CN107294498B - Asymmetric Doherty amplifier - Google Patents

Asymmetric Doherty amplifier Download PDF

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CN107294498B
CN107294498B CN201610192876.XA CN201610192876A CN107294498B CN 107294498 B CN107294498 B CN 107294498B CN 201610192876 A CN201610192876 A CN 201610192876A CN 107294498 B CN107294498 B CN 107294498B
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signal
module
circuit
auxiliary
amplification
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CN107294498A (en
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顾滕锋
宋贺伦
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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Suzhou Institute of Nano Tech and Nano Bionics of CAS
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion

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  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
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Abstract

The invention provides an asymmetric Doherty amplifier which comprises a signal separation module, a main amplification module, at least one auxiliary amplification module and a signal combining module, wherein the signal separation module is used for separating signals from the main amplification module; the asymmetric Doherty amplifier further comprises a coupler, a signal delay module and at least one drain voltage regulation module; the drain voltage regulation and control module is connected between the coupler and the auxiliary amplification module, and is used for detecting the power change of the input signal from the coupler, generating corresponding control voltage according to the power change condition of the input signal, and inputting the control voltage into the auxiliary amplification module to serve as the drain bias voltage of the auxiliary amplification module. According to the asymmetric Doherty amplifier provided by the invention, the drain voltage of the auxiliary amplification module is adjusted through the drain voltage adjustment module, so that the power increase of the auxiliary amplification module just compensates the power reduction of the main amplification module, the integral gain is kept unchanged, and the linearity of the whole amplifier is improved.

Description

Asymmetric Doherty amplifier
Technical Field
The invention relates to the field of radio frequency power amplifiers, in particular to an asymmetric Doherty amplifier.
Background
Currently, the mainstream amplifiers work in class AB state, but the class AB amplifier has a great disadvantage that the efficiency is low when the power is backed off, theoretically, the efficiency is close to that of the class B amplifier, and when the power is backed off by 6dB, the efficiency is halved, so the efficiency at the average power of the modulation signal is low. In order to solve the problem of low efficiency at the power back-off of the class AB power amplifier, a Doherty amplifier technology was proposed in 1936 in w.h.doherty to make up for the disadvantage to a certain extent, the conventional symmetric Doherty amplifier consists of two identical amplifiers, a bias in the class AB state is used as a main power amplification module, a bias in the class C state is used as an auxiliary power amplification module, and fig. 1 shows a schematic block diagram of the conventional symmetric Doherty amplifier.
As shown in fig. 1, the input signal separation unit divides the signal into two paths, which are respectively used for driving the power amplification main module and the power amplification auxiliary module; the power amplification main module is connected with the power amplification auxiliary module through a quarter-wavelength (lambda/4) transmission line of 50 omega, and the quarter-wavelength (lambda/4) transmission line plays a role in impedance inversion; the lambda/4 transmission line input by the power amplification auxiliary module plays a role of phase delay to ensure that the phases of signals output by the power amplification main module and the power amplification auxiliary module are consistent at the combiner node; a 35 Ω λ/4 transmission line is connected between the combining node and the load, and for a symmetric Doherty amplifier, its characteristic impedance is about 35 Ω, which aims to convert a 50 Ω load impedance to a 25 Ω combining impedance.
The main principle of the Doherty amplifier is to adjust and pull the load impedance seen by the main amplifier through the turn-on degree of the auxiliary amplifier, that is, the magnitude of the output current, so that the voltage swing of the main amplifier can reach the maximum when the power of the main amplifier is backed off, thereby obtaining higher efficiency. This requires that the auxiliary amplifier be operated in class C, which is turned on gradually as the input signal power increases, while the main amplifier is operated in class AB.
However, just because the power amplification auxiliary module operates in the class C state, the power of the same amplifier operating in the class C state is reduced compared with that of the class AB state, which results in that the conventional Doherty amplifier with a symmetrical structure cannot achieve sufficient pulling of impedance, and therefore, the efficiency of the back-off point is greatly lost relative to the maximum efficiency. Moreover, the efficiency of the conventional Doherty amplifier with a symmetrical structure is sharply reduced when the power back-off exceeds 6 dB. Furthermore, the linearity of the conventional Doherty amplifier is poor.
Disclosure of Invention
In order to solve the above problems, the present invention provides an asymmetric Doherty amplifier, which can maintain the overall gain unchanged and improve the linearity of the whole amplifier.
The specific technical scheme provided by the invention is as follows: an asymmetric Doherty amplifier is provided, which comprises a signal separation module, a main amplification module, at least one auxiliary amplification module and a signal combining module; the asymmetric Doherty amplifier further comprises a coupler, a signal delay module and at least one drain voltage regulation module; the coupler sends a received input signal to a signal delay module, the signal delay module delays the received input signal and sends the delayed input signal to the signal separation module, the signal separation module separates the delayed input signal and sends the separated input signal to the main amplification module and the auxiliary amplification module, and the main amplification module and the auxiliary amplification module respectively amplify and input the signal separated by the signal separation module to the signal combination module; the drain voltage regulation and control module is connected between the coupler and the auxiliary amplification module, and is used for detecting the power change of the input signal from the coupler, generating corresponding control voltage according to the power change condition of the input signal, and inputting the control voltage into the auxiliary amplification module to serve as the drain bias voltage of the auxiliary amplification module.
Furthermore, the drain voltage regulation and control module comprises a detection unit, a control unit and a power conversion unit which are connected in sequence; the detection unit is used for detecting the power of the input signal from the coupler and forming a voltage signal which changes along with the power according to the power of the input signal; the control unit amplifies the voltage signal output by the detection unit and generates a corresponding PWM control signal; the power supply conversion unit generates corresponding control voltage according to the PWM control signal and inputs the control voltage into the auxiliary amplification module.
Further, the detection unit includes a signal detection circuit for detecting a peak voltage in each period of the input signal from the coupler and transmitting the peak voltage to the signal processing circuit, and a signal processing circuit for smoothing the peak voltage to form the voltage signal.
Further, the control unit includes a signal amplification circuit and a signal modulation circuit, the signal amplification circuit receives the voltage signal and amplifies the voltage signal, and the signal modulation circuit receives the amplified voltage signal and generates a corresponding PWM control signal according to the amplified voltage signal.
Further, the main amplification module comprises a main power amplification circuit and a first impedance conversion circuit; the main power amplifying circuit is connected with the signal separating module and then connected to the first impedance conversion circuit, and the first impedance conversion circuit is connected with the main power amplifying circuit and then connected to the signal combining module.
Further, the main power amplifying circuit comprises a first input matching circuit, a first transistor and a first output matching circuit which are connected in sequence; the first input matching circuit is connected to the signal splitting module, and the first output matching circuit is connected to the first impedance transformation circuit.
Further, the auxiliary amplification module comprises a second impedance conversion circuit and an auxiliary power amplification circuit; the second impedance conversion circuit is connected with the signal separation module and then connected to the auxiliary power amplification circuit, and the auxiliary power amplification circuit is connected with the second impedance conversion circuit and then connected to the signal combination module.
Furthermore, the auxiliary power amplifying circuit comprises a second input matching circuit, a second transistor and a second output matching circuit which are connected in sequence; the second input matching circuit is connected to the second impedance conversion circuit, and the second output matching circuit is connected to the signal combining module; the drain bias voltage of the second transistor is controlled by the drain voltage regulation module.
Further, the asymmetric Doherty amplifier comprises n auxiliary amplification modules and 1 drain voltage regulation and control module, and control voltages generated by the drain voltage regulation and control modules are respectively input into the n auxiliary amplification modules as drain bias voltages of the n auxiliary amplification modules;
wherein n is an integer greater than or equal to 1.
Further, the asymmetric Doherty amplifier comprises n auxiliary amplification modules and n drain voltage regulation and control modules, wherein the n drain voltage regulation and control modules generate n control voltages which are input into the n auxiliary amplification modules in a one-to-one correspondence manner and serve as drain bias voltages of the n auxiliary amplification modules;
wherein n is an integer greater than 1.
The asymmetric Doherty amplifier comprises a drain voltage adjusting module, wherein the drain voltage adjusting module can detect the power change of an input signal from a coupler and generate a corresponding control voltage according to the power change condition of the input signal to be input into an auxiliary amplifying module to serve as a drain bias voltage of the auxiliary amplifying module; according to the power change of the input signal, the drain voltage of the auxiliary amplification module is adjusted through the drain voltage adjustment module, so that the increase of the power of the auxiliary amplification module just compensates the decrease of the power of the main amplification module, the integral gain is kept unchanged, and the linearity of the whole amplifier is improved.
Drawings
The above and other aspects, features and advantages of embodiments of the present invention will become more apparent from the following description taken in conjunction with the accompanying drawings, in which:
FIG. 1 is a schematic diagram of a prior art Doherty amplifier circuit configuration;
FIG. 2 is a schematic diagram of the asymmetric Doherty amplifier circuit configuration of embodiment 1;
FIG. 3 is a schematic diagram of a specific circuit structure of the asymmetric Doherty amplifier of embodiment 1;
FIG. 4 is a schematic diagram of a circuit configuration of a drain voltage regulation module;
FIG. 5 is a schematic diagram of the circuit structure of the detector unit;
FIG. 6 is a schematic diagram of a circuit structure of the control unit;
FIG. 7 is a schematic diagram of a main power amplifier circuit;
FIG. 8 is a schematic diagram of an auxiliary power amplifier circuit;
FIG. 9 is a schematic diagram of the asymmetric Doherty amplifier circuit of embodiment 2;
fig. 10 is a schematic circuit diagram of an asymmetric Doherty amplifier of embodiment 3.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, these embodiments are provided to explain the principles of the invention and its practical application to thereby enable others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to the particular use contemplated.
The invention provides an asymmetric Doherty amplifier which comprises a coupler, a signal delay module, a signal separation module, a main amplification module, at least one auxiliary amplification module, at least one drain voltage regulation and control module and a signal combining module. The drain electrode bias voltage of the auxiliary amplification module is adjusted through the drain electrode voltage regulation module, so that the main amplification module works in the AB class, and the auxiliary amplification module works in the C class.
Example 1
Referring to fig. 2 and 3, the asymmetric Doherty amplifier provided in this embodiment includes a coupler 11, a signal delay module 12, a signal separation module 13, a main amplification module 14, an auxiliary amplification module 15, a drain voltage regulation module 16, and a signal combining module 17.
The coupler 11 is connected to a signal source 10 and configured to receive an input signal sent by the signal source 10, the signal delay module 12 and the drain voltage regulation and control module 16 are respectively connected to the coupler 11, the signal separation module 13 is connected to the signal delay module 12, the main amplification module 14 is connected to the signal separation module 13, the auxiliary amplification module 15 is respectively connected to the signal separation module 13 and the drain voltage regulation and control module 16, and the signal combining module 17 is respectively connected to the main amplification module 14 and the auxiliary amplification module 15.
The coupler 11 is configured to perform power distribution on a received input signal, send a part of the input signal to the signal delay module 12, and send another part of the input signal to the drain voltage regulation module 16, where a coupling degree of the coupler 11 is not greater than 15 dB. The input signal sent by the coupler 11 to the signal delay module 12 is defined as a first signal, and the input signal sent by the coupler 11 to the drain voltage regulation module 16 is defined as a second signal. Preferably, the coupler 11 is configured to distribute the received input signal unequally, wherein the power of the first signal is larger than the power of the second signal, and wherein the power of the second signal is much smaller than the power of the entire input signal in order not to affect the overall gain of the asymmetric Doherty amplifier.
Since the drain voltage regulation module 16 needs to process the second signal and then send the processed second signal to the auxiliary amplification module 15, which requires a certain time response, in order to synchronize the signal received by the auxiliary amplification module 15 from the drain voltage regulation module 16 with the signal received from the signal separation module 13, the signal delay module 12 needs to delay the received first signal and then send the delayed first signal to the signal separation module 13. The signal separation module 13 is configured to separate the delayed first signal into a first sub-signal and a second sub-signal, send the first sub-signal to the main amplification module 14, and send the second sub-signal to the auxiliary amplification module 15. The main amplifying module 14 is configured to amplify the received first sub-signal to obtain an amplified first sub-signal. The drain voltage regulation and control module 16 is configured to detect a power change of the input signal from the coupler 11, generate a corresponding control voltage according to the power change condition of the input signal, input the control voltage into the auxiliary amplification module 15, and use the control voltage as a drain bias voltage of the auxiliary amplification module 15, where the auxiliary amplification module 15 performs amplification processing on the second sub-signal according to the drain bias voltage to obtain an amplified second sub-signal. Finally, the signal combining module 17 is configured to combine the received amplified first sub-signal and the amplified second sub-signal.
Specifically, the main amplifying module 14 includes a main power amplifying circuit 14a connected to the signal separating module 13 and a first impedance converting circuit 14b connected to the main power amplifying circuit 14a, and the first impedance converting circuit 14b is connected to the signal combining module 17. The auxiliary amplification module 15 includes a second impedance conversion circuit 15a connected to the signal splitting module 13 and an auxiliary power amplification circuit 15b connected to the second impedance conversion circuit 15 a. Preferably, the first impedance transformation circuit 14b is a quarter-wavelength impedance transformation microstrip transmission line, and the resistance value thereof is 50 Ω; the second impedance conversion circuit 15a is a quarter-wavelength impedance conversion microstrip transmission line, and the resistance value thereof is 50 Ω. The first impedance conversion circuit 14b and the second impedance conversion circuit 15a may be configured by other types of impedance conversion circuits, and are not limited to the quarter-wavelength impedance conversion microstrip transmission line.
Referring to fig. 4, the drain voltage regulation module 16 includes a wave detection unit 16a connected to the coupler, a control unit 16b connected to the wave detection unit, and a power conversion unit 16c connected to the control unit 16b, and the power conversion unit 16c is connected to the auxiliary amplification module 15.
Referring to fig. 5 and 6, in particular, the detecting unit 16a includes a signal detecting circuit 26 connected to the coupler 11 and a signal processing circuit 27 connected to the signal detecting circuit 26. The control unit 16b includes a signal amplification circuit 28 connected to the signal processing circuit 27, and a signal modulation circuit 29 connected to the signal amplification circuit 28 and the power conversion unit 16c, respectively.
The signal detecting circuit 26 is configured to detect a peak voltage of the second signal in each signal period, and then send the detected peak voltage to the signal processing circuit 27, where the signal processing circuit 27 performs a smoothing process on the peak voltage to form an envelope voltage signal with power varying with time and sends the envelope voltage signal to the signal amplifying circuit 28, for example, the signal processing circuit 27 is an integrating circuit, and an integrating time of the integrating circuit may be adjusted according to actual needs. The signal amplifying circuit 28 amplifies the envelope voltage signal and sends the amplified envelope voltage signal to the signal modulating circuit 29, wherein the amplification factor of the signal amplifying circuit 28 can be adjusted according to the actual situation of the signal sent by the signal source 10, so as to obtain the optimal average efficiency and linearity. The signal modulation circuit 29 generates a Pulse Width Modulation (PWM) signal with a corresponding duty ratio according to the amplified envelope voltage signal and transmits the PWM signal to the power conversion unit 16c, and the power conversion unit 16c converts a fixed input voltage into a control voltage varying with an output signal of the control unit 16b according to the duty ratio of the PWM signal and transmits the control voltage to the auxiliary amplification module 15 as a drain bias voltage of the auxiliary amplification module 15.
Referring to fig. 7, the main power amplifying circuit 14a includes a first input matching circuit 20, a first transistor 21, and a first output matching circuit 22. The first input matching circuit 20 is connected to the signal splitting block 13, the first transistor 21 is connected to the first input matching circuit 20, and the first output matching circuit 22 is connected to the first transistor 21 and the first impedance conversion circuit 14b, respectively. The first transistor 21 may be LDMOS, GaN, or GaAs, among others.
The first input matching circuit 20 receives the first sub-signal sent by the signal separation module 13 and matches the output impedance of the signal separation module 13 with the input impedance of the first transistor 21, the first transistor 21 amplifies the first sub-signal to obtain an amplified first sub-signal and sends the amplified first sub-signal to the first output matching circuit 22, the first output matching circuit 22 matches the impedance of the first transistor 21 when the first transistor is backed off with the input impedance of the signal combination module 17, and the first impedance conversion circuit 14b is configured to invert the impedance of the main amplification module 14.
Referring to fig. 8, the auxiliary power amplifying circuit 15b includes a second input matching circuit 23, a second transistor 24, and a second output matching circuit 25. The second input matching circuit 23 is connected to the second impedance conversion circuit 15a, the second transistor 24 is connected to the second input matching circuit 23, and the second output matching circuit 25 is connected to the second transistor 24, the power conversion unit 16c, and the signal combining module 17, respectively. The second transistor 24 may be LDMOS, GaN, or GaAs. In the actual operation process, the second transistor 24 can be reasonably selected according to the power of the first transistor 21, so that the second transistor 24 sufficiently pulls the impedance of the main amplification module 14, thereby improving the efficiency of the whole asymmetric Doherty amplifier in power back-off.
The second impedance converting circuit 15a is configured to perform phase delay on the received second sub-signal and send the delayed second sub-signal to the second input matching circuit 23, the second input matching circuit 23 matches the output impedance of the signal separating module 13 with the input impedance of the second transistor 24, the second transistor 24 amplifies the delayed second sub-signal to obtain an amplified second sub-signal and sends the amplified second sub-signal to the second output matching circuit 25, and the second output matching circuit 25 matches the impedance of the second transistor 24 with the input impedance of the signal combining module 17.
Example 2
Referring to fig. 9, the difference between this embodiment and embodiment 1 is that the asymmetric Doherty amplifier is a multi-stage asymmetric Doherty amplifier, which includes n auxiliary amplification modules 15 connected in parallel, where n is an integer greater than 1, and the n auxiliary amplification modules 15 connected in parallel and the main amplification module 14 form an n + 1-stage asymmetric Doherty amplifier.
Each auxiliary amplification module 15 of the n auxiliary amplification modules is connected to the signal separation module 13 and the signal combining module 17, and the drain voltage regulation and control module 16 is connected to the coupler 11, the n auxiliary amplification modules 15, and the signal combining module 17. The control voltages generated by the drain voltage adjusting module 16 are respectively input to the n auxiliary amplifying modules 15 as drain bias voltages of the n auxiliary amplifying modules 15. Here, the circuit parameters of the n auxiliary amplification modules 15 may be the same, or different circuit parameters may be selected according to actual needs. The specific circuit structure of the multistage asymmetric Doherty amplifier of this embodiment is similar to that of embodiment 1, and is not described here again.
Example 3
Referring to fig. 10, the difference between this embodiment and embodiment 1 is that the asymmetric Doherty amplifier is a multi-stage asymmetric Doherty amplifier, and includes n auxiliary amplification modules 15 connected in parallel and n drain voltage regulation modules 16 corresponding to the auxiliary amplification modules 15, where n is an integer greater than 1, and the n auxiliary amplification modules 15 connected in parallel and the main amplification module 14 form an n + 1-stage asymmetric Doherty amplifier.
Each auxiliary amplification module 15 of the n auxiliary amplification modules is connected to the signal separation module 13 and the signal combining module 17, each drain voltage regulation and control module 16 of the n drain voltage regulation and control modules 16 is connected to the coupler 11, the corresponding auxiliary amplification module 15, and the signal combining module 17, and the n drain voltage regulation and control modules 16 generate n control voltages which are input to the n auxiliary amplification modules 15 in a one-to-one correspondence manner and serve as drain bias voltages of the n auxiliary amplification modules 15. Here, the circuit parameters of the n auxiliary amplification modules 15 may be the same, or different circuit parameters may be selected according to actual needs, and the circuit parameters of the n drain voltage adjustment modules 16 may be the same, or different circuit parameters may be selected according to actual needs. The specific circuit structure of the multistage asymmetric Doherty amplifier of this embodiment is similar to that of embodiment 1, and is not described here again.
The foregoing is directed to embodiments of the present application and it is noted that numerous modifications and adaptations may be made by those skilled in the art without departing from the principles of the present application and are intended to be within the scope of the present application.

Claims (7)

1. An asymmetric Doherty amplifier comprises a signal separation module, a main amplification module, at least one auxiliary amplification module and a signal combining module; the asymmetric Doherty amplifier is characterized by further comprising a coupler, a signal delay module and at least one drain voltage regulation and control module; the coupler sends a received input signal to a signal delay module, the signal delay module delays the received input signal and sends the delayed input signal to the signal separation module, the signal separation module separates the delayed input signal and sends the separated input signal to the main amplification module and the auxiliary amplification module, and the main amplification module and the auxiliary amplification module respectively amplify and input the signal separated by the signal separation module to the signal combination module; the drain voltage regulation and control module is connected between the coupler and the auxiliary amplification module, is used for detecting the power change of the input signal from the coupler, generates corresponding control voltage according to the power change condition of the input signal, inputs the control voltage into the auxiliary amplification module and serves as drain bias voltage of the auxiliary amplification module, and comprises a detection unit, a control unit and a power conversion unit which are sequentially connected; the detection unit is used for detecting the power of the input signal from the coupler and forming a voltage signal which changes along with the power according to the power of the input signal; the control unit amplifies the voltage signal output by the detection unit and generates a corresponding PWM control signal; the power supply conversion unit generates corresponding control voltage according to the PWM control signal and inputs the control voltage into the auxiliary amplification module, the detection unit comprises a signal detection circuit and a signal processing circuit, the signal detection circuit is used for detecting peak voltage in each period of the input signal from the coupler and sending the peak voltage to the signal processing circuit, the signal processing circuit is used for smoothly processing the peak voltage to form the voltage signal, the control unit comprises a signal amplification circuit and a signal modulation circuit, the signal amplification circuit receives the voltage signal and amplifies the voltage signal, and the signal modulation circuit receives the amplified voltage signal and generates a corresponding PWM control signal according to the amplified voltage signal.
2. The asymmetric Doherty amplifier of claim 1 wherein the main amplification block comprises a main power amplification circuit and a first impedance transformation circuit; the main power amplifying circuit is connected with the signal separating module and then connected to the first impedance conversion circuit, and the first impedance conversion circuit is connected with the main power amplifying circuit and then connected to the signal combining module.
3. The asymmetric Doherty amplifier of claim 2 wherein the main power amplifying circuit comprises a first input matching circuit, a first transistor and a first output matching circuit connected in series; the first input matching circuit is connected to the signal splitting module, and the first output matching circuit is connected to the first impedance transformation circuit.
4. The asymmetric Doherty amplifier of claim 1 wherein the auxiliary amplification module comprises a second impedance transformation circuit and an auxiliary power amplification circuit; the second impedance conversion circuit is connected with the signal separation module and then connected to the auxiliary power amplification circuit, and the auxiliary power amplification circuit is connected with the second impedance conversion circuit and then connected to the signal combination module.
5. The asymmetric Doherty amplifier of claim 4, wherein the auxiliary power amplifying circuit comprises a second input matching circuit, a second transistor and a second output matching circuit connected in sequence; the second input matching circuit is connected to the second impedance conversion circuit, and the second output matching circuit is connected to the signal combining module; the drain bias voltage of the second transistor is controlled by the drain voltage regulation module.
6. The asymmetric Doherty amplifier of any one of claims 1 to 5, wherein the asymmetric Doherty amplifier comprises n auxiliary amplification blocks and 1 drain voltage regulation and control block, and the control voltages generated by the drain voltage regulation and control block are respectively input to the n auxiliary amplification blocks as drain bias voltages of the n auxiliary amplification blocks;
wherein n is an integer greater than or equal to 1.
7. The asymmetric Doherty amplifier of any one of claims 1 to 5, wherein the asymmetric Doherty amplifier comprises n auxiliary amplification modules and n drain voltage regulation modules, wherein the n drain voltage regulation modules generate n control voltages which are input to the n auxiliary amplification modules in a one-to-one correspondence manner as drain bias voltages of the n auxiliary amplification modules;
wherein n is an integer greater than 1.
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KR102491944B1 (en) * 2017-12-27 2023-01-25 삼성전기주식회사 Power amplifier with asymmetric amplification structure for improving linearity
CN110417366B (en) * 2019-08-20 2024-09-24 上海联影医疗科技股份有限公司 Radio frequency power amplifier control device and radio frequency power amplifier
CN118590023A (en) * 2024-08-06 2024-09-03 成都威频科技有限公司 Low-phase-noise gain adjusting circuit and implementation method

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008012898A1 (en) * 2006-07-27 2008-01-31 Panasonic Corporation Power amplifying apparatus
CN201398177Y (en) * 2009-03-17 2010-02-03 京信通信系统(中国)有限公司 Doherty power amplifier
CN201426111Y (en) * 2009-04-17 2010-03-17 京信通信系统(中国)有限公司 Doherty envelope tracking power amplifier
CN101834571A (en) * 2010-05-13 2010-09-15 上海图越电子有限公司 Efficient linear power amplifier circuit
CN102355198A (en) * 2011-08-01 2012-02-15 深圳大学 Multi-path asymmetrical Doherty power amplifier
CN102545788A (en) * 2011-12-29 2012-07-04 武汉正维电子技术有限公司 Multi-way asymmetrical Doherty amplifier
CN202424626U (en) * 2011-12-29 2012-09-05 武汉正维电子技术有限公司 Multichannel asymmetric Doherty amplifier
CN102694508A (en) * 2012-05-02 2012-09-26 张光来 Multi-channel Doherty amplifier
KR20130090511A (en) * 2012-02-06 2013-08-14 한국산업기술대학교산학협력단 Doherty amplifier comprising drain bias boost or modulation circuit of peaking amplifier
CN104184418A (en) * 2013-05-23 2014-12-03 恩智浦有限公司 Doherty amplifier

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008012898A1 (en) * 2006-07-27 2008-01-31 Panasonic Corporation Power amplifying apparatus
CN201398177Y (en) * 2009-03-17 2010-02-03 京信通信系统(中国)有限公司 Doherty power amplifier
CN201426111Y (en) * 2009-04-17 2010-03-17 京信通信系统(中国)有限公司 Doherty envelope tracking power amplifier
CN101834571A (en) * 2010-05-13 2010-09-15 上海图越电子有限公司 Efficient linear power amplifier circuit
CN102355198A (en) * 2011-08-01 2012-02-15 深圳大学 Multi-path asymmetrical Doherty power amplifier
CN102545788A (en) * 2011-12-29 2012-07-04 武汉正维电子技术有限公司 Multi-way asymmetrical Doherty amplifier
CN202424626U (en) * 2011-12-29 2012-09-05 武汉正维电子技术有限公司 Multichannel asymmetric Doherty amplifier
KR20130090511A (en) * 2012-02-06 2013-08-14 한국산업기술대학교산학협력단 Doherty amplifier comprising drain bias boost or modulation circuit of peaking amplifier
CN102694508A (en) * 2012-05-02 2012-09-26 张光来 Multi-channel Doherty amplifier
CN104184418A (en) * 2013-05-23 2014-12-03 恩智浦有限公司 Doherty amplifier

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