CN107332561A - 一种信号探询装置、氢原子频标 - Google Patents
一种信号探询装置、氢原子频标 Download PDFInfo
- Publication number
- CN107332561A CN107332561A CN201710586715.3A CN201710586715A CN107332561A CN 107332561 A CN107332561 A CN 107332561A CN 201710586715 A CN201710586715 A CN 201710586715A CN 107332561 A CN107332561 A CN 107332561A
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- China
- Prior art keywords
- signal
- hydrogen atom
- piezoelectric membrane
- inquires
- bottom electrode
- Prior art date
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- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 239000012528 membrane Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 230000007704 transition Effects 0.000 claims abstract description 14
- 241000931526 Acer campestre Species 0.000 claims abstract description 5
- 230000005283 ground state Effects 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 230000008878 coupling Effects 0.000 abstract description 7
- 238000010168 coupling process Methods 0.000 abstract description 7
- 238000005859 coupling reaction Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 8
- 239000001257 hydrogen Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003467 diminishing effect Effects 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000007885 magnetic separation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/26—Automatic control of frequency or phase; Synchronisation using energy levels of molecules, atoms, or subatomic particles as a frequency reference
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710586715.3A CN107332561B (zh) | 2017-07-18 | 2017-07-18 | 一种信号探询装置、氢原子频标 |
Applications Claiming Priority (1)
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CN201710586715.3A CN107332561B (zh) | 2017-07-18 | 2017-07-18 | 一种信号探询装置、氢原子频标 |
Publications (2)
Publication Number | Publication Date |
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CN107332561A true CN107332561A (zh) | 2017-11-07 |
CN107332561B CN107332561B (zh) | 2021-02-26 |
Family
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Family Applications (1)
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CN201710586715.3A Active CN107332561B (zh) | 2017-07-18 | 2017-07-18 | 一种信号探询装置、氢原子频标 |
Country Status (1)
Country | Link |
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CN (1) | CN107332561B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076890A (ja) * | 2000-08-31 | 2002-03-15 | National Institute Of Advanced Industrial & Technology | 原子周波数標準器 |
CN102545827A (zh) * | 2012-01-04 | 2012-07-04 | 华为技术有限公司 | 薄膜体声波谐振器、通信器件和射频模块 |
CN102804436A (zh) * | 2010-03-25 | 2012-11-28 | 日立电线株式会社 | 压电薄膜器件和压电薄膜装置 |
CN103414446A (zh) * | 2013-08-27 | 2013-11-27 | 张家港恩达通讯科技有限公司 | 薄膜体声波谐振器及其制备方法 |
CN105703732A (zh) * | 2016-01-18 | 2016-06-22 | 佛山市艾佛光通科技有限公司 | 一种基于单晶AlN的薄膜体声波谐振器制备方法 |
CN105897211A (zh) * | 2016-05-18 | 2016-08-24 | 华南理工大学 | 多谐振模式的薄膜体声波谐振器及其制备方法和滤波器 |
-
2017
- 2017-07-18 CN CN201710586715.3A patent/CN107332561B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002076890A (ja) * | 2000-08-31 | 2002-03-15 | National Institute Of Advanced Industrial & Technology | 原子周波数標準器 |
CN102804436A (zh) * | 2010-03-25 | 2012-11-28 | 日立电线株式会社 | 压电薄膜器件和压电薄膜装置 |
CN102545827A (zh) * | 2012-01-04 | 2012-07-04 | 华为技术有限公司 | 薄膜体声波谐振器、通信器件和射频模块 |
CN103414446A (zh) * | 2013-08-27 | 2013-11-27 | 张家港恩达通讯科技有限公司 | 薄膜体声波谐振器及其制备方法 |
CN105703732A (zh) * | 2016-01-18 | 2016-06-22 | 佛山市艾佛光通科技有限公司 | 一种基于单晶AlN的薄膜体声波谐振器制备方法 |
CN105897211A (zh) * | 2016-05-18 | 2016-08-24 | 华南理工大学 | 多谐振模式的薄膜体声波谐振器及其制备方法和滤波器 |
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Publication number | Publication date |
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CN107332561B (zh) | 2021-02-26 |
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Address after: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant after: Shanghai Xin Shi Fang Technology Co.,Ltd. Address before: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant before: SHANGHAI SHIFANG TECHNOLOGY CO.,LTD. |
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CB02 | Change of applicant information | ||
CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Liu Shanmin Inventor after: Zhu Jianjun Inventor after: Wu Lingling Inventor before: Liu Shanmin |
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CB02 | Change of applicant information |
Address after: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant after: SHANGHAI SHIFANG TECHNOLOGY Co.,Ltd. Address before: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Applicant before: Shanghai Xin Shi Fang Technology Co.,Ltd. |
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TR01 | Transfer of patent right |
Effective date of registration: 20231207 Address after: Room 118, building 20, No. 1-42, Lane 83, Hongxiang North Road, Lingang New Area, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: Shanghai Guanglian Electronic Technology Co.,Ltd. Address before: 201207 Shanghai Pudong New Area free trade trial area, 1 spring 3, 400 Fang Chun road. Patentee before: SHANGHAI SHIFANG TECHNOLOGY CO.,LTD. |
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