CN107275486B - Double-layer double-scale composite structure oxide-titanium dioxide film and preparation process and application thereof - Google Patents
Double-layer double-scale composite structure oxide-titanium dioxide film and preparation process and application thereof Download PDFInfo
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- CN107275486B CN107275486B CN201710375600.XA CN201710375600A CN107275486B CN 107275486 B CN107275486 B CN 107275486B CN 201710375600 A CN201710375600 A CN 201710375600A CN 107275486 B CN107275486 B CN 107275486B
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- titanium dioxide
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 154
- 239000004408 titanium dioxide Substances 0.000 title claims abstract description 53
- 239000002131 composite material Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000002245 particle Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000011148 porous material Substances 0.000 claims abstract description 28
- 229910003074 TiCl4 Inorganic materials 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 11
- 230000007062 hydrolysis Effects 0.000 claims abstract description 10
- 238000006460 hydrolysis reaction Methods 0.000 claims abstract description 10
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 65
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 56
- 239000010408 film Substances 0.000 claims description 52
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 42
- 239000011159 matrix material Substances 0.000 claims description 36
- 238000001035 drying Methods 0.000 claims description 29
- 238000005406 washing Methods 0.000 claims description 24
- 238000007789 sealing Methods 0.000 claims description 22
- 239000000243 solution Substances 0.000 claims description 21
- 239000007864 aqueous solution Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000002791 soaking Methods 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 9
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- 239000003112 inhibitor Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 150000003841 chloride salts Chemical class 0.000 claims 1
- RCJVRSBWZCNNQT-UHFFFAOYSA-N dichloridooxygen Chemical class ClOCl RCJVRSBWZCNNQT-UHFFFAOYSA-N 0.000 claims 1
- 229910001510 metal chloride Chemical class 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002994 raw material Substances 0.000 abstract description 2
- 229910052719 titanium Inorganic materials 0.000 abstract description 2
- 239000010936 titanium Substances 0.000 abstract description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 48
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 24
- 238000001816 cooling Methods 0.000 description 18
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 238000004140 cleaning Methods 0.000 description 11
- 238000012986 modification Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000005245 sintering Methods 0.000 description 7
- 238000000861 blow drying Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000007664 blowing Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- ZQIOYUJCFJBZAZ-UHFFFAOYSA-N chloro hypochlorite ethanol zirconium Chemical compound C(C)O.O(Cl)Cl.[Zr] ZQIOYUJCFJBZAZ-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical compound [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
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CN112786793B (en) * | 2020-12-24 | 2023-10-10 | 隆基绿能科技股份有限公司 | Composite carrier transport layer, preparation method thereof, solar cell and light-emitting device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2011103494A1 (en) * | 2010-02-18 | 2011-08-25 | Onesun, Inc. | Systems and methods for preparing components of photovoltaic cells |
CN102385997A (en) * | 2010-08-27 | 2012-03-21 | 财团法人工业技术研究院 | Multilayer-structure nanometer titanium dioxide photoelectrode and manufacturing method thereof |
CN103236351A (en) * | 2013-04-16 | 2013-08-07 | 浙江理工大学 | Method for preparing grainsize-graded nanocrystalline TiO2 porous films |
CN105762283A (en) * | 2016-05-05 | 2016-07-13 | 天津市职业大学 | Perovskite solar cell light-absorbing layer nano sol film-coating solution and preparation method |
CN105810832A (en) * | 2016-03-22 | 2016-07-27 | 南京工业大学 | Perovskite solar cell optimized based on oxide with excellent conductivity |
CN106328721A (en) * | 2015-07-06 | 2017-01-11 | 南京理工大学 | Dual-dimensional nano-networked titanium dioxide mesoporous layer and preparation method therefor |
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US9522384B2 (en) * | 2013-03-28 | 2016-12-20 | Jm Material Technology Inc. | Photocatalytic structure and method for manufacturing photocatalytic sol-gels |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011103494A1 (en) * | 2010-02-18 | 2011-08-25 | Onesun, Inc. | Systems and methods for preparing components of photovoltaic cells |
CN102385997A (en) * | 2010-08-27 | 2012-03-21 | 财团法人工业技术研究院 | Multilayer-structure nanometer titanium dioxide photoelectrode and manufacturing method thereof |
CN103236351A (en) * | 2013-04-16 | 2013-08-07 | 浙江理工大学 | Method for preparing grainsize-graded nanocrystalline TiO2 porous films |
CN106328721A (en) * | 2015-07-06 | 2017-01-11 | 南京理工大学 | Dual-dimensional nano-networked titanium dioxide mesoporous layer and preparation method therefor |
CN105810832A (en) * | 2016-03-22 | 2016-07-27 | 南京工业大学 | Perovskite solar cell optimized based on oxide with excellent conductivity |
CN105762283A (en) * | 2016-05-05 | 2016-07-13 | 天津市职业大学 | Perovskite solar cell light-absorbing layer nano sol film-coating solution and preparation method |
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Effective date of registration: 20230713 Address after: 710048 Teaching collective household, No. 31 Xianning West Road, Beilin District, Xi'an City, Shaanxi Province Patentee after: Yang Guanjun Address before: Beilin District Xianning West Road 710049, Shaanxi city of Xi'an province No. 28 Patentee before: XI'AN JIAOTONG University |
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Effective date of registration: 20240710 Address after: Room 507, Block B, Gaoxin Ginza, No. 6 Gaoxin Road, High tech Zone, Xi'an City, Shaanxi Province, 710075 Patentee after: Kaifu Green Energy (Xi'an) Optoelectronics Co.,Ltd. Country or region after: China Address before: 710048 Teaching collective household, No. 31 Xianning West Road, Beilin District, Xi'an City, Shaanxi Province Patentee before: Yang Guanjun Country or region before: China |
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