CN107275725B - A kind of frequency response switchable filter based on SIR load PIN diode structure - Google Patents
A kind of frequency response switchable filter based on SIR load PIN diode structure Download PDFInfo
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- CN107275725B CN107275725B CN201710341321.1A CN201710341321A CN107275725B CN 107275725 B CN107275725 B CN 107275725B CN 201710341321 A CN201710341321 A CN 201710341321A CN 107275725 B CN107275725 B CN 107275725B
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- sir
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/212—Frequency-selective devices, e.g. filters suppressing or attenuating harmonic frequencies
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezo-electric or electrostrictive material
Abstract
The invention discloses a kind of frequency response switchable filter based on SIR load PIN diode structure, filter of the present invention loads PIN diode structure at the short-circuit end end of second order SIR filter, and entire filter construction bilateral symmetry is equal sized.Overall structure can be divided into three layers of upper, middle and lower, and the upper layer of filter is microstrip circuitry, and microstrip circuitry includes feeder line (11), SIR resonator one (21), SIR resonator two (22), switch (31).The middle layer of filter is medium substrate (1), and medium substrate includes multiple metallization VIAs (111).The lower layer of filter is covered by metallic copper (3).The filtering utensil frequency response is changeable, compact-sized transmission zero easy to process, more, it is highly selective the features such as.
Description
Technical field
The present invention relates to tunable optic filter fields, and in particular to a kind of frequency based on SIR load PIN diode structure
Respond switchable filter.
Background technique
Filter is the essential composition portion of the systems such as modern microwave relayed communications, microwave satellite communication, electronic countermeasure
Point, while being also mostly important, the highest microwave passive component of technology content.At present for the research side of electricity-tunable filter
To being concentrated mainly in the tuning of centre frequency and bandwidth, the research that frequency response can be switched is ignored.However in reality
In the life application of border, various communication equipments are all towards miniaturization, and the overwhelming majority can use more in a communications system
The filter construction of kind frequency response, that is, multiple independent filter constructions, it is multiple which results in communication system architectures
It is miscellaneous, volume is larger, unmanageable situation.So if to solve this problem, frequency response switchable filter
Research will be indispensable.
Summary of the invention
It is an object of the invention to be directed to the deficiency of above-mentioned background technique, meet changeable to frequency response in communication equipment
The current demand of filter proposes a kind of frequency response switchable filter based on SIR load PIN diode structure.
The present invention solves its technical problem and is achieved through the following technical solutions:
A kind of frequency response switchable filter based on SIR load PIN diode structure, including medium substrate (1), institute
It states medium substrate (1) upper layer to be printed with microstrip circuitry (2), and the medium substrate (1) lower layer is equipped with copper sheet (3)；
The microstrip circuitry (2) includes identical SIR resonator one (21) and SIR resonator two (22), and the SIR is humorous
It shakes device one (21) and SIR resonator two (22) is symmetrical on medium substrate (1), take some conducts on medium substrate (1)
Coordinate origin takes the symmetry axis of SIR resonator one (21) and SIR resonator two (22) as Y-axis, will be parallel to medium substrate
(1) and perpendicular to the direction of Y-axis as X-axis；
The SIR resonator one (21) and SIR resonator two (22) are divided into first part (211) and second part
(212), one end of first part (211) is set as open end, and one end of second part (212) is set as short-circuit end, and described first
The port of (211) far from open end is divided to be connected with second part (212) far from the port of short-circuit end, and the first part
(211) it arranges along the y axis with second part (212)；The length of the first part (211) along the y axis is less than second
Divide the length of (212) along the y axis, the width of the first part (211) along the x axis is greater than second part (212) along X-axis
The width in direction；
The second part (212) is equipped with feeder line (11), and the feeder line (11) includes signal feed (41) and open circuit branch
It saves (51), the signal feed (41) is vertical with second part (212) to be connect, and the signal feed (41) is parallel with X-axis, and
Signal feed (41) on SIR resonator one (21) is in the side far from SIR resonator two (22), SIR resonator two (22)
On signal feed (41) be in far from SIR resonator one (21) side；Signal feed on the SIR resonator one (21)
(41) it is on same horizontal line with the signal feed (41) on SIR resonator two (22)；The open circuit minor matters (51) are vertical
It is arranged on signal feed (41)；
The short-circuit end of the second part (212) of the SIR resonator one (21) and SIR resonator two (22) includes switch
Structure (31), the construction of switch (31) include PIN diode (71), capacitance (81), choke induction (91), pad one
(101), pad two (102) and pad three (103) offer metallization VIA (111), the PIN on the pad three (103)
Diode (71) loads between pad two (102) and pad three (103), and the choke induction (91) loads on pad one
(101) between pad two (102), the capacitance (81) is loaded between the bottom end of short-circuit end and pad one (101), and
The pad one (101) and pad two (102) are parallel to each other in the X-axis direction, the pad one (101) and pad three (103)
It is parallel to each other in the Y-axis direction；Pad two (102) on the SIR resonator one (21) is in same with signal feed (41)
Side, pad two (102) and signal feed (41) on the SIR resonator two (22) are in the same side.
Further, high resistant is installed between the SIR resonator one (21) and the second part of SIR resonator two (22)
Line (61), the port that the high resistant line (61) connect with SIR resonator one (21) is perpendicular to SIR resonator one (21), the height
The port that resistance line (61) is connect with SIR resonator two (22) is perpendicular to SIR resonator two (22).
Further, the signal feed (41) on the SIR resonator one (21) is used as input port, the SIR resonance
Signal feed (41) on device two (22) is used as output port；Or the signal feed (41) on the SIR resonator one (21)
As output port, the signal feed (41) on the SIR resonator two (22) is used as input port.
Further, the characteristic impedance of the signal feed (41) is 50 ohm.
Further, the signal feed (41) on the SIR resonator one (21) is connected with SIR resonator one (21)
End is set as chamfering, the end that signal feed (41) the SIR resonator two (22) on the SIR resonator two (22) is connected
It is set as chamfering.
The invention has the benefit that
The present invention adjusts the bias of PIN diode both ends load by the structure snd size of the entire filter of rational design
It is positive and negative, control the unlatching and disconnection of PIN diode, reached the change to circuit performance under different biass, to realize
Switching between different filter freguency response.When loading positive bias-voltage, PIN diode conducting, medium substrate upper layer
Microstrip structure be equivalent to the quarter-wave SIR resonator of terminal short circuit, filter response shows as band logical, passes through at this time
Hybrid electromagnetic coupling and open circuit minor matters produce multiple transmission zeros, to improve frequency selectivity.When load reversed bias voltage
When, PIN diode shutdown, the microstrip structure on dielectric-slab upper layer is equivalent to the low-pass filter of load open circuit minor matters, passes through at this time
Multiple minor matters generate transmission zero, to improve frequency selectivity and Out-of-band rejection.And then filter frequency is realized on the whole
The changeable purpose of rate response, and by realizing more transmission zeros, having reached high-frequency to integrally-built ingehious design
Selectivity, miniaturized structure, purpose easy to process.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of printed circuit board of the present invention；
Fig. 2 is the schematic top plan view of microstrip circuitry in the present invention；
Fig. 3 is that the band logical emulation of filter of the present invention and actual measurement schematic diagram, emulation are used using HFSS software, test
Be Agilent N5230C vector network analyzer；
Fig. 4 is that the low pass emulation of filter of the present invention and actual measurement schematic diagram, emulation are used using HFSS software, test
Be Agilent N5230C vector network analyzer.
Description of symbols:
1- medium substrate, 2- microstrip circuitry, 3- copper sheet, 11- feeder line, 21-SIR resonator one, 211- first part,
212- second part, 22-SIR resonator two, 31- construction of switch, 41- signal feed, 51- open circuit minor matters, 61- high resistant line, 71-
PIN diode, 81- capacitance, 91- choke induction, 101- pad one, 102- pad two, 103- pad three, 111- metallization
Via hole.
Specific embodiment
Below by specific embodiment, the invention will be further described, and it is not limit that following embodiment, which is descriptive,
Qualitatively, this does not limit the scope of protection of the present invention.
It will be understood to those skilled in the art that unless otherwise defined, all terms used herein have and the present invention
The identical meaning of the general understanding of those of ordinary skill in fields.It should also be understood that fixed in such as general dictionary
Those of justice term, which should be understood that, to be had a meaning that is consistent with the meaning in the context of the prior art, and unless as this
In equally define, will not be explained in an idealized or overly formal meaning.
As shown in Figure 1, a kind of frequency response switchable filter based on SIR load PIN diode structure, including medium
Substrate 1, the present invention use relative dielectric constant for 2.2, with a thickness of 0.508mm pcb board as medium substrate, can also use
The pcb board of other specifications is as substrate.1 upper layer of medium substrate is printed with microstrip circuitry 2, and microstrip circuitry 2 uses electric conductivity
Can good material, copper product can be used in microstrip circuitry 2, and microstrip circuitry 2 is gold-plated once in a while prevents from aoxidizing.Under medium substrate 1
Layer is equipped with ground of the copper sheet 3 as entire filter.
As shown in Fig. 2, microstrip circuitry 2 includes identical SIR resonator 1 and SIR resonator 2 22, SIR resonator
One 21 is identical with 2 22 structure of SIR resonator, and SIR resonator 1 and SIR resonator 2 22 are mutual on 1 upper layer of medium substrate
Symmetrically.It is chosen on medium substrate 1 and is a little used as coordinate origin, by the symmetry axis of SIR resonator 1 and SIR resonator 2 22
As Y-axis, medium substrate 1 will be parallel to and perpendicular to the direction of Y-axis as X-axis.
SIR resonator 1 and SIR resonator 2 22 are divided into first part 211 and second part 212, first part
211 and second part 212 be rectangle, one end of first part 211 is set as open end, and one end of second part 212 is set as short
Terminal.Port of the first part 211 far from open end is connected with second part 212 far from the port of short-circuit end, and first part
211 and second part 212 arrange along the y axis.The length of first part 211 along the y axis is 18.85mm, first part 211
Width along the x axis is 5.1mm.The length of second part 212 along the y axis is 26.5mm, and second part 212 is along X-axis side
To width be 1.2mm.
Second part 212 is equipped with feeder line 11, and feeder line 11 includes signal feed 41 and open circuit minor matters 51.Signal feed 41 with
X-axis is parallel, and the signal feed 41 on SIR resonator 1 is in the side far from SIR resonator 2 22, SIR resonator two
Signal feed 41 on 22 is in the side far from SIR resonator 1.Signal feed 41 and SIR on SIR resonator 1
Signal feed 41 on resonator 2 22 is on same horizontal line.The width of signal feed 41 along the y axis is 1.5mm,
Length along the x axis is 7mm.The distance of the short-circuit end apart from 212 bottom end of second part along the y axis of signal feed 41 is
12mm.The end that signal feed 41 is connected with SIR resonator 1 is set as the chamfering that length along the x axis is 0.5mm, letter
The end that number feeder line 41SIR resonator 2 22 is connected is also provided with the chamfering that length along the x axis is 0.5mm.The setting of chamfering
It is in order to propose high q-factor sensitivity, to preferably adjust matching.The characteristic impedance of signal feed 41 is 50 ohm.
Open circuit minor matters 51 are vertically set in signal feed 41, open circuit minor matters 51 distance SIR resonator one in the X-axis direction
The distance of 21 or SIR resonator 2 22 is 2.5mm, and the length of open circuit minor matters 51 along the y axis is 11mm, and minor matters 51 of opening a way are along X
The width of axis direction is 0.2mm.
High resistant line 61 is installed between SIR resonator 1 and the second part of SIR resonator 2 22, high resistant line 61 with
The port that the port that SIR resonator 1 connects is connect perpendicular to SIR resonator 1, high resistant line 61 with SIR resonator 2 22
Perpendicular to SIR resonator 2 22.High resistant line 61 is divided into five line segments along the x axis, wherein three sections are in same horizontal line, and
This three sections close to first parts 211, other two sections of opposite separate first parts 211, and this two sections also are located at same horizontal line
On；High resistant line 61 is divided into four alignment sections being parallel to each other along the y axis, this four alignments section be parallel to five line segments of X-axis according to
Secondary connection.Five are parallel to the line segment of X-axis from left to right, length in the X-axis direction be followed successively by 1.65mm, 1.9mm, 1.5mm,
1.9mm,1.65mm；Four are parallel to Y-axis and the line segment length that is mutually juxtaposed is 5.9mm, and the present invention uses this structure pair
There is certain humidification in magnetic coupling.
The short-circuit end of the second part 212 of SIR resonator 1 and SIR resonator 2 22 includes construction of switch 31, is opened
Closing structure 31 includes PIN diode 71, capacitance 81, choke induction 91, pad 1, pad 2 102 and pad 3 103.
Pad 1, pad 2 102 and pad 3 103 are the squares that length is 1.2mm.Metallization is offered on pad 3 103
Via hole 111, metallization VIA 111 are located at 103 center of pad, bore dia 0.4mm.PIN diode 71 loads on weldering
Between disk 2 102 and pad 3 103, wherein the bias voltage of PIN diode 71 is loaded by pad 2 102.Choke induction 91
It loads between pad 1 and pad 2 102, inductance value 120nH.Capacitance 81 loads on bottom end and the weldering of short-circuit end
Between disk 1, capacitance 220pF.Distance of the pad 1 in the Y-axis direction apart from 212 bottom end of second part be
0.8mm.Pad 1 and pad 2 102 are parallel to each other in the X-axis direction, and pad 1 and pad 2 102 are in the X-axis direction
At a distance of 0.8mm.Pad 1 and pad 3 103 are parallel to each other in the Y-axis direction, and pad 1 and pad 3 103 are in Y-axis side
Upwards at a distance of 0.8mm.Pad 2 102 and signal feed 41 on SIR resonator 1 are in the same side, SIR resonator 2 22
On pad 2 102 and signal feed 41 be in the same side.
Signal feed 41 in the present invention on SIR resonator 1 is used as input port, the signal on SIR resonator 2 22
Feeder line 41 is used as output port.Or the signal feed 41 on SIR resonator 1 is used as output port, SIR resonator 2 22
On signal feed 41 be used as input port.
Input port and output port of the invention is all made of SMA welding, to access test or to be connected with circuit.
This structure adjusts biased electrical of the load on pad 2 102 by the overall dimension configuration of rational design filter
It presses to control the on off operating mode of PIN diode 71, has reached the change to circuit structure under different biass, to realize not
Switching between same filter freguency response.Wherein choke induction 91 passes through 102 pairs of external worlds of pad for controlling AC signal
The interference that DC signal source generates, while preventing unwanted AC signal from entering filter by pad 102.Capacitance 81
For preventing the direct current signal loaded by pad 102 from entering filter, filter two is docked at so as to avoid direct current signal
The other equipment at end generate interference and damage.It is timing when loading voltage on pad 2 102,71 positively biased of PIN diode, this
When PIN diode be connected, microstrip structure passes through the ground connection of the metallization VIA 111 on pad 103 at this time on medium substrate 1, equivalent
For the quarter-wave SIR resonator of terminal short circuit, filter response shows as band logical, wherein high resistant line 61 be magnetic coupling most
Strong region, effect are equivalent to an inductance, and the first part 211 of SIR resonator is to be electrically coupled most strong region, pass through mixing at this time
Electromagnetic coupling and open circuit minor matters introduce transmission zero, enhance the selectivity of this filter.When voltage of the load on pad 102
Be negative perhaps zero when PIN diode 71 is reverse-biased or zero bias, PIN diode ends at this time, the microstrip structure on medium substrate 1
Open circuit minor matters are equivalent to, magnetic coupling coefficient declines rapidly, and the transmission zero on the passband left side also disappears therewith, and circuit shows as typical case
Low pass circuit, the frequency response of filter at this time show as low pass.And the transmission zero on the right of filter passband is by open circuit minor matters
Become coupling with frequency to generate, so still remaining.When two PIN diodes 71 in filter of the present invention bias difference, i.e., one
Positively biased one it is reverse-biased when, filter can not work normally.
The medium substrate 1 of filter includes multiple metallization VIAs 111, and 111 diameter of metallization VIA is 0.4mm.Filtering
The lower layer of device is completely covered by metallic copper, the ground as entire filter.
As shown in Figure 3,4, the band logical of filter respectively of the present invention and the emulation of low pass scattering parameter and measured result.From reality
From the point of view of surveying in result, centre frequency is 0.82GHz when band logical, and three dB bandwidth is that 240MHz with interior Insertion Loss is less than 1dB；3dB when low pass
Bandwidth is 670MHz, is less than 1.7dB with interior Insertion Loss.It is real as can be seen that emulation and measured result coincide substantially from Comparative result
Measured center frequency, three dB bandwidth and transmission zero location are consistent with design of Simulation, and wherein the insertion loss of measurement error is slightly inclined
Big reason is derived from when mismachining tolerance and sub-miniature A connector overlap that there are one section of impedance mismatchs.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also answered
It is considered as protection scope of the present invention.
Claims (5)
1. a kind of frequency response switchable filter based on SIR load PIN diode structure, it is characterised in that: including medium
Substrate (1), medium substrate (1) upper layer are printed with microstrip circuitry (2), and the medium substrate (1) lower layer is equipped with copper sheet
(3)；
The microstrip circuitry (2) includes identical SIR resonator one (21) and SIR resonator two (22), the SIR resonator
One (21) and SIR resonator two (22) are symmetrical on medium substrate (1), take on medium substrate (1) a little as coordinate
Origin takes the symmetry axis of SIR resonator one (21) and SIR resonator two (22) as Y-axis, will be parallel to medium substrate (1) and
Perpendicular to Y-axis direction as X-axis；
The SIR resonator one (21) and SIR resonator two (22) are divided into first part (211) and second part (212), the
The one end of a part of (211) is set as open end, and one end of second part (212) is set as short-circuit end, and the first part (211) is remote
The port for leaving terminal is connected with second part (212) far from the port of short-circuit end, and the first part (211) and second
(212) are divided to arrange along the y axis；The length of the first part (211) along the y axis is less than second part (212) along Y-axis side
To length, the width of the first part (211) along the x axis be greater than the width of second part (212) along the x axis；
The second part (212) is equipped with feeder line (11), and the feeder line (11) includes signal feed (41) and open circuit minor matters
(51), the signal feed (41) is vertical with second part (212) connect, and the signal feed (41) is parallel with X-axis, and SIR
Signal feed (41) on resonator one (21) is on the side far from SIR resonator two (22), SIR resonator two (22)
Signal feed (41) is in the side far from SIR resonator one (21)；Signal feed (41) on the SIR resonator one (21)
It is on same horizontal line with the signal feed (41) on SIR resonator two (22)；The open circuit minor matters (51) are vertically arranged
On signal feed (41)；
The short-circuit end of the second part (212) of the SIR resonator one (21) and SIR resonator two (22) includes construction of switch
(31), the construction of switch (31) include PIN diode (71), capacitance (81), choke induction (91), pad one (101),
Pad two (102) and pad three (103) offer metallization VIA (111), the PIN diode on the pad three (103)
(71) it loads between pad one (101) and pad three (103), the choke induction (91) loads on pad one (101) and weldering
Between disk two (102), the capacitance (81) is loaded between the bottom end of short-circuit end and pad one (101), and the pad
One (101) and pad two (102) are parallel to each other in the X-axis direction, and the pad one (101) and pad three (103) are in Y direction
On be parallel to each other；The signal feed (41) of pad two (102) and SIR resonator one (21) on the SIR resonator one (21)
In the same side, the signal feed (41) of pad two (102) and SIR resonator two (22) on the SIR resonator two (22)
In the same side.
2. a kind of frequency response switchable filter based on SIR load PIN diode structure as described in claim 1,
It is characterized in that: high resistant line (61) is installed between the SIR resonator one (21) and the second part of SIR resonator two (22),
The port that the high resistant line (61) connect with SIR resonator one (21) is perpendicular to SIR resonator one (21), the high resistant line (61)
The port connecting with SIR resonator two (22) is perpendicular to SIR resonator two (22).
3. a kind of frequency response switchable filter based on SIR load PIN diode structure as described in claim 1,
Be characterized in that: the signal feed (41) on the SIR resonator one (21) is as input port, the SIR resonator two (22)
On signal feed (41) be used as output port；Or the signal feed (41) on the SIR resonator one (21) is as output
Port, the signal feed (41) on the SIR resonator two (22) are used as input port.
4. a kind of frequency response switchable filter based on SIR load PIN diode structure as claimed in claim 3,
Be characterized in that: the characteristic impedance of the signal feed (41) is 50 ohm.
5. a kind of frequency response switchable filter based on SIR load PIN diode structure as described in claim 1,
It is characterized in that: the end setting that the signal feed (41) on the SIR resonator one (21) is connected with SIR resonator one (21)
For chamfering, the end that signal feed (41) the SIR resonator two (22) on the SIR resonator two (22) is connected is set as down
Angle.
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| CN201710341321.1A CN107275725B (en) | 2017-05-16 | 2017-05-16 | A kind of frequency response switchable filter based on SIR load PIN diode structure |
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| CN201710341321.1A CN107275725B (en) | 2017-05-16 | 2017-05-16 | A kind of frequency response switchable filter based on SIR load PIN diode structure |
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| CN108123193A (en) * | 2018-02-07 | 2018-06-05 | 南京信息工程大学 | A kind of transmission zero variable band-pass filter of T-shaped source load coupling |
| CN113013566B (en) * | 2021-03-21 | 2022-01-28 | 南通大学 | Switchable microstrip double balun |
| CN113224495B (en) * | 2021-05-06 | 2022-11-22 | 南通大学 | Switchable resonator structure and dielectric waveguide filter having the same |
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| CN102280678A (en) * | 2011-05-27 | 2011-12-14 | 华南理工大学 | Balanced radio frequency electrically tunable bandpass filter with constant relative bandwidth |
| CN105529515A (en) * | 2016-01-28 | 2016-04-27 | 华南理工大学 | Adjustable bandpass-bandstop filter based on loading on open circuit branch |
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- 2017-05-16 CN CN201710341321.1A patent/CN107275725B/en not_active Expired - Fee Related
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| CN102280678A (en) * | 2011-05-27 | 2011-12-14 | 华南理工大学 | Balanced radio frequency electrically tunable bandpass filter with constant relative bandwidth |
| CN105529515A (en) * | 2016-01-28 | 2016-04-27 | 华南理工大学 | Adjustable bandpass-bandstop filter based on loading on open circuit branch |
| CN105552494A (en) * | 2016-01-28 | 2016-05-04 | 华南理工大学 | Adjustable flat band-pass and band-stop filter |
| CN105720339A (en) * | 2016-03-30 | 2016-06-29 | 华南理工大学 | Dual-band adjustable band-pass filter |
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| "Quarter-wavelength stepped-impedance resonator filter with mixed electric and magnetic coupling";Fang Zhu et al;《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》;20140228;第24卷(第2期);第90-92页 |
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