluminium film.
CN201680010611.1A 2015-02-17 2016-02-17 Aluminium compound and using its formed method containing aluminium film Pending CN107406465A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR10-2015-0023966 2015-02-17
KR20150023966 2015-02-17
KR20150125732 2015-09-04
KR10-2015-0125732 2015-09-04
PCT/KR2016/001609 WO2016133365A1 (en) 2015-02-17 2016-02-17 Aluminum compound and method for forming aluminum-containing film using same

Publications (1)

Publication Number Publication Date
CN107406465A true CN107406465A (en) 2017-11-28

Family

ID=56692388

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680010611.1A Pending CN107406465A (en) 2015-02-17 2016-02-17 Aluminium compound and using its formed method containing aluminium film

Country Status (3)

Country Link
KR (1) KR101965219B1 (en)
CN (1) CN107406465A (en)
WO (1) WO2016133365A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112513053A (en) * 2018-07-30 2021-03-16 Up化学株式会社 Aluminum compound and method for forming aluminum-containing film using the same
CN115279940A (en) * 2020-02-24 2022-11-01 Up化学株式会社 Aluminum precursor compound, method for preparing the same, and method for forming aluminum-containing film using the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102163933B1 (en) * 2018-01-30 2020-10-12 주식회사 메카로 The organometallic compounds and the thin film using thereof
KR102087858B1 (en) * 2018-04-18 2020-03-12 주식회사 한솔케미칼 Precursor compound for atomic layer deposition(ald), chemical vapor deposition(cvd) and ald/cvd deposition using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1280209A (en) * 1999-06-11 2001-01-17 罗姆和哈斯公司 Compound for forming A102 film by using chemical steam deposition and method for preparing said compound
CN1746173A (en) * 2004-09-02 2006-03-15 罗门哈斯电子材料有限公司 Method

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3907581A1 (en) * 1989-03-09 1990-09-13 Merck Patent Gmbh METAL ORGANIC ADDUCT COMPOUNDS
KR20070122435A (en) * 2007-12-13 2007-12-31 (주)디엔에프 Aluminum compound for forming aluminum films by chemical vapor deposition and their synthesis
KR101569224B1 (en) * 2007-12-26 2015-11-13 제이에스알 가부시끼가이샤 Composition for forming aluminum film and method for forming aluminum film
JP6065840B2 (en) * 2011-11-02 2017-01-25 宇部興産株式会社 Tris (dialkylamide) aluminum compound and method for producing aluminum-containing thin film using the aluminum compound
CN104755485B (en) * 2012-12-25 2017-07-11 株式会社艾迪科 The manufacture method of aluminium compound, film formation raw material and film

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1280209A (en) * 1999-06-11 2001-01-17 罗姆和哈斯公司 Compound for forming A102 film by using chemical steam deposition and method for preparing said compound
CN1746173A (en) * 2004-09-02 2006-03-15 罗门哈斯电子材料有限公司 Method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
C. NIAMH MCMAHON,ET AL.: ""Alcohol and secondary amine complexes of tri-tert-butylaluminium: enhanced stability through intramolecular hydrogen bonding"", 《J. CHEM. SOC., DALTON TRANS.》 *
美国化学会: ""RN号"", 《STN》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112513053A (en) * 2018-07-30 2021-03-16 Up化学株式会社 Aluminum compound and method for forming aluminum-containing film using the same
CN112513053B (en) * 2018-07-30 2024-02-23 Up化学株式会社 Aluminum compound and method for forming aluminum-containing film using the same
US11912728B2 (en) 2018-07-30 2024-02-27 Up Chemical Co., Ltd. Aluminum compounds and methods of forming aluminum- containing film using the same
CN115279940A (en) * 2020-02-24 2022-11-01 Up化学株式会社 Aluminum precursor compound, method for preparing the same, and method for forming aluminum-containing film using the same
CN115279940B (en) * 2020-02-24 2024-04-09 Up化学株式会社 Aluminum precursor compound, method for producing the same, and method for forming aluminum-containing film using the same

Also Published As

Publication number Publication date
KR101965219B1 (en) 2019-04-03
WO2016133365A1 (en) 2016-08-25
KR20160101697A (en) 2016-08-25

Similar Documents

Publication Publication Date Title
JP6871161B2 (en) Compositions for depositing silicon-containing membranes and methods using them
TWI549958B (en) Molybdenum (iv) amide precursors and use thereof in atomic layer deposition
TWI415855B (en) Hafnium-based compound, hafnium-based film-forming material, and hafnium-based film forming method
US20190003050A1 (en) Deposition of Molybdenum Thin Films Using A Molybdenum Carbonyl Precursor
CN107406465A (en) Aluminium compound and using its formed method containing aluminium film
JP6855191B2 (en) Manufacturing method of metal thin film by atomic layer deposition method
TW201512210A (en) Organoaminosilane precursors and methods for depositing films comprising same
US20170121356A1 (en) Molybdenum silylcyclopentadienyl and silylallyl complexes and use thereof in thin film deposition
JP5916744B2 (en) Cobalt film forming method
CN109689666B (en) Group V metal compound, method for preparing same, film deposition precursor composition comprising same, and film deposition method using same
TWI734684B (en) Organometallic compounds useful for chemical phase deposition
JP2022507541A (en) Silicon precursor compound, manufacturing method, and method for forming a silicon-containing film using the silicon precursor compound.
JP6201204B2 (en) Method for depositing tungsten-containing film using tungsten compound and precursor composition for depositing tungsten-containing film containing the tungsten compound
US9556212B2 (en) Chemical deposition raw material formed of ruthenium complex and method for producing the same, and chemical deposition method
CN112513053B (en) Aluminum compound and method for forming aluminum-containing film using the same
TW201716417A (en) Method of producing aluminum oxide film, raw material for producing aluminum oxide film, and aluminum compound
US20180282358A1 (en) Alkoxide compound, thin film-forming starting material, thin film formation method, and alcohol compound
CN115279940B (en) Aluminum precursor compound, method for producing the same, and method for forming aluminum-containing film using the same
JP6565448B2 (en) Method for producing aluminum oxide film and raw material for producing aluminum oxide film
US20220333243A1 (en) Method for forming metal nitride thin film
WO2016114157A1 (en) Method for manufacturing metal carbonitride film or metalloid carbonitride film, metal carbonitride film or metalloid carbonitride film, and apparatus for manufacturing metal carbonitride film or metalloid carbonitride film
TWI771864B (en) Precursor compound for atomic layer deposition (ald) and chemical vapor deposition (cvd) and ald/cvd process using same
JP2014043640A (en) Method for manufacturing silicon-containing thin film, and silicon-containing thin film
JP5842687B2 (en) Cobalt film forming raw material and method for producing cobalt-containing thin film using the raw material
JP2016138325A (en) Production method of metal or semimetal carbonitride film

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20171128

RJ01 Rejection of invention patent application after publication