CN107290826B - A kind of Two dimensional square lattice photon crystal structure with big TM forbidden band based on windmill-shaped defect - Google Patents
A kind of Two dimensional square lattice photon crystal structure with big TM forbidden band based on windmill-shaped defect Download PDFInfo
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- CN107290826B CN107290826B CN201710616456.4A CN201710616456A CN107290826B CN 107290826 B CN107290826 B CN 107290826B CN 201710616456 A CN201710616456 A CN 201710616456A CN 107290826 B CN107290826 B CN 107290826B
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- G—PHYSICS
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- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1225—Basic optical elements, e.g. light-guiding paths comprising photonic band-gap structures or photonic lattices
Abstract
The invention discloses a kind of Two dimensional square lattice photon crystal structure with big TM forbidden band based on windmill-shaped defect, the background media of dielectric posts and low-refraction including high refractive index;Photon crystal structure is arranged in tetragonal photonic crystal by tetragonal by high refractive index medium column;The lattice constant of tetragonal photonic crystal is a;High refractive index medium column radius r is 0.24a~0.3a;The defect sturcture of tetragonal photonic crystal is a windmill-shaped defect sturcture;The side length L of tetragonal photonic crystal defect structure is 6a;Each fan wing is 2 (a-r) from defect sturcture parallel edge distance W;The fan wing of windmill-shaped defect sturcture to the distance S of windmill center vertical translation be 0~1a.The present invention has very big TM forbidden band relative to simple defect sturcture, when high refractive index medium is silicon, low-refraction background media is air, r=0.27a, L=6a, S=0.66a, forbidden bandwidth is 0.05057, band gap ratio reaches 19.12%, and forbidden bandwidth increases 82.43%, can be widely applied in optic communication device.
Description
Technical field
The invention belongs to Communication Studies fields, and in particular to a kind of raising Two dimensional square lattice photonic crystal TM forbidden bandwidth
Method.
Background technique
Yablonovitch in 1987 is discussing how to inhibit spontaneous radiation and John respectively only when discussing photon local
On the spot propose the concept of photonic crystal.Photonic crystal (Photonic crystal, PC) is by different dielectric material in space
By dielectric structure made of certain periodic arrangement, there is photonic band gap and forbidden photon band, the propagation of light can be controlled
And adjusting, referred to as " semiconductor of light ".Its appearance makes it possible that people manipulate and control the dream of photon.
The most important characteristic of photonic crystal is forbidden photon band (PBG).2 D photon crystal usually has TE mould and TM mould, TE
Mould and TM mould can generate TE forbidden band and TM forbidden band respectively.Big PBG can largely improve photon crystal device performance.Due to light
The band gap of sub- crystal is wider, and the application performance in optic communication device is better.And the symmetry of photon crystal structure is to control
Forbidden photon band processed is most important, so some defect cavities are arranged in perfect photonic crystal, destroys the symmetry of original lattice,
The structural parameters that can more control forbidden band characteristic are introduced, forbidden bandwidth not only can be controlledly increased, it can also be in more waves
Section generates PBG simultaneously, extends the use scope of single device.
Summary of the invention
The purpose of the present invention is provide a kind of raising Two dimensional square lattice photonic crystal TM forbidden bandwidth regarding to the issue above
Method, the Two dimensional square lattice photon crystal structure with big TM forbidden band, and easily prepared optic communication device are provided.
The technical scheme is that a kind of Two dimensional square lattice light with big TM forbidden band based on windmill-shaped defect
Sub- crystal structure, including high refractive index medium column and low-refraction background media;
The photon crystal structure is arranged in tetragonal photonic crystal by tetragonal by high refractive index medium column;It is described
The lattice constant of tetragonal photonic crystal is a;The high refractive index medium column radius r is 0.24a~0.3a;
A windmill-shaped defect sturcture is removed in the tetragonal photonic crystal;The tetragonal photonic crystal lacks
Sunken structure includes four fan wings in windmill-shape arrangement, and each fan wing includes two high refractive index medium columns side by side, adjacent
Fan wing is orthogonal, and two fan wings on diagonal line are parallel to each other;The side length L of the tetragonal photonic crystal defect structure is
6a;Each fan wing is 2 (a-r) from defect sturcture parallel edge distance W;The fan wing of the windmill-shaped defect sturcture to
The distance S of windmill center vertical translation is 0~1a.
In above scheme, the high refractive index medium is any one in silicon, germanium or GaAs.
Further, the high refractive index medium is silicon, dielectric constant 12.096.
In above scheme, the low-refraction background media is air, dielectric constant 1.
In above scheme, the lattice constant of the tetragonal photonic crystal is a=1 μm.
In above scheme, the high refractive index medium is silicon, and the low-refraction background media is air, the regular crystal
The side length L=6a of lattice photonic crystal defect structure, fan distance S=0~1a of the wing to windmill center vertical translation of the windmill,
The band gap ratio of the tetragonal photonic crystal is greater than 14.20%, and forbidden bandwidth, which increases, is greater than 31.96%.
Further, the high refractive index medium is silicon, and low-refraction background media is air, r=0.27a, L=6a, S
=0.66a, band gap ratio 19.12%, forbidden bandwidth increase by 82.43%.
Compared with prior art, the beneficial effects of the present invention are:
1. the present invention is based on the Two dimensional square lattice photon crystal structures with big TM forbidden band of windmill-shaped defect just
The band gap ratio of prismatic crystal lattice photonic crystal is greater than 14.20%, and forbidden bandwidth, which increases, is greater than 31.96%;And when the high refractive index is situated between
Matter is silicon, and low-refraction background media is air, and r=0.27a, L=6a, S=0.66a, band gap ratio 19.12%, forbidden band is wide
Degree increases by 82.43%, illustrates there is very big TM forbidden band.
2. the present invention is based on the Two dimensional square lattice photon crystal structures with big TM forbidden band of windmill-shaped defect to TM
The controllability of forbidden band modulation is stronger.
3. the present invention is based on the Two dimensional square lattice photon crystal structure designs with big TM forbidden band of windmill-shaped defect
Simply, it is easy to make, can be widely applied in the design of optic communication device.
Detailed description of the invention
Fig. 1 is Two dimensional square lattice photon crystal structure schematic diagram of the present invention.
Fig. 2 is a kind of photonic crystal windmill of raising Two dimensional square lattice photonic crystal TM forbidden bandwidth method of the invention
Defect cavity structural schematic diagram.
Fig. 3 is embodiment 2,4-12 using photonic crystal TM forbidden bandwidth figure corresponding to defect cavity parameter value.
Specific embodiment
Invention is further described in detail with reference to the accompanying drawings and detailed description, but protection scope of the present invention
It is not limited to this.
As shown in Figure 1, the Two dimensional square lattice photonic crystal of the invention based on windmill-shaped defect includes high refractive index
The background media of dielectric posts and low-refraction;Photon crystal structure presses tetragonal knot by round scatterer high refractive index medium column
Structure arrangement;The lattice constant a of tetragonal photonic crystal is 1 μm;The radius r of round scatterer is 0.24a~0.3a;Such as Fig. 2
Shown, the defect sturcture of tetragonal photonic crystal is a windmill-shaped defect sturcture;In the tetragonal photonic crystal
Remove a windmill-shaped defect sturcture;The tetragonal photonic crystal defect structure includes four fans in windmill-shape arrangement
Wing, each fan wing includes two high refractive index medium columns side by side, and adjacent fan wing is orthogonal, two fan wings on diagonal line
It is parallel to each other;The side length L of the tetragonal photonic crystal defect structure is 6a;Each fan wing is from defect sturcture parallel edges
The distance W of edge is 2 (a-r);The fan wing of the windmill-shaped defect sturcture to the distance S of windmill center vertical translation be 0~1a.
The high refractive index medium is silicon;Low-refraction background media is air.
Embodiment 1:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.24a, L=6a, S=0.Have
Big TM forbidden band, maximum width 0.02541.
Embodiment 2:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.Have
Big TM forbidden band, maximum width 0.02772, as shown in Figure 3.
Embodiment 3:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.3a, L=6a, S=0.With big
TM forbidden band, forbidden bandwidth 0.02699.
Embodiment 4:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.1a.Tool
There is big TM forbidden band, forbidden bandwidth 0.03658, band gap ratio reaches 14.20%, and relative to embodiment 2, TM forbidden band increases
31.96%, as shown in Figure 3.
Embodiment 5:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.3a.Tool
There is big TM forbidden band, forbidden bandwidth 0.04223, band gap ratio reaches 16.21%, and relative to embodiment 2, TM forbidden band increases
52.34%, as shown in Figure 3.
Embodiment 6:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.5a.Tool
There is big TM forbidden band, forbidden bandwidth 0.04756, band gap ratio reaches 18.09%, and relative to embodiment 2, TM forbidden band increases
71.57%, as shown in Figure 3.
Embodiment 7:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.6a.Tool
There is big TM forbidden band, forbidden bandwidth 0.04947, band gap ratio reaches 18.74%, and relative to embodiment 2, TM forbidden band increases
78.46%, as shown in Figure 3.
Embodiment 8:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.65a.
With big TM forbidden band, forbidden bandwidth 0.05056, band gap ratio reaches 19.11%, and relative to embodiment 2, TM forbidden band increases
82.39%, as shown in Figure 3.
Embodiment 9:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.66a.
With big TM forbidden band, forbidden bandwidth 0.05057, band gap ratio reaches 19.12%, and relative to embodiment 2, TM forbidden band increases
82.43%, as shown in Figure 3.
Embodiment 10:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.67a.
With big TM forbidden band, forbidden bandwidth 0.05048, band gap ratio reaches 19.08%, and relative to embodiment 2, TM forbidden band increases
82.10%, as shown in Figure 3.
Embodiment 11:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.7a.Tool
There is big TM forbidden band, forbidden bandwidth 0.04971, band gap ratio reaches 18.83%, and relative to embodiment 2, TM forbidden band increases
79.32%, as shown in Figure 3.
Embodiment 12:
High refractive index medium uses silicon, and low-refraction background media uses air, r=0.27a, L=6a, S=0.9a.Tool
There is big TM forbidden band, forbidden bandwidth 0.0425, band gap ratio reaches 16.32%, and relative to embodiment 2, TM forbidden band increases
53.31%, as shown in Figure 3.
It can be seen that the present invention is based on the two-dimension squares with big TM forbidden band of windmill-shaped defect from above-described embodiment
The band gap ratio of the tetragonal photonic crystal of lattice photon crystal structure is greater than 14.20%, and forbidden bandwidth growth is greater than
31.96%;And when the high refractive index medium is silicon, low-refraction background media is air, r=0.27a, L=6a, S=
0.66a, band gap ratio 19.12%, forbidden bandwidth increase by 82.43%, illustrate there is very big TM forbidden band.The present invention prohibits TM
Controllability with modulation is stronger, and structure design is simple, is easy to make, can be widely applied in the design of optic communication device.
Although not each embodiment only includes one it should be appreciated that this specification describes according to various embodiments
A independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should will say
As a whole, the technical solutions in the various embodiments may also be suitably combined for bright book, and forming those skilled in the art can be with
The other embodiments of understanding.
The series of detailed descriptions listed above are illustrated only for possible embodiments of the invention,
The protection scope that they are not intended to limit the invention, it is all without departing from equivalent embodiment made by technical spirit of the present invention or change
It should all be included in the protection scope of the present invention.
Claims (7)
1. a kind of Two dimensional square lattice photon crystal structure with big TM forbidden band based on windmill-shaped defect, feature exist
In, including high refractive index medium column and low-refraction background media;
The photon crystal structure is arranged in tetragonal photonic crystal by tetragonal by high refractive index medium column;The pros
The lattice constant of lattice photonic crystal is a;The high refractive index medium column radius r is 0.24a ~ 0.3a;
Removal part high refractive index medium column forms a windmill-shaped defect sturcture in the tetragonal photonic crystal;It is described
Tetragonal photonic crystal defect structure includes four fan wings in windmill-shape arrangement, and each fan wing includes two high foldings side by side
Rate dielectric posts are penetrated, adjacent fan wing is orthogonal, and two fan wings on diagonal line are parallel to each other;The tetragonal photonic crystal
The side length L of defect sturcture is 6a;Dielectric posts distance W of each fan wing from defect sturcture parallel edge is 2(a-r);Institute
State the fan wing of windmill-shaped defect sturcture to the distance S of windmill center vertical translation be 0 ~ 1a.
2. the Two dimensional square lattice photonic crystal knot with big TM forbidden band based on windmill-shaped defect according to claim 1
Structure, which is characterized in that the high refractive index medium is any one in silicon, germanium or GaAs.
3. the Two dimensional square lattice photonic crystal knot with big TM forbidden band based on windmill-shaped defect according to claim 2
Structure, which is characterized in that the high refractive index medium is silicon, dielectric constant 12.096.
4. the Two dimensional square lattice photonic crystal knot with big TM forbidden band based on windmill-shaped defect according to claim 3
Structure, which is characterized in that the low-refraction background media is air, dielectric constant 1.
5. brilliant to the two-dimension square with big TM forbidden band described in 4 any one based on windmill-shaped defect according to claim 1
Lattice photon crystal structure, which is characterized in that the lattice constant of the tetragonal photonic crystal is a=1 μm.
6. the Two dimensional square lattice photonic crystal knot with big TM forbidden band based on windmill-shaped defect according to claim 5
Structure, which is characterized in that the high refractive index medium is silicon, and the low-refraction background media is air, the tetragonal light
Side length L=6a of sub- crystal defect structure, distance S=0 ~ 1a of the fan wing to windmill center vertical translation of the windmill, it is described just
The band gap ratio of prismatic crystal lattice photonic crystal is greater than 14.20%, and forbidden bandwidth, which increases, is greater than 31.96%.
7. the Two dimensional square lattice photonic crystal knot with big TM forbidden band based on windmill-shaped defect according to claim 6
Structure, which is characterized in that the high refractive index medium be silicon, low-refraction background media be air, r=0.27a, L=6a, S=
0.66a, band gap ratio 19.12%, forbidden bandwidth increase by 82.43%.
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CN103869386A (en) * | 2014-02-27 | 2014-06-18 | 西北工业大学 | Device for generating vector light beams by utilizing multi-flaw photonic crystal microcavity |
CN106597578A (en) * | 2016-12-27 | 2017-04-26 | 南开大学 | Crescent windmill superstructure surface |
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US6879432B1 (en) * | 2004-02-17 | 2005-04-12 | National Central University | Beamsplitter utilizing a periodic dielectric structure |
CN103869386A (en) * | 2014-02-27 | 2014-06-18 | 西北工业大学 | Device for generating vector light beams by utilizing multi-flaw photonic crystal microcavity |
CN106597578A (en) * | 2016-12-27 | 2017-04-26 | 南开大学 | Crescent windmill superstructure surface |
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Effective date of registration: 20230919 Address after: No. 168, Youyou Road, Xiangzhou District, Zhuhai City, Guangdong Province, 519000 Patentee after: Xin Yao Tu Technology (Zhuhai) Co.,Ltd. Address before: Zhenjiang City, Jiangsu Province, 212013 Jingkou District Road No. 301 Patentee before: JIANGSU University |