CN107385444A - A kind of etching paste formulation of nano-silver conductive film - Google Patents
A kind of etching paste formulation of nano-silver conductive film Download PDFInfo
- Publication number
- CN107385444A CN107385444A CN201710473851.1A CN201710473851A CN107385444A CN 107385444 A CN107385444 A CN 107385444A CN 201710473851 A CN201710473851 A CN 201710473851A CN 107385444 A CN107385444 A CN 107385444A
- Authority
- CN
- China
- Prior art keywords
- etching paste
- nano
- conductive film
- parts
- silver conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
Abstract
The present invention provides a kind of etching paste formulation of nano-silver conductive film, is made up of by weight following components：SiO2Matrix：3 30 parts；Etchant：0.1 10 parts；Water absorbing agent：1 20 parts；Polyethylene glycol：5 15 parts；Propane diols：10 20 parts；Oxalic acid：1 10 parts；Fluorine compounds：0.1 7 parts；Protective agent：0.1 5 parts；Surfactant：0.001 2 parts.Strong acid and highly basic are not contained in etching paste provided by the invention, environmental pollution is small；And the addition of fluorine compounds can make in the material that etching paste rapid osmotic etches to needs, improve etch-rate.
Description
Technical field
The present invention relates to etching paste technical field, more particularly to a kind of etching paste formulation of nano-silver conductive film.
Background technology
At present, nano silver wire is because its unique light, electric physical property, and is used on various sensors, such as wide
The general humidity sensor applied to many measuring instruments and humidity control system.And nano silver wire have excellent electric conductivity,
The incomparable special natures of other materials such as stronger adsorption capacity, good biocompatibility, and be used to prepare transparent
Conductive film, substitute traditional tin indium oxide (ITO) transparent electrode material.
Traditional gold-tinted etch process flow is：It is preceding cleaning, resist coating, exposure, development, etching, de- photoresist, rear clear
Wash, dry.It is rotten but in etching process, the etching paste used contains strong acid and highly basic more, produces strong impulse smell
Corrosion is strong, pollutes environment, endangers the health of operating personnel；And the speed of existing etching paste etching is slow, etching process
Efficiency comparison it is low.
The content of the invention
The present invention is exactly to be directed to above technical problem, there is provided a kind of etching paste formulation of nano-silver conductive film.
The present invention to achieve the above object, using following technical scheme：A kind of etching paste formulation of nano-silver conductive film, is pressed
Weight is made up of following components：
The water absorbing agent is one or more combinations in activated carbon, molecular sieve, calcium oxide, iron powder, silica gel.
The etchant is hypochlorite, permanganate, perchlorate, bichromate, cupric salt, trivalent iron salt, mistake
In oxide, the mixture of peroxide and acid, the mixture of peroxide and complexing agent, sulphur simple substance, organic polysulfide
One or more combinations.
The protective agent is N vinylamide polymer, ethylene glycol, propane diols, glycerine, pentanediol or butanediol
At least one of.
The surfactant is cetyl trimethylammonium bromide, tetrabutylammonium chloride or diphenylamine sulfonic acid sodium salt.
The beneficial effects of the invention are as follows：Strong acid and highly basic are not contained in etching paste provided by the invention, environmental pollution is small；And
And the addition of fluorine compounds can make in the material that etching paste rapid osmotic etches to needs, improve etch-rate.
Embodiment
With reference to embodiment, the invention will be further described：
A kind of etching paste formulation of nano-silver conductive film of embodiment 1, is made up of following components by weight：
The water absorbing agent is one or more combinations in activated carbon, molecular sieve, calcium oxide, iron powder, silica gel.
The etchant is hypochlorite, permanganate, perchlorate, bichromate, cupric salt, trivalent iron salt, mistake
In oxide, the mixture of peroxide and acid, the mixture of peroxide and complexing agent, sulphur simple substance, organic polysulfide
One or more combinations.
The protective agent is N vinylamide polymer, ethylene glycol, propane diols, glycerine, pentanediol or butanediol
At least one of.
The surfactant is cetyl trimethylammonium bromide, tetrabutylammonium chloride or diphenylamine sulfonic acid sodium salt.
A kind of etching paste formulation of nano-silver conductive film of embodiment 2, is made up of following components by weight：
The water absorbing agent is one or more combinations in activated carbon, molecular sieve, calcium oxide, iron powder, silica gel.
The etchant is hypochlorite, permanganate, perchlorate, bichromate, cupric salt, trivalent iron salt, mistake
In oxide, the mixture of peroxide and acid, the mixture of peroxide and complexing agent, sulphur simple substance, organic polysulfide
One or more combinations.
The protective agent is N vinylamide polymer, ethylene glycol, propane diols, glycerine, pentanediol or butanediol
At least one of.
The surfactant is cetyl trimethylammonium bromide, tetrabutylammonium chloride or diphenylamine sulfonic acid sodium salt.
Strong acid and highly basic are not contained in etching paste provided by the invention, environmental pollution is small；And the addition energy of fluorine compounds
Enough make in the material that etching paste rapid osmotic etches to needs, improve etch-rate；And under normal temperature, water in water absorbing agent,
Therefore the etching paste based on nano-silver conductive film can not be etched with nanometer silver reaction, and under 60 DEG C~130 DEG C high temperature water from
Discharged in adsorbent, realize the ionization of etchant, so as to be etched reaction rapidly, and in different hot conditions
Under, it is controllable that etching speed can be achieved；And the lotion remained after etching reaction can be rapidly removed by washing.
The present invention is exemplarily described above, it is clear that present invention specific implementation is not subject to the restrictions described above,
As long as employing the various improvement of inventive concept and technical scheme of the present invention progress, or not improved directly apply to other fields
Close, within protection scope of the present invention.
Claims (5)
1. a kind of etching paste formulation of nano-silver conductive film, it is characterised in that be made up of by weight following component：
2. the etching paste formulation of a kind of nano-silver conductive film according to claim 1, it is characterised in that the water absorbing agent is
One or more combinations in activated carbon, molecular sieve, calcium oxide, iron powder, silica gel.
3. the etching paste formulation of a kind of nano-silver conductive film according to claim 1, it is characterised in that the etchant is
Hypochlorite, permanganate, perchlorate, bichromate, cupric salt, trivalent iron salt, peroxide, peroxide and acid
One or more combinations in mixture, the mixture of peroxide and complexing agent, sulphur simple substance, organic polysulfide.
4. the etching paste formulation of a kind of nano-silver conductive film according to claim 1, it is characterised in that the protective agent is
At least one of N vinylamide polymer, ethylene glycol, propane diols, glycerine, pentanediol or butanediol.
A kind of 5. etching paste formulation of nano-silver conductive film according to claim 1, it is characterised in that the surface-active
Agent is cetyl trimethylammonium bromide, tetrabutylammonium chloride or diphenylamine sulfonic acid sodium salt.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710473851.1A CN107385444A (en) | 2017-06-21 | 2017-06-21 | A kind of etching paste formulation of nano-silver conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710473851.1A CN107385444A (en) | 2017-06-21 | 2017-06-21 | A kind of etching paste formulation of nano-silver conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107385444A true CN107385444A (en) | 2017-11-24 |
Family
ID=60332526
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710473851.1A Pending CN107385444A (en) | 2017-06-21 | 2017-06-21 | A kind of etching paste formulation of nano-silver conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107385444A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215592A (en) * | 2013-04-27 | 2013-07-24 | 苏州诺菲纳米科技有限公司 | Etching cream, applications of etching cream, and method for etching nano silver conductive material by utilizing etching cream |
| CN105441949A (en) * | 2016-01-26 | 2016-03-30 | 苏州诺菲纳米科技有限公司 | Nano-silver etchant, method for preparing patterned nano-silver conducting film and touch sensor |
| CN105745357A (en) * | 2013-11-08 | 2016-07-06 | 默克专利有限公司 | Method for structuring a transparent conductive matrix comprising silver nano materials |
| CN106433647A (en) * | 2016-09-19 | 2017-02-22 | 苏州诺菲纳米科技有限公司 | Etching paste based on nano-silver conducting film and preparation method of etching paste |
-
2017
- 2017-06-21 CN CN201710473851.1A patent/CN107385444A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103215592A (en) * | 2013-04-27 | 2013-07-24 | 苏州诺菲纳米科技有限公司 | Etching cream, applications of etching cream, and method for etching nano silver conductive material by utilizing etching cream |
| CN104805441A (en) * | 2013-04-27 | 2015-07-29 | 苏州诺菲纳米科技有限公司 | Etching paste, application of etching paste and method for etching nanosilver conductive material by utilizing etching paste |
| CN105745357A (en) * | 2013-11-08 | 2016-07-06 | 默克专利有限公司 | Method for structuring a transparent conductive matrix comprising silver nano materials |
| CN105441949A (en) * | 2016-01-26 | 2016-03-30 | 苏州诺菲纳米科技有限公司 | Nano-silver etchant, method for preparing patterned nano-silver conducting film and touch sensor |
| CN106433647A (en) * | 2016-09-19 | 2017-02-22 | 苏州诺菲纳米科技有限公司 | Etching paste based on nano-silver conducting film and preparation method of etching paste |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171124 |
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| RJ01 | Rejection of invention patent application after publication |