CN1073314A - Laminated optimiging new type film electroluminescence device - Google Patents
Laminated optimiging new type film electroluminescence device Download PDFInfo
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- CN1073314A CN1073314A CN 92105896 CN92105896A CN1073314A CN 1073314 A CN1073314 A CN 1073314A CN 92105896 CN92105896 CN 92105896 CN 92105896 A CN92105896 A CN 92105896A CN 1073314 A CN1073314 A CN 1073314A
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Abstract
The present invention relates to a kind of thin film electroluminescence opto-electronic device.Form by being deposited on charge carrier acceleration layer on the 1TO electro-conductive glass and luminescent layer and back electrode, composite acceleration layer comprises a low preliminary heating zone and High-Field acceleration layer.Luminescent layer can be sandwiched between the composite acceleration layer of two symmetrical deposits, both single layer structures, also between 2-4 luminescent layer stacks, the adjacent emissive layers folder with the luminescent layer overlaying structure of High-Field acceleration layer.The present invention can significantly reduce lasing threshold voltage, improve short-wave long light-emitting brightness and can widen control greatly, optimize the range of choice of the material of each critical process of electroluminescence, and can improve brightness, the acquisition blue-light-emitting of membrane electro luminescent device, realize colorize.
Description
The present invention relates to a kind of thin film electroluminescence opto-electronic device.
Since 1950's, electroluminescent technology and device have obtained development rapidly.The electroluminescent device of Chu Xianing is a powder electroluminescence device the earliest, is about to some and can electroluminescent dusty material is mingled in the medium and is coated on the electroluminescent device of making on the electro-conductive glass.Powder electroluminescence device is because its brightness is low, and the life-span is short and quiet gradually, and what replace it is the membrane electro luminescent device that adopts vacuum deposition technique to make.Particularly Inoguchi in 1974 has adopted the membrane electro luminescent device (list of references (1)) of double insulating layer sandwich structure, the brightness of membrane electro luminescent device and life-span one are jumped and reaches realistic scale.So-called two insulating blanked clamper core structure membrane electro luminescent devices are that luminescent layer is deposited between two insulating barriers and the capacitive film's electroluminescent device that forms.In nearly 20 years now, the research work of nearly all membrane electro luminescent device all launches based on this double insulating layer sandwich structure device, can reduce following three aspects substantially thenceforth:
The improvement of A, insulating barrier: remove and extensively adopt various insulating material (as Y
2O
3, HfO
2, SiO
2, Al
2O
3, Si
3N
4, Ta
2O
5And ferroelectric material PbTiO
3And a-BaTiO
3Deng) outside, also adopted composite insulation layer, with the dielectricity that improves insulating barrier and with the tack of ITO electro-conductive glass or back electrode, and improve and produce the just insulating barrier of electronics and the interface attitude of luminescent layer.
The improvement of B, luminescent layer: adopt different rare earth fluorides (as TbF
3, ErF
3, CeF
3, TmF
3, HoF
3Deng) as luminescence center, to increase its collisional excitation cross section and to obtain different colors.Except that adopting ZnS, also adopted other alkaline earth metal compounds (as SrS, CaS and BaS) as matrix, doping Eu(is red), the Ce(orchid) etc., to obtain different colors.
The improvement of C, film deposition art: adopted electron beam evaporation (e-beam) chemical vapor deposition (CVD), magnetron sputtering (M-Sputtering), atomic layer epitaxy (ALE), molecular beam epitaxy (MB) and Organometallic Chemistry gas deposition technologies such as (MOCVD) and L-B organic film etc.
Result through effort in nearly 20 years has only the EnS:Mn(orange yellow) commercialization, EnS:TbF
3Near commercialization, and such as CaS:Eu, the Y of redness
2O
3: Eu, EnS:SmF
3, green EnS:ErF
3And EnS:TbF
3, the EnS:TmF of blue look
3SrS:ce, F, the EnS:Pr of white, F, EnS:Pr, K, SrS:Ce, K, Eu etc. can not show a candle to EnS:Mn, and its brightness and life-span all do not reach the degree of practicability.Above-mentioned situation must impel people to rethink the reasonability of this double insulating layer sandwich structure.In fact, in this double insulating layer sandwich structure, do not have electric current to pass through in the insulating barrier on luminescent layer both sides, entire device is capacitive character, has kept one up to 10 in luminescent layer
6The electric field of V/cm, luminescent layer are actually under " prebreakdown " state work.In order to obtain sufficiently high electric field in luminescent layer, driving voltage usually will be more than 200V, and so high driving voltage has not only influenced the life-span and the reliability of device, and brings very big difficulty for the design of drive circuit and the suitability for industrialized production of device.In double insulating layer sandwich structure, electroluminescent three main processes (i.e. generation, the acceleration of charge carrier and the collision excitation of luminescence center of first electronics) are all carried out in same luminescent layer, because the collisional excitation cross section of luminescence center is to increase with the increase that excites carrier energy, therefore, in order to obtain enough big excitation cross-section, wish that the electric field of acceleration charge carrier is enough high.But then, some luminously might field quenching occur and make luminous dying down in High-Field.This contradiction can't overcome in double insulating layer sandwich structure, and this deadly defect of double insulating layer sandwich structure is likely and causes numerous EL phosphors, CL phosphor and PL phosphor that good electroluminescent basic reason can not be arranged.People such as F.Williams proposed once that charge carrier was quickened the imagination of being separated from the space that excites with luminescence center, and (list of references (2) (3) (4) (5) (6) was also explored corresponding structure, but do not demonstrate the superiority of these structures, do not obtain substantial progress, particularly do not having what progress aspect the brightness of raising short-wave long light-emitting.
The objective of the invention is the structure and the function corresponding material of membrane electro luminescent device are further improved, to improve its luminosity, particularly short-wave long light-emitting brightness, and widen control greatly, optimize the range of choice of the material of each critical process of electroluminescence, for the colorize of membrane electro luminescent device creates conditions.
To achieve these goals, the present invention is based on and quicken and the imagination that excites apart, adopts semiconductor functional material and set up preliminary heating zone, the composite acceleration layer or two that employing is made up of low " preheating " layer and High-Field acceleration layer goes on foot the insulating barrier in the acceleration layer replacement double insulating layer sandwich structure, a low preliminary heating zone adopts semi insulating material or semiconductor material with wide forbidden band, and the High-Field acceleration layer then adopts the wide bandgap semiconductor polar material.After composite acceleration layer replacement insulating barrier, charge carrier quickens to be carried out in different thin layers by apart with two processes of collision excitation of luminescence center, most of driving voltage falls on acceleration layer, on the one hand can effectively utilize extra electric field, thereby can make the luminescent layer pressure drop reduce to make electric field in the luminescent layer on the other hand less than its quencher field intensity.Particularly, the employing that low " preheating " and two steps of High-Field acceleration quicken both can obtain can reducing the energy loss in the transport process again than the thermionic energy that exceeds several times in the common structure, thereby improved the luminosity and the efficient of device.On the basis of two steps acceleration, further adopt the luminescent layer overlaying structure that comprises a plurality of luminescent layers, can increase electron source just.More luminescence center is excited, thereby further improves luminosity and efficient.Be described in further detail below in conjunction with the technical characterictic of specific embodiment laminated optimiging new type film electroluminescence device of the present invention.
Accompanying drawing 1 is the structural representation with membrane electro luminescent device of symmetrical deposit composite acceleration layer.
With reference to the accompanying drawings 1, laminated optimiging new type film electroluminescence device of the present invention is to constitute by being deposited on charge carrier acceleration layer on the ITO electro-conductive glass 1 and luminescent layer 2 and back electrode.The charge carrier acceleration layer comprises a low preliminary heating zone 3 and High-Field acceleration layer 4, and a low preliminary heating zone 3 can adopt semi insulating material or semiconductor material with wide forbidden band (as SIO), and 4 of High-Field acceleration layer can adopt the wide bandgap semiconductor polar material, and (as thickness is 20 ± 15nmSIO
2).Back electrode 5 can adopt silver or aluminum metal electrode, also can adopt the ITO conductive glass electrode.Composite acceleration layer both can take unsymmetric structure to be used for the dc pulse voltage driving, also can take symmetrical structure to be used for ac pulse voltage and drive.When adopting symmetrical structure, a low preliminary heating zone and High-Field acceleration layer symmetry are deposited on the both sides of luminescent layer, also are about to luminescent layer and are sandwiched between two High-Field acceleration layer of symmetrical deposit.
This have two the step acceleration layer structure in, the electronics that trap energy level from a low preliminary heating zone and interelectrode interfacial state and preliminary heating zone disengages at first is preheated acceleration and has certain energy in a low preliminary heating zone, the electronics conduction band that enters the High-Field acceleration layer is quickened by High-Field then, the hot electron that accelerates to upper state within its overshoot distance, promptly overflow the High-Field acceleration layer, enter luminescent layer, direct collision stimulated luminescence center.
Under normal conditions, only there is the luminescence center of 10-20% to be excited luminous.Therefore, increase just electron source and expansion luminescence center density or quantity, can improve luminous effectively.Consider this situation, can further adopt the luminescent layer overlaying structure that comprises a plurality of luminescent layers on the basis of two steps acceleration, promptly folder is with 2-4 luminescent layer between the composite acceleration layer of symmetrical deposit, and folder is with the High-Field acceleration layer between the adjacent emissive layers.In the luminescent layer overlaying structure, the electronics that enters the High-Field acceleration layer is those charge carriers that result from luminescent layer and High-Field acceleration layer interface attitude and " preheating " in luminescent layer.
The employing of composite acceleration layer structure has brought a series of good effect.At first, the major part of driving voltage is fallen on composite acceleration layer and is used to quicken charge carrier, and this just makes luminous threshold voltage to reduce to about 35V.Secondly, two steps quickened to make the energy addition, and may occur ejection status in the High-Field acceleration layer, and this all helps transporting of charge carrier, thereby can obtain to exceed than energy in the common structure hot electron of several times.Under the single-layer phosphor situation, if select Er for use
3+Green emission (
2H
11/2→
4I
15/2+
4S
3/2→
4I
15/2) and red emission (
2F
9/2→
4I
15/2) ratio R as the sign of carrier energy height, then the R value of composite acceleration layer structure is 48, and the R value of common structure only is 8
+8, and the former driving voltage is 80V, the latter's driving voltage is but up to 150V.Once more, adopt after the composite acceleration layer, the electric field in the luminescent layer is reduced, not only successfully solved the field quenching problem in the common structure, and high-octane charge carrier can make the range of choice of phosphor material widen greatly.If field quenching and carrier energy not high enough be the main difficulty of common structure devices colorize, the composite acceleration layer structure can be widely used in EL phosphor, CL phosphor and PL phosphor so.For example, EnS:CeF
3It is luminous to have obtained bright blue look in new construction.
Because the high thermionic energy brought of composite acceleration layer structure, lower carrier energy loss and big collisional excitation cross section can make the brightness of membrane electro luminescent device and efficient improve greatly, and create conditions for the colorize of membrane electro luminescent device.
List of references:
（1）T.Inoguchi et al，1974 SID，Digest（1974）84.
（2）F.Williams 1981 SID Digest，30（1981）
（3）D.J.Robbins，etal，1982 SID，（1982）130
（4）Y.Nakanishi，etal Springer Proceedings in phys.
Vol38（1989）65
（5）J.I.Paukove，J.oflum.40.41（1988）97
（6）H.J.Lozykowski，SpringerProceedings in phys.
Vol38（1989）60
Claims (4)
1, a kind of membrane electro luminescent device constitutes by being deposited on charge carrier acceleration layer on the ITO electro-conductive glass and luminescent layer and back electrode; The invention is characterized in that described charge carrier acceleration layer is composite acceleration layer or the two step acceleration layer that are made of a low preliminary heating zone and High-Field acceleration layer, a low preliminary heating zone adopts semi insulating material or semiconductor material with wide forbidden band, and the High-Field acceleration layer adopts the wide bandgap semiconductor polar material.
2, membrane electro luminescent device according to claim 1 is characterized in that described low preliminary heating zone adopts the SiO material; It is the Sio of 20 ± 15nm that described High-Field acceleration layer adopts thickness
2Material.
3, membrane electro luminescent device according to claim 1 is characterized in that described luminescent layer is sandwiched between the composite acceleration layer of two symmetrical deposits and adopts the alternating voltage driven for emitting lights.
4, membrane electro luminescent device according to claim 3 is characterized in that the luminescent layer between the described composite acceleration layer that is sandwiched in two symmetrical deposits adopts the luminescent layer overlaying structure that comprises 2-4 luminescent layer, presss from both sides with the High-Field acceleration layer between the adjacent emissive layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92105896 CN1033484C (en) | 1992-07-25 | 1992-07-25 | Laminated optimiging new type film electroluminescence device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 92105896 CN1033484C (en) | 1992-07-25 | 1992-07-25 | Laminated optimiging new type film electroluminescence device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1073314A true CN1073314A (en) | 1993-06-16 |
| CN1033484C CN1033484C (en) | 1996-12-04 |
Family
ID=4941654
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 92105896 Expired - Fee Related CN1033484C (en) | 1992-07-25 | 1992-07-25 | Laminated optimiging new type film electroluminescence device |
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| Country | Link |
|---|---|
| CN (1) | CN1033484C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104735833A (en) * | 2015-01-29 | 2015-06-24 | 浙江大学 | Electroluminescent device based on rare earth-doped TiO2 film and manufacturing method thereof |
-
1992
- 1992-07-25 CN CN 92105896 patent/CN1033484C/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104735833A (en) * | 2015-01-29 | 2015-06-24 | 浙江大学 | Electroluminescent device based on rare earth-doped TiO2 film and manufacturing method thereof |
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| Publication number | Publication date |
|---|---|
| CN1033484C (en) | 1996-12-04 |
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