CN107272286A - Liquid crystal display device - Google Patents
Liquid crystal display device Download PDFInfo
- Publication number
- CN107272286A CN107272286A CN201710096908.0A CN201710096908A CN107272286A CN 107272286 A CN107272286 A CN 107272286A CN 201710096908 A CN201710096908 A CN 201710096908A CN 107272286 A CN107272286 A CN 107272286A
- Authority
- CN
- China
- Prior art keywords
- electrode
- switch element
- storage line
- storage
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 67
- 238000003860 storage Methods 0.000 claims abstract description 308
- 238000009826 distribution Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000007667 floating Methods 0.000 claims description 23
- 239000010410 layer Substances 0.000 description 72
- 239000010408 film Substances 0.000 description 35
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- 238000010586 diagram Methods 0.000 description 19
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- 101000822028 Homo sapiens Solute carrier family 28 member 3 Proteins 0.000 description 6
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- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 description 2
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- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
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- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N germanium monoxide Inorganic materials [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
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- 230000006872 improvement Effects 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
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- 238000007789 sealing Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229960001296 zinc oxide Drugs 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- G02F1/133514—Colour filters
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/133553—Reflecting elements
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
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- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136218—Shield electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
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Abstract
A kind of liquid crystal display device, including:Substrate;First grid polar curve;Data wire;First sub-pixel unit, including first switching element, and the first pixel electrode, are connected with the second electrode of first switching element;Second sub-pixel unit, including second switch element, the second switch element includes the coordination electrode being connected with first grid polar curve and the first electrode being connected with data wire, second pixel electrode, it is connected with the second electrode of second switch element, and the 3rd switch element, the 3rd switch element includes the coordination electrode being connected with first grid polar curve;And distribution is stored, the storage distribution includes:First storage line, its at least a portion is overlapping with the first pixel electrode;And the second storage line, its at least a portion is overlapping with the second pixel electrode.
Description
The citation of related application
This application claims the korean patent application submitted on April 4th, 2016 priority of No. 10-2016-0041108
And resulting ownership equity, entire contents are hereby incorporated by by being cited.
Technical field
The illustrative embodiments of the present invention are related to a kind of liquid crystal display device.
Background technology
The importance of display device increases with multimedia development.Therefore, using various types of display dresses
Put, liquid crystal display (" LCD ") device, organic light emitting display (" OLED ") device etc..
Among various types of display devices, the LCD device of one of most widely used panel display apparatus, including two
Individual substrate, the substrate is provided with field generation electrode, such as pixel electrode and common electrode, and is arranged between two substrates
Liquid crystal layer.LCD device, which has, applies a voltage to field generation electrode to generate the structure of the electric field in liquid crystal layer, and therefore true
Determine the direction of the liquid crystal molecule in liquid crystal layer and determine the polarization of incident light, so that display image.
Among various types of liquid-crystal apparatus, the master of the LCD device of vertical orientation, wherein liquid crystal molecule has been developed
Axis is arranged on the direction of display panel.The LCD device of vertical orientation had been developed that as with various structures, including
One pixel is divided into two sub-pixels to ensure the structure of enough side visibilities.
The content of the invention
The illustrative embodiments of the present invention provide a kind of liquid crystal display (" LCD ") device, and the device is reduced for voltage
The ripple of the signal of distribution.
Another illustrative embodiments of the present invention provide a kind of LCD device, and which solves current-resistance
Phenomenon drops in (" IR ").
Another illustrative embodiments of the present invention provide a kind of LCD device, and the device reduces horizontal cross moment of torsion.
According to an illustrative embodiment of the invention, the ripple of the signal distributed for voltage is reduced, and is therefore improved
IR drop phenomenons.
In addition, reducing horizontal cross moment of torsion.
However, the illustrative embodiments of the present invention are not limited to embodiment set forth herein.By referring to following
The detailed description of the invention provided, above and other illustrative embodiments of the invention are for skill of the art
Art personnel will become apparent.
The illustrative embodiments of the present invention disclose a kind of LCD device, including:Substrate;First grid polar curve, is arranged in base
On plate;Data wire, is arranged on first grid polar curve;First sub-pixel unit, including first switching element, the first switching element
Including:The coordination electrode being connected with first grid polar curve and the first electrode being connected with data wire, and the first pixel electrode, with
The second electrode connection of first switching element;Second sub-pixel unit, including second switch element, the second switch element bag
Include:The coordination electrode being connected with first grid polar curve and the first electrode being connected with data wire, the second pixel electrode, are opened with second
Close the second electrode connection of element, and the 3rd switch element, including the coordination electrode being connected with first grid polar curve;And storage
Distribution, including the first storage line, its at least a portion are overlapping with the first pixel electrode, and the second storage line, and it at least one
Part is overlapping with the second pixel electrode.The first electrode of 3rd switch element can be arranged in deposits with the first storage line and second
On the different layer of layer that storage line is disposed thereon, and be connected with both the first storage line and second storage line, and the 3rd switchs
The second electrode of element can be connected with the second pixel electrode.
The illustrative embodiments of the present invention also disclose a kind of LCD device, including:Substrate;Gate line, is arranged in substrate
On;Data wire, is arranged on gate line;Distribution, including the first storage line and the second storage line are stored, is arranged in and gate line cloth
Put on layer identical layer thereon, and the 3rd storage line, it is arranged on the layer identical layer being disposed thereon with data wire,
And it is connected with both the first storage line and the second storage line;First sub-pixel unit, including:First switching element, with grid
Line and data wire connection, and the first pixel electrode, its at least a portion and the first storage line overlap, and and first switch
Element is connected;And second sub-pixel unit, including:Second switch element, is connected with gate line and data wire, the second sub-pixel
Electrode, its at least a portion and the second storage line overlap, and be connected with second switch element, and the 3rd switch element, with
Second pixel electrode and the 3rd storage line connection.
A kind of LCD device includes:Substrate;First grid polar curve, is arranged on substrate;First data wire, is arranged in the first grid
On polar curve;Distribution, including the first storage line and the second storage line are stored, the layer identical being disposed thereon with gate line is arranged in
On layer, and the 3rd storage line, it is arranged on the layer identical layer being disposed thereon with the first data wire, and stored with first
A connection in line and the second storage line;First sub-pixel unit, including first switching element, with first grid polar curve and first
Data wire is connected, and the first pixel electrode, its at least a portion and the first storage line overlap, and and first switching element
Connection;And second sub-pixel unit, including second switch element, it is connected with first grid polar curve and the first data wire, the second son
Pixel electrode, its at least a portion and the second storage line overlap, and be connected with second switch element, and the 3rd switch member
Part, is connected with the second pixel electrode, wherein the 3rd storage line and both the first pixel electrode and the second pixel electrode weight
It is folded.
Brief description of the drawings
The illustrative embodiments of the present invention are described in detail by reference to accompanying drawing, of the invention is above and other exemplary
Embodiment and feature will become apparent, wherein:
Fig. 1 is the example of the first pixel cell of the configuration for showing liquid crystal display (" LCD ") device according to the present invention
The equivalent circuit diagram of property embodiment;
Fig. 2 be have been explicitly shown figure 1 illustrates the first pixel cell plan;
Fig. 3 is the sectional view along Fig. 2 line I-I ' interceptions;
Fig. 4 is the cross-sectional view intercepted along Fig. 2 line II-II ';
Fig. 5 is the sectional view along Fig. 2 line III-III ' and IV-IV ' interception;
Fig. 6 is the first grid polar curve, the first storage line and the second storage line for showing LCD device shown in figure 2
Schematic diagram;
Fig. 7 is the schematic diagram for the data conductor for showing LCD device shown in figure 2;
Fig. 8 be show figure 1 illustrates the first pixel cell and the second pixel cell for being attached thereto it is equivalent
Circuit diagram;
Fig. 9 be have been explicitly shown figure 8 illustrates the first pixel cell and the second pixel cell plan;
Figure 10 is to show the first pixel cell of configuration of the LCD device according to the present invention, the 3rd pixel cell and the
The equivalent circuit diagram of another illustrative embodiments of four pixel cells;
Figure 11 is the signal of the illustrative embodiments of the storage distribution for the configuration for showing the LCD device according to the present invention
Figure;
Figure 12 is the illustrative embodiments for showing the feedback circuit unit in the configuration according to the LCD device of the present invention
Schematic diagram;
Figure 13 is another the exemplary reality for showing the first pixel cell in the configuration according to the LCD device of the present invention
Apply the equivalent circuit diagram of mode;
Figure 14 be have been explicitly shown figure 13 illustrates the first pixel cell plan;
Figure 15 is the sectional view along Figure 14 line V-V ' interceptions;
Figure 16 is the sectional view along Figure 14 line VI-VI ' interceptions;
Figure 17 be show figure 13 illustrates the first pixel cell and second pixel adjacent with the first pixel cell
The equivalent circuit diagram of unit;
Figure 18 be have been explicitly shown figure 17 illustrates the first pixel cell and the second pixel cell plan;And
Figure 19 is the chart for illustrating the illustrative embodiments of the effect of the LCD device according to the present invention.
Embodiment
In the following description, for purposes of illustration, multiple details are elaborated, to provide to various exemplary implementations
The comprehensive understanding of mode.It will be apparent, however, that in the case of these details or one or many can be utilized
Individual equivalent arrangements, put into practice various illustrative embodiments.In other instances, it show in block form well-known structure
And device, to avoid unnecessarily making various illustrative embodiments hard to understand.
In the accompanying drawings, the size and relative size in layer, film, panel, region etc. can be for clear and description purposes
It is amplified.In addition, same reference numerals represent similar elements.
When element or layer be referred to as another element or layer " on ", " being connected to " or " being coupled to " another element
Or during layer, it can be directly on another element or layer, be connected to or be coupled to another element or layer, or can be with
There is intermediary element or layer.However, when element or layer are referred to as " directly on another element or layer ", " be directly connected to
To " or when " being coupled directly to " another element or layer, then in the absence of any intermediary element or layer.For the mesh of the disclosure
, " in X, Y and Z at least one " and " in the group being made up of X, Y and Z at least one " can be interpreted only
Two or more any combination in X, only Y, only Z or X, Y and Z, such as, for example, XYZ, XYY, YZ and ZZ.Complete
Wen Zhong, same reference numerals refer to identical element.As used in this article, term "and/or" includes one or more
Any and all combination of associated listed.
Although herein term first, second etc. can be used to describe each element, part, region, layer, and/or portion
Point, however, these elements, part, region, layer, and/or part should not be limited by these terms.These terms are used for one
Element, part, region, layer, and/or part are mutually distinguished with another element, part, region, layer, and/or part.Therefore, exist
Without departing substantially from the disclosure teaching in the case of, the first element discussed below, part, region, layer, and/or part be referred to alternatively as
Second element, part, region, layer, and/or part.
For the purpose of description, can use herein such as " ... under (beneath) ", " ... below
(below) ", " bottom (lower) ", " ... above (above) " and space relative terms such as " top (upper) ", with by
This describes the element or feature and other elements or the relation of feature shown in accompanying drawing.Space relative terms are intended to include removing
Device is differently directed in external use, operation, and/or the manufacture of orientation described in accompanying drawing.If for example, by figure
Device upset, then be described as be in other elements or feature " following " or " under " element be then oriented in other elements
Or " above " of feature.Therefore, exemplary term " ... below " may include above and below two orientation.Moreover, will can fill
Put otherwise orientation (for example, being rotated by 90 ° or in other orientations), and thus correspondingly explaining used herein
Space relative descriptors.
Term used herein is in order at the purpose for describing specific embodiment and is not intended to limit.Unless up and down
Text is expressly stated otherwise, otherwise as it is used herein, singulative " one (a) ", " one (an) " and " (the) " are intended to also wrap
Include plural form.Moreover, when term " including (comprises) ", " including (comprising) ", " including (includes) "
And/or " include (including) ", when being used for this specification, these terms indicate described feature, entirety, step, operation, member
The presence of part, part and/or its group, but it is not precluded from other one or more features, entirety, step, operation, element, part
And/or the presence or addition of its group.
The related error in view of the measurement in discussion and with the measurement of specified quantitative (that is, the limitation of measuring system), such as
" about " used herein or it is " approximate " include described value, and represent such as by one of ordinary skill in the art determine it is specific
In the tolerance interval of the deviation of value.In the exemplary embodiment, " about " can represent one or more standard deviations it
It is interior, or within ± 30%, 20%, 10%, the 5% of described value.
Next pair is illustrated herein by reference to the section as Utopian illustrative embodiments and/or the schematic diagram of intermediate structure
Each illustrative embodiments is described.It therefore, it is expected to due to the diagram produced by such as manufacturing technology and/or tolerance
Change in shape.Therefore, illustrative embodiments disclosed herein should not be construed as being limited to the area specifically illustrated
Domain shape, but including the form variations because of generations such as manufacturing process.For example, the injection zone for being shown as rectangle is usual
Have with circular or curvilinear characteristic, and/or at its edge the gradient of implantation concentration (implant concentration) without
It is the binary change from injection zone to non-implanted region.Equally, by injecting the buried region (buried region) formed
The injection of some of region between the surface therefrom injected can be caused in buried region.Therefore, shown in accompanying drawing
Region is substantially schematical, and the shape in these regions is not intended as the true form in the region for showing device, and not
It is intended to limit the invention.
Unless otherwise defined, otherwise, all terms (including technical term and scientific terminology) used herein have with
The disclosure is the identical meanings that are generally understood that of those of ordinary skill in part thereof of field.Institute in such as usually used dictionary
Those terms of definition should be interpreted as having the implication consistent with its implication in the context of association area, and will not
Explained with the meaning for idealizing or excessively formalizing, unless clearly so limited herein.
Hereinafter, it will be described in detail with reference to the accompanying drawings the preferred embodiment of the present invention.
Fig. 1 is to schematically show matching somebody with somebody for liquid crystal display (" LCD ") device according to an illustrative embodiment of the invention
The equivalent circuit diagram for the first pixel cell put.First, the first pixel cell PX1 will be described with reference to Fig. 1.
Reference picture 1, the first pixel cell PX1 can include the first sub-pixel unit SPX1 and the second sub-pixel unit
SPX2。
First pixel cell PX1 can be connected with first grid polar curve GL1 and the first data wire DL1.First grid polar curve GL1 can
To extend on d1 in a first direction.First grid polar curve GL1 can receive first grid signal G1 from drive element of the grid.First number
It can extend according to line DL1 on the second direction d2 different from first direction d1.First data wire DL1 can be from data-driven list
Member receives the first data-signal D1.First direction d1 can intersect vertically with second direction d2.In Fig. 1, first direction d1 quilts
Illustrate as line direction, and second direction d2 is illustrated as column direction.
First sub-pixel unit SPX1 can include first switching element TR1 and the first pixel electrode PE1.Show at one
In example property embodiment, first switching element TR1 can be three-terminal element, such as thin film transistor (TFT) (" TFT ").First switch member
Part TR1 coordination electrode can be connected with first grid polar curve GL1, and first switching element TR1 first electrode can be with
One data wire DL1 connections.In addition, first switching element TR1 second electrode can be connected with the first pixel electrode PE1.
In one illustrative embodiments, for example, first switching element TR1 coordination electrode can be gate electrode, and first switch
Element TR1 first electrode can be source electrode.In the exemplary embodiment, first switching element TR1 second electrode can
To be drain electrode.
First switching element TR1 is turned on so as to will be from the according to the first grid signal G1 received from first grid polar curve GL1
The first data-signal D1 that one data wire DL1 is received is provided to the first pixel electrode PE1.
First sub-pixel unit SPX1 may further include be arranged in the first pixel electrode PE1 and common electrode CE it
Between the first liquid crystal capacitor Clc1.First liquid crystal capacitor Clc1 be filled with provide to the first pixel electrode PE1 voltage and
There is provided to the voltage difference between common electrode CE voltage.
Second sub-pixel unit SPX2 can include second switch element TR2, the 3rd switch element TR3 and the second sub-pixel
Electrode PE2.In an illustrative embodiments, in second switch element TR2 and the 3rd switch element TR3 can be each
Three-terminal element, such as TFT.
Second switch element TR2 coordination electrode can be connected with first grid polar curve GL1, and second switch element TR2
First electrode can be connected with the first data wire DL1.In addition, second switch element TR2 second electrode can be with the second son
Pixel electrode PE2 connections.In an illustrative embodiments, for example, second switch element TR2 coordination electrode can be grid
Electrode, and second switch element TR2 first electrode can be source electrode.In the exemplary embodiment, for example, second opens
The second electrode for closing element TR2 can be drain electrode.
Second switch element TR2 is turned on so as to will be from the according to the first grid signal G1 received from first grid polar curve GL1
The first data-signal D1 that one data wire DL1 is received applies to the second pixel electrode PE2.
3rd switch element TR3 coordination electrode can be connected with first grid polar curve GL1, and the 3rd switch element TR3
First electrode can be connected with first node N1.In addition, the 3rd switch element TR3 second electrode can be with the second sub-pixel
Electrode PE2 connections.In an illustrative embodiments, the 3rd switch element TR3 coordination electrode can be gate electrode, and
3rd switch element TR3 first electrode can be source electrode.In the exemplary embodiment, the of the 3rd switch element TR3
Two electrodes can be drain electrode.3rd switch element TR3 can be by first node N1 with then storing line by the 3rd of description the
RL3 connections.
3rd switch element TR3 is turned on so as to will be from the according to the first grid signal G1 received from first grid polar curve GL1
The storage signal S that three storage line RL3 are received applies to the second pixel electrode PE2.Second sub-pixel unit SPX2 can enter one
Step includes the second liquid crystal capacitor Clc2 being arranged between the second pixel electrode PE2 and common electrode CE.As storage signal S
When putting on the second pixel electrode PE2, apply to the second pixel electrode PE2 electricity corresponding with the first data-signal D1
The part of pressure is divided.Therefore, the level for the voltage being filled with the second liquid crystal capacitor Clc2, which is less than, is filled with the first liquid crystal capacitance
The level of voltage in device Clc1.
Because the level for the voltage being filled with the first liquid crystal capacitor Clc1 is with being filled with the second liquid crystal capacitor Clc2
The level of voltage is different, so the inclination angle of the first sub-pixel unit SPX1 liquid crystal molecule and the second sub-pixel unit SPX2 liquid
The inclination angle of brilliant molecule is different.Therefore, the first sub-pixel unit SPX1 can from the second sub-pixel unit SPX2 in brightness it is different.
That is, the first liquid crystal capacitor Clc1 voltage is filled with by suitably adjusting and the second liquid crystal capacitor Clc2 voltage is filled with
The image from side can be made as close possible to the image from front side.By that so, can improve according to the present invention
Illustrative embodiments LCD device side visibility.
The the first storage storage lines of line RL1 to the 3rd RL3 can be included by storing distribution RD (reference picture 11).First storage line
RL1 can be overlapping with the first pixel electrode PE1 at least a portion.Second storage line RL2 can be with the second pixel electrode
PE2 at least a portion is overlapping.In an illustrative embodiments, once-through type storage signal S can be provided to the first storage
It is each in the storage lines of line RL1 and second RL2.Storage signal S voltage level is not particularly limited, as long as being filled with the second liquid crystal
Voltage level in capacitor Clc2 is less than the voltage level being filled with the first liquid crystal capacitor Clc1.
First sub-pixel unit SPX1 may further include by making the first pixel electrode PE1 and first store line
The first storage Cst1 that RL1 is overlapping and sets.That is, the first storage Cst1 first electrode can be with
One pixel electrode PE1 connections, and the first storage Cst1 second electrode can with first storage line RL1 be connected.
Second sub-pixel unit SPX2 may further include by making the second pixel electrode PE2 and second store line
The second storage Cst2 that RL2 is overlapping and sets.That is, the second storage Cst2 first electrode can be with
Two pixel electrode PE2 connections, and the second storage Cst2 second electrode can with second storage line RL2 be connected.
3rd storage line RL3 can be connected by first node N1 with the 3rd switch element TR3 first electrode.In addition,
3rd storage line RL3 can be connected with both the first storage line RL1 and the second storage line RL2.Therefore, the 3rd storage line RL3 can
With from each reception storage signal S in the first storage line RL1 and the second storage line RL2.This configuration will be carried out with reference to Fig. 2
Describe in detail.
Fig. 1 is the first pixel cell of the configuration for showing LCD device according to an illustrative embodiment of the invention
Equivalent circuit diagram.Fig. 2 be have been explicitly shown figure 1 illustrates the first pixel cell plan.Fig. 3 is the line I- along Fig. 2
The sectional view of I ' interceptions.Fig. 4 is the sectional view along Fig. 2 line II-II ' interceptions.Fig. 5 is the line III-III ' and IV- along Fig. 2
The sectional view of IV ' interceptions.Fig. 6 is first grid polar curve, the first storage line and second for showing LCD device shown in figure 2
Store the schematic diagram of line.Fig. 7 is the schematic diagram for the data conductor for showing LCD device shown in figure 2.
Reference picture 2 to Fig. 7, LCD device according to an illustrative embodiment of the invention can include lower display panel 10,
Upper display panel 20 and the liquid crystal layer 30 being arranged between.Lower display panel 10 is arranged to display panel 20 upwardly.
In an illustrative embodiments, lower display panel 10 can be attached to upper display panel 20 by sealing.
For convenience of description, first switching element TR1 first electrode and second electrode respectively by the first source electrode SE1 and
First drain electrode DE1 is represented.Second switch element TR2 first electrode and second electrode is respectively by the second source electrode SE2 and
Two drain electrode DE2 are represented.3rd switch element TR3 first electrode and second electrode is respectively by the 3rd source electrode SE3 and the 3rd
Drain electrode DE3 is represented.
First, by the lower display panel 10 of description.
First grid polar curve GL1, first gate electrode GE1 store line RL1 and second to the 3rd gate electrode GE 3, first and stored
Line RL2 is arranged on infrabasal plate 110.In an illustrative embodiments, infrabasal plate 110 can be transparent glass substrate, thoroughly
Bright plastic base etc..
First grid polar curve GL1 can be arranged to extend on d1 in a first direction.First gate electrode GE1 is to the 3rd gate electrode
GE3 can be connected with first grid polar curve GL1.
In an illustrative embodiments, first grid polar curve GL1 and first gate electrode GE1 are into the 3rd gate electrode GE 3
Can each include single thin film, bilayer film or three-layer thin-film, the film includes a kind of, two or three of conducting metal,
The conducting metal includes aluminium (Al), copper (Cu), molybdenum (Mo), chromium (Cr), titanium (Ti), tungsten (W), molybdenum-tungsten (MoW), molybdenum-titanium (MoTi)
At least one of with copper/molybdenum-titanium (Cu/MoTi).
Reference picture 6, the first storage line RL1 and the second storage line RL2 can be arranged on infrabasal plate 110 (reference picture 3 to figure
5).That is, the first storage line RL1 and the second storage line RL2 can be arranged in and first grid polar curve GL1 and first gate electrode
On the layer identical layer that GE1 is disposed thereon to the 3rd gate electrode GE 3, and can be with first grid polar curve GL1 and first grid electricity
Pole GE1 insulate to the 3rd gate electrode GE 3.In an illustrative embodiments, the first storage line RL1 and the second storage line RL2
The material identical material with first grid polar curve GL1 and first gate electrode GE1 to the 3rd gate electrode GE 3 can be included.In addition,
In one illustrative embodiments, the first storage line RL1 and the second storage line RL2 can pass through identical mask process and first
Gate lines G L1 and first gate electrode GE1 is set simultaneously together to the 3rd gate electrode GE 3.
Based on Fig. 2, the first storage line RL1 can be arranged in above first grid polar curve GL1.That is, the first storage line RL1
At least a portion can be arranged to it is overlapping with the first pixel electrode PE1 then described.In an exemplary embodiment party
In formula, for example, the first storage line RL1 can have the square ring shape around the first pixel electrode PE1.However, the first storage
Line RL1 shape and size are not limited to shape and size shown in figure 2.
Based on Fig. 2, the second storage line RL2 can be arranged in below first grid polar curve GL1.Second storage line RL2 can be wrapped
The vertical component RL2b for including the horizontal component RL2a extended on d1 in a first direction and extending on second direction d2.Second storage
Line RL2 horizontal component RL2a can with the region of the one other pixel unit adjacent with the first pixel cell PX1
Store line connection.Second storage line RL2 vertical component RL2b at least a portion can be arranged to and the second sub-pixel electricity
Pole PE2 is overlapping.
In an illustrative embodiments, the second storage line RL2 vertical component RL2b can be arranged across the
Two pixel electrode PE2 center.More specifically, the second storage line RL2 vertical component RL2b can be on second direction d2
Extension is so as to overlapping with the second pixel electrode PE2 then described the second trunk portion PE2b.However, the second storage line
RL2 shape and size are not limited to shape and size shown in figure 2.
Gate insulating film 120 can be arranged in first grid polar curve GL1, first gate electrode GE1 to the 3rd gate electrode GE 3,
On one storage line RL1 and the second storage line RL2.In an illustrative embodiments, for example, gate insulating film 120 can be with
Including at least one in silicon nitride (SiNx) and silica (SiOx).Gate insulating film 120 can have multiple membrane structures, should
Membrane structure includes physical property at least two insulating barriers different from each other.
Semiconductor layer 130 can be arranged on gate insulating film 120.Semiconductor layer 130 can include first switching element
TR1 to the 3rd switch element TR3 channel region.In an illustrative embodiments, for example, semiconductor layer 130 can be wrapped
Include oxide semiconductor.That is, semiconductor layer 130 can include being selected from IGZO (In-Ga- zinc-oxide), ZnO, ZnO2、
CdO、SrO、SrO2、CaO、CaO2、MgO、MgO2、InO、In2O2、GaO、Ga2O、Ga2O3、SnO、SnO2、GeO、GeO2、PbO、
Pb2O3、Pb3O4、TiO、TiO2、Ti2O3And Ti3O5A kind of oxide semiconductor.In another illustrative embodiments, example
Such as, semiconductor layer 130 can include non-crystalline silicon or polysilicon.
Ohmic contact 140 can be arranged on semiconductor layer 130.In an illustrative embodiments, Ohmic contact
Layer 140 can include doped with high concentration p-type impurity (such as phosphorus) n+ amorphous silicon hydrides or silicide can be included.
In another illustrative embodiments, when semiconductor layer 130 includes oxide semiconductor, ohmic contact 140 can be saved.
In the description, the example that ohmic contact 140 is arranged on semiconductor layer 130 will be described.
Reference picture 7, data conductor DW can be arranged in gate insulating film 120 (reference picture 3 to Fig. 5) and ohmic contact
In 140 (reference pictures 3 to Fig. 5).In an illustrative embodiments, it is thin that data conductor DW can include single thin film, bilayer
Film or three-layer thin-film, the film include a kind of, two or three of conducting metal, and the conducting metal includes aluminium (Al), copper (Cu), molybdenum
(Mo), at least one in chromium (Cr), titanium (Ti), tungsten (W), molybdenum-tungsten (MoW), molybdenum-titanium (MoTi) and copper/molybdenum-titanium (Cu/MoTi)
Kind.However, the invention is not restricted to this, and data conductor DW can include various metals or conductor.
In an illustrative embodiments, data conductor DW can pass through identical mask process and semiconductor layer 130
Set simultaneously together with ohmic contact 140.In this case, data conductor DW can have the shape with semiconductor layer 130
Same shape, except channel regions of the first switching element TR1 to the 3rd switch element TR3 in semiconductor layer 130 it
Outside.First switching element TR1 to the 3rd switch element TR3 channel region will then be described.
Data conductor DW can include the first data wire DL1, the second data wire DL2, the first source electrode SE1, the first electric leakage
Pole DE1, the second source electrode SE2, the second drain electrode DE2, the 3rd source electrode SE3 and the 3rd drain electrode DE3.
First source electrode SE1, the first drain electrode DE1 and first gate electrode GE1 provide first switching element TR1.First opens
Closing element TR1 the first source electrode SE1 can be connected with the first data wire DL1.First switching element TR1 the first drain electrode
DE1 can be connected by the first contact hole CNT1 with the first pixel electrode PE1.First switching element TR1 the first source electrode
SE1 can be arranged in identical layer and above be spaced apart preset distance with first switching element TR1 the first drain electrode DE1.The
One switch element TR1 channel region can be limited to according to the first grid signal G1 provided by first gate electrode GE1
Between one source electrode SE1 and the first drain electrode DE1.
Second source electrode SE2, the second drain electrode DE2 and the second gate electrode GE2 provide second switch element TR2.Second opens
Closing element TR2 the second source electrode SE2 can be connected with the first data wire DL1.Second switch element TR2 the second drain electrode
DE2 can be connected by the second contact hole CNT2 with the second pixel electrode PE2.Second switch element TR2 the second source electrode
SE2 can be arranged in identical layer and above be spaced apart preset distance with second switch element TR2 the second drain electrode DE2.The
Two switch element TR2 channel region can be limited to according to by the second gate electrode GE2 first grid signal G1 provided
Between two source electrode SE2 and the second drain electrode DE2.
Second switch element TR2, which may further include, to be extended from the second drain electrode DE2 and with the second storage line RL2's
Drain electrode extension DEP1 overlapping horizontal component RL2a.The storage lines of drain electrode extension DEP1 and second RL2 horizontal component
RL2a is overlapping, so as to add the second storage Cst2 capacitive component.In addition, leaping voltage can pass through second switch
Parasitic component between the second gate electrode GE2 and the second drain electrode DE2 in element TR2 is reduced.
3rd source electrode SE3, the 3rd drain electrode DE3 and the 3rd gate electrode GE 3 provide the 3rd switch element TR3.3rd opens
Closing element TR3 the 3rd source electrode SE3 can be connected with both the first storage line RL1 and the second storage line RL2.That is, the
Three switch element TR3 the 3rd source electrode SE3 can have the configuration identical with the above-mentioned 3rd storage line RL3 to configure.Therefore,
Three storage line RL3 are arranged on the layer different with the second layers for being disposed thereon of storage line RL2 from the first storage line RL1.Under
Wen Zhong, in some cases, the 3rd storage line RL3 and the 3rd switch element TR3 the 3rd source electrode SE3 will each other interchangeably
Use.
More specifically, the 3rd switch element TR3 the 3rd source electrode SE3 can be deposited by the 3rd contact hole CNT3 with first
Storage line RL1 connections.In addition, the 3rd switch element TR3 the 3rd source electrode SE3 can be deposited by the 4th contact hole CNT4 with second
Storage line RL2 connections.Therefore, the 3rd switch element TR3 the 3rd source electrode SE3 can be with the first all storage line RL1, second
Store line RL2 and first grid polar curve GL1 overlapping.
3rd switch element TR3 the 3rd drain electrode DE3 can be connected with the second pixel electrode PE2.That is, the 3rd
Switch element TR3 will be provided to the second sub-pixel electricity from the first storage line RL1 and the second storage line RL2 the storage signal S received
Pole PE2, so as to divide the voltage being filled with the second liquid crystal capacitor Clc2.
Therefore, the 3rd switch element TR3 the 3rd source electrode SE3 can be connect by the 3rd contact hole CNT3 and the 4th respectively
Contact hole CNT4 is connected with both the first storage line RL1 and the second storage line RL2.Therefore, it is fully disposed on first direction d1
The first all storage line RL1 and the second storage line RL2 horizontal component RL2a, and be fully disposed on second direction d2
The storage lines of 3rd switch element TR3 the 3rd source electrode SE3 and second RL2 vertical component RL2b is in the first sub-pixel unit
Connected in PX1 region with network structure.By so, it is possible to reduce provide the first storage line RL1 to the 3rd of storage signal
Line RL3 resistive component is stored, also, accordingly it is possible to prevent is provided to the 3rd switch element TR3 the 3rd source electrode SE3's
Store signal S current-resistance (" IR ") drop phenomenon.
First storage line RL1 and the second storage line RL2 insulate with the blocking electrode 180 then described.Therefore, the first storage
The storage lines of line RL1 and second RL2 can carry out voltage driving independently of blocking electrode 180.In addition, the first all storage lines
RL1, the second storage line RL2 and the 3rd switch element TR3 the 3rd source electrode SE3 include metal, so as to reduce resistive component.
In addition, the first all storage line RL1, the second storage line RL2 and the 3rd switch element TR3 the 3rd source electrode SE3 are connected
Network structure is formed, so as to reduce storage signal S ripple component.
3rd switch element TR3, which may further include, to be arranged between the 3rd source electrode SE3 and the 3rd drain electrode DE3
Floating electrode FE.That is, in an illustrative embodiments, for example, the 3rd switch element TR3 can be a relaxation crystal
Pipe.
First passivating film 150 can be arranged on data conductor DW and gate insulating film 120.In an exemplary embodiment party
In formula, the first passivating film 150 may include the inorganic insulating material of such as silicon nitride or silica.First passivating film 150 can be to prevent
The paint flow of the organic insulating film 160 only then described is into the expose portion of semiconductor layer 130.
Organic insulating film 160 can be arranged on the first passivating film 150.Organic insulating film 160 has excellent planarization
Characteristic, and the organic material with light sensitivity can be included.In another illustrative embodiments, organic insulating film 160
It can also be omitted.
Although not shown in the accompanying drawings, colour filter can be arranged on the first passivating film 150.That is, colour filter can
To be arranged between the first passivating film 150 and organic insulating film 160.In an illustrative embodiments, colour filter can show
Show one of three primary colors, such as red R, green G and blueness B, but the invention is not restricted to this.Colour filter can include showing each phase
The material of the different colors of adjacent pixel.Colour filter can also be arranged on the upper display panel 20 then described.
Second passivating film 170 can be arranged on organic insulating film 160.In an illustrative embodiments, second is blunt
Changing film 170 may include the inorganic insulating material of such as silicon nitride or silica.Second passivating film 170 can prevent organic insulating film
160 upper part is lifted up, and can prevent the organic material (such as solvent) due to being flowed into from organic insulating film 160
Caused by liquid crystal layer 30 pollution, so as to prevent drive screen when may caused by lingering after-image failure.
First pixel electrode PE1 and the second pixel electrode PE2 can be arranged on the second passivating film 170.First son
Pixel electrode PE1 can be connected with first switch electrode TR1 the first drain electrode DE1, and the first drain electrode DE1 passes through the first contact
Hole CNT1 exposes.Second pixel electrode PE2 can be connected with second switch electrode TR2 the second drain electrode DE2, the second electric leakage
Pole DE2 is exposed by the second contact hole CNT2.In an illustrative embodiments, of the first pixel electrode PE1 and second
Pixel electrode PE2 can include transparent conductive material, such as tin indium oxide (" ITO ") or indium zinc oxide (" IZO "), or can be with
Including reflective metals, such as aluminium, silver, chromium or their alloy.
The first trunk portion PE1a that first pixel electrode PE1 can include extending on d1 in a first direction, second
The second trunk portion PE1b for extending on the d2 of direction and prolong respectively from the first trunk portion PE1a and the second trunk portion PE1b
The multiple component PE1c stretched.In addition, multiple first slit SLT1 can be limited between multiple component PE1c
In one pixel electrode PE1.Second pixel electrode PE2 can include the first trunk portion extended on d1 in a first direction
PE2a, the second trunk portion PE2b extended on second direction d2 and respectively from the first trunk portion PE2a and second lead
Multiple component PE2c of stem portion PE2b extensions.In addition, multiple second slit SLT2 can be in multiple component PE2c
Between be limited in the second pixel electrode PE2.
For example, in an illustrative embodiments, the first pixel electrode PE1 situation will be described.First sub-pixel
Side between common electrode CE and the first pixel electrode PE1 that electrode PE1 multiple first slit SLT1 generations are then described
Edge, to allow multiple liquid crystal molecules 31 to rotate in a predetermined direction.Blocking electrode 180 can be arranged in the second passivating film 170
On.The pixel electrode PE1 of blocking electrode 180 and first and the second pixel electrode PE2 can be arranged on identical layer.Resistance
Gear electrode 180 can be arranged to and include the first data wire DL1 and the second data wire DL2 multiple data line overlaps.Therefore,
Blocking electrode 180 can prevent that the coupling by multiple data wires and the multiple pixel electrodes for being adjacent to each data wire from being drawn
The light leakage phenomenon risen.
In an illustrative embodiments, blocking electrode 180 may include transparent conductive material, such as ITO or IZO, or
Person can include reflective metals, such as aluminium, silver, chromium or their alloy.In an illustrative embodiments, blocking electrode
180 can be connected to receive shared voltage with the common electrode CE outside the first pixel cell PX1.
First floating electrode 180a and the second floating electrode 180b can be arranged on the second passivating film 170, to be arranged in
On the layer identical layer being disposed thereon with blocking electrode 180.First floating electrode 180a can be configured to covering the 3rd and connect
Contact hole CNT3.Second floating electrode 180b can be configured to cover the 4th contact hole CNT4.
More specifically, the first floating electrode 180a can be by the first storage line RL1 and the 3rd switch element TR3 the 3rd source
Electrode SE3 connections.In addition, the second floating electrode 180b can be by the second storage line RL2 and the 3rd switch element TR3 the 3rd source
Electrode SE3 connections.That is, the first floating electrode 180a is used as the first storage line RL1 and the 3rd switch element TR3 the 3rd source
Bridge electrode between electrode SE3.In addition, the second floating electrode 180b is used as the second storage line RL2's and the 3rd switch element TR3
Bridge electrode between 3rd source electrode SE3.
First floating electrode 180a and the second floating electrode 180b can respectively be arranged in identical layer on stop electricity
The pixel electrode PE1 of pole 180 and first and the second pixel electrode PE2 insulation.
First floating electrode 180a can be by the 3rd contact hole CNT3 by the first storage line RL1 and the 3rd switch element
TR3 the 3rd source electrode SE3 connections.Second floating electrode 180b can be by the 4th contact hole CNT4 by the second storage line RL2
It is connected with the 3rd switch element TR3 the 3rd source electrode SE3.In an illustrative embodiments, the first floating electrode 180a
It can include transparent conductive material, such as ITO or IZO with the second floating electrode 180b, or reflective metals can be included, such as
Aluminium, silver, chromium or their alloy.
Although not shown in the accompanying drawings, the first alignment film can be arranged in the first pixel electrode PE1, the second sub-pixel
On electrode PE2, the floating electrode 180a of blocking electrode 180 and first and the second floating electrode 180b.In an exemplary implementation
In mode, the first alignment film can include polyimides.
Then, by the upper display panel 20 of description.
Upper display panel 20 can be arranged to display panel 10 downwards.Upper display panel 20 can include clear glass
Or transparent plastic.In an illustrative embodiments, upper display panel 20 can include the material phase with lower display panel 10
Same material.
For stopping that the black matrix BM in region of the light transmission extremely in addition to pixel region can be arranged in upper substrate 190.
In an illustrative embodiments, black matrix BM can include the metal material comprising organic matter or chromium.
Protective layer 200 can be arranged on upper substrate 190 and black matrix BM.Protective layer 200 can include insulating materials.
Protective layer 200 can be saved under certain situation.
Common electrode CE may be arranged on protective layer 200.Common electrode CE at least a portion can be arranged to and the
One pixel electrode PE1 and the second pixel electrode PE2 are overlapping.Common electrode CE can together with the first pixel electrode PE1 and
Electric field is each generated together in second pixel electrode PE2.Multiple liquid crystal molecules 31 can be according to the electric field orientation of generation.
However, as described above, because the level for being filled with the second liquid crystal capacitor Clc2 voltage, which is less than, is filled with the first liquid crystal
The level of capacitor Clc1 voltage, so multiple liquid crystal point between the second pixel electrode PE2 and common electrode CE
The orientation state of son and the orientation state of multiple liquid crystal molecules between the first pixel electrode PE1 and common electrode CE are not
Together.
Although not shown in the accompanying drawings, the second alignment film (not shown) can be arranged on common electrode CE.Second matches somebody with somebody
It can include polyimides to film.
Fig. 8 be show figure 1 illustrates the first pixel cell and the second pixel cell for being attached thereto it is equivalent
Circuit diagram.However, the content of repetition described in the first pixel cell PX1 will not be repeated.
Reference picture 8, LCD device according to an illustrative embodiment of the invention, which may further include, is adjacent to the first picture
Plain unit PX1 the second pixel cell PX2.Second pixel cell PX2 can include of the 3rd sub-pixel unit SPX3 and the 4th
Pixel cell SPX4.
3rd sub-pixel unit SPX3 can be opened including being connected to second gate line GL2 and the 4th of the first data wire DL1 the
Close element TR4, and the 3rd pixel electrode PE3 being connected with the 4th switch element TR4.3rd pixel electrode PE3 is extremely
A few part can be overlapping with the 4th storage line RL4.
4th sub-pixel unit SPX4 can be opened including being connected to second gate line GL2 and the 5th of the first data wire DL1 the
Close element TR5, and the 4th pixel electrode PE4 being connected with the 5th switch element TR5.4th sub-pixel unit SPX4 can be with
Further comprise the 6th switch element TR6 being connected with second gate line, the storages of the 4th pixel electrode PE4 and the 6th line RL6.
5th switch element TR5 can be connected to the 4th storage line RL4 via Section Point N2.
4th pixel electrode PE4 at least a portion can be overlapping with the 5th storage line RL5.In addition, the 6th storage line
RL6 can be connected with both the 4th storage line RL4 and the 5th storage line RL5.In addition, the 4th storage line RL4 can be deposited with second
Storage line RL2 vertical component RL2b connections.
That is, the second pixel cell PX2 can be adjacent to the first pixel cell PX1 arrangements.In the description, state
" two configurations disposed adjacent one another " mean to be not arranged between the two configurations with the two configuration identical configurations.
Hereinafter, this configuration is more fully described in reference picture 9.
Fig. 9 be have been explicitly shown figure 8 illustrates the first pixel cell and the second pixel cell plan.However,
The content of repetition described in the first pixel cell PX1 will not be repeated.Hereinafter, it will be described in the 4th storage
Line RL4, the 5th storage line RL5, the 6th storage line RL6 and the 6th switch element TR6.
4th storage line RL4 can have the square ring shape around the 3rd pixel electrode PE3.3rd pixel electrode
PE3 can include the first trunk portion PE3a extended on d1 in a first direction, the second trunk extended on second direction d2
The part PE3b and multiple component PE3c extended respectively from the first trunk portion PE3a and the second trunk portion PE3b.
3rd pixel electrode PE3 can be connected to the 4th switch element TR4 by the 5th contact hole CNT5.4th storage line RL4 can
It is connected with the vertical component RL2b with the second storage line RL2.5th storage line RL5 can include what is extended on d1 in a first direction
The horizontal component RL5a and vertical component RL5b extended on second direction d2.5th storage line RL5 vertical component RL5b can
It is overlapping with the 4th pixel electrode PE4 to be arranged to, also, in an illustrative embodiments, horizontal stroke can be arranged to
Wear the 4th pixel electrode PE4 center.4th storage line RL4 and the 5th storage line RL5 can be arranged in and the first storage line
On RL1, the second storage line RL2 and first grid polar curve GL1 identicals layer.
6th storage line RL6 can have the 6th source electrode SE6 identicals with the 6th switch element TR6 to configure.Because the
Six switch element TR6 the 6th source electrode SE6 be arranged in on the first data wire DL1 identicals layer, so the 6th storage line RL6
It is arranged on the layer different from the layer that the 4th storage line RL4 and the 5th storage line RL5 are disposed thereon.Hereinafter, at some
In the case of, the 6th storage line RL6 and the 6th switch element TR6 the 6th source electrode SE6 will be interchangeably used each other.
6th switch element TR6 the 6th source electrode SE6 can be connected by the storage lines of the 7th contact hole CNT7 and the 5th RL5
Connect.In addition, the 6th switch element TR6 the 6th source electrode SE6 can be connected by the storage lines of the 8th contact hole CNT8 and the 5th RL5
Connect.Therefore, the 6th switch element TR6 the 6th source electrode SE6 can be with the 4th all storage line RL4, the 5th storage line RL5
It is overlapping with second gate line GL2.
6th switch element TR6 the 6th drain electrode DE6 can be connected with the 4th pixel electrode PE4.That is, the 6th
Switch element TR6 will be provided to the 4th sub-pixel electricity from the 4th storage line RL4 and the 5th storage line RL5 the storage signal S received
Pole PE4, so as to divide the voltage being filled with the 4th liquid crystal capacitor Clc4.6th switch element TR6 may further include from
The drain electrode extension DEP2 of 6th drain electrode DE6 extensions.
Therefore, the 6th switch element TR6 the 6th source electrode SE6 can be connect by the 7th contact hole CNT7 and the 8th respectively
Contact hole CNT8 is connected with both the 4th storage line RL4 and the 5th storage line RL5.3rd floating electrode 180c and the 4th floating electrode
180d can be covered each by the 7th contact hole CNT7 and the 8th contact hole CNT8.
Because the second storage line RL2 vertical component RL2b is connected with the 4th storage line RL4, it is located at the first pixel list
The the first all storage storages of line RL1 to the 6th line RL6 in first PX1 and the second pixel cell PX2 region are connected to each other.Just
It is to say, for example, the first storage line RL1 to the 6th storage line RL6 are connected to each other while network structure is formed.By so,
The resistive component for the first storage storage lines of line RL1 to the 6th RL6 that storage signal S is provided can be reduced, also, be therefore, it can
Prevent from providing to the 3rd switch element TR3 the 3rd source electrode SE3 storage signal S IR and drop phenomenon.
5th switch element TR5 can be connected to the 4th pixel electrode PE4 by the 6th contact hole CNT6.
6th switch element TR6, which may further include, to be arranged between the 6th source electrode SE6 and the 6th drain electrode DE6
Floating electrode FEa.That is, for example, in an illustrative embodiments, the 6th switch element TR6 can be a relaxation crystalline substance
Body pipe.
Figure 10 is the first pixel of the configuration for the LCD device for showing another illustrative embodiments according to the present invention
The equivalent circuit diagram of unit, the 3rd pixel cell and the 4th pixel cell.However, will not repeat to retouch referring to figs. 1 to Fig. 9
The content for the repetition stated.In addition, in Fig. 10, the second pixel cell PX2 will not be used to avoid and have been described above in Fig. 9
Second pixel cell PX2 obscures.
Reference picture 10, can include the first pixel list according to the LCD device of another illustrative embodiments of the present invention
First PX1, the 3rd pixel cell PX3 and the 4th pixel cell PX4.It will not repeat referring to figs. 1 to Fig. 9 in the first pixel list
The content of repetition described in first PX1.
In an illustrative embodiments, for example, the first pixel cell PX1 can show blue color.In an example
In property embodiment, for example, the 3rd pixel cell PX3 and the 4th pixel cell PX4 can be shown in red color and green color
A kind of color.Hereinafter, for example, the 3rd pixel cell PX3 of description is shown into red color and the 4th pixel cell PX4 are shown
Green color.
3rd pixel cell PX3 can include the 6th sub-pixel unit SPX6 with the 9th switch element TR9.9th opens
Closing element TR9 can be connected with first grid polar curve GL1, the 6th pixel electrode PE6 and the second storage line RL2.4th pixel list
First PX4 can include the 8th sub-pixel unit SPX8 with the 12nd switch element TR12.12nd switch element TR12 can
To be connected with first grid polar curve GL1, the 8th pixel electrode PE8 and the second storage line RL2.Hereinafter, will typically it retouch
State the 9th switch element TR9.
9th switch element TR9 can be connected with the only one in the first storage line RL1 and the second storage line RL2.Saying
In bright book, for example, the 9th switch element TR9 of description is connected with the second storage line RL2.That is, the 9th switch element TR9 is not
It is connected with the first storage line RL1.
Therefore, only show blue color the first pixel cell PX1 the 3rd switch element TR3 with first store line RL1 and
Both second storage line RL2 connections, and show the 3rd picture of the colors different from the color shown by the first pixel cell PX1
Plain unit PX3 and the 4th pixel cell PX4 the 9th switch element TR9 and the 12nd switch element TR12 do not store line with first
RL1 connections.
In an illustrative embodiments, the 5th sub-pixel unit SPX5 includes the 7th switch element TR7, the 5th liquid crystal
Capacitor Clc5, the 5th storage Cst5 and the 5th pixel electrode PE5, sub-pixel unit SPX6 include the 8th switch element
TR8, liquid crystal capacitor Clc6 and storage Cst6, sub-pixel unit SPX7 can include TR10, the 7th pixel electrode
PE7, the 7th liquid crystal capacitor Clc7 and the 7th storage Cst7, and sub-pixel unit SPX8 can open including the 11st
Close element TR11, the 8th liquid crystal capacitor Clc8 and the 8th storage Cst8.
Figure 11 is the signal of the storage distribution for the configuration for showing LCD device according to an illustrative embodiment of the invention
Figure.
Storage distribution RD as described above is arranged in viewing area 100 have network structure.Storing distribution RD can
To receive storage signal S by the multiple data integrated circuits being externally arranged in region 410 (" IC ") 300.Show in fig. 11
The quantity for going out data integrated circuit 300 is four.However, the present invention is not limited thereto.
That is, in LCD device according to an illustrative embodiment of the invention because storage distribution RD have it is netted
Structure, it is possible to reduce resistive component, to prevent the voltage drop for storing signal S.
First storage signal applies the storage signals of line RDL1 and second and applies the second direction that line RDL2 can be in fig. 11
Extend on d2, and the two ends of d1 in a first direction can be arranged to be connected with storage distribution RD.Here, the first storage signal
Apply the thickness that each thickness in the storage signal application lines of line RDL1 and second RDL2 is more than storage distribution RD.
Figure 12 is to show the feedback circuit unit in the configuration of LCD device according to an illustrative embodiment of the invention
Schematic diagram.
Reference picture 12, LCD device according to an illustrative embodiment of the invention may further include the 3rd storage letter
Number apply line RDL3a and RDL3b.
In an illustrative embodiments, the 3rd storage signal applies line RDL3a and RDL3b and prolonged in a first direction on d1
Stretch so that the distribution with the center positioned at viewing area 100 in storage distribution RD is connected.Figure 12 illustrates set two
3rd storage signal applies line RDL3a and RDL3b, but the invention is not restricted to this.That is, it is possible to set one the 3rd storage letter
Number apply line, and can also set it is multiple three storage signals apply lines.Hereinafter, for example, description is set into two the
Three storage signals apply line RDL3a and RDL3b.
Two the 3rd storage signals apply line RDL3a and RDL3b can respectively with two feedback circuit unit 300a and
300b connections.More specifically, feedback circuit unit 300a detections apply the storage of line RDL3a one end from the 3rd storage signal
Signal S, above-mentioned its one end be in its two ends close to viewing area 100 center one end, and compensate the storage that detects
Signal S ripple.Then, feedback circuit unit 300a, which provides compensated storage signal S to the 3rd storage signal, applies line
RDL3a the second end.
Similarly, feedback circuit unit 300b detections apply depositing for line RDL3b one end from the 3rd storage signal
Store up signal S, above-mentioned its one end be in its two ends close to viewing area 100 center one end, and compensate detect deposit
Store up signal S ripple.Then, compensated storage signal S is provided to the 3rd storage signal and applied by feedback circuit unit 300b
Line RDL3b the second end.
Therefore, being removed the storage signal S of ripple component can be provided to by compensating storage signal S ripple component
The pixel cell being connected with storage distribution RD.
The quantity of feedback circuit unit can be according to the method for forming the 3rd storage signal application line RDL3a and RDL3b
Change.In addition, feedback circuit unit 300a and 300b physical circuit configuration are not particularly limited, as long as input letter can be removed
Number ripple component.
Figure 13 is the first pixel of the configuration for the LCD device for showing another illustrative embodiments according to the present invention
The equivalent circuit diagram of unit.Figure 14 be have been explicitly shown figure 13 illustrates the first pixel cell plan.Figure 15 is edge
The sectional view of Figure 14 line V-V ' interceptions.Figure 16 is the sectional view along Figure 14 line VI-VI ' interceptions.For convenience of description, in figure
1 reference number used into Fig. 9 will be used in the same fashion, and will not repeat what is described referring to figs. 1 to Fig. 9
The content repeated.
Reference picture 13 can include first to Figure 16 according to the LCD device of another illustrative embodiments of the present invention
Pixel cell PX1 and the second pixel cell PX2 (reference picture 8).
First pixel cell PX1 can include the first sub-pixel unit SPX1 and the second sub-pixel unit SPX2.
First sub-pixel unit SPX1 can include first switching element TR1, the first liquid crystal capacitor Clc1, the first storage
Capacitor Cst1 and the first pixel electrode PE1.First switching element TR1 is according to the first grid received from first grid polar curve GL1
Pole signal G1 turns on to provide to the first pixel electrode PE1 from the first data wire DL1 the first data-signal D1 received.
First liquid crystal capacitor Clc1 be filled with provide to the first pixel electrode PE1 voltage and provide to common electrode CE voltage it
Between voltage difference.
Second sub-pixel unit SPX2 can include second switch element TR2, the 3rd switch element TR3, the second liquid crystal electricity
Container Clc2, the second storage Cst2 and the second pixel electrode PE2.
Second switch element TR2 is turned on so as to will be from the according to the first grid signal G1 received from first grid polar curve GL1
The first data-signal D1 that one data wire DL1 is received applies to the second pixel electrode PE2.
3rd switch element TR3 can connect with first grid polar curve GL1, the 3rd storage line RL3 and the second pixel electrode PE2
Connect.3rd switch element TR3 turns on to store from the 3rd according to the first grid signal G1 received from first grid polar curve GL1
The storage signal S that line RL3 is received applies to the second pixel electrode PE2.
Therefore, the second liquid crystal capacitor Clc2, which is filled with, provides to the second pixel electrode PE2 voltage and provides to shared
Voltage difference between electrode CE voltage, but the voltage being filled with is divided when the 3rd switch element TR3 is turned on.Therefore, fill
The level for entering the voltage in the second liquid crystal capacitor Clc2 is less than the level for the voltage being filled with the first liquid crystal capacitor Clc1.
That is, in the first pixel cell PX1 because the level for the voltage being filled with the first liquid crystal capacitor Clc1 with
The level of the voltage being filled with the second liquid crystal capacitor Clc2 is different, so the first sub-pixel unit SPX1 liquid crystal molecule inclines
Angle is different from the inclination angle of the second sub-pixel unit SPX2 liquid crystal molecule.Therefore, the first sub-pixel unit SPX1 can be with second
Sub-pixel unit SPX2 is different in brightness.
The the first storage storage lines of line RL1 to the 3rd RL3 can be included by storing distribution RD (reference picture 11).First storage line
RL1 at least a portion can be overlapping with the first pixel electrode PE1.Second storage line RL2 at least a portion can be with the
Two pixel electrode PE2 are overlapping.Second storage line RL2 can include the horizontal component RL2a extended on d1 in a first direction and
The vertical component RL2b extended on second direction d2.
3rd storage line RL3 can be connected by first node N1 with the 3rd switch element TR3 first electrode.In addition,
3rd storage line RL3 is connected with one in the first storage line RL1 and the second storage line RL2.Therefore, the 3rd storage line RL3 with
A remaining insulation in first storage line RL1 and the second storage line RL2.In an illustrative embodiments, the 3rd
When storage line RL3 is connected with the second storage line RL2, the 3rd storage line RL3 and the first storage line RL1 insulate.In the description, lift
Example explanation the 3rd stores line RL3 and is connected with the second storage line RL2, and is insulated with the first storage line RL1.
3rd storage line RL3 can be arranged in and each different layer in the first storage line RL1 and the second storage line RL2
On.Can each be arranged in and first grid polar curve in reference picture 15 and Figure 16, the first storage line RL1 and the second storage line RL2
On the layer identical layer that GL1 is disposed thereon.In addition, the 3rd storage line RL3 can be arranged in and is arranged in the first data wire DL1
On layer identical layer thereon.
3rd storage line RL3 can have the 3rd source electrode SE3 identicals with the 3rd switch element TR3 to configure.Below
In, in some cases, the 3rd storage line RL3 and the 3rd switch element TR3 the 3rd source electrode SE3 will interchangeably make each other
With.
The 3rd switch element TR3 will be described in further detail.3rd switch element TR3 the 3rd source electrode SE3 can pass through
3rd contact hole CNT3 is connected with the second storage line RL2.Connect more specifically, the first floating electrode 180a is arranged to covering the 3rd
Contact hole CNT3, so as to which the second storage line RL2 is connected with the 3rd switch element TR3 the 3rd source electrode SE3.
In addition, the 3rd switch element TR3 the 3rd source electrode SE3 can be with the first pixel electrode PE1 and the second sub- picture
Both plain electrode PE2 are overlapping.In an illustrative embodiments, the 3rd switch element TR3 the 3rd source electrode SE3 can be
Extend on second direction d2 in the center to cross the first pixel electrode PE1 and the second pixel electrode PE2 center
Each.3rd switch element TR3 the 3rd source electrode SE3 extend on second direction d2 so as to positioned at being adjacent to the first grid
The source electrode connection of switch element in the pixel cell region of polar curve GL1 second gate line GL2 connections.This will then be described
Individual configuration.
That is, in the LCD device of another illustrative embodiments according to the present invention, the 3rd storage line, i.e. the
Three switch element TR3 the 3rd source electrode SE3 is extended to and the first pixel electrode PE1 and the second pixel electrode PE2 in itself
In it is each overlapping.In addition, the 3rd switch element TR3 the 3rd source electrode SE3 can be with the first storage line RL1 and the second storage
Any one connection in line RL2.In an illustrative embodiments, the 3rd switch element TR3 the 3rd source electrode SE3 can
To extend to the second stem portion with the first pixel electrode PE1 the second trunk portion PE1b and the second pixel electrode PE2
Divide each overlapping in PE2b.Therefore, extend in a first direction on d1 first storage line RL1 and second storage line RL2 with
The 3rd extended on second direction d2 stores line RL3 connections to form network structure.Therefore, the first storage line RL1 to the 3rd is deposited
Storage line RL3 resistive component is reduced, and phenomenon is dropped to prevent from providing to the 3rd switch element TR3 storage signal S IR.By reference
Figure 17 and Figure 18 describe the relation between adjacent pixel cell.
Figure 17 be show figure 13 illustrates the first pixel cell and second pixel adjacent with the first pixel cell
The equivalent circuit diagram of unit.Figure 18 be have been explicitly shown figure 17 illustrates the first pixel cell and the second pixel cell it is flat
Face figure.However, content referring to figs. 1 to Figure 10 and Figure 13 to Figure 16 repetitions described will not be repeated.
According to the present invention another illustrative embodiments LCD device can include the first pixel cell PX1 and with
The second adjacent pixel cell PX2.Second pixel cell PX2 can include the 3rd sub-pixel unit SPX3 and the 4th sub-pixel
Cell S PX4.
3rd sub-pixel unit SPX3 can include the 4th switch element TR4, the 3rd liquid crystal capacitor Clc3, the 3rd storage
Capacitor Cst3 and the 3rd pixel electrode PE3.
4th switch element TR4 the 4th source electrode SE4 can be connected with the second data wire DL2, and the 4th switch member
Part TR4 the 4th drain electrode DE4 can be connected with the 3rd pixel electrode PE3.In addition, the 4th switch element TR4 the 4th grid
Electrode GE4 can be connected with second gate line GL2.Therefore, the 4th switch element TR4 from second gate line GL2 according to receiving
Second grid signal G2 turns on from the second data wire DL2 the second data-signal D2 received to apply to the 3rd pixel electrode
PE3。
3rd liquid crystal capacitor Clc3, which is filled with, to be provided to the 3rd pixel electrode PE3 voltage and provides to common electrode CE
Voltage between voltage difference.In addition, the 3rd pixel electrode PE3 at least a portion can be overlapping with the 4th storage line RL4.
Therefore, the 3rd sub-pixel unit SPX3 can include being arranged in the between the storages of the 3rd pixel electrode PE3 and the 4th line RL4
Three storages.
In an illustrative embodiments, the 4th storage line RL4 can be configured to surround the 3rd pixel electrode PE3
Periphery.In addition, the 4th storage line RL4 can be connected with the second storage line RL2 vertical component RL2b.
4th sub-pixel unit SPX4 can include the 5th switch element TR5, the 6th switch element TR6, the 4th liquid crystal electricity
Container Clc4, the 4th storage Cst4 and the 4th pixel electrode PE4.
5th switch element TR5 the 5th source electrode SE5 can be connected with the second data wire DL2, and the 5th switch member
Part TR5 the 5th drain electrode DE5 can be connected with the 4th pixel electrode PE4.In addition, the 5th switch element TR5 the 5th grid
Electrode GE5 can be connected with second gate line GL2.Therefore, the 5th switch element TR5 from second gate line GL2 according to receiving
Second grid signal G2 turns on from the second data wire DL2 the second data-signal D2 received to apply to the 4th pixel electrode
PE4。
6th switch element TR6 the 6th source electrode SE6 can be connected with the 6th storage line RL6, and the 6th switch member
Part TR6 the 6th drain electrode DE6 can be connected with the 4th pixel electrode PE4.In addition, the 6th switch element TR6 the 6th grid
Electrode GE6 can be connected with second gate line GL2.Therefore, the 6th switch element TR6 from second gate line GL2 according to receiving
Second grid signal G2 turns on from the 6th storage line RL6 storage signal S received to apply to the 4th pixel electrode PE4.
Therefore, the 4th liquid crystal capacitor Clc4, which is filled with, provides to the 4th pixel electrode PE4 voltage and is filled with shared electricity
Voltage difference between pole CE voltage, but the voltage being filled with the 4th liquid crystal capacitor Clc4 is led in the 6th switch element TR6
It is divided when logical.Therefore, the level for the voltage being filled with the 4th liquid crystal capacitor Clc4, which is less than, is filled with the 3rd liquid crystal capacitor
The level of voltage in Clc3.
5th storage line RL5 can include the horizontal component RL5a extended on d1 in a first direction and on second direction d2
The vertical component RL5b of extension.5th storage line RL5 vertical component RL5b can be arranged to and the 4th pixel electrode PE4
It is overlapping.4th storage line RL4 and the 5th storage line RL5 can be arranged in and the first storage line RL1, the second storage line RL2 and the
On the layer identical layer that one gate lines G L1 is disposed thereon.
In an illustrative embodiments, the 6th storage line RL6 can be configured to be based on second direction d2 and the 3rd
Store line RL3 symmetrical.
6th storage line RL6 can have the 6th source electrode SE6 identicals with the 6th switch element TR6 to configure.6th opens
The 6th source electrode SE6 for closing element TR6 is arranged in the layer phase being disposed thereon with the first data wire DL1 and the second data wire DL2
With layer on, and therefore the 6th storage line RL6 can be arranged in the 4th storage line RL4 and the 5th storage line RL5 be arranged in
On the different layer of layer thereon.Hereinafter, in some cases, the 6th of the 6th storage line RL6 and the 6th switch element TR6
Source electrode SE6 will be interchangeably used each other.
The 6th switch element TR6 will be described in further detail.6th switch element TR6 the 6th source electrode SE6 can pass through
6th contact hole CNT6 is connected with the 5th storage line RL5.Connect more specifically, the second floating electrode 180b is arranged to covering the 6th
Contact hole CNT6, so as to which the 5th storage line RL5 is connected with the 6th switch element TR6 the 6th source electrode SE6.
In addition, the 6th switch element TR6 the 6th source electrode SE6 can be with the 3rd pixel electrode PE3 and the 4th sub- picture
Both plain electrode PE4 are overlapping.In an illustrative embodiments, the 6th switch element TR6 the 6th source electrode SE6 can be
Extend to cross in the 3rd pixel electrode PE3 center and the 4th pixel electrode PE4 center on second direction d2
Each.
That is, in the LCD device of another illustrative embodiments according to the present invention, the 3rd storage line, i.e. the
Three switch element TR3 the 3rd source electrode SE3 extends to the first sub-pixel electricity in the region with the first pixel cell PX1 in itself
It is each overlapping in pole PE1 and the second pixel electrode PE2.In addition, the 6th storage line, i.e. the 6th of the 6th switch element TR6
Source electrode SE6 extends to the 3rd pixel electrode PE3 and the 4th sub-pixel electricity in the region with the second pixel cell PX2 in itself
It is each overlapping in the PE4 of pole.
In addition, the 3rd switch element TR3 the 3rd source electrode SE3 can be with the first storage line RL1 and the second storage line RL2
In any one connection, and the 6th switch element TR6 the 6th source electrode SE6 can with the 3rd storage line RL3 and the 4th
Store any one connection in line RL4.
Therefore, the first storage line RL1 for extending in a first direction on d1, the second storage line RL2, the 4th storage line RL4 and
5th storage line RL5 is connected netted to be formed with the 3rd storage line RL3 and the 6th storage line RL6 that extend on second direction d2
Structure.Therefore, the first storage storage lines of line RL1 to the 6th RL6 resistive component is reduced, to prevent from providing to the 3rd switch element
TR3 and the 6th switch element TR6 storage signal S IR drop phenomenons.
Although for example, not shown in accompanying drawing, the first pixel cell PX1 and the second pixel cell PX2 show blue color.
Figure 19 is the chart for illustrating the effect of LCD device according to an illustrative embodiment of the invention.In Figure 19
In the trunnion axis of chart that shows show that ratio drops in the IR of the storage signal represented by percentage.In the vertical axis of chart, (a)
Traditional LCD device is shown, (b) is shown with the first pixel cell PX1 (references according to an illustrative embodiment of the invention
LCD device Fig. 2), and (c) shows the first pixel with the blue color of display according to an illustrative embodiment of the invention
Unit PX1 (reference picture 2) LCD device.
Reference picture 19, when the IR drop ratios of the storage signal of conventional LCD apparatus are set to 100, in the situation of (c)
Under, it can be seen that its IR drop ratio for storing signal is reduced to about half of the IR drop ratios of the storage signal of conventional LCD apparatus,
And in the case of (b), it can be seen that its IR drop ratio for storing signal reduces the storage signal of about conventional LCD apparatus
The 67% of IR drop ratios.
By the improvement planar horizontal string of the LCD device with reference to following table description according to an illustrative embodiment of the invention
The effect disturbed.
With reference to table, it can be seen that with the first pixel cell PX1 (reference pictures according to an illustrative embodiment of the invention
2) the planar horizontal crosstalk (- 0.5%) of LCD device, compared with the planar horizontal crosstalk (- 2.96%) of conventional LCD apparatus, subtracts
Lack about 83%.
[table]
In the ending of detailed description, it will be appreciated by those skilled in the art that the principle away from the present invention can there is no
In the case of to preferred embodiment carry out many change and modifications.Therefore, preferred embodiment disclosed by the invention is only used for
General and descriptive meaning, rather than for the purpose of limitation.
Claims (10)
1. a kind of liquid crystal display device, including:
Substrate;
First grid polar curve, arrangement is on the substrate;
Data wire, is arranged on the first grid polar curve;
First sub-pixel unit, including:First switching element, the first switching element includes being connected with the first grid polar curve
Coordination electrode and the first electrode that is connected with the data wire;And first pixel electrode, with the first switching element
Second electrode connection;
Second sub-pixel unit, including:Second switch element, the second switch element includes being connected with the first grid polar curve
Coordination electrode and the first electrode that is connected with the data wire;Second pixel electrode, with the second switch element
Two electrodes are connected;And the 3rd switch element, including the coordination electrode being connected with the first grid polar curve;And
Distribution is stored, including:First storage line, its at least a portion is overlapping with first pixel electrode, and second deposits
Storage line, its at least a portion is overlapping with second pixel electrode,
Wherein, the first electrode of the 3rd switch element is arranged in and the described first storage line and the second storage line arrangement
It is connected on the different layer of layer thereon, and with the described first storage line and described second storage both line, and described the
The second electrode of three switch elements is connected with second pixel electrode.
2. liquid crystal display device according to claim 1,
Wherein, the first storage line and the second storage line are arranged in the layer phase being disposed thereon with the first grid polar curve
On same layer.
3. liquid crystal display device according to claim 1,
Wherein, the second electrode of the 3rd switch element is arranged in the layer identical layer being disposed thereon with the data wire
On.
4. liquid crystal display device according to claim 1,
Wherein, the second electrode of the 3rd switch element is connected by the first contact hole with the described first storage line, and is led to
The second contact hole is crossed to be connected with the described second storage line.
5. liquid crystal display device according to claim 1,
Wherein, the first storage line surrounds first pixel electrode.
6. liquid crystal display device according to claim 1,
Wherein, the second storage line includes the horizontal component extended in a first direction and different from the first direction
The vertical component that second party is upwardly extended.
7. liquid crystal display device according to claim 6, further comprises:
Second gate line, is adjacent to the first grid polar curve arrangement;
3rd sub-pixel unit, including:4th switch element, the 4th switch element includes being connected with the second gate line
Coordination electrode and the first electrode that is connected with the data wire;And the 3rd pixel electrode, with the 4th switch element
Second electrode connection;And
4th sub-pixel unit, including:5th switch element, the 5th switch element includes being connected with the second gate line
Coordination electrode and the first electrode that is connected with the data wire;4th pixel electrode, with the 5th switch element
Two electrodes are connected;And the 6th switch element, including the coordination electrode being connected with the second gate line,
Wherein, the storage distribution further comprises:3rd storage line, its at least a portion and the 3rd pixel electrode weight
It is folded;And the 4th storage line, its at least a portion is overlapping with the 4th pixel electrode,
And an electrode of the 6th switch element is connected with both the described 3rd storage line and the 4th storage line, and
The vertical component of the second storage line is connected with the described 3rd storage line.
8. liquid crystal display device according to claim 1,
Wherein, first sub-pixel unit further comprises being arranged in the first storage line and first pixel electrode
Between the first storage, and
Second sub-pixel unit further comprises being arranged between the second storage line and second pixel electrode
The second storage.
9. liquid crystal display device according to claim 1,
Wherein, the 3rd switch element further comprises the first electrode and the described 3rd for being arranged in the 3rd switch element
Floating electrode between the second electrode of switch element.
10. liquid crystal display device according to claim 1,
Wherein, the second switch element further comprises the extension being connected with the second electrode of the second switch element,
And
At least a portion of the extension of the second switch element and the described second storage line overlap.
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EP (1) | EP3229068B1 (en) |
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CN104238209A (en) * | 2014-09-18 | 2014-12-24 | 深圳市华星光电技术有限公司 | Display panel, and pixel structure and driving method thereof |
CN104267552A (en) * | 2014-09-24 | 2015-01-07 | 深圳市华星光电技术有限公司 | Array substrate and liquid crystal display panel |
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CN104834138A (en) * | 2015-05-25 | 2015-08-12 | 深圳市华星光电技术有限公司 | High-definition liquid crystal displayer pixel circuit |
CN104881195A (en) * | 2015-06-18 | 2015-09-02 | 京东方科技集团股份有限公司 | Array substrate and driving method thereof, display panel, display device |
Cited By (3)
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TWI671580B (en) * | 2018-06-29 | 2019-09-11 | 友達光電股份有限公司 | Display device |
CN110858044A (en) * | 2018-08-23 | 2020-03-03 | 三星显示有限公司 | Liquid crystal display device having a plurality of pixel electrodes |
CN110908196A (en) * | 2018-09-18 | 2020-03-24 | 三星显示有限公司 | Display device |
Also Published As
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US20180004057A1 (en) | 2018-01-04 |
EP3229068A1 (en) | 2017-10-11 |
EP3229068B1 (en) | 2019-05-22 |
JP2017187750A (en) | 2017-10-12 |
JP7037889B2 (en) | 2022-03-17 |
US9857654B2 (en) | 2018-01-02 |
CN107272286B (en) | 2021-11-23 |
KR102493218B1 (en) | 2023-01-30 |
US20170285427A1 (en) | 2017-10-05 |
KR20170115135A (en) | 2017-10-17 |
US10156759B2 (en) | 2018-12-18 |
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