CN107342212A - 一种电离源系统、氢原子频标 - Google Patents
一种电离源系统、氢原子频标 Download PDFInfo
- Publication number
- CN107342212A CN107342212A CN201710586714.9A CN201710586714A CN107342212A CN 107342212 A CN107342212 A CN 107342212A CN 201710586714 A CN201710586714 A CN 201710586714A CN 107342212 A CN107342212 A CN 107342212A
- Authority
- CN
- China
- Prior art keywords
- ionization source
- source system
- hole
- negative electrode
- positive electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 18
- 239000010703 silicon Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 230000008094 contradictory effect Effects 0.000 claims abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical group [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 3
- 239000007924 injection Substances 0.000 claims description 3
- 150000002431 hydrogen Chemical class 0.000 abstract description 3
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 208000002352 blister Diseases 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 239000004047 hole gas Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
- H01J49/14—Ion sources; Ion guns using particle bombardment, e.g. ionisation chambers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710586714.9A CN107342212B (zh) | 2017-07-18 | 2017-07-18 | 一种电离源系统、氢原子频标 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710586714.9A CN107342212B (zh) | 2017-07-18 | 2017-07-18 | 一种电离源系统、氢原子频标 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107342212A true CN107342212A (zh) | 2017-11-10 |
CN107342212B CN107342212B (zh) | 2019-05-10 |
Family
ID=60219179
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710586714.9A Active CN107342212B (zh) | 2017-07-18 | 2017-07-18 | 一种电离源系统、氢原子频标 |
Country Status (1)
Country | Link |
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CN (1) | CN107342212B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112236840A (zh) * | 2018-06-21 | 2021-01-15 | 英国质谱公司 | 离子源 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003091864A1 (fr) * | 2002-04-25 | 2003-11-06 | Nippon Sogo Seisaku Co., Ltd. | Traitement de calcul de donnees faisant appel a un oscillateur de reference pour un dispositif numerique et procede de transmission/enregistrement/reproduction |
CN101036213A (zh) * | 2004-08-02 | 2007-09-12 | 奥斯通有限公司 | 离子迁移率谱仪 |
CN101626239A (zh) * | 2008-07-09 | 2010-01-13 | 中国科学院半导体研究所 | 适合于芯片集成的被动型铷原子频标 |
CN201569869U (zh) * | 2009-10-30 | 2010-09-01 | 中国科学院上海天文台 | 主动型氢原子钟的真空装置 |
CN101882552A (zh) * | 2004-08-02 | 2010-11-10 | 奥斯通有限公司 | 离子迁移率谱仪 |
CN102749839A (zh) * | 2011-04-18 | 2012-10-24 | 中国科学院上海天文台 | 氢原子钟电离源系统 |
-
2017
- 2017-07-18 CN CN201710586714.9A patent/CN107342212B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003091864A1 (fr) * | 2002-04-25 | 2003-11-06 | Nippon Sogo Seisaku Co., Ltd. | Traitement de calcul de donnees faisant appel a un oscillateur de reference pour un dispositif numerique et procede de transmission/enregistrement/reproduction |
CN101036213A (zh) * | 2004-08-02 | 2007-09-12 | 奥斯通有限公司 | 离子迁移率谱仪 |
CN101882552A (zh) * | 2004-08-02 | 2010-11-10 | 奥斯通有限公司 | 离子迁移率谱仪 |
CN101626239A (zh) * | 2008-07-09 | 2010-01-13 | 中国科学院半导体研究所 | 适合于芯片集成的被动型铷原子频标 |
CN201569869U (zh) * | 2009-10-30 | 2010-09-01 | 中国科学院上海天文台 | 主动型氢原子钟的真空装置 |
CN102749839A (zh) * | 2011-04-18 | 2012-10-24 | 中国科学院上海天文台 | 氢原子钟电离源系统 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112236840A (zh) * | 2018-06-21 | 2021-01-15 | 英国质谱公司 | 离子源 |
CN112236840B (zh) * | 2018-06-21 | 2024-03-08 | 英国质谱公司 | 离子源 |
Also Published As
Publication number | Publication date |
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CN107342212B (zh) | 2019-05-10 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant after: Shanghai Xin Shi Fang Technology Co.,Ltd. Address before: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant before: SHANGHAI SHIFANG TECHNOLOGY CO.,LTD. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Liu Shanmin Inventor after: Zhu Jianjun Inventor after: Wu Lingling Inventor before: Liu Shanmin |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 201207 Shanghai City, Pudong New Area free trade zone fanchun Road No. 400 Building 1 layer 3 Patentee after: SHANGHAI SHIFANG TECHNOLOGY Co.,Ltd. Address before: 201207 Shanghai City, Pudong New Area free trade zone fanchun Road No. 400 Building 1 layer 3 Patentee before: Shanghai Xin Shi Fang Technology Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20231130 Address after: Room 118, building 20, No. 1-42, Lane 83, Hongxiang North Road, Lingang New Area, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Shanghai Guanglian Electronic Technology Co.,Ltd. Address before: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Patentee before: SHANGHAI SHIFANG TECHNOLOGY CO.,LTD. |