CN107403880A - The preparation method and luminescent device of luminescent device - Google Patents
The preparation method and luminescent device of luminescent device Download PDFInfo
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- CN107403880A CN107403880A CN201710640453.4A CN201710640453A CN107403880A CN 107403880 A CN107403880 A CN 107403880A CN 201710640453 A CN201710640453 A CN 201710640453A CN 107403880 A CN107403880 A CN 107403880A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
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- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Abstract
This application provides a kind of preparation method of luminescent device and luminescent device.The preparation method of the luminescent device includes：Step S1, substrate is provided, multiple pixel isolation structures and the first electrode of EL structure are provided with substrate, there is subpixel area between adjacent pixel isolation structure, the luminescent layer and second electrode of EL structure are set in each subpixel area, wherein, luminescent layer and second electrode are set away from substrate successively, and second electrode is optoelectronic pole；Step S2, quantum dot ink is set on the surface away from corresponding luminescent layer of at least one second electrode using ink-jet printing process, and be formed by curing at least one light conversion layer.Caused by this method avoid photoetching process is used the problem of waste of material, the preparation process of photophore is simplified, reduces production cost.
Description
Technical field
The application is related to light emitting device field, in particular to the preparation method and luminescent device of a kind of luminescent device.
Background technology
Quanta point material refers to all occur quantum size effects in three dimensions, i.e. the characteristic size of material and electronics
De Broglie wavelength, relevant wavelength and Exciton Bohr Radius can compare, electronics be confined to nano-space cause electron transport by
Limitation, causes electron mean free path very short, ultimately results in locality and the coherence's enhancing of electronics, now originally quasi-continuous
Energy band develops into discrete level structure.This special level structure causes quantum dot to possess luminescence generated by light and electroluminescent.
Can be by controlling structure, material and the particle diameter of quantum dot to prepare corresponding luminescent spectrum.
Luminescent device can not only combine the advantages of electroluminescent device, at the same can incorporating quantum point excite after it is highlighted
The characteristics of degree, high color purity.
Luminescent device of the prior art is mainly that the light that different colours are set on the inside of the cover plate of electroluminescent device turns
Conversion materials layer；Unwanted light conversion material layer is removed by mask and photoetching process, and then forms different light transition regions
Form different sub-pixels；Then, the cover plate and electroluminescent device fitting are realized into luminescence generated by light and electroluminescent.
Above-mentioned preparation method wastes light-converting material, and whole preparation process is complicated and cost is higher, is not suitable for big
Large-scale production.
The content of the invention
The main purpose of the application is the preparation method and luminescent device for providing a kind of luminescent device, to solve existing skill
Luminescent device production cost in art is high and the problem of preparation process complexity.
To achieve these goals, according to the one side of the application, there is provided a kind of preparation of luminescent device, above-mentioned system
Preparation Method includes：Step S1, there is provided substrate, be provided with the of multiple pixel isolation structures and EL structure on aforesaid substrate
One electrode, there is subpixel area between adjacent above-mentioned pixel isolation structure, set in each above-mentioned subpixel area above-mentioned
The luminescent layer and second electrode of EL structure, wherein, above-mentioned luminescent layer and above-mentioned second electrode are successively away from aforesaid substrate
Set, above-mentioned second electrode is optoelectronic pole；Step S2, using ink-jet printing process in the remote of at least one above-mentioned second electrode
Quantum dot ink is set corresponding to above-mentioned on the surface of luminescent layer, and is formed by curing at least one light conversion layer.
Further, above-mentioned steps S1 also includes：In at least one above-mentioned subpixel area, in above-mentioned first electrode and
Hole injection layer and/or hole transmission layer are set between above-mentioned luminescent layer.
Further, above-mentioned steps S1 also includes：In at least one above-mentioned subpixel area, in above-mentioned luminescent layer and right
Electron injecting layer and/or electron transfer layer are set between the above-mentioned second electrode answered.
Further, above-mentioned steps S2 includes：Step S21, at least one above-mentioned subpixel area, above-mentioned second
Protective layer is set on the surface away from corresponding above-mentioned luminescent layer of electrode；Step S22, using ink-jet printing process in each above-mentioned guarantor
Sheath sets above-mentioned quantum dot ink on the surface away from corresponding above-mentioned second electrode, and is formed by curing light conversion layer.
Further, one or more above-mentioned protective layers, the method to set up of each above-mentioned protective layer are set in above-mentioned steps S21
Selected from least one of physical vaporous deposition, chemical vapour deposition technique, sputtering method and vapour deposition method.
Further, above-mentioned steps S21 includes：In at least one above-mentioned subpixel area, in above-mentioned second electrode
The first protective layer, the material of above-mentioned first protective layer are formed using above-mentioned vapour deposition method on surface away from corresponding above-mentioned luminescent layer
For aluminum fluoride and/or 8-hydroxyquinoline aluminium；Splashed on the surface of the remote above-mentioned luminescent layer of above-mentioned first protective layer using above-mentioned
Penetrate method and form the second protective layer, the material of above-mentioned second protective layer is zinc oxide.
Further, above-mentioned steps S2 also includes：Step S21', at least one above-mentioned subpixel area, using spray
Black impact system sets auxiliary quantum dot ink on the surface away from corresponding above-mentioned luminescent layer of above-mentioned second electrode, and solidifies
Form auxiliary light conversion layer；Step S22', using ink-jet printing process in each above-mentioned auxiliary light conversion layer away from corresponding above-mentioned
Quantum dot ink is set on the surface of second electrode, and is formed by curing light conversion layer.
Further, above-mentioned steps S21' includes：Step S211', at least one above-mentioned subpixel area, above-mentioned
Protective layer is set on the surface away from corresponding above-mentioned luminescent layer of second electrode；Step S212', using ink-jet printing process each
Auxiliary quantum dot ink is set on the surface away from corresponding above-mentioned second electrode of above-mentioned protective layer, and is formed by curing fill-in light
Conversion layer.
Further, the material of above-mentioned protective layer be silica, silicon nitride, aluminum oxide, zinc oxide, barium monoxide, barium titanate,
Boron oxide, cerium oxide, cobalt oxide, germanium oxide, hafnium oxide, indium oxide, magnesium aluminate spinel, magnesia, manganese oxide, nickel oxide, oxygen
Change niobium, three two girls of oxidation, tantalum oxide, strontium oxide strontia, titanium oxide, titanium nitride, yittrium oxide, zirconium oxide, aluminum fluoride, barium fluoride, fluorination
Bismuth, magnesium fluoride, cerium fluoride, fluorination terbium, yttrium fluoride, zinc fluoride, molybdenum oxide, bismuth selenide, bismuth antimonide, zinc selenide, zinc sulphide, antimony
One or more in zinc, stannic selenide, artificial gold and antimony tin, or above-mentioned protective layer material for polyether sulfone, polyacrylic acid,
Polyarylate, PEI, PEN, PET, polyphenylene sulfide, polyimides, gather
Carbonic ester, cellulose acetate, 8-hydroxyquinoline aluminium and the one or more in cellulose acetate propionate.
Further, in above-mentioned steps S2, above-mentioned quantum dot ink is solidified using laser or beam energy.
According to the another aspect of the application, there is provided a kind of luminescent device, the luminescent device include substrate and electroluminescent
Structure, first electrode and multiple pixel isolation structures are provided with aforesaid substrate, is had between adjacent above-mentioned pixel isolation structure
Have a subpixel area, above-mentioned EL structure include above-mentioned first electrode, the luminescent layer for being arranged on above-mentioned subpixel area and
Second electrode, and above-mentioned luminescent layer and above-mentioned second electrode are set away from aforesaid substrate successively, above-mentioned luminescent device also includes：Extremely
A few light conversion layer, each above-mentioned light conversion layer are set on surface of the above-mentioned second electrode away from corresponding above-mentioned luminescent layer.
Further, above-mentioned luminescent device also includes：At least one protective layer, each above-mentioned protective layer are arranged on each above-mentioned
Between two electrodes and corresponding above-mentioned light conversion layer.
Further, the light transmittance of each above-mentioned protective layer is more than or equal to 70%.
Further, the material of each above-mentioned protective layer is silica, silicon nitride, aluminum oxide, zinc oxide, barium monoxide, metatitanic acid
Barium, boron oxide, cerium oxide, cobalt oxide, germanium oxide, hafnium oxide, indium oxide, magnesium aluminate spinel, magnesia, manganese oxide, nickel oxide,
Niobium oxide, three two girls of oxidation, tantalum oxide, strontium oxide strontia, titanium oxide, titanium nitride, yittrium oxide, zirconium oxide, aluminum fluoride, barium fluoride, fluorine
Change bismuth, magnesium fluoride, cerium fluoride, fluorination terbium, yttrium fluoride, zinc fluoride, molybdenum oxide, bismuth selenide, bismuth antimonide, zinc selenide, zinc sulphide, antimony
Change the one or more in zinc, stannic selenide, artificial gold and antimony tin, or the material of above-mentioned protective layer is polyether sulfone, polypropylene
Acid, polyarylate, PEI, PEN, PET, polyphenylene sulfide, polyimides,
Makrolon, cellulose acetate, 8-hydroxyquinoline aluminium and the one or more in cellulose acetate propionate.
Further, above-mentioned luminescent device also includes：At least one auxiliary light conversion layer, each above-mentioned auxiliary light conversion layer are set
Put between each above-mentioned second electrode and corresponding above-mentioned light conversion layer；The emission wavelength of each above-mentioned auxiliary light conversion layer be more than pair
The emission wavelength for the above-mentioned luminescent layer answered, and less than the emission wavelength of corresponding above-mentioned light conversion layer.
Further, each above-mentioned luminescent layer is quantum dot light emitting layer or organic luminous layer, and the hair of each above-mentioned luminescent layer
Light wave is a length of to be less than or equal to 480nm.
Further, in above-mentioned light conversion layer, the above-mentioned light conversion layer of part is red quantum dot layer, another part it is upper
It is green quantum dot layer to state light conversion layer.
Further, above-mentioned luminescent device also includes：At least one light-extraction layer, each above-mentioned light-extraction layer are arranged on each
State between light conversion layer and corresponding protective layer.
Using the technical scheme of the application, light conversion layer is formed on optoelectronic pole is gone out by the way of inkjet printing, is avoided
Using caused by photoetching process the problem of waste of material；Also, the preparation method simplifies subpixel area forming process, and then
The preparation process of photophore is simplified, reduces production cost.
Brief description of the drawings
The Figure of description for forming the part of the application is used for providing further understanding of the present application, and the application's shows
Meaning property embodiment and its illustrate be used for explain the application, do not form the improper restriction to the application.In the accompanying drawings：
Fig. 1 shows the structural representation for the luminescent device that a kind of typical embodiment of the application provides；
Fig. 2 shows the structural representation for the luminescent device that a kind of embodiment of the application provides；
Fig. 3 shows the structural representation for the luminescent device that another embodiment of the application provides；
Fig. 4 shows the structural representation for the luminescent device that the another embodiment of the application provides；And
Fig. 5 shows the structural representation for the luminescent device that another embodiment of the application provides.
Wherein, above-mentioned accompanying drawing marks including the following drawings：
01st, pixel isolation structure；11st, substrate；12nd, first electrode；20th, luminescent layer；30th, second electrode；40th, protective layer；
45th, light-extraction layer；50th, light conversion layer is aided in；60th, light conversion layer.
Embodiment
It is noted that described further below is all exemplary, it is intended to provides further instruction to the application.It is unless another
Indicate, all technologies used herein and scientific terminology are with usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative
It is also intended to include plural form, additionally, it should be understood that, when in this manual using term "comprising" and/or " bag
Include " when, it indicates existing characteristics, step, operation, device, component and/or combinations thereof.
As background technology is introduced, the preparation method of luminescent device is more complicated in the prior art, and wastes big
The light-converting material of amount, in order to solve technical problem as above, present applicant proposes a kind of preparation method of luminescent device and hair
Optical device.
In a kind of typical embodiment of the application, there is provided a kind of preparation method of luminescent device, the preparation method bag
Include：Substrate is provided, is provided with multiple pixel isolation structures and the first electrode of EL structure on aforesaid substrate, adjacent is upper
Stating between pixel isolation structure has subpixel area, and the hair of above-mentioned EL structure is set in each above-mentioned subpixel area
Photosphere and second electrode, wherein, above-mentioned luminescent layer and above-mentioned second electrode are set away from aforesaid substrate successively, above-mentioned second electrode
To go out optoelectronic pole；Step S2, using ink-jet printing process at least one above-mentioned second electrode away from corresponding above-mentioned luminescent layer
Surface on quantum dot ink is set, and be formed by curing at least one light conversion layer, form the structure shown in Fig. 1.
Above-mentioned preparation method, using the buffer action of pixel isolation structure, going out photoelectricity by the way of inkjet printing
Light conversion layer can be formed on extremely, and then is avoided using caused by photoetching process the problem of waste of material；Also, the preparation method
Sub-pixel forming process is simplified, and then simplifies the preparation process of quanta point electroluminescent device, reduces production cost.
Above-mentioned preparation method, using the buffer action of pixel isolation structure, going out photoelectricity by the way of inkjet printing
Light conversion layer can be formed on extremely, because the quantum dot ink almost all that inkjet printing goes out is used to form light conversion layer, is compared
Quantum dot ink is set in first whole face in the prior art, then come to not needing the region of film layer to perform etching the photoetching process of removal
Say, when setting the light conversion layer of same area, ink-jet printing process needs less quantum dot ink, improves quantum dot ink
Utilization rate, and then avoid using caused by photoetching process the problem of waste of material；Also, made by the way of inkjet printing
The step of standby light conversion layer, is simple, and the step of mainly shaping including inkjet printing and ink, and photoetching process prepares the step that light turns layer
Rapid complicated, it comprises at least the steps such as coating, mask, exposure, development, and for photoetching process, the preparation method simplifies
Sub-pixel forming process, and then the preparation process of quanta point electroluminescent device is simplified, and due to ink jet printing device price
Quantum dot ink is costly saved again far below lithographic equipment, in preparation process, therefore the preparation method also reduces life
Produce cost.
The material of the first electrode of the application can be tin indium oxide (ITO), zinc-tin oxide (IZO), zinc oxide (ZnO),
The one or more of tin indium oxide (ITO), indium gallium zinc oxide (IGZO) and indium tin zinc oxide (ITZO), second electrode can be with
Li, Ca, LiF/Ca, Al, Mg, Ag, Pt, Pd, Ni, Au, Nd, Ir, Cr, BaF and Ba one or more, and it is transparent or
It is translucent.
First electrode layer in the application is set on a surface of a substrate, and first electrode can be one and be covered with substrate surface
Flood electrode layer or multiple separate electrodes for being kept apart by pixel isolation structure.People in the art
Member can set a first electrode or multiple mutually isolated first electrodes according to the situation selection of reality.Work as first electrode
For one when, the first electrode be multiple EL structures public electrode, when first electrode for it is multiple when, first electrode,
Luminescent layer corresponds with second electrode, also, corresponding first electrode, luminescent layer and second electrode form an electroluminescent
Structure.
In a kind of embodiment of the application, above-mentioned steps S1 also includes：In at least one above-mentioned subpixel area, upper
State and hole injection layer and/or hole transmission layer are set between first electrode and above-mentioned luminescent layer.Hole can so be made by first
Electrode is effectively injected in luminescent layer.
In the case of not having specified otherwise, " corresponding " is all referring to the structure in same EL structure in the application
Structure sheaf in layer or same subpixel area, A and " the same electroluminescent hair of corresponding B " expressions in corresponding B expressions
The B set is contacted with A in structure sheaf or same subpixel area in photo structure.
The hole injection of the application and/or hole transmission layer can be any hole injection of the prior art and/
Or hole transmission layer, those skilled in the art can according to actual conditions select suitable material layer as hole injection and/or
Hole transmission layer.
It is effectively injected in order that obtaining electronics by second electrode in luminescent layer, the preferred above-mentioned steps S1 of the application is also wrapped
Include：In at least one above-mentioned subpixel area, electronics is set to note between above-mentioned luminescent layer and corresponding above-mentioned second electrode
Enter layer and/or electron transfer layer.
The electron injecting layer and/or electron transfer layer of the application can be any electron injecting layer of the prior art
And/or electron transfer layer, those skilled in the art can select suitable material layer as electron injecting layer according to actual conditions
And/or electron transfer layer.
Because second electrode is relatively thin, general only tens nanometers, in order to further prevent second electrode in inkjet printing
Damaged by quantum dot ink or the composition of quantum dot ink penetrates into second electrode and second electrode is caused damage.The application's
It is preferred that above-mentioned steps S2 includes：Step S21, at least one above-mentioned subpixel area, in the remote right of above-mentioned second electrode
Protective layer is set on the surface for the above-mentioned luminescent layer answered；Step S22, using ink-jet printing process in each above-mentioned protective layer 40 away from upper
Setting quantum dot ink on the surface of second electrode 30 is stated, and is formed by curing light conversion layer 60, forms the structure shown in Fig. 2.
It should be noted that protective layer can be it is as shown in Figure 2 by pixel isolation structure separate and disconnect to be formed it is multiple
Independent protective layer or set along pixel isolation body structure surface and to form an overall continuous protective layer, in order under
The convenience of text description, each protective layer only refer to its protective layer in pixel isolation inside configuration, and actual protective layer can be with
It is self-existent or continued presence entirety.
The material of protective layer in the application can be inorganic matter, such as silica, silicon nitride, aluminum oxide, zinc oxide, oxygen
Change barium, barium titanate, boron oxide, cerium oxide, cobalt oxide, germanium oxide, hafnium oxide, indium oxide, magnesium aluminate spinel, magnesia, oxidation
Manganese, nickel oxide, niobium oxide, three oxidation two girls, tantalum oxide, strontium oxide strontia, titanium oxide, titanium nitride, yittrium oxide, zirconium oxide, aluminum fluoride,
Barium fluoride, fluorination bismuth, magnesium fluoride, cerium fluoride, fluorination terbium, yttrium fluoride, zinc fluoride, molybdenum oxide, bismuth selenide, bismuth antimonide, zinc selenide,
One or more kinds of mixtures in zinc sulphide, zinc antimonide, stannic selenide, artificial gold and antimony tin；The material of protective layer also may be used
To be insulation or the higher organic matter of resistance.Such as polyether sulfone (PES), polyacrylic acid (PA), polyarylate (PAR), polyethers acyl
Imines (PEI), PEN (PEN), PET (PET), polyphenylene sulfide (PPS), polyamides
Imines (PI), makrolon (PC), cellulose acetate (CAT or TAC), 8-hydroxyquinoline aluminium (Alq3) and cellulose acetate propionate
(CAP) one or more kinds of mixtures in.The material of protective layer in the application be not limited to it is above-mentioned enumerate these.
In order to more easily set protective layer, and the preferable protective layer of forming properties, the preferred above-mentioned steps S21 of the application
Middle one or more combinations using in physical vaporous deposition, chemical vapour deposition technique, sputtering method or vapour deposition method are formed on each
State protective layer.Above-mentioned protective layer can have one or more, when there is multiple protective layers, in the preferred above-mentioned steps S21 of the application
At least two combinations in physical vaporous deposition, chemical vapour deposition technique, sputtering method or vapour deposition method can be used to form multilayer
Above-mentioned protective layer, such as, each layer in multi-protective layer can use times in different method making or protective layer
One layer of combination using two methods makes, and the preparation method of each layer in multi-protective layer can be the same or different.
In a preferred embodiment, above-mentioned protective layer at least two, the two protective layers are respectively the first protection
Layer and the second protective layer, above-mentioned steps S21 include：In at least one above-mentioned subpixel area, in the remote of above-mentioned second electrode
Above-mentioned first protective layer is formed using vapour deposition method from the surface of corresponding above-mentioned luminescent layer, the material of above-mentioned first protective layer is
Aluminum fluoride and/or 8-hydroxyquinoline aluminium；Sputtering method shape is used on the surface of the remote above-mentioned luminescent layer of above-mentioned first protective layer
Into above-mentioned second protective layer, the material of above-mentioned second protective layer is zinc oxide.
By above-mentioned preferred embodiment, one layer of aluminum fluoride and/or 8-hydroxyquinoline aluminium is deposited on luminescent layer using elder generation
The first protective layer, then on the first protective layer using sputtering method make one layer of zinc oxide the second protective layer, such bilayer
The protective layer structure being stacked can preferably protect luminescent device, protect it from the influence of external environment condition.
Also, first use and some benefit is also brought along using sputtering method after vapour deposition method, first, vapour deposition method is compared to other systems
It is smaller to the active force of the second electrode of luminescent device for Preparation Method, namely luminescent device is caused to damage in manufacturing process
Wound is also smaller, so as to protect luminescent device；Second, formed using a certain amount of oxygen can be passed through in the manufacturing process of sputtering method
Metal oxide, superfluous oxygen can damage the performance of luminescent device, using above preferred embodiment, the first protection first made
Layer can separate the oxygen of surplus, avoid the oxygen damage luminescent device of surplus, also achieve the effect of protection luminescent device
Fruit；3rd, aluminum fluoride has good translucency, and thicker thickness can be deposited, it is achieved thereby that not influenceing to light
Effectively protection device on the premise of the optical property of device；4th, the Refractive Index of Material of 8-hydroxyquinoline aluminium is smaller, with silver the
The refractive index of two electrodes is closer to, and while second electrode is protected, can add the efficiency of light extraction.
Those skilled in the art can select specific setting protective layer according to the material of the protective layer actually used
Method, wherein, chemical vapour deposition technique includes atomic layer deposition method.
In the application another kind preferred embodiment, above-mentioned steps S2 also includes：Step S21', at least one above-mentioned son
In pixel region, set and aided on the surface away from corresponding above-mentioned luminescent layer of above-mentioned second electrode using ink-jet printing process
Quantum dot ink, and it is formed by curing auxiliary light conversion layer；Step S22', using ink-jet printing process in each above-mentioned auxiliary light conversion layer
Quantum dot ink is set on 50 surface away from corresponding above-mentioned second electrode 30, and is formed by curing light conversion layer 60, is formed
Structure shown in Fig. 3.
Because every kind of quantum dot has corresponding characteristic absorption spectrum, when the light sent and the light of EL structure are changed
When the absorption spectrum of quantum dot in layer not exclusively overlaps, i.e., the light sent in EL structure can not be changed all by light
Layer absorbs, and aids in light conversion layer that the light of luminescent layer in EL structure can be converted to first to what suitable light conversion layer absorbed
Light, light conversion layer is then excited again, so by setting auxiliary light conversion layer, Ke Yiti between second electrode and light conversion layer
The amount of the light of the absorption of high first light conversion layer and the second light conversion layer, and then improve the luminous efficiency of luminescent device.Fill-in light
The emission wavelength of quantum dot in conversion layer is more than the emission wavelength of the luminescent layer of corresponding EL structure, but less than corresponding
Light conversion layer quantum dot emission wavelength.
Quantum dot ink and auxiliary quantum dot ink for luminescence generated by light include quantum dot, solvent (or making dispersant)
With curable materials, wherein, curable materials are curable resin or monomer, and it is 40~250 DEG C that solvent, which can be selected from boiling point,
Between long chain hydrocarbons, alcohol, the mixture of ester and ether is as organic solvent.Preferably, above-mentioned hydrocarbon is straight or branched alkane, example
Such as, above-mentioned hydrocarbon is C6-10Alkane.Above-mentioned organic solvent can be chlorobenzene, o-dichlorohenzene, tetrahydrofuran, methyl phenyl ethers anisole, morpholine, first
Benzene, ortho-xylene, meta-xylene, paraxylene, alkylbenzene, nitrobenzene, n-hexane, hexamethylene, normal heptane, cycloheptane, dioxy
Six rings, dichloromethane, chloroform, dichloroethanes, chloroform, chlorobenzene, 1,4 dioxanes, 1,2 dichloroethanes, 1,1,1-
Trichloroethanes, 1,1,2,2- tetrachloroethanes, naphthane, naphthalane, N,N-dimethylformamide, DMAC N,N' dimethyl acetamide, diformazan
Base sulfoxide chloroform, tetrahydrofuran, dichloromethane, toluene, n-hexane, methanol, ethanol, propyl alcohol, butanol, acetone, dioxane, two
NMF and dimethyl sulfoxide (DMSO).Wherein curable resin is selected from epoxy resin, acrylic resin, organic siliconresin, or
Corresponding monomer crosslinked formation curable resin.Ink composition can also have the crosslinking agent with double bond, light curing agent or heat cure
Agent etc..
The formula not limited to this of quantum dot ink and auxiliary quantum dot ink, quantum dot ink and auxiliary quantum dot ink
The other components being formulated in addition to quantum dot can be with identical or different, and those skilled in the art can adjust as needed.Need
It is explained that the general feelings of quantum dot ink of the quantum dot ink and luminescence generated by light used in luminescent layer in EL structure
It is different under condition, typically not comprising curable resin.
In addition, the thickness of light conversion layer or auxiliary light conversion layer can be according to the quantum dot concentration and hair in quantum dot ink
The luminescent spectrum of optical device is adjusted, it is preferred that light conversion layer or thickness≤50 μm for aiding in light conversion layer, is more highly preferred to
, light conversion layer or thickness≤10 μm for aiding in light conversion layer so that luminescent device is thinner.
In the another embodiment of the application, above-mentioned steps S21' includes：Step S211', at least one above-mentioned sub- picture
In plain region, protective layer is set on the surface away from corresponding above-mentioned luminescent layer of above-mentioned second electrode；Step S212', is adopted
Auxiliary quantum dot is set on the surface away from corresponding above-mentioned second electrode 30 of each above-mentioned protective layer 40 with ink-jet printing process
Ink, and auxiliary light conversion layer 50 is formed by curing, form structure as shown in Figure 4.
Above-mentioned protective layer can include one or more layers, and the setting of protective layer and preparation method can be with step S211 '
The setting of protective layer in above-mentioned steps S21 is consistent with preparation method.
In the another embodiment of the application, above-mentioned light conversion layer or auxiliary light conversion layer include the tree of UV curable
Fat, present inventor are had found because quantum dot can absorb ultraviolet light in itself, so that light conversion layer or fill-in light conversion
Layer solidification is slow.
Solidification can be common ultraviolet light or visible ray, or heat cure, or beam energy solidifies,
It is specifically closely related using any mode and the material in specific quantum dot ink.
In a kind of embodiment of the application, have preferably using laser or beam energy solidify above-mentioned quantum dot ink with
Quantum dot ink is aided in, solidification process can be accelerated.
Wherein, the laser of laser such as ultraviolet laser wave band, visible light wave range laser or infrared band, works as use
During the laser curing quantum dot ink of visible light wave range and infrared band, it is possible to reduce ultraviolet light is by the absorption of quantum dot.
In the typical embodiment of another kind of the application, there is provided a kind of luminescent device, as shown in figure 1, the photophore
Part includes substrate 11 and EL structure, and first electrode 12 and multiple pixel isolation structures 01 are provided with aforesaid substrate 11,
There is subpixel area, above-mentioned EL structure includes above-mentioned first electrode between adjacent above-mentioned pixel isolation structure 01
12nd, the luminescent layer 20 and second electrode 30 of above-mentioned subpixel area, and above-mentioned luminescent layer 20 and above-mentioned second electrode 30 are arranged on
Set successively away from aforesaid substrate 11, above-mentioned luminescent device also includes at least one light conversion layer 60, each above-mentioned light conversion layer 60
It is arranged on surface of the above-mentioned second electrode 30 of each above-mentioned EL structure away from corresponding above-mentioned luminescent layer 20.
Light conversion layer in the luminescent device is set directly on the surface of second electrode, simple in construction, and cost is relatively low, more
It is adapted to be extended to market.
In another embodiment of the application, luminescent device includes multiple EL structures, these electroluminescent knots
Structure includes the first electro-luminescent zones, the second electro-luminescent zones and the 3rd electro-luminescent zones；Above-mentioned multiple light conversion layers include first
Light conversion layer and the second light conversion layer, wherein, above-mentioned first light conversion layer is located at above-mentioned the second of above-mentioned first electro-luminescent zones
Surface of the electrode away from above-mentioned luminescent layer, above-mentioned second light conversion layer are located at the above-mentioned second electrode of above-mentioned second electro-luminescent zones
Surface away from above-mentioned luminescent layer；Above-mentioned first light conversion layer forms the first sub-pixel area with corresponding above-mentioned EL structure
Domain, above-mentioned second light conversion layer form the second subpixel area, the 3rd electro-luminescent zones with corresponding above-mentioned EL structure
Corresponding EL structure is the 3rd subpixel area.
The second electrode lay is caused to damage in order to avoid preparing the process of light conversion layer using ink-jet method, or avoids light from turning
The molecule infiltration of conversion materials enters second electrode, as shown in Fig. 2 the preferably above-mentioned luminescent device of the application includes at least one protection
Layer 40, each above-mentioned protective layer 40 is arranged on the above-mentioned second electrode 30 of each above-mentioned EL structure and corresponding (same height
In pixel, i.e., contact what is set with the protective layer) between above-mentioned light conversion layer 60.
In a kind of embodiment of the application, the light transmittance of each above-mentioned protective layer is more than or equal to 70%.So can be further
Avoid protective layer from impacting light path, and then be further ensured that the light emission rate of luminescent device.
In order to improve the luminous efficiency of luminescent device, as shown in Figure 3 and Figure 4, the preferably above-mentioned luminescent device of the application also wraps
At least one auxiliary light conversion layer 50 is included, it is each to aid in light conversion layer 50 to be arranged on each above-mentioned second electrode 30 and corresponding above-mentioned light
Between conversion layer 60；The emission wavelength of above-mentioned auxiliary light conversion layer 50 is more than the emission wavelength of corresponding above-mentioned luminescent layer, and small
In the emission wavelength of corresponding above-mentioned light conversion layer 60.
When luminescent device includes protective layer, auxiliary light conversion layer is arranged on the surface of the remote second electrode of protective layer
On, and light conversion layer is arranged on the surface of the remote protective layer of auxiliary light conversion layer, specific structure is as shown in Figure 4.
Due to the 3rd electro-luminescent zones do not need light conversion, therefore, also just without set auxiliary light conversion layer, as Fig. 3 with
Shown in Fig. 4.
In another embodiment of the application, each above-mentioned luminescent layer is quantum dot light emitting layer or organic luminous layer.Ability
Field technique personnel can select suitable luminescent layer according to actual conditions.
The emission wavelength of the luminescent layer of EL structure is less than or equal to 480nm, i.e., what luminescent layer was sent can be purple
Light or blue light, those skilled in the art can select suitable luminescent layer as the case may be, and then make light conversion layer
Can be stimulated the light of luminous predetermined wavelength.
In a kind of embodiment of the application, in above-mentioned multiple light conversion layers, part light conversion layer is red quantum dot layer, separately
A part of light conversion layer is green quantum dot layer.
In another embodiment of the application, the emission wavelength of red quantum dot layer is between 600~680nm.It is another
In embodiment, the emission wavelength of green quantum dot layer is between 510~560nm.
In the another embodiment of the application, as shown in figure 5, being provided with light between protective layer 40 in light conversion layer 60
Extract layer 45, light-extraction layer can have one layer or multilayer, also, the layer is used to strengthen light emission rate.Light-extraction layer can be scattered
Penetrate the mixed layer of nano-particle and organic matter.Scatter nano-particle be selected from titan oxide particles, tantalum oxide particles, niobium oxide particle,
Zirconia particles, alumina particle, tungsten oxide particles, antimony oxide particle, vanadium oxide particle, molybdenum oxide particle, silicon oxide particle,
Chrome oxide particle, ferric oxide particles, copper oxide particle, particles of lead oxide, yttria particles, manganese oxide particle, granules of stannic oxide,
Zinc oxide particles, vulcanized lead particle, zns particle, cadmium sulfide particle, zinc telluridse particle and cadmium selenide particle are one or more.
Organic matter may be selected from polyester acrylate, urethane acrylate, polyacrylate, epoxy acrylate, polyether acrylate
With the one or more in the material such as second cyanurate.The mixed layer for scattering nano-particle and organic matter can be by spin coating, spray
It is prepared by painting, slot coated, inkjet printing, silk-screen printing.
When luminescent device includes aiding in light conversion layer, light-extraction layer be arranged on protective layer and fill-in light dress change layer it
Between.
In addition, it is necessary to which explanation is a bit, in Fig. 1 in the application to Fig. 5 luminescent device, simplify the knot of luminescent device
Structure, the surface of the remote luminescent layer of the second electrode of the 3rd electro-luminescent zones are not provided with any structure sheaf, but this not generation
The surface of the remote luminescent layer of the second electrode of the electro-luminescent zones of table the 3rd is necessarily not provided with any structure sheaf, in fact, the 3rd
The surface of the remote luminescent layer of the second electrode of electro-luminescent zones can print optical clear resin (OCR Optical Clear
Resin) layer, OCR layers can use ultra-violet curing.
In order that the technical scheme of the application can be more clearly understood by obtaining those skilled in the art, below with reference to tool
The embodiment of body illustrates the technical scheme of the application.
Embodiment 1
The forming process of luminescent device is specially：
Step S1, prepare to be provided with the substrate of ITO electrode (first electrode), and multiple pixel isolations are provided with the substrate
Structure, poly- (3, the 4- ethylene dioxy thiophenes of inkjet printing on the surface of exposed ITO electrode between adjacent pixel isolation structure
Fen)-polystyrolsulfon acid (PEDOT:PSS) solution, hole injection layer is used as after drying, prints polyvinylcarbazole (PVK) solution
Onto hole injection layer, hole transmission layer is used as after drying, inkjet printing emission wavelength is the positive last of the ten Heavenly stems of 465nm blue quantum dot
On alkane ink to hole transmission layer, luminescent layer is used as after n-decane volatile dry, inkjet printing zinc oxide (ZnO) solution is to luminous
On layer, electric transmission and implanted layer be used as after drying, is deposited second electrode, second electrode is the Ag of 20nm thickness, second electrode
To go out optoelectronic pole；Public first electrode, multiple hole injection layers, multiple hole transmission layers, multiple luminescent layers and multiple second
Electrode forms multiple EL structures, multiple EL structures be divided into the first electro-luminescent zones, the second electro-luminescent zones with
3rd electro-luminescent zones.Electroluminescent external quantum efficiency is obtained as 6.2%.
Step S2, set using ink-jet printing process on the surface of the remote luminescent layer of the second electrode of the first electro-luminescent zones
The ink of red quantum dot is put, ultraviolet laser solidification forms red quantum dot layer, and the emission wavelength of the red quantum dot is
600nm, green quantum dot ink is set on the surface of the remote luminescent layer of the second electrode of the second electro-luminescent zones, it is ultraviolet to swash
Photocuring forms green quantum dot layer, and the emission wavelength of the green quantum dot is 560nm, wherein, red quantum dot layer with it is corresponding
EL structure form the first sub-pixel (i.e. red sub-pixel) region, green quantum dot layer and corresponding electroluminescent knot
The second sub-pixel (i.e. green sub-pixels) region is configured to, the 3rd EL structure corresponding to the 3rd electro-luminescent zones is the 3rd
Sub-pixel (i.e. blue subpixels) region, form the structure shown in Fig. 1.The photoluminescence efficiency for obtaining red subpixel areas is
38%, the photoluminescence efficiency of green subpixel areas is 30%.
Embodiment 2
Step S1 concrete technology is identical with embodiment 1, in step s 2, in the remote luminescent layer of each second electrode
Surface sets silicon oxide layer using sputtering method, protective layer is formed, then, in the remote of each protective layer corresponding to the first electro-luminescent zones
From inkjet printing red quantum dot ink on the surface of second electrode, red quantum dot layer is formed after ultraviolet laser solidification, the
Inkjet printing green quantum dot ink on the surface of the remote second electrode of each protective layer corresponding to two electro-luminescent zones, it is ultraviolet to swash
Green quantum dot layer is formed after photocuring, and then surface is provided with the EL structure of red quantum dot layer and corresponding red
Quantum dot layer forms the first sub-pixel (i.e. red sub-pixel) region, and then surface is provided with the electroluminescent of green quantum dot layer
Structure and corresponding green quantum dot layer form the second sub-pixel (i.e. green sub-pixels) region, corresponding to the 3rd electro-luminescent zones
EL structure is the 3rd sub-pixel (i.e. blue subpixels) region.
Wherein, the light transmittance of protective layer is 90%.The material and reality of specific red quantum dot layer and green quantum dot layer
Apply the identical of example 1.The photoluminescence efficiency for obtaining red subpixel areas is 41%, and the luminescence generated by light of green subpixel areas is imitated
Rate is 33%.
Embodiment 3
Difference with embodiment 2 is, after formation protective layer in step s 2, in the remote second electrode of protective layer
Inkjet printing aids in quantum dot ink on surface, and auxiliary light conversion layer is formed after ultraviolet laser solidification, is aided in quantum dot ink
The emission wavelength of quantum dot be 500nm；Then, using ink-jet printing process on the surface of the remote protective layer of auxiliary light conversion layer
Upper setting red quantum dot layer or green quantum dot layer.The photoluminescence efficiency for obtaining red subpixel areas is 51%, green
The photoluminescence efficiency in sub-pixels region is 38%.
Embodiment 4
Difference with embodiment 2 is, in step s 2, is used on the surface of the remote second electrode of institute's matcoveredn
Slot coated method is coated with the light-extraction layer of titanium oxide scatter particle and epoxy acrylate mixing, using ink-jet printing process in each light
Red quantum dot layer or green quantum dot layer are printed on the surface away from corresponding protective layer of extract layer.Obtain red sub- picture
The photoluminescence efficiency in plain region is 46%, and the photoluminescence efficiency of green subpixel areas is 37%.
Embodiment 5
Difference with embodiment 4 is, after formation light-extraction layer in step s 2, in light-extraction layer away from protective layer
Inkjet printing aids in quantum dot ink on surface, and auxiliary light conversion layer is formed after electronic beam curing, is aided in quantum dot ink
The emission wavelength of quantum dot is 500nm；Then, using ink-jet printing process in each light extraction away from corresponding to for aiding in light conversion layer
Red quantum dot layer or green quantum dot layer are printed on the surface of layer.The photoluminescence efficiency for obtaining red subpixel areas is
57%, the photoluminescence efficiency of green subpixel areas is 42%.
Embodiment 6
Difference with embodiment 5 is that in step s 2, protective layer includes the first protective layer and the second protective layer, each
The surface of the remote luminescent layer of second electrode sets aluminum fluoride using vapour deposition method, the first protective layer is formed, in first protective layer
The surface sputtering method of remote luminescent layer zinc oxide film is set, form the second protective layer.Obtain the photic of red subpixel areas
Luminous efficiency is 56%, and the photoluminescence efficiency of green subpixel areas is 42%.
Above-mentioned is that the external quantum efficiency method of testing of embodiment is：The PR670 produced using PHOTO RESEARCH companies
Spectral luminosity/colourity/radiancy meter, it is 2mA/cm in current density2Under conditions of, outside the luminescent device of testing example 1
Quantum efficiency (EQE), external quantum efficiency is bigger, and the luminance of luminescent device is higher.
The photoluminescence efficiency method of testing of the subpixel area of above-described embodiment is：Blueness is tested respectively using integrating sphere
Backlight spectra and the spectrum through light conversion layer, quantum dot photoluminescence efficiency is calculated using the integral area of spectrogram.Red son
The photoluminescence efficiency of pixel region=red quantum dot absorption peak area/(Blue backlight peak area-pass through quantum dot composite wood
Expect unabsorbed blue peak area) × 100%；The photoluminescence efficiency of green subpixel areas=green quantum dot absworption peak
Area/(Blue backlight peak area-pass through the unabsorbed blue peak area of quantum dot composite material) × 100%.
It can be seen from the test data of embodiment embodiment 1 to the red subpixel areas of embodiment 6 luminescence generated by light
Efficiency is higher with the photoluminescence efficiency of green subpixel areas, and compared with Example 1, the luminescent device of embodiment 2 exists
Protective layer is provided between second electrode and light conversion layer so that the photoluminescence efficiency of red subpixel areas is and green is sub
Pixel region photoluminescence efficiency further improves；Compared with Example 2, the ray structure of embodiment 3 turns in protective layer and light
Change between layer and be provided with auxiliary light conversion layer so that the photoluminescence efficiency of red subpixel areas is and green subpixel areas
Photoluminescence efficiency further walk raising；Embodiment 4 compared with Example 2, is provided with light between protective layer and light conversion layer
Extract layer so that the photoluminescence efficiency of red subpixel areas be with the photoluminescence efficiency of green subpixel areas compared with
It is high；Embodiment 5 compared with Example 4, is provided with auxiliary light conversion layer between light-extraction layer and light conversion layer so that red son
The photoluminescence efficiency of pixel region is the photoluminescence efficiency highest with green subpixel areas；Embodiment 6 and the phase of embodiment 5
Than on the second electrode there is provided the protective layer of multilayer, the setting of the protective layer has substantially no effect on the light of red subpixel areas
The photoluminescence efficiency of photoluminescence efficiency and green subpixel areas.
As can be seen from the above description, the application the above embodiments realize following technique effect：
1), the preparation method of the application, light conversion layer is formed on optoelectronic pole is gone out by the way of inkjet printing, is avoided
Using caused by photoetching process the problem of waste of material；Also, the preparation method simplifies subpixel area forming process, Jin Erjian
Change the preparation process of photophore, reduce production cost.
2), the light conversion layer in the luminescent device of the application is set directly on the surface of second electrode, simple in construction, into
This is relatively low, is more suitable for being extended to market.
The preferred embodiment of the application is above are only above, is not limited to the application, for the skill of this area
For art personnel, the application can have various modifications and variations.It is all within spirit herein and principle, made any repair
Change, equivalent substitution, improvement etc., should be included within the protection domain of the application.
Claims (18)
1. a kind of preparation method of luminescent device, it is characterised in that the preparation method includes：
Step S1, there is provided substrate, multiple pixel isolation structures and the first electrode of EL structure are provided with the substrate,
There is subpixel area between the adjacent pixel isolation structure, the electroluminescent is set in each subpixel area
The luminescent layer and second electrode of structure, wherein, the luminescent layer and the second electrode are set away from the substrate successively, described
Second electrode is optoelectronic pole；And
Step S2, using ink-jet printing process on the surface away from the corresponding luminescent layer of at least one second electrode
Quantum dot ink is set, and is formed by curing at least one light conversion layer.
2. preparation method according to claim 1, it is characterised in that the step S1 also includes：
In at least one subpixel area, hole injection layer is set between the first electrode and the luminescent layer
And/or hole transmission layer.
3. preparation method according to claim 1, it is characterised in that the step S1 also includes：
In at least one subpixel area, electronics is set to note between the luminescent layer and the corresponding second electrode
Enter layer and/or electron transfer layer.
4. preparation method according to claim 1, it is characterised in that the step S2 includes：
Step S21, at least one subpixel area, in the second electrode away from the corresponding luminescent layer
Protective layer is set on surface；And
Step S22, institute is set on surface of each protective layer away from the corresponding second electrode using ink-jet printing process
Quantum dot ink is stated, and is formed by curing light conversion layer.
5. preparation method according to claim 4, it is characterised in that set in the step S21 described in one or more
Protective layer, the method to set up of each protective layer are selected from physical vaporous deposition, chemical vapour deposition technique, sputtering method and vapour deposition method
At least one of.
6. preparation method according to claim 5, it is characterised in that the step S21 includes：
In at least one subpixel area, adopted on the surface away from the corresponding luminescent layer of the second electrode
The first protective layer is formed with the vapour deposition method, the material of first protective layer is aluminum fluoride and/or 8-hydroxyquinoline aluminium；
The second protective layer is formed using the sputtering method on the surface of the remote luminescent layer of first protective layer, it is described
The material of second protective layer is zinc oxide.
7. preparation method according to claim 1, it is characterised in that the step S2 also includes：
Step S21', at least one subpixel area, using ink-jet printing process in the remote right of the second electrode
Auxiliary quantum dot ink is set on the surface for the luminescent layer answered, and is formed by curing auxiliary light conversion layer；And
Step S22', using ink-jet printing process on the surface away from the corresponding second electrode of each auxiliary light conversion layer
Upper setting quantum dot ink, and it is formed by curing light conversion layer.
8. preparation method according to claim 7, it is characterised in that the step S21' includes：
Step S211', at least one subpixel area, in the second electrode away from the corresponding luminescent layer
Surface on protective layer is set；And
Step S212', set using ink-jet printing process on the surface away from the corresponding second electrode of each protective layer
Auxiliary quantum dot ink is put, and is formed by curing auxiliary light conversion layer.
9. preparation method according to claim 4, it is characterised in that the material of the protective layer be silica, silicon nitride,
Aluminum oxide, zinc oxide, barium monoxide, barium titanate, boron oxide, cerium oxide, cobalt oxide, germanium oxide, hafnium oxide, indium oxide, magnalium point
Spar, magnesia, manganese oxide, nickel oxide, niobium oxide, three two girls of oxidation, tantalum oxide, strontium oxide strontia, titanium oxide, titanium nitride, oxidation
Yttrium, zirconium oxide, aluminum fluoride, barium fluoride, fluorination bismuth, magnesium fluoride, cerium fluoride, fluorination terbium, yttrium fluoride, zinc fluoride, molybdenum oxide, selenizing
One or more in bismuth, bismuth antimonide, zinc selenide, zinc sulphide, zinc antimonide, stannic selenide, artificial gold and antimony tin, or the guarantor
The material of sheath is polyether sulfone, polyacrylic acid, polyarylate, PEI, PEN, poly terephthalic acid
Second diester, polyphenylene sulfide, polyimides, in makrolon, cellulose acetate, 8-hydroxyquinoline aluminium and cellulose acetate propionate
It is one or more.
10. preparation method according to any one of claim 1 to 9, it is characterised in that in the step S2, using sharp
Light or beam energy solidify the quantum dot ink.
11. a kind of luminescent device, including substrate (11) and EL structure, first electrode is provided with the substrate (11)
(12) and multiple pixel isolation structures (01), there is subpixel area between the adjacent pixel isolation structure (01), it is described
EL structure includes the first electrode (12), is arranged on the luminescent layer (20) and second electrode of the subpixel area
(30), and the luminescent layer (20) and the second electrode (30) are set away from the substrate (11) successively, it is characterised in that institute
Stating luminescent device also includes：
At least one light conversion layer (60), each light conversion layer (60) set the second electrode (30) away from corresponding described
On the surface of luminescent layer (20).
12. luminescent device according to claim 11, it is characterised in that the luminescent device also includes：
At least one protective layer (40), each protective layer (40) are arranged on each second electrode (30) and the corresponding light
Between conversion layer (60).
13. luminescent device according to claim 12, it is characterised in that the light transmittance of each protective layer (40) be more than etc.
In 70%.
14. luminescent device according to claim 12, it is characterised in that the material of each protective layer (40) is oxidation
Silicon, silicon nitride, aluminum oxide, zinc oxide, barium monoxide, barium titanate, boron oxide, cerium oxide, cobalt oxide, germanium oxide, hafnium oxide, oxidation
Indium, magnesium aluminate spinel, magnesia, manganese oxide, nickel oxide, niobium oxide, three two girls of oxidation, tantalum oxide, strontium oxide strontia, titanium oxide, nitrogen
Change titanium, yittrium oxide, zirconium oxide, aluminum fluoride, barium fluoride, fluorination bismuth, magnesium fluoride, cerium fluoride, fluorination terbium, yttrium fluoride, zinc fluoride, oxygen
Change the one or more in molybdenum, bismuth selenide, bismuth antimonide, zinc selenide, zinc sulphide, zinc antimonide, stannic selenide, artificial gold and antimony tin,
Or the material of the protective layer (40) is polyether sulfone, polyacrylic acid, polyarylate, PEI, poly- naphthalenedicarboxylic acid ethylene glycol
Ester, PET, polyphenylene sulfide, polyimides, makrolon, cellulose acetate, 8-hydroxyquinoline aluminium and vinegar
One or more in sour cellulose propionate.
15. the luminescent device according to claim 11 or 12, it is characterised in that the luminescent device also includes：
It is at least one auxiliary light conversion layer (50), it is each it is described auxiliary light conversion layer (50) be arranged on each second electrode (30) with
Between the corresponding light conversion layer (60)；The emission wavelength of each auxiliary light conversion layer (50) is more than corresponding described luminous
The emission wavelength of layer (20), and less than the emission wavelength of the corresponding light conversion layer (60).
16. the luminescent device according to claim 11 or 12, it is characterised in that each luminescent layer (20) is sent out for quantum dot
Photosphere or organic luminous layer, and the emission wavelength of each luminescent layer (20) is less than or equal to 480nm.
17. luminescent device according to claim 16, it is characterised in that in the light conversion layer (60), part it is described
Light conversion layer (60) is red quantum dot layer, and the light conversion layer (60) of another part is green quantum dot layer.
18. luminescent device according to claim 12, it is characterised in that the luminescent device also includes：
At least one light-extraction layer (45), each light-extraction layer (45) are arranged on each light conversion layer (60) and corresponding institute
State between protective layer (40).
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108103435A (en) * | 2017-12-14 | 2018-06-01 | 武汉华星光电半导体显示技术有限公司 | Electrode plate and its surface treatment method |
| CN108832016A (en) * | 2018-06-04 | 2018-11-16 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and display device |
| CN112363344A (en) * | 2020-11-06 | 2021-02-12 | 京东方科技集团股份有限公司 | Display substrate and display panel |
| CN112802976A (en) * | 2021-01-05 | 2021-05-14 | 京东方科技集团股份有限公司 | Quantum dot light-emitting device, manufacturing method thereof and display device |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109841647A (en) * | 2017-11-24 | 2019-06-04 | 上海和辉光电有限公司 | A kind of OLED display module and display |
| CN110264877B (en) * | 2018-03-12 | 2022-01-11 | 深圳光峰科技股份有限公司 | Pixelated wavelength conversion device, pixelized wavelength conversion element, and method for manufacturing same |
| CN109061941B (en) * | 2018-08-07 | 2022-01-18 | 京东方科技集团股份有限公司 | Quantum dot film, preparation method thereof, backlight module and display device |
| US11552228B2 (en) * | 2018-08-17 | 2023-01-10 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for producing an optoelectronic component |
| CN109887978B (en) * | 2019-03-12 | 2021-01-12 | 京东方科技集团股份有限公司 | Display substrate, manufacturing method thereof and display device |
| CN110246990A (en) * | 2019-06-27 | 2019-09-17 | 广东普加福光电科技有限公司 | A method of improving inkjet printing quantum dot layer to blue light absorption |
| CN112216774A (en) * | 2019-07-11 | 2021-01-12 | 成都辰显光电有限公司 | Color conversion assembly, display panel and manufacturing method |
| CN112420895B (en) * | 2020-11-09 | 2022-01-28 | 深圳市华星光电半导体显示技术有限公司 | QD-miniLED light-emitting device manufacturing method and QD-miniLED light-emitting device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070089784A1 (en) * | 2005-10-26 | 2007-04-26 | Noh Chang H | Solar cell-driven display device and method of manufacturing thereof |
| CN104932136A (en) * | 2015-07-01 | 2015-09-23 | 合肥鑫晟光电科技有限公司 | Colored film substrate and manufacturing method thereof, display panel and display device |
| CN105161513A (en) * | 2015-08-03 | 2015-12-16 | 京东方科技集团股份有限公司 | OLED display device, manufacturing method thereof, color film substrate and manufacturing method thereof |
| CN105153807A (en) * | 2015-07-21 | 2015-12-16 | 京东方科技集团股份有限公司 | Quantum dot ink |
| CN105353555A (en) * | 2015-12-08 | 2016-02-24 | 深圳市华星光电技术有限公司 | Manufacturing method of quantum dot color film substrate |
| CN105789484A (en) * | 2016-03-09 | 2016-07-20 | 纳晶科技股份有限公司 | Light-emitting device and manufacturing method thereof |
-
2016
- 2016-08-03 CN CN201610628415.2A patent/CN106206871A/en active Pending
-
2017
- 2017-07-31 CN CN201710640453.4A patent/CN107403880B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070089784A1 (en) * | 2005-10-26 | 2007-04-26 | Noh Chang H | Solar cell-driven display device and method of manufacturing thereof |
| CN104932136A (en) * | 2015-07-01 | 2015-09-23 | 合肥鑫晟光电科技有限公司 | Colored film substrate and manufacturing method thereof, display panel and display device |
| CN105153807A (en) * | 2015-07-21 | 2015-12-16 | 京东方科技集团股份有限公司 | Quantum dot ink |
| CN105161513A (en) * | 2015-08-03 | 2015-12-16 | 京东方科技集团股份有限公司 | OLED display device, manufacturing method thereof, color film substrate and manufacturing method thereof |
| CN105353555A (en) * | 2015-12-08 | 2016-02-24 | 深圳市华星光电技术有限公司 | Manufacturing method of quantum dot color film substrate |
| CN105789484A (en) * | 2016-03-09 | 2016-07-20 | 纳晶科技股份有限公司 | Light-emitting device and manufacturing method thereof |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108103435A (en) * | 2017-12-14 | 2018-06-01 | 武汉华星光电半导体显示技术有限公司 | Electrode plate and its surface treatment method |
| CN108832016A (en) * | 2018-06-04 | 2018-11-16 | 武汉华星光电半导体显示技术有限公司 | A kind of OLED display panel and display device |
| CN112363344A (en) * | 2020-11-06 | 2021-02-12 | 京东方科技集团股份有限公司 | Display substrate and display panel |
| CN112363344B (en) * | 2020-11-06 | 2022-10-25 | 京东方科技集团股份有限公司 | Display substrate and display panel |
| CN112802976A (en) * | 2021-01-05 | 2021-05-14 | 京东方科技集团股份有限公司 | Quantum dot light-emitting device, manufacturing method thereof and display device |
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| Publication number | Publication date |
|---|---|
| CN106206871A (en) | 2016-12-07 |
| CN107403880B (en) | 2019-12-06 |
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