CN107293605A - Back electrode of solar cell and solar cell and preparation method thereof - Google Patents
Back electrode of solar cell and solar cell and preparation method thereof Download PDFInfo
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- CN107293605A CN107293605A CN201610206013.3A CN201610206013A CN107293605A CN 107293605 A CN107293605 A CN 107293605A CN 201610206013 A CN201610206013 A CN 201610206013A CN 107293605 A CN107293605 A CN 107293605A
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- back electrode
- glass substrate
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- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 107
- 239000011521 glass Substances 0.000 claims abstract description 104
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 230000005611 electricity Effects 0.000 claims abstract description 17
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 77
- 229910052750 molybdenum Inorganic materials 0.000 claims description 77
- 239000011733 molybdenum Substances 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 69
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 29
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 26
- 238000004544 sputter deposition Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 19
- 239000005361 soda-lime glass Substances 0.000 claims description 19
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 18
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 16
- 229910052802 copper Inorganic materials 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 239000011787 zinc oxide Substances 0.000 claims description 14
- 229910052786 argon Inorganic materials 0.000 claims description 13
- 229910000611 Zinc aluminium Inorganic materials 0.000 claims description 11
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 11
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 10
- 229910052709 silver Inorganic materials 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052697 platinum Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 6
- 239000005385 borate glass Substances 0.000 claims description 5
- 239000005357 flat glass Substances 0.000 claims description 5
- 238000001771 vacuum deposition Methods 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000005365 phosphate glass Substances 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims 2
- 150000003839 salts Chemical class 0.000 claims 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims 1
- 239000004327 boric acid Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 105
- 239000010408 film Substances 0.000 description 40
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 12
- 239000000523 sample Substances 0.000 description 12
- 238000000151 deposition Methods 0.000 description 9
- 238000007747 plating Methods 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 229910003310 Ni-Al Inorganic materials 0.000 description 4
- 239000002196 Pyroceram Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 229910052793 cadmium Inorganic materials 0.000 description 3
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 caddy Chemical compound 0.000 description 1
- LHQLJMJLROMYRN-UHFFFAOYSA-L cadmium acetate Chemical compound [Cd+2].CC([O-])=O.CC([O-])=O LHQLJMJLROMYRN-UHFFFAOYSA-L 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- ZGHDMISTQPRNRG-UHFFFAOYSA-N dimolybdenum Chemical compound [Mo]#[Mo] ZGHDMISTQPRNRG-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 238000007430 reference method Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention relates to area of solar cell, back electrode of solar cell and solar cell and preparation method thereof are disclosed.The back electrode of solar cell includes glass substrate and the hearth electrode being attached on the non-tin face of the glass substrate, wherein, the back electrode of solar cell also includes the supporting layer being attached on the glass substrate tin face.The deformation of the back electrode of solar cell is controllable, therefore yield rate can be increased substantially during industrialization large-scale production, at the same time, the back electrode of solar cell can be coated with absorbed layer at relatively high temperatures, so as to improve the electricity conversion of solar cell.
Description
Technical field
The present invention relates to area of solar cell, in particular it relates to a kind of back electrode of solar cell, one
The preparation method of kind back electrode of solar cell, a kind of solar cell, a kind of preparation of solar cell
Method and the solar cell prepared by this method.
Background technology
Because fossil energy is petered out, novel energy such as solar energy, wind energy gradually rises.Solar-electricity
Pond is various, safe without dirt with installation form as a kind of device directly converted solar energy into electrical energy
Dye, inexhaustible, nexhaustible advantage, are greatly developed in recent years.
CIGS (CIGS) thin-film solar cells as a kind of very important solar cell,
Its hearth electrode (molybdenum layer or the chromium that generally include glass substrate and be sequentially laminated on the non-tin face of glass substrate
Layer), absorbed layer, cadmium sulfide layer, zinc oxide film, zinc aluminium oxide layer and preceding electrode (Ni-Ag layers or Ni-Al
Layer etc.), wherein, one layer of hearth electrode film is coated with the glass substrate is commonly refereed to as back electrode.Bottom electricity
Extremely generally formed using direct current magnetron sputtering process, specifically, under vacuum conditions, be passed through argon gas and ionize
Into Ar+, Ar+Molybdenum or chromium target, the atom or atomic group bombarded are bombarded under the acceleration under cathode voltage
Deposit to and film is formed on glass substrate, wherein, depositing temperature is usually normal temperature to 200 DEG C.Absorbed layer
Generally using three steps, vapour deposition method is formed altogether, specifically, is deposited altogether after base reservoir temperature is risen into about 300 DEG C
(In, Ga) is made in In-Ga-Se2Se3Layer, is then shut off In sources, Ga sources and Se sources, temperature is risen to about
550 DEG C, Cu sources are opened, copper-rich cigs layer is made, are then prepared on copper-rich cigs layer surface a small amount of
In-Ga-Se layers so that the poor copper of cigs layer.Cadmium sulfide layer is generally formed using chemical bath method, specifically
Ground, cadmium source (such as cadmium sulfate, caddy, cadmium acetate) system is prepared using chemical bath method and vulcanized
Cadmium (CdS) layer, depositing temperature is usually 60-90 DEG C.Zinc oxide film and zinc aluminium oxide layer can be adopted
Formed with radio-frequency magnetron sputter method, specifically, under vacuum conditions, be passed through argon gas and be ionized into Ar+,
Ar+Bombard ZnO target material and ZnO respectively under the acceleration of cathode voltage:Al targets, the ZnO bombarded
Atom or atomic group, ZnO:Al atoms or atomic group deposit to form film, wherein, depositing temperature is usual
It is normal temperature to 200 DEG C.Preceding electrode is generally formed using electron-beam vapor deposition method, specifically, in vacuum condition
Under, evaporate material Ni-Ag or Ni-Al etc. using high-energy electron beam heating, make evaporation material gasify and to
Substrate transport, condenses on substrate and forms film.
Research shows, when glass substrate is pyroceram, due to that can be coated with higher temperatures
Absorbed layer, it is thus possible to improve the electricity conversion of CIGS thin film solar cell.For example, in text
Offer and " Cu (In, Ga) Se is improved due to higher depositing temperature2The homogeneity and open-circuit voltage of battery " (J.
Haarstrich,H.Metzner,M.Oertel,Solar Energy Materials&Solar Cells,95(2011)
In 1028-1030), Schott AG pyrocerams are employed as glass substrate, are as a result shown, with
Compared using common soda lime glass as the solar cell of glass substrate, the solar cell can be reduced
Ga genesis analysis gradient in absorbed layer, lifts the common 90mV of open-circuit voltage, finally causes photoelectric conversion
Improved efficiency 1.6%, even up to 19.4%.But, although substituted using pyroceram common
Soda-lime glass can improve the electricity conversion of solar cell as glass substrate, but battery cost
Also it can significantly improve, and can not still overcome uncontrollable deformation caused by each stress in thin film under high temperature.This
Outside, because the modulus of elasticity of soda-lime glass declines with the rising of temperature, relatively low stress at high temperature
Larger deformation will be caused, and it is uncontrollable by the deformation quantity produced by thermal softening, this can cause
When producing in enormous quantities, it is difficult to control the uniformity of product quality, be unfavorable for the production of thin-film solar cells
Industryization is applied and promoted.
The content of the invention
The invention aims to provide a kind of deformation it is controllable and with relatively low square resistance solar energy
Battery back electrode, a kind of preparation method of back electrode of solar cell, a kind of solar cell, Yi Zhongtai
The preparation method of positive energy battery and the solar cell prepared by this method.
As a rule, on the one hand, the modulus of elasticity of glass substrate declines with the rising of temperature, temperature
Modulus of elasticity is remarkably decreased when rising to its softening point (about 550 DEG C) nearby, now in less stress
Effect is lower can to produce larger deformation；On the other hand, CIGS hull cell generally comprises seven layer films,
Thickness per thin film is different with depositing temperature, and the stress situation of introducing is different, will so cause film
The controllability of battery deformation is poor, and in CIGS hull cell production process, because of layers of material
It is different that the coefficient of expansion is different, each film layer is coated with temperature, it will more complicated stress is produced in film layer system,
Especially in depositing CIGS absorber layer, depositing temperature is generally higher, may be up to about 550 DEG C, now,
The modulus of elasticity of glass substrate is remarkably decreased, under the stress of hearth electrode and CIGS absorbed layers, glass
Glass substrate will produce larger deformation, so as to will cause film layer cracking or hole occur, change the crystalline substance of material
Lattice constant, reduction battery efficiency.
And the present inventor has found after further investigation, in existing CIGS thin film solar-electricity
On the tin face of the glass substrate in pond extension supporting layer, on the one hand can effectively offset under subsequent high temperature processes because
Bending Deformation caused by glass modulus decline and film residual stress, leads so as to reduce because of deformation
The film separation or cracking of cause；On the other hand the tolerable temperature of back electrode of solar cell can be improved,
Other coatings particularly absorbed layer can be so coated with a higher temperature, so that absorbed layer crystal grain is long
Greatly the uniformity of absorbed layer is scattered and improved to reduce crystal boundary, and then improve its electricity conversion.It is based on
Above-mentioned discovery, completes the present invention.
Specifically, the invention provides back electrode of solar cell, the back electrode of solar cell includes glass
Glass substrate and the hearth electrode being attached on the non-tin face of the glass substrate, wherein, solar battery back electricity
Pole also includes the supporting layer being attached on the glass substrate tin face.
Present invention also offers a kind of preparation method of back electrode of solar cell, this method is included in glass
Hearth electrode is formed on the non-tin face of substrate, wherein, this method is additionally included on the tin face of the glass substrate
Form supporting layer.
Present invention also offers a kind of solar cell, the solar cell includes solar battery back electricity
Pole and the absorbed layer being sequentially laminated on the hearth electrode of the back electrode of solar cell, cadmium sulfide layer,
Zinc oxide film, zinc aluminium oxide layer and preceding electrode, wherein, the back electrode of solar cell is the above-mentioned sun
Can battery back electrode.
Present invention also offers a kind of preparation method of solar cell, this method is included in solar cell
Absorbed layer, cadmium sulfide layer, zinc oxide film, zinc aluminium oxide layer and preceding are sequentially formed on the hearth electrode of back electrode
Electrode, wherein, the back electrode of solar cell is formed according to the method described above.
In addition, present invention also offers the solar cell prepared by the above method.
The deformation for the back electrode of solar cell that the present invention is provided is controllable, therefore in industrialization large-scale production
When yield rate can increase substantially.At the same time, the back electrode of solar cell can improve absorbed layer
Be coated with temperature, so as to improve the electricity conversion of solar cell.
A preferred embodiment of the invention, when the supporting layer is molybdenum layer, forms the branch
The method of layer is supportted for direct current magnetron sputtering process, and the direct current magnetron sputtering process includes：Under vacuum
Using metal molybdenum as target, the glass substrate is heated, argon gas is passed through and enters under the first condition of high voltage
The processing of the magnetically controlled DC sputtering of row first, obtains the first hyperbar layer, second is then carried out under lower pressure
Magnetically controlled DC sputtering processing, obtains low pressure layer, then carries out the 3rd direct current under the second condition of high voltage again
Magnetron sputtering processing, obtains the second hyperbar layer, the pressure of first condition of high voltage and the second condition of high voltage
Power is each independently 0.7-1.0Pa, can be more aobvious when the pressure of the lower pressure is 0.1-0.5Pa
Write the square resistance of ground reduction back electrode of solar cell and and then improve the light of corresponding solar cell
Electric transformation efficiency.
Other features and advantages of the present invention will be described in detail in subsequent embodiment part.
Brief description of the drawings
Accompanying drawing is, for providing a further understanding of the present invention, and to constitute a part for specification, with
Following embodiment is used to explain the present invention together, but is not construed as limiting the invention.
In accompanying drawing：
The structural representation for the back electrode of solar cell that Fig. 1 provides for the present invention；
The deformation quantity for the back electrode of solar cell that Fig. 2 provides for the present invention is the situation of timing；
The situation when deformation quantity for the back electrode of solar cell that Fig. 3 provides for the present invention is negative.
Description of reference numerals
1- hearth electrodes；2- glass substrates；3- supporting layers；4- films
Embodiment
The embodiment to the present invention is described in detail below.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
The end points and any value of disclosed scope are not limited to the accurate scope or value herein, this
A little scopes or value should be understood to comprising the value close to these scopes or value.For number range, respectively
Between the endpoint value of individual scope, between the endpoint value of each scope and single point value, and individually point
Can be combined with each other between value and obtain one or more new number ranges, these number ranges should by regarding
For specific disclosure herein.
As shown in figure 1, the back electrode of solar cell that the present invention is provided includes glass substrate 2 and is attached to
Hearth electrode 1 on the non-tin face of glass substrate 2, wherein, the back electrode of solar cell also includes attached
The supporting layer 3 on the glass substrate tin face.
According to the present invention, the supporting layer various can be prevented effectively from subsequent high temperature work using existing
(can effectively it be kept away with Bending Deformation caused by film residual stress under skill because glass modulus declines
Exempt from glass substrate and non-reversible deformation occur) material formed, preferably molybdenum layer, layers of chrome, layer gold, nickel dam,
At least one of platinum layer, silver layer, layers of copper and silicon oxide layer, more preferably molybdenum layer, layers of chrome and silica
At least one of layer, particularly preferably molybdenum layer.The supporting layer can be one layer, can also be by multilayer
Constitute.When the supporting layer is made up of multilayer, the material and formation process of multilayer can with identical,
Can be different.In addition, the thickness of the supporting layer generally depend on back electrode of solar cell high temperature/
Stress intensity suffered during absorbed layer is coated with, itself and the hearth electrode being attached on the non-tin face of the glass substrate
Thickness can be with identical, can also be different, and be each independently 400-1500nm.Particularly preferably
Ground, the thickness of hearth electrode of the supporting layer with being attached on the non-tin face of the glass substrate is identical, and
For 400-1500nm.
The present invention is not particularly limited to the material of the hearth electrode, for example, can for molybdenum layer, layers of chrome,
At least one of layer gold, nickel dam, platinum layer, silver layer and layers of copper, preferably molybdenum layer and/or layers of chrome, especially
Preferably molybdenum layer.In addition, most preferably, the supporting layer and hearth electrode are made from identical material.
The glass substrate can be simple glass plate, or pyroceram plate, be specifically as follows
At least one of soda-lime glass plate, borate glass plate and phosphate glass plate, preferably soda-lime glass
Plate and/or borate glass plate.In addition, the thickness of the glass substrate typically 10-35mm,
Preferably 25-33mm.
The preparation method for the back electrode of solar cell that the present invention is provided is included in the non-tin face of glass substrate
Upper formation hearth electrode, wherein, this method is additionally included on the tin face of the glass substrate and forms supporting layer.
According to the present invention, as described above, the supporting layer various be able to can be prevented effectively from using existing
Because glass modulus declines with Bending Deformation caused by film residual stress (i.e. under subsequent high temperature processes
Glass substrate can be prevented effectively from and non-reversible deformation occur) material formed, preferably molybdenum layer, layers of chrome,
At least one of layer gold, nickel dam, platinum layer, silver layer, layers of copper and silicon oxide layer, more preferably molybdenum layer,
At least one of layers of chrome and silicon oxide layer, particularly preferably molybdenum layer.The supporting layer can be one layer,
It can also be made up of multilayer.When the supporting layer is made up of multilayer, the material and formation process of multilayer
Can be with identical, can also be different.In addition, the thickness of the supporting layer generally depends on solar battery back
The electrode stress intensity suffered in high temperature/be coated with absorbed layer, it is with being attached to the non-tin face of the glass substrate
On the thickness of hearth electrode can be with identical, can also be different, and be each independently 400-1500nm.
It is particularly preferred that the supporting layer and the thickness phase for the hearth electrode being attached on the non-tin face of the glass substrate
Together, and be 400-1500nm.
The present invention is not particularly limited to the forming method of the supporting layer, it is for instance possible to use magnetic control
The methods such as sputtering method, evaporation coating method, electrochemical deposition method are formed.For example, when the supporting layer is molybdenum
During layer, the method for forming the supporting layer is preferably direct current magnetron sputtering process, and the magnetically controlled DC sputtering
Method includes：Under vacuum using metal molybdenum as target, the glass substrate is heated, argon gas is passed through
And the first magnetically controlled DC sputtering processing is carried out under the first condition of high voltage, the first hyperbar layer is obtained, then
The second magnetically controlled DC sputtering processing is carried out under lower pressure, low pressure layer is obtained, it is then high second again
The processing of the 3rd magnetically controlled DC sputtering is carried out under the conditions of pressure, the second hyperbar layer, first high-pressure section is obtained
The pressure of part and the second condition of high voltage is each independently 0.7-1Pa, and the pressure of the lower pressure is
0.1-0.5Pa, the supporting layer so enabled to is essentially high density molybdenum layer-low-density molybdenum layer-highly dense
Spend molybdenum layer three-decker, so as to more effectively reduce back electrode of solar cell deformation curvature,
Significantly more reduce the square resistance and and then the corresponding solar cell of raising of back electrode of solar cell
Electricity conversion.
According to the present invention, during above-mentioned formation supporting layer, the first magnetically controlled DC sputtering processing
Time can be 400-600s, preferably 430-470s；Second magnetically controlled DC sputtering processing when
Between can be 3000-4000s, preferably 3500-3600s；3rd magnetically controlled DC sputtering processing when
Between can be 20-150s, preferably 100-140s.
The present invention is not particularly limited to the condition for being heated the glass substrate, for example, generally
It can be 80-200 DEG C, preferably 100-150 DEG C including heating-up temperature.
In addition, when supporting layer is molybdenum layer, in order to be more beneficial for the formation of supporting layer, the direct magnetic control
Sputtering method is preferably also included in glass substrate is heated before, the cleaning glass substrate is clean.
The cleaning can be carried out according to existing various methods, as long as can be by the pollutant of glass baseplate surface
Matter is fully removed.Include according to a kind of embodiment of the present invention, the step of the cleaning：
By glass substrate be placed in hydrochloric acid solution be cleaned by ultrasonic 10-30 minute, taking-up and with deionized water rinsing with
Residual acid solution is removed, then glass substrate is placed in absolute ethyl alcohol and is cleaned by ultrasonic 10-30 minutes, is taken out
And with deionized water rinsing to remove residual ethanol liquid, glass substrate is then placed in ultrasound in pure water clear
Wash 10-30 minutes, remove and dried up with nitrogen standby.
In addition, when the supporting layer is layers of chrome, the method for forming the supporting layer is preferably direct magnetic control
Sputtering method, and the direct current magnetron sputtering process includes：, will under vacuum using crome metal as target
The glass substrate heating, is passed through argon gas and carries out magnetically controlled DC sputtering processing.Wherein, it is described herein straight
It is 0.1-1Pa to flow the condition of magnetron sputtering processing to include processing pressure, and processing time then usually requires basis
The thickness of hearth electrode is determined, and it is with by the shape of the back electrode of solar cell finally obtained to determine principle
Variable is down to sufficiently low (± 25 μm) and is defined.
When the supporting layer is silicon dioxide layer, the method for forming the supporting layer is preferably radio frequency magnetron
Sputtering method, and the radio-frequency magnetron sputter method can specifically include：Under vacuum, it is passed through argon gas
20-40sccm, then by controlling cold pump plate valve to adjust air pressure to 0.1-1Pa, build-up of luminance and pre-sputtering
5-20min, the then deposited silicon dioxide layer on glass substrate tin face.Wherein, the thickness of silicon dioxide layer
Degree needs to be determined according to the thickness of hearth electrode, and it is with by the solar cell finally obtained to determine principle
The deformation quantity of back electrode is down to sufficiently low (± 25 μm) and is defined.
As described above, the present invention is not particularly limited to the material of the hearth electrode, for example, can be
At least one of molybdenum layer, layers of chrome, layer gold, nickel dam, platinum layer, silver layer and layers of copper, preferably molybdenum layer and
/ or layers of chrome, particularly preferably molybdenum layer.In addition, most preferably, the supporting layer and hearth electrode are from identical
Material be made.
The hearth electrode can be formed using existing various methods, it is for instance possible to use direct magnetic control splashes
The method of penetrating is formed.Specifically, under vacuum conditions, it is passed through argon gas and is ionized into Ar+, Ar+In cathode voltage
Under acceleration under bombardment target (at least one of molybdenum, chromium, gold, nickel, platinum, silver and copper), banged
The atom or atomic group hit, which is deposited to, forms film on glass substrate, wherein, depositing temperature is usually normal temperature
To 200 DEG C.
The glass substrate can be simple glass plate, or pyroceram plate, be specifically as follows
At least one of soda-lime glass plate, borate glass plate and phosphate glass plate, preferably soda-lime glass
Plate and/or borate glass plate.In addition, the thickness of the glass substrate typically 10-35mm,
Preferably 25-33mm.
In addition, during the back electrode of solar cell is prepared, can be first in the glass substrate
Upper formation supporting layer re-forms hearth electrode, hearth electrode first can also be formed on the glass substrate and re-formed
Supporting layer, preferably the former, the surface more smooth of the back electrode of solar cell so enabled to enters
And cause corresponding solar cell that there is higher electricity conversion.
Present invention also offers a kind of solar cell, the solar cell includes solar battery back electricity
Pole, wherein, the back electrode of solar cell is above-mentioned back electrode of solar cell.
Main the improvement is that for the solar cell that the present invention is provided employs a kind of new solar energy
Battery back electrode, and the concrete structure of the solar cell can be with same as the prior art, for example, such as
It is upper described, the solar cell can include back electrode of solar cell and be sequentially laminated on it is described too
Positive absorbed layer that can be on the hearth electrode of battery back electrode, cadmium sulfide layer, zinc oxide film, zinc aluminium oxide layer and
Preceding electrode.Wherein, the absorbed layer is usually CIGS thin-film layer, and the preceding electrode is usually Ni-Ag
Layer or Ni-Al layers.In addition, the thickness of the absorbed layer can be 1000-3000nm, it is preferably
1500-2500nm；The thickness of the cadmium sulfide layer can be 30-70nm, preferably 40-60nm；Institute
The thickness for stating zinc oxide film can be 30-100nm, preferably 40-60nm；The thickness of the zinc aluminium oxide layer
Degree can be 100-300nm, preferably 150-250nm；The thickness of the preceding electrode can be
500-2000nm, preferably 750-1500nm.
Present invention also offers a kind of preparation method of solar cell, the solar cell includes the sun
Energy battery back electrode, wherein, this method includes forming the back electrode of solar cell according to the method described above.
As described above, the concrete structure of the solar cell can be with same as the prior art, for example, can
Including back electrode of solar cell and to be sequentially laminated on the hearth electrode of the back electrode of solar cell
On absorbed layer, cadmium sulfide layer, zinc oxide film, zinc aluminium oxide layer and preceding electrode, therefore correspondingly, institute
The preparation method for stating solar cell is included on the hearth electrode of back electrode of solar cell and sequentially forms suction
Receive layer, cadmium sulfide layer, zinc oxide film, zinc aluminium oxide layer and preceding electrode.The solar-electricity that the present invention is provided
The main of the preparation method in pond thes improvement is that employing a kind of new method prepares solar battery back
Electrode, and the composition of other Rotating fields and generation type can be with same as the prior art.For example, described
Absorbed layer can be CIGS thin-film layer, and the preceding electrode is usually Ni-Ag layers or Ni-Al layers.This
Outside, the thickness of the absorbed layer can be 1000-3000nm, preferably 1500-2500nm；The sulphur
The thickness of cadmium layer can be 30-70nm, preferably 40-60nm；The thickness of the zinc oxide film can be with
For 30-100nm, preferably 40-60nm；The thickness of the zinc aluminium oxide layer can be 100-300nm,
Preferably 150-250nm；The thickness of the preceding electrode can be 500-2000nm, be preferably
750-1500nm.A preferred embodiment of the invention, the absorbed layer uses Vacuum Coating method
Formed, and the temperature of vacuum coating is particularly preferably 500-600 DEG C, more preferably higher than 550 DEG C to 600
DEG C, the absorbed layer so enabled to has higher crystal property and and then caused at relatively high temperatures
Solar cell has higher electricity conversion.
In addition, the preparation method of the solar cell is additionally included in before being formed after electrode, the encapsulation sun
The supporting layer can be peeled off before battery, so be conducive to miniaturization and standardized packages.
Present invention also offers the solar cell prepared by the above method.
The present invention will be described in detail by way of examples below.
In following examples and comparative example：
The thickness of film layer is measured using step instrument (being produced by German Brooker, model Dektak XT).
The square resistance of back electrode using four probe resistance-meters (model Bridge Technology's
RM3000) measure.
The deformation quantity test specification of back electrode of solar cell：Using step instrument (produced by German Brooker,
Model Dektak XT) probe scanning back electrode of solar cell surface, as shown in Figures 2 and 3,
When back electrode of solar cell only sets film 4 in side, (wherein, the film 4 includes hearth electrode
And absorbed layer), using film surface edge as zero point, the deformation quantity of film is calculated, if substrate is given birth to towards film
Length direction is raised, then remembers deformation quantity for just, otherwise be designated as bearing；When the side of back electrode of solar cell is set
When putting film 4, opposite side setting supporting layer, using film surface edge as zero point, the deformation quantity of film is calculated,
If substrate is raised towards the hearth electrode direction of growth, note deformation quantity is designated as bearing for just.Wherein, shape
Variable is to judge qualified within ± 25 μm.
Comparative example 1
The comparative example is used to illustrate back electrode of solar cell of reference and preparation method thereof.
(1) soda-lime glass substrate (size 5cm × 5cm × 3mm) is placed in concentration for 10 weight %
Hydrochloric acid in be cleaned by ultrasonic 20 minutes, then glass substrate is taken out, is rinsed well to go with deionized water
Except residual acid solution, then glass substrate is placed in absolute ethyl alcohol and is cleaned by ultrasonic 20 minutes, then by glass
Substrate takes out, and is rinsed well to remove residual ethanol liquid, is then placed in glass substrate with deionized water
It is cleaned by ultrasonic 20 minutes in ultra-pure water, by the glass substrate N cleaned up2Air gun drying is standby.
(2) the tin face and Fei Xi faces of soda-lime glass substrate are confirmed using tin face instrument.Then by soda-lime glass
Substrate is put into the film plating frame of back electrode magnetron sputtering plating vacuum chamber, and by metal molybdenum, (purity is
99.995%th, thickness is 6mm, similarly hereinafter) as target, DC magnetic is carried out using non-tin face as coated surface
Control, which is sputtered on the non-tin face of glass substrate, forms molybdenum layer.Specifically, base vacuum is taken out to below 4.0E-4Pa,
Glass substrate is heated to after 120 DEG C, 15 minutes to stop heating, argon gas 30sccm is passed through, passes through control
Refrigeration pump plate valve position, adjustment air pressure to 0.7Pa, simultaneously pre-sputtering starts to be coated with first build-up of luminance after 10 minutes
Hyperbar layer, is coated with 450s；Then adjustment air pressure is coated with low pressure layer, is coated with 3540s to about 0.1Pa；
Finally adjustment air pressure is coated with the second hyperbar layer, is coated with 120s, sample is taken out after the completion of being coated with to 0.7Pa
Piece, obtains the back electrode of solar cell DB1 of one side molybdenum, wherein, the thickness of molybdenum layer is 972nm.
(3) absorbed layer is formed on molybdenum layer, specifically：By the solar battery back electricity of above-mentioned one side molybdenum
Pole DB1 temperature rises to 300 DEG C, and In-Ga-Se is then deposited altogether on molybdenum layer using Vacuum Coating method
25min, is made (In, Ga)2Se3Layer, is then switched off In sources, Ga sources and Se sources, temperature is increased to
Temperature is coated with, Cu sources is opened and continues that 30min is deposited, copper-rich cigs layer is made, finally in copper-rich CIGS
The surface of layer continues that In-Ga-Se 10min are deposited altogether, is made a small amount of In-Ga-Se layers so that the poor copper of CIGS.
It has been coated with different temperatures after absorbed layer, the deformation quantity statistical result such as table of back electrode of solar cell
Shown in 1.
Table 1
From the results shown in Table 1, when being only coated with molybdenum layer in the one side of glass substrate, shape under high temperature
Variable has increase tendency, and qualification rate is reduced, and when it is 480-550 DEG C to be coated with temperature, qualification rate is reduced to
30.8%, and under identical process conditions, the back electrode of solar cell deformation obtained by different batches
Amount fluctuation is larger, illustrates that controllability is poor.
Embodiment 1
The embodiment is used to illustrate back electrode of solar cell of the invention provided and preparation method thereof.
(1) soda-lime glass substrate (size 5cm × 5cm × 3mm) is placed in concentration for 10 weight %
Hydrochloric acid in be cleaned by ultrasonic 20 minutes, then glass substrate is taken out, is rinsed well to go with deionized water
Except residual acid solution, then glass substrate is placed in absolute ethyl alcohol and is cleaned by ultrasonic 20 minutes, then by glass
Substrate takes out, and is rinsed well to remove residual ethanol liquid, is then placed in glass substrate with deionized water
It is cleaned by ultrasonic 20 minutes in ultra-pure water, by the glass substrate N cleaned up2Air gun drying is standby.
(2) the tin face and Fei Xi faces of soda-lime glass substrate are confirmed using tin face instrument.Then by soda-lime glass
Substrate is put into the film plating frame of back electrode magnetron sputtering plating vacuum chamber, using metal molybdenum as target, with non-
Tin face carries out magnetically controlled DC sputtering as coated surface and forms molybdenum layer on the non-tin face of glass substrate.Specifically,
Base vacuum is taken out to below 4.0E-4Pa, glass substrate is heated to stop heating after 120 DEG C, 15 minutes,
Argon gas 30sccm is passed through, by controlling cold pump plate valve position, adjustment air pressure is to 0.7Pa, and build-up of luminance simultaneously splashes in advance
Penetrate and start to be coated with the first hyperbar layer after 10 minutes, be coated with 450s；Then air pressure is adjusted to about 0.1Pa,
Low pressure layer is coated with, 3540s is coated with；Finally adjustment air pressure is coated with the second hyperbar layer, plating to 0.7Pa
120s processed, print is taken out after the completion of being coated with, and obtains the back electrode of solar cell DD1 of one side molybdenum, its
In, the thickness of molybdenum layer is 972nm.
(3) sample after taking-up is placed again into vacuum chamber, using tin face as coated surface, according to step
Suddenly the method and condition of (2) form molybdenum supporting layer on the tin face of glass substrate.Taken out after the completion of being coated with
Print, obtains the back electrode of solar cell B1 of two-sided molybdenum, and it includes glass substrate and adhered to respectively
The molybdenum layer of molybdenum supporting layer and Fei Xi faces on glass substrate tin face, wherein, the thickness of molybdenum supporting layer is
972nm.After tested, square resistances of the back electrode of solar cell B1 at 20 DEG C is 0.177 Ω/sq.
(4) absorbed layer is formed on molybdenum layer, specifically：Divide four batches respectively by above-mentioned one side molybdenum
The back electrode of solar cell B1 of back electrode of solar cell DD1 and two-sided molybdenum temperature rises to 300 DEG C,
Then In-Ga-Se 25min are deposited using Vacuum Coating method altogether on molybdenum layer, be made (In, Ga)2Se3Layer,
In sources, Ga sources and Se sources are then switched off, temperature is increased to be coated with 550 DEG C of temperature, Cu sources are opened
Continue that 30min is deposited, copper-rich cigs layer is made, finally continue common steam on the surface of copper-rich cigs layer
In-Ga-Se 10min are plated, a small amount of In-Ga-Se layers are made so that the poor copper of CIGS.Be coated with absorbed layer it
Afterwards, the deformation quantity statistical result of back electrode of solar cell is as shown in table 2.
Table 2
From the results shown in Table 2, when being only coated with molybdenum layer in the one side of glass substrate, deformation quantity is too
Greatly, sample is unqualified；And after molybdenum layer is coated with glass substrate two-sided, institute under different batches
The deformation quantity for obtaining sample is very small, and fluctuates also very little, and it is controllable to illustrate deformation quantity.
Embodiment 2
The embodiment is used to illustrate back electrode of solar cell of the invention provided and preparation method thereof.
(1) it is same as Example 1.
(2) the tin face and Fei Xi faces of soda-lime glass substrate are confirmed using tin face instrument.Then by soda-lime glass
Substrate is put into the film plating frame of back electrode magnetron sputtering plating vacuum chamber, using metal molybdenum as target, with non-
Tin face carries out magnetically controlled DC sputtering as coated surface and forms molybdenum layer on the non-tin face of glass substrate.Specifically
Ground, takes out base vacuum to below 4.0E-4Pa, glass substrate is heated to after 100 DEG C, 15 minutes to stop
Heating, is passed through argon gas 30sccm, by controlling cold pump plate valve position, adjustment air pressure to 0.8Pa, build-up of luminance
And pre-sputtering starts to be coated with the first hyperbar layer after 10 minutes, is coated with 600s；Then adjustment air pressure is to about
0.2Pa, is coated with low pressure layer, is coated with 4000s；Finally adjustment air pressure is coated with the second high gas to 0.9Pa
Laminate layer, is coated with 120s, and print is taken out after the completion of being coated with, and obtains the back electrode of solar cell of one side molybdenum
DD2, wherein, the thickness of molybdenum layer is 854nm.
(3) sample after taking-up is placed again into vacuum chamber, radio frequency is carried out using tin face as coated surface
Magnetron sputtering is coated with silica supporting layer, specifically, using silica as target, is passed through 30sccm
Argon gas, by controlling the position adjustment air pressure of cold pump plate valve to 0.5Pa, build-up of luminance and pre-sputtering 10min
After start to be coated with silica supporting layer.Print is taken out after the completion of being coated with, the solar energy of double-sided coating is obtained
Battery back electrode B2, its titanium dioxide for including glass substrate and being respectively attached on glass substrate tin face
Molybdenum layer on silicon supporting layer and Fei Xi faces, wherein, the thickness of silica supporting layer is 38nm.Through surveying
Examination, square resistances of the back electrode of solar cell B2 at 20 DEG C is 0.193 Ω/sq.
(4) it is divided to solar battery back electricity of two batches respectively in one side molybdenum according to the method for embodiment 1
Absorbed layer is formed on the back electrode of solar cell B2 of pole DD2 and double-sided coating molybdenum layer.It has been coated with suction
Receive after layer, the deformation quantity statistical result of back electrode of solar cell is as shown in table 3.
Table 3
From the results shown in Table 3, when being only coated with molybdenum layer in the one side of glass substrate, deformation quantity is too
Greatly, sample is unqualified；And after film layer is coated with glass substrate two-sided, institute under different batches
The deformation quantity for obtaining sample is very small, and fluctuates also very little, and it is controllable to illustrate deformation quantity.
Embodiment 3
The embodiment is used to illustrate back electrode of solar cell of the invention provided and preparation method thereof.
Method according to embodiment 1 prepares back electrode of solar cell, unlike, not using three stages
Direct current magnetron sputtering process formation molybdenum supporting layer and molybdenum layer, are comprised the following steps that：
(1) it is same as Example 1.
(2) the tin face and Fei Xi faces of soda-lime glass substrate are confirmed using tin face instrument.Then by soda-lime glass
Substrate is put into the film plating frame of back electrode magnetron sputtering plating vacuum chamber, using metal molybdenum as target, with non-
Tin face carries out magnetically controlled DC sputtering as coated surface and forms molybdenum layer on the non-tin face of glass substrate.Specifically,
Base vacuum is taken out to below 4.0E-4Pa, glass substrate is heated to stop heating after 120 DEG C, 15 minutes,
Argon gas 30sccm is passed through, by controlling cold pump plate valve position, adjustment air pressure is to 0.5Pa, and build-up of luminance simultaneously splashes in advance
Penetrate and start to be coated with molybdenum layer after 10 minutes, be coated with the time for 4110s, take out print after the completion of being coated with, obtain
The back electrode of solar cell DD3 of one side molybdenum, wherein, the thickness of molybdenum layer is 1028nm.
(3) sample after taking-up is placed again into vacuum chamber, using tin face as coated surface, according to step
Suddenly the method and condition of (2) form molybdenum supporting layer on the tin face of glass substrate.Taken out after the completion of being coated with
Print, obtains the back electrode of solar cell B3 of two-sided molybdenum, and it includes glass substrate and adhered to respectively
The molybdenum layer on molybdenum supporting layer and Fei Xi faces on glass substrate tin face, wherein, the thickness of molybdenum supporting layer is
1028nm.After tested, square resistances of the back electrode of solar cell B3 at 20 DEG C is 0.213 Ω
/sq。
(4) according to the method for embodiment 1 respectively in the back electrode of solar cell DD3 of one side molybdenum and double
Absorbed layer is formed on the back electrode of solar cell B3 of face molybdenum molybdenum layer.It has been coated with after absorbed layer, too
The deformation quantity statistical result of positive energy battery back electrode is as shown in table 4.
Table 4
From the results shown in Table 4, when being only coated with molybdenum layer in the one side of glass substrate, deformation quantity is too
Greatly, sample is unqualified；And after molybdenum layer is coated with glass substrate two-sided, institute under different batches
The deformation quantity for obtaining sample is very small, and fluctuates also very little, and it is controllable to illustrate deformation quantity.
As can be seen from the above results, high temperature is coated with suction on the back electrode of solar cell that the present invention is provided
Receive after layer, the fluctuating range of deformation quantity and deformation quantity significantly decreases, it can be seen that, this hair
The back electrode of solar cell of bright offer can be effectively offset under subsequent high temperature processes because of glass modulus
Decline and Bending Deformation caused by film residual stress, raising tolerable temperature, so as to reduce because of shape
Film separation or ftractureed caused by change to obtain the more preferable solar cell of performance, and can be significantly
Improve the yield rate in industrialization large-scale production.In addition, the back electrode of solar cell that the present invention is provided
With relatively low square resistance, as a rule, in the case of other conditions identical, solar battery back
The square resistance of electrode is lower, and the electricity conversion of corresponding solar cell is higher, it can be said that
The solar cell that the bright present invention is provided has higher electricity conversion.
The preferred embodiment of the present invention described in detail above, still, the present invention are not limited to above-mentioned reality
The detail in mode is applied, can be to technical side of the invention in the range of the technology design of the present invention
Case carries out a variety of simple variants, and these simple variants belong to protection scope of the present invention.
It is further to note that each particular technique described in above-mentioned embodiment is special
Levy, in the case of reconcilable, can be combined by any suitable means, in order to avoid need not
The repetition wanted, the present invention no longer separately illustrates to various possible combinations.
In addition, various embodiments of the present invention can be combined randomly, as long as its
Without prejudice to the thought of the present invention, it should equally be considered as content disclosed in this invention.
Claims (16)
1. a kind of back electrode of solar cell, the back electrode of solar cell includes glass substrate and attachment
Hearth electrode on the non-tin face of the glass substrate, it is characterised in that the back electrode of solar cell is also wrapped
Include the supporting layer being attached on the glass substrate tin face.
2. back electrode of solar cell according to claim 1, wherein, the supporting layer is selected from
At least one of molybdenum layer, layers of chrome, layer gold, nickel dam, platinum layer, silver layer, layers of copper and silicon oxide layer, it is excellent
At least one of the choosing selected from molybdenum layer, layers of chrome and silicon oxide layer, it is highly preferred that the supporting layer and hearth electrode
It is made from identical material.
3. back electrode of solar cell according to claim 1 or 2, wherein, the supporting layer
Thickness with hearth electrode is identical or different, and is each independently 400-1500nm；Preferably, it is described
Supporting layer is identical with the thickness of hearth electrode.
4. back electrode of solar cell according to claim 1 or 2, wherein, the hearth electrode
For at least one of molybdenum layer, layers of chrome, layer gold, nickel dam, platinum layer, silver layer and layers of copper；Preferably, institute
The thickness for stating glass substrate is 10-35mm；Preferably, the glass substrate is soda-lime glass plate, boric acid
At least one of salt glass plate and phosphate glass plate.
5. a kind of preparation method of back electrode of solar cell, this method is included in the non-tin of glass substrate
Hearth electrode is formed on face, it is characterised in that this method is additionally included on the tin face of the glass substrate and formed
Supporting layer.
6. method according to claim 5, wherein, the supporting layer be selected from molybdenum layer, layers of chrome,
At least one of layer gold, nickel dam, platinum layer, silver layer, layers of copper and silicon oxide layer, be preferably selected from molybdenum layer,
At least one of layers of chrome and silicon oxide layer, it is highly preferred that the supporting layer and hearth electrode select identical material
Material is made.
7. the method according to claim 5 or 6, wherein, the thickness of the supporting layer and hearth electrode
Degree is identical or different, and is each independently 400-1500nm；Preferably, the supporting layer and bottom electricity
The thickness of pole is identical.
8. the method according to claim 5 or 6, wherein, when the supporting layer is molybdenum layer,
The method of the supporting layer is formed for direct current magnetron sputtering process, and the direct current magnetron sputtering process includes：
Using metal molybdenum as target under vacuum condition, the glass substrate is heated, argon gas is passed through and high first
The first magnetically controlled DC sputtering processing is carried out under the conditions of pressure, the first hyperbar layer is obtained, then in lower pressure
The second magnetically controlled DC sputtering processing of lower progress, obtains low pressure layer, then enters again under the second condition of high voltage
The processing of the magnetically controlled DC sputtering of row the 3rd, obtains the second hyperbar layer, first condition of high voltage and second high
The pressure of press strip part is each independently 0.7-1Pa, and the pressure of the lower pressure is 0.1-0.5Pa；
Preferably, the time of the first magnetically controlled DC sputtering processing is 400-600s, second direct current
The time of magnetron sputtering processing is 3000-4000s, and the time of the 3rd magnetically controlled DC sputtering processing is
20-150s。
9. method according to claim 8, wherein, the bar that the glass substrate is heated
Part includes：Heating-up temperature is 80-200 DEG C.
10. the method according to claim 5 or 6, wherein, the hearth electrode be molybdenum layer, layers of chrome,
At least one of layer gold, nickel dam, platinum layer, silver layer and layers of copper；Preferably, the thickness of the glass substrate
Spend for 10-35mm；Preferably, the glass substrate is soda-lime glass plate, borate glass plate and phosphoric acid
At least one of salt glass plate.
11. the method according to claim 5 or 6, wherein, preparing the solar battery back
During electrode, the supporting layer is initially formed, the hearth electrode is re-formed.
12. a kind of solar cell, the solar cell is including back electrode of solar cell and successively
Be layered in absorbed layer on the hearth electrode of the back electrode of solar cell, cadmium sulfide layer, zinc oxide film,
Zinc aluminium oxide layer and preceding electrode, it is characterised in that the back electrode of solar cell is claim 1-4
Back electrode of solar cell described in middle any one.
13. a kind of preparation method of solar cell, this method is included in the bottom of back electrode of solar cell
Absorbed layer, cadmium sulfide layer, zinc oxide film, zinc aluminium oxide layer and preceding electrode are sequentially formed on electrode, it is special
Levy and be, the back electrode of solar cell is according to the method shape described in any one in claim 5-11
Into.
14. method according to claim 13, wherein, the method for forming the absorbed layer is true
Empty coating method, and the coating temperature of the Vacuum Coating method is 500-600 DEG C, preferably more than 550 DEG C
To 600 DEG C.
15. the method according to claim 13 or 14, wherein, this method is additionally included in form institute
Before stating after electrode, before the encapsulation solar cell, by the branch on the back electrode of solar cell
Layer is supportted to remove.
16. the solar cell prepared as the method described in any one in claim 13-15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108257852A (en) * | 2018-01-16 | 2018-07-06 | 北京工业大学 | A kind of preparation method of Ag doping absorbing layer of copper-zinc-tin-sulfur film solar cell |
| CN109768094A (en) * | 2018-12-28 | 2019-05-17 | 北京铂阳顶荣光伏科技有限公司 | A kind of multilayer back electrode, thin-film solar cells and preparation method thereof |
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| CN102683436A (en) * | 2011-03-09 | 2012-09-19 | 常州亚玛顿股份有限公司 | Conductive glass for thin film solar battery and preparation method thereof |
| CN104681662A (en) * | 2013-12-02 | 2015-06-03 | 青岛事百嘉电子科技有限公司 | Preparation method of high-reflectivity solar film |
| CN104737301A (en) * | 2012-07-19 | 2015-06-24 | 法国圣戈班玻璃厂 | Avoidance of glass bending in thermal processes |
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| JP2001281354A (en) * | 2000-03-30 | 2001-10-10 | Kawaguchiko Seimitsu Co Ltd | Solar dial for timepiece |
| CN102683436A (en) * | 2011-03-09 | 2012-09-19 | 常州亚玛顿股份有限公司 | Conductive glass for thin film solar battery and preparation method thereof |
| CN104737301A (en) * | 2012-07-19 | 2015-06-24 | 法国圣戈班玻璃厂 | Avoidance of glass bending in thermal processes |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108257852A (en) * | 2018-01-16 | 2018-07-06 | 北京工业大学 | A kind of preparation method of Ag doping absorbing layer of copper-zinc-tin-sulfur film solar cell |
| CN109768094A (en) * | 2018-12-28 | 2019-05-17 | 北京铂阳顶荣光伏科技有限公司 | A kind of multilayer back electrode, thin-film solar cells and preparation method thereof |
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Application publication date: 20171024 |