CN107331677A - A kind of imaging sensor of multispectral imaging - Google Patents
A kind of imaging sensor of multispectral imaging Download PDFInfo
- Publication number
- CN107331677A CN107331677A CN201710590826.1A CN201710590826A CN107331677A CN 107331677 A CN107331677 A CN 107331677A CN 201710590826 A CN201710590826 A CN 201710590826A CN 107331677 A CN107331677 A CN 107331677A
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- China
- Prior art keywords
- film
- thang
- kng
- infrared
- imaging
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- 238000003384 imaging method Methods 0.000 title claims abstract description 25
- 238000000701 chemical imaging Methods 0.000 title claims abstract description 12
- 239000010408 film Substances 0.000 claims abstract description 55
- 230000003287 optical effect Effects 0.000 claims abstract description 24
- 239000010409 thin film Substances 0.000 claims abstract description 20
- 238000001914 filtration Methods 0.000 claims abstract description 18
- 239000011248 coating agent Substances 0.000 claims abstract description 11
- 238000000576 coating method Methods 0.000 claims abstract description 11
- 238000007747 plating Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 abstract description 6
- 238000001228 spectrum Methods 0.000 abstract description 3
- 238000007792 addition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of imaging sensor of multispectral imaging, in the chip surface of conventional image sensor, by way of plated film, the optical thin film of different qualities is added in different positions；The optical filtering film of different qualities includes the filter coating of specific wavelength or the thang-kng film of specific wavelength；Conventional image sensor includes charge coupled cell and cmos image sensor.Using multi-optical spectrum imaging technology, by the light that different objects are selected with suitable wavelength, specific particulars can just be obtained, solve the problem of portable sets such as mobile phone had not only needed visible images but also needed infrared image, the design of the portable sets such as mobile phone is simplified, and reduces cost.
Description
Technical field
The present invention relates to a kind of image sensor technologies, more particularly to a kind of imaging sensor of multispectral imaging.
Background technology
With continuing to develop for the technology of semiconductor chips and digital image processing techniques, and the portable set such as mobile phone
The application of individual's encryption, the biological characteristic such as fingerprint recognition, iris recognition realizes mobile phone unblock, especially bank paying, rainbow
The application of film identification, current solution is except original visible ray is taken pictures in addition to camera, it is necessary to which extra increase is single
Infrared camera carries out iris recognition, it is necessary to reserve infrared camera position on the portable set circuit board such as mobile phone, and
The perforate on the portable set panel such as mobile phone, adds cost.So simplifying design, reduce cost and be particularly important.
The content of the invention
It is an object of the invention to provide a kind of imaging sensor of multispectral imaging.
The purpose of the present invention is achieved through the following technical solutions：
The imaging sensor of the multispectral imaging of the present invention, in the chip surface of conventional image sensor, passes through plated film
Mode, the optical thin film of different qualities is added in different positions；
The optical filtering film of the different qualities includes the filter coating of specific wavelength or the thang-kng film of specific wavelength；
The conventional image sensor includes charge coupled cell and cmos image sensor.
As seen from the above technical solution provided by the invention, the image of multispectral imaging provided in an embodiment of the present invention
Sensor, using multi-optical spectrum imaging technology, by the light that different objects are selected with suitable wavelength, it is possible to obtain specific
Particulars, solve the problem of portable sets such as mobile phone had not only needed visible images but also needed infrared image, simplify hand
The design of the portable sets such as machine, and reduce cost.
Brief description of the drawings
Fig. 1 is the simplification structural representation of the imaging sensor of multispectral imaging provided in an embodiment of the present invention.
Fig. 2 a, Fig. 2 b, Fig. 2 c are respectively in image sensor surface diverse location to add optically thin in the embodiment of the present invention
The schematic diagram of film.
Embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this
The embodiment of invention, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to protection scope of the present invention.
The imaging sensor of the multispectral imaging of the present invention, its preferably embodiment is：
In the chip surface of conventional image sensor, by way of plated film, in different position addition different qualities
Optical thin film；
The optical filtering film of the different qualities includes the filter coating of specific wavelength or the thang-kng film of specific wavelength；
The conventional image sensor includes charge coupled cell and cmos image sensor.
The optical thin film of the different qualities includes the filter coating of specific wavelength and/or the thang-kng film of specific wavelength, including：
Visible ray filter coating and visible ray thang-kng film；
Infrared filtering film and infrared thang-kng film；
Ultraviolet filtering film and ultraviolet thang-kng film.
The chip surface in conventional image sensor adds the optical thin film of different qualities, including following any side
Formula：
Two layers of optical thin film of infrared thang-kng film and infrared filtering film is plated in imaging sensor；
The infrared filtering film in imaging sensor plating central region, other regions plate infrared thang-kng film；
Plate one or more layers different optical thin film in the multiple regions of imaging sensor, including it is infrared filtering film, infrared
Thang-kng film and ultraviolet thang-kng film.
Present invention application multi-optical spectrum imaging technology, by the light that different objects are selected with suitable wavelength, it is possible to obtain
Specific particulars are taken, the problem of portable sets such as mobile phone had not only needed visible images but also needed infrared image is solved,
The design of the portable sets such as mobile phone is simplified, and reduces cost.
Specific embodiment：
As shown in figure 1, the imaging sensor of the present invention includes herein below：
On traditional image sensor chip surface, by way of plated film, optical thin film is added.
Specifically, embodiments of the present invention are to add optical thin film 101 on traditional imaging sensor 10, wherein
102 be micro lens；103a, 103b, 103c difference representative sensor surface Red lightscreening plate, green color filter, blue color filter；
104 be photodiode；105 be silicon substrate material.
As shown in Fig. 2 a, Fig. 2 b, Fig. 2 c, the embodiment of the present invention by way of plated film, in different position additions not
With the optical thin film of characteristic, including herein below：
(1) as shown in Figure 2 a, highly it can plate optical thin film for h1 part in imaging sensor 201a, such as it is infrared
Thang-kng film (IR Pass Filter), optical thin film, such as infrared filtering film (IR Cut are plated in height for h2 part
Filter)；
(2) as shown in Figure 2 b, optical thin film can be plated in imaging sensor 201b cores m × n region, for example
Such as infrared filtering film (IR Cut Filter), other regions plate optical thin film, infrared thang-kng film (IR Pass
Filter)；
(3) as shown in Figure 2 c, different optical thin films can be plated in many regions of imaging sensor 201c, such as it is infrared
Filter coating (IR Cut Filter), infrared thang-kng film (IR Pass Filter) and ultraviolet thang-kng film (UV Pass Filter).
The optical thin film of different qualities described in the embodiment of the present invention, mainly includes the filter coating or specific wavelength of specific wavelength
Thang-kng film, it is main to include but is not limited to：
(1) visible ray filter coating and visible ray thang-kng film；
(2) infrared filtering film and infrared thang-kng film；
(3) ultraviolet filtering film and ultraviolet thang-kng film.
The foregoing is only a preferred embodiment of the present invention, but protection scope of the present invention be not limited thereto,
Any one skilled in the art is in the technical scope of present disclosure, the change or replacement that can be readily occurred in,
It should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Enclose and be defined.
Claims (3)
1. a kind of imaging sensor of multispectral imaging, it is characterised in that in the chip surface of conventional image sensor, pass through plating
The mode of film, the optical thin film of different qualities is added in different positions；
The optical filtering film of the different qualities includes the filter coating of specific wavelength or the thang-kng film of specific wavelength；
The conventional image sensor includes charge coupled cell and cmos image sensor.
2. the imaging sensor of multispectral imaging according to claim 1, it is characterised in that the optics of the different qualities
Film includes the filter coating of specific wavelength and/or the thang-kng film of specific wavelength, including：
Visible ray filter coating and visible ray thang-kng film；
Infrared filtering film and infrared thang-kng film；
Ultraviolet filtering film and ultraviolet thang-kng film.
3. the imaging sensor of multispectral imaging according to claim 2, it is characterised in that described in traditional images sensing
The chip surface of device adds the optical thin film of different qualities, including following any mode：
Two layers of optical thin film of infrared thang-kng film and infrared filtering film is plated in imaging sensor；
The infrared filtering film in imaging sensor plating central region, other regions plate infrared thang-kng film；
One or more layers different optical thin film, including infrared filtering film, infrared thang-kng are plated in the multiple regions of imaging sensor
Film and ultraviolet thang-kng film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710590826.1A CN107331677A (en) | 2017-07-19 | 2017-07-19 | A kind of imaging sensor of multispectral imaging |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710590826.1A CN107331677A (en) | 2017-07-19 | 2017-07-19 | A kind of imaging sensor of multispectral imaging |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107331677A true CN107331677A (en) | 2017-11-07 |
Family
ID=60226458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710590826.1A Pending CN107331677A (en) | 2017-07-19 | 2017-07-19 | A kind of imaging sensor of multispectral imaging |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107331677A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112492235A (en) * | 2020-12-15 | 2021-03-12 | 维沃移动通信有限公司 | Camera module and electronic equipment |
| CN112699767A (en) * | 2020-12-25 | 2021-04-23 | 北京思比科微电子技术股份有限公司 | Anti-counterfeiting optical fingerprint chip integrating multispectral and hyperspectral films |
| JP2021519511A (en) * | 2018-03-30 | 2021-08-10 | ヴィシャイ インターテクノロジー, インコーポレイテッドVishay Intertechnology, Inc. | Multispectral optical sensor |
| CN117855238A (en) * | 2024-02-20 | 2024-04-09 | 苏州多感科技有限公司 | Multispectral image sensor and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445427A (en) * | 2011-10-11 | 2012-05-09 | 孔令华 | Micro multi-spectral narrow-band remote sensing imaging system, and image acquisition system thereof |
| US20150312556A1 (en) * | 2012-11-23 | 2015-10-29 | Lg Electronics Inc. | Rgb-ir sensor, and method and apparatus for obtaining 3d image by using same |
| US20160064434A1 (en) * | 2014-09-03 | 2016-03-03 | Novatek Microelectronics Corp. | Color Filter Array and Image Receiving Method thereof |
-
2017
- 2017-07-19 CN CN201710590826.1A patent/CN107331677A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102445427A (en) * | 2011-10-11 | 2012-05-09 | 孔令华 | Micro multi-spectral narrow-band remote sensing imaging system, and image acquisition system thereof |
| US20150312556A1 (en) * | 2012-11-23 | 2015-10-29 | Lg Electronics Inc. | Rgb-ir sensor, and method and apparatus for obtaining 3d image by using same |
| US20160064434A1 (en) * | 2014-09-03 | 2016-03-03 | Novatek Microelectronics Corp. | Color Filter Array and Image Receiving Method thereof |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2021519511A (en) * | 2018-03-30 | 2021-08-10 | ヴィシャイ インターテクノロジー, インコーポレイテッドVishay Intertechnology, Inc. | Multispectral optical sensor |
| US11862648B2 (en) | 2018-03-30 | 2024-01-02 | Vishay Intertechnology, Inc. | Optoelectronic device arranged as a multi-spectral light sensor having a photodiode array with aligned light blocking layers and n-well regions |
| CN112492235A (en) * | 2020-12-15 | 2021-03-12 | 维沃移动通信有限公司 | Camera module and electronic equipment |
| CN112699767A (en) * | 2020-12-25 | 2021-04-23 | 北京思比科微电子技术股份有限公司 | Anti-counterfeiting optical fingerprint chip integrating multispectral and hyperspectral films |
| CN117855238A (en) * | 2024-02-20 | 2024-04-09 | 苏州多感科技有限公司 | Multispectral image sensor and preparation method thereof |
| CN117855238B (en) * | 2024-02-20 | 2024-06-14 | 苏州多感科技有限公司 | Multispectral image sensor and preparation method thereof |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20171107 |
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| RJ01 | Rejection of invention patent application after publication |