CN107353023B - A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof - Google Patents
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof Download PDFInfo
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- CN107353023B CN107353023B CN201710653533.3A CN201710653533A CN107353023B CN 107353023 B CN107353023 B CN 107353023B CN 201710653533 A CN201710653533 A CN 201710653533A CN 107353023 B CN107353023 B CN 107353023B
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/66—Monolithic refractories or refractory mortars, including those whether or not containing clay
Abstract
The present invention relates to oxidation resistant silicon carbide castables of a kind of selfreparing and preparation method thereof.Its technical solution is: using the simple substance zirconium of the silicon carbide of 75 ~ 95wt%, the carbon black of 1 ~ 8wt%, the simple substance silica flour of 0.1 ~ 8wt%, the silicon powder of 0.5 ~ 6wt% and 0.1 ~ 4wt% as raw material, add the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, it is uniformly mixed to get premix is arrived;Then the silica solution of the 5 ~ 15wt% of raw material is added into the premix, stirs evenly, the oxidation resistant silicon carbide castable of selfreparing is made.The oxidation resistant silicon carbide castable of selfreparing prepared by the present invention has the characteristics that strong high temperature excellent in mechanical performance, thermal conductivity height, oxidation resistance, the thermal shock resistance good, long service life of energy and energy conservation and environmental protection.
Description
Technical field
The invention belongs to castable technical fields.More particularly to a kind of oxidation resistant silicon carbide castable of selfreparing and its system
Preparation Method.
Background technique
SiC has high-melting-point, high rigidity, high heat conductance and good anti-scour property, is widely used in steel smelting
The fields such as refining, nonferrous metallurgy, waste incineration and ceramic industry.However, the fatal weakness of SiC material be it is easy to oxidize under high temperature,
SiO is formed on surface after SiC oxidation2Oxidation film, SiO2Oxidation film and SiC matrix coefficient of expansion gap are larger, in cold cycling mistake
Cheng Zhonghui is cracked, and excessive SiO2It is unfavorable to the high-temperature behavior of SiC material.Researcher prepares B in surface of SiC2O3It applies
Layer is to improve SiC inoxidizability, under hot conditions, the B after melting2O3Good fluidity can fill stomata, prevent O2Diffusion, though it mentions
High antioxidant, but after temperature is higher than 1100 DEG C, B2O3Volatilization is serious, cannot play the role of oxidation resistant.A kind of " high temperature rubbish
Rubbish incinerator castable and preparation method thereof " (CN201510721132.8) patented technology, introduces nitric acid in SiC castable
Iron obtains Fe by reduction, using Fe as antioxidant, though improve inoxidizability of the waste incinerator with SiC castable, Fe
Introducing increase refractory material impurity, increase the amount of liquid phase under high temperature, reduce liquid phase viscosity, to the high-temperature behavior of material
It is unfavorable." a kind of silicon carbide brick for garbage incinerator and preparation method thereof " (CN201110235574.3) patented technology adds silicon
Powder and aluminium powder as antioxidant, though however the silicon powder and aluminium powder of addition can slow down the oxidation of SiC, the product after oxidation is still
It is so inconsistent with the SiC matrix coefficient of expansion, it will cause material cracks.
Summary of the invention
The present invention is directed to overcome prior art defect, it is therefore an objective to provide a kind of oxidation resistant silicon carbide castable of selfreparing
Preparation method, with the high temperature excellent in mechanical performance, anti-oxidant of the oxidation resistant silicon carbide castable of selfreparing prepared by this method
Ability is strong, thermal shock resistance can be got well and long service life.
To achieve the above object, the technical solution adopted by the present invention is that: with the silicon carbide of 75 ~ 95wt%, the charcoal of 1 ~ 8wt%
The simple substance zirconium of black, 0.1 ~ 8wt% simple substance silica flour, the silicon powder of 0.5 ~ 6wt% and 0.1 ~ 4wt% is raw material, adds the raw material
The water-reducing agent of 0.1 ~ 0.3wt% is uniformly mixed to get premix is arrived;Then be added into the premix raw material 5 ~
The silica solution of 15wt%, stirs evenly, and the oxidation resistant silicon carbide castable of selfreparing is made.
SiC content >=98wt% of the silicon carbide;The grain composition of the silicon carbide is:
Partial size, which is less than 5mm and is more than or equal to 3mm, accounts for 10 ~ 15wt% of silicon carbide;
Partial size is less than 3mm and accounts for 30 ~ 35wt% of silicon carbide more than or equal to 1mm;
Partial size, which is less than 1mm and is more than or equal to 0.088mm, accounts for 20 ~ 25wt% of silicon carbide;
Partial size, which is less than 0.088mm and is more than or equal to 0.044mm, accounts for 10 ~ 15wt% of silicon carbide;
Partial size is less than 0.044mm and accounts for 10 ~ 15wt% of silicon carbide.
C content >=99wt% of the carbon black, partial size≤38 μm of the carbon black.
Si content >=97wt% of the simple substance silica flour, partial size≤38 μm of the simple substance silica flour.
The SiO of the silicon powder2Content >=92wt%, partial size≤0.6 μm of the silicon powder.
The SiO of the silica solution2Content is 25% ~ 30wt%, and the pH value of the silica solution is 9 ~ 11.
The Zr content of the simple substance zirconium is >=99wt%, partial size≤45 μm of the simple substance zirconium.
The water-reducing agent is one kind or two of polyethers, polycarboxylic acids, sodium tripolyphosphate, sodium tetrapolyphosphate and calgon
Kind.
Due to the adoption of the above technical scheme, the present invention has following good effect compared with prior art:
Present invention introduces simple substance zirconium and carbon black silicon carbide under the conditions of oxidizing atmosphere, the carbon black of material internal is first
It is oxidized to form CO, then part SiC can also be oxidized to form SiO2And CO;Elemental silicon and SiO2For silicon source, react to be formed with CO
SiC whisker reduces the decline for causing SiC content in system because of SiC oxidation, improves the oxidation resistant silicon carbide cast of selfreparing
Expect the high temperature mechanical property of (hereinafter referred to as silicon carbide castable).Meanwhile with CO to react in-situ preparation a certain amount of for metal zirconium
Graphite improves the intensity of silicon carbide castable.
Metal zirconium in the present invention aoxidizes to form ZrO2, certain volume expansion is generated, stomata is blocked, hinders O2Diffusion, and its
Fusing point is high, can absorb extra SiO2Zircon is generated, the amount of liquid phase of material under high temperature is reduced.By addition simple substance zirconium, silicon and
Carbon black, reaction in-situ form SiC whisker and graphite, reduce the loss of SiC and C, while absorbing SiO2Forming zircon makes to be carbonized
Silicon castable has self-healing properties and improves high temperature mechanical property.
Silicon carbide castable prepared by the present invention is formed through vibrating casting, and room temperature conserves 24 ~ 30 hours, demoulding, 100 ~
It is toasted 24 ~ 30 hours under the conditions of 120 DEG C, through detecting: flexural strength is 30 ~ 40MPa after 1500 DEG C × 3h is burnt;1500 DEG C × 3h is burnt
Compressive resistance is 125 ~ 155MPa afterwards;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate constant is 0.4 × 10-5~1.5×
10-5 %·min-1。
The graphite that the present invention is formed in situ has good heating conduction, can be improved the thermal conductivity of silicon carbide castable,
The thermal shock resistance of silicon carbide castable is further increased, service life can be significantly improved.
Therefore, the oxidation resistant silicon carbide castable of selfreparing prepared by the present invention has high temperature excellent in mechanical performance, heat
The characteristics of conductance is high, oxidation resistance is strong, thermal shock resistance can be got well and long service life.
Specific embodiment
The invention will be further described With reference to embodiment, not to the limitation of its protection scope.
It is first that material Unify legislation used by present embodiment is as follows to avoid repeating, it is no longer superfluous in embodiment
It states:
SiC content >=98wt% of the silicon carbide;The grain composition of the silicon carbide is:
Partial size, which is less than 5mm and is more than or equal to 3mm, accounts for 10 ~ 15wt% of silicon carbide;
Partial size is less than 3mm and accounts for 30 ~ 35wt% of silicon carbide more than or equal to 1mm;
Partial size, which is less than 1mm and is more than or equal to 0.088mm, accounts for 20 ~ 25wt% of silicon carbide;
Partial size, which is less than 0.088mm and is more than or equal to 0.044mm, accounts for 10 ~ 15wt% of silicon carbide;
Partial size is less than 0.044mm and accounts for 10 ~ 15wt% of silicon carbide.
C content >=99wt% of the carbon black, partial size≤38 μm of the carbon black.
Si content >=97wt% of the simple substance silica flour, partial size≤38 μm of the simple substance silica flour.
The SiO of the silicon powder2Content >=92wt%, partial size≤0.6 μm of the silicon powder.
The SiO of the silica solution2Content is 25% ~ 30wt%, and the pH value of the silica solution is 9 ~ 11.
The Zr content of the simple substance zirconium is >=99wt%, partial size≤45 μm of the simple substance zirconium.
Embodiment 1
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
With the silicon carbide of 75 ~ 80wt%, the carbon black of 5 ~ 8wt%, the simple substance silica flour of 4 ~ 8wt%, the silicon powder of 4 ~ 6wt% and 2.5 ~
The simple substance zirconium of 4wt% is raw material, adds the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived;So
The silica solution of the 5 ~ 6wt% of raw material is added in the backward premix, stirs evenly, the oxidation resistant silicon carbide of selfreparing is made
Castable.
Water-reducing agent described in the present embodiment is polyethers.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 32 ~
36MPa;Compressive resistance is 125 ~ 130MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 0.4 × 10-5~0.6×10-5 %·min-1。
Embodiment 2
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
It is micro- with the silicon carbide of 76 ~ 81wt%, the carbon black of 4.5 ~ 7.5wt%, the simple substance silica flour of 4 ~ 8wt%, the silicon of 3.5 ~ 5.5wt%
The simple substance zirconium of powder and 2.5 ~ 4wt% are raw material, add the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, are uniformly mixed to get in advance
Mixing;Then the silica solution of the 6 ~ 7wt% of raw material is added into the premix, stirs evenly, it is oxidation resistant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is polycarboxylic acids.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 33 ~
37MPa;Compressive resistance is 127 ~ 132MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 0.5 × 10-5~0.7×10-5 %·min-1。
Embodiment 3
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
With the silicon carbide of 79 ~ 83wt%, the carbon black of 4 ~ 7wt%, the simple substance silica flour of 3.5 ~ 7.5wt%, 3 ~ 5wt% silicon powder and
The simple substance zirconium of 2 ~ 3.5wt% is raw material, adds the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived
Material;Then the silica solution of the 7 ~ 8wt% of raw material is added into the premix, stirs evenly, the oxidation resistant carbon of selfreparing is made
SiClx castable.
Water-reducing agent described in the present embodiment is sodium tripolyphosphate.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 34 ~
37MPa;Compressive resistance is 130 ~ 135MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 0.6 × 10-5~0.8×10-5 %·min-1。
Embodiment 4
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
It is micro- with the silicon carbide of 80 ~ 84wt%, the carbon black of 3.5 ~ 6.5wt%, the simple substance silica flour of 3 ~ 7wt%, the silicon of 2.5 ~ 4.5wt%
The simple substance zirconium of powder and 2 ~ 3.5wt% are raw material, add the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, are uniformly mixed to get in advance
Mixing;Then the silica solution of the 8 ~ 9wt% of raw material is added into the premix, stirs evenly, it is oxidation resistant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is sodium tetrapolyphosphate.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 35 ~
38MPa;Compressive resistance is 132 ~ 137MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 0.7 × 10-5~0.9×10-5 %·min-1。
Embodiment 5
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
With the silicon carbide of 83 ~ 87wt%, the carbon black of 3 ~ 6wt%, the simple substance silica flour of 2.5 ~ 6.5wt%, 2 ~ 4wt% silicon powder and
The simple substance zirconium of 1.5 ~ 3wt% is raw material, adds the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived
Material;Then the silica solution of the 9 ~ 10wt% of raw material is added into the premix, stirs evenly, it is oxidation resistant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is calgon.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 36 ~
38MPa;Compressive resistance is 136 ~ 141MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 0.8 × 10-5~1.0×10-5 %·min-1。
Embodiment 6
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
It is micro- with the silicon carbide of 84 ~ 88wt%, the carbon black of 2.5 ~ 5.5wt%, the simple substance silica flour of 2 ~ 6wt%, the silicon of 1.5 ~ 3.5wt%
The simple substance zirconium of powder and 1.5 ~ 3wt% are raw material, add the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, are uniformly mixed to get in advance
Mixing;Then the silica solution of the 10 ~ 11wt% of raw material is added into the premix, stirs evenly, it is anti-oxidant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is the mixture of polyethers and polycarboxylic acids.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 36 ~
38MPa;Compressive resistance is 139 ~ 144MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 0.9 × 10-5~1.1×10-5 %·min-1。
Embodiment 7
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
It is micro- with the silicon carbide of 86 ~ 90wt%, the carbon black of 2 ~ 5wt%, the simple substance silica flour of 1.5 ~ 5.5wt%, the silicon of 1.5 ~ 3.5wt%
The simple substance zirconium of powder and 1 ~ 2.5wt% are raw material, add the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, are uniformly mixed to get in advance
Mixing;Then the silica solution of the 11 ~ 12wt% of raw material is added into the premix, stirs evenly, it is anti-oxidant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is the mixture of polycarboxylic acids and sodium tripolyphosphate.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 36 ~
39MPa;Compressive resistance is 144 ~ 149MPa after 1200 DEG C × 5h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 1.0 × 10-5~1.2×10-5 %·min-1。
Embodiment 8
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
With the silicon carbide of 87 ~ 91wt%, the carbon black of 1.5 ~ 4.5wt%, the simple substance silica flour of 1 ~ 5wt%, 1 ~ 3wt% silicon powder and
The simple substance zirconium of 1 ~ 2.5wt% is raw material, adds the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived
Material;Then the silica solution of the 12 ~ 13wt% of raw material is added into the premix, stirs evenly, it is oxidation resistant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is the mixture of sodium tripolyphosphate and sodium tetrapolyphosphate.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 37 ~
39MPa;Compressive resistance is 148 ~ 152MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 1.1 × 10-5~1.3×10-5 %·min-1。
Embodiment 9
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
With the silicon carbide of 90 ~ 94wt%, the carbon black of 1 ~ 4wt%, the simple substance silica flour of 0.6 ~ 4.5wt%, 1 ~ 3wt% silicon powder and
The simple substance zirconium of 0.5 ~ 1.5wt% is raw material, adds the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived
Material;Then the silica solution of the 13 ~ 14wt% of raw material is added into the premix, stirs evenly, it is oxidation resistant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is the mixture of sodium tetrapolyphosphate and calgon.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 37 ~
39MPa;Compressive resistance is 150 ~ 154MPa after 1200 DEG C × 5h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 1.2 × 10-5~1.4×10-5 %·min-1。
Embodiment 10
A kind of oxidation resistant silicon carbide castable of selfreparing and preparation method thereof.Preparation method described in the present embodiment is:
With the silicon carbide of 91 ~ 95wt%, the carbon black of 1 ~ 4wt%, the simple substance silica flour of 0.1 ~ 4wt%, 0.5 ~ 2.5wt% silicon powder
Simple substance zirconium with 0.1 ~ 1wt% is raw material, adds the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived
Material;Then the silica solution of the 14 ~ 15wt% of raw material is added into the premix, stirs evenly, it is oxidation resistant that selfreparing is made
Silicon carbide castable.
Water-reducing agent described in the present embodiment is the mixture of polyethers and calgon.
The oxidation resistant silicon carbide castable of selfreparing manufactured in the present embodiment is formed through vibrating casting, room temperature maintenance 24 ~ 30
Hour, demoulding toast 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: after 1500 DEG C × 3h is burnt flexural strength for 38 ~
40MPa;Compressive resistance is 152 ~ 155MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate is normal
Number is 1.3 × 10-5~1.5×10-5 %·min-1。
Present embodiment has following good effect compared with prior art:
Present embodiment introduce simple substance zirconium and carbon black silicon carbide under the conditions of oxidizing atmosphere, material internal
Carbon black is oxidized to form CO first, and then part SiC can also be oxidized to form SiO2And CO;Elemental silicon and SiO2For silicon source, with CO
Reaction forms SiC whisker, reduces the decline for causing SiC content in system because of SiC oxidation, improves the oxidation resistant carbon of selfreparing
The high temperature mechanical property of SiClx castable (hereinafter referred to as silicon carbide castable).Meanwhile metal zirconium reacts in-situ preparation with CO
A certain amount of graphite improves the intensity of silicon carbide castable.
Metal zirconium in present embodiment aoxidizes to form ZrO2, certain volume expansion is generated, stomata is blocked, hinders O2
Diffusion, and its fusing point is high, can absorb extra SiO2Zircon is generated, the amount of liquid phase of material under high temperature is reduced.It is single by addition
Matter zirconium, silicon and carbon black, reaction in-situ form SiC whisker and graphite, reduce the loss of SiC and C, while absorbing SiO2Form zirconium English
Stone makes silicon carbide castable have self-healing properties and improves high temperature mechanical property.
The silicon carbide castable of present embodiment preparation is formed through vibrating casting, and room temperature conserves 24 ~ 30 hours, is taken off
Mould toasts 24 ~ 30 hours under the conditions of 100 ~ 120 DEG C, through detecting: flexural strength is 30 ~ 40MPa after 1500 DEG C × 3h is burnt;
Compressive resistance is 125 ~ 155MPa after 1500 DEG C × 3h is burnt;10h is aoxidized under 1500 DEG C of air atmospheres, oxidation rate constant is
0.4×10-5~1.5×10-5 %·min-1。
The graphite that present embodiment is formed in situ has good heating conduction, can be improved silicon carbide castable
Thermal conductivity further increases the thermal shock resistance of silicon carbide castable, can significantly improve service life.
Therefore, the oxidation resistant silicon carbide castable of selfreparing of present embodiment preparation has high temperature mechanical property
It is excellent, thermal conductivity is high, oxidation resistance is strong, thermal shock resistance can be well and the characteristics of long service life.
Claims (9)
1. a kind of preparation method of the oxidation resistant silicon carbide castable of selfreparing, it is characterised in that with the silicon carbide of 75 ~ 95wt%, 1
The carbon black of ~ 8wt%, the simple substance silica flour of 0.1 ~ 8wt%, the silicon powder of 0.5 ~ 6wt% and 0.1 ~ 4wt% simple substance zirconium be raw material, then plus
Enter the water-reducing agent of the 0.1 ~ 0.3wt% of raw material, is uniformly mixed to get premix is arrived;Then described in being added into the premix
The silica solution of 5 ~ 15wt% of raw material, stirs evenly, and the oxidation resistant silicon carbide castable of selfreparing is made.
2. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
SiC content >=98wt% of silicon carbide;The grain composition of the silicon carbide is:
Partial size, which is less than 5mm and is more than or equal to 3mm, accounts for 10 ~ 15wt% of silicon carbide,
Partial size is less than 3mm and accounts for 30 ~ 35wt% of silicon carbide more than or equal to 1mm,
Partial size, which is less than 1mm and is more than or equal to 0.088mm, accounts for 20 ~ 25wt% of silicon carbide,
Partial size, which is less than 0.088mm and is more than or equal to 0.044mm, accounts for 10 ~ 15wt% of silicon carbide,
Partial size is less than 0.044mm and accounts for 10 ~ 15wt% of silicon carbide.
3. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
C content >=99wt% of carbon black, partial size≤38 μm of the carbon black.
4. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
Si content >=97wt% of simple substance silica flour, partial size≤38 μm of the simple substance silica flour.
5. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
The SiO of silicon powder2Content >=92wt%, partial size≤0.6 μm of the silicon powder.
6. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
The SiO of silica solution2Content is 25% ~ 30wt%, and the pH value of the silica solution is 9 ~ 11.
7. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
The Zr content of simple substance zirconium is >=99wt%, partial size≤45 μm of the simple substance zirconium.
8. the preparation method of the oxidation resistant silicon carbide castable of selfreparing according to claim 1, it is characterised in that described
Water-reducing agent is the one or two of polyethers, polycarboxylic acids, sodium tripolyphosphate, sodium tetrapolyphosphate and calgon.
9. a kind of oxidation resistant silicon carbide castable of selfreparing, it is characterised in that the oxidation resistant silicon carbide castable of selfreparing
Be any one of according to claim 1 ~ 8 described in the oxidation resistant silicon carbide castable of selfreparing preparation method prepared by
The oxidation resistant silicon carbide castable of selfreparing.
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