CN107394330A - A kind of solid-state circuit waveguide power synthesizer - Google Patents

Abstract

A kind of New Solid circuit wave guide power synthesizer of the invention, belong to millimeter wave Terahertz integrated technology field, particularly a kind of new, broadband, efficient solid-state circuit waveguide power composite structure.The device includes：Rectangular waveguide, subtract high waveguide, back of the body chamber, two transmission line shielding cavities and dielectric substrate；Wherein standard rectangular waveguide, subtract high waveguide, the back of the body chamber and shielding cavity be intercommunication waveguiding structure；Dielectric substrate includes medium substrate and upper surface metal level；Metal level includes two-part structure identical transmission line, impedance matching network and probe；Probe structure is top fluting isosceles triangle.The leading signal transmitted in planar circuit is converted to the spacing wave in waveguide, realizes the space power synthesis of waveguide inner space by the present invention by the form of probe emission.

Description

A kind of solid-state circuit-waveguide power synthesizer

Technical field

The invention belongs to millimeter wave Terahertz integrated technology field, more particularly to a kind of solid-state circuit-waveguide power synthesis Device.

Background technology

Planar circuit is the Two dimensional Distribution parameter between one-dimensional transmission line circuit and the waveguide stereo circuit of three-dimensional Circuit.Its principal mode is microstrip line construction and coplanar waveguide structure.The microwave component of difference in functionality is may be constructed using it, such as Wave filter, oscillator etc..Conventional asymmetric planar circuit and microstrip line input, output circuit is connected, and this circuit is along x, y The size in direction is suitable with the order of magnitude of wavelength, and size h in the z-direction is much smaller than wavelength.Therefore, microstrip line excitation is inputted Electromagnetic field vibrates in the space between center conductor piece and earth plate, and its electric field only has z-component (disregarding fringing field), and magnetic field is put down Go in x/y plane, be TM moulds (for z), and field strength is only x, y function, it is unrelated with z.Further, since the square of air filling Shape waveguide has the advantages that high q-factor and high power capacity, becomes the important transmission line structure of millimeter wave Terahertz frequency range.With The appearance of solid-state millimetric wave device, its relatively low power output capacity annoyings circuit design always and system applies personnel, To obtain more power fan-out capability, corresponding solid-state millimeter wave power synthetic technology is progressively deployed.Age in last century is left The right side, solid-state millimeter wave power is played for the two terminal device of representative with avalanche diode, Gunn diodes (bulk-effect diode) The dominant role of device, corresponding solid-state power combination technology are also concentrated mainly on diode power synthesis field, the conjunction of use Mainly there are following a few class circuit-level synthesis, chip-scale synthesis, the quasi-optical power combing in space and above several types into method Combination.However, for from power combing general principle, these synthetic technologys to be grown up based on two terminal device, recent Stood good in progressively ripe and wide variety of three terminal device power combing, below by classified description.

(1) circuit-level synthesizes

In circuit-level synthesis, the cavity synthesis and the broader disresonance type circuit of bandwidth of operation that mainly have resonant mode are closed Into.The advantages of resonant mode synthesizes is mainly that the power of multiple devices is directly coupled to synthesis in resonator and exported, path loss Small, combined coefficient is high.Its shortcoming is also apparent from combiner circuit Q values height, and working band is narrow；Due to cavity mode of operation reason, ginseng It is restricted with the device count of synthesis.According to the difference of resonant cavity, there are document K.Kurokawa and F.M.Magalhaes,"An X-band 10-watt multiple-IMPATT oscillator,"in Proceedings of the IEEE,vol.59,no.1,pp.102-103,Jan.1971.doi:In 10.1109/PROC.1971.8109 first The rectangular waveguide cavity synthesis of displaying, R.Harp and H.Stover, " Power combining of X-band IMPATT circuit modules,"1973 IEEE International Solid-State Circuits Conference.Digest of Technical Papers,Philadelphia,PA,USA,1973,pp.118- 119.doi:10.1109/ISSCC.1973.1155195 the cylindrical chamber synthesis of rollout.Rectangular waveguide cavity resonant formula is closed It is very successful into the application in millimeter wave frequency band.First, rectangular waveguide cavity delivery outlet and standard waveguide conversion are easy, and cylindricality Cavity input and output are to be coupled to realize by the coaxial probe positioned at cavity center, in addition to being difficult to make in millimeter wave, this knot Structure has also further restricted bandwidth of operation and combined coefficient.Secondly, in the device count restricted problem that may participate in synthesis, cylindricality Cavity is more serious.Cylindrical chamber increases synthesizer quantity by increase cavity diameter, but as cavity diameter increases, Meet that the pattern quantity of boundary condition increases rapidly, required mode of energy is affected, and combined coefficient declines rapidly.Rectangular waveguide Cavity can then keep the height and the width of cavity constant, only increase cavity length to increase synthesizer quantity, comparatively, In such case lower chamber can mode of operation number increase more slow, required mode of energy is influenceed little.Rectangular waveguide Cavity, which synthesizes more successful example, document K.Chang, R.Ebert and C.Sun, " W-band two-diode power Combiner, " mentioned in Electronics Letters, vol.15, no.13, pp.403-405, June 21 1979. Two IMPATT pipes synthesize to obtain 20.5W pulse power and document Kai Chang and R.L.Ebert in 92.4GHz, " W-Band Power Combiner Design,"in IEEE Transactions on Microwave Theory and Four pipes mentioned in Techniques, vol.28, no.4, pp.295-305, Apr 1980. synthesize obtained 40W pulse work( Rate, combined coefficient are higher than 80%.Using this synthetic technology, in 140GHz frequencies above, the pulse close to ten watts can be also obtained Power and 80%-90% combined coefficient such as document Y.C.Ngan, " Two-diode power combining near 140GHz,"in Electronics Letters,vol.15,no.13,pp.376-377,June 21 1979.；Kai Chang,F.Thrower and G.M.Hayashibara,"Millimeter-Wave Silicon IMPATT Sources and Combiners for the 110-260GHz Range,"1981 IEEE MTT-S International Microwave Symposium Digest, Los Angeles, CA, USA, 1981, described in pp.344-346..

Disresonance type circuit synthesizes, and refers to that multiple power cells are synthesized into network by disresonance type combines, and obtains Bigger power output.In disresonance type power combing, if being synthesized to multichannel, it is necessary to be done step-by-step by multistage synthesis network , it is referred to as multistage " tree-like " if only synthesizing network by single-stage when the multiple power sources of the power combing of structure synthesize just reaches mesh Target, it is referred to as " N- roads " power combing.In the power combing of N- roads, because power combing only need to synthesize network just by one-level Realize, be theoretically synthesized in power combing of the loss with synthesizing unrelated and multistage " tree-like " structure of branch road quantity, synthesize network Series increases with the increase of synthesis branch road quantity, and synthesis loss then increases sharply with synthesis series.It can be seen that N- roads power combing When synthesis branch road quantity is larger, there is the combined coefficient higher than " tree-like " structure.However, to millimeter wave N- roads solid state power For synthesis, as synthesis number of branches increases, the corresponding network that synthesizes closes in addition to the reasons such as structure, loss, bandwidth of operation Into when mode issue and multipath solid-state power device integration problem also be present.The N- roads power synthesis network occurred has：Document E.J.Wilkinson,"An N-Way Hybrid Power Divider,"in IRE Transactions on The N- mentioned in Microwave Theory and Techniques, vol.8, no.1, pp.116-118, January 1960. Road Wilkinson combiner circuits, document J.Schellenberg and M.Cohn, " A wideband radial power combiner for FET amplifiers,"1978 IEEE International Solid-State Circuits In Conference.Digest of Technical Papers, San Francisco, CA, USA, 1978, pp.164-165. RADIAL combiner circuit, the document K.J.Russell and R.S.Harp.Broadband diode power- mentioned combining techniques.Air Force Avionics Lab,Wright-Patterson Air Force Base, The coaxial-waveguide combiner circuit and document C.T Rucker.A mentioned in OH, Interim Tech.Rep.no.1, Mar, 1978 multiple-diode high-average power avalanche-diode oscillator.IEEE Trans.Microw.Theory Tech.,1969,17(I2):The forms such as the Rucker combiner circuits mentioned in I156-1158. In these traditional N- roads power synthesis networks, due to structure and technological reason, the branch road quantity for participating in synthesizing is few, circuit Loss is higher, can hardly be used for millimeter wave frequency band and effectively realize multichannel synthesis.Recently, the milli based on waveguiding structure of appearance Metric wave N-, road power synthetic technique achieve certain achievement, and are increasingly becoming the hot topic of solid-state millimeter wave power synthetic technology One of research direction.

Multistage " tree-like " power combing feature is:Bandwidth of operation is mainly determined by power distributing network and power synthesis network It is fixed, typically between 5-15%；Combined coefficient is mainly synthesized by multistage and transmission line loss decision is connected between via net loss and level.This Kind synthetic technology mainly has the synthesis of two-way binary system and chain type synthesis.The synthesis of two-way binary tree uses two 3dB electric bridges step by step Realize, as shown in Fig. 2 having the advantages that circuit structure is simple, and technique is easily achieved.The synthetic technology is in relatively low synthesis series Using relatively succeeding in the case of (less synthesis branch road), adoptable two-way electric bridge is more, such as two-way Wilkinson electric bridges, Ring-shape bridge, branch hybrid etc..In millimeter wave frequency band, corresponding integral electrical bridge loss is higher, and multistage synthesis is difficult to height Efficiency.In the two-way binary tree power combing that millimeter wave low side is carried out preferable effect is can obtain within 3 grades (eight tunnels).

In chain type power combing, Fig. 3, in, per one-level, synthesis is all realized by the coupler of the different degrees of coupling, the synthesis of kth level It is 1Olgk (dB) that the misfortune of device is right ,+1 grade of synthesizer degree of coupling of kth is lOlg (k+1) (dB) ... ..., is so cascaded step by step, directly Untill power output demand is met.During power combing, the damage of transmission line is connected between coupler loss in itself and level Consumption, and synthesis series play a major role to combined coefficient.Its technologic shortcoming is exactly, with synthesis series increase, coupling Device coupling amount is weaker, so that making precision cannot get due guarantee.Recently being realized by waveguide transmission cable architecture for occurring is more Level chain type power synthesis network, relatively low loss can be obtained in millimeter wave frequency band, thus with the potentiality of high efficiency synthesis.

(2) chip-scale synthesizes

In chip-scale synthesis technical field, with semi-conducting material technique, microwave and millimeter wave integrated technology, Precision Machining skill Art and Computer Applied Technology development, using the synthetic technology of above circuit-level, synthesized especially with multistage tree-like binary system Technology, multichannel has been synthesized into microwave, millimeter wave power monolithic on same semiconductor chip.Nearly ten years, same On block chip, by multistage binary system Wilkinson network of electrical bridge, the output of multiple transistors is combined, in millimeter wave Good result is achieved on low side GaAsMMIC power devices.In Ka wave bands, at present TriQuint.Raytheon and The companies such as Sanders can provide a watt commercial monolithic integrated power amplifier for level output, such as document .Product Data Sheet,[Online].Available:www.triquint.com.；Raytheon.Product Data Sheet, [Online].Available:www.raytheon.com.；Sanders.Product Data[Online].Available: Www.sanders.com. described in.The principal element of limitation monolithic integrated power amplifier fan-out capability is combiner circuit damage Consumption.The transmission line made on semiconductor chip has higher losses, when participating in the number of devices increase of synthesis, is synthesized in multistage In it is last what synthesis when signal path grow, path loss is big, and combined coefficient is low, it is difficult to effectively realize multiple branch circuit conjunction Into.In addition, on the monolithic integrated circuit chip of limited area, multiple power dies work simultaneously, and the multi-heat source of concentration causes Heat transfer problem is than more serious.Further, on the MMIC power devices of multichannel synthesis, most chip areas have been used as closing Into network and passive matching, the element manufacturing cost of multichannel synthesis is higher.Generally, in chip-scale synthesis, synthesis series is general No more than three-level.In order to improve single MMIC power chips fan-out capability, except studying more low-loss multichannel combiner circuit net Outside network, current maximally effective approach is exactly to start with from semi-conducting material, device and technique, seeks new device new method.

(3) space power synthesis

From the point of view of higher solid-state millimeter wave power angle is obtained, space/quasi-optical power synthetic technique shows protrusion Advantage.In this synthetic technology, multiple radiation of power units, with correct phase relation, the folded of power is realized in space Add, the power after superposition can be received by probe, can also be positioned directly in power summing point at the high power requirements of space. Different from circuit synthesis, in space/quasi-optical power synthetic technique, power is coupled as instructor in broadcasting's ripple of major diameter by active device Beam, then spatial power demand point is focused on by wave beam or is converted to waveguide mode output, synthesis loss is mainly by active device Output coupling causes to propagate wave beam and propagating when wave beam is coupled to power demand point/port.In this synthetic technology, greatly The beam cross section of diameter allows the synthesis unit number of use more, so as to provide bigger power output；And own Synthesis unit all in parallel operation state, be ideally lost unrelated with synthesis unit quantity so that this synthesis skill Art has fairly obvious advantage in big synthesis unit number, can meet high-power demand.Determine this synthesis skill The successful key of art is exactly cophase stacking of the power signal in space of multiple synthesis units radiation；For needing standard interface Conversion of the power signal to waveguide mode after the situation of (such as rectangular waveguide) output, also presence superposition, i.e. spatial power Effectively collect problem.In the seventies of last century six, there is researcher to be received at 410MHZ frequencies using loudspeaker feed-in and loudspeaker Collection, and the conversion of the plane wave of radiated wave one is obtained by di-lens, realize space power synthesis/distribution, such as document D.Staiman,M.E.Breese,and W.T.Patton.New technique for combining solid-state IEEE J.Solid-State Circuits,Sept.1968,SC-3:Described in 238-243 sources..Someone will again later Such a technology extends to millimeter wave, has done space power synthesis research, such as document in diode component and three terminal device respectively M.F.Durkin,R.J.Eckstein,M.D.Mills,et al..35-GHz active a IEEE MTT-S Int.Microwave Symp.Dig.,Los Angeles,CA,1981:Described in 425427.Ensureing multiple-unit space radiation one Cause on sex chromosome mosaicism, the multiple-unit amplification-space combination array-lattice amplifier (Grid realized using monolithic integration process Amplifier preferable effect) is shown, such as document A.Moussessian, M.C.Wanke, Y Li, et al.A terahertz grid frequency doubler.IEEE Trans.Microw.Theory Tech.,1998,46(12): Described in 1976-1981.Representative achievement in research has California Institute of Technology (California Institute of Technology scholars) report the 512 transistor lattice amplifier arrays realized using pHEMT techniques, should Array passes through lens focusing system, and 5W space combination power is obtained in 37GHz, such as document B.Deckman, D.S.Deakin, Jr.,E.Sovero,et al..A 5-watt,37-GHz monolithic grid amplifier.IEEE MTT S Int.Microwave Symp.Dig.,Boston,MA,2000:Described in 805-808.When space/quasi-optical power combing is being closed Wire chamber in carry out when, avoid electromagnetic radiative losses and outside electromagnetic interference.The space power synthesis in closing wire chamber In technology, researcher uses the horn structure of inwall loaded medium, realizes radiated wave and uniform plane wave in closing wire chamber Effective conversion so that closing wire chamber in quasi-optical array obtain uniform irradiation；Also develop standard waveguide transmission mode simultaneously With the conversion of the propagation mode of radiation in closing wire chamber, it is easy to the feed-in and collection of signal, such as document T.W.Nuteson, M.B.Steer, K.Naishadham, et al..Electromagnetic modeling of finite childrens d structures in quasi-optical systems.IEEE MTT S Int.Microwave Symp.Dig.,San Francisco,CA,June 1996:Described in 1251-1254.Utilize these achievements in research, the Rockwell world (Rochwell International) company takes the lead in reporting the space power synthesis monolithic array amplification of a Ka frequency range standard waveguide interface Device, saturation output power reach 1W, such as document E.A.Sovero, J.B.Hacker, J.A.Higgins, et al..A Ka- band monolithic quasi-optic amplifier.IEEE MTT S Int.Microwave Symp.Dig., Baltimore,MD,1998:Described in 1453-1456.In 34GHz, Lockheed Martin (Lockheed Martin) company with North Carolina State University (Carolina State University) joint research and development active array of one Unit 45, Input realizes the uniform irradiation to amplifying unit array, output end is radiated by waveguide feed-in in the wire chamber of closing Free space, which is realized, focuses on synthesis, and maximum radiated power is 44dBm (25W), three dB bandwidth 800MHZ, such as document S.Ortiz, J.Hubert,E.Schlecht,et al..A 25watt and a 50watt Ka-band quasi-optical amplifier.IEEE MTT S Int.Microwave Symp.Dig.,Boston,MA,2000:Described in 797-800.Defeated Enter end and output end use dielectric loaded horn, realize high power millimeter wave space/quasi-optical synthesis in closed cavity, Sanders companies once obtained preferable Experiment Result, such as document J.J.Sowers, D.J.Pritchard, A.E.White, et al.A 36W,V-band,solid-state source.IEEE MTT-S Int.Microwave Symp.Dig., Anaheim,CA,1999:Described in 235-238；By synthesizing 272 power MMIC, 35W power output is obtained in 61GHz, is realized 45-50% power scavenging efficiency.In the multichannel space/quasi-optical synthetic technology realized in this closing wire chamber, entirely Synthesis system is complicated, designs and produces difficulty；Power output is synthesized except by the mutual phase of each path radiation ripple of quasi-optical array Outside position relation and space radiation power scavenging efficiency influence, ensure that each amplifying unit is illuminated uniformly in array, plays battle array completely All device power fan-out capabilities are also very crucial in row；In addition, the quasi-optical array of multiple solid-state power amplifier compositions is actual The array that a upper and multi-heat source is concentrated, while array electrical property is ensured, it is difficult to take into account effective Heat transmission in array Approach, it is difficult to ensure the normal work of power device in array.

The content of the invention

The shortcomings that in order to overcome above-mentioned prior art, it is an object of the invention to provide a kind of solid-state circuit-waveguide power Synthesizer, it is operable with millimeter wave Terahertz frequency range, and insertion loss is small, and applicable band is wide, and circuit size is small, processing system Facilitate.

To achieve these goals, the technical solution adopted by the present invention is：

A kind of solid-state circuit-waveguide power synthesizer, generally lateral symmetry structure, including dielectric substrate and by rectangle Waveguide 1, subtract the intercommunication waveguiding structure that high waveguide 2, back of the body chamber 3 and two transmission line shielding cavities 4 form, subtract high waveguide 2 in square wave 1 one end is led, back of the body chamber 3 includes medium substrate 8 and the upper surface of medium substrate 8 positioned at the high lower section of waveguide 2, the dielectric substrate is subtracted Metal level, the metal level is made up of two structure being set up in parallel identical units, and each unit is by 50 ohm transmission lines 5th, impedance matching network 6 and probe 7 form, and the probe 7 is the isosceles triangle of top fluting.

The height ratio for subtracting high waveguide 2 and rectangular waveguide 1 is 0.56, and top surface is located at same level-XY faces.

The back of the body chamber 3 and subtract the ratio between length (X to), wide (Y-direction), high (Z-direction) of high waveguide 2 be respectively 0.757,0.632, 1.048。

The rectangular waveguide 1 is standard type rectangular waveguide, with perpendicular to the direction of synthesizer symmetry axis-Y-axis do section- XZ faces, cross-sectional length are that X to size is a mm, and cross-sectional width is that Z-direction size is b mm；The cross-sectional length for subtracting high waveguide 2 That is X is a mm to size, and cross-sectional width is that Z-direction size is 0.57bmm；The upper surface of the back of the body chamber 3 and the following table for subtracting high waveguide 2 The common XY faces in face, with rectangular waveguide 1Y to apart from being 0.057 λ g, it is 0.071 λ g with subtracting the high both sides X of waveguide 2 to distance, carries on the back chamber 3 Cross-sectional length be that Y-direction size is 0.44 λ g, cross-sectional width is that Z-direction size is 0.13 λ g, carry on the back chamber 3 X to size be 0.13 λ g； The lower surface of the transmission line shielding cavity 4 and the coplanar-XY faces in lower surface for subtracting high waveguide 2, away from subtracting the high both sides X of waveguide 2 to distance It is 0.15 λ g, the cross-sectional length of transmission line shielding cavity 4 is that X to size is 0.28 λ g, and cross-sectional width is that Z-direction size is 0.035 λ G, the X of two transmission line shielding cavities 4 to the λ g of spacing 0.018, wherein,For the waveguide ripple of rectangular waveguide main mould It is long, λ₀For vacuum operating wavelength, λ is waveguide work wavelength, λ_cFor main mould cutoff wavelength, error ± 0.8%.

The medium substrate 8 is located at transmission line shielding cavity 4 and subtracts the high bottom of waveguide 2, the lower surface of medium substrate 8 and back of the body chamber 3 Upper surface is coplanar, and the X of medium substrate 8 is 0.95 λ g1 to size, and Y-direction size is 0.68 λ g1, and Z-direction size is 0.05 λ g1, transmission Line shielding cavity 4 is made up of the identical waveguiding structure of two parts, and two-part X is 0.05 λ g to spacing, and Y-direction size is 0.15 λ g, its In,For the waveguide wavelength of planar circuit, λ₀For vacuum operating wavelength, ε_rFor medium relative dielectric constant, error ± 0.8%.

The Y-direction size at the edge of the base of probe 7 away from medium substrate 8 is 0.16 λ g1, and base angle summit is away from medium substrate 8 The X of nearside is 0.07 λ g1, X to the λ g1 of bottom side length 0.31 to size, and two waists grow 0.306 λ g1 after fluting, and the X of fluting is to size For 0.061 λ g1, Y-direction size is 0.1296 λ g1；The impedance matching network 6 includes high resistant transmission line and the probe line of rabbet joint, high resistant Transmission line one end is connected with probe slot bottom, and the X of high resistant transmission line is 0.025 λ g1 to size, and Y-direction size is 0.17 λ g1；50 Europe Nurse transmission line 5 is connected with the high resistant transmission line other end, the X of 50 ohm transmission lines 5 to size be 0.04 λ g1；Two 50 ohm of biographies The X of defeated line 5 is 0.5 λ g1 to spacing, and overall structure is symmetrical on center YZ planes.

Compared with prior art, the present invention is a kind of solid-state circuit-waveguide power composite structure.In D wave band simulation results, Insertion loss is less than 1dB in 113GHz-165GHz frequency ranges；It is good in 120GHz-160GHz frequency band internal loss flatnesses, Power distribution Insertion Loss S12 obtains optimal value -3.2dB within -3.5dB at 126Gz.Two output ports are in D wave band full ranges Uniformity is good in the range of band, and two-port loss difference is no more than 0.05dB.Compared with typical T-shaped microstrip coupler, two-way Probe coupled structure transmission loss is lower, and port uniformity is more preferably.

Brief description of the drawings

Fig. 1 is overall structure figure of the present invention.

Fig. 2 is n level two-way binary tree synthesis schematic diagram.

Fig. 3 is chain type composition principle schematic diagram.

Fig. 4 is overall perspective.

Fig. 5 is dielectric substrate structure chart.

Fig. 6 is top view.

Fig. 7 is side view.

Fig. 8 is dielectric substrate size.

Fig. 9 is present apparatus insertion loss simulation result.

Figure 10 is present apparatus return loss simulation result.

In figure：1. rectangular waveguide, 2. subtract high waveguide, 3. back of the body chambers, 4. shielding cavities, 5.50 ohm transmission lines, 6. impedance matchings Network, 7. probes, 8. medium substrates.

Embodiment

Describe embodiments of the present invention in detail with reference to the accompanying drawings and examples.

As shown in figure 1, a kind of solid-state circuit-waveguide power synthesizer, generally lateral symmetry structure, including medium base Piece, rectangular waveguide 1, subtract high waveguide 2, the back of the body 3, two transmission line shielding cavities 4 of chamber etc., wherein rectangular waveguide 1, subtract high waveguide 2, back of the body chamber 3 and transmission line shielding cavity 4 be intercommunication waveguiding structure；Subtract high waveguide 2 in one end of rectangular waveguide 1, back of the body chamber 3 is positioned at subtracting high waveguide 2 Lower section, dielectric substrate include medium substrate 8 and the metal level of the upper surface of medium substrate 8, what metal level was set up in parallel by two Structure identical unit is formed, and each unit is made up of 50 ohm transmission lines 5, impedance matching network 6 and probe 7, and probe 7 is top Hold the isosceles triangle of fluting.

Wherein, rectangular waveguide 1 is standard type rectangular waveguide, and the height ratio for subtracting high waveguide 2 and rectangular waveguide 1 is 0.56, top Face is located at same level-XY faces.Back of the body chamber 3 and subtract the ratio between length (X to), wide (Y-direction), high (Z-direction) of high waveguide 2 and be respectively 0.757、0.632、1.048。

To obtain optimized parameter, it is necessary to which modeling optimization, the present invention are public using Ansoft in special electromagnetic simulation software The high-frequency structure simulation software (HFSS) of department is modeled emulation, passes through the tuning to parameters in Fig. 4,5,6, Fig. 7, Fig. 8 And simulation optimization, optimal solution is obtained, the parameter size finally determined is：

WAa=a, WAb=b, WAl=0.69 λ g, WBb=0.57b, WBl=0.18 λ g, WCa=0.44 λ g, WCb= 0.13 λ g, WCl=0.13 λ g, Wd1=0.15 λ g, WDd=0.018 λ g, WDa=0.28 λ g, WDb=0.035 λ g, d1= 0.057 λ g, d2=0.071 λ g, d3=0.15 λ g.

Wa=0.95 λ g1, Wb=0.68 λ g1, w=0.5 λ g1, w1=0.04 λ g1, w2=0.025 λ g1, w3=0.31 λ G1, w4=0.061 λ g1, l1=0.5 λ g1, l2=0.17 λ g1, l3=0.1296 λ g1, l4=0.306 λ g1, l5=0.16 λ G1, h=0.05 λ g1, d4=0.07 λ g1.

I.e.：

Rectangular waveguide 1 to do section-XZ faces perpendicular to the direction of synthesizer symmetry axis-Y-axis, cross-sectional length WAa be X to Size is a mm, and cross-sectional width WAb is that Z-direction size is b mm, and Y-direction size WAl is；Subtract the high upper surface of waveguide 2 and rectangular waveguide 1 Upper surface is coplanar, that is, it is also a mm to subtract the cross-sectional length i.e. X in high waveguide 2 to size, and cross-sectional width WBb is that Z-direction size is 0.57b mm, Y-direction size WBl are；Carry on the back the upper surface of chamber 3 and subtract the common XY faces in lower surface of high waveguide 2, the Y-direction with rectangular waveguide 1 Distance d1 is 0.057 λ g, is 0.071 λ g with subtracting the high both sides X of waveguide 2 to distance d2, the cross-sectional length WCa of back of the body chamber 3 is Y-direction chi Very little is 0.44 λ g, and cross-sectional width WCb is that Z-direction size is 0.13 λ g, the longitudinal length WCl of back of the body chamber 3 be X to size be 0.13 λ g； The lower surface of transmission line shielding cavity 4 and the coplanar-XY faces in lower surface for subtracting high waveguide 2, away from subtracting, the high both sides X of waveguide 2 is equal to distance d3 For 0.15 λ g, the cross-sectional length WDa of transmission line shielding cavity 4 is that X to size is 0.28 λ g, and cross-sectional width WDb is that Z-direction size is 0.035 λ g, the X of two transmission line shielding cavities 4 to spacing WDd be 0.018 λ g.

Medium substrate 8 is located at transmission line shielding cavity 4 and subtracts the high bottom of waveguide 2, longitudinally-aligned, the lower surface of medium substrate 8 with Carry on the back that chamber 3 upper surface is coplanar, the X of medium substrate 8 is 0.95 λ g1 to size Wa, and Y-direction size Wb is 0.68 λ g1, and Z-direction size h is 0.05 λ g1, transmission line shielding cavity 4 are made up of the identical waveguiding structure of two parts, two-part X to spacing be 0.05 λ g, Y-direction size Wd1 is 0.15 λ g.

The Y-direction size l5 at edge of the base of probe 7 away from medium substrate 8 is 0.16 λ g1, and base angle summit is near away from medium substrate 8 It is 0.31 λ g1 that the X of side, which to size d4 is 0.07 λ g1, X to bottom side length w3, and the long l4 of two waists is 0.306 λ g1 after fluting, and fluting is wide Degree w4 is that X to size is 0.061 λ g1, and length l3 is that Y-direction size is 0.1296 λ g1；Impedance matching network 6 transmits including high resistant Line and the probe line of rabbet joint, high resistant transmission line one end are connected with probe slot bottom, the width w2 of high resistant transmission line be X to size be 0.025 λ G1, length l2 are that Y-direction size is 0.17 λ g1；50 ohm transmission lines 5 are connected with the high resistant transmission line other end, 50 ohm transmission lines 5 Width w1 be X to size be 0.04 λ g1；The length l1 of 50 ohm transmission lines 5 is 0.5 λ g1 for i.e. Y-direction length, two 50 Europe The X of nurse transmission line 5 is 0.5 λ g1 to spacing w, and overall structure is symmetrical on center YZ planes.

Wherein, WXa is X-direction length, and WYl is Y-direction length, and WZb is Z-direction length,For planar circuit Waveguide wavelength,For the waveguide wavelength of rectangular waveguide main mould, wherein, λ₀For vacuum operating wavelength, λ is ripple Lead operation wavelength, λ_cFor main mould cutoff wavelength, ε_rFor medium relative dielectric constant, error ± 0.8%.

Operation principle of the present invention：

The apparatus main body is planar circuit-waveguide bridge structure, and the structure forms comprising symmetrical two parts, and its basis is Plane dipole probe transformational structure, realize rectangular waveguide main mould TE10 moulds to planar circuit using fluting isosceles triangle probe The direct conversion of quasi- TEM moulds.Probe is located at rectangle and subtracts high waveguide H faces center and be symmetrical structure, can effective reception space electricity Magnetic wave；Adding back of the body chamber reduces transformational structure part effective dielectric constant, and wide band performance is opened up in realization；Impedance matching network point To subtract high waveguides sections and the probe line of rabbet joint-high resistant transmission line two parts, subtract high waveguide and realize rectangular waveguide and probe input impedance Impedance matching, the line of rabbet joint and high resistant transmission line realize the impedance matching of probe output impedance and 50 ohm transmission lines；If follow-up electricity Road size is wider, can influence the width increase of dielectric substrate little for overall performance；If width is more than waveguide broadside, One section can additionally be increased subtract wide matching of waveguide structure and realize good transmission performance.By main mould TE10 mould electric fields in rectangular waveguide Distribution character understands that for the electric field at two probe locations in addition to equal in magnitude, direction is also identical.Thus when between two probes and waveguide When carrying out energy exchange, should also have formed objects and the couple current in direction thereon.So in the waveguide-micro-strip electric bridge knot In structure, two micro-strip ports should have same-phase relation.It can be seen that due to the symmetry in structure, this 0 ° of 3dB electricity of waveguide-micro-strip Same phase that bridge has, constant power distribution/synthesis performance, it is unrelated with working frequency, thus there is broadband character.

In D wave bands simulation result as shown in Figure 9, Figure 10, insertion loss is less than in 113GHz-165GHz frequency ranges 1dB；Good in 120GHz-160GHz frequency band internal loss flatnesses, power distribution Insertion Loss S12 is within -3.5dB, at 126Gz Obtain optimal value -3.2dB.Two output ports uniformity in the range of D wave band Whole frequency bands is good, and two-port loss difference does not surpass Cross 0.05dB.Compared with typical T-shaped microstrip coupler, two-way antenna coupling configuration transmission loss is lower, and port uniformity is more It is good.

Claims (6)

1. a kind of solid-state circuit-waveguide power synthesizer, generally lateral symmetry structure, it is characterised in that including medium base Piece, rectangular waveguide (1), subtract high waveguide (2), back of the body chamber (3) and two transmission line shielding cavities (4), the rectangular waveguide (1), subtract height Waveguide (2), back of the body chamber (3) and transmission line shielding cavity (4) are intercommunication waveguiding structure, subtract high waveguide (2) the one of rectangular waveguide (1) End, for back of the body chamber (3) positioned at subtracting below high waveguide (2), the dielectric substrate includes medium substrate (8) and medium substrate (8) upper table The metal level in face, the metal level are made up of two structure being set up in parallel identical units, and each unit is by 50 Ohm transmissions Line (5), impedance matching network (6) and probe (7) composition, the probe (7) are the isosceles triangle of top fluting.

2. solid-state circuit-waveguide power synthesizer according to claim 1, it is characterised in that it is described subtract high waveguide (2) with The height ratio of rectangular waveguide (1) is 0.56, and top surface is located at same level.

3. solid-state circuit according to claim 1 or claim 2-waveguide power synthesizer, it is characterised in that on the back of the body chamber (3) Surface is coplanar with subtracting high waveguide (2) lower surface, it is described the back of the body chamber (3) and subtract the ratio between the length of high waveguide (2) i.e. X to, Y-direction, Z To length ratio respectively 0.757,0.632,1.048.

4. solid-state circuit-waveguide power synthesizer according to claim 1, it is characterised in that the rectangular waveguide (1) is Standard type rectangular waveguide, to do section perpendicular to the direction of synthesizer symmetry axis Y-axis, cross-sectional length be X to size be a mm, Cross-sectional width is that Z-direction size is b mm；The cross-sectional length i.e. X for subtracting high waveguide (2) is a mm to size, and cross-sectional width is Z It is 0.57b mm to size；The back of the body chamber (3) and the Y-direction distance of rectangular waveguide (1) are 0.057 λ g, with subtracting high waveguide (2) both sides X is 0.071 λ g to distance, and the cross-sectional length of back of the body chamber (3) is that Y-direction size is 0.44 λ g, and cross-sectional width is that Z-direction size is 0.13 λ g, the back of the body chamber (3) X to size be 0.13 λ g；The lower surface of the transmission line shielding cavity (4) and the lower surface for subtracting high waveguide (2) It is coplanar, it is 0.15 λ g away from high waveguide (2) both sides X is subtracted to distance, the cross-sectional length of transmission line shielding cavity (4) is that X is to size 0.28 λ g, cross-sectional width are that Z-direction size is 0.035 λ g, the X of two transmission line shielding cavities (4) to the λ g of spacing 0.018, wherein,For the waveguide wavelength of rectangular waveguide main mould, λ₀For vacuum operating wavelength, λ is waveguide work wavelength, λ_cBased on Mould cutoff wavelength, error ± 0.8%.

5. solid-state circuit-waveguide power synthesizer according to claim 4, it is characterised in that medium substrate (8) position In transmission line shielding cavity (4) and subtract high waveguide (2) bottom, medium substrate (8) lower surface and back of the body chamber (3) upper surface are coplanar, away from biography The X of defeated line shielding cavity (4) both sides to distance be 0.3505 λ g1, the X of medium substrate (8) to size be 0.95 λ g1, Y-direction size For 0.68 λ g1, Z-direction size is 0.05 λ g1, and transmission line shielding cavity (4) is made up of the identical waveguiding structure of two parts, two-part X It is 0.05 λ g to spacing, Y-direction size is 0.15 λ g, wherein,For the waveguide wavelength of planar circuit, λ₀For vacuum work Make wavelength, ε_rFor medium relative dielectric constant, error ± 0.8%.

6. solid-state circuit-waveguide power synthesizer according to claim 4, it is characterised in that probe (7) base away from The Y-direction size at the edge of medium substrate (8) is 0.16 λ g1, and X of the base angle summit away from medium substrate (8) nearside is to size 0.07 λ g1, it is 0.31 λ g1 that bottom side length, which is X to size, and two waists grow 0.306 λ g1 after fluting, the X of fluting to size be 0.061 λ G1, Y-direction size are 0.1296 λ g1；The impedance matching network (6) includes high resistant transmission line and the probe line of rabbet joint, high resistant transmission line One end is connected with probe slot bottom, and the X of high resistant transmission line is 0.025 λ g1 to size, and Y-direction size is 0.17 λ g1；50 Ohm transmissions Line (5) is connected with the high resistant transmission line other end, the X of 50 ohm transmission lines (5) to size be 0.04 λ g1；Two 50 Ohm transmissions The X of line (5) is 0.5 λ g1 to spacing, and overall structure is symmetrical on center YZ planes.