CN107346793A - A kind of photoelectric conversion device, method and apparatus - Google Patents

A kind of photoelectric conversion device, method and apparatus Download PDF

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Publication number
CN107346793A
CN107346793A CN201710516371.9A CN201710516371A CN107346793A CN 107346793 A CN107346793 A CN 107346793A CN 201710516371 A CN201710516371 A CN 201710516371A CN 107346793 A CN107346793 A CN 107346793A
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China
Prior art keywords
component
outgoing
projecting
output
reflection subassembly
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CN201710516371.9A
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Chinese (zh)
Inventor
张振华
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Lenovo Beijing Ltd
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Lenovo Beijing Ltd
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Priority to CN201710516371.9A priority Critical patent/CN107346793A/en
Publication of CN107346793A publication Critical patent/CN107346793A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

The invention discloses a kind of photoelectric conversion device, including：Beam collection component, for receive wavelength within a predetermined range, with the first incident projecting beam of any angle, and be output to light beam reflection subassembly；The light beam reflection subassembly, for being totally reflected to first projecting beam inside the light beam reflection subassembly, the first outgoing beam is formed, is output to beam reception component；The beam reception component, electric energy is converted to for receiving first outgoing beam, and by the luminous energy of first outgoing beam.The embodiment of the present invention also provides a kind of opto-electronic conversion method.

Description

A kind of photoelectric conversion device, method and apparatus
Technical field
The present invention relates to electronic technology, more particularly to a kind of photoelectric conversion device, method and apparatus.
Background technology
Opto-electronic conversion is solar radiant energy to be directly changed into by photovoltaic effect the process of electric energy.The principle of this process It is that photon transfers energy to electronics and makes its motion so as to form electric current, statistics energy storage device storage, in various occasions Electric energy is exported, such as mobile phone, aircraft, electric car electronic equipment can be as main in electronic equipment or auxiliary electric energy Source.
The core technology of opto-electronic conversion is that illumination is made full use of, and avoids the reflection of light, the light that correlation technique provides Electricity conversion, the problem of being inevitably present because of light reflections affect photoelectric transformation efficiency.
The content of the invention
To solve existing technical problem, the embodiments of the invention provide a kind of photoelectric conversion device, can at least solve Certainly the above-mentioned problems in the prior art.
What the technical scheme of the embodiment of the present invention was realized in：
The embodiment of the present invention provides a kind of photoelectric conversion device, including：
Beam collection component, for receive wavelength within a predetermined range, with the first incident projecting beam of any angle, And it is output to light beam reflection subassembly；
The light beam reflection subassembly, for being all-trans to first projecting beam inside the light beam reflection subassembly Penetrate, form the first outgoing beam, be output to beam reception component；
The beam reception component, for receiving first outgoing beam, and by the luminous energy of first outgoing beam Be converted to electric energy.
In such scheme, the beam collection component, polytype optical thin film is set in a manner of multilayer covers, used In the first projection for controlling the beam collection component to export every kind of each self-corresponding wave-length coverage of type optical film Light beam, the first projection beamlet are the beamlet of first projecting beam.
In such scheme, the light beam reflection subassembly, including：
Covering, for receiving with the first incident projecting beam of first angle, and sandwich layer is output to second angle；
The sandwich layer, refractive index are more than the refractive index of the covering, for receiving with described in second angle input First projecting beam, and first projecting beam is acted on, form first outgoing beam.
In such scheme, the sandwich layer includes：
First plane and the second plane, for making first projecting beam in first plane and second plane After carrying out multiple total reflection in the space of composition, first outgoing beam is formed, is output to the beam reception component.
In such scheme, the beam reception component, including：
First beam reception sub-component, the light beam reflection subassembly is connected, for receiving with described in first direction outgoing First outgoing beam；
Second beam reception sub-component, the light beam reflection subassembly is connected, for receiving with described in second direction outgoing First outgoing beam.
In such scheme, the photoelectric conversion device is arranged in electronic equipment, by the luminous energy of first outgoing beam The electric energy be converted to is the power electronic equipment.
The embodiment of the present invention also provides a kind of opto-electronic conversion method, including：
Beam collection component receive wavelength within a predetermined range, with the first incident projecting beam of any angle；
After first projecting beam is output to light beam reflection subassembly, it is all-trans inside the light beam reflection subassembly Penetrate, form the first outgoing beam, be output to beam reception component；
First outgoing beam is acted on through the beam reception component, and the luminous energy of first outgoing beam is converted to Electric energy.
In such scheme, the beam collection component, polytype optical thin film, institute are set in a manner of multilayer covers State beam collection component receive wavelength within a predetermined range, with the first incident projecting beam of any angle, including：
The beam collection component is controlled to export the first of every kind of each self-corresponding wave-length coverage of type optical film Beamlet is projected, the first projection beamlet is the beamlet of first projecting beam.
In such scheme, the light beam reflection subassembly includes covering and sandwich layer, wherein the refractive index of the sandwich layer is more than institute State the refractive index of covering；
After first projecting beam is output to light beam reflection subassembly, it is all-trans inside the light beam reflection subassembly Penetrate, including：
After inciding the covering with the first incident projecting beam of first angle, the core is output to second angle Layer；First projecting beam acts on through the sandwich layer, forms first outgoing beam.
In such scheme, the sandwich layer includes the first plane and the second plane；
First projecting beam acts on through the sandwich layer, forms first outgoing beam, including：
First projecting beam is repeatedly all-trans in the space that first plane and second plane are formed After penetrating, first outgoing beam is formed, is output to the beam reception component.
In such scheme, the light-receiving component includes the first beam reception sub-component for connecting the light beam reflection subassembly With the second beam reception sub-component；
First outgoing beam is output to beam reception component, including：
The first beam reception sub-component is output to first outgoing beam that first direction is emitted, with second party The second beam reception sub-component is output to second outgoing beam of outgoing.
In such scheme, the beam reception component is arranged in electronic equipment, by the luminous energy of first outgoing beam The electric energy be converted to is the power electronic equipment.
In the embodiment of the present invention, beam collection component receive wavelength within a predetermined range, with any angle it is incident the One projecting beam, after first projecting beam carries out multiple total reflection in light beam reflection subassembly, the first outgoing beam is formed, The luminous energy of first outgoing beam is converted to electric energy by output to beam reception component, the beam reception component；It is in this way, logical Cross beam collection component and receive predetermined wavelength, with the first incident projecting beam of any angle, and through light beam reflection subassembly and light After beam receiving unit, in the case where beam reception component area is limited, remain to the luminous energy of first projecting beam is whole Electric energy is converted to, improves photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is the composition structural representation of the photoelectric conversion device of the embodiment of the present invention one；
Fig. 2 is the structural representation of planar waveguide of the embodiment of the present invention；
Fig. 3 is the handling process schematic diagram of the opto-electronic conversion method of the embodiment of the present invention two.
Embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Embodiment one
The embodiment of the present invention one provides a kind of photoelectric conversion device, the composition structure of the photoelectric conversion device, such as Fig. 1 institutes Show, including：
Beam collection component 10, for receive wavelength within a predetermined range, with the first incident projection light of any angle Beam, and first projecting beam is output to light beam reflection subassembly 11.It is worth noting that, beam collection component 10 is by incidence The first projecting beam transmit as much as possible without reflect.
In an embodiment, the function of the beam collection component 10 can be realized by holographic grating；By The whole surface covering multilayer optical film of holographic grating, every kind of optical thin film are transmissive to its each corresponding wavelength scope (example Such as specific wavelength) the first incident beamlets.
Specifically, by the method for holographic, interference fringe caused by laser is exposed on dry plate, remembered on dry plate The interference fringes of plane waves of the row of record two with certain angle, it is developed, fixing etc. handle after holographic grating is made.It is complete making During ceasing grating, it can realize that holographic grating is received with random angle by controlling exposure angle of the interference fringe on dry plate Spend the first incident projecting beam.In other embodiments, other optical elements, such as multi-layered antireflection coating can also be used real The total transmissivity of existing first projecting beam, specifically, such as wavelength of the first projection beamlet in anti-reflection film is equal to anti-reflection film Whens 4 times of optical thickness, the first projection beamlet just can realize total transmissivity by the anti-reflection film, by setting different thickness The anti-reflection film of degree can realize the total transmissivity of the beamlet of different wave length in the first projecting beam.
Light beam reflection subassembly 11, for being all-trans to first projecting beam inside the light beam reflection subassembly Penetrate, form the first outgoing beam, be output to beam reception component 12.
In an embodiment, the function of the light beam reflection subassembly 11 can be realized by planar waveguide；The flat board The structure of waveguide, as shown in Fig. 2 including sandwich layer 110 and covering；Wherein, covering includes：Top covering 111 and under-clad layer 112； That is the planar waveguide is made up of three layers of uniform dielectric, first layer uniform dielectric is top covering 111, Jie of top covering 111 Electric constant is n3；Second layer uniform dielectric is sandwich layer 110, and the dielectric constant of sandwich layer 110 is n1；Third layer uniform dielectric is lower bag Layer 112, the dielectric constant of under-clad layer 112 is n2；n1＞ n2＞ n3；It so, it is possible so that light beam is concentrated in sandwich layer 110 transmits, Thus play a part of guided wave.
Specifically, the top covering 111 in the covering is received with the first incident projecting beam of first angle, due to sandwich layer 110 dielectric constant is n1More than the dielectric constant n of top covering3, therefore, the first projecting beam incides sandwich layer with second angle 110, and multiple total reflection occurs in the space that the first plane of sandwich layer 110 and the second plane are formed, form the first emergent light Beam, it is output to the beam reception component 12.
The beam reception component 12, for receiving first outgoing beam, and by the light of first outgoing beam Electric energy can be converted to.
The beam reception component 12, including：
First beam reception sub-component 121, the light beam reflection subassembly is connected, for receiving the institute being emitted with first direction State the first outgoing beam；The first direction is towards the direction of the first beam reception sub-component.In a way of example In, the first beam reception sub-component 121 connects parallel the first plane and the second plane of sandwich layer 110 in vertical manner.
Second beam reception sub-component 122, the light beam reflection subassembly is connected, for receiving the institute being emitted with second direction State the first outgoing beam；The second direction is towards the direction of the second beam reception sub-component.In a way of example In, the second beam reception sub-component 122 connects parallel the first plane and the second plane of sandwich layer 110 in vertical manner.
In an embodiment, the beam reception component 12 can be realized by photovoltaic panel.Pass through the embodiment of the present invention In beam collection component 10 and light beam reflection subassembly 11, the effective area of beam reception component 12 also may be used in the case of less To be collected into more luminous energy.
In the embodiment of the present invention, the photoelectric conversion device is arranged on inside the display screen of electronic equipment, by described The electric energy that the luminous energy of one outgoing beam is changed is the power electronic equipment.First projecting beam can be from the external world Natural light or the interior lights from electronic equipment, when beam collection component 10 is provided towards in the electronic equipment During portion, the backlight that the beam collection component 10 can also collect the electronic equipment to charge for the electronic equipment, to enter One step saves.
The electronic equipment includes but is not limited to：Smart mobile phone, tablet personal computer, notebook computer or Wearable are (such as Intelligent glasses, intelligent watch etc.).
In the embodiment of the present invention, beam collection component receive wavelength within a predetermined range, with any angle it is incident the One projecting beam, after first projecting beam carries out multiple total reflection in light beam reflection subassembly, the first outgoing beam is formed, The luminous energy of first outgoing beam is converted to electric energy by output to beam reception component, the beam reception component；It is in this way, logical Cross beam collection component and receive predetermined wavelength, with the first incident projecting beam of any angle, and through light beam reflection subassembly and light After beam receiving unit, the luminous energy of first projecting beam is all converted into electric energy, improves photoelectric transformation efficiency.
Embodiment two
Based on above-mentioned photoelectric conversion device, the embodiment of the present invention provides a kind of opto-electronic conversion method, the realization of methods described Process, as shown in figure 3, comprising the following steps：
Step S101, beam collection component receive wavelength within a predetermined range, with the first incident projection of any angle Light beam；It is worth noting that, beam collection component transmits the first projecting beam of incidence without reflecting as much as possible.
Here, the function of the beam collection component 10 can be realized by holographic grating；By in the whole of holographic grating Surface covers multilayer optical film, every kind of optical thin film be transmissive to its each corresponding wavelength scope (such as specific wavelength) the One incident beamlets, first incident beamlets are a beamlet of the first incident beam.
Specifically, by the method for holographic, interference fringe caused by laser is exposed on dry plate, remembered on dry plate The interference fringes of plane waves of the row of record two with certain angle, it is developed, fixing etc. handle after holographic grating is made.It is complete making During ceasing grating, it can realize that holographic grating is received with random angle by controlling exposure angle of the interference fringe on dry plate Spend the first incident projecting beam.
In other embodiments, other optical elements, such as multi-layered antireflection coating can also be used to realize the first projection light The total transmissivity of beam, specifically, such as wavelength of the first projection beamlet in anti-reflection film is equal to 4 times of the optical thickness of anti-reflection film When, the first projection beamlet just can realize total transmissivity by the anti-reflection film, by setting the anti-reflection film of different-thickness can To realize the total transmissivity of the beamlet of different wave length in the first projecting beam.
Step S102, after first projecting beam is output to light beam reflection subassembly, inside the light beam reflection subassembly It is totally reflected, forms the first outgoing beam, be output to beam reception component；
In the embodiment of the present invention, the function of the light beam reflection subassembly 11 can be realized by planar waveguide；The planar waveguide Structure, as shown in Fig. 2 including sandwich layer 110 and covering；Wherein, covering includes：Top covering 111 and under-clad layer 112；Namely Say, the planar waveguide is made up of three layers of uniform dielectric, and first layer uniform dielectric is top covering 111, and the dielectric of top covering 111 is normal Number is n3；Second layer uniform dielectric is sandwich layer 110, and the dielectric constant of sandwich layer 110 is n1；Third layer uniform dielectric is under-clad layer 112, the dielectric constant of under-clad layer 112 is n2；n1＞ n2＞ n3；It so, it is possible so that light beam is concentrated in sandwich layer 110 transmits, because And play a part of guided wave.
Specifically, the top covering in the covering is received with the first incident projecting beam of first angle, due to sandwich layer 110 Dielectric constant be n1More than the dielectric constant n of top covering3, therefore, the first projecting beam incides sandwich layer with second angle, and Multiple total reflection occurs in the space that the first plane of sandwich layer and the second plane are formed, forms the first outgoing beam, is output to The beam reception component.
Certainly, the realization of the function of the light beam reflection subassembly 11 is not limited to the flat board ripple in the bright embodiment of we Lead, the function of the light beam reflection subassembly 11 can also be realized by other kinds of optical element.
Step S103, first outgoing beam act on through the beam reception component, by first outgoing beam Luminous energy is converted to electric energy；
Specifically, the beam reception component include the first beam reception sub-component for connecting the light beam reflection subassembly and Second beam reception component；The first beam reception subgroup is output to first outgoing beam that first direction is emitted Part, the second beam reception sub-component is output to second outgoing beam that second direction is emitted.
In an embodiment, the beam reception component is arranged in electronic equipment, by first emergent light The electric energy that the luminous energy of beam is changed is the power electronic equipment；The beam reception component can be realized by photovoltaic panel.Described first Projecting beam can be the natural light from the external world or the interior lights from electronic equipment, when beam collection component 10 When being provided towards the electronic equipment internal, the backlight that the beam collection component 10 can also collect the electronic equipment is come Charged for the electronic equipment, further to save.
The electronic equipment includes but is not limited to：Smart mobile phone, tablet personal computer, notebook computer or Wearable are (such as Intelligent glasses, intelligent watch etc.).
The foregoing is only a specific embodiment of the invention, but protection scope of the present invention is not limited thereto, any Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be based on the protection scope of the described claims.

Claims (12)

  1. A kind of 1. photoelectric conversion device, it is characterised in that including：
    Beam collection component, for receive wavelength within a predetermined range, with the first incident projecting beam of any angle, it is and defeated Go out to light beam reflection subassembly；
    The light beam reflection subassembly, for being totally reflected to first projecting beam inside the light beam reflection subassembly, The first outgoing beam is formed, is output to beam reception component；
    The beam reception component, changed for receiving first outgoing beam, and by the luminous energy of first outgoing beam For electric energy.
  2. 2. device according to claim 1, it is characterised in that
    The beam collection component, polytype optical thin film is set in a manner of multilayer covers, for controlling the light beam Collection assembly exports the first projection beamlet of every kind of each self-corresponding wave-length coverage of type optical film, and described first throws Penetrate the beamlet that beamlet is first projecting beam.
  3. 3. device according to claim 1, it is characterised in that
    The light beam reflection subassembly, including：
    Covering, for receiving with the first incident projecting beam of first angle, and sandwich layer is output to second angle；
    The sandwich layer, refractive index are more than the refractive index of the covering, for receiving with described the first of second angle input Projecting beam, and first projecting beam is acted on, form first outgoing beam.
  4. 4. device according to claim 3, it is characterised in that the sandwich layer includes：
    First plane and the second plane, for making first projecting beam be formed in first plane and second plane Space in carry out multiple total reflection after, form first outgoing beam, be output to the beam reception component.
  5. 5. device according to claim 1, it is characterised in that
    The beam reception component, including：
    First beam reception sub-component, the light beam reflection subassembly is connected, for receiving with described the first of first direction outgoing Outgoing beam；
    Second beam reception sub-component, the light beam reflection subassembly is connected, for receiving with described the first of second direction outgoing Outgoing beam.
  6. 6. device according to claim 1, it is characterised in that the photoelectric conversion device is arranged in electronic equipment, will The electric energy that the luminous energy of first outgoing beam is changed is the power electronic equipment.
  7. A kind of 7. opto-electronic conversion method, it is characterised in that including：
    Beam collection component receive wavelength within a predetermined range, with the first incident projecting beam of any angle；
    After first projecting beam is output to light beam reflection subassembly, it is totally reflected inside the light beam reflection subassembly, shape Into the first outgoing beam, beam reception component is output to；
    First outgoing beam is acted on through the beam reception component, and the luminous energy of first outgoing beam is converted into electricity Energy.
  8. 8. according to the method for claim 7, it is characterised in that the beam collection component, set in a manner of multilayer covers Put polytype optical thin film, the beam collection component receive wavelength within a predetermined range, it is incident with any angle First projecting beam, including：
    The beam collection component is controlled to export the first projection of every kind of each self-corresponding wave-length coverage of type optical film Beamlet, the first projection beamlet are the beamlet of first projecting beam.
  9. 9. according to the method for claim 7, it is characterised in that the light beam reflection subassembly includes covering and sandwich layer, wherein The refractive index of the sandwich layer is more than the refractive index of the covering；
    After first projecting beam is output to light beam reflection subassembly, it is totally reflected, is wrapped inside the light beam reflection subassembly Include：
    After inciding the covering with the first incident projecting beam of first angle, the sandwich layer is output to second angle；Institute State the first projecting beam to act on through the sandwich layer, form first outgoing beam.
  10. 10. according to the method for claim 9, it is characterised in that the sandwich layer includes the first plane and the second plane；
    First projecting beam acts on through the sandwich layer, forms first outgoing beam, including：
    After first projecting beam carries out multiple total reflection in the space that first plane and second plane are formed, First outgoing beam is formed, is output to the beam reception component.
  11. 11. according to the method for claim 7, it is characterised in that the light-receiving component includes connecting the light beam reflection The the first beam reception sub-component and the second beam reception sub-component of component；
    First outgoing beam is output to beam reception component, including：
    The first beam reception sub-component is output to first outgoing beam that first direction is emitted, gone out with second direction Second outgoing beam penetrated is output to the second beam reception sub-component.
  12. 12. according to the method for claim 7, it is characterised in that the beam reception component is arranged in electronic equipment, will The electric energy that the luminous energy of first outgoing beam is changed is the power electronic equipment.
CN201710516371.9A 2017-06-29 2017-06-29 A kind of photoelectric conversion device, method and apparatus Pending CN107346793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710516371.9A CN107346793A (en) 2017-06-29 2017-06-29 A kind of photoelectric conversion device, method and apparatus

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Application Number Priority Date Filing Date Title
CN201710516371.9A CN107346793A (en) 2017-06-29 2017-06-29 A kind of photoelectric conversion device, method and apparatus

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Publication Number Publication Date
CN107346793A true CN107346793A (en) 2017-11-14

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101702953A (en) * 2007-04-17 2010-05-05 特拉太阳全息摄影西班牙有限公司 Holographic photovoltaic (HEPV) solar energy module that strengthens
WO2010023657A3 (en) * 2008-08-26 2010-08-26 Greensun Energy Ltd. Luminescent solar concentration
US20120138144A1 (en) * 2009-11-18 2012-06-07 Sharp Kabushiki Kaisha Solar cell module and solar power generating apparatus
US20130025679A1 (en) * 2009-11-25 2013-01-31 Sharp Kabushiki Kaisha Solar cell module and solar power generation device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101702953A (en) * 2007-04-17 2010-05-05 特拉太阳全息摄影西班牙有限公司 Holographic photovoltaic (HEPV) solar energy module that strengthens
WO2010023657A3 (en) * 2008-08-26 2010-08-26 Greensun Energy Ltd. Luminescent solar concentration
US20120138144A1 (en) * 2009-11-18 2012-06-07 Sharp Kabushiki Kaisha Solar cell module and solar power generating apparatus
US20130025679A1 (en) * 2009-11-25 2013-01-31 Sharp Kabushiki Kaisha Solar cell module and solar power generation device

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