CN107403723A - A kind of method for improving etch critical dimension stability - Google Patents
A kind of method for improving etch critical dimension stability Download PDFInfo
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- CN107403723A CN107403723A CN201710471711.0A CN201710471711A CN107403723A CN 107403723 A CN107403723 A CN 107403723A CN 201710471711 A CN201710471711 A CN 201710471711A CN 107403723 A CN107403723 A CN 107403723A
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- 238000005530 etching Methods 0.000 claims abstract description 144
- 238000001637 plasma atomic emission spectroscopy Methods 0.000 claims abstract description 44
- 230000008569 process Effects 0.000 claims abstract description 21
- 238000001020 plasma etching Methods 0.000 claims abstract description 10
- 238000004458 analytical method Methods 0.000 claims abstract description 9
- 238000001228 spectrum Methods 0.000 claims description 14
- 230000003595 spectral effect Effects 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 11
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- 230000007613 environmental effect Effects 0.000 abstract description 9
- 238000010835 comparative analysis Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 36
- 210000002381 plasma Anatomy 0.000 description 27
- 239000000047 product Substances 0.000 description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 15
- 229920005591 polysilicon Polymers 0.000 description 13
- 238000012423 maintenance Methods 0.000 description 7
- 238000004088 simulation Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The invention discloses a kind of method for improving etch critical dimension stability, comprise the following steps：Wafer is provided, and carries out plasma etching；Gather the actual plasma emission spectroscopy curve in etching process；The actual plasma emission spectroscopy curve collected is compared with a standard curve, the drift situation of discriminatory analysis plasma etch chamber；Drift situation with reference to actual plasma emission spectroscopy curve relative to the standard curve, analyze and adjust the technological parameter of etching formula；The wafer of subsequent batches is performed etching according to adjusted technological parameter.The present invention by comparative analysis actual acquisition to plasma emission spectroscopy curve and standard curve to judge to etch the drift situation of environment, and regulation compensation etches the technological parameter of formula accordingly, the etching operation of subsequent wafer is carried out again, avoid the stability for because of the skew for the etch critical dimension that etching environmental drift is brought, improving etching technics critical size.
Description
Technical field
The present invention relates to the etching technics field of semiconductor manufacturing, and it is stable to improve etch critical dimension more particularly, to one kind
The method of property.
Background technology
Etching technics is one of technique of most critical in ic manufacturing process, and its main function is to complete photoetching process
In final transfer of the figure on silicon chip and sizing, therefore any drift of etching technics can all cause final etched features knot
The drift of structure and line width, influences the stability of etching gained critical size, and then directly influences the electric property of product and good
Rate.
After etching formula is fixed, the drift of etching technics mostlys come from the environmental drift of etching cavity, and partly leads
Drift during body technology is divided into three kinds of mutation drift, gradual drift and interval drift again：Mutation drift occurs mainly in quarter
Lose cavity periodic maintenance before and after, due to during periodic maintenance often all can removable parts capsule components, these parts or more
Or can all have certain otherness less, so as to cause also occur certain mutation drift in etching process；Gradual drift is main
Generation is slowly varying with the generation of etching technics time in etching apparatus control parameter, such as the extent of deterioration of antistatic chuck surface
With corresponding back of the body helium gas flow, constantly there is etch by-products accumulation in etching process in addition in etching cavity inner surface
Gradual drift can be caused；Between interval drift occurs mainly in the different batches wafer of etching technics operation, batch and batch it
Between technique be all intermittent, more or less can also cause etching environment drift.
In the large-scale production process of current semiconductor, the drift phenomenon of environment is etched for monitoring, generally by not
Same film control wafer tests the particulate pollutant of etch rate and etching cavity to simulate etch chamber with corresponding etching formula
The environment of body, compare the situation of change of the particulate pollutant of etch rate and etching cavity before and after test, thus discriminatory analysis is carved
Lose the drift situation of environment.But this method often simply simulates the single membrane structure of prominent product wafer, without having
The figure of body, though the state of etching cavity can be simulated on the whole, the data accuracy of simulation is not very high and can not mould
Intend the etching situation to each step, so it is difficult to the minor variations for capturing etching cavity environment.Therefore, it is badly in need of a kind of precision
Method that is higher and etching cavity environmental stability being monitored in real time.
The content of the invention
It is an object of the invention to provide a kind of method for improving etch critical dimension stability, by monitoring in real time, divides
The technological parameter for changing and adjusting etching formula accordingly of etching cavity environment is analysed, to avoid caused by etching cavity environmental drift
The skew of wafer critical size, while improve the electric property of product and improve product yield.
In order to achieve the above object, the invention provides a kind of method for improving etch critical dimension stability, including with
Lower step：
Wafer is provided, and carries out plasma etching；
Gather the actual plasma emission spectroscopy curve in etching process；
The actual plasma emission spectroscopy curve collected is compared with a standard curve, discriminatory analysis plasma
The drift situation of body etching cavity；
Drift situation with reference to actual plasma emission spectroscopy curve relative to the standard curve, analyze and adjust quarter
Lose the technological parameter of formula；
The wafer of subsequent batches is performed etching according to adjusted technological parameter.
Optionally, a hole is offered in the side wall of plasma etch chamber, a spectra collection equipment is connect by optical fiber
Enter the collection that the hole carries out plasma emission spectroscopy curve.
Optionally, the spectra collection equipment is grating spectrograph, and the grating spectrograph plasma etching produces
Light screened and record light intensity and changed with time.
Optionally, the actual plasma emission spectroscopy curve and the standard curve are in zero-bias etching condition
Lower collection.
Further, the actual plasma emission spectroscopy curve and the standard curve are dielectric layer to be etched
With the characteristic spectrum curve of plasma reaction gained etch product.
Further, after every etching 1-10 batch wafers, after plasma etch chamber is safeguarded and find
The critical size drift degree of wafer carries out the collection of the actual plasma emission spectroscopy curve after threshold value.
Further, the standard curve is in the etching formula under stable state for plasma etch chamber and corresponded to
Plasma emission spectroscopy curve.
Further, drift situation of the actual plasma emission spectroscopy curve relative to the standard curve is analyzed
When, compare the difference of two slope of a curves and intensity on fixed etch period point.
Further, when the actual plasma emission spectroscopy curve drifts in license relative to the standard curve
In the range of when, without adjust it is described etching formula technological parameter；When the actual plasma emission spectroscopy curve relative to
When the drift of the standard curve exceeds tolerance band, the technological parameter of the etching formula is adjusted；When the actual plasma
When body spectral radiation curves trigger warning line relative to the drift of the standard curve, shut down and whole etching system is examined
Look into.
Further, the technological parameter of the etching formula includes etch rate and etch period.
The present invention collection etching process in actual plasma emission spectroscopy curve, and with the mark under stable state
Quasi- spectral radiation curves are compared, and analytical estimating goes out the environmental drift degree of plasma etch chamber, and adjustment is carved accordingly
The technological parameter of erosion formula performs etching compensation so that the critical size of subsequent wafer etching gained reaches predetermined target value, can
Avoid because etch environment drift and caused by etch critical dimension skew, so as to improve etching products obtained therefrom critical size
Stability, improve the electric property of product, and improve product yield.
Brief description of the drawings
Fig. 1 is the plasma emission spectroscopy curve that the present invention collects under a certain etching condition；
Fig. 2 is the etching device schematic diagram of the embodiment of the present invention；
Fig. 3 is the etch rate variations figure tested in the embodiment of the present invention before and after certain maintenance by conventional films control wafer；
Fig. 4 is that certain in the embodiment of the present invention safeguards that the front and rear etch product measured by plasma emission spectroscopy curve is sent out
Penetrate light intensity (etch product generating rate) variation diagram of light；
Fig. 5 is the schematic flow sheet that the present invention improves etch critical dimension stability approach；
In figure, 1- plasma etch chambers, 2- electrostatic chucks, 3- wafers, 4- holes, 5- optical fiber, 6- spectra collection equipment.
Embodiment
The embodiment of the present invention is described in more detail below in conjunction with schematic diagram.According to description below and
Claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and
Using non-accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Study and find through inventor, in semiconductor plasma etching technics, be commonly used to judge film etching terminal
Plasma light emission spectrum (Optical Emission Spectrum, abbreviation OES) curve is except that can play endpoint monitoring work(
Can be outer, handling situations of the feedback wafer in etching cavity can also be monitored in real time, as shown in Figure 1 under a certain etching condition
Plasma emission spectroscopy curve, the situation of each etch step is therefrom can be clearly seen that, there is figure auxiliary, carved to whole
Detection, the simulation of erosion process are more accurate, can effectively make up sensitiveness deficiency problem when etching cavity environment is simulated with control wafer,
And etching difference caused by etching cavity environmental drift is avoided in time.
Based on this, the invention provides a kind of method for improving etching etch critical dimension stability, as shown in figure 5, should
Method comprises the following steps：
Step 1: providing wafer, and carry out plasma etching；
Step 2: the actual plasma emission spectroscopy curve in collection etching process；
Step 3: the actual plasma emission spectroscopy curve collected is compared with a standard curve, judge to divide
Analyse the drift situation of plasma etch chamber；
Step 4: with reference to actual plasma emission spectroscopy curve relative to the drift situation of the standard curve, analysis
And adjust the technological parameter of etching formula；
Step 5: the wafer of subsequent batches is performed etching according to adjusted technological parameter.
As shown in Fig. 2 in one embodiment, polysilicon gate is performed etching to change using method proposed by the present invention
The stability of kind etch critical dimension, first prepare before etching what a plasma etch chamber 1, wafer 3 to be etched and
One spectra collection equipment 6.Wherein, wafer 3 is positioned on electrostatic chuck 2, is offered in the side wall of plasma etch chamber 1
One hole 4, spectra collection equipment 6 are connected by an optical fiber 5 with hole 4.
Optionally, spectra collection equipment 6 uses grating spectrograph, when etching wafer 3, in plasma etch chamber 1
Various plasmas and wafer 3 on the dielectric layer that is etched occur when complicated Chemical Physics is reacted can de excitation produce light, light
Grating spectrograph 6 first passes through hole 4 in the side wall of plasma etch chamber 1 and optical fiber 5 collects a series of transmitting of different wave lengths
Light, screened immediately by light caused by grating plasma etching de excitation, recycle photomultiplier to change, amplify,
The intensity for recording light changes with time.
When improving the stability of etch critical dimension using the present invention it may first have to collect one in etching cavity environment
Etching spectral radiation curves under stable state, to be used as the follow-up standard for judging etching environmental stability.Closed to reach
The preset value of key size, according to priori, with reference to etching condition, to various etch process parameters under a certain fixed etching formula
Such as etch rate, etch period are configured adjustment, are applied according still further to the polysilicon on the technological parameter etching wafer 3 of setting
Layer, and examine critical size obtained by actual etching, it is ensured that whole etching technics reaches stable state, i.e., the pass of actual etching gained
Key size and the deviation of critical size preset value can be ignored.When whole etching technics reaches stable state, adopted by spectrum
Collect the plasma emission spectroscopy curve in one etching process of collection of equipment 6 as standard curve.
Further, plasma emission spectroscopy curve gathers under zero-bias etching condition.Under zero bias voltage condition
Energy of plasma is low, and most of plasma can not all strike the depths of etched media layer, and plasma is mainly concentrated
In the inner wall surface of plasma etch chamber 1, more surface masses can be etched, can more accurately reflect etched rings
Border.
Further, plasma emission spectroscopy curve be emitted luminescence intensity in complete etching process with
The change curve of etch period.The etching environment of a certain fixed etching formula so can be intactly monitored, simulate, it is convenient follow-up
Analysis, the etching environmental drift for calculating whole etching formula.
Further, the collection of plasma emission spectroscopy curve is polysilicon layer to be etched and plasma reaction institute
Obtain the characteristic spectrum curve of etch product.In whole etching process, plasma not only can etches polycrystalline silicon coating, can also etch
Organic antireflective coating, the photoresist coating either inwall of plasma etch chamber 1 on polysilicon layer, plasma occur
Light caused by de excitation is more complicated during complicated chemical physical reactions, and wavelength has the plasma emissioning light a variety of, the present invention gathers
Spectral curve is polysilicon layer to be etched and the characteristic spectrum curve of etch product obtained by plasma reaction, and polysilicon layer etches
The light intensity change of product can reflect the generating rate of the etch product, can more accurately simulate, monitor polysilicon layer quilt
The situation of etching.
When improving the stability of etch critical dimension using the present invention, the collection one in real time of spectra collection equipment 6 must be utilized
Spectral radiation curves in individual actual etching process.Optionally, spectral radiation curves are not timing collections, without constantly adopting
Collection, can save part energy；It can be that every etching 1-10 batches of wafers 3 just gather afterwards, but be tieed up in plasma etch chamber 1
Shield must must gather after finishing, and must also be gathered after detection finds that the critical size drift degree of wafer 3 is larger.
, it is necessary to the plasma that comparative analysis actual acquisition arrives when improving the stability of etch critical dimension using the present invention
Spectral radiation curves mainly compare two slope of a curves and intensity relative to the drift situation of the standard curve under stable state
Difference on fixed etch period point, can be integrated (i.e. with the emitted luminescence intensity in whole etching process to etch period
The area for the planar graph that plasma emission spectroscopy curve is formed to time shaft upright projection), quantitative estimation, contrast polycrystalline
The amount of silicon etching product.
When improving the stability of etch critical dimension using the present invention, actual etching gained plasma emission spectroscopy curve
There are following three kinds relative to the drift situation of standard curve:
(1), actual plasma emission spectroscopy curve drifting within tolerance band relative to standard curve, i.e., two
The amount of etching polysilicon product in etching process is more or less the same, without adjusting the technological parameter of fixation etching formula, directly
Carry out the etching operation of subsequent wafer 3；
(2), actual plasma emission spectroscopy curve exceeds tolerance band, i.e., two quarters relative to the drift of standard curve
The amount of etching polysilicon product during erosion has not little deviation, to safeguard the stabilization of the critical size of subsequent etching wafer 3, need to determine
Amount adjusts the technological parameter of fixation etching formula, if the amount of actual etching gained polysilicon product is bigger than normal, can accordingly determine
Amount ground reduces the etch period of whole etching formula or turns the etch rate of whole etching formula down, if actual etching gained
The amount of polysilicon product is less than normal, then accordingly can quantitatively increase the etch period of whole etching formula or tune up whole etching journey
The etch rate of formula；
(3), actual plasma emission spectroscopy curve is guarded against relative to the drift situation of standard curve than more serious, triggering
The amount of etching polysilicon product in line, i.e. two etching processes has very big deviation, it is necessary to shut down at once to whole etching system
System is checked, carries out the etching of subsequent wafer 3 again after whole etching environment adjustment and recovery to stable state.
, it is necessary to enter according to analysis, adjusted technological parameter when improving the stability of etch critical dimension using the present invention
The etching operation of row subsequent batches wafer 3.
During etches polycrystalline silicon gate, when certain plasma etching cavity 1 is safeguarded, tradition is utilized respectively
The plasma emission spectroscopy curve without graphic films control wafer and the present invention detect, simulate the state of environment of etching, then compare
Compared with the drift situation that front and rear etching environment is safeguarded in analysis, and correspondingly the technological parameter of selection adjustment etching formula is subsequently carved
Lose operation.Wherein, as shown in Table 1, the predetermined target value of critical size is 82.0nm before etching polysilicon gate, after etching
Predetermined target value is 68.0nm, and the critical size difference goal-selling of etching process is 14.0nm.
First, etching cavity environment is simulated using the method for traditional no graphic films control wafer test etch rate, such as
Shown in Fig. 3, using the etch rate without figure control wafer test gained, to safeguard that front and rear etch rate is presented as can be seen from Figure
Plateau, gap can ignore that (test rate is within the control line that priori delimited substantially：Between 795 to 865, i.e.,
Think that etching environment is more stable), it can carry out subsequent job without adjusting etch process parameters.Quarter is not adjusted according to the result
Etching technique parameter directly carries out subsequent wafer operation, it is found that a certain degree of drift occurs in the critical size of etching gained wafer,
As shown in Table 1：Critical size drift after etching is larger, and gained critical size is bigger than normal after etching, the reality of critical size after etching
Border decreasing value differs 2.0nm with desired value.
| Critical size | Before etching/nm | After etching/nm | Etch pre-post difference/nm |
| Before maintenance | 82.3 | 67.9 | 14.4 |
| After maintenance | 81.8 | 69.8 | 12.0 |
| Desired value | 82.0 | 68.0 | 14.0 |
Table one
The inventive method is recycled to gather the actual plasma emission spectroscopy curve under zero bias pressure condition, and and stable state
Under standard curve compare, as shown in figure 4, find some fixation etch period points on spectral radiation curves slope and intensity
There is certain change, quantitative analysis entirely etches the spectral radiation curves strength difference change in formula, and integrable calculates
And compare plasma emission spectroscopy curve projection to the planar graph area of time shaft, then correspondingly adjust the quarter of subsequent wafer
Etching technique parameter, according to the technological parameter operation wafer after optimization, obtained critical size and desired value are more identical, such as table
Shown in two：Critical size drift after etching is smaller, and the actual decreasing value of critical size differs only by with desired value after etching
0.2nm。
| Critical size | Before etching/nm | After etching/nm | Etch pre-post difference/nm |
| Before maintenance | 82.3 | 67.9 | 14.4 |
| After maintenance | 82.4 | 68.6 | 13.8 |
| Desired value | 82.0 | 68.0 | 14.0 |
Table two
In summary, in the method for improvement etch critical dimension stability provided in an embodiment of the present invention, utilize etc. from
Daughter spectral radiation curves simulation etching environment, have figure shows, can analyze on fixed etch period point launch light slope and
Intensity is higher to the simulation precision of etching environment；The plasma emission spectroscopy curve arrived by comparative analysis actual acquisition with
Standard curve under stable state, judge the drift situation of estimation etching environment, and compensation is adjusted according to the drift degree of etching environment
The technological parameter of whole etching formula, the etching operation of subsequent wafer is carried out according still further to the technological parameter optimized so that etching
Technology key size reaches predetermined target value, avoids because of the skew for the etch critical dimension that etching environmental drift is brought, improves
The stability of etching technics critical size；The plasma emission spectroscopy curve of the present invention is to etching the simulation precision of environment more
Height, it is also higher to the drift accuracy of detection of etching environment, so as to which convenient more accurately and timely adjusting process parameter performs etching benefit
Repay, not only make it that wafer critical size is more stable, while further improves the yield of product wafer.
The preferred embodiments of the present invention are above are only, any restrictions effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (10)
- A kind of 1. method for improving etch critical dimension stability, it is characterised in that including：Wafer is provided, and carries out plasma etching；Gather the actual plasma emission spectroscopy curve in etching process；The actual plasma emission spectroscopy curve collected is compared with a standard curve, discriminatory analysis plasma is carved Lose the drift situation of cavity；Drift situation with reference to actual plasma emission spectroscopy curve relative to the standard curve, analyze and adjust etching journey The technological parameter of formula；The wafer of subsequent batches is performed etching according to adjusted technological parameter.
- 2. improve the method for etch critical dimension stability as claimed in claim 1, it is characterised in that in plasma etching A hole is offered in the side wall of cavity, a spectra collection equipment carries out plasma emission spectroscopy curve by the intelligent acess hole Collection.
- 3. improve the method for etch critical dimension stability as claimed in claim 2, it is characterised in that the spectra collection is set Standby is grating spectrograph, and light caused by the grating spectrograph plasma etching is screened and records light intensity with the time Change.
- 4. improve the method for etch critical dimension stability as claimed in claim 1, it is characterised in that the actual plasma Body spectral radiation curves gather with the standard curve under zero-bias etching condition.
- 5. the method for the improvement etch critical dimension stability as described in claim 1 or 4, it is characterised in that described reality etc. Ionomer emission spectrum curve is dielectric layer to be etched and etch product obtained by plasma reaction with the standard curve Characteristic spectrum curve.
- 6. improve the method for etch critical dimension stability as claimed in claim 1, it is characterised in that at every etching 1-10 batches After wafer, plasma etch chamber safeguard after and find wafer critical size drift degree beyond threshold value it The collection of the actual plasma emission spectroscopy curve is carried out afterwards.
- 7. the method for the improvement etch critical dimension stability as described in claim 1 or 4, it is characterised in that the standard is bent Line is that plasma etch chamber is under stable state plasma emission spectroscopy curve corresponding to the etching formula.
- 8. improve the method for etch critical dimension stability as claimed in claim 1, it is characterised in that analyze described reality etc. Ionomer emission spectrum curve relative to the standard curve drift situation when, compare two slope of a curves and intensity solid Determine the difference on etch period point.
- 9. improve the method for etch critical dimension stability as claimed in claim 1, it is characterised in that when it is described it is actual wait from Daughter spectral radiation curves are relative to the standard curve when drifting in tolerance band, without adjusting the etching formula Technological parameter；When the actual plasma emission spectroscopy curve exceeds tolerance band relative to the drift of the standard curve When, adjust the technological parameter for etching formula；When the actual plasma emission spectroscopy curve is bent relative to the standard During the drift triggering warning line of line, shut down and whole etching system is checked.
- 10. the method for the improvement etch critical dimension stability as described in claim 1 or 9, it is characterised in that the etching journey The technological parameter of formula includes etch rate and etch period.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113658888A (en) * | 2021-08-16 | 2021-11-16 | 长鑫存储技术有限公司 | Hybrid process control method, device, apparatus and medium |
| CN114582700A (en) * | 2022-03-02 | 2022-06-03 | 北京航空航天大学 | Etching end point detection method and device |
| CN115050644A (en) * | 2022-08-17 | 2022-09-13 | 合肥晶合集成电路股份有限公司 | Wafer etching method and system |
| WO2023004884A1 (en) * | 2021-07-30 | 2023-02-02 | 长鑫存储技术有限公司 | Method for forming capacitor hole |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN113658888B (en) * | 2021-08-16 | 2023-07-14 | 长鑫存储技术有限公司 | Hybrid process control method, apparatus, device and medium |
| CN114582700A (en) * | 2022-03-02 | 2022-06-03 | 北京航空航天大学 | Etching end point detection method and device |
| CN115050644A (en) * | 2022-08-17 | 2022-09-13 | 合肥晶合集成电路股份有限公司 | Wafer etching method and system |
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