CN107342361A - A kind of resistive formula memory based on bismuth ferrate nano particle and preparation method thereof - Google Patents
A kind of resistive formula memory based on bismuth ferrate nano particle and preparation method thereof Download PDFInfo
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- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 110
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 239000002105 nanoparticle Substances 0.000 title claims abstract description 68
- 230000015654 memory Effects 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 59
- 229920000642 polymer Polymers 0.000 claims abstract description 58
- 229910000859 α-Fe Inorganic materials 0.000 claims abstract description 31
- 239000002346 layers by function Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 13
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 claims description 12
- 238000002207 thermal evaporation Methods 0.000 claims description 11
- 238000004528 spin coating Methods 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 claims description 6
- 239000006228 supernatant Substances 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 4
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 4
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 4
- 229920002223 polystyrene Polymers 0.000 claims description 4
- 210000000498 stratum granulosum Anatomy 0.000 claims description 4
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 3
- 235000013339 cereals Nutrition 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 3
- 238000002525 ultrasonication Methods 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 239000013047 polymeric layer Substances 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 238000003860 storage Methods 0.000 abstract description 8
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000001066 destructive effect Effects 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 17
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
- 238000011161 development Methods 0.000 description 5
- 230000005621 ferroelectricity Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 3
- 229920006362 Teflon® Polymers 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000010287 polarization Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 206010016256 fatigue Diseases 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M methacrylate group Chemical group C(C(=C)C)(=O)[O-] CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910002554 Fe(NO3)3·9H2O Inorganic materials 0.000 description 1
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical group COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006471 dimerization reaction Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000002173 high-resolution transmission electron microscopy Methods 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 150000003503 terephthalic acid derivatives Chemical class 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The present invention discloses a kind of resistive formula memory based on bismuth ferrate nano particle and preparation method thereof, wherein, including flexible substrates and hearth electrode, first polymer layer, bismuth ferrite functional layer, the second polymer layer and top electrode on a flexible substrate are set gradually from bottom to up；First polymer layer and the second polymer layer are combined with bismuth ferrite functional layer has fabulous flex capability, and the high mechanicalness of device can be achieved；Size, shape and thickness by adjusting bismuth ferrate nano particle realize that the electric property of resistive formula memory and storage performance are controllable；The present invention, which provides resistive formula memory, has the feature performance benefits such as easy-regulating, high-mechanical property, high stability, have the features such as non-destructive of the characteristics such as the low-power consumption of Ferroelectric Random Access Memory, high read or write speed, radioresistance and resistive formula memory reads, be non-volatile, easily being integrated with CMOS concurrently, can be widely applied to the high-tech areas such as information technology, big data, wearable device.
Description
Technical field
The present invention relates to resistive formula memory area, more particularly to a kind of resistive formula storage based on bismuth ferrate nano particle
Device and preparation method thereof.
Background technology
With the development of information technology, the demand for storing mass data make it that requirement of the user to memory device performance is more next
It is higher, and the high-performance of memory device, low cost, easy processing are always the target that this field is constantly pursued.
Ferroelectric material because its polarization with two-way stable exists be commonly used for being made with non-volatile ferroelectricity with
Machine memory（Ferroelectric Random Access Memories, FeRAM) and ferro-electric field effect transistor
(Ferroelectric Field Effect Transistor, FeFET）；It is above-mentioned that both are technically respectively provided with quick reading
The features such as writing rate, radioresistance, low-power consumption, high-durability, but the ferroelectricity fatigue problem caused by its own polarization reversal,
Its service life is easily caused not grow.
Existing ferroelectric material is mostly complex metal oxide and has toxicity, causes it compatible with existing CMOS technology
Property is bad, and part ferroelectric material such as bismuth ferrite, then is received much concern because it has multiferroic and semiconductive, yet with
The change of middle ferro element valence state causes that expensive equipment such as pulsed laser deposition, organometallic chemistry must be used bismuth ferrite in itself
Vapour deposition, ald etc. can just prepare the bismuth ferrite of pure phase, and this undoubtedly adds its cost of manufacture.
In recent years, simple in construction, data are non-volatile, high reading because it has for the electroluminescent resistive formula memory of sandwich structure
The advantages that writing rate and the favor for enjoying researcher.How using ferroelectric material as the functional layer of resistive formula memory to be also
The Important Problems of current ferroelectricity field researcher research.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide a kind of resistance based on bismuth ferrate nano particle
Variant memory and preparation method thereof, it is intended to solve small existing ferroelectric memory fatiguability, capacity and CMOS poor compatibilities,
The problem of mechanical performance is poor.
Technical scheme is as follows：
A kind of resistive formula memory based on bismuth ferrate nano particle, wherein, including flexible substrates and set successively from bottom to up
Put hearth electrode, first polymer layer, bismuth ferrite functional layer, the second polymer layer and top electrode in the flexible substrates.
The described resistive formula memory based on bismuth ferrate nano particle, wherein, the bismuth ferrite functional layer is by bismuth ferrite
Nano particle is formed, and the pattern of the bismuth ferrate nano particle is one kind in circular, square or prismatic.
The described resistive formula memory based on bismuth ferrate nano particle, wherein, the material of the flexible substrates is moulded for PET
Material.
The described resistive formula memory based on bismuth ferrate nano particle, wherein, the hearth electrode and top electrode are by tool
Malleable metal material is formed, and the metal material is the one or more in Al, Cu, Au or Pt.
The described resistive formula memory based on bismuth ferrate nano particle, wherein, the thickness of the hearth electrode and top electrode
It is 80-100nm.
The described resistive formula memory based on bismuth ferrate nano particle, wherein, the first polymer layer and second gathers
The material of compound layer is one kind in polymethyl methacrylate, polystyrene or polyvinyl alcohol.
The preparation method of the described resistive formula memory based on bismuth ferrate nano particle, wherein, including step：
A, hearth electrode is prepared on a flexible substrate in the form of thermal evaporation；
B, spin on polymers forms first polymer layer on hearth electrode, is made annealing treatment afterwards；
C, spin coating bismuth ferrate nano particle solution well prepared in advance on first polymer layer after annealing, bismuth ferrite work(is formed
Ergosphere；
D, spin on polymers forms the second polymer layer on bismuth ferrate nano stratum granulosum；
E, top electrode is prepared on the second polymer layer in the form of thermal evaporation, the resistive formula based on bismuth ferrate nano particle is made
Memory.
The preparation method of the described resistive formula memory based on bismuth ferrate nano particle, wherein, it is right in the step B
The temperature that first polymer layer is made annealing treatment is 90-100 DEG C, time 1-2h.
The preparation method of the described resistive formula memory based on bismuth ferrate nano particle, wherein, before the step A also
Including：
A01, by bismuth nitrate and ferric nitrate dissolving in deionized water, add potassium hydroxide after stir 40-80min；
A02,1-3h is incubated to the solution after stirring under conditions of 200-250 DEG C, is cooled to room temperature；
A03, ultrasonication is carried out to the solution after cooling, finally carry out centrifugal treating, taking-up contains bismuth ferrate nano particle
Supernatant.
The preparation method of the described resistive formula memory based on bismuth ferrate nano particle, wherein, in the step A03
In, obtain various sizes of bismuth ferrate nano particle by adjusting centrifugal rotational speed.
Beneficial effect：Bismuth ferrate nano stratum granulosum and first polymer layer and the second polymer layer are formed Sanming City by the present invention
The active layer of structure is controlled, the first polymer layer and the second polymer layer are combined with bismuth ferrite functional layer has fabulous flexibility
Performance, the high mechanicalness of device can be achieved, adapt to the development of current wearable device；Pass through simple adjustment bismuth ferrate nano simultaneously
Size, shape and the thickness of particle capture bit number of points and charge/discharge energy to change, and finally realize resistive formula memory
Electric property and storage performance it is controllable；Therefore, the resistive formula storage utensil provided by the invention based on bismuth ferrate nano particle
Have the feature performance benefits such as easy-regulating, high-mechanical property, high stability, have concurrently the low-power consumption of Ferroelectric Random Access Memory, high read or write speed,
The features such as characteristics such as radioresistance and the non-destructive of resistive formula memory read, are non-volatile, easily being integrated with CMOS, can be extensive
Applied to high-tech areas such as information technology, big data, wearable devices, economy, social development to China have actively meaning
Justice.
Brief description of the drawings
Fig. 1 is a kind of structural representation of the resistive formula memory preferred embodiment based on bismuth ferrate nano particle of the present invention
Figure；
Fig. 2 is a kind of flow of the preparation method preferred embodiment of the resistive formula memory based on bismuth ferrate nano particle of the present invention
Figure.
Embodiment
The present invention provides a kind of resistive formula memory based on bismuth ferrate nano particle and preparation method thereof, to make the present invention
Purpose, technical scheme and effect it is clearer, clear and definite, the present invention is described in more detail below.It should be appreciated that this place
The specific embodiment of description only to explain the present invention, is not intended to limit the present invention.
Referring to Fig. 1, Fig. 1 is that a kind of resistive formula memory based on bismuth ferrate nano particle provided by the invention is preferably real
The structural representation of example is applied, as illustrated, wherein, including flexible substrates 10 and is successively set on the flexible base from bottom to up
Hearth electrode 20, first polymer layer 30, ferrous acid functional layer 40, the second polymer layer 50 and top electrode 60 on bottom 10.
Specifically, in the present invention, the bismuth ferrite functional layer 40 is, the iron granuloplastic by bismuth ferrate nano
Sour bismuth nano particle is that one kind can show ferroelectricity and ferromagnetic single phase multi-iron material simultaneously at room temperature；Bismuth ferrite is received
Rice grain has oblique parallelepiped's perovskite structure of distortion（Space group number is R3c）, (ferroelectrie Curie temperature is ferroelectric order
1103K), and energy gapE g About 2.2 eV, it is set to realize that light excites under visible light；
Further, the theoretical residual polarization value of the bismuth ferrate nano particleP r 90 μ C/cm can be reached2, close to lead zirconate titanate
PZT performance, and become the active material of non-plumbum ferroelectric random access memory.Due to boundary effect and quantum effect, ferrous acid
Bismuth nano particle shows the unique optical properties and electric property better than two-dimensional material.
The pattern of the bismuth ferrate nano particle is one kind in circular, square or prismatic
Based on characteristic possessed by bismuth ferrate nano particle, bismuth ferrite functional layer is clipped in first by the present invention with the structure of sandwich
Between polymeric layer and the second polymer layer, the active layer of resistive formula memory is formed；By simply adjusting bismuth ferrate nano
Size, shape and the thickness of particle capture bit number of points and charge/discharge energy to change it, and the electricity of memory can be achieved
Performance and storage performance are controllable；Further, the first polymer layer and the second polymer layer can be very good bismuth ferrite
Functional layer protects, and so as to prevent bismuth ferrite functional layer from being contacted with the water oxygen in air, directly improves the stability of device.
It is preferred that the pattern of the bismuth ferrate nano particle is one kind in circular, square or prismatic；Specifically,
For the bismuth ferrate nano particle synthesized, conventional microtechnic can be used：Such as AFM（AFM）, scanning electricity
Sub- microscope（SEM）, transmission electron microscope（TEM）And high resolution transmission electron microscope（HRTEM）To characterize material
Dimension and pattern.
Further, in order to strengthen the flex capability of resistive formula memory, the material of the present invention preferably flexible substrates is
PET, PET are called poly terephthalic acid class plastics, its molecular structure high degree of symmetry, have certain crystalline orientation energy
Power, so with higher filming performance；The present invention uses flexible substrates of the PET as resistive formula memory, not only may be used
Strengthen its flex capability, additionally it is possible to strengthen its mechanical strength.
Further, in the present invention, the hearth electrode and top electrode are formed by having malleable metal material, institute
Metal material is stated as the one or more in Al, Cu, Au or Pt；It is preferred that the thickness of the hearth electrode and top electrode is 80-
100nm。
It is preferred that in the present invention, the material of the first polymer layer and the second polymer layer is polymethylacrylic acid
One kind in methyl esters, polystyrene or polyvinyl alcohol；The bismuth ferrite functional layer is arranged on the first polymer layer and
Between dimerization nitride layer, the bismuth ferrite functional layer can be effectively avoided to be contacted with the water oxygen in air, so as to improve resistive formula
The stability of memory.Further, the first polymer layer and the second polymer layer are combined with bismuth ferrite functional layer and had
Fabulous flex capability, the high mechanicalness of device can be achieved.
Further, the present invention also provides a kind of preparation method of the resistive formula memory based on bismuth ferrate nano particle,
As shown in Fig. 2 wherein, including step：
S10, prepare hearth electrode on a flexible substrate in the form of thermal evaporation；
S20, spin on polymers forms first polymer layer on hearth electrode, is made annealing treatment afterwards；
Spin coating bismuth ferrate nano particle solution well prepared in advance on S30, first polymer layer after annealing, form bismuth ferrite
Functional layer；
S40, spin on polymers forms the second polymer layer in bismuth ferrite functional layer；
S50, top electrode is prepared on the second polymer layer in the form of thermal evaporation, the resistive based on bismuth ferrate nano particle is made
Formula memory.
Specifically, the present invention needs bismuth ferrate nano particle solution well prepared in advance before resistive formula memory is prepared,
The preparation process of the bismuth ferrate nano particle solution specifically includes：
S01, by bismuth nitrate and ferric nitrate dissolving in deionized water, add potassium hydroxide after stir 40-80min；
Exemplarily, respectively by bismuth nitrate (Bi (NO3)3·5H2O), ferric nitrate (Fe (NO3)3·9H2O) as synthesis bismuth ferrite
Bismuth source and source of iron, and dissolve in 40ml deionized water, add potassium hydroxide (KOH) solution that 10ml concentration is 4mol/L and arrive
In above-mentioned solution, and ensure mixed solution pH value be 12；Then magnetic stick stirring 60min is put into the mixed solution
Move into the lining of the teflon used in hydro-thermal method, be put into after sealing in the shell of stainless steel afterwards；
S02,1-3h is incubated to the solution after stirring under conditions of 200-250 DEG C, is cooled to room temperature；
Exemplarily, the solution is put into electronic constant incubator after 220 DEG C of insulations 2 hours with being furnace-cooled to room temperature；
S03, ultrasonication is carried out to the solution after cooling, finally carry out centrifugal treating, taking-up contains bismuth ferrate nano particle
Supernatant.
Exemplarily, the solution after the cooling is put into ionized water and be ultrasonically treated 30 minutes, make the ferrous acid in solution
Bismuth nano particle is sufficiently separated, and is then put it into centrifuge tube, and supernatant is taken after 10 minutes with certain rotating speed centrifugal treating
It is standby.
Further, in the step S03, various sizes of bismuth ferrate nano can be obtained by adjusting centrifugal rotational speed
Grain；Further, in the step S30, iron can adjust by the concentration and spin coating rotating speed that adjust bismuth ferrate nano particle
The thickness of sour bismuth functional layer, and thickness and size by adjusting bismuth ferrite functional layer can change it and capture bit number of points and fill
Electricity/discharge energy, so as to realize that the electric property of memory and storage performance are controllable.
Further, during hearth electrode and top electrode is prepared, the flexible substrates can be placed on 10-6Torr's
In vacuum environment, with 0.2 nm/s speed, metal material is prepared into metal foil in the form of thermal evaporation by mask plate
Film hearth electrode and metallic film top electrode.
Further, during the step S20, it is necessary to be moved back to it after first polymer layer is prepared
Fire processing, specifically, the temperature made annealing treatment to first polymer layer are 90-100 DEG C, time 1-2h.Pass through annealing
First polymer layer can tightly be attached to the hearth electrode surface by processing, avoid being rinsed when preparing more bismuth ferrite functional layers
Fall.
It is preferred that the performance of the resistive formula memory based on bismuth ferrate nano particle can also be by polymerizeing species
Class, the size of bismuth ferrate nano particle, the various combination of bismuth ferrite functional layer thickness and parameters are adjusted.
Below by specific embodiment to a kind of preparation of the resistive formula memory based on bismuth ferrate nano particle of the present invention
Method illustrates：
Embodiment 1
Bismuth nitrate and ferric nitrate are dissolved in 20ml deionized water respectively, it is molten then to add the NaOH that 5ml concentration is 5 mol/L
Liquid, moved into after being sufficiently stirred 2 hours in teflon liner, be subsequently placed into rustless steel container；With 220 DEG C of insulations 2 in constant temperature oven
Sample is taken out after hour, is moved into after supersound process in centrifuge tube, and with certain rotating speed centrifugal treating 15 minutes, takes out its supernatant
Liquid (bismuth ferrate nano particle solution) is standby；
The aluminium electrode for using 100nm thick on PET substrate forms metallic film in the form of thermal evaporation by mask plate
Hearth electrode, spin coating polymethyl methacrylate forms first polymer layer on metallic film hearth electrode, enters afterwards at 100 DEG C
Row annealing 1h；Spin coating bismuth ferrate nano particle solution on first polymer layer after annealing, form bismuth ferrite functional layer；
Spin coating polymethyl methacrylate forms the second polymer layer on bismuth ferrite functional layer；Will on the second polymer layer
Aluminium electrode thick 100nm forms metallic film top electrode in the form of thermal evaporation, finally gives based on bismuth ferrate nano particle
Resistive formula memory.
Embodiment 2
Bismuth nitrate and ferric nitrate are dissolved in 60ml deionized water respectively, it is molten then to add the KOH that 15ml concentration is 5 mol/L
Liquid, moved into after being sufficiently stirred 2 hours in teflon liner, be subsequently placed into rustless steel container；With 220 DEG C of insulations 1 in constant temperature oven
Sample is taken out after hour, is moved into after supersound process in centrifuge tube, and with certain rotating speed centrifugal treating 15 minutes, takes out its supernatant
Liquid (bismuth ferrate nano particle solution) is standby；
The form of thermal evaporation is used on PET substrate and uses mask plate deposition 100nm gold as hearth electrode, the bottom of at
Spin coating polystyrene forms first polymer layer on electrode, carries out annealing 1h at 100 DEG C afterwards；The first polymerization after annealing
Spin coating bismuth ferrate nano particle solution on nitride layer, form bismuth ferrite functional layer；The poly- methyl of spin coating on bismuth ferrite functional layer
Methyl acrylate forms the second polymer layer；Deposited on the second polymer layer using mask plate for model with thermal evaporation
100nm gold is used as top electrode, finally gives the resistive formula memory based on bismuth ferrate nano particle.
In summary, bismuth ferrate nano stratum granulosum and first polymer layer and the second polymer layer are formed Sanming City by the present invention
The active layer of structure is controlled, the first polymer layer and the second polymer layer are combined with bismuth ferrite functional layer has fabulous flexibility
Performance, the high mechanicalness of device can be achieved, adapt to the development of current wearable device；Pass through simple adjustment bismuth ferrate nano simultaneously
Size, shape and the thickness of particle capture bit number of points and charge/discharge energy to change, and finally realize resistive formula memory
Electric property and storage performance it is controllable；Therefore, the resistive formula storage utensil provided by the invention based on bismuth ferrate nano particle
Have the feature performance benefits such as easy-regulating, high-mechanical property, high stability, have concurrently the low-power consumption of Ferroelectric Random Access Memory, high read or write speed,
The features such as characteristics such as radioresistance and the non-destructive of resistive formula memory read, are non-volatile, easily being integrated with CMOS, can be extensive
Applied to high-tech areas such as information technology, big data, wearable devices, economy, social development to China have actively meaning
Justice.
It should be appreciated that the application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can
To be improved or converted according to the above description, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Protect scope.
Claims (10)
- A kind of 1. resistive formula memory based on bismuth ferrate nano particle, it is characterised in that including flexible substrates and from it is lower to On be successively set on hearth electrode, first polymer layer, bismuth ferrite functional layer, the second polymer layer and top in the flexible substrates Electrode.
- 2. the resistive formula memory according to claim 1 based on bismuth ferrate nano particle, it is characterised in that the ferrous acid Bismuth functional layer is formed by bismuth ferrate nano particle, and the pattern of the bismuth ferrate nano particle is in circular, square or prismatic It is a kind of.
- 3. the resistive formula memory according to claim 1 based on bismuth ferrate nano particle, it is characterised in that the flexibility The material of substrate is PET.
- 4. the resistive formula memory according to claim 1 based on bismuth ferrate nano particle, it is characterised in that the bottom electricity Pole and top electrode are formed by having malleable metal material, and the metal material is one kind or more in Al, Cu, Au or Pt Kind.
- 5. the resistive formula memory according to claim 1 based on bismuth ferrate nano particle, it is characterised in that the bottom electricity The thickness of pole and top electrode is 80-100nm.
- 6. the resistive formula memory according to claim 1 based on bismuth ferrate nano particle, it is characterised in that described first The material of polymeric layer and the second polymer layer is one kind in polymethyl methacrylate, polystyrene or polyvinyl alcohol.
- 7. a kind of preparation method of resistive formula memory based on bismuth ferrate nano particle as described in claim 1-6 is any, It is characterised in that it includes step：A, hearth electrode is prepared on a flexible substrate in the form of thermal evaporation；B, spin on polymers forms first polymer layer on hearth electrode, is made annealing treatment afterwards；C, spin coating bismuth ferrate nano particle solution well prepared in advance on first polymer layer after annealing, form bismuth ferrite and receive Rice grain layer；D, spin on polymers forms the second polymer layer on bismuth ferrate nano stratum granulosum；E, top electrode is prepared on the second polymer layer in the form of thermal evaporation, the resistive formula based on bismuth ferrate nano particle is made Memory.
- 8. the preparation method of the resistive formula memory according to claim 7 based on bismuth ferrate nano particle, its feature exist In in the step B, the temperature made annealing treatment to first polymer layer is 90-100 DEG C, time 1-2h.
- 9. the preparation method of the resistive formula memory according to claim 7 based on bismuth ferrate nano particle, its feature exist In the step A also includes before：A01, by bismuth nitrate and ferric nitrate dissolving in deionized water, add potassium hydroxide after stir 40-80min；A02,1-3h is incubated to the solution after stirring under conditions of 200-250 DEG C, is cooled to room temperature；A03, ultrasonication is carried out to the solution after cooling, finally carry out centrifugal treating, taking-up contains bismuth ferrate nano particle Supernatant.
- 10. the preparation method of the resistive formula memory according to claim 9 based on bismuth ferrate nano particle, its feature exist In in the step A03, by adjusting the various sizes of bismuth ferrate nano particle of centrifugal rotational speed acquisition.
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|---|---|---|---|---|
| CN111987583A (en) * | 2020-09-01 | 2020-11-24 | 深圳大学 | Random laser and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311369A (en) * | 2008-04-21 | 2008-11-26 | 上海大学 | Method for preparing pure phase bismuth ferric crystallite |
| CN104326510A (en) * | 2014-10-21 | 2015-02-04 | 新疆大学 | Preparation method of multiferroic bismuth ferrite cubic nanoparticles |
| CN106783861A (en) * | 2016-12-21 | 2017-05-31 | 深圳大学 | A kind of flexible non-volatile type memorizer and preparation method based on black phosphorus quantum dot |
-
2017
- 2017-06-26 CN CN201710494044.8A patent/CN107342361A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101311369A (en) * | 2008-04-21 | 2008-11-26 | 上海大学 | Method for preparing pure phase bismuth ferric crystallite |
| CN104326510A (en) * | 2014-10-21 | 2015-02-04 | 新疆大学 | Preparation method of multiferroic bismuth ferrite cubic nanoparticles |
| CN106783861A (en) * | 2016-12-21 | 2017-05-31 | 深圳大学 | A kind of flexible non-volatile type memorizer and preparation method based on black phosphorus quantum dot |
Non-Patent Citations (1)
| Title |
|---|
| SHIROLKAR MANDAR M.,ET AL: "Tunable multiferroic and bistable/complementary resistive switching properties of dilutely Li-doped BiFeO3 nanoparticles: an effect of aliovalent substitution", 《NANOSCALE》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111987583A (en) * | 2020-09-01 | 2020-11-24 | 深圳大学 | Random laser and preparation method and application thereof |
| CN111987583B (en) * | 2020-09-01 | 2021-08-13 | 深圳大学 | Random laser and preparation method and application thereof |
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