CN107287564B - A method of increasing SYCO-314 membrane laser induced potential - Google Patents

A method of increasing SYCO-314 membrane laser induced potential Download PDF

Info

Publication number
CN107287564B
CN107287564B CN201710421107.7A CN201710421107A CN107287564B CN 107287564 B CN107287564 B CN 107287564B CN 201710421107 A CN201710421107 A CN 201710421107A CN 107287564 B CN107287564 B CN 107287564B
Authority
CN
China
Prior art keywords
yco
laser
induced potential
film
syco
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201710421107.7A
Other languages
Chinese (zh)
Other versions
CN107287564A (en
Inventor
虞澜
胡建力
宋世金
刘安安
黄杰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunming University of Science and Technology
Original Assignee
Kunming University of Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kunming University of Science and Technology filed Critical Kunming University of Science and Technology
Priority to CN201710421107.7A priority Critical patent/CN107287564B/en
Publication of CN107287564A publication Critical patent/CN107287564A/en
Application granted granted Critical
Publication of CN107287564B publication Critical patent/CN107287564B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Insulating Materials (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)

Abstract

The present invention discloses a kind of method for increasing SYCO-314 membrane laser induced potential, belongs to film material with function field, in Sr3YCo4O10.5+δCa is mixed in target and Sr is used by pulse laser deposition3‑xCaxYCo4O10.5+δPolycrystal target prepares Sr in the inclined single crystalline substrate of c-axis3‑xCaxYCo4O10.5+δEpitaxial film, to obtain the film for increasing laser induced thermoelectric voltage；The method can significantly improve Sr3YCo4O10.5+δMembrane laser induced potential, and it is reproducible, be easily achieved.

Description

A method of increasing SYCO-314 membrane laser induced potential
Technical field
The present invention relates to a kind of methods for increasing SYCO-314 membrane laser induced potential, belong to film material with function neck Domain.
Background technique
Laser induced thermoelectric voltage (Laser Induced Voltage, LIV) signal be from material Seebeck tensor it is each to Temperature-difference thermoelectric effect caused by the opposite sex.I.e. when laser irradiation film surface, the temperature ladder along film thickness direction will be generated Degree, in the lateral thermoelectric voltage signal that film surface obtains.LIV signal is not only related with the anisotropy of crystal, and in film Tilt angle it is related.LIV effect can be applied to laser acquisition and analysis, temperature measurement, hot-fluid bulk measurement etc..
SYCO-314, that is, layer structure Sr of layer structure3YCo4O10.5+δDue to physical under its high temperature, oxidation environment The advantages that energy is stablized, and preparation cost is low, non-toxic, receives significant attention, crystal structure is by CoO6Octahedral layer and oxygen lack Position CoO4+δTetrahedral layer is alternately arranged along c-axis, shows the A orderly i.e. faces ab and c-axis direction Sr2+And Y3+By-Sr-Y-Y- Sr- ordered arrangement and Lacking oxygen ordered arrangement, and the face ab and c-axis direction form biggish anisotropy, still Sr3YCo4O10.5+δMembrane laser induced potential is not high enough, is not able to satisfy sometimes and uses needs.
Summary of the invention
The present invention provides a kind of methods for increasing SYCO-314 membrane laser induced potential, in Sr3YCo4O10.5+δTarget Middle incorporation Ca is simultaneously prepared into film, specifically includes the following steps:
(1) preparation of Ca polycrystal target is mixed: according to Sr3-xCaxYCo4O10.5+δStoichiometric ratio weighs raw material SrCO3、 CaCO3、Y2O3、Co3O4, i.e., Sr:Ca:Y:Co=(3-x): x:1:4 in raw material, wherein x=(0.05~0.1), after being ground Compression moulding, carries out double sintering, and cooling obtains mixing Ca polycrystal target Sr3-xCaxYCo4O10.5+δ；
(2) it mixes the preparation of Ca bevelled film: being inclined with the polycrystal target that step (1) obtains in c-axis by pulse laser deposition Sr is prepared in oblique single crystalline substrate3-xCaxYCo4O10.5+δEpitaxial film.
Step (1) the double sintering technique: once sintered concrete technology: with 5 DEG C/min~10 DEG C/min heating speed Rate is warming up to 950 DEG C~1180 DEG C sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 5 DEG C/ Min~10 DEG C/min heating rate is warming up to 950 DEG C~1180 DEG C sintering 540min.
The inclined single crystalline substrate of step (2) c-axis is LaAlO3(100) substrate.
The inclined tilt angle of step (2) c-axis is 5 °~15 °.
The process conditions of step (2) the pulse laser deposition are KrF excimer laser wavelength 248nm, laser pulse width 28ns, laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa-1×10-3Pa, 760 DEG C of growth temperature, growth It flows oxygen and presses 100Pa, growth time 20min, 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, annealing time 20min.
Mix Sr after Ca3YCo4O10.5+δPolycrystal target can make film more equal on c-axis bevelled film when preparing film Even growth, film quality are more preferable；Mix Sr after Ca3YCo4O10.5+δThe anisotropy of film immanent structure increases, under collective effect Improve Sr3YCo4O10.5+δThe laser induced thermoelectric voltage of film.
The beneficial effects of the invention are as follows preparing, thin-film technique is simple, easily operated, is produced on a large scale, nothing in preparation process Harmful substance generates, and low energy consumption is economic and environment-friendly；The incorporation of Ca increases Sr3YCo4O10.5+δThe laser induced thermoelectric voltage of film, The controllable of membrane laser induced potential is realized, manufacture application of the film for light (heat) electric explorer etc. is conducive to；Pass through Ca doping improves membrane laser induced potential, is conducive to the Sr that analyzes and researches3YCo4O10.5+δThe anisotropy of the inside configuration of film, Also a kind of new thinking is provided to study the intrinsic architectural characteristic of other thin-film materials.
Detailed description of the invention
Fig. 1 is the Sr for 5 ° of c-axis extensions that 1-3 of the embodiment of the present invention is prepared3-xCaxYCo4O10.5+δ(x=0,0.05, 0.1) induced potential-time diagram of the film under 200 mJ laser energies；
Fig. 2 is the Sr for 15 ° of c-axis extensions that 7-9 of the embodiment of the present invention is prepared3-xCaxYCo4O10.5+δ(x=0,0.05, 0.1) induced potential-time diagram of the film under 200 mJ laser energies.
Specific embodiment
Invention is further described in detail combined with specific embodiments below, but protection scope of the present invention is not limited to The content.
Embodiment 1
The present embodiment Sr3YCo4O10.5+δThe preparation of film specifically includes the following steps:
(1) Sr3YCo4O10.5+δThe preparation of polycrystal target: raw material is weighed according to chemical formula ratio Sr:Y:Co=3:1:4 SrCO3, Y2O3, Co3O4, it is ground rear compression moulding, carries out once sintered: being warming up to 1180 with the heating rate of 5 DEG C/min DEG C sintering 900min, is re-grind compression moulding after cooling, then carry out double sintering: being warming up to 5 DEG C/min heating rate 540min is sintered at 1180 DEG C, cooling obtains polycrystal target Sr3YCo4O10.5+δ；
(2) Sr3YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, laser pulse width The KrF excimer laser source of 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa, growth temperature 760 DEG C, growth flowing oxygen presses 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, when annealing Between 20min be growth technique, the Sr obtained with step (1)3YCo4O10.5+δC-axis inclined LaAlO of the polycrystal target at 5 °3 (100) Sr is prepared in single crystalline substrate3YCo4O10.5+δEpitaxial film.
Induced potential-time diagram of 5 ° of bevelled films under 200 mJ laser energies, as shown in Figure 1,5 ° of bevelled films exist Induced potential U ≈ 24mV under 200 mJ laser energies.
Embodiment 2
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.95Ca0.05YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.95: 0.05:1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, be ground rear compression moulding, carry out once sintered: with 5 DEG C/ Min heating rate is warming up to 1180 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 5 DEG C/min heating rate is warming up at 1180 DEG C and is sintered 540min, cooling obtains mixing Ca polycrystal target Sr2.95Ca0.05YCo4O10.5+δ；
(2) Sr2.95Ca0.05YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, The KrF excimer laser source of laser pulse width 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa is raw 760 DEG C of long temperature, growth flowing oxygen press 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, Annealing time 20min is growth technique, the Sr obtained with step (1)3YCo4O10.5+δPolycrystal target is inclined in 5 ° of c-axis LaAlO3(100) Sr is prepared in single crystalline substrate2.95Ca0.05YCo4O10.5+δEpitaxial film.
Induced potential-time diagram of 5 ° of bevelled films under 200 mJ laser energies, as shown in Figure 1,5 ° of bevelled films exist Induced potential U ≈ 53.6mV under 200 mJ laser energies.
Embodiment 3
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.90Ca0.1YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.90:0.1: 1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, it is ground rear compression moulding, is carried out once sintered: with 5 DEG C/min heating Rate is warming up to 1180 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 5 DEG C/min liter Warm rate, which is warming up at 1180 DEG C, is sintered 540min, and cooling obtains mixing Ca polycrystal target Sr2.90Ca0.1YCo4O10.5+δ；
(2) Sr2.90Ca0.1YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, swash The KrF excimer laser source of light pulsewidth 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa, growth 760 DEG C of temperature, growth flowing oxygen presses 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa is moved back Fiery time 20min is growth technique, the Sr obtained with step (1)2.90Ca0.1YCo4O10.5+δPolycrystal target is inclined in 5 ° of c-axis LaAlO3(100) Sr is prepared in single crystalline substrate2.90Ca0.1YCo4O10.5+δEpitaxial film.
Induced potential-time diagram of 5 ° of bevelled films under 200 mJ laser energies, as shown in Figure 1,5 ° of bevelled films exist Induced potential U ≈ 230mV under 200 mJ laser energies.
Embodiment 4
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.93Ca0.07YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.93: 0.07:1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, be ground rear compression moulding, carry out once sintered: with 10 DEG C/ Min heating rate is warming up to 950 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 10 DEG C/min heating rate is warming up at 950 DEG C and is sintered 540min, cooling obtains mixing Ca polycrystal target Sr2.93Ca0.07YCo4O10.5+δ；
(2) Sr2.93Ca0.07YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, The KrF excimer laser source of laser pulse width 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-3Pa is raw 760 DEG C of long temperature, growth flowing oxygen press 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, Annealing time 20min is growth technique, the Sr obtained with step (1)2.93Ca0.07YCo4O10.5+δPolycrystal target inclines in 8 ° of c-axis Oblique LaAlO3(100) Sr is prepared in single crystalline substrate2.93Ca0.07YCo4O10.5+δEpitaxial film.
Embodiment 5
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.94Ca0.06YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.94: 0.06:1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, be ground rear compression moulding, carry out once sintered: with 8 DEG C/ Min heating rate is warming up to 1100 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 8 DEG C/min heating rate is warming up at 1100 DEG C and is sintered 540min, cooling obtains mixing Ca polycrystal target Sr2.94Ca0.06YCo4O10.5+δ；
(2) Sr2.95Ca0.05YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, The KrF excimer laser source of laser pulse width 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 5 × 10-4Pa is raw 760 DEG C of long temperature, growth flowing oxygen press 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, Annealing time 20min is growth technique, the Sr obtained with step (1)2.94Ca0.06YCo4O10.5+δPolycrystal target inclines in 5 ° of c-axis Oblique LaAlO3(100) Sr is prepared in single crystalline substrate2.94Ca0.06YCo4O10.5+δEpitaxial film.
Embodiment 6
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.92Ca0.08YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.92: 0.08:1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, be ground rear compression moulding, carry out once sintered: with 6 DEG C/ Min heating rate is warming up to 1150 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 6 DEG C/min heating rate is warming up at 1150 DEG C and is sintered 540min, cooling obtains mixing Ca polycrystal target Sr2.92Ca0.08YCo4O10.5+δ；
(2) Sr2.92Ca0.08YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, The KrF excimer laser source of laser pulse width 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-3Pa is raw 760 DEG C of long temperature, growth flowing oxygen press 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, Annealing time 20min is growth technique, the Sr obtained with step (1)2.92Ca0.08YCo4O10.5+δPolycrystal target inclines in 10 ° of c-axis Oblique LaAlO3(100) Sr is prepared in single crystalline substrate2.92Ca0.08YCo4O10.5+δEpitaxial film.
Embodiment 7
The present embodiment Sr3YCo4O10.5+δThe preparation of film specifically includes the following steps:
(1) Sr3YCo4O10.5+δThe preparation of polycrystal target: raw material is weighed according to chemical formula ratio Sr:Y:Co=3:1:4 SrCO3, Y2O3, Co3O4, it is ground rear compression moulding, carries out once sintered: 950 DEG C of burnings is warming up to 5 DEG C/min heating rate 900min is tied, compression moulding is re-grind after cooling, then carry out double sintering: being warming up at 950 DEG C with 5 DEG C/min heating rate It is sintered 540min, cooling obtains polycrystal target Sr3YCo4O10.5+δ；
(2) Sr3YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, laser pulse width The KrF excimer laser source of 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa, growth temperature 760 DEG C, growth flowing oxygen presses 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, when annealing Between 20min be growth technique, the Sr obtained with step (1)3YCo4O10.5+δC-axis inclined LaAlO of the polycrystal target at 15 °3 (100) Sr is prepared in single crystalline substrate3YCo4O10.5+δEpitaxial film.
Induced potential-time diagram of 15 ° of bevelled films under 200 mJ laser energies, as shown in Fig. 2, 15 ° of bevelled films Induced potential U ≈ 5.8mV under 200 mJ laser energies.
Embodiment 8
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.95Ca0.05YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.95: 0.05:1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, be ground rear compression moulding, carry out once sintered: with 5 DEG C/ Min heating rate is warming up to 950 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 5 DEG C/ Min heating rate, which is warming up at 950 DEG C, is sintered 540min, and cooling obtains mixing Ca polycrystal target Sr2.95Ca0.05YCo4O10.5+δ；
(2) Sr2.95Ca0.05YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, The KrF excimer laser source of laser pulse width 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa is raw 760 DEG C of long temperature, growth flowing oxygen press 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa, Annealing time 20min is growth technique, the Sr obtained with step (1)2.95Ca0.05YCo4O10.5+δPolycrystal target inclines in 15 ° of c-axis Oblique LaAlO3(100) Sr is prepared in single crystalline substrate2.95Ca0.05YCo4O10.5+δEpitaxial film.
Induced potential-time diagram of 15 ° of bevelled films under 200 mJ laser energies, as shown in Fig. 2, 15 ° of bevelled films 144 mV of induced potential U ≈ under 200 mJ laser energies.
Embodiment 9
The present embodiment increases Sr3YCo4O10.5+δThe method of membrane laser induced potential, in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) Sr2.90Ca0.1YCo4O10.5+δThe preparation of polycrystal target: according to chemical formula ratio Sr:Ca:Y:Co=2.90:0.1: 1:4 weighs raw material SrCO3, CaCO3, Y2O3, Co3O4, it is ground rear compression moulding, is carried out once sintered: with 5 DEG C/min heating Rate is warming up to 950 DEG C of sintering 900min, re-grinds compression moulding after cooling, then carry out double sintering: with 5 DEG C/min heating Rate, which is warming up at 950 DEG C, is sintered 540min, and cooling obtains mixing Ca polycrystal target Sr2.90Ca0.1YCo4O10.5+δ；
(2) Sr2.90Ca0.1YCo4O10.5+δThe preparation of bevelled film: by pulsed laser deposition technique with wavelength 248nm, swash The KrF excimer laser source of light pulsewidth 28ns, with laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa, growth 760 DEG C of temperature, growth flowing oxygen presses 100Pa, growth time 20min, and 760 DEG C of in-situ annealing temperature, static oxygen presses 104Pa is moved back Fiery time 20min is growth technique, the Sr obtained with step (1)2.90Ca0.1YCo4O10.5+δPolycrystal target is tilted in 15 ° of c-axis LaAlO3(100) Sr is prepared in single crystalline substrate2.90Ca0.1YCo4O10.5+δEpitaxial film.
Induced potential-time diagram of 15 ° of bevelled films under 200 mJ laser energies, as shown in Fig. 2, 15 ° of bevelled films Induced potential U ≈ 208mV under 200 mJ laser energies.

Claims (5)

1. a kind of method for increasing SYCO-314 membrane laser induced potential, which is characterized in that in Sr3YCo4O10.5+δIt is mixed in target Enter Ca and is prepared into film, specifically includes the following steps:
(1) preparation of Ca polycrystal target is mixed: according to Sr3-xCaxYCo4O10.5+δStoichiometric ratio weighs raw material SrCO3、CaCO3、 Y2O3、Co3O4, i.e. Sr:Ca:Y:Co=(3-x): x:1:4, wherein x=(0.05~0.1), is ground rear compression moulding, carries out Double sintering, cooling obtain mixing Ca polycrystal target Sr3-xCaxYCo4O10.5+δ；
(2) mix the preparation of Ca bevelled film: the polycrystal target obtained by pulse laser deposition with step (1) is inclined in c-axis Sr is prepared in single crystalline substrate3-xCaxYCo4O10.5+δEpitaxial film.
2. increasing the method for SYCO-314 membrane laser induced potential according to claim 1, which is characterized in that step (1) The double sintering technique: once sintered concrete technology: with 5 DEG C/min~10 DEG C/min heating rate be warming up to 950 DEG C~ 1180 DEG C of sintering 900min re-grind compression moulding after cooling, then carry out double sintering: with 5 DEG C/min~10 DEG C/min Heating rate is warming up to 950 DEG C~1180 DEG C sintering 540min.
3. increasing the method for SYCO-314 membrane laser induced potential according to claim 1, which is characterized in that step (2) The inclined single crystalline substrate of c-axis is LaAlO3(100) substrate.
4. increasing the method for SYCO-314 membrane laser induced potential according to claim 1, which is characterized in that step (2) The inclined tilt angle of c-axis is 5 °~15 °.
5. increasing the method for SYCO-314 membrane laser induced potential according to claim 1, which is characterized in that step (2) The process conditions of the pulse laser deposition are KrF excimer laser wavelength 248nm, laser pulse width 28ns, laser energy 200mJ, laser frequency 4Hz, back end vacuum 1 × 10-4Pa-1×10-3Pa, 760 DEG C of growth temperature, growth flowing oxygen presses 100Pa, Growth time 20min, 760 DEG C of in-situ annealing temperature, static oxygen pressure 104Pa, annealing time 20min.
CN201710421107.7A 2017-06-07 2017-06-07 A method of increasing SYCO-314 membrane laser induced potential Active CN107287564B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710421107.7A CN107287564B (en) 2017-06-07 2017-06-07 A method of increasing SYCO-314 membrane laser induced potential

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710421107.7A CN107287564B (en) 2017-06-07 2017-06-07 A method of increasing SYCO-314 membrane laser induced potential

Publications (2)

Publication Number Publication Date
CN107287564A CN107287564A (en) 2017-10-24
CN107287564B true CN107287564B (en) 2019-04-12

Family

ID=60096146

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710421107.7A Active CN107287564B (en) 2017-06-07 2017-06-07 A method of increasing SYCO-314 membrane laser induced potential

Country Status (1)

Country Link
CN (1) CN107287564B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108534945B (en) * 2018-03-22 2021-01-05 昆明理工大学 Method for modulating thin film laser induced voltage
CN108330446B (en) * 2018-03-29 2019-11-08 昆明理工大学 A kind of adjustable lanthanum calcium manganese oxygen film Preparation equipment of LIV effect

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004300530A (en) * 2003-03-31 2004-10-28 Stanley Electric Co Ltd Thin film and method for forming the same
CN103956261A (en) * 2014-04-22 2014-07-30 河北大学 Nano-structure multifunctional ferromagnetic composite film material and preparation method
CN106350774A (en) * 2016-09-09 2017-01-25 昆明理工大学 Regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4351213B2 (en) * 2003-09-03 2009-10-28 日鉱金属株式会社 Sputtering target and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004300530A (en) * 2003-03-31 2004-10-28 Stanley Electric Co Ltd Thin film and method for forming the same
CN103956261A (en) * 2014-04-22 2014-07-30 河北大学 Nano-structure multifunctional ferromagnetic composite film material and preparation method
CN106350774A (en) * 2016-09-09 2017-01-25 昆明理工大学 Regulation method of high-temperature thermoelectricity Sr3Co4O9 thin-film electrical resistivity

Also Published As

Publication number Publication date
CN107287564A (en) 2017-10-24

Similar Documents

Publication Publication Date Title
Choi et al. Microwave dielectric properties of scheelite (A= Ca, Sr, Ba) and wolframite (A= Mg, Zn, Mn) AMoO4 compounds
CN107287564B (en) A method of increasing SYCO-314 membrane laser induced potential
CN105624778B (en) A kind of quick method for continuously preparing big domain graphene film
Hong et al. Controllable growth of oriented ZnO nanorods using Ga-doped seed layers and surface acoustic wave humidity sensor
CN109991649A (en) A method of preparing inorganic scintillator film
Sutka et al. Properties of Ni–Zn ferrite thin films deposited using spray pyrolysis
CN104851967B (en) A kind of c-axis orientation bismuth copper selenolite base oxide thermal electric film and preparation method thereof
Chen et al. Effect of temperature on lateral growth of ZnO grains grown by MOCVD
Yokota et al. Effects of Al substitution for Ca3Ta (Ga1− xAlx) 3Si2O14 piezoelectric single crystals
CN105606588A (en) Raman scattering method for measuring GaN thermal expansion coefficient
Chen et al. Efficient preparation of the inclined La1-xCaxMnO3 films with excellent light-induced transverse thermoelectric performance based on MOCVD process
CN102544093A (en) Semiconductor field effect structure and preparation method and application thereof
CN106350774B (en) A kind of high temperature thermoelectric Sr3Co4O9The regulation and control method of film resiativity
Meng et al. Sol-hydrothermal synthesis and characterization of lead zirconate titanate fine particles
Zheng et al. Phase evolution and dielectric/ferroelectric properties of KTa0. 67Nb0. 33O3 single crystal
CN105199730B (en) A kind of method for preparing rear-earth-doped oxidation tungsten nano structure membrane
Li et al. Changes in the growth orientation, morphological and optical properties of sol-gel nanocrystalline ZnO thin films coated with different thickness
Gong et al. Effect of Zr content on microstructure of BaTi2O5 powders prepared by sol–gel method
Roy et al. Structure and properties of magnetoelectric gallium ferrite: a brief review
Bensemma et al. Relaxor behavior in lead-free Ba (Ti1− xScx/2Nbx/2) O3 ceramics
Shanthi et al. Studies on Gd doped ZnO nanocrystalline thin films
Du et al. Large-sized crystal growth and piezoelectric properties of the single crystals of LiNa 5 Mo 9 O 30
CN103645200B (en) The method of ��-XAFS technology in site measurement scorification crystal growth microtexture and miniature crystal growing furnace
Zeng et al. Full-color photoluminescence of ZnO nanorod arrays based on annealing processes
CN101876054A (en) Manganese oxide epitaxial film and preparation method and applications thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant