CN107293559A - RGBIR imaging sensors - Google Patents
RGBIR imaging sensors Download PDFInfo
- Publication number
- CN107293559A CN107293559A CN201610203367.2A CN201610203367A CN107293559A CN 107293559 A CN107293559 A CN 107293559A CN 201610203367 A CN201610203367 A CN 201610203367A CN 107293559 A CN107293559 A CN 107293559A
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- type substrate
- rgbir
- imaging sensors
- epitaxial layer
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- 238000003384 imaging method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000003491 array Methods 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 7
- 238000000576 coating method Methods 0.000 claims abstract description 7
- 239000000284 extract Substances 0.000 claims abstract description 3
- 238000000407 epitaxy Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
The present invention provides a kind of RGBIR imaging sensors, and it includes：N-type substrate；Epitaxial layer in N-type substrate；Some first N-type region domains are included in the epitaxial layer, as the photodiode area of imaging sensor；RGBIR colorized filter coating arrays；Light forms redundant electronic by RGBIR arrays in N-type substrate, in N-type substrate plus malleation, extracts redundant electronic and moves to surrounding pixel unit to prevent rotation stop, reduces the crosstalk between photodiode.The RGBIR imaging sensors of the present invention, P type substrate of the prior art is replaced using N-type substrate, and add malleation in N-type substrate, the redundant electronic extracted in N-type substrate moves to surrounding pixel unit to prevent rotation stop, reduce the crosstalk between photodiode, imaged color vividness is improved, improves picture quality.
Description
Technical field
The present invention relates to image processing field, more particularly to a kind of RGBIR imaging sensors.
Background technology
Existing RGBIR imaging sensors generally include P type substrate, the epitaxial layer in P type substrate, some N-type region domains are included in the epitaxial layer, as the photodiode area of imaging sensor.Due to instead of the RGB color optical filtering membrane array of Bayer pattern using RGBIR colorized filter coating arrays, the RGBIR colorized filter coating arrays include R, G, B, tetra- kinds of passages of IR, wherein, R passages allow feux rouges and infrared light to pass through, G passages allow green glow and infrared light to pass through, channel B allows blue light and infrared light to pass through, IR passages only allow infrared light to pass through, therefore R, G, the signal that IR channel receptions are arrived is individually subtracted in the signal that channel B is respectively received, it can obtain feux rouges, green glow, the signal that blue light is individually produced, so as to the noise for effectively removing infrared light influence and producing.It is longer yet with the wavelength of infrared light, P type substrate can be entered and bulk redundancy electronics is produced, these redundant electronics are easily transferred to surrounding pixel unit, cause the crosstalk between photodiode, and cause light luminance too high, and imaged color is partially white.
The content of the invention
It is an object of the invention to provide a kind of RGBIR imaging sensors, reduce the crosstalk between photodiode, improve imaged color vividness, improve picture quality.
Based on considerations above, the present invention provides a kind of RGBIR imaging sensors, and it includes：N-type substrate；Epitaxial layer in N-type substrate；Some first N-type region domains are included in the epitaxial layer, as the photodiode area of imaging sensor；RGBIR colorized filter coating arrays；Light forms redundant electronic by RGBIR arrays in N-type substrate, in N-type substrate plus malleation, extracts redundant electronic and moves to surrounding pixel unit to prevent rotation stop, reduces the crosstalk between photodiode.
Preferably, the epitaxial layer is p-type epitaxial layer.
Preferably, the epitaxial layer is N-type epitaxy layer, and p-type separation layer is additionally provided between N-type substrate and N-type epitaxy layer.
Preferably, the RGBIR imaging sensors also include：The second N-type region domain positioned at pel array peripheral region, the second N-type region domain is connected with N-type substrate, adds malleation in the second N-type region domain, suitable for extracting the redundant electronic in pixel cell.
Preferably, the second N-type region domain includes：Shallow n-type region and the deep n-type region positioned at its underpart close to surface.
The RGBIR imaging sensors of the present invention, P type substrate of the prior art is replaced using N-type substrate, and add malleation in N-type substrate, the redundant electronic extracted in N-type substrate moves to surrounding pixel unit to prevent rotation stop, reduce the crosstalk between photodiode, imaged color vividness is improved, improves picture quality.
Brief description of the drawings
The following detailed description to non-limiting example is read by referring to accompanying drawing, other features, objects and advantages of the invention will become more apparent upon.
Fig. 1 is the structural representation of one embodiment of the RGBIR imaging sensors of the present invention；
Fig. 2 is the structural representation of another embodiment of the RGBIR imaging sensors of the present invention.
In figure, through different diagrams, same or similar reference represents same or analogous device（Module）Or step.
Embodiment
To solve above-mentioned the problems of the prior art, the present invention provides a kind of RGBIR imaging sensors, P type substrate of the prior art is replaced using N-type substrate, and add malleation in N-type substrate, the redundant electronic extracted in N-type substrate moves to surrounding pixel unit to prevent rotation stop, reduce the crosstalk between photodiode, improve imaged color vividness, improve picture quality.
In the specific descriptions of following preferred embodiment, by the accompanying drawing with reference to appended by constituting a present invention part.Appended accompanying drawing, which has been illustrated by way of example, can realize specific embodiment.The embodiment of example is not intended as all embodiments of the limit according to the present invention.It is appreciated that without departing from the scope of the present invention, it is possible to use other embodiment, structural or logicality modification can also be carried out.Therefore, following specific descriptions and nonrestrictive, and the scope of the present invention is defined by the claims appended hereto.
Fig. 1 shows one embodiment of the RGBIR imaging sensors of the present invention.The RGBIR imaging sensors include：N-type substrate 101；P-type epitaxial layer 102 in N-type substrate 101；Some first N-type region domains 103 are included in the p-type epitaxial layer 102, as the photodiode area of imaging sensor；RGBIR colorized filter coating arrays 104.P type substrate of the prior art is replaced as a result of N-type substrate 101, and in N-type substrate 101 plus malleation, the redundant electronic extracted in N-type substrate 101 moves to surrounding pixel unit to prevent rotation stop, reduces the crosstalk between photodiode, imaged color vividness is improved, picture quality is improved.
Preferably, the RGBIR imaging sensors also include：The second N-type region domain 107 positioned at pel array peripheral region, in the present embodiment, the second N-type region domain 107 includes：Shallow n-type region 105 and the deep n-type region 106 positioned at its underpart close to surface, the second N-type region domain 107 is connected with N-type substrate 101, in the second N-type region domain 107 plus malleation, such as in the shallow n-type region 105 close to surface plus malleation, suitable for extracting the redundant electronic in pixel cell.
Fig. 2 shows another embodiment of the RGBIR imaging sensors of the present invention.The RGBIR imaging sensors include：N-type substrate 201；N-type epitaxy layer 202 in N-type substrate；P-type separation layer 208 is additionally provided between N-type substrate 201 and N-type epitaxy layer 202；Some first N-type region domains 203 are included in the N-type epitaxy layer, as the photodiode area of imaging sensor；RGBIR colorized filter coating arrays 204.P type substrate of the prior art is replaced as a result of N-type substrate 201, and in N-type substrate 201 plus malleation, the redundant electronic extracted in N-type substrate 201 moves to surrounding pixel unit to prevent rotation stop, reduces the crosstalk between photodiode, imaged color vividness is improved, picture quality is improved.
Preferably, the RGBIR imaging sensors also include：The second N-type region domain 207 positioned at pel array peripheral region, in the present embodiment, the second N-type region domain 207 includes：Shallow n-type region 205 and the deep n-type region 206 positioned at its underpart close to surface, the second N-type region domain 207 is connected with N-type substrate 201, in the second N-type region domain 207 plus malleation, such as in the shallow n-type region 205 close to surface plus malleation, suitable for extracting the redundant electronic in pixel cell.
The RGBIR imaging sensors of the present invention, P type substrate of the prior art is replaced using N-type substrate, and add malleation in N-type substrate, the redundant electronic extracted in N-type substrate moves to surrounding pixel unit to prevent rotation stop, reduce the crosstalk between photodiode, imaged color vividness is improved, improves picture quality.
It is obvious to a person skilled in the art that the invention is not restricted to the details of above-mentioned one exemplary embodiment, and without departing from the spirit or essential characteristics of the present invention, the present invention can be realized in other specific forms.Therefore, from the point of view of anyway, embodiment all should be regarded as exemplary, and be nonrestrictive.In addition, it will be evident that the word of " comprising " one is not excluded for other elements and step, and wording " one " is not excluded for plural number.The multiple element stated in device claim can also be realized by an element.The first, the second grade word is used for representing title, and is not offered as any specific order.
Claims (5)
1. a kind of RGBIR imaging sensors, it is characterised in that it includes：
N-type substrate；
Epitaxial layer in N-type substrate；Some first N-type region domains are included in the epitaxial layer, as the photodiode area of imaging sensor；
RGBIR colorized filter coating arrays；
Light forms redundant electronic by RGBIR arrays in N-type substrate, in N-type substrate plus malleation, extracts redundant electronic and moves to surrounding pixel unit to prevent rotation stop, reduces the crosstalk between photodiode.
2. RGBIR imaging sensors according to claim 1, it is characterised in that the epitaxial layer is p-type epitaxial layer.
3. RGBIR imaging sensors according to claim 1, it is characterised in that the epitaxial layer is N-type epitaxy layer, and p-type separation layer is additionally provided between N-type substrate and N-type epitaxy layer.
4. RGBIR imaging sensors according to claim 1, it is characterised in that also include：The second N-type region domain positioned at pel array peripheral region, the second N-type region domain is connected with N-type substrate, adds malleation in the second N-type region domain, suitable for extracting the redundant electronic in pixel cell.
5. RGBIR imaging sensors according to claim 4, it is characterised in that the second N-type region domain includes：Shallow n-type region and the deep n-type region positioned at its underpart close to surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203367.2A CN107293559A (en) | 2016-04-05 | 2016-04-05 | RGBIR imaging sensors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610203367.2A CN107293559A (en) | 2016-04-05 | 2016-04-05 | RGBIR imaging sensors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107293559A true CN107293559A (en) | 2017-10-24 |
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| CN201610203367.2A Pending CN107293559A (en) | 2016-04-05 | 2016-04-05 | RGBIR imaging sensors |
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Citations (7)
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| CN1481585A (en) * | 2000-10-19 | 2004-03-10 | ���Ӱ뵼������˾ | Method of fabricating heterojunction photodiodes integrated with CMOS |
| US20070029589A1 (en) * | 2005-08-04 | 2007-02-08 | Bahl Sandeep R | Reduced crosstalk CMOS image sensors |
| JP2009302349A (en) * | 2008-06-13 | 2009-12-24 | Sharp Corp | Amplification type solid-state imaging element, and electronic information apparatus |
| CN101814518A (en) * | 2009-02-23 | 2010-08-25 | 索尼公司 | Solid-state imaging element and driving method thereof |
| CN101872775A (en) * | 2009-04-24 | 2010-10-27 | 美商豪威科技股份有限公司 | Be used to reduce the multilayer image sensor pixel structure of crosstalking |
| CN104134677A (en) * | 2014-08-15 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Imaging sensor preventing image dispersion and manufacturing method of imaging sensor |
| CN205621735U (en) * | 2016-04-05 | 2016-10-05 | 格科微电子（上海）有限公司 | Rgbir image sensor |
-
2016
- 2016-04-05 CN CN201610203367.2A patent/CN107293559A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1481585A (en) * | 2000-10-19 | 2004-03-10 | ���Ӱ뵼������˾ | Method of fabricating heterojunction photodiodes integrated with CMOS |
| US20070029589A1 (en) * | 2005-08-04 | 2007-02-08 | Bahl Sandeep R | Reduced crosstalk CMOS image sensors |
| JP2009302349A (en) * | 2008-06-13 | 2009-12-24 | Sharp Corp | Amplification type solid-state imaging element, and electronic information apparatus |
| CN101814518A (en) * | 2009-02-23 | 2010-08-25 | 索尼公司 | Solid-state imaging element and driving method thereof |
| CN101872775A (en) * | 2009-04-24 | 2010-10-27 | 美商豪威科技股份有限公司 | Be used to reduce the multilayer image sensor pixel structure of crosstalking |
| CN104134677A (en) * | 2014-08-15 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | Imaging sensor preventing image dispersion and manufacturing method of imaging sensor |
| CN205621735U (en) * | 2016-04-05 | 2016-10-05 | 格科微电子（上海）有限公司 | Rgbir image sensor |
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