CN107324293A - The supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of one step - Google Patents
The supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of one step Download PDFInfo
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- CN107324293A CN107324293A CN201710109106.9A CN201710109106A CN107324293A CN 107324293 A CN107324293 A CN 107324293A CN 201710109106 A CN201710109106 A CN 201710109106A CN 107324293 A CN107324293 A CN 107324293A
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Abstract
The invention provides a kind of supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step; it is characterized in that under inert atmosphere protection; using high-purity Sn powder, Te powder as initiation material; triggered using argon tungsten-arc welding etc. and chemically reacted; then the Quick-pressing in situ within the several seconds, so as to prepare the high-performance p-type SnTe block thermoelectric materials of densification.The present invention has the advantages that reaction speed is fast, technique is simple, energy-efficient; whole preparation process is shortened within 5min by more than the 24h of conventional method; and obtained SnTe blocks thermoelectric figure of merit in 775K up to 0.44, suitable for commercial applications and large-scale production.
Description
Technical field
The invention belongs to new energy materialses field, and in particular to a step is supper-fast to prepare high-performance p-type SnTe block thermoelectricity
The new method of material.
Background technology
World today's Progress in industrialization is advanced by leaps and bounds, and the demand to the energy is also growing, and oil, coal, natural gas etc. are no
Reproducible fossil energy is largely consumed and causes energy shortage, and the utilization rate of the energy is not high, wherein most energy with
Used heat form is discharged or wasted, and the discharge of these used heat not only results in the loss of the energy, can also bring increasing environmental pollution temperature
Room effect, especially haze is increasingly severe in recent years.Developing green regenerative energy sources turns into human society sustainable and stable development
Only way.Thermoelectric generation technology is a kind of to realize electric energy and heat by the Seebeck effects and Peltier effects of thermoelectric material
The technology directly mutually changed between energy, has the advantages that small volume, noiseless, good reliability, without drive disk assembly, by the world
The extensive concern of various countries.The conversion efficiency of thermoelectric material is by dimensionless thermoelectric figure of merit ZT (ZT=α2σ T/ κ wherein α are Seebeck
Coefficient, σ are that electrical conductivity, κ are that thermal conductivity, T are absolute temperature) determine, ZT values are bigger, and the conversion efficiency of thermoelectric of material is higher.
Current Pb chalcogenide and its alloy cpd has reached very high ZT values, but from the angle of environmental protection,
The presence of Pb elements greatly hinders its large-scale commercial application.SnTe has very similar electronics with PbTe, PbSe
Band structure, its potential substitution Pb bases chalcogenide that turns into turns into the middle temperature generating material of p-type that large-scale commercial is applied
Material.At present, preparing the method for SnTe thermoelectric materials mainly has melting annealed combination discharge plasma sintering, high-energy ball milling to combine heat
Pressure etc., these methods synthesis is completed with densification multistep, and long preparation period is easily introduced impurity, and technics comparing is complicated, and energy consumption is higher,
It is unfavorable for being commercialized large-scale application.Therefore, seek a kind of simple and quick, less energy consumption, it is reproducible and can be while realizing SnTe
Compound synthesis and the technology of densification, it is significant.
The content of the invention
The technical problems to be solved by the invention are to provide an a kind of step for the deficiency that above-mentioned prior art is present and surpass
The quick method for preparing high-performance p-type SnTe block thermoelectric materials, whole preparation process is shortened to by more than the 24h of conventional method
Within 5min, have the advantages that reaction speed is fast, technique is simple, energy-efficient.
The technical scheme that the present invention is used by solution the problem of set forth above for：
The supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of one step, it triggers it using Sn and Te as raw material
It is in situ after chemical reaction to apply high pressure, so as to prepare n-type SnTe block thermoelectric materials.
By such scheme, the mol ratio of the Sn and Te are 1:(0.9~1.1).
By such scheme, atmosphere is inert gas or vacuum in preparation process.
By such scheme, original position applies time delay 0~5s of the time of high pressure than triggering chemical reaction, the pressure of high pressure
For 200~700MPa.
By such scheme, chemical reaction is triggered to use argon tungsten-arc welding, tungsten needle electric discharge or electric arc trigger.
It is further preferred that the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step, key step is such as
Under：
1) stoichiometrically 1:(0.9~1.1) Sn powder, Te powder are weighed as raw material, material powder is then ground mixed
Close uniform, be then pressed into base substrate；
2) by step 1) the base substrate loading mould, trigger chemical reaction under an inert atmosphere, it is then in situ to base substrate again
It is quick to apply axial high pressure, you can to obtain the high-performance p-type SnTe block thermoelectric materials of densification.
By such scheme, step 1) in Sn powder, Te powder purity >=99.9%.
By such scheme, step 1) in pressing process be：Pressure is 5~20MPa, and the dwell time is 2~4min.
By such scheme, step 2) in, inert atmosphere pressure, can be by opening argon arc welding machine between 1~100kPa
Tungsten needle is discharged the starting the arc, so as to trigger base substrate to chemically react.In addition, the tungsten needle of the starting the arc is entangled with earthenware, base substrate and placement
1~3mm spaces are left between mould, it is therefore an objective to protect mould and discharge impurities gas etc..
By such scheme, step 2) in, it is that 0~5s applies axial high pressure to trigger the stand-by period after chemical reaction, is used
Axial high pressure pressure be 200~700MPa, the dwell time be 5~20s.
The high-performance p-type SnTe block thermoelectric materials that above-mentioned preparation method is obtained, consistency is higher than 97%, its thermoelectricity capability
Figure of merit ZT reaches 0.44 in 775K.
It is based on the above, on the premise of basic fundamental thought of the present invention is not departed from, according to the common of this area
Technological know-how and means, can also have the modification of diversified forms to its content, replace or change.As the tungsten needle starting the arc can be changed to tungsten needle
Electric discharge, the tungsten filament starting the arc, argon gas atmosphere can be changed to air or other protective gas etc..
Compared with existing SnTe technologies of preparing, it is an advantage of the invention that：
1. the present invention is under inert atmosphere protection, Quick-pressing in situ after chemical reaction is triggered using argon tungsten-arc welding etc.,
The synthesis and the step of densification process one for realizing SnTe first are completed, and whole preparation process is shortened by more than the 24h of conventional method
To within 5min, have the advantages that reaction speed is fast, technique is simple, energy-efficient.
2. the present invention is compared to its other party such as conventional melt annealed combination discharge plasma sintering, high-energy ball milling combination hot pressing
For method, because material manufacturing cycle is greatly shortened, it can avoid introducing impurity, more effectively reduce Te volatilization, preferably
Control product composition.
3. nanocrystal and amorphous that supper-fast preparation process of the invention is formed in situ course of reaction have little time to grow up and
Retain, this is beneficial to reduce thermal conductivity, final optimization pass thermoelectricity capability.
Brief description of the drawings
Fig. 1 is SnTe block XRD spectrums prepared in embodiment 1.
Fig. 2 is that (wherein photo multiplication factor is respectively for the stereoscan photographs of prepared SnTe blocks in embodiment 1
10K, 20K, 50K, 100K times), therefrom it can be seen that for compact block, a large amount of nano particles are uniformly distributed in block materials.
Fig. 3 is embodiment 1 with preparing the relation that the power factor PF of the SnTe blocks drawn is varied with temperature in comparative example 1
Figure.The preparation time for using melting annealed combination discharge plasma sintering to prepare SnTe wherein in comparative example 1 is about 3 days.
Fig. 4 is embodiment 1 with preparing the graph of a relation that the thermal conductivity of the SnTe blocks drawn is varied with temperature in comparative example 1.
Fig. 5 is embodiment 1 with preparing the relation that the thermoelectric figure of merit ZT of the SnTe blocks drawn is varied with temperature in comparative example 1
Figure.
Fig. 6 is SnTe block XRD spectrums prepared in embodiment 2.
Embodiment
In order to be better understood from the present invention, with reference to the embodiment content that the present invention is furture elucidated, but the present invention
Content is not limited solely to the following examples.
Sn powder in following embodiments, Te powder, Sn, Te purity >=99.9%.
Comparative example 1
Synthesis method reference literature (the Gangjian Tan of SnTe block thermoelectric materials are not mixed in this comparative example
etal.Valence band modification and high thermoelectric performance in SnTe
heavily alloyed with MnTe,Journal of the American Chemical Society,2015).Specifically
Preparation method is as follows：
1) stoichiometrically 1:1 weighing Sn particles (99.999%), Te particles (99.999%) 8g are used as raw material；
2) raw material is sealed in vitreosil glass tube, be positioned in vertical melting furnace, 1423K is warming up to 11h, protected
Warm 12h, ice water quenching；
3) gained ingot body is positioned in annealing furnace, 873K anneals 2 days；
4) gained ingot body is pulverized, carries out discharge plasma sintering, sintering process is：Sintering temperature 773K, insulation
Time 5min, sintering pressure 40MPa, obtain diameter 12.7mm, height 9mm SnTe block samples；
5) gained compact block is subjected to structure and performance characterization.
SnTe block thermoelectric materials prepared by the melting annealed combination discharge plasma sintering, better performances, in this, as
Comparative example, with comparativity.
Embodiment 1
The supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of one step, it comprises the following steps：
1) stoichiometrically 1:1 weighs Sn powder Te powder 10g as raw material, and reactant is obtained with mortar is well mixed；Will
Reactant is cold-pressed 2min under 5MPa, obtains diameter of phi 16mm, high 11mm green body cylinders；
2) green body cylinders are placed in steel die, be put into the reaction unit filled with 50kPa argon gas, started
Argon arc welding machine, so that the tungsten needle point discharge starting the arc triggers imposes the axially high of 600MPa at once after base substrate reaction, tungsten needle starting the arc 2s
Pressure, pressurize 10s is densified it, that is, obtains high-performance p-type SnTe block thermoelectric materials.
The present embodiment whole preparation process is shorter than 5min, and prepared high-performance SnTe block thermoelectric materials product is carried out
Phase composition analysis and thermoelectricity capability test.
As shown in Figure 1, products therefrom is SnTe single-phase compounds, and its consistency ＞ 97% is calculated after tested；Can by Fig. 2
Know, obtained block sample is fine and close, grain surface is uniform-distribution with a large amount of unfashioned nucleus for being less than 50nm, and this is due to cold
But speed is exceedingly fast nanocrystal and amorphous has little time to grow up and retain；From the figure 3, it may be seen that the work(of SnTe blocks manufactured in the present embodiment
Rate factor PF optimizes at low temperature, little with difference in comparative example 1 under high temperature；As shown in Figure 4, thermal conductivity is less than in the present embodiment
The thermal conductivity of SnTe blocks sample in comparative example 1, this is due to have in the present embodiment largely to receive in obtained SnTe block samples
Rice grain；As shown in Figure 5, the SnTe thermoelectric figure of merit ZT values in the present embodiment reach 0.44 in 775K, hence it is evident that better than comparative example 1
In ZT values.The synthesis of SnTe blocks sample is completed with preparing multistep in comparative example, and manufacturing cycle about 3 days can in the present embodiment
A supper-fast step completes the synthesis and densification of SnTe blocks in 5min.
Embodiment 2
The supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of one step, it comprises the following steps：
1) stoichiometrically 1:1 weighs Sn powder Te powder 10g as raw material, and reactant is obtained with mortar is well mixed；Will
Reactant is cold-pressed 2min under 5MPa, obtains diameter of phi 16mm, high 11mm green body cylinders；
2) green body cylinders are placed in steel die, be put into the reaction unit filled with 50kPa argon gas, started
Argon arc welding machine, so that the tungsten needle point discharge starting the arc triggers imposes the axially high of 700MPa at once after base substrate reaction, tungsten needle starting the arc 4s
Pressure, pressurize 10s is densified it, that is, obtains high-performance p-type SnTe block thermoelectric materials.
Fig. 6 is SnTe block XRD spectrums prepared in embodiment 2, is pure single-phase SnTe single-phase compounds.
Described above is only the preferred embodiment of the present invention, it is noted that come for one of ordinary skill in the art
Say, without departing from the concept of the premise of the invention, some modifications and variations can also be made, these belong to the present invention's
Protection domain.
Claims (10)
1. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step, it is characterised in that it is using Sn and Te as original
Material, triggers application high pressure in situ after chemical reaction, so as to prepare high-performance p-type SnTe block thermoelectric materials.
2. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step according to claim 1, its feature
The mol ratio for being the Sn and Te is 1:(0.9~1.1).
3. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step according to claim 1, its feature
It is in preparation process that atmosphere is inert gas or vacuum.
4. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step according to claim 1, its feature
It is to trigger chemical reaction to use argon tungsten-arc welding.
5. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step according to claim 1, its feature
It is time delay 0~5s of the time in situ for applying high pressure than triggering chemical reaction, the pressure of high pressure is 200~700MPa.
6. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step, it is characterised in that it mainly includes following
Step：
1) Sn is pressed：Te stoichiometric proportions 1:(0.9~1.1) Sn powder, Te powder are weighed as raw material, material powder ground and mixed is equal
It is even, it is then pressed into base substrate；
2) by step 1) base substrate is fitted into mould, triggers chemical reaction using argon tungsten-arc welding under protective atmosphere, then
It is in situ to base substrate again quickly to apply axial high pressure, you can to obtain high-performance p-type SnTe block thermoelectric materials.
7. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step according to claim 6, its feature
It is step 2) in, protective atmosphere pressure is between 1~100kPa.
8. the supper-fast method for preparing high-performance p-type SnTe block thermoelectric materials of a step according to claim 6, its feature
It is step 3) in, it is that 0~5s applies axial high pressure to trigger after chemical reaction the stand-by period, axial high-pressure is 200~
700MPa, the dwell time is 5~20s.
9. the high-performance p-type SnTe block thermoelectric materials that in claim 1~8 prepared by any one methods described.
10. high-performance p-type SnTe block thermoelectric materials according to claim 9, it is characterised in that its consistency is higher than
97%, dimensionless thermoelectric figure of merit ZT reaches 0.44 in 775K.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108516526A (en) * | 2018-04-12 | 2018-09-11 | 同济大学 | A kind of high-performance PbTe based solid solution thermoelectric materials and preparation method thereof |
| CN109273583A (en) * | 2018-08-29 | 2019-01-25 | 宁波革鑫新能源科技有限公司 | One kind mixing gadolinium SnTe base thermoelectricity material and preparation method thereof |
| CN110042264A (en) * | 2019-02-25 | 2019-07-23 | 中国科学院电工研究所 | A kind of quick method for preparing ZrNiSn thermoelectric material |
| CN114014278A (en) * | 2021-09-23 | 2022-02-08 | 中国科学院理化技术研究所 | Method for preparing SnTe thermoelectric material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1080913A (en) * | 1993-06-22 | 1994-01-19 | 武汉工业大学 | The self propagating high temperature instantaneous stamping prepares matrix material fast |
| UA40444U (en) * | 2008-10-31 | 2009-04-10 | Прикарпатский Национальный Университет Імені Василия Стефаника | METHOD FOR OBTAINING OF p-TYPE TIN TELLURIDE |
| CN104263980A (en) * | 2014-09-16 | 2015-01-07 | 武汉理工大学 | Method for rapidly preparing high-performance ZrNiSn block thermoelectric material |
| CN104263986A (en) * | 2014-09-25 | 2015-01-07 | 武汉理工大学 | Ultrafast preparation method of high-performance SnTe based thermoelectric material |
| CN106384778A (en) * | 2016-03-06 | 2017-02-08 | 武汉理工大学 | Method of manufacturing thermoelectric material powder and device in superfast way |
-
2017
- 2017-02-27 CN CN201710109106.9A patent/CN107324293A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1080913A (en) * | 1993-06-22 | 1994-01-19 | 武汉工业大学 | The self propagating high temperature instantaneous stamping prepares matrix material fast |
| UA40444U (en) * | 2008-10-31 | 2009-04-10 | Прикарпатский Национальный Университет Імені Василия Стефаника | METHOD FOR OBTAINING OF p-TYPE TIN TELLURIDE |
| CN104263980A (en) * | 2014-09-16 | 2015-01-07 | 武汉理工大学 | Method for rapidly preparing high-performance ZrNiSn block thermoelectric material |
| CN104263986A (en) * | 2014-09-25 | 2015-01-07 | 武汉理工大学 | Ultrafast preparation method of high-performance SnTe based thermoelectric material |
| CN106384778A (en) * | 2016-03-06 | 2017-02-08 | 武汉理工大学 | Method of manufacturing thermoelectric material powder and device in superfast way |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108516526A (en) * | 2018-04-12 | 2018-09-11 | 同济大学 | A kind of high-performance PbTe based solid solution thermoelectric materials and preparation method thereof |
| CN108516526B (en) * | 2018-04-12 | 2020-10-02 | 同济大学 | High-performance PbTe-based solid solution thermoelectric material and preparation method thereof |
| CN109273583A (en) * | 2018-08-29 | 2019-01-25 | 宁波革鑫新能源科技有限公司 | One kind mixing gadolinium SnTe base thermoelectricity material and preparation method thereof |
| CN110042264A (en) * | 2019-02-25 | 2019-07-23 | 中国科学院电工研究所 | A kind of quick method for preparing ZrNiSn thermoelectric material |
| CN114014278A (en) * | 2021-09-23 | 2022-02-08 | 中国科学院理化技术研究所 | Method for preparing SnTe thermoelectric material |
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Application publication date: 20171107 |