CN107268074A - The polycrystalline crucible and preparation method of a kind of aluminum oxide - Google Patents
The polycrystalline crucible and preparation method of a kind of aluminum oxide Download PDFInfo
- Publication number
- CN107268074A CN107268074A CN201610211448.7A CN201610211448A CN107268074A CN 107268074 A CN107268074 A CN 107268074A CN 201610211448 A CN201610211448 A CN 201610211448A CN 107268074 A CN107268074 A CN 107268074A
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- CN
- China
- Prior art keywords
- crucible
- aluminum oxide
- crucible base
- base
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B1/00—Producing shaped prefabricated articles from the material
- B28B1/20—Producing shaped prefabricated articles from the material by centrifugal or rotational casting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The polycrystalline crucible and preparation method of a kind of aluminum oxide, the aluminum oxide polycrystal crucible base and C/C that this crucible is molded by melting increase Strong layers and constituted；Described C/C increases Strong layers and is coated on the outer surface of foregoing crucible base；Crucible base is prepared from existing arc process quartz glass crucibles draft machine.The resistance to molten silicon etch of this crucible base, long lifespan and reduction crystal oxygen content；And the C/C that is close together is the problem of increase Strong layer and can effectively prevent the unexpected fragmentation of ceramics and leak silicon.
Description
Technical field
The present invention relates to a kind of crucible, the polycrystalline crucible and preparation method of specifically a kind of aluminum oxide.
Background technology
Monocrystalline silicon uses vertical pulling method (CZ) preparation, and its technique need to make the container for containing silicon melt of crucible.Past,
Without exception, the quartz glass crucibles founded using arc process are done drawn monocrystalline silicon and contain silicon melt in the whole world
Container.
The softening point of quartz glass crucibles is far below the temperature of silicon melt, therefore the earthenware of drawn monocrystalline silicon is made of quartz glass
Deformed during crucible high temperature greatly, quartz is also easily melt silicon etch, therefore the life-span is not long.It is generally now that a crucible draws two
Monocrystalline.
For decades, someone is attempted with other ceramic crucible Dai Change quartz glass crucibles always.
But the material of existing ceramic crucible is not good enough, it is impossible to while the need for meeting multiple crystal pulling.
Monocrystalline, polycrystalline, glass and ceramic crucible are because being fragile material, and it is more in the destruction that thermal cycle is crossed in kind of journey
For generation suddenly, it is the existing raw material of wood-charcoal protection crucible side of adapted, because size misfits, is difficult common stress,
Also the extremely difficult rupture for preventing this to produce suddenly.
Reality situation be：Quartz glass crucibles it is with a long history, technology of preparing is very ripe, and production capacity is huge to obtain mistake
Surplus, oneself closely bottoms out unit price, crucible expense Accounting in whole cost ratio oneself do not include greatly；Monocrystalline silicon will enter one
Step reduces cost, only walks this road of continuous crystal-pulling.For many years, people do not find the replacement of silica crucible
Thing, have to only limit the effort on the life-span of extension silica crucible；But can not be realized using quartz glass crucibles
Continuous drawing monocrystalline silicon.
The content of the invention
The object of the invention, is when solving to use existing quartz glass crucibles, because of earthenware Crucible short lifes, to lead to not connect
Continuous drawn monocrystalline silicon；The problems such as crucibles such as ceramics are frangible is solved simultaneously, so as to provide a kind of long-life, be used for
Crucible of growing single-crystal silicon and preparation method thereof.
The polycrystalline crucible of aluminum oxide of the present invention, increases Strong layers by the oxidation policrystalline silicon crucible base and C/C that melt and constitutes, described
C/C increase Strong layers be coated on the outer surface of foregoing crucible base；
The thickness of the crucible base is：1mm~30mm；Preferred thickness is 5mm~15mm；
The thickness that the C/C increases Strong layers is 1mm~15mm, and preferred thickness is 3mm~5mm；
The oxidation policrystalline silicon crucible base of described melting, is prepared with existing arc process silica crucible machine；Its step is：1、
In the die cavity that alumina powder is added to the graphite jig of crucible；2nd, mould is rotated；3rd, manually will with moulding stick
The alumina powder rotated in mould spreads out into required shape；The 4th, the discharge electrode of electric arc heated is moved into the mould of mould
In chamber；5th, electrode is powered, the starting the arc；6th, the direct aloxite (AI2O3) powder of radiation that electric arc is sent；7th, melt
Aluminum oxide is close to die cavity wall in the case where rotating the centrifugal action produced；8th, after alumina powder melting completely, by
Gradually stop arc；9th, after the solidification completely of aluminum oxide melting body, mould stops operating；10th, after cooling down, taken from die cavity
Go out aluminum oxide crucible base；11st, crucible base is annealed, mechanical shaping.
Described C/C increases Strong layers, can be laid on crucible base；Also C/C pallets, aluminum oxide polycrystal crucible base can be first prepared into
Directly it is molded on pallet.
Advantages of the present invention：
First, crucible of the invention, its crucible base does not select sinter molding, porose ceramic material without quartz glass yet
Material；And use not with molten pasc reaction, but can melt molding, porosity be directly 0 as quartz glass
Aluminum oxide polycrystal makees crucible base.It compared with quartz, aluminum oxide in itself not with molten pasc reaction；It and ceramic material phase
Than, its purity can be very high, and without because of the possibility that hole causes molten silicon to penetrate into and destroys.In addition the outside of crucible base
There is C/C to increase Strong layers of common stress, prevent cracking.The container for containing molten silicon is made of this crucible, except not polluting monocrystalline
Outside, the life-span is very long.
2nd, silica crucible is molded with quartz glass crucibles machine, is to have very ripe technology；Utilize this equipment and skill
Art, prepares aluminum oxide polycrystal crucible base, except the fusing point because of raw material is higher, technological parameter need to be adjusted outside,
Can directly it utilize.
After this crucible enhancement layer containing C/C, the Sheng silicon device of multiple pulling of silicon single crystal is particularly suitable for use in.
Specific implementation
The crucible of the present invention, increases Strong layers by the oxidation policrystalline silicon crucible base and C/C that melt and constitutes, described C/C increases Strong
Layer is coated on the outer surface of foregoing crucible base；
The thickness of the crucible base is：1mm~30mm；Preferred thickness is 5mm~15mm；
The thickness that the C/C increases Strong layers is 1mm~15mm, and preferred thickness is 3mm~5mm；
The oxidation policrystalline silicon crucible base of described melting, is prepared with existing arc process silica crucible machine.Its step is：1、
In the die cavity that alumina powder is added to the graphite jig of crucible；2nd, mould is rotated；3rd, manually will with moulding stick
The alumina powder rotated in mould spreads out into required shape；The 4th, the discharge electrode of electric arc heated is moved into the mould of mould
In chamber；5th, electrode is powered, the starting the arc；6th, the direct aloxite (AI2O3) powder of radiation that electric arc is sent；7th, melt
Aluminum oxide is close to die cavity wall in the case where rotating the centrifugal action produced；8th, after alumina powder melting completely, by
Gradually stop arc；9th, after the solidification completely of aluminum oxide melting body, mould stops operating；10th, after cooling down, taken from die cavity
Go out aluminum oxide crucible base；11st, crucible base is annealed, mechanical shaping.
Described C/C increases Strong layers, can be laid on crucible base；Also C/C pallets, aluminum oxide polycrystal crucible base can be first prepared into
Directly it is molded on pallet.
When crucible diameter is smaller, or in use, C/C layers can not separately be set in oxidizing atmosphere.
Claims (5)
1. the polycrystalline crucible and preparation method of a kind of aluminum oxide, it is characterised in that：Polycrystalline crucible base preparation method is：
The oxidation policrystalline silicon crucible base of described melting, is prepared using existing arc process silica crucible machine；
Its step is：1st, alumina powder is added in the die cavity of the graphite jig of crucible machine；2nd, mould is rotated；
3rd, it is artificial that the alumina powder rotated in mould is spread out into required shape with moulding stick；4th, putting electric arc heated
Electrode is moved into the die cavity of mould；5th, electrode is powered, the starting the arc；6th, the heat radiation that electric arc is sent directly melts oxygen
Change aluminium powder body；7th, the aluminum oxide of melting is close to die cavity wall in the case where rotating the centrifugal action produced；8th, aluminum oxide
After powder melting completely, gradually stop arc；9th, after the solidification completely of aluminum oxide melting body, mould stops operating；10、
After cooling, aluminum oxide crucible base is taken out from die cavity；11st, crucible base is annealed, mechanical shaping.
2. the polycrystalline crucible and preparation method of a kind of aluminum oxide, it is characterised in that：Crucible is by aloxite (AI2O3) polycrystalline
Crucible base and C/C increase Strong layers of composition；Described C/C increases Strong layers and is coated on the outer surface of foregoing crucible base.
3. according to claim 2 a kind of polycrystalline crucible of aluminum oxide and prepare method, it is characterised in that：Institute
The thickness for stating crucible base is 1mm~30mm；Preferred thickness is 5mm~15mm；
The thickness that the C/C increases Strong layers is 1mm~15mm.
4. according to claim 2 a kind of polycrystalline crucible of aluminum oxide and prepare method, it is characterised in that：Institute
The C/C stated increases Strong layers, can be laid on crucible base；Also C/C pallets can be first prepared into, aluminum oxide polycrystal crucible base exists
Nitrogen protection is lower to be directly molded on pallet.
5. according to claim 2 a kind of polycrystalline crucible of aluminum oxide and prepare method, it is characterised in that：When
Crucible diameter is smaller, or in use, C/C layers can not separately be set in oxidizing atmosphere.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610211448.7A CN107268074A (en) | 2016-04-07 | 2016-04-07 | The polycrystalline crucible and preparation method of a kind of aluminum oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610211448.7A CN107268074A (en) | 2016-04-07 | 2016-04-07 | The polycrystalline crucible and preparation method of a kind of aluminum oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107268074A true CN107268074A (en) | 2017-10-20 |
Family
ID=60051899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610211448.7A Pending CN107268074A (en) | 2016-04-07 | 2016-04-07 | The polycrystalline crucible and preparation method of a kind of aluminum oxide |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107268074A (en) |
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2016
- 2016-04-07 CN CN201610211448.7A patent/CN107268074A/en active Pending
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20171020 |
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| WD01 | Invention patent application deemed withdrawn after publication |