CN107271498A - Glucose quantitation test sensor and preparation method based on microwave patch resonator - Google Patents
Glucose quantitation test sensor and preparation method based on microwave patch resonator Download PDFInfo
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
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Abstract
The present invention discloses a kind of glucose quantitation test sensor based on microwave patch resonator and preparation method, sensor prepared by this method solves the problems, such as inaccuracy during microwave device measure glucose concentration, the sample paster of patch resonator and coplanar waveguide feeder line is made on semiconductor substrate front first, then the fence structure of the photoresistance glue of SU 8 is made in the front containing sample patch substrate, or groove structure is made at the back side containing sample patch substrate.The present invention, as detection parameter, is realized detection reaction time, high sensitivity and the repeatable utilization level no more than one second, overcomes the drawbacks of being unable to quantitative test of biology sensor generally existing based on microwave device using resonant frequency and reflectance factor.
Description
Technical field
The present invention relates to a kind of glucose quantitation test sensor based on microwave patch resonator and preparation method.
Background technology
Diabetes are a kind of metabolic diseases, and it is characterized in the blood glucose of patient for a long time higher than standard value, whole world glycosuria
Sufferer number, 1997 is 100,000,000 2,4,000,000 people, the whole world in 2014 is estimated to be 4.22 hundred million adults and suffers from diabetes, due to diabetes
Number of patients quickly increases, and its complication can cause financial burden, quality of the life to decline, therefore for the early stage of diabetes
Detection becomes particularly important.Glucose solution tests solution as conventional early stage, to the detection important in inhibiting of its concentration.
The detection method of conventional concentration of glucose has three kinds at present：Chemical method based on biology enzyme；Based on optics optics side
Method；Method based on microwave device.Microwave device detects that concentration of glucose, as a kind of emerging detection method, is increasingly people
Concern.Because the value and its dielectric constant of the concentration of glucose solution are inversely proportional, concentration of glucose is higher, its dielectric constant
It is smaller, thus various concentrations glucose solution contacted with microwave device after, due to the difference of dielectric constant, to microwave device
The influence of electromagnetic nature is also different so that the parameter characteristic of microwave device also changes therewith, microwave device bio-sensing
Device is exactly based on the parameter characteristic that detection microwave device is surveyed, so as to obtain the linear pass between device parameters and concentration of glucose
System, the concentration of glucose is calculated with this linear relationship.That reports at present can be used for the microwave device ginseng of detection glucose solution
Number characteristics have equivalent resistance, equivalent capacitance value, equivalent inductance value, dielectric constant values, resonant frequency, transmission zero frequency, anti-
Coefficient and transmission coefficient etc. are penetrated, by the analysis to these parameters, researcher can analyze and calculate microwave device
The linear relationship existed between parameter and concentration of glucose, the demand of examination of glucose concentration is realized using the linear relationship.
Existing biological enzyme assay method generally requires longer time come so that biology enzyme is filled with glucose solution
The reaction divided, and then measurement result is obtained, the reaction time is relatively long and biology enzyme can not be reused, and increases and measures into
This.Optical detecting method similarly needs the solution and instrument come needed for stably measured the regular hour, and the reaction time is longer.This
Outside, the measurement stability of measuring method is easily influenceed by factors such as shape, thickness, the density of measurement solution, measures
As a result accuracy can not be ensured well.Compared to above two measuring method, the bio-sensing based on microwave device
The method of device has many advantages, such as fast sensitivity height, reaction time, repeatable utilization, and above-mentioned characteristic is current biology sensor
One of important directions of research.Another focus direction that quantitative detection is studied as biology sensor at this stage, is received more
Carry out the concern of more scientific research personnel.Because the detection technique of existing glucose solution is often limited to the consumption of solution, shape
The influence of shape and test position, the accuracy and reliability of its result cannot be guaranteed, and largely limit glucose
The extensive use of biology sensor.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of glucose quantitation test based on microwave patch resonator and passed
Sensor and preparation method, the present invention, as detection parameter, realize the inspection no more than one second using resonant frequency and reflectance factor
Reaction time, high sensitivity and repeatable utilization level are surveyed, the biology sensor generally existing based on microwave device is overcome
The drawbacks of being unable to quantitative test.
The technology used in the present invention is as follows：
A kind of glucose quantitation based on microwave patch resonator tests the preparation method of sensor, first semiconductor-based
The sample paster of patch resonator and coplanar waveguide feeder line is made on plate front, then in the front system containing sample patch substrate
Make the fence structure of SU-8 photoresistance glue, including following making step：
Step (1) substrate surface carries out hydrophilicity-imparting treatment；
Step (2) application plasma carries out surface cleaning processing to substrate；
Step (3) carries out spin coating in substrate front side using SU-8 photoresistances glue material, so as to obtain compactness height, nothing
Empty structure, the SU-8 photoresist layers without leaflet layer；
Step (4) is soft to dry the water constituent removed in SU-8 photoresistance glue, and then SU-8 photoresistance glue materials are entered using ultraviolet
Row exposure, forms the fence structure of SU-8 photoresistance glue in substrate front side, and described fence structure should surround patch resonant completely
Device, and the position of coplanar waveguide feeder line is then needed outside fence structure, then hard baking is fallen in SU-8 photoresists with evaporating completely
The remaining solvent in face, is then developed using the special developer solution immersion bases of SU-8；
Step (5) uses deionized water solution cleaning base plate surface impurity；
Step (6) is dried firmly, the bonding force between enhancing SU-8 photoresistances glue and semiconductor substrate.
The present invention also has following technical characteristic：
1st, step as described above (3) is at 100 DEG C~150 DEG C, 300rpm~500rpm, under 10rpm/s acceleration,
In substrate front side spin coating is carried out using SU-8 photoresistances glue material.
2nd, step as described above (4) under the conditions of 65 DEG C~85 DEG C it is soft dry the water that removes in SU-8 photoresistance glue for 5 minutes into
Point, then in 240mJ/cm2~300mJ/cm2Under conditions of SU-8 photoresistance glue materials are exposed using ultraviolet, in substrate
Form the fence structure of SU-8 photoresistance glue on front, described fence structure should surround patch resonator completely, and coplanar ripple
Leading the position of feeder line then needs outside described fence structure, then under the conditions of 95 DEG C~115 DEG C it is hard bakee 10 minutes~
Remaining solvent inside SU-8 photoresists was fallen with evaporating completely in 20 minutes, then using the special developer solution immersion substrates 30 of SU-8~
Developed within 45 minutes.
3rd, step as described above (6) under the conditions of 150 DEG C~250 DEG C it is hard dry more than 20 minutes enhancing SU-8 photoresistances glue with
Bonding force between semiconductor substrate.
4th, fence structure as described above is rectangle or circle.
5th, another glucose quantitation based on microwave patch resonator tests the preparation method of sensor, first half
Conductor substrate front side makes the sample paster of patch resonator and coplanar waveguide feeder line, then in the back of the body containing sample patch substrate
Face makes groove structure, including following making step：
Step (1) first determines the position of back side groove, is the position at the positive corresponding back side of patch resonator, and greatly
In the corresponding area in the back side of the positive patch resonator, and the corresponding position in the back side of positive coplanar waveguide feeder line is then
Outside the groove location；Then except groove location smears optical resistance glue layer,
Step (2) implements etching operation using the fluorine-based etching property gas of deep silicon etching technology utilization, recycles carbon fluorine-based blunt
The property changed gas implements passivation operation, is then iteratively repeated the operation of " etching-passivation ", the substrate back until completing given thickness
Deep silicon etching, realizes patch resonator back side fluted body structure；
Step (3) is carried out at hydrophiling in ion reaction etching chamber with etching property gas to ready-made groove structure surface
Reason；
It is clear that step (4) carries out surface cleaning using numb agglutinin solution and deionized water solution to ready-made groove structure
Reason.
6th, step as described above (2) uses the fluorine-based etching property gas of deep silicon etching technology utilization 10-2~10-3mbar
Vacuum, 2500~3000 watts of power implements etching operation at a temperature of -10 DEG C 6~10 seconds, and utilizes the fluorine-based passivation of carbon
Property gas is 10-2~10-3Implement passivation operation under mbar vacuum, 1500~2000 watts of power 2~4 seconds, and repeatedly
The operation of repetition " etching-passivation " 55~65 times, the substrate back deep silicon etching until completing given thickness, realizes patch resonant
Device back side groove structure.
7th, groove structure as described above is rectangle or circle.
8th, the preparation method that the sample paster of patch resonator and coplanar waveguide feeder line is made on semiconductor substrate front
Comprise the following steps：
Step (1) uses semiconductor substrate, cleans its surface, it is ensured that its surface cleaning and free from admixture；
Step (2) is precipitated a layer thickness and received for 50~200 on a semiconductor substrate using the meteorological intermediate processing of low pressure chemical
The oxide or nitride passivation layer of rice, so as to obtain more flat surface；
Step (3) grows seed metal layer that a layer thickness is 50~150 nanometers to lift semiconductor using spray method
Bonding force between substrate and subsequent device metal level；
Step (4) forms the optical resistance glue layer of patterning, the optical resistance glue layer window pair of patterning in the seed metal layer
Patch resonator that should be in precalculated position and coplanar waveguide feeder line position；
Step (5) plating a layer thickness is 7.0~10.0 microns of thick metal levels to constitute patch resonator and coplanar ripple
Lead the structure of feeder line；
Step (6) removes photoresistance glue；
Step (7) prevents short circuit with etching property gas to remove unwanted seed metal；So far, microwave patch resonator
Structure is completed, and the structure now completed is referred to as into sample paster structure.
9th, a kind of glucose quantitation test biology based on microwave patch resonator prepared based on method as described above
Sensor.
Beneficial effects of the present invention：
(1) present invention proposes by micro-nano technology technique and realizes quantifying, pinpointing, shaping and survey based on microwave device
Examination, solves the problems, such as inaccuracy during microwave device measure glucose concentration；
(2) present invention realize the trace detection of concentration of glucose, efficiently save test glucose solution into
This, is conducive to being commercialized popularization and application；
(3) present invention is realizing high sensitivity and the spy of low reaction time that microwave device is detected for glucose solution
On the basis of property, the repeatable utilization level of device furthermore achieved that；
(4) other can also adopt the biological biography of invention proposition for the sensitive biomarker solution of dielectric constant
Sensor is used as detection device.
Brief description of the drawings
Fig. 1 is the microwave patch resonator schematic diagram based on silicon substrate and combination front SU-8 fence structures of embodiment 1；
Fig. 2 illustrates for the front of the microwave patch resonator based on silicon substrate and combination back side groove structure of embodiment 2
Figure；
Fig. 3 illustrates for the back side of the microwave patch resonator based on silicon substrate and combination back side groove structure of embodiment 2
Figure；
Fig. 4 is SU-8 " enclosure wall " structure paster biology sensor microscope figure based on silicon substrate；
Fig. 5 is the microscope direct picture figure of the biology sensor of the groove structure based on silicon substrate；
Fig. 6 is the microscope opposite side image graph of the biology sensor of multiple groove structures based on silicon substrate；
Fig. 7 is measurement of reflection-factor datagram；(a) it is front SU-8 " enclosure wall " structures and the back side " groove " structure with (b)
Biology sensor respectively nude film, instill isopropyl amine aqueous solution and instill deionized water solution when the measurement of reflection-factor
Data；And biology sensor that (d) be front SU-8 " enclosure wall " structures and the back side " groove " structure is in instillation concentration range (c)
Measurement of reflection-factor data during 25mg/dL~1000mg/dL glucose solution；
Fig. 8 is linear fit tracing analysis figure：(a) it is front SU-8 " enclosure wall " structures and the back side " groove " structure with (b)
Biology sensor on the linear relationship of resonant frequency value and concentration of glucose, (linear correlation degree is respectively 0.96823 He
0.90470)；And biology sensor that (d) is front SU-8 " enclosure wall " structures and the back side " groove " structure is on reflectance factor (c)
Amplitude and the linear relationship of concentration of glucose (linear correlation degree is respectively 0.97848 and 0.98712)；
Wherein 1 patch resonator；2 coplanar waveguide feeder line structures；3 silicon substrates；4th, fence structure；5th, groove structure.
Embodiment
Below according to accompanying drawing citing, the present invention will be further described：
Embodiment 1：
As shown in figs. 1 and 4, glucose biological based on microwave patch resonator sensing of a kind of front containing fence structure
The preparation method of device is as follows：
(1) first by semiconductor substrates such as glass, quartz, silicon, and once cleaned, then used using isopropyl amine aqueous solution
Deionized water solution carries out secondary cleaning, it is ensured that surface cleaning and free from admixture；
(2) using the meteorological intermediate processing of low pressure chemical, it is 50~200 nanometers that a layer thickness is precipitated on a semiconductor substrate
Silica or silicon nitride passivation, so as to obtain processing of the more flat surface in order to after；
(3) it is that 20~50 ran titaniums or chromium are used as first layer seed metal to grow a layer thickness by the use of spray method
Layer, afterwards recycle spray method grow a layer thickness for 30~100 rans gold as second layer seed metal layer with
Lift the bonding force between semiconductor substrate and subsequent device metal level；
(4) optical resistance glue layer of patterning is formed in the seed metal layer, the optical resistance glue layer window of patterning corresponds to
The predefined patch resonator and coplanar waveguide feeder line position；
(5) plating a layer thickness is 6.0~9.0 microns of thick copper as first layer metal layer, afterwards continuation plating first
A layer thickness is that gold 0.5~1.0 micron thick constitutes patch resonator and coplanar waveguide feeder line as second layer metal layer
Structure.Thicker copper is typically used herein, because it has relatively higher electrical conductivity, more low-resistivity, more low-loss metal
Material and price are lower, it is hereby achieved that reaction speed faster, it is convenient after device welding, and obtain it is lower plus
Work cost；But copper is oxidizable, so finally needing to add one layer of golden is used as to prevent oxide layer again on copper.
(6) utilize metal-stripping equipment and remove photoresistance glue using acetone soln；
(7) inductive coupled plasma etching technics is based on, unwanted kind is removed using the etching such as argon gas property gas
Short circuit phenomenon when interest category is to prevent that device from working.
(8) property gas is etched to foregoing ready-made sample paster table with argon gas, chlorine etc. in ion reaction etching chamber
Face carries out hydrophilicity-imparting treatment；
(9) N is applied at 80~140 DEG C of certain temperature2H2/O2、O2Plasma to foregoing ready-made sample paster to entering
The processing of row surface cleaning；
(10) at 100 DEG C~150 DEG C, 300rpm~500rpm under 10rpm/s acceleration, uses SU-8 photoresistance glue materials
Material carries out spin coating on foregoing ready-made sample paster structure, so as to obtain compactness height, without empty structure, without leaflet layer
SU-8 photoresist layers；
(11) the soft water constituent dried in removing SU-8 photoresistance glue in 5 minutes under the conditions of 65 DEG C~85 DEG C, secondly in 240mJ/
cm2~300mJ/cm2Under conditions of SU-8 photoresistance glue materials are exposed using ultraviolet, on the sample paster structure
" enclosure wall " patterning is formed, the SU-8 photoresistance glue windows of " enclosure wall " patterning should completely include foregoing ready-made patch resonator,
Can be square structure, rectangular configuration, circular configuration etc., and the position of coplanar waveguide feeder line then need at this " enclosure wall " structure it
Outside, then bakee with evaporating completely to fall for 10 minutes~20 minutes afterwards firmly under the conditions of 95 DEG C~115 DEG C and remained inside SU-8 photoresists
Remaining solvent simultaneously further reduces standing wave effect, is then shown within 30~45 minutes using the special developer solution immersion substrates of SU-8
Shadow；
(12) using the substrate surface impurity in deionized water solution cleaning step (11)；
(13) it is hard under the conditions of 150 DEG C~250 to dry more than 20 minutes at utmost to strengthen SU-8 photoresistances glue and semiconductor
The direct bonding force of substrate.
Embodiment 2：
As shown in Fig. 2-3,5-6, the glucose biological based on microwave patch resonator of groove structure is contained at a kind of back side
The preparation method of sensor is as follows：
(1) first by semiconductor substrates such as glass, quartz, silicon, and once cleaned, then used using isopropyl amine aqueous solution
Deionized water solution carries out secondary cleaning, it is ensured that surface cleaning and free from admixture；
(2) using the meteorological intermediate processing of low pressure chemical, it is 50~200 nanometers that a layer thickness is precipitated on a semiconductor substrate
Silica or silicon nitride passivation, so as to obtain processing of the more flat surface in order to after；
(3) it is that 20~50 ran titaniums or chromium are used as first layer seed metal to grow a layer thickness by the use of spray method
Layer, afterwards recycle spray method grow a layer thickness for 30~100 rans gold as second layer seed metal layer with
Lift the bonding force between semiconductor substrate and subsequent device metal level；
(4) optical resistance glue layer of patterning is formed in the seed metal layer, the optical resistance glue layer window of patterning corresponds to
The predefined patch resonator and coplanar waveguide feeder line position；
(5) plating a layer thickness is 6.0~9.0 microns of thick copper as first layer metal layer, afterwards continuation plating first
A layer thickness is that gold 0.5~1.0 micron thick constitutes patch resonator and coplanar waveguide feeder line as second layer metal layer
Structure.Thicker copper is typically used herein, because it has relatively higher electrical conductivity, more low-resistivity, more low-loss metal
Material and price are lower, it is hereby achieved that reaction speed faster, it is convenient after device welding, and obtain it is lower plus
Work cost；But copper is oxidizable, so finally needing to add one layer of golden is used as to prevent oxide layer again on copper.
(6) utilize metal-stripping equipment and remove photoresistance glue using acetone soln；
(7) inductive coupled plasma etching technics is based on, unwanted kind is removed using the etching such as argon gas property gas
Short circuit phenomenon when interest category is to prevent that device from working；
(8) optical resistance glue layer of patterning, the optical resistance glue layer window of patterning are formed at the back side of foregoing ready-made sample paster
Mouth is complementary to and (is in reverse to) the predefined groove location (only groove location does not have optical resistance glue layer), and predefined groove is located at
The underface of foregoing ready-made positive patch resonator, and the positive patch resonator is completely included, can be square structure, square
Shape structure, circular configuration etc., and the position of coplanar waveguide feeder line is then needed at this outside " groove " structure；
(9) fluorine-based etching property gas is utilized 10 using deep silicon etching technique (Bosch)-2~10-3Mbar vacuum,
2500~3000 watts of power, implements etching operation at a temperature of -10 DEG C 6~10 seconds, and is existed using the fluorine-based assivation property gas of carbon
10-2~10-3Implement passivation operation under mbar vacuum, 1500~2000 watts of power 2~4 seconds, and be iteratively repeated " quarter
The operation of erosion-passivation " 55~65 times, the substrate back deep silicon etching until completing given thickness, realizes the patch resonator back side
" groove " type structure；
(10) in ion reaction etching chamber with etching property gas to carrying out parent to foregoing ready-made " groove " body structure surface
Hydration process；
(11) it is clear to carrying out surface to foregoing ready-made " groove " structure using numb agglutinin solution and deionized water solution
Clean cleaning.
Embodiment 1-2 advantage and beneficial effect；
(1) SU-8 " enclosure wall " type structures in front can realize scope in 0.1mm3-10mm3Between volume, can detect volume
Scope is 0.1 μ L-10 μ L glucose solution, and the physical dimension can adjust；
(2) " groove " type structure in the back side can realize scope in 0.1mm3–15mm3Between volume, can detect volume scope
For 0.1 μ L-15 μ L glucose solution, the physical dimension can adjust；
(3) it can realize that the quantitative of all liquid biological labels in addition to glucose solution, setting, fixed point are detected；
(4) glucose solution needed for detecting is less than 1 μ L, can save detection solution with high degree；
(5) microwave patch resonator is single layer structure, and processing is simple, with low cost；
(6) two kinds of biology sensors proposed by the present invention realize high sensitivity, the low reaction time, it is reusable,
Many good characteristics of small size；
(7) linear regression analysis shows that the invention has outstanding linear correlation degree；
(8) a kind of effective way that can be detected as prediabetes, is conducive to popularization and application.
Embodiment 3：
The detection of glucose concentration
(1) HFSS v16 softwares are utilized on computers, design and emulate obtain two kinds of specifications it is in neat formation based on substrate just
The patch resonator of face " enclosure wall " structure and substrate back " groove " structure, Fig. 1 and Fig. 2 are respectively to be based on front SU-8 " enclosure wall "
Structure and the patch resonator based on the back side " groove " type structure；
(2) frequency response of patch resonator should have high quality factor, and the size of patch resonator should be slightly less than
" enclosure wall " and " groove " structure, so as to ensure that paster can be completely covered after " enclosure wall " and " groove " structure is instilled and pass for test solution
Sensor, contacts and influences the electric field of patch resonator, final that the frequency of patch resonator and the value of reflectance factor are become
Change, for characterizing the concentration of glucose；
(3) processing of biology sensor is completed using nanometer technique, obtained device is processed as shown in Figure 3；
(4) finishing analysis are carried out to the data that measurement is obtained, obtains characterizing the key parameter of biology sensor.For example, clever
Sensitivity, reaction time, detection limit (LOD) value and the linearity.
Claims (10)
1. a kind of glucose quantitation based on microwave patch resonator tests the preparation method of sensor, first in semiconductor substrate
The sample paster of patch resonator and coplanar waveguide feeder line is made on front, is then made in the front containing sample patch substrate
The fence structure of SU-8 photoresistance glue, it is characterised in that including following specific make step：
Step (1) substrate surface carries out hydrophilicity-imparting treatment；
Step (2) application plasma carries out surface cleaning processing to substrate；
Step (3) carries out spin coating in substrate front side using SU-8 photoresistances glue material, so as to obtain compactness height, without cavity
Structure, the SU-8 photoresist layers without leaflet layer；
Step (4) is soft to dry the water constituent removed in SU-8 photoresistance glue, and then SU-8 photoresistance glue materials are exposed using ultraviolet
Light, forms the fence structure of SU-8 photoresistance glue in substrate front side, and described fence structure should surround patch resonator completely, and
The position of coplanar waveguide feeder line is then needed outside fence structure, then hard bakee falls residue inside SU-8 photoresists with evaporating completely
Solvent, then developed using SU-8 special developer solutions immersion substrate；
Step (5) uses deionized water solution cleaning base plate surface impurity；
Step (6) is dried firmly, the bonding force between enhancing SU-8 photoresistances glue and semiconductor substrate.
2. a kind of glucose quantitation based on microwave patch resonator according to claim 1 tests the preparation side of sensor
Method, it is characterised in that：Described step (3) is at 100 DEG C~150 DEG C, 300rpm~500rpm, under 10rpm/s acceleration,
In substrate front side spin coating is carried out using SU-8 photoresistances glue material.
3. a kind of glucose quantitation based on microwave patch resonator according to claim 1 tests the preparation side of sensor
Method, it is characterised in that：Described step (4) under the conditions of 65 DEG C~85 DEG C it is soft dry the water that removes in SU-8 photoresistance glue for 5 minutes into
Point, then in 240mJ/cm2~300mJ/cm2Under conditions of SU-8 photoresistance glue materials are exposed using ultraviolet, in substrate
Form the fence structure of SU-8 photoresistance glue on front, described fence structure should surround patch resonator completely, and co-planar waveguide
The position of feeder line is then needed outside described fence structure, then hard under the conditions of 95 DEG C~115 DEG C to bakee 10 minutes~20
Minute falls remaining solvent inside SU-8 photoresists with evaporating completely, then using the special developer solution immersion substrates 30~45 of SU-8
Minute is developed.
4. the preparation side of sensor is tested according to a kind of glucose quantitation based on microwave patch resonator described in claim 1
Method, it is characterised in that：Described step (6) under the conditions of 150 DEG C~250 DEG C it is hard dry more than 20 minutes enhancing SU-8 photoresistances glue with
Bonding force between semiconductor substrate.
5. the preparation side of sensor is tested according to a kind of glucose quantitation based on microwave patch resonator described in claim 1
Method, it is characterised in that：Described fence structure is rectangle or circle.
6. a kind of glucose quantitation based on microwave patch resonator tests the preparation method of sensor, first in semiconductor substrate
Front makes the sample paster of patch resonator and coplanar waveguide feeder line, it is characterised in that and then containing sample patch substrate
The back side make groove structure, including following making step：
Step (1) first determines the position of back side groove, is the position at the positive corresponding back side of patch resonator, and more than this
The corresponding area in the back side of positive patch resonator, and the corresponding position in the back side of positive coplanar waveguide feeder line is then at this
Outside groove location；Then except groove location smears optical resistance glue layer,
Step (2) implements etching operation using the fluorine-based etching property gas of deep silicon etching technology utilization, recycles the fluorine-based assivation property of carbon
Gas implements passivation operation, is then iteratively repeated the operation of " etching-passivation ", until the deep silicon of the substrate back for completing given thickness
Etching, realizes patch resonator back side fluted body structure；
Step (3) carries out hydrophilicity-imparting treatment with etching property gas in ion reaction etching chamber to ready-made groove structure surface；
Step (4) carries out surface cleaning cleaning using numb agglutinin solution and deionized water solution to ready-made groove structure.
7. a kind of glucose quantitation based on microwave patch resonator according to claim 5 tests the preparation side of sensor
Method, it is characterised in that；Described step (2) is using the fluorine-based etching property gas of deep silicon etching technology utilization 10-2~10-3mbar
Vacuum, 2500~3000 watts of power implements etching operation at a temperature of -10 DEG C 6~10 seconds, and utilizes the fluorine-based passivation of carbon
Property gas is 10-2~10-3Implement passivation operation under mbar vacuum, 1500~2000 watts of power 2~4 seconds, and repeatedly
The operation of repetition " etching-passivation " 55~65 times, the substrate back deep silicon etching until completing given thickness, realizes patch resonant
Device back side groove structure.
8. a kind of glucose quantitation based on microwave patch resonator according to claim 5 tests the preparation side of sensor
Method, described groove structure is rectangle or circle.
9. a kind of glucose quantitation based on microwave patch resonator tests the system of sensor according to claim 1 or 5
Preparation Method, it is characterised in that；The sample paster of patch resonator and coplanar waveguide feeder line is made on semiconductor substrate front
Preparation method comprises the following steps：
Step (1) uses semiconductor substrate, cleans its surface, it is ensured that its surface cleaning and free from admixture；
Step (2) is using the meteorological intermediate processing of low pressure chemical, and it is 50~200 nanometers that a layer thickness is precipitated on a semiconductor substrate
Oxide or nitride passivation layer, so as to obtain more flat surface；
Step (3) grows seed metal layer that a layer thickness is 50~150 nanometers to lift semiconductor substrate using spray method
With the bonding force between subsequent device metal level；
Step (4) forms the optical resistance glue layer of patterning in the seed metal layer, and the optical resistance glue layer window of patterning corresponds to
The patch resonator in precalculated position and coplanar waveguide feeder line position；
Step (5) plating a layer thickness is 7.0~10.0 microns of thick metal levels to constitute patch resonator and co-planar waveguide feedback
The structure of line；
Step (6) removes photoresistance glue；
Step (7) prevents short circuit with etching property gas to remove unwanted seed metal；So far, microwave patch resonator structure
Complete, the structure now completed is referred to as sample paster structure.
10. a kind of glucose quantitation based on microwave patch resonator tests the system of sensor according to claim 1 or 5
Sensor prepared by Preparation Method.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109975327A (en) * | 2019-04-04 | 2019-07-05 | 王琮 | Lung cancer early diagnosis microwave respiration transducer and preparation method thereof based on semiconductor microactuator processing technology |
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| CN110501354A (en) * | 2019-08-28 | 2019-11-26 | 济南大学 | A kind of biosensor and its preparation method and application |
| CN110501354B (en) * | 2019-08-28 | 2022-07-01 | 济南大学 | Biosensor and preparation method and application thereof |
| CN112034018A (en) * | 2020-08-24 | 2020-12-04 | 江南大学 | Glucose biosensor based on PDMS microfluidic channel, preparation method and application |
| CN112034018B (en) * | 2020-08-24 | 2021-12-28 | 江南大学 | Glucose biosensor based on PDMS microfluidic channel, preparation method and application |
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| CN107271498B (en) | 2019-04-23 |
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