CN107295276A - Increase rhombus pixel array, imaging sensor and the acquisition method of picture based on dislocation - Google Patents
Increase rhombus pixel array, imaging sensor and the acquisition method of picture based on dislocation Download PDFInfo
- Publication number
- CN107295276A CN107295276A CN201610226173.4A CN201610226173A CN107295276A CN 107295276 A CN107295276 A CN 107295276A CN 201610226173 A CN201610226173 A CN 201610226173A CN 107295276 A CN107295276 A CN 107295276A
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- Prior art keywords
- pixel array
- circuit
- image
- dislocation
- rhombus
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
Abstract
The present invention relates to image sensor technologies field, specifically related to increase rhombus pixel array, imaging sensor and the acquisition method of picture based on dislocation, wherein, rhombus pixel array repeats Heterogeneous Permutation composition using multiple rhombus pixels on two dimensional surface, and imaging sensor includes rhombus pixel array, scan drive circuit, reading circuit, analog-to-digital conversion circuit（ADC）, image-signal processor（ISP）And the power circuit powered for whole chip power and the control circuit controlled for whole chip intelligent；The present invention is different from traditional sub-pix dislocation Sampling techniques, pass through exclusive " rhombus be nested pixel " structure, in the case of with identical or close spatial resolution, make the volume, weight, cost of whole set equipment more conventional compared to all decreasing, pass through image-signal processor（ISP）Algorithm process cause overall 1.5 ~ 2 times of the lifting of image resolution ratio, the present invention is overall to possess raising resolution ratio, signal to noise ratio（S/N）, isolation, reduce the functions such as cost, volume, weight.
Description
Technical field
The present invention relates to image sensor technologies field, and in particular to increases rhombus pixel array, the image of picture based on dislocation
Sensor and acquisition method.
Background technology
Imaging sensor develops into today and popularized very much, and the acquisition range of image spans multiple frequency ranges, common
There are microwave, THz, infrared, visible ray, ultraviolet, X-ray etc. in spectrum region, and traditional pixel structure is arranged line by line using level, at present
It is highly developed.Improving the method for image sensor resolutions and picture quality typically has two kinds, and first is increase optics
System focal length, but so can then cause the volume, quality, cost of whole set equipment to greatly increase, and optics must be redesigned
System, implements relatively complicated；Second is to reduce imaging sensor pixel dimension, generally, constant in optical-mechanical system
In the case of, if reducing pixel dimension, imaging system MTF can be caused to decline again, signal to noise ratio is reduced, and influences image quality.
In terms of microwave, THz, far infrared detection, due to the special nature and related spectral coverage photosensitive material of these spectral coverages
Limitation, compared to the spectral coverage detector such as near-infrared, visible ray, ultraviolet, X-ray, microwave, THz, the pixel chi of far infrared deterctor
Very little generally large, pixel spacing is also larger, under identical optical system, microwave, THz, the resolution ratio of far infrared spectral coverage image
It is relatively low, spatial resolution is improved using conventional method, machine volume, weight will be caused to be doubled and redoubled, mechanical-optical setup is difficult to,
Application requirement to user is harsher.
The content of the invention
In view of the shortcomings of the prior art, the invention provides rhombus pixel array, the imaging sensor for increasing picture based on dislocation
And acquisition method, by rhombus dislocation pixel array and correlation acquisition process technology, problem above can be effectively solved, significantly
Resolution ratio is improved, volume, weight, the cost etc. of complete machine is reduced.
To realize object above, the present invention is achieved by the following technical programs：
Increase the rhombus pixel array of picture based on dislocation, it is characterised in that：Mistake is repeated on two dimensional surface using multiple rhombus pixels
Position is rearranged.
A kind of imaging sensor for increasing picture based on dislocation, it is characterised in that：Including rhombus pixel array, for gathering image
Signal；ASIC circuit, for driving rhombus pixel array acquisition picture signal, and the signal collected is read out, is handled,
Analysis, output.
Preferably, ASIC circuit includes reading circuit, for reading picture signal；Analog-to-digital conversion circuit（ADC）, use
Data signal is converted in the analog signal for reading the reading circuit；Image-signal processor（ISP）, after to conversion
Data signal analyzed and processed；Interface circuit, is responsible for image-signal processor（ISP）The picture signal that processing is completed is led to
Cross interface output；Scan drive circuit, for drive control pixel array and control circuit, the intelligence control for whole device
System.
Preferably, in addition to power circuit, it is responsible for power supply and power management.
Preferably, imaging sensor is made using ASIC techniques or ASIC+MEMS hybrid techniques.
Preferably, the imaging sensor being made of ASIC+MEMS hybrid techniques can use separate conductors bridge pier structure
Or common wire bridge pier structure.
A kind of image-pickup method for increasing picture based on dislocation, it is characterised in that comprise the following steps：
A. pixel array is included, the pixel array is rhombus pixel array, scan drive circuit drive control pixel array；
B. the picture signal read in reading circuit pointwise, the reading pixel array line by line, by column；
C. analog-to-digital conversion circuit（ADC）The analog signal for being responsible for being read reading circuit is converted to data signal；
D. image-signal processor（ISP）By the data signal of collection, sub-pixed mapping is generated by algorithm and the image that is nested；Interface
Circuit is responsible for handling image, is exported by standard multimedia interface；Power circuit is responsible for power supply and power management；Control circuit
It is responsible for the intelligent control of whole chip.
Beneficial effects of the present invention:
1. be different from traditional sub-pixed mapping dislocation Sampling techniques, by exclusive " rhombus be nested pixel " structure, with identical
Or in the case of close spatial resolution, imaging sensor pixel dimension can be reduced while reducing the optical system of whole set equipment
Focal length, making the volume, weight, cost of whole set equipment reduces；
2. pass through image-signal processor（ISP）The General Promotion resolution ratio of image, resolution ratio integrally lifts 1.5 ~ 2 times, and
And remain the Energy distribution of target；
3. in antidetonation, it is thermally isolated, also achieves good effect in anti-interference, utilization rate.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, come for those of ordinary skill in the art
Say, on the premise of not paying creative work, other accompanying drawings can also be obtained according to these accompanying drawings.
Fig. 1 is the theory diagram of the present invention；
Fig. 2 is the pixel array schematic diagram that ASIC techniques are used in the present invention；
Fig. 3 is using ASIC+MEMS hybrid techniques and using the pixel array schematic diagram of separate conductors bridge pier structure in the present invention；
Fig. 4 is Fig. 3 partial enlarged drawing；
Fig. 5 is using ASIC+MEMS and with the pixel array schematic diagram of common wire bridge pier structure in the present invention；
Fig. 6 is Fig. 5 partial enlarged drawing；
Fig. 7 is Fig. 3 and Fig. 5 three-dimensional structure diagram；
Wherein, 9：MEMS pixels, 10：Wire bridge pier, 11：ASIC wafer.
Embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described.Based on the embodiment in the present invention,
The every other embodiment that those of ordinary skill in the art are obtained under the premise of creative work is not made, belongs to this hair
The scope of bright protection.
Increase the rhombus pixel array of picture based on dislocation, Heterogeneous Permutation group is repeated on two dimensional surface using multiple rhombus pixels
Into.As illustrated in figs. 2-7.
According to rhombus pixel array, inventor this additionally provide it is a kind of based on dislocation increase picture imaging sensor.
A kind of imaging sensor for increasing picture based on dislocation, including rhombus pixel array, for gathering picture signal；ASIC electricity
Road, for driving rhombus pixel array acquisition picture signal, and the signal collected is read out, handles, analyze, exporting.
ASIC circuit includes reading circuit, for reading picture signal；Analog-to-digital conversion circuit（ADC）, for reading electricity by described
The analog signal that road is read is converted to data signal；Image-signal processor（ISP）, for being carried out to the data signal after conversion
Analyzing and processing；Interface circuit, is responsible for image-signal processor（ISP）The picture signal that processing is completed is exported by interface；Sweep
Drive circuit is retouched, for drive control pixel array and control circuit, the intelligent control for whole device；Power circuit,
It is responsible for power supply and power management.
Further, imaging sensor is made using ASIC techniques, as shown in Figure 2.
Further, imaging sensor is made using ASIC+MEMS hybrid techniques, as seen in figures 3-6.
Further, the imaging sensor for increasing picture using the dislocation of ASIC+MEMS hybrid techniques uses separate conductors bridge
Pier structure, as shown in Figure 3, Figure 4.
Further, the imaging sensor for increasing picture using the dislocation of ASIC+MEMS hybrid techniques uses common wire bridge
Pier structure, as shown in Figure 5, Figure 6.
Concrete operating principle is as follows：
As shown in figure 1, first, including pixel array, the pixel array is rhombus pixel array, scan drive circuit driving control
Pixel array processed, scan drive circuit is responsible for drive control rhombus array；Secondly, reading circuit pointwise, reading line by line, by column
The picture signal read in the pixel array, then, analog-to-digital conversion circuit（ADC）It is responsible for being read reading circuit
Analog signal be converted to data signal；Finally, image-signal processor（ISP）By the data signal of collection, given birth to by algorithm
Into sub-pixed mapping and the image that is nested；Meanwhile, interface circuit is responsible for handling image, is exported by standard multimedia interface；Power circuit
It is responsible for power supply and power management；Control circuit is responsible for the intelligent control of whole chip.
In the present invention, image-signal processor（ISP）By using Space Time over-sampling image system, using two row with
On have over-sampling of the sub-pixed mapping level dislocation to scene spatially and temporally direction, by algorithm for reconstructing generate sub-pixed mapping into sub-pixed mapping and
Be nested image, and synthesizes the image of high-resolution, improves the resolution ratio of image, remains the power distribution properties of target, and
And the image object energy after dislocation sampling, the information of set and original object closer to, it is not easy in complex background
In flood.
Meanwhile, imaging sensor employs rhombus pixel array, and it is a kind of brand-new imaging sensor pixel array, is adopted
With ASIC techniques or ASIC+MEMS hybrid techniques design and manufacture, wherein, ASIC meet collection near-infrared, visible ray, it is ultraviolet,
The requirement of the image sensor applications such as X-ray；ASIC+MEMS meets the image sensor applications such as collection microwave, THz, far infrared will
Ask, while the reception material by changing MEMS sensing elements, can also gather the correlation such as near-infrared, visible ray, ultraviolet, X-ray
Spectral coverage signal.
Finally, traditional sub-pixed mapping dislocation Sampling techniques are different from, the present invention passes through exclusive " rhombus be nested pixel " knot
Structure, in the case of with identical or close spatial resolution, can reduce imaging sensor pixel dimension while reducing complete machine
The optical system focal length of equipment, making the volume, weight, cost of whole set equipment reduces, and the present invention is overall to possess raising resolution ratio, letter
Make an uproar ratio（S/N）, isolation, reduce the functions such as cost, volume, weight, cost.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
The present invention is described in detail, it will be understood by those within the art that：It still can be to foregoing each implementation
Technical scheme described in example is modified, or carries out equivalent substitution to which part technical characteristic；And these modification or
Replace, the essence of appropriate technical solution is departed from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (7)
1. increase the rhombus pixel array of picture based on dislocation, it is characterised in that：Repeated using multiple rhombus pixels on two dimensional surface
Heterogeneous Permutation is constituted.
2. increase the imaging sensor of picture based on dislocation, it is characterised in that：Including rhombus pixel array as claimed in claim 1,
For gathering picture signal；ASIC circuit, for driving rhombus pixel array acquisition picture signal, and the signal collected is entered
Row reads, handled, analyzing, output.
3. a kind of imaging sensor for increasing picture based on dislocation as claimed in claim 2, it is characterised in that the ASIC circuit bag
Reading circuit is included, for reading picture signal；Analog-to-digital conversion circuit（ADC）, for the mould for reading the reading circuit
Intend signal and be converted to data signal；Image-signal processor（ISP）, for being analyzed and processed to the data signal after conversion；
Interface circuit, is responsible for image-signal processor（ISP）The picture signal that processing is completed is exported by interface；Turntable driving electricity
Road, for drive control pixel array；Control circuit, the intelligent control for whole device.
4. a kind of imaging sensor for increasing picture based on dislocation as claimed in claim 3, it is characterised in that also including power supply electricity
Road, is responsible for power supply and power management.
5. a kind of imaging sensor for increasing picture based on dislocation as described in any one of claim 2 to 4, it is characterised in that described
Imaging sensor is made using ASIC techniques or ASIC+MEMS hybrid techniques.
6. a kind of imaging sensor for increasing picture based on dislocation as described in any one of claim 2 to 4, it is characterised in that described
The imaging sensor being made of ASIC+MEMS hybrid techniques uses separate conductors bridge pier structure or common wire bridge pier structure.
7. a kind of image-pickup method for increasing picture based on dislocation, it is characterised in that comprise the following steps：
A. a pixel array is included, the pixel array is to use rhombus pixel array as claimed in claim 1, scanning
Drive circuit drive control pixel array；
B. the picture signal read in reading circuit pointwise, the reading pixel array line by line, by column；
C. analog-to-digital conversion circuit（ADC）The analog signal for being responsible for being read reading circuit is converted to data signal；
D. image-signal processor（ISP）By the data signal of collection, sub-pixed mapping is generated by algorithm and the image that is nested, and close
Image as high-resolution；Interface circuit is responsible for handling image, is exported by standard multimedia interface；Power circuit is responsible for confession
Electricity and power management；Control circuit is responsible for the intelligent control of whole chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610226173.4A CN107295276A (en) | 2016-04-13 | 2016-04-13 | Increase rhombus pixel array, imaging sensor and the acquisition method of picture based on dislocation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610226173.4A CN107295276A (en) | 2016-04-13 | 2016-04-13 | Increase rhombus pixel array, imaging sensor and the acquisition method of picture based on dislocation |
Publications (1)
| Publication Number | Publication Date |
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| CN107295276A true CN107295276A (en) | 2017-10-24 |
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| CN201610226173.4A Pending CN107295276A (en) | 2016-04-13 | 2016-04-13 | Increase rhombus pixel array, imaging sensor and the acquisition method of picture based on dislocation |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019858A (en) * | 2003-06-27 | 2005-01-20 | Toppan Printing Co Ltd | Two-dimension image converting element |
| KR20050116498A (en) * | 2004-06-08 | 2005-12-13 | 엠텍비젼 주식회사 | Cmos image sensor |
| CN101145201A (en) * | 2007-10-08 | 2008-03-19 | 北京科技大学 | Quick target identification and positioning system and method |
| CN103024305A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Improved pixel array |
-
2016
- 2016-04-13 CN CN201610226173.4A patent/CN107295276A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019858A (en) * | 2003-06-27 | 2005-01-20 | Toppan Printing Co Ltd | Two-dimension image converting element |
| KR20050116498A (en) * | 2004-06-08 | 2005-12-13 | 엠텍비젼 주식회사 | Cmos image sensor |
| CN101145201A (en) * | 2007-10-08 | 2008-03-19 | 北京科技大学 | Quick target identification and positioning system and method |
| CN103024305A (en) * | 2012-12-27 | 2013-04-03 | 上海集成电路研发中心有限公司 | Improved pixel array |
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Application publication date: 20171024 |
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