CN107256923A - A kind of preparation method with big photostrictive effectt device - Google Patents
A kind of preparation method with big photostrictive effectt device Download PDFInfo
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Abstract
The present invention proposes a kind of preparation method with big photostrictive effectt device, prepares in the following manner：(1) monocrystalline of the selection with orientation is used as conductive substrates；(2) using pulsed laser deposition (other methods can also be used, as long as epitaxial growth, such as molecular beam epitaxy, MBE can be realized) in the piezoelectric membrane that Grown thickness is 400 600nm；(3) conductive film, regrowth insulating barrier are first grown on piezoelectric membrane using pulsed laser deposition (other methods can also be used, as long as epitaxial growth, such as molecular beam epitaxy, MBE can be realized)；Growth thickness is on the insulating layer ferroelectricity photovoltaic layer and electrode.The application can be used for producing the CD-ROM driver antetype device with big photo-deformable, the anti-electromagnetic interference capability for steerable system in raising aircraft lays the foundation by grasping the optical drive various dimensions regulation and control method of Ferroelectric Multilayers and understanding fully its mechanism.
Description
Technical field
The present invention relates to a kind of CD-ROM driver main material, and in particular to a kind of system with big photostrictive effectt device
Make method.
Background technology
The aircraft such as fighter plane have very important status in modern war (especially air battle), and its high-altitude remote is made
The power of war ability depends primarily on steerable system.As modern war develops towards digitlization, information-based direction, electromagnetism ring
Border increasingly severe, electronic countermeasure is fiercer, and the anti-electromagnetic interference capability for improving steerable system in aircraft is imperative.Driving
Device is the key components in steerable system, mainly there is the forms such as electric drive, Magnetic driving and optical drive.With electricity, Magnetic driving phase
Than, CD-ROM driver due to without electromagnetic noise interference and without additional electric/magnetic field, and Wireless remote control can be realized, be easy to
The lightweight of device, miniaturization, it is integrated the advantages of and enjoy favor.
CD-ROM driver relies primarily on the photostrictive effectt work of material, and such material mainly has non-polar semiconductor, iron
Electric material, liquid crystal elastic body.Wherein, ferroelectric material is because having the characteristics such as illumination response is fast, photostrictive effectt is stronger to turn into light
The focus of driving field concern.However, from the point of view of the requirement to power source such as aircraft, its photostrictive effectt is strong not enough.
Therefore, in decades, domestic and international experts and scholars are realized to a certain extent by regulating and controlling composition and technique, optimal inspection condition etc.
The raising of ferroelectric material photo-deformable, but how significantly to strengthen the photostrictive effectt of ferroelectric material be still one it is important and
Anxious to be resolved the problem of.
Analyzed from its principle：The photostrictive effectt of ferroelectric material is the coupling of photovoltaic effect and inverse piezoelectric effect
Close and (produce photovoltage due to the photovoltaic effect of ferroelectric material under light illumination, the electric field action then provided in the voltage
Under, deformation is produced due to the inverse piezoelectric effect of ferroelectric material), it is strong and weak generally using photo-deformable xph(xph=d33Eph, its
Middle d33For piezoelectric modulus, EphFor photoproduction electric field) characterize.So, the photostrictive effectt of ferroelectric material to be strengthened, then require
Photoproduction electric field is improved, increases piezoelectric modulus.On the one hand, piezoelectric modulus to be strengthened, then require that material thickness is small；On the other hand, it is intended to
Photoproduction electric field is improved, then requires that material thickness is big.In a word, two aspects of piezoelectric modulus and photoproduction electric field are to ferroelectric material yardstick
It is required that being contradiction, this is to cause its inapparent major reason of photo-induced telescopic effect.
Since the photostrictive effectt of ferroelectric material is the coupling of photovoltaic effect and inverse piezoelectric effect, and in homogenous material
There is mutual conflict in both effects, it is therefore contemplated that：Ferroelectricity photovoltaic layer and piezoelectric layer are combined, while in view of integrated
Change, minimize, multilayer film composite construction is constructed, shown in such as Fig. 1 (a).
To make Fig. 1 (a) structures realize stronger photostrictive effectt, the most important condition is that ferroelectricity photovoltaic layer can produce big light
Give birth to voltage and energy useful effect is in piezoelectric layer.Numerous documents show：Thickness is bigger, and the photovoltage of ferroelectric material is higher.Therefore,
The interelectrode distance of ferroelectricity photovoltaic layer two in increase Fig. 1 (a) need to be tried, to obtain high photovoltage, and film thickness is usual
Less than 1 micron, the photovoltage that can be generated is extremely limited.Since high photovoltage can not be obtained from thickness (longitudinal direction), examine
Consider from length (transverse direction) to realize.It is, the electrode of ferroelectricity photovoltaic layer in Fig. 1 (a) is changed into left and right by up-down structure
Shown in structure, such as Fig. 1 (b).Secondly, in order to improve integrated level, simplify structure, remove the wire in Fig. 1 (b), obtain Fig. 1 (c).
But, there are two deficiencies in Fig. 1 (c) structures：First, the coverage (~1 millimeter) between the electrode of left and right is shorter, merely with
The very small part (about 1/10) of photovoltaic layer length, is unfavorable for obtaining high photovoltage；Second, because piezoelectric layer is relatively thin (only
For hundreds of nanometers), the photo-generated carrier in photovoltaic layer is likely to transmit to hearth electrode through piezoelectric layer along path 2, it is impossible to gather completely
Collect the left and right electrode in photovoltaic layer, this is also unfavorable for obtaining high photovoltage., need to be under photovoltaic layer in order to overcome the two not enough
Insulating barrier is inserted in face, shown in such as Fig. 1 (d).There is Fig. 1 (d) structures the necessary condition of strong photostrictive effectt to be：Photovoltaic layer has
High photovoltage, piezoelectric layer, which has, has stronger positive coupling effect between strong inverse piezoelectric effect, and this two layers.
Domestic and foreign scholars are opened at the aspect of inverse piezoelectric effect two for how improving the photovoltage of ferroelectric thin film and piezoelectric membrane
Open up compared with in-depth study, and achieved a series of valuable results of study.However, problems faced is now：It is how real
Existing positive coupling effect stronger between ferroelectricity photovoltaic layer and piezoelectric layer.
Analyzed from its structure and principle：(1) photovoltaic layer to be made produces high photovoltage, then in ferroelectricity photovoltaic film
Electricdomain should be along horizontal alignment；Piezoelectric layer to be made produces big deformation, then its electricdomain should be vertically orientated.Therefore, need to be to light
Lie prostrate crystal grain in layer and piezoelectric layer, the orientation of electricdomain carries out study on regulation.(2), can be to light because piezoelectric layer has inverse piezoelectric effect
Lie prostrate layer and produce stress, so as to influence the micro-structural and photovoltaic performance of photovoltaic layer.Conversely, as ferroelectricity photovoltaic layer is produced under light illumination
Certain deformation, can produce stress, so as to influence the micro-structural and piezoelectric property of piezoelectric layer to piezoelectric layer.In addition, piezoelectric layer/
There is stress in the interfaces such as electrode, photovoltaic layer/electrode, also can produce influence to the microstructure and performance of photovoltaic layer, piezoelectric layer.Cause
This, need to carry out study on regulation to the stress of composite construction in Fig. 1 (d).(3) because work function is different, in piezoelectric layer/electrode, light
There is potential barrier in the interfaces such as volt layer/electrode, may reduce the photovoltage of photovoltaic layer generation and act on the electric field of piezoelectric layer
Intensity, so as to weaken the photo-deformable of composite multi-layer membrane structure.Therefore, the interface potential barrier of composite construction in Fig. 1 (d) need to be carried out
Study on regulation.
In summary, electromagnetism interference can be made, without additional electric/magnetic field using the photostrictive effectt of ferroelectric material
The CD-ROM driver of (easily realizing remote control, be conducive to miniaturization, integrated, lightweight), but the photovoltaic of single ferroelectric material
The requirement of effect and inverse piezoelectric effect to test-material yardstick is conflicting.
The content of the invention
The purpose of the present invention is to be directed to above-mentioned the deficiencies in the prior art, is proposed a kind of with big photostrictive effectt device
Preparation method.
The technical proposal of the invention is realized in this way：A kind of preparation method with big photostrictive effectt device, be
Prepare in the following manner：
(1) monocrystalline of the selection with orientation is used as conductive substrates；
(2) pulsed laser deposition is used in piezoelectric membrane of the Grown thickness for 100~1000nm；
(3) conductive film, regrowth insulating barrier are first grown on piezoelectric membrane using pulsed laser deposition；In insulating barrier
Upper growth thickness is 400~600nm ferroelectricity photovoltaic layer and electrode.
The conductive substrates are the SrRuO with orientation3Monocrystalline, the conductive film is SrRuO3Film.
The piezoelectric membrane is lead zirconate titanate strontium film.
The insulating barrier is TbScO3Insulating barrier.
The ferroelectricity photovoltaic layer is BFO films.
Described insulating barrier is prepared using two pace pulse depositional modes：
A. mask barrier electrode I is utilized, growth insulating barrier is contour as electrode I；
B. mask, depositing insulating layer to corresponding thickness are removed.
For single ferroelectric material the requirement to test-material yardstick of photovoltaic effect and inverse piezoelectric effect it is conflicting the problem of,
The present invention proposed using the compound thinking for realizing strong photostrictive effectt of ferroelectricity photovoltaic layer and piezoelectric layer, around how realizing photovoltaic
The problem of high photovoltage of layer is efficiently cooperateed with the strong inverse piezoelectric effect of piezoelectric layer, by the light for studying ferroelectricity composite multilayer membrane
The relation of deformation-crystal grain orientation-electric domain orientation-technological parameter is caused, the photo-deformable amount of composite multilayer membrane is found out with change in orientation
Rule, grasp composite multilayer membrane orientation controlling method simultaneously understand fully its inherent mechanism；By studying the photic of composite multilayer membrane
The relation of deformation quantity-interfacial stress-material system and the relation of photo-deformable amount-deformational stress, grasp stress Effective Regulation and answer
The method for closing the photo-deformable of multilayer film, has understood mechanism of action of the stress to ferroelectricity composite multilayer membrane photostrictive effectt.Separately
Outside, by the relation for the photo-deformable-interface potential barrier-annealing process for studying composite multilayer membrane, interface potential barrier regulation and control can be grasped
The method of composite multilayer membrane photo-deformable, understands fully the photovoltage useful effect of ferroelectricity photovoltaic layer in the mechanism of piezoelectric layer.This Shen
Please by grasping the optical drive various dimensions regulation and control method of Ferroelectric Multilayers and understanding fully its mechanism, produce with big photo-deformable
CD-ROM driver antetype device, laid the foundation to improve the anti-electromagnetic interference capability of steerable system in aircraft.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is the accompanying drawing used required in technology description to be briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 (a), (b), (c) and (d) are composite multilayer membrane structural representation
Fig. 2 is piezoelectricity deformation and photovoltaic layer photovoltage test structure.
Fig. 3 is that two-step method makes insulating barrier process flow diagram.
Fig. 4 is the XRD spectrum of BFO films.
Fig. 5 is BiFeO3The pattern electricdomain figure of film.
Fig. 6 is the SEM image of BFO films.
Fig. 7 is the stroke (photo-induced telescopic) after illumination.
Fig. 8 is open-circuit voltage (I-V curve after illumination).
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not paid
Embodiment, belongs to the scope of protection of the invention.
A kind of preparation method with big photostrictive effectt device, is prepared in the following manner：
(1) monocrystalline of the selection with orientation is used as conductive substrates；
Other methods (can also be used, as long as epitaxial growth, such as molecule can be realized using pulsed laser deposition
Beam epitaxy, MBE) in the piezoelectric membrane that Grown thickness is 100~1000nm；
(3) other methods (can also be used, as long as epitaxial growth can be realized, such as using pulsed laser deposition
Molecular beam epitaxy, MBE) conductive film, regrowth insulating barrier are first grown on piezoelectric membrane；Growth thickness is on the insulating layer
400~600nm ferroelectricity photovoltaic layer and electrode.
To realize the oriented growth of piezoelectric layer and preparing the film of excellent, SrRuO of the selection with orientation3
(SRO) monocrystalline (can also be other monocrystalline, as long as can be conductive, lattice constant be almost with piezoelectric membrane as conductive substrates
Can, such as strontium titanates of niobium doping：STON).The conductive film being preferred to use is SrRUO3Film.
Common piezoelectric film material mainly has zinc oxide (ZnO, d33About tens of pm/V), lead zirconate titanate (PZT, d33max
=419pm/V), lead zirconate titanate strontium (PSZT, d33=400~600pm/V), lead lanthanum zirconate titanate (PLZT, d33≈ 400pm/V), niobium
Magnesium titanate-zirconate (PMN-PT, d33≈ 90pm/V), calcium barium titanate calcium (BCT-BZT, d33≈ 150pm/V), barium titanate (BTO,
d33≈ 100pm/V), bismuth ferrite (BFO, d33≈ 70pm/V) etc..As can be seen here, the piezoelectric property of PSZT ferroelectric thin films is optimal, because
This application intends being used as piezoelectricity layer material from the high PSZT of piezoelectric modulus.I.e. preferred, piezoelectric membrane is that lead zirconate titanate strontium is thin
Film.
Conventional electrode material has metal (Au, Pt etc.) and oxide.In order to ensure that the orientation of piezoelectric layer and photovoltaic layer is given birth to
Long and quality, selection is all perovskite structure, makees piezoelectric layer and photovoltaic layer with piezoelectric layer and the preferable SRO of photovoltaic layer Lattice Matching
Electrode, similarly, select TbScO3(TSO) as insulating layer material.
Photovoltaic material mainly has：PLZT、BFO、BaTiO3Deng.According to the literature：When interelectrode distance is only hundreds of microns
When, BFO film surfaces can obtain up to 50V photovoltage, so, the application intends being used as photovoltaic layer material from BFO.
Described insulating barrier is prepared using two pace pulse depositional modes, as shown in Figure 3：
A. mask barrier electrode I is utilized, growth insulating barrier is contour as electrode I；Electrode I refers to the horizontal part of electrode in Fig. 3
Point.
B. mask, depositing insulating layer to corresponding thickness are removed.
(1) orientation controlling, it is specific as follows：
Pulsed laser deposition technique is used on SRO substrates with the different substrate temperature of series, target-cardinal distance, laser energy,
Growth PSZT films (thickness is 100~1000nm), determines that PSZT is thin by X diffracting spectrums under the process conditions such as frequency and oxygen pressure
Film can be into phase and the condition of epitaxial growth.In this condition and range, by it is accurate, more subtly regulate and control each parameter (such as substrate
Temperature, target-cardinal distance, laser energy, laser frequency, growth of oxygen pressure, annealing oxygen pressure and the technique such as time) to prepare various PSZT thin
Film, is entered using scanning probe microscopy and high resolution transmission electron microscopy to the pattern of PSZT films, piezoelectricity, domain structure
Row observation, research, determine the relation of thin film surface planeness, domain structure, piezoelectricity and growth conditions.By analysis, summarize
The experimental patterns and data of film microstructure (domain structure, crystallite dimension, crystal grain orientation) are obtained, micro- knot of PSZT films is found out
The rule that structure and piezoelectricity change with preparation technology, grasp regulated and controled by adjusting growthing process parameter PSZT film microstructures and
The method of piezoelectric properties.
Similarly, SRO conductive films and TSO are grown using pulsed laser deposition technique respectively on the PSZT films grown
After insulating barrier, BFO films are grown on TSO films (thickness is 400nm~600nm, and width is 5~10mm).
Specifically growth parameter(s) is：
SRO：Electrode is prepared on substrate with pulsed laser deposition, first by the substrate of orientation respectively in acetone, alcohol
It is middle to be cleaned with ultrasonic wave, dry；Chip bench is polished with sand paper, and cleaned up, by the substrate heat conduction dried
Elargol is bonded on chip bench；It is put into after drying in cavity on warm table, starts to be evacuated to 10-4Pa, heating chip bench 650~
750 DEG C, such as 650 DEG C, 700 DEG C or 750 DEG C, heating are slow, are such as heated to 700 DEG C with 90min or so than saying, are incited somebody to action with baffle plate
Substrate is blocked, and is passed through required gas to 40~50Pa；Pre-sputtering is carried out to remove the dirt of target material surface, target is exposed newly
Fresh surface, pre-sputtering process is generally during 2~5min, pre-sputtering, the parameter such as adjustment laser optical path, range, makes plumage brightness
End is tangent with chip bench；Chip bench and target are rotated, and makes laser in X, Y-direction particles；Treat temperature, stable gas pressure it
Afterwards, baffle plate is removed, is deposited, electrode layer is prepared；When prepared by electrode layer during deposition suitable according to film thickness selection
Between, such as, pulse laser frequency is set to 2Hz, and energy is 200mJ, if the SRO thickness prepared is 20nm, deposition
1min。
TSO：Prepared, first use the substrate of orientation in acetone, alcohol respectively on substrate with pulsed laser deposition
Ultrasonic wave is cleaned, and is dried；Chip bench is polished with sand paper, and cleaned up, by the substrate dried heat conduction elargol
It is bonded on chip bench；It is put into after drying in cavity on warm table, starts to be evacuated to 10-4Pa, heats 750~850 DEG C of chip bench,
Such as 750 DEG C, 800 DEG C or 850 DEG C, heating are slow, and 800 DEG C are such as heated to 100min or so than saying, with baffle plate by substrate
Block, and be passed through required gas to 30~70Pa；Pre-sputtering is carried out to remove the dirt of target material surface, exposes target fresh
Surface, pre-sputtering process is generally during 2~5min, pre-sputtering, the parameter such as adjustment laser optical path, range, makes plumage brightness end
It is tangent with chip bench；Chip bench and target are rotated, and makes laser in X, Y-direction particles；After treating temperature, stable gas pressure,
Baffle plate is removed, is deposited, electrode layer is prepared；Suitable sedimentation time is selected according to film thickness when prepared by electrode layer,
Such as, pulse laser frequency is set to 2Hz, and energy is 200mJ, if the SRO thickness prepared is 20nm, deposition
1min。
BFO：By temperature setting to 600~700 °, such as target is converted into BTO, by oxygen by 600 DEG C, 650 DEG C or 700 DEG C
Gas is set to 15Pa；Reach after target temperature, blocked substrate with baffle plate, and gas needed for being passed through to 15Pa (if preparation
Bottom electrode is oxide, then needs to be passed through oxygen, or oxygen and inert gas mixed gas.If bottom electrode is metal,
Such as Pt, Au, etc. need not then be passed through gas)；Set laser energy 240mJ and frequency parameter 5Hz, carry out pre-sputtering with
Remove the dirt of BFO target material surfaces, target is exposed fresh surface, the pre-sputtering time is generally 2~5min, pre-sputtering process
In, the parameter such as laser optical path and range is adjusted, makes plumage brightness end and chip bench tangent.Chip bench and target are rotated, and makes laser
In X, Y-direction particles；Treat after temperature, stable gas pressure, remove baffle plate, deposited, obtain BFO films.Deposit 500nm
The BFO of left and right needs a hour, after deposition terminates, and certain gas is filled with as required (if the bottom electrode prepared is
Oxide, then need to be passed through oxygen, or oxygen and inert gas mixed gas.If bottom electrode is metal, such as Pt,
Au, etc. need not then be passed through gas) and slow cooling.
(2) Ferroelectric Multilayers stress regulation and control is studied
According to substrate, PSZT, electrode, the lattice constant of each layers of BFO, the lattice equations of each interlayer are calculated, its boundary is judged
The type (drawing or compression) of face stress, and utilize stress (in face, outside face) size of each interlayer of membrane stress tester test.
By study the stress types, size, direction of the interfaces such as piezoelectric layer/electrode, photovoltaic layer/electrode, photovoltaic layer/insulating barrier with
The relation of growth conditions, finds out the rule that interface stress changes with preparation technology, grasp by adjust splash-proofing sputtering process parameter come
Regulate and control the method for interfacial stress.By study photovoltaic layer photovoltage and piezoelectric layer deformation produce stress between relation with
And piezoelectric layer inverse piezoelectric effect and photovoltaic layer deformation produce stress between relation, grasp photovoltaic layer, piezoelectric layer deformation
The method of the photo-deformable for the stress regulation and control composite multilayer membrane that the photovoltaic layer of generation, piezoelectric layer deformation are produced, understands fully deformational stress
To the mechanism of action of ferroelectricity composite multilayer membrane photostrictive effectt.As shown in Figure 3.
(3) Ferroelectric Multilayers interface potential barrier study on regulation
Passed through using I-V test systems to electrode/piezoelectric layer/electrode in composite multilayer membrane, electrode/photovoltaic layer/electrode
Leakage current characteristic is measured, and finds out the relation of interface potential barrier and annealing process, find out the micro-structural and ferroelectricity of BFO films with
The rule of preparation technology (mainly sputter temperature and partial pressure of oxygen) change, by analysis, summarizes interface potential barrier with preparation technology's
Changing rule, grasps the method for regulating and controlling multilayer film interface potential barrier by controlling preparation technology.By studying composite multilayer membrane
The relation of photo-deformable and interface potential barrier, grasps the method that interface potential barrier regulates and controls composite multilayer membrane photo-deformable, understands fully ferroelectricity light
The photovoltage useful effect of layer is lied prostrate in the mechanism of piezoelectric layer.
On this basis, grasp the method for the photo-deformable of dimension regulation and control composite multilayer membrane and understand fully its inherent mechanism, make
Make the Ferroelectric Multilayers CD-ROM driver antetype device with big photo-deformable.
(4) irregular insulating barrier technology of preparing
To obtain high-quality ferroelectricity photovoltaic layer, it is desirable to which insulating barrier has even curface.But insulating barrier has irregular
Structure, shown in such as Fig. 1 (d), be difficult to obtain even curface using primary depositing mode.Therefore, the application uses two-step method,
Such as Fig. 3 (a), 3 (b) and the irregular insulating barrier technology of preparing of breakthrough as shown in 3 (c)：The first step, it is raw using mask barrier electrode Ι
Long insulating barrier is until, such as Fig. 3 (b) contour with electrode Ι；Second step, removes mask, the insulating barrier of thickness, such as Fig. 3 needed for deposition
(c) shown in.
It can see from figure (4), prepared BFO films are epitaxial growth.
The domain structure of BFO films is have studied using the piezoelectricity force mode (PFM) of scanning probe microscopy, such as Fig. 5 institutes
Show).Down, black region represents polarised direction upward to the light tone Regional Representative polarised direction of phase (pha1) outside face in figure；
To the left, black region represents polarised direction to the right to the light tone Regional Representative polarised direction of phase (pha2) in face.Can by observation
To find, existing among a crystal grain has two kinds of different polarised directions, formed two electricdomains (in figure shown in bright circle, Fig. 5 (a),
(c)、(e)；Or adjacent several crystal grain are a kind of polarised direction, formed electricdomain (as shown in secretly enclosing, Fig. 5 (a), (c),
(e)。
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
God is with principle, and any modification, equivalent substitution and improvements made etc. should be included in the scope of the protection.
Claims (6)
1. a kind of preparation method with big photostrictive effectt device, it is characterised in that prepare in the following manner：
(1) monocrystalline of the selection with orientation is used as conductive substrates；
(2) in the piezoelectric membrane that Grown thickness is 100~1000nm；
(3) conductive film, regrowth insulating barrier are first grown on piezoelectric membrane；Growth thickness is 400~600nm on the insulating layer
Ferroelectricity photovoltaic layer and electrode.
2. the preparation method according to claim 1 with big photostrictive effectt device, it is characterised in that：The conduction
Substrate is the SrRuO with orientation3Monocrystalline, the conductive film is SrRuO3Film.
3. the preparation method according to claim 1 with big photostrictive effectt device, it is characterised in that：The piezoelectricity
Film is lead zirconate titanate strontium film.
4. the preparation method according to claim 1 with big photostrictive effectt device, it is characterised in that：The insulation
Layer is TbScO3Insulating barrier.
5. the preparation method according to claim 1 with big photostrictive effectt device, it is characterised in that：The ferroelectricity
Photovoltaic layer is BFO films.
6. the preparation method with big photostrictive effectt device according to one of Claims 1 to 5, it is characterised in that institute
The insulating barrier stated is prepared using two pace pulse depositional modes：
A. mask barrier electrode I is utilized, growth insulating barrier is contour as electrode I；
B. mask, depositing insulating layer to corresponding thickness are removed.
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| CN110246958A (en) * | 2019-06-29 | 2019-09-17 | 河南大学 | A method of improving the photoelectric respone of BFO/ZnO heterojunction device |
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| CN110246958B (en) * | 2019-06-29 | 2020-12-18 | 河南大学 | Method for improving photoelectric response of BFO/ZnO heterojunction device |
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